CN106197248B - The detection device of film thickness - Google Patents
The detection device of film thickness Download PDFInfo
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- CN106197248B CN106197248B CN201610579151.6A CN201610579151A CN106197248B CN 106197248 B CN106197248 B CN 106197248B CN 201610579151 A CN201610579151 A CN 201610579151A CN 106197248 B CN106197248 B CN 106197248B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/08—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using capacitive means
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Abstract
This application provides a kind of detection devices of film thickness.The detection device includes common unit and detection unit, common unit includes at least one public electrode, detection unit includes at least two rows along the spaced sensor chip of film moving direction to be measured and signal processing unit, each sensor chip is opposite in a first direction with common unit and is arranged at intervals, multiple sensor chips of each row are alternatively arranged in a second direction, interval between common unit and each sensor chip forms the transmission channel of film to be measured, each sensor chip includes multiple detecting electrodes that a line arranges in a second direction, second direction is vertical with the moving direction of film to be measured, first direction is vertical with the first plane, first plane is parallel with second direction；Signal processing unit is electrically connected with each sensor chip, and the electric signal of each sensor chip output is handled and exported.The detection device can accurately detect the thickness of film.
Description
Technical field
This application involves Thickness sensitivity field, in particular to a kind of detection device of film thickness.
Background technology
Laminar article, such as the on-line continuous thickness measure of paper, bill, plastics film to be measured, textile fabric, in its production
In increasingly consequence during production, detection, processing, recycling of product etc..Currently, the detection technique of film thickness to be measured
Include the use of hall device, reflection-type ultrasound examination, transmission-type ultrasound examination, induction detection, eddy current type inspection
The technologies such as survey.But the corresponding detection device volume of these technologies is larger, and cost is higher, is unfavorable for the application of these technologies.
In recent years, carried out by interelectrode electrostatic induction the detection technique of film thickness to be measured continuous research and probe it
In, such as the file of Publication No. CN210302446Y discloses a kind of capacitive paper thickness sensor, mainly by capacitor
Volume change change into the variation of frequency of oscillation, then the variation of frequency is converted into the change of voltage by frequency pressure modular converter
Change.The file of Publication No. CN103363887A also discloses that a kind of detection method of material thickness, utilizes the pole of capacity plate antenna
Sensitive Apparatus of the plate as Thickness sensitivity, capacitance movable polar plate caused by surveying the thickness change of object generate displacement, cause to put down
The capacity of plate capacitor changes.
Above-mentioned these are reduced to a certain extent by the technology of the detection film thickness to be measured of interelectrode electrostatic induction
The volume of detection device, but the guiding for stilling need mechanical device could cause capacitor board to generate displacement, it is small-sized with detection device
Change development not to be consistent；And the precision of mechanical device largely determines the precision of measurement, especially in article at a high speed
Transmission state, in the case of needing multiple spot multichannel accurately measurement and actual measurement object being very thin, the measurement of above-mentioned thickness transducer essence
It spends relatively low；In addition, these mechanical devices can generate very big noise when running at high speed, modern industry environmental protection low-carbon is not met
Growth requirement.
The content of the invention
The main purpose of the application is to provide a kind of detection device of film thickness, with solve in the prior art cannot be accurately
The problem of detecting film thickness.
To achieve these goals, according to the one side of the application, a kind of detection device of film thickness, the detection are provided
Device includes common unit and detection unit, and above-mentioned common unit includes at least one public electrode, and above-mentioned detection unit includes
At least two rows along the spaced sensor chip of film moving direction to be measured and signal processing unit, wherein, each the sensor
Chip and above-mentioned common unit are opposite in a first direction and are arranged at intervals, and multiple the sensor chips of each row are along second party
To being alternatively arranged, the interval between above-mentioned common unit and each the sensor chip forms the transmission channel of above-mentioned film to be measured,
Each the sensor chip includes multiple detecting electrodes that a line is arranged along above-mentioned second direction, and above-mentioned second direction is treated with above-mentioned
The moving direction of survey film is vertical, and above-mentioned first direction is vertical with the first plane, and above-mentioned first plane is parallel with above-mentioned second direction,
Each the sensor chip is used to sense electric signal and the output on above-mentioned public electrode；Above-mentioned signal processing unit with it is each above-mentioned
Sensor chip is electrically connected, and the electric signal of each the sensor chip output is handled and exported.
Further, above-mentioned detection unit includes the identical sensor chip of two rows.
Further, each the sensor chip further includes coordination electrode, and above-mentioned coordination electrode is used for each row of input control
The clock signal and row enabling signal of the sensor chip operation simultaneously export the electric signal that the sensor chip detects, no
The row enabling signal of the sensor chip of colleague has delay.
Further, above-mentioned signal processing unit includes signal processing circuit and signaling interface, wherein, above-mentioned signal processing
Circuit is electrically connected with each the sensor chip；Above-mentioned signaling interface is electrically connected with above-mentioned signal processing circuit, is controlled for inputting
Signal processed treated with exporting above-mentioned signal processing circuit electric signal.
Further, above-mentioned signal processing circuit includes differential amplifier circuit, analog to digital conversion circuit and control circuit,
In, above-mentioned differential amplifier circuit includes first input end and the second input terminal, above-mentioned first input end and a line the sensor
Each sensor chip electrical connection in chip, above-mentioned second input terminal and each sensor core in another row the sensor chip
Piece is electrically connected, the electric signal for the sensor chip output that above-mentioned differential amplifier circuit is not gone together for differential amplification；It is above-mentioned
Analog to digital conversion circuit one end is electrically connected with the output terminal of above-mentioned differential amplifier circuit, and above-mentioned analog to digital conversion circuit is used for above-mentioned difference
The amplified electric signal of amplifying circuit is divided to be converted to digital signal；One end of above-mentioned control circuit and above-mentioned differential amplifier circuit
Signal control terminal, the signal control terminal of above-mentioned analog to digital conversion circuit and the electrical connection of each above-mentioned coordination electrode, the other end with it is above-mentioned
Signaling interface is electrically connected.
Further, above-mentioned signal processing circuit further includes correcting circuit, and above-mentioned correcting circuit includes input terminal, above-mentioned defeated
Enter end to be electrically connected with the output terminal of above-mentioned analog to digital conversion circuit, signal control terminal and the above-mentioned control circuit electricity of above-mentioned correcting circuit
Connection, above-mentioned correcting circuit are used to that above-mentioned digital signal to be corrected and exported.
Further, above-mentioned common unit further includes signal input part, and above-mentioned signal input part is used for the telecommunications of power supply
Number input is to above-mentioned public electrode.
Further, above-mentioned common unit further includes first substrate, and the above-mentioned above-mentioned public electrode of first substrate is arranged on
It states on the first surface of first substrate；Above-mentioned detection unit includes second substrate, and above-mentioned second substrate exists with above-mentioned common unit
Be arranged at intervals on above-mentioned first direction, the first surface of above-mentioned first substrate towards above-mentioned second substrate first surface, it is each on
It states sensor chip to be arranged on the first surface of above-mentioned second substrate, above-mentioned signal processing unit is arranged on above-mentioned second substrate
Second surface on, and the first surface of the first surface of above-mentioned first substrate and above-mentioned second substrate is each parallel to above-mentioned first
Plane.
Further, the detection device of above-mentioned film thickness further includes the first framework, the first protective substrate, second framework and second
Protective substrate, wherein, above-mentioned first framework have first receiving space, above-mentioned first framework be located on above-mentioned first substrate and
Above-mentioned common unit is located in above-mentioned first receiving space；Above-mentioned first protective substrate is connected with above-mentioned first framework, and is used for
Protect each above-mentioned public electrode；Above-mentioned second framework has the second accommodation space, and above-mentioned second framework is located at above-mentioned second base
On plate and above-mentioned detection unit is located in above-mentioned second accommodation space；Above-mentioned second protective substrate is connected with above-mentioned second framework,
And for protecting each above-mentioned detecting electrode.
Further, above-mentioned common unit includes an above-mentioned public electrode.
Using the technical solution of the application, it is spaced along film moving direction to be measured that detection device includes at least two rows
Sensor chip, and each chip includes multiple detecting electrodes spaced in a second direction, and the density of detecting electrode determines
The resolution ratio of detection signal, and then determine accuracy of detection, during atual detection, sensing can be adjusted according to demand
The detection dress of film thickness can be so adjusted flexibly in the quantity of detecting electrode on device chip or the quantity for adjusting sensor chip
The accuracy put so that the detection device can obtain higher accuracy of detection.The detection device can not only accurately detect
Film thickness at different position, moreover, the detection device can obtain the testing result of the test point for different lines of not going together, by right
The electric signal of the test point for the different lines do not gone together does calculus of differences, and then can accurately judge that out that film is in all directions
It is no thickness abnormity occur.
Description of the drawings
The accompanying drawings which form a part of this application are used for providing further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation do not form the improper restriction to the application for explaining the application.In the accompanying drawings：
Fig. 1 shows the structure diagram of the detection device provided according to a kind of embodiment of the application；
Fig. 2 shows a kind of partial structural diagram for the detection unit that embodiment provides；
Fig. 3 shows a kind of structure diagram for the sensor chip that embodiment provides；
Fig. 4 shows the top view of the film to be measured in another embodiment；
Fig. 5 shows the top view of the film to be measured in another embodiment；
Fig. 6 shows the electrical schematic diagram of a sensor chip in a line that a kind of embodiment provides；
Fig. 7 shows the electrical schematic diagram of a sensor chip in the corresponding another row of the detection device of Fig. 6；
Fig. 8 shows the working timing figure of the corresponding two line sensors chips of Fig. 6 and Fig. 7；
Fig. 9 shows a kind of structure diagram for the signal processing circuit that embodiment provides；And
Figure 10 shows the structure diagram for the detection device that another embodiment provides.
Wherein, above-mentioned attached drawing is marked including the following drawings：
1st, common unit；2nd, detection unit；11st, public electrode；10th, first substrate；12nd, the first protective substrate；13rd, signal
Input unit；14th, the first framework；20th, second substrate；21st, sensor chip；22nd, the second protective substrate；23rd, signal processing unit；
24th, second framework；100th, film to be measured；101st, the first foreign matter；102nd, the second foreign matter；211st, detecting electrode；212nd, coordination electrode；
231st, signal processing circuit；232nd, signaling interface；01st, differential amplifier circuit；02nd, analog to digital conversion circuit；03rd, correcting circuit；04、
Control circuit.
Specific embodiment
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.It is unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
It is also intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " bag
Include " when, indicate existing characteristics, step, operation, device, component and/or combination thereof.
As background technology is introduced, the accuracy of detection of the detection device of film thickness is relatively low in the prior art, in order to solve
As above the technical issues of, present applicant proposes a kind of detection devices of film thickness.
In a kind of typical embodiment of the application, a kind of detection device of film thickness is provided, as shown in Figure 1, the detection
Device includes common unit 1 and detection unit 2, and above-mentioned common unit 1 includes at least one public electrode 11, wherein, above-mentioned inspection
Surveying unit 2 includes：At least two rows are along the spaced sensor chip 21 of film moving direction to be measured and signal processing unit 23, such as
Shown in Fig. 2, each the sensor chip 21 is opposite in a first direction with above-mentioned common unit 1 and is arranged at intervals, each row bag
Multiple sensor chips 21 spaced in a second direction are included, between above-mentioned common unit 1 and each the sensor chip 21
Interval form the transmission channel of film to be measured, as shown in figure 3, each the sensor chip 21 arranges in a second direction including a line
Multiple detecting electrodes 211, above-mentioned second direction is vertical with the moving direction of film to be measured, and above-mentioned first direction hangs down with the first plane
Directly, above-mentioned first plane is parallel with the moving direction of above-mentioned second direction and film to be measured, and each the sensor chip 21 is used
In the electric signal on the above-mentioned public electrode 11 of sensing and output；Signal processing unit 23 is electrically connected with each the sensor chip 21
It connects, the electric signal of each the sensor chip 21 output is handled and exported.
It should be noted that in the case of being not particularly illustrated, " arranging in a second direction " in the application represents " edge
Second direction is arranged in a straight line ".
In the detection device, public electrode forms similar capacity plate antenna structure with each detecting electrode, and therebetween
There is no fixed Filled Dielectrics but form a transmission channel.After electrically charged on public electrode, with regard to energy on each detecting electrode
Induce charge.Induced on detecting electrode charge number depend on area, two electricity in two electrodes being oppositely arranged
Dielectric constant between the quantity of electric charge extremely separated by a distance, entrained on public electrode and two electrodes.Certain in structure
In the case of, only the dielectric constant between two electrodes is related for the charge induced on detecting electrode.When film to be measured is logical by transmission
During road, the dielectric constant of two interelectrode media is changed, the quantity of the charge sensed on detecting electrode is made also to occur therewith
Variation, the thickness of film to be measured is different, and two interelectrode dielectric constants also differ, and then the charge sensed on detecting electrode
It differs, therefore the thickness of film to be measured can be calculated by the number of electrical signal of reaction on Detection electrode.
The device includes at least two rows along the spaced sensor chip of film moving direction to be measured, and each sensor
Chip includes the multiple detecting electrodes spaced in a second direction of a line, and the density of detecting electrode determines point of detection signal
Resolution, and then determine accuracy of detection, during atual detection, it can according to demand, adjust the detection of sensor core on piece
The accuracy of the detection device of film thickness can be so adjusted flexibly in the quantity of electrode or the quantity for adjusting sensor chip so that
The detection device can obtain higher accuracy of detection.The detection device can not only accurately detect the film at different position
Thickness, moreover, by adjusting multiple sensors in the two line sensor chips of startup time or setting of two line sensor chips
The position in a second direction of chip so that the detecting electrode do not gone together does not correspond (the i.e. n-th of a line in position
Projection of the detecting electrode on another row is not overlapped with the n-th detecting electrode of the row (i.e. another row)) so that the detection
Device can obtain not going together on film to be measured and the detection electric signal of the test point of different lines in synchronization, and then pass through
Calculus of differences may determine that whether film thickness abnormity occurs in multiple directions, multi-direction can detect film with multi-angle
Thickness abnormity, and then can improve film thickness detection precision, can especially detect to be difficult to detect by the prior art
Fig. 4 and Fig. 5 abnormal conditions, the first foreign matter 101 is parallel with the width of film 100 to be measured in Fig. 4, the second foreign matter in Fig. 5
102 is parallel with the length direction of film 100 to be measured.
In order to improve the accuracy of detection of detection device in a manner of simpler, for example, can detect in length direction or
The thickness abnormity of person's width, in a kind of embodiment, as shown in Figures 1 and 2, above-mentioned detection unit includes two line sensor cores
Piece 21, and the interval between the quantity of the sensor chip 21 of this two row, two neighboring sensor chip 21 and sensor core
Structure inside piece 21 is identical, and the sensor chip 21 in two line sensor chips corresponds, each sensor core
Detecting electrode in piece corresponds, and " one-to-one corresponding " value position here is corresponding with number, a pair of with sensor chip one
Should exemplified by for, the correspondence of position refers to n-th sensor chip in a line sensor chip in another line sensor chip
On projection overlapped with the n-th sensor chip of another line sensor chip.
In a kind of embodiment of the application, the corresponding resolution ratio of detecting electrode be 100DPI, i.e., detecting electrode in horizontal row
The row cycle is 0.254mm (i.e. the distance at the center of adjacent two detecting electrode of second direction arrangement).Each sensor core
Piece is the integrated circuit made of CMOS technology, and length (size i.e. in second direction) is 18.3mm, on a chip
72 detecting electrodes can be arranged, the width of chip (i.e. with the size of second direction vertical direction) is 0.3mm, arrangements of chips
Number determines the detection range of entire sensor, and when being such as usually detected to bank note, a line sensor chip uses 10
Or 11 sensor chips may be constructed the detection range of 183mm or 201mm.
In a kind of embodiment of the application, as shown in figure 3, the sensor chip further includes coordination electrode 212, above-mentioned control
Electrode 212 processed is used for clock signal and the row enabling signal that each row the sensor chip 21 of input control works, and exports
The electric signal that the sensor chip detects.The corresponding row enabling signal of sensor chip do not gone together has delay, i.e., every
Line sensor chip corresponds to a row enabling signal, the row enabling signal of the sensor chip of a line and the sensor core of another row
The row enabling signal of piece has delay.So so that the detection signal that synchronization obtains is that the different lines do not gone together are (i.e. corresponding
The test point for different lines of not going together) detecting electrode output, calculus of differences is done to two of different lines of not going together detection signals,
The thickness of film thus can be more accurately detected, more fully detects its thickness with the presence or absence of abnormal conditions, such as can be with
Detect the abnormal feelings of the thickness abnormity situation of the length direction of film, the thickness abnormity situation of width or other directions
Condition, such as can detect that the width of film as shown in Figure 4 has foreign matter (such as adhesive tape), it can also detect
There is foreign matter (such as adhesive tape) in the length direction of film as shown in Figure 5.
In a kind of specific embodiment of the application, the electrical schematic diagram of two line sensor chips in detection device is respectively
Fig. 6 and Fig. 7 includes spaced sensor chip 21 in a second direction in the detection unit per line sensor chip, each to pass
It is provided with coordination electrode 212 on sensor chip 21, the also interval row in a second direction of the detecting electrode 211 on each sensor chip 21
Arrange it is in alignment, control sensor chip 21 signal include clock signal clk and row enabling signal SI etc., these signals by
Coordination electrode 212 inputs, and SIG is the output signal of sensor chip.Wherein, the row enabling signal difference of two line sensor chips
For SI1 and SI2, the row enabling signal just because of two line sensor chips is different so that can obtain two rows in synchronization
The detection signal of the test point of the different lines of sensor chip, i.e., respectively SIG1 and SIG2, and then can be to the thickness of film
It is accurately detected, foreign matter present on film as shown in Figure 5 or Figure 6 can be detected.
Sensor chip in above-mentioned detection device further includes：Multiple shift registers and multiple switch circuit, wherein, it opens
Pass, shift register are electrically connected with detecting electrode one-to-one corresponding, and switch control detecting electrode is opened and shut off.Shift LD
When device receives corresponding enabling signal, control is switched on or turned off, and then controls being switched on or off for detecting electrode.
The working timing figure of each sensor chip in above-mentioned detection device is Fig. 8.Sensor chip is in clock signal
Under the action of CLK, when the row enabling signal SI1 of a line sensor chip arrives, the displacement of the line sensor chip internal is posted
It deposits circuit and on-off circuit in turn switches on each detecting electrode, the electrical signal of reaction on detecting electrode is made to pass sequentially through control electricity
Extremely outwards output SIG1；When the row enabling signal SI2 of another line sensor chip arrives, the shifting of the line sensor chip internal
Position register circuit and on-off circuit in turn switch on each detecting electrode, and the electrical signal of reaction on detecting electrode is made to pass sequentially through control
Electrode processed outwards exports SIG2, and the row enabling signal SI1 and SI2 of two line sensor chips have delay.
In another embodiment of the application, as shown in Figure 1, above-mentioned signal processing unit 23 includes：Signal processing circuit
231 with signaling interface 232, wherein, signal processing circuit 231 is electrically connected with each the sensor chip 21；Signaling interface 232 with
Above-mentioned signal processing circuit 231 is electrically connected, after inputting above-mentioned control signal and exporting the above-mentioned processing of signal processing circuit 231
Electric signal.
In order to further improve the accuracy of detection of detection device, the abnormal feelings of film thickness can be more accurately judged
Condition, such as the thickness abnormity situation on length direction, width or on other directions, as shown in figure 9, the application is preferred
Above-mentioned signal processing circuit 231 includes：Differential amplifier circuit 01, analog to digital conversion circuit 02 and control circuit 04, wherein, the difference
Amplifying circuit 01 include first input end and the second input terminal, above-mentioned first input end with it is each in a line the sensor chip
Sensor chip is electrically connected, and above-mentioned second input terminal is electrically connected with each sensor chip in another row the sensor chip,
Above-mentioned differential amplifier circuit for differential amplification do not go together different lines detecting electrode output electric signal, and then put according to difference
Big result can further accurately judge that out the abnormal conditions of film in different directions, such as in the longitudinal direction different
Often, the thickness abnormity on width or the exception on other directions；02 one end of analog to digital conversion circuit and above-mentioned differential amplification
The output terminal electrical connection of circuit 01, above-mentioned analog to digital conversion circuit 02 are used for above-mentioned 01 amplified electric signal of differential amplifier circuit
Be converted to digital signal；One end of control circuit 04 and signal control terminal, the above-mentioned analog-to-digital conversion of above-mentioned differential amplifier circuit 01
The signal control terminal of circuit 02 and the electrical connection of above-mentioned coordination electrode, the other end of control circuit are electrically connected with above-mentioned signaling interface
The control signal received is converted to each electricity in corresponding control signal process circuit by (not shown in Fig. 9), the control circuit
The signal of road work and the signal (clock signal and row enabling signal) of the work of control sensor chip, and it is input to correspondence
Signal end, the work of each sensor chip in detection unit and each circuit in signal processing circuit is controlled
System.
As shown in figure 9, above-mentioned signal processing circuit further includes correcting circuit in another preferred embodiment of the application
03, which includes input terminal, and above-mentioned input terminal is electrically connected with the output terminal of above-mentioned analog to digital conversion circuit 02, above-mentioned benefit
The signal control terminal of positive circuit 03 is electrically connected with above-mentioned control circuit 04, above-mentioned correcting circuit 03 be used for above-mentioned digital signal into
Row is corrected and exported.
The signal detected by detecting electrode usually than relatively low, it is necessary to be amplified processing to it, but after signal amplification
Noise signal entrained by it is also amplified therewith, therefore the correcting circuit is mainly to eliminate what is brought in itself by sensor chip
Error, obtain the useful signal after enhanced processing.A register (not drawn in figure), the deposit are generally comprised in correcting circuit
The noise signal collected under static state is saved in device as augmenting factor, real-time letter of the prior art may be employed
The correction method of noise signal number is subtracted, is just repeated no more herein.
In signal processing circuit 231 in the application and the output of individual register pair correcting circuit need not be set to believe
Number stored and be delayed, it is not required that set the differential amplifier circuit that is delayed being electrically connected with register in register not
Detection signal (i.e. different test points corresponding detection signal) in the same time carries out differential amplification, it is only necessary to the biography that control is not gone together
The line scan signals of sensor chip so that it has delay, it is possible to detect whether the thickness of film is deposited in a certain direction
In exception, this kind of structure of the detecting device is simple, and can be simple and efficient the accurately thickness to film and its abnormal conditions into
Row detection.
Apply voltage on public electrode in order to more convenient, as shown in Figure 1, the preferably above-mentioned common unit of the application also wraps
It includes：Signal input part, the signal input part are used to input the electric signal of power supply to above-mentioned public electrode.
In another embodiment of the application, as shown in Figure 1, above-mentioned common unit 1 further includes：First substrate 10, it is above-mentioned
Public electrode 11 is arranged on the first surface of above-mentioned first substrate 10, detection unit 2 include second substrate 20, second substrate with
Above-mentioned common unit 1 is arranged at intervals on above-mentioned first direction, and the first surface of above-mentioned first substrate 10 is towards above-mentioned second base
The first surface of plate 20, and as shown in Fig. 2, each the sensor chip 21 is arranged on the first surface of above-mentioned second substrate 20
On, above-mentioned signal processing unit 23 is arranged on the second surface of above-mentioned second substrate 20, and the first of above-mentioned first substrate 10
The second surface on surface, the first surface of above-mentioned second substrate 20 and above-mentioned second substrate 20 is each parallel to above-mentioned first plane.
As shown in Figure 1, signal input part 13 is arranged on the second surface opposite with first surface of first substrate 10.
First substrate is the carrier of common unit other structures, and second substrate is the carrier of detection unit other structures, and
And first substrate and second substrate are staggered relatively to facilitate composition transmission channel.It is smooth between two pole plates for the ease of film to be measured
Transmission, according to the difference of the size of film product to be measured, the distance between two pole plates is between 1mm to 10mm.But the distance of the two
The scope is not limited to, the distance of the two can be arranged on suitable scope by those skilled in the art according to specific circumstances
It is interior.
It can be glass substrate, PCB substrate, metal substrate sheet or pottery that first substrate is separately selected from second substrate
Porcelain plate substrate.The material of two substrates can it is identical can not also be identical.
First substrate is PCB substrate in a kind of embodiment of the application, and required figure is designed in PCB substrate,
Public electrode is set, and to public electrode input electrical signal it is made to carry charge by power supply.And in the embodiment, the
Two substrates are also PCB substrate.
In order to protect common unit and detection unit, as shown in Figure 10, the detection device of the preferably above-mentioned film thickness of the application is also
Including：First framework 14, the first protective substrate 12,24 and second protective substrate 22 of second framework, wherein, the first framework 14 has
First receiving space, above-mentioned first framework 14 is located on above-mentioned first substrate 10 and above-mentioned common unit 1 is located at above-mentioned first
In accommodation space；First protective substrate 12 is connected with above-mentioned first framework 14, and for protecting each public electrode；Second framework 24
With the second accommodation space, above-mentioned second framework 24 is located on above-mentioned second substrate 20, and above-mentioned detection unit 2 is positioned at above-mentioned
In second accommodation space；Second protective substrate 22 is connected with above-mentioned second framework 24, and for protecting each detecting electrode.
The material for forming above-mentioned first framework and second framework can be plastic frame, be made up of Shooting Technique, be formed
The material of first protective substrate and the second protective substrate can be glass plate or ceramic base stage, and the material of the two can be with
It is identical or different.
Common unit in the application can include a public electrode, can also include multiple public electrodes, this field
Technical staff can according to actual conditions set public electrode quantity, when common unit only there are one public electrode when, it is public
Electrode is the larger plane electrode of an area, and effect is can to form electrostatic induction electrode pair with being arranged oppositely detecting electrode
Youngster, area will at least cover whole detecting electrodes to being set to detection unit.
In a kind of embodiment of the application, as shown in Fig. 1 and Figure 10, a public affairs are only included in the common unit in the application
Common electrode 11.
It can be seen from the above description that the application the above embodiments realize following technique effect：
Detection device in the application includes at least two rows along the spaced sensor chip of film moving direction to be measured,
And each chip includes multiple detecting electrodes spaced in a second direction, and the density of detecting electrode determines detection signal
Resolution ratio, and then determine accuracy of detection, during atual detection, it can according to demand, adjust the inspection of sensor core on piece
It surveys the quantity of electrode or adjusts the quantity of sensor chip, the accuracy of the detection device of film thickness can so be adjusted flexibly, make
Higher accuracy of detection can be obtained by obtaining the detection device.The detection device can not only accurately detect the film at different position
Thickness moreover, the detection device can obtain the testing result of the test point for different lines of not going together, passes through the different lines to not going together
The electric signal of test point do calculus of differences, and then it is different to accurately judge that out whether film in all directions thickness occurs
Often.
The foregoing is merely the preferred embodiments of the application, are not limited to the application, for the skill of this field
For art personnel, the application can have various modifications and variations.It is all within spirit herein and principle, made any repair
Change, equivalent substitution, improvement etc., should be included within the protection domain of the application.
Claims (8)
1. a kind of detection device of film thickness, including common unit and detection unit, the common unit includes at least one public
Electrode, which is characterized in that the detection unit includes：
At least two rows are along the spaced sensor chip of film moving direction to be measured, each sensor chip and the public list
Member is opposite in a first direction and is arranged at intervals, and multiple sensor chips of each row are alternatively arranged in a second direction, described
Interval between common unit and each sensor chip forms the transmission channel of the film to be measured, each sensor chip
Including multiple detecting electrodes that a line is arranged along the second direction, the second direction and the moving direction of the film to be measured hang down
Directly, the first direction is vertical with the first plane, and first plane is parallel with the second direction, each sensor chip
For sensing electric signal and the output on the public electrode；And
Signal processing unit is electrically connected with each sensor chip, and the electric signal of each sensor chip output is carried out
It handles and exports,
The detection unit includes the identical sensor chip of two rows,
Each sensor chip further includes coordination electrode, and the coordination electrode is used for sensor chip described in each row of input control
The clock signal and row enabling signal of work simultaneously export the electric signal that the sensor chip detects, the sensing do not gone together
The row enabling signal of device chip has delay.
2. the detection device of film thickness according to claim 1, which is characterized in that the signal processing unit includes：
Signal processing circuit is electrically connected with each sensor chip；And
Signaling interface is electrically connected with the signal processing circuit, for input control signal with exporting the signal processing circuit
Treated electric signal.
3. the detection device of film thickness according to claim 2, which is characterized in that the signal processing circuit includes：
Differential amplifier circuit, including first input end and the second input terminal, the first input end and sensor core described in a line
Each sensor chip electrical connection in piece, second input terminal and each sensor chip in sensor chip described in another row
Electrical connection, the electric signal for the sensor chip output that the differential amplifier circuit is not gone together for differential amplification；
Analog to digital conversion circuit, one end are electrically connected with the output terminal of the differential amplifier circuit, and analog-digital conversion circuit as described is used for will
The amplified electric signal of differential amplifier circuit is converted to digital signal；And
Control circuit, one end and signal control terminal, the signal control terminal of analog-digital conversion circuit as described of the differential amplifier circuit
And each coordination electrode electrical connection, the other end are electrically connected with the signaling interface.
4. the detection device of film thickness according to claim 3, which is characterized in that the signal processing circuit further includes：
Correcting circuit, including input terminal, the input terminal is electrically connected with the output terminal of analog-digital conversion circuit as described, the correction electricity
The signal control terminal on road is electrically connected to the control circuit, and the correcting circuit is for being corrected the digital signal and defeated
Go out.
5. the detection device of film thickness according to claim 1, which is characterized in that the common unit further includes：
Signal input part, for inputting the electric signal of power supply to the public electrode.
6. the detection device of film thickness according to claim 5, which is characterized in that
The common unit further includes：
First substrate, the public electrode are arranged on the first surface of the first substrate；
The detection unit includes：
Second substrate is arranged at intervals in said first direction with the common unit, the first surface court of the first substrate
To the first surface of the second substrate, each sensor chip is arranged on the first surface of the second substrate, described
Signal processing unit is arranged on the second surface of the second substrate, and the first surface of the first substrate and described second
The first surface of substrate is each parallel to first plane.
7. the detection device of film thickness according to claim 6, which is characterized in that the detection device of the film thickness further includes：
First framework has first receiving space, and first framework is located on the first substrate and the common unit
In the first receiving space；
First protective substrate is connected with first framework, and for protecting each public electrode；
Second framework has the second accommodation space, and the second framework is located on the second substrate and the detection unit
In second accommodation space；And
Second protective substrate is connected with the second framework, and for protecting each detecting electrode.
8. the detection device of film thickness according to any one of claim 1 to 7, which is characterized in that the common unit bag
Include a public electrode.
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| CN106352783B (en) * | 2016-08-31 | 2020-07-03 | 威海华菱光电股份有限公司 | Thickness detection device |
| JP6670786B2 (en) * | 2017-03-23 | 2020-03-25 | キオクシア株式会社 | Dicing method and laser processing device |
| CN107860304A (en) * | 2017-10-24 | 2018-03-30 | 威海华菱光电股份有限公司 | The thickness detection apparatus of film |
| CN109163668A (en) * | 2018-10-19 | 2019-01-08 | 威海华菱光电股份有限公司 | Thickness detection apparatus |
| CN110701989A (en) * | 2019-08-29 | 2020-01-17 | 威海华菱光电股份有限公司 | Thickness detection device and thickness detection method |
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