CN106197248A - The detection device of thickness - Google Patents

The detection device of thickness Download PDF

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Publication number
CN106197248A
CN106197248A CN201610579151.6A CN201610579151A CN106197248A CN 106197248 A CN106197248 A CN 106197248A CN 201610579151 A CN201610579151 A CN 201610579151A CN 106197248 A CN106197248 A CN 106197248A
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China
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sensor chip
signal
mentioned
substrate
thickness
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CN201610579151.6A
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CN106197248B (en
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戚务昌
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Weihai Hualing Opto Electronics Co Ltd
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Weihai Hualing Opto Electronics Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/08Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using capacitive means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

This application provides the detection device of a kind of thickness.This detection device includes common unit and detector unit, common unit includes at least one public electrode, detector unit includes that at least two row are along the spaced sensor chip of film moving direction to be measured and signal processing unit, and common unit is the most relative and interval is arranged for each sensor chip, multiple sensor chips of each row are spaced in a second direction, interval between common unit and each sensor chip constitutes the transmission channel of film to be measured, each sensor chip includes multiple detecting electrodes that a line arranges in a second direction, second direction is vertical with the moving direction of film to be measured, first direction is vertical with the first plane, first plane is parallel with second direction;Signal processing unit electrically connects with each sensor chip, and the signal of telecommunication exporting each sensor chip processes and exports.The thickness of thin film can be accurately detected by this detection device.

Description

The detection device of thickness
Technical field
The application relates to Thickness sensitivity field, in particular to the detection device of a kind of thickness.
Background technology
Flake article, such as the on-line continuous thickness measure of paper, bill, plastics film to be measured, textile fabric etc., produce at it The production of product, detect, process, be in increasingly consequence during recovery etc..Currently, the detection technique of film thickness to be measured Including using hall device, reflection-type ultrasound examination, transmission-type ultrasound examination, induction detection, eddy current type inspection The technology such as survey.But test device body corresponding to these technology is long-pending relatively big, relatively costly, is unfavorable for the application of these technology.
In recent years, carried out by interelectrode electrostatic induction the detection technique of film thickness to be measured continuous research and probe it In, the file of such as Publication No. CN210302446Y discloses a kind of capacitive paper thickness sensor, and it is mainly capacitor Volume change change into the change of frequency of oscillation, then by frequency pressure modular converter, the change of frequency is converted into the change of voltage Change.The file of Publication No. CN103363887A also discloses that the detection method of a kind of material thickness, utilizes the pole of capacity plate antenna Plate produces displacement as the Sensitive Apparatus of Thickness sensitivity, the electric capacity movable polar plate that the thickness change of actual measurement object causes, causes putting down The capacity of plate capacitor changes.
Above-mentioned these are reduced to a certain extent by the technology detecting film thickness to be measured of interelectrode electrostatic induction Detection device volume, but the guiding remaining a need for machinery just can make capacitor board produce displacement, with detection equipment small-sized Change development not correspond;And the precision of machinery determines the precision of measurement to a great extent, especially at article at a high speed Transmission state, need multiple spot multichannel accurately to measure and survey object very thin in the case of, the measurement of above-mentioned thickness transducer essence Spend relatively low;It addition, these machinerys can produce the biggest noise when running up, do not meet modern industry environmental protection low-carbon (LC) Growth requirement.
Summary of the invention
The main purpose of the application is to provide the detection device of a kind of thickness, so that solve can not be accurately in prior art The problem of detection film thickness.
To achieve these goals, according to an aspect of the application, it is provided that the detection device of a kind of thickness, this detection Device includes that common unit and detector unit, above-mentioned common unit include that at least one public electrode, above-mentioned detector unit include At least two row are along the spaced sensor chip of film moving direction to be measured and signal processing unit, wherein, each the sensor And above-mentioned common unit is the most relative and interval is arranged for chip, and multiple the sensor chips of each row are along second party To being spaced, the interval between above-mentioned common unit and each the sensor chip constitutes the transmission channel of above-mentioned film to be measured, Each the sensor chip includes multiple detecting electrodes that a line arranges along above-mentioned second direction, and above-mentioned second direction is treated with above-mentioned The moving direction surveying film is vertical, and above-mentioned first direction is vertical with the first plane, and above-mentioned first plane is parallel with above-mentioned second direction, Each the sensor chip is for sensing the signal of telecommunication on above-mentioned public electrode and exporting;Above-mentioned signal processing unit is above-mentioned with each Sensor chip electrically connects, and the signal of telecommunication of each the sensor chip output is processed and exported.
Further, above-mentioned detector unit includes the sensor chip that two row are identical.
Further, each the sensor chip also includes controlling electrode, and above-mentioned control electrode is used for inputting each row of control The clock signal of the sensor chip operation and row enabling signal also export the signal of telecommunication that the sensor chip detection arrives, no The row enabling signal of the sensor chip of colleague has time delay.
Further, above-mentioned signal processing unit includes signal processing circuit and signaling interface, wherein, above-mentioned signal processing Circuit electrically connects with each the sensor chip;Above-mentioned signaling interface electrically connects with above-mentioned signal processing circuit, is used for inputting control The signal of telecommunication after signal processed and output above-mentioned signal processing circuit process.
Further, above-mentioned signal processing circuit includes differential amplifier circuit, analog to digital conversion circuit and control circuit, its In, above-mentioned differential amplifier circuit includes first input end and the second input, above-mentioned first input end and a line the sensor Each sensor chip electrical connection in chip, above-mentioned second input and each sensor core in another row the sensor chip Sheet electrically connects, and above-mentioned differential amplifier circuit is for the signal of telecommunication of the sensor chip output of differential amplification different rows;Above-mentioned Analog to digital conversion circuit one end electrically connects with the outfan of above-mentioned differential amplifier circuit, and above-mentioned analog to digital conversion circuit is for by above-mentioned difference The signal of telecommunication after dividing amplifying circuit to amplify is converted to digital signal;One end of above-mentioned control circuit and above-mentioned differential amplifier circuit Signal controls end, the signal of above-mentioned analog to digital conversion circuit controls end and the electrical connection of each above-mentioned control electrode, and the other end is with above-mentioned Signaling interface electrically connects.
Further, above-mentioned signal processing circuit also includes that correcting circuit, above-mentioned correcting circuit include input, above-mentioned defeated Entering end to electrically connect with the outfan of above-mentioned analog to digital conversion circuit, the signal of above-mentioned correcting circuit controls end and above-mentioned control circuit electricity Connecting, above-mentioned correcting circuit is for being corrected above-mentioned digital signal and exporting.
Further, above-mentioned common unit also includes signal input part, and above-mentioned signal input part is for by the telecommunications of power supply Number input is to above-mentioned public electrode.
Further, above-mentioned common unit also includes that first substrate, the above-mentioned public electrode of above-mentioned first substrate are arranged on State on the first surface of first substrate;Above-mentioned detector unit includes that second substrate, above-mentioned second substrate and above-mentioned common unit exist On above-mentioned first direction, interval is arranged, the first surface of above-mentioned first substrate towards the first surface of above-mentioned second substrate, each on Stating sensor chip to be arranged on the first surface of above-mentioned second substrate, above-mentioned signal processing unit is arranged on above-mentioned second substrate Second surface on, and the first surface of the first surface of above-mentioned first substrate and above-mentioned second substrate is each parallel to above-mentioned first Plane.
Further, the detection device of above-mentioned thickness also includes the first framework, the first protective substrate, the second framework and second Protective substrate, wherein, above-mentioned first framework has the first receiving space, above-mentioned first framework be located on above-mentioned first substrate and Above-mentioned common unit is positioned at above-mentioned first and accommodates space;Above-mentioned first protective substrate is connected with above-mentioned first framework, and is used for Protect each above-mentioned public electrode;Above-mentioned second framework has the second receiving space, and above-mentioned second framework is located at above-mentioned second base On plate and above-mentioned detector unit be positioned at above-mentioned second accommodate space;Above-mentioned second protective substrate is connected with above-mentioned second framework, And be used for protecting each above-mentioned detecting electrode.
Further, above-mentioned common unit includes an above-mentioned public electrode.
The technical scheme of application the application, detection device includes that at least two row are spaced along film moving direction to be measured Sensor chip, and each chip includes the most spaced multiple detecting electrode, and the density of detecting electrode determines The resolution of detection signal, and then determine accuracy of detection, during actually detected, according to demand can adjust sensing The quantity of the detecting electrode on device chip, or adjust the quantity of sensor chip, the detection dress of thickness so can be adjusted flexibly The degree of accuracy put so that this detection device is obtained in that higher accuracy of detection.This detection device is possible not only to accurately detect The thickness of various location, and, this detection device can obtain the testing result of the test point of different rows different lines, by right The signal of telecommunication of the test point of the different lines of different rows does calculus of differences, and then can accurately judge that out that thin film in all directions is No there is thickness abnormity.
Accompanying drawing explanation
The Figure of description of the part constituting the application is used for providing further understanding of the present application, and the application shows Meaning property embodiment and explanation thereof are used for explaining the application, are not intended that the improper restriction to the application.In the accompanying drawings:
Fig. 1 shows the structural representation detecting device that a kind of embodiment according to the application provides;
Fig. 2 shows the partial structurtes schematic diagram of the detector unit that a kind of embodiment provides;
Fig. 3 shows the structural representation of the sensor chip that a kind of embodiment provides;
Fig. 4 shows the top view of the film to be measured in another kind of embodiment;
Fig. 5 shows the top view of the film to be measured in another embodiment;
Fig. 6 shows the electrical schematic diagram of a sensor chip in a line that a kind of embodiment provides;
Fig. 7 shows the electrical schematic diagram of a sensor chip in another row that the detection device of Fig. 6 is corresponding;
Fig. 8 shows the working timing figure of two corresponding for Fig. 6 and Fig. 7 line sensor chips;
Fig. 9 shows the structural representation of the signal processing circuit that a kind of embodiment provides;And
Figure 10 shows the structural representation detecting device that another embodiment provides.
Wherein, above-mentioned accompanying drawing includes the following drawings labelling:
1, common unit;2, detector unit;11, public electrode;10, first substrate;12, the first protective substrate;13, signal Input unit;14, the first framework;20, second substrate;21, sensor chip;22, the second protective substrate;23, signal processing unit; 24, the second framework;100, film to be measured;101, the first foreign body;102, the second foreign body;211, detecting electrode;212, electrode is controlled; 231, signal processing circuit;232, signaling interface;01, differential amplifier circuit;02, analog to digital conversion circuit;03, correcting circuit;04、 Control circuit.
Detailed description of the invention
It it is noted that described further below is all exemplary, it is intended to provide further instruction to the application.Unless it is another Indicating, all technology used herein and scientific terminology have usual with the application person of an ordinary skill in the technical field The identical meanings understood.
It should be noted that term used herein above merely to describe detailed description of the invention, and be not intended to restricted root Illustrative embodiments according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative It is also intended to include plural form, additionally, it should be understood that, when using term " to comprise " in this manual and/or " bag Include " time, it indicates existing characteristics, step, operation, device, assembly and/or combinations thereof.
As background technology is introduced, in prior art, the accuracy of detection of the detection device of thickness is relatively low, in order to solve As above technical problem, present applicant proposes the detection device of a kind of thickness.
In a kind of typical embodiment of the application, it is provided that the detection device of a kind of thickness, as it is shown in figure 1, this detection Device includes common unit 1 and detector unit 2, and above-mentioned common unit 1 includes at least one public electrode 11, wherein, above-mentioned inspection Survey unit 2 to include: at least two row along the spaced sensor chip of film moving direction to be measured 21 and signal processing unit 23, as Shown in Fig. 2, each the sensor chip 21 is all and above-mentioned common unit 1 is the most relative and interval is arranged, each row bag Include multiple the most spaced sensor chip 21, between above-mentioned common unit 1 and each the sensor chip 21 Interval constitute film to be measured transmission channel, as it is shown on figure 3, each the sensor chip 21 includes that a line arranges in a second direction Multiple detecting electrodes 211, above-mentioned second direction is vertical with the moving direction of film to be measured, and above-mentioned first direction and the first plane are hung down Directly, above-mentioned first plane is the most parallel with the moving direction of above-mentioned second direction and film to be measured, and each the sensor chip 21 is used In the signal of telecommunication sensed on above-mentioned public electrode 11 and export;Signal processing unit 23 is electrically connected with each the sensor chip 21 Connect, the signal of telecommunication of each the sensor chip 21 output is processed and exports.
It should be noted that in the case of being not particularly illustrated, " arrangement in a second direction " in the application all represents " edge Second direction linear array ".
In this detection device, public electrode forms similar capacity plate antenna structure with each detecting electrode, and therebetween There is no fixing Filled Dielectrics but form a transmission channel.After electrically charged on public electrode, with regard to energy on each detecting electrode Induce electric charge.The number inducing electric charge on detecting electrode depends in the area of two electrodes being oppositely arranged, two electricity The dielectric constant between the quantity of electric charge and two electrodes entrained on the most separated by a distance, public electrode.Certain in structure In the case of, the electric charge that detecting electrode induces is the most relevant with dielectric constant between two electrodes.When film to be measured is logical through transmission During road, change the dielectric constant of two interelectrode media, make the quantity of the electric charge of sensing on detecting electrode occur the most therewith Change, the thickness of film to be measured is different, and two interelectrode dielectric constants also differ, and then the electric charge sensed on detecting electrode is also Differ, therefore by Detection electrode electrical signal of reaction number can calculate the thickness of film to be measured.
This device include at least two row along the spaced sensor chip of film moving direction to be measured, and each sensor Chip includes a line the most spaced multiple detecting electrode, and the density of detecting electrode determines dividing of detection signal Resolution, and then determine accuracy of detection, during actually detected, the detection on sensor chip can be adjusted according to demand The quantity of electrode, or adjust the quantity of sensor chip, the degree of accuracy of the detection device of thickness so can be adjusted flexibly so that This detection device is obtained in that higher accuracy of detection.This detection device is possible not only to accurately detect the film of various location Thickness, and, by adjusting the startup time of two line sensor chips, or the multiple sensors in two line sensor chips are set The position in a second direction of chip so that the detecting electrode of different rows the most not one_to_one corresponding (the i.e. n-th of a line Detecting electrode projection on another row not n-th detecting electrode with this row (i.e. another row) overlaps), and then make this detection Device can obtain the detection signal of telecommunication of test point of the different rows on thin film to be measured and different lines at synchronization, and then passes through Calculus of differences may determine that whether thin film thickness abnormity occurs in multiple directions, it is possible to multi-direction detects thin film with multi-angle Thickness abnormity, and then can improve film thickness detection precision, especially can detect in prior art and be difficult to detect by The abnormal conditions of Fig. 4 Yu Fig. 5, in Fig. 4, the first foreign body 101 is parallel with the width of film 100 to be measured, the second foreign body in Fig. 5 102 is parallel with the length direction of film 100 to be measured.
In order to put forward the accuracy of detection of height detection device in the way of simpler, such as can detect at length direction or The thickness abnormity of person's width, in a kind of embodiment, as shown in Figures 1 and 2, above-mentioned detector unit includes two line sensor cores Interval between sheet 21, and the quantity of the sensor chip 21 of this two row, adjacent two sensor chips 21 and sensor core Structure within sheet 21 is identical, and sensor chip 21 one_to_one corresponding in two line sensor chips, each sensor core Detecting electrode one_to_one corresponding in sheet, " one_to_one corresponding " value position here is corresponding with number, with sensor chip one a pair For as a example by Ying, the correspondence of position refers to that the n-th sensor chip in a line sensor chip is at another line sensor chip On projection overlap with the n-th sensor chip of another line sensor chip.
In the application one embodiment, the resolution that detecting electrode is corresponding is laterally arranging of 100DPI, i.e. detecting electrode The row cycle is 0.254mm (i.e. the distance at the center of adjacent two detecting electrode of second direction arrangement).Each sensor core Sheet is the integrated circuit using CMOS technology to make, and its length (i.e. size in second direction) is 18.3mm, on a chip Can arrange 72 detecting electrodes, the width of the chip size of second direction vertical direction (i.e. with) is 0.3mm, arrangements of chips Number determines the detection range of whole sensor, and during as generally detected bank note, a line sensor chip uses 10 Or 11 sensor chips may be constructed the detection range of 183mm or 201mm.
In a kind of embodiment of the application, as it is shown on figure 3, the sensor chip also includes controlling electrode 212, above-mentioned control Electrode 212 processed is for inputting the clock signal and row enabling signal controlling the work of each row the sensor chip 21, and exports The signal of telecommunication that the sensor chip detection arrives.The row enabling signal that the sensor chip of different rows is corresponding has time delay, the most often The corresponding row enabling signal of line sensor chip, the row enabling signal of the sensor chip of a line and the sensor core of another row The row enabling signal of sheet has time delay.The detection signal so making synchronization obtain is that the different lines of different rows is (i.e. corresponding The test point of different rows different lines) detecting electrode output, two of different rows different lines detection signals are done calculus of differences, Thus can detect the thickness of thin film more accurately, more fully detect whether its thickness exists abnormal conditions, the most permissible Detect the thickness abnormity situation of the length direction of thin film, the thickness abnormity situation of width or the abnormal feelings in other directions Condition, such as, can detect that the width of thin film as shown in Figure 4 exists the situation of foreign body (such as adhesive tape), it is also possible to detect There is the situation of foreign body (such as adhesive tape) in the length direction of thin film as shown in Figure 5.
In the application one specific embodiment, the electrical schematic diagram of two line sensor chips in detection device is respectively Fig. 6 and Fig. 7, in this detector unit, every line sensor chip includes the most spaced sensor chip 21, respectively passes Control electrode 212, detecting electrode 211 row of interval the most in a second direction on each sensor chip 21 it is provided with on sensor chip 21 Arranging in alignment, the signal controlling sensor chip 21 includes clock signal clk and row enabling signal SI etc., these signals by Controlling electrode 212 to input, SIG is the output signal of sensor chip.Wherein, the row enabling signal of two line sensor chips is respectively For SI1 and SI2, the row enabling signal just because of two line sensor chips is different so that can obtain two row at synchronization The detection signal of the test point of the different lines of sensor chip, the most respectively SIG1 and SIG2, and then can be to the thickness of thin film Accurately detect, foreign body present on thin film as shown in Figure 5 or Figure 6 can be detected.
Sensor chip in above-mentioned detection device also includes: multiple shift registers and multiple on-off circuit, wherein, opens Close, shift register all electrically connects with detecting electrode one_to_one corresponding, opening and shutting off of on-off control detecting electrode.Shift LD When device receives the enabling signal of correspondence, control to switch on or turn off, and then control being switched on or off of detecting electrode.
The working timing figure of the above-mentioned each sensor chip in detection device is Fig. 8.Sensor chip is in clock signal Under the effect of CLK, when row enabling signal SI1 of a line sensor chip arrives, the displacement of this line sensor chip internal is posted Deposit circuit and on-off circuit in turn switches on each detecting electrode, make the electrical signal of reaction on detecting electrode pass sequentially through control electricity The most outwards export SIG1;When row enabling signal SI2 of another line sensor chip arrives, the shifting of this line sensor chip internal Position register circuit and on-off circuit in turn switch on each detecting electrode, make the electrical signal of reaction on detecting electrode pass sequentially through control Electrode processed outwards exports SIG2, and row enabling signal SI1 of two line sensor chips and SI2 have time delay.
In the another kind of embodiment of the application, as it is shown in figure 1, above-mentioned signal processing unit 23 includes: signal processing circuit 231 with signaling interface 232, wherein, signal processing circuit 231 electrically connects with each the sensor chip 21;Signaling interface 232 with Above-mentioned signal processing circuit 231 electrically connects, after being used for inputting above-mentioned control signal and exporting the process of above-mentioned signal processing circuit 231 The signal of telecommunication.
In order to put forward the accuracy of detection of height detection device further, it is possible to judge the abnormal feelings of film thickness more accurately Condition, such as the thickness abnormity situation on length direction, width or on other directions, as it is shown in figure 9, the application is preferred Above-mentioned signal processing circuit 231 includes: differential amplifier circuit 01, analog to digital conversion circuit 02 and control circuit 04, wherein, and this difference Amplifying circuit 01 includes first input end and the second input, each with a line the sensor chip of above-mentioned first input end Sensor chip electrically connects, and above-mentioned second input electrically connects with each sensor chip in another row the sensor chip, Above-mentioned differential amplifier circuit is for the signal of telecommunication of the detecting electrode output of differential amplification different rows different lines, and then puts according to difference Big result can accurately judge that out thin film abnormal conditions in different directions further, the most in the longitudinal direction different Often, the thickness abnormity on width or the exception on other directions;Analog to digital conversion circuit 02 one end and above-mentioned differential amplification The outfan electrical connection of circuit 01, the above-mentioned analog to digital conversion circuit 02 signal of telecommunication after above-mentioned differential amplifier circuit 01 is amplified Be converted to digital signal;One end of control circuit 04 controls end, above-mentioned analog digital conversion with the signal of above-mentioned differential amplifier circuit 01 The signal of circuit 02 controls end and the electrical connection of above-mentioned control electrode, and the other end of control circuit electrically connects with above-mentioned signaling interface (not shown in Fig. 9), the control signal received is converted to the control signal of correspondence and processes each electricity in circuit by this control circuit The signal (clock signal and row enabling signal) of the signal of road work and the work of control sensor chip, and it is input to correspondence Signal end, the work to each sensor chip in detector unit and each circuit in signal processing circuit is controlled System.
As it is shown in figure 9, above-mentioned signal processing circuit also includes correcting circuit in the another kind of preferred embodiment of the application 03, this correcting circuit 03 includes that input, above-mentioned input electrically connect with the outfan of above-mentioned analog to digital conversion circuit 02, above-mentioned benefit The signal of positive circuit 03 controls end and electrically connects with above-mentioned control circuit 04, and above-mentioned correcting circuit 03 is for entering above-mentioned digital signal Row correction also exports.
The signal generally ratio detected by detecting electrode is relatively low, needs to be amplified processing to it, but after signal amplifies Its entrained noise signal is exaggerated the most therewith, and therefore the mainly elimination of this correcting circuit is brought by sensor chip itself Error, it is amplified the useful signal after process.Generally comprising a depositor (not drawing in figure) in correcting circuit, this is deposited Device saves the noise signal collected under static state as augmenting factor, real-time letter of the prior art can be used Number deduct the correction method of noise signal, the most just repeat no more.
Signal processing circuit 231 in the application is not required to arrange the output letter of single register pair correcting circuit Number carry out storing and time delay, it is not required that arrange the time delay differential amplifier circuit that electrically connects with depositor in depositor not Detection signal (the detection signal that i.e. different test points are corresponding) in the same time carries out differential amplification, it is only necessary to control the biography of different rows The line scan signals of sensor chip so that it has time delay, it is possible to detect that the thickness of thin film is deposited the most in a certain direction In exception, this kind of structure of the detecting device is simple, and can simply efficiently accurately thickness and abnormal conditions thereof to thin film enter Row detection.
On public electrode, voltage is applied, as it is shown in figure 1, the preferred above-mentioned common unit of the application also wraps in order to convenient Including: signal input part, this signal input part is for inputting the signal of telecommunication of power supply to above-mentioned public electrode.
In the another kind of embodiment of the application, as it is shown in figure 1, above-mentioned common unit 1 also includes: first substrate 10, above-mentioned Public electrode 11 is arranged on the first surface of above-mentioned first substrate 10, and detector unit 2 includes second substrate 20, second substrate with Above-mentioned common unit 1 is spaced setting on above-mentioned first direction, and the first surface of above-mentioned first substrate 10 is towards above-mentioned second base The first surface of plate 20, and as in figure 2 it is shown, each the sensor chip 21 is arranged on the first surface of above-mentioned second substrate 20 On, above-mentioned signal processing unit 23 is arranged on the second surface of above-mentioned second substrate 20, and the first of above-mentioned first substrate 10 The second surface of surface, the first surface of above-mentioned second substrate 20 and above-mentioned second substrate 20 is each parallel to above-mentioned first plane. As it is shown in figure 1, signal input part 13 is arranged on the second surface relative with first surface of first substrate 10.
First substrate is the carrier of other structures of common unit, and second substrate is the carrier of other structure of detector unit, and And first substrate is staggered relatively to facilitate composition transmission channel with second substrate.For the ease of film to be measured between two pole plates smoothly Transmission, according to the difference of the size of film product to be measured, the distance between two pole plates is between 1mm to 10mm.But the distance of the two Being not limited to this scope, the distance of the two can be arranged on suitable scope by those skilled in the art according to specific circumstances In.
It can be glass substrate, PCB substrate, metal substrate sheet or pottery that first substrate and second substrate are separately selected from Porcelain plate substrate.The material of two substrates can identical can also differ.
In a kind of embodiment of the application, first substrate is PCB substrate, designs required figure in PCB substrate, Public electrode is set, and by power supply to public electrode input electrical signal so that it is carry electric charge.And in this embodiment, the Two substrates are also PCB substrate.
In order to protect common unit and detector unit, as shown in Figure 10, the detection device of the preferred above-mentioned thickness of the application is also Including: the first framework the 14, first protective substrate the 12, second framework 24 and the second protective substrate 22, wherein, the first framework 14 has First accommodates space, and above-mentioned first framework 14 is located on above-mentioned first substrate 10 and above-mentioned common unit 1 is positioned at above-mentioned first Accommodate in space;First protective substrate 12 is connected with above-mentioned first framework 14, and is used for protecting each public electrode;Second framework 24 Having the second receiving space, above-mentioned second framework 24 is located on above-mentioned second substrate 20, and above-mentioned detector unit 2 is positioned at above-mentioned Second accommodates in space;Second protective substrate 22 is connected with above-mentioned second framework 24, and is used for protecting each detecting electrode.
The material forming above-mentioned first framework and the second framework can be plastic frame, is made by Shooting Technique, is formed The material of the first protective substrate and the second protective substrate can be glass plate, it is also possible to being pottery base stage, the material of the two is permissible It is identical, it is also possible to be different.
Common unit in the application can include a public electrode, it is also possible to includes multiple public electrode, this area Technical staff can arrange the quantity of public electrode according to practical situation, when common unit only one of which public electrode, public Electrode is the plane electrode that an area is bigger, and its effect is and is arranged oppositely detecting electrode and can form electrostatic induction electrode pair Youngster, its area at least to cover the whole detecting electrodes arranged to detector unit.
In a kind of embodiment of the application, as shown in Fig. 1 Yu Figure 10, the common unit in the application only includes public affairs Common electrode 11.
As can be seen from the above description, the application the above embodiments achieve following technique effect:
Detection device in the application include at least two row along the spaced sensor chip of film moving direction to be measured, And each chip includes the most spaced multiple detecting electrode, the density of detecting electrode determines detection signal Resolution, and then determine accuracy of detection, during actually detected, the inspection on sensor chip can be adjusted according to demand Survey the quantity of electrode, or the quantity of adjustment sensor chip, the degree of accuracy of the detection device of thickness so can be adjusted flexibly, make Obtain this detection device and be obtained in that higher accuracy of detection.This detection device is possible not only to accurately detect the film of various location Thickness, and, this detection device can obtain the testing result of the test point of different rows different lines, by the different lines to different rows The signal of telecommunication of test point do calculus of differences, and then can accurately judge that out in all directions, whether thin film occurs that thickness is different Often.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for the skill of this area For art personnel, the application can have various modifications and variations.All within spirit herein and principle, that is made any repaiies Change, equivalent, improvement etc., within should be included in the protection domain of the application.

Claims (10)

1. a detection device for thickness, including common unit and detector unit, described common unit includes that at least one is public Electrode, it is characterised in that described detector unit includes:
At least two row are along the spaced sensor chip of film moving direction to be measured, each described sensor chip and described public list Unit is relative in a first direction and interval is arranged, and the multiple described sensor chip of each row is spaced in a second direction, described Interval between common unit and each described sensor chip constitutes the transmission channel of described film to be measured, each described sensor chip The multiple detecting electrodes arranged along described second direction including a line, described second direction is vertical with the moving direction of described film to be measured Directly, described first direction is vertical with the first plane, and described first plane is parallel with described second direction, each described sensor chip For the signal of telecommunication sensed on described public electrode and export;And
Signal processing unit, electrically connects with each described sensor chip, carries out the signal of telecommunication of each described sensor chip output Process and export.
The detection device of thickness the most according to claim 1, it is characterised in that described detector unit includes that two row are identical Sensor chip.
The detection device of thickness the most according to claim 2, it is characterised in that each described sensor chip also includes controlling Electrode, described control electrode controls the clock signal of sensor chip work described in each row and row enabling signal defeated for inputting Going out the signal of telecommunication that described sensor chip detects, the row enabling signal of the described sensor chip of different rows has time delay.
The detection device of thickness the most according to claim 3, it is characterised in that described signal processing unit includes:
Signal processing circuit, electrically connects with each described sensor chip;And
Signaling interface, electrically connects with described signal processing circuit, is used for inputting control signal and exporting described signal processing circuit The signal of telecommunication after process.
The detection device of thickness the most according to claim 4, it is characterised in that described signal processing circuit includes:
Differential amplifier circuit, including first input end and the second input, described first input end and sensor core described in a line Each sensor chip electrical connection in sheet, described second input and each sensor chip in sensor chip described in another row Electrical connection, described differential amplifier circuit is for the signal of telecommunication of the described sensor chip output of differential amplification different rows;
Analog to digital conversion circuit, one end electrically connects with the outfan of described differential amplifier circuit, and analog-digital conversion circuit as described is used for will The signal of telecommunication after described differential amplifier circuit amplifies is converted to digital signal;And
Control circuit, one end and the signal of described differential amplifier circuit control end, the signal of analog-digital conversion circuit as described controls end And the electrical connection of each described control electrode, the other end electrically connects with described signaling interface.
The detection device of thickness the most according to claim 5, it is characterised in that described signal processing circuit also includes:
Correcting circuit, including input, described input electrically connects with the outfan of analog-digital conversion circuit as described, described correction electricity The signal on road controls end and electrically connects with described control circuit, and described correcting circuit is for being corrected and defeated described digital signal Go out.
The detection device of thickness the most according to claim 1, it is characterised in that described common unit also includes:
Signal input part, for inputting the signal of telecommunication of power supply to described public electrode.
The detection device of thickness the most according to claim 7, it is characterised in that
Described common unit also includes:
First substrate, described public electrode is arranged on the first surface of described first substrate;
Described detector unit includes:
Second substrate, and described common unit is spaced setting in said first direction, the first surface court of described first substrate To the first surface of described second substrate, each described sensor chip is arranged on the first surface of described second substrate, described Signal processing unit is arranged on the second surface of described second substrate, and the first surface of described first substrate and described second The first surface of substrate is each parallel to described first plane.
The detection device of thickness the most according to claim 8, it is characterised in that the detection device of described thickness also includes:
First framework, has the first receiving space, and described first framework is located on described first substrate and described common unit It is positioned at described first and accommodates space;
First protective substrate, is connected with described first framework, and is used for protecting each described public electrode;
Second framework, has the second receiving space, and described second framework is located on described second substrate and described detector unit It is positioned at described second and accommodates space;And
Second protective substrate, is connected with described second framework, and is used for protecting each described detecting electrode.
The detection device of thickness the most according to any one of claim 1 to 9, it is characterised in that described common unit bag Include a described public electrode.
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