CN106059314B - A kind of LLC resonant power converters with dual resonance frequency - Google Patents
A kind of LLC resonant power converters with dual resonance frequency Download PDFInfo
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- CN106059314B CN106059314B CN201610575347.8A CN201610575347A CN106059314B CN 106059314 B CN106059314 B CN 106059314B CN 201610575347 A CN201610575347 A CN 201610575347A CN 106059314 B CN106059314 B CN 106059314B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/3353—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having at least two simultaneously operating switches on the input side, e.g. "double forward" or "double (switched) flyback" converter
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a kind of LLC resonant power converters with dual resonance frequency, in traditional two bridge arms, four NMOS tube M3、M4、M5And M6On the basis of the resonant network of the LLC resonant power converters of composition, it is additionally arranged including NMOS tube M1、M2Form a bridge arm, with inductance La form active electric network and be sequentially connected in series isolating transformer and Class D full-bridge rectifications, Class D full-bridge rectifications are sequentially connected output sample circuit, error amplifying circuit, STM32F407 microcontrollers and high frequency gate drive circuit by loading R, and the output driving of high frequency gate drive circuit adds in the resonant network of active electric network three bridge arms totally six metal-oxide-semiconductor M1~M6Normal work.There are two types of operating modes for present invention tool, substantially increase the light-load efficiency of LLC resonant converter, also have the advantages that narrow switching frequency range and symmetrically work in full-load range.
Description
Technical field
The present invention relates to DC/DC supply convertors more particularly to a kind of LLC resonant powers transformation with dual resonance frequency
Device.
Background technology
At present, for applying for the modern Switching Power Supply of commercial DC power supply and industrial power unit, have efficiently
The requirement of rate, high power density, small size and high reliability.Power supply is usually made of two-layer configuration, and the first order is boosting work(
Rate factor correcting grade, the second level are High Frequency Link DC/DC switching stages.Full bridge structure is due to its low voltage stress and smaller transformer
Size is widely used in the circuit of the second level.
Due to the switching device of conventional full bridge structure be lost in switching process and vibrate it is all bigger, now gradually by zero
Voltage switch (ZVS) full bridge structure is replaced, and wherein phase-shifting full-bridge (PSFB) structure is achieved that the no-voltage conducting of switching tube.
However, the high loop current loss of such as freewheeling period, secondary duty-cycle loss, transformer flux density variation and load electricity
Lagging leg is difficult to realize these shortcomings of ZVS etc. when stream reduces, and significantly limits application of the PSFB topologys in high frequency field.
LLC series resonance DC/DC converters realize the ZVS of primary side and the zero current of secondary in wide loading range and open
Close (ZCS), the Sofe Switch processes of LLC series resonant converters makes it apply in many occasions, particularly in high output voltage and
The occasion of low output current.In general, LLC series resonant converters adjust output voltage by adjusting switching frequency, this be because
If being operated in perceptual area for it, voltage conversion ratio will be increased by reducing its switching frequency.For LLC series resonant converters
Speech, it is difficult to obtain the converter of wide input/output range by frequency modulation(PFM) (FM) design.
At present, for LLC series resonant converters, consider to reduce switching frequency to obtain the project plan comparison of high light-load efficiency
It is more.Such as by increasing auxiliary circuit or using different control programs.However, these schemes have used complicated auxiliary winding
Or asymmetrical pulsewidth modulation (APWM) technology, have the shortcomings that power attenuation is big or magnetic flux density deviation.
Invention content
The present invention seeks to provide a kind of LLC resonant powers with dual resonance frequency in view of the defects existing in the prior art
Converter,
The present invention to achieve the above object, adopts the following technical scheme that：A kind of LLC resonant powers with dual resonance frequency
Converter, the resonant networks of LLC resonant power converters set that there are four NMOS tube M3、M4、M5And M6, inductance Lr and Lm and electricity
Hold Cr, NMOS tube M3And M4Form a bridge arm, NMOS tube M5And M6Form another bridge arm, NMOS tube M3Source electrode connection NMOS
Pipe M4Drain electrode and inductance Lr one end, NMOS tube M5Source electrode connection NMOS tube M6Drain electrode and inductance Lm one end, inductance Lm
Other end serial capacitance Cr after connection inductance Lr the other end, NMOS tube M3And M5Drain electrode be all connected with input voltage VINJust
End, NMOS tube M4And M6Source electrode be all connected with input voltage VINNegative terminal simultaneously connects input ground, NMOS tube M3、M4、M5And M6Source, leakage
Body diode and parasitic capacitance are respectively parallel between pole；
It is characterized in that：It adds including NMOS tube M1、M2The active electric network formed with inductance La, the active electric network is with including
Four NMOS tube M3、M4、M5And M6The resonant networks of LLC resonant power converters collectively form the resonance of additional active resonance
Network, wherein the NMOS tube M added1And M2Form third bridge arm, NMOS tube M1Source electrode connection NMOS tube M2Drain electrode and electricity
Feel one end of La, the other end connection NMOS tube M of inductance La3Source electrode and NMOS tube M4Drain electrode and the connecting pin of inductance Lr, NMOS tube
M1Drain electrode connection input voltage VINAnode, NMOS tube M2Source electrode connection input voltage VINNegative terminal simultaneously connects input ground, NMOS
Pipe M1And M2Source, drain electrode between be respectively parallel with body diode and parasitic capacitance；
The output for adding the resonant network of active resonance is sequentially connected in series isolating transformer and Class D full-bridge rectifications, Class
D full-bridge rectifications are sequentially connected output sample circuit, error amplifying circuit, STM32F407 microcontrollers and high frequency grid by load
Driving circuit, the output driving of high frequency gate drive circuit add in the resonant network of active electric network three bridge arms totally six metal-oxide-semiconductors
M1~M6Normal work；
The Same Name of Ends of isolating transformer primary side and different name end are connected in parallel with inductance Lm；
Class D full-bridge rectifications include diode D7、D8、D9、D10With filter capacitor Cf, diode D7Anode connection two
Pole pipe D8Cathode and isolating transformer secondary Same Name of Ends, diode D9Anode connection diode D10Cathode and isolation become
The different name end of depressor secondary, diode D7Cathode connection diode D9Cathode and filter capacitor CfAnode and as Class
One end of the output terminal connection load resistance R of D full-bridge rectifications, diode D8Anode connection diode D10Anode and filtered electrical
Hold CfNegative terminal and connect output ground；
It exports sample circuit and includes resistance R1、R2And Rs, resistance R1、R2Form output voltage sampling circuit, resistance R1One
The output terminal of end connection Class D full-bridge rectifications, resistance R1Other end connection resistance R2One end and as output voltage sample
The output terminal of circuit, resistance R2Another termination output ground；Resistance Rs forms output current sample circuit, and one end of resistance Rs connects
Connect the other end of load resistance R and as the output terminal of output current sample circuit, the other end connection output ground of resistance Rs；
Error amplifying circuit includes two operational amplifiers, and the negative terminal connection output voltage of one of operational amplifier is adopted
The output terminal of sample circuit, the output terminal of the negative terminal connection output current sample circuit of another operational amplifier, two operations are put
The anode of big device is all connected with output ground；
STM32F407 microcontrollers include A/D converters, hysteresis comparator, digital PI controller, frequency modulator and mould
Formula selection circuit, the output of two operational amplifiers is respectively the amplified signal of output voltage and output electricity in error amplifying circuit
The amplified signal of stream is all connected with the A/D translation interfaces of STM32F407 microcontrollers, the digital voltage feedback obtained after A/D conversions
Signal VFBWith reference voltage VREFIt is exported after being compared to digital PI controller, digital PI controller is by voltage feedback signal VFB
With reference voltage VREFDifference VEBy ratio, integral operation, obtained voltage signal is exported to frequency modulator, frequency modulation(PFM)
Device is realized by the timer in STM32F407 microcontrollers, and a pair of of frequency is obtained according to the size of digital PI controller output voltage
The adjustable complementary pulse output signal of rateAnd output it to mode selection circuit；The digital current obtained after A/D conversions
Feedback signal IFBWith reference current IREFIt is also exported after hysteresis comparator to mode selection circuit, mode selection circuit output G1
And G2, G3And G4And G5And G6Three pairs of signals, the output of hysteresis comparator determine enable signalLevel, and then certainly
Determine G1And G2, G3And G4The working condition of two pairs of output signals；
High frequency gate drive circuit includes three identical driving circuits, and each driving circuit is correspondingly connected with mode selection circuit
The G of output1And G2, G3And G4And G5And G6A pair of of signal in three pairs of signals, each driving circuit are equipped with isolated gate driving
It chip and is connected in parallel on two groups of identical outsides of isolated gate driving chip output terminal and bears shutdown voltage generation circuit, outside every group
Negative shutdown voltage generation circuit includes capacitance Cb, diode Dn, resistance Rg and Rgd, negative shutdown voltage production outside one of which
Capacitance C in raw circuitbOne end connection isolated gate driving chip an output terminal, capacitance Cb the other end connection diode
One end of the cathode of Dn, one end of resistance Rg and resistance Rgd, the signal control of the other end output of resistance Rg add active resonance
Three bridge arms of resonant network in upper switch tube grid in one of bridge arm, the other end connection diode Dn of resistance Rgd
Anode and isolated gate driving chip another output terminal, the signal of end output controls the upper switch Guan Yuan in above-mentioned bridge arm
Pole；The third output of one end connection isolated gate driving chip of capacitance Cb in the negative shutdown voltage generation circuit in another group of outside
End, capacitance CbOther end connection diode Dn cathode, one end of resistance Rg and one end of resistance Rgd, resistance Rg's is another
The lower switch tube grid of above-mentioned bridge arm in the resonant network of the additional active resonance of signal control of end output, resistance Rgd's is another
The anode of end connection diode Dn and the 4th output terminal of isolated gate driving chip, the signal of end output are additional as control
The lower switch pipe source electrode of above-mentioned bridge arm in the resonant network of active resonance；
The G that high frequency gate drive circuit is exported according to mode selection circuit1And G2, G3And G4And G5And G6The work of three pairs of signals
Or actually making the operating mode A B that state determines the resonant network of additional active electric network, Mode A and B have corresponded to two kinds respectively
Different resonant frequencies under different resonant frequencies, adds in the resonant network of active electric network three bridge arms totally six metal-oxide-semiconductor M1
~M6Working condition it is different：
If EN=1, G3And G4And G5And G6For pulse signal, G1 and G2 are 0, add the resonant network of active electric network
It is operated in Mode A；, whereas if EN=0, G1 and G2 and G5And G6For pulse signal, G3 and G4 are 0, add active electric network
Resonant network is operated in Mode B；In underloading, the operating mode of the resonant network of additional active electric network is switched by Mode A
To Mode B；
Mode A：The resonant network of additional active electric network includes metal-oxide-semiconductor M3、M4、M5And M6, inductance Lr and Lm and capacitance
Cr, in such a mode, resonant inductance Lr；
Mode B：The resonant network of additional active electric network includes metal-oxide-semiconductor M1、M2、M5And M6, inductance La, Lr and Lm and electricity
Hold Cr, in such a mode, resonant inductance is (La+Lr).
Six metal-oxide-semiconductor M in the above-mentioned resonant network for adding active resonance1~M6Use silicon carbide power metal-oxide-semiconductor conduct
Switching tube, the LLC resonant power converters of dual resonance frequency are operated in perceptual area.
Advantages of the present invention and remarkable result：
1) there are two resonant frequency, corresponding, dual resonance frequencies for dual resonance frequency LLC resonant powers converter tool
There are two types of operating modes for LLC resonant powers converter tool, and the pattern of converter work is determined according to the range of output power.
2) by adjusting working mode, in the case where not influencing heavily loaded efficiency, the light of LLC resonant converter is greatly improved
Carry efficiency.
3) dual resonance frequency LLC resonant powers converter uses silicon carbide power metal-oxide-semiconductor, and realizes ZVS in perceptual area,
Two kinds of operating modes so that switching frequency range is relatively narrow, symmetrically work in entire output area.
4) circuit is simple, at low cost without the complex control of application-specific integrated circuit, good reliability.
Description of the drawings
Fig. 1 is whole schematic diagram of the invention；
Fig. 2 is resonant network schematic diagram of the present invention；
Fig. 3 is resonant network working waveform figure of the present invention；
Fig. 4 is resonant network operation mode figure of the present invention；
Fig. 5 is the key waveforms figure of heavily loaded lower switch pipe；
Fig. 6 is the key waveforms figure for being lightly loaded lower switch pipe；
Fig. 7 is actual efficiency and model selection figure；
Fig. 8 is that efficiency at light load compares figure.
Specific embodiment
The technical solution of invention is described in detail below in conjunction with the accompanying drawings.
As shown in Figure 1, the resonant network of traditional LLC resonant power converters is set, there are four NMOS tube M3、M4、M5And M6,
Inductance Lr and Lm and capacitance Cr, NMOS tube M3And M4Form a bridge arm, NMOS tube M5And M6Form another bridge arm, NMOS
Pipe M3Source electrode connection NMOS tube M4Drain electrode and inductance Lr one end, NMOS tube M5Source electrode connection NMOS tube M6Drain electrode and
One end of inductance Lm, the other end of connection inductance Lr, NMOS tube M after the other end serial capacitance Cr of inductance Lm3And M5Drain electrode it is equal
Connect input voltage VINAnode, NMOS tube M4And M6Source electrode be all connected with input voltage VINNegative terminal simultaneously connects input ground, NMOS tube
M3、M4、M5And M6Source, drain electrode between be respectively parallel with body diode and parasitic capacitance.
The present invention is added on the basis of foregoing circuit including NMOS tube M1、M2The active electric network formed with inductance La, should
Active electric network is with including four traditional NMOS tube M3、M4、M5And M6LLC resonant power converters the common structure of resonant network
Into the resonant network 1 for adding active resonance, wherein the NMOS tube M added1And M2Form third bridge arm, NMOS tube M1Source electrode
Connect NMOS tube M2Drain electrode and inductance La one end, the other end connection NMOS tube M of inductance La3Source electrode and NMOS tube M4Drain electrode
With the connecting pin of inductance Lr, NMOS tube M1Drain electrode connection input voltage VINAnode, NMOS tube M2Source electrode connection input voltage
VINNegative terminal simultaneously connects input ground, NMOS tube M1And M2Source, drain electrode between be respectively parallel with body diode and parasitic capacitance.
The output for adding the resonant network 1 of active resonance is sequentially connected in series isolating transformer 2 and Class D full-bridge rectifications 3,
Class D full-bridge rectifications 3 are sequentially connected output sample circuit 4, error amplifying circuit 5, STM32F407 microcontrollers by loading R
Device 6 and high frequency gate drive circuit 7, the output driving of high frequency gate drive circuit 7 add three bridges in the resonant network 1 of active electric network
Arm totally six metal-oxide-semiconductor M1~M6Normal work.
The Same Name of Ends of 2 primary side of isolating transformer and different name end are connected in parallel with inductance Lm；
Class D full-bridge rectifications 3 include diode D7、D8、D9、D10With filter capacitor Cf, diode D7Anode connection two
Pole pipe D8Cathode and isolating transformer secondary Same Name of Ends, diode D9Anode connection diode D10Cathode and isolation become
The different name end of depressor secondary, diode D7Cathode connection diode D9Cathode and filter capacitor CfAnode and as Class
One end of the output terminal connection load resistance R of D full-bridge rectifications, diode D8Anode connection diode D10Anode and filtered electrical
Hold CfNegative terminal and connect output ground.
It exports sample circuit 4 and includes resistance R1、R2And Rs, resistance R1、R2Form output voltage sampling circuit, resistance R1One
The output terminal of end connection Class D full-bridge rectifications, resistance R1Other end connection resistance R2One end and as output voltage sample
The output terminal of circuit, resistance R2Another termination output ground；Resistance Rs forms output current sample circuit, and one end of resistance Rs connects
Connect the other end of load resistance R and as the output terminal of output current sample circuit, the other end connection output ground of resistance Rs.
Error amplifying circuit 5 includes two operational amplifiers, the negative terminal connection output voltage sampling circuit of operational amplifier I
Output terminal, operational amplifier II negative terminal connection output current sample circuit output terminal, the anode of two operational amplifiers
It is all connected with output ground.
STM32F407 microcontrollers 6 include A/D converters, hysteresis comparator, digital PI controller, frequency modulator and
Mode selection circuit, the output of two operational amplifiers is respectively amplified signal and the output of output voltage in error amplifying circuit
The amplified signal of electric current, is all connected with the A/D translation interfaces of STM32F407 microcontrollers, and the digital voltage obtained after A/D conversions is anti-
Feedback signal VFBWith reference voltage VREFIt is exported after being compared to digital PI controller, digital PI controller is by voltage feedback signal
VFBWith reference voltage VREFDifference VEBy ratio, integral operation, obtained voltage signal is exported to frequency modulator, frequency tune
Device processed is realized by the timer in STM32F407 microcontrollers, and a pair is obtained according to the size of digital PI controller output voltage
The adjustable complementary pulse output signal of frequencyAnd output it to mode selection circuit；The number electricity obtained after A/D conversions
Flow feedback signal IFBWith reference current IREFIt is also exported after hysteresis comparator to mode selection circuit, mode selection circuit output
G1And G2, G3And G4And G5And G6Three pairs of signals, the output of hysteresis comparator determine enable signalLevel, and then
Determine G1And G2, G3And G4The working condition of two pairs of output signals.
High frequency gate drive circuit 7 includes three identical driving circuits, and each driving circuit is correspondingly connected with model selection electricity
The G of road output1And G2, G3And G4And G5And G6A pair of of signal in three pairs of signals, each driving circuit are equipped with isolated gate drive
It dynamic chip and is connected in parallel on two groups of identical outsides of isolated gate driving chip output terminal and bears shutdown voltage generation circuit.Outside two groups
It bears shutdown voltage generation circuit and includes capacitance C in portionb, diode Dn, resistance Rg and Rgd.With the driving metal-oxide-semiconductor M drawn in scheming1、
M2Bridge arm for, the capacitance C in the negative shutdown voltage generation circuit in one group of outsideb1One end connection isolated gate driving chip one
A output terminal, capacitance Cb1Other end connection diode Dn1Cathode, resistance Rg1One end and resistance Rgd1One end, resistance
The signal g of the other end output of RgM1Control upper switch pipe M1Grid, resistance Rgd1Other end connection diode Dn1Anode and
Another output terminal of isolated gate driving chip, the signal S of end outputM1Control upper switch pipe M1Source electrode；Another group of outside is negative
Turn off the capacitance C in voltage generation circuitb2One end connection isolated gate driving chip third output terminal, capacitance Cb2It is another
One end connection diode Dn2Cathode, resistance Rg2One end and resistance Rgd2One end, resistance Rg2The other end output signal
gM2Control lower switch pipe M2Grid, resistance Rg2Other end connection diode Dn2Anode and isolated gate driving chip the 4th
A output terminal, the signal S of end outputM2Control lower switch pipe M2Source electrode.Drive metal-oxide-semiconductor M3、M4Bridge arm and driving metal-oxide-semiconductor M5、M6
The circuit of bridge arm and driving metal-oxide-semiconductor M1、M2The identical (not shown) of circuit of bridge arm.
The G that high frequency gate drive circuit 7 is exported according to mode selection circuit1And G2, G3And G4And G5And G6Three pairs of signals
Actually or working condition determines the operating mode A B of the resonant network 1 of additional active electric network, Mode A and B are corresponding respectively
Two different resonant frequencies under different resonant frequencies, add in the resonant network of active electric network three bridge arms totally six MOS
Pipe M1~M6Working condition it is different：
If EN=1, G3And G4And G5And G6For pulse signal, G1And G2It is 0, adds the resonant network work of active electric network
Make in Mode A；, whereas if EN=0, G1And G2And G5And G6For pulse signal, the resonant network work of active electric network is added
In Mode B；In underloading, the operating mode of the resonant network of additional active electric network is switched to Mode B by Mode A.
Mode A：The resonant network of additional active electric network includes metal-oxide-semiconductor M3、M4、M5And M6, inductance Lr and Lm and capacitance
Cr, in such a mode, resonant inductance Lr.
Mode B：The resonant network of additional active electric network includes metal-oxide-semiconductor M1、M2、M5And M6, inductance La, Lr and Lm and electricity
Hold Cr, in such a mode, resonant inductance is (La+Lr).
Six metal-oxide-semiconductor M in the above-mentioned resonant network for adding active resonance1~M6Use silicon carbide power metal-oxide-semiconductor conduct
Switching tube, the LLC resonant power converters of dual resonance frequency are operated in perceptual area.
As shown in Fig. 2, the resonant network 1 with attachment active electric network increases compared with traditional LLC resonant networks
By a pair of of small power switch pipe M1~M2With the active electric network of auxiliary induction La compositions.Each switching tube in resonant network 1 by
The square wave of 50% duty ratio controls, and being inserted into one section of dead time between two pipes above and below each bridge arm prevents straight-through phenomenon.D1
~D6And C1~C6Respectively M1~M6Body diode and parasitic capacitance.
As shown in figure 3, it is less than under resonant frequency for switching frequency, the key of dual resonance frequency LLC resonant power converters
Oscillogram.VGSNMOS conductings, M are represented for high level3~M6It is operated in Mode A, M1~M2And M5~M6It is operated in Mode B.VPRIFor
The original edge voltage of isolating transformer 2, VDS(M6)Drain-source voltage for M6.iD(M6)And iD(M5)The conducting electric current of respectively M6 and M5, iM
For the electric current on inductance Lm.iPRIFor the electric current on resonant inductance.VRect (D8, D9)、VRect (D7, D10)For Class D full-bridge rectifications
Diode D8, D9And D7, D10On voltage.
As shown in figure 4, the strikethrough in figure on device label represents that the device does not work in this working stage.A in mode
For, dual resonance frequency LLC resonance variator specific works mode is as follows：
1) [t0~t1] stage：T0 moment, M3 and M6 are connected due to body diode reverse biases, and input voltage vin is whole
It is added in resonant network, resonance current ir (t) and the positive increases of excitation inductance current iM.Resonance current ir (t) is using frequency as fs
Sine wave form increase.Due to D7 and D10 forward bias, the voltage on Lm is reflected into the electricity of primary side for secondary output voltage
Press nVo.It is equal with resonance circuit that this stage continues to that exciting current increases to.
2) [t1~t2] stage：T1 moment, exciting current increase to, therefore transformer primary side winding equal with resonance circuit
Electric current fall to 0, therefore, D7 and D10 are ZCS shutdowns.In this stage, without energy transmission to secondary.This stage continues
To t2, at this time diagonal switching tube shutdown.
3) [t2~t3] stage：The t2 moment turns off M3 and M6.VDS(M3)And VDS(M6)Due to the effect of parasitic capacitance C3~C6
It is gradually begun to ramp up from 0, at the same time VDS(M4)And VDS(M5)Gradually drop to 0 from Vin.Since the curent change of resonant network is stagnant
After the variation of voltage, so resonance current ir (t) starts to charge to C3~C6.
4) [t3~t4] stage：VDS(M3)And VDS(M6)Increase to Vin at the t3 moment, and keep Vin constant in this stage.
VDS(M4)And VDS(M5)Drop to 0 at the t3 moment.Thus, D4And D5Forward bias.Voltage on resonant network is (- Vin), excitation
Electric current and resonance current are begun to decline, iD(M4)And iD(M5)It is negative.This stage is maintained to t4, at this time VGS(M4)And VGS(M5)It is touched
Hair, iD(M4)And iD(M5)Reach maximum value.
5) [t4~t5] stage：T4 moment, switching tube forward bias, iD(M4)And iD(M5)It begins to decline.When reverse current reaches
During to 0, primary current starts forward direction and flows through switching tube.T5 moment and t0Moment is similar.
The loss of switching tube is divided into three parts：Grid drive loss Pdrive, conduction loss Pcond and switching loss Psw.
Under specific loading condition, Pcond is held essentially constant in entire switching frequency range.Therefore Pcond, which has little influence on, appoints
Efficiency under what switching mode.Pdrive and Psw is by frequency influence, and Pdrive is well below Psw, thus Pdrive can be neglected
Slightly disregard.
The course of work of the present invention is as follows：
In LLC resonant full bridge converters, since switching tube is ZVS conductings, thus Psw is only off the shutdown at moment
Loss, moreover, Psw increases with the increase of switching frequency fs.According to frequency modulation(PFM) principle, LLC resonant converter is being lightly loaded
When, switching frequency fs is increased, so Psw is also increased at light load, light-load efficiency reduces.In order to reduce at light load
Psw devises the scheme for switching the operating mode of LLC resonant networks according to load current size：In underloading, add
The operating mode of the resonant network of active electric network is switched to Mode B by Mode A.
In the present invention, using the control of STM32F407 microcontroller implementations.Output voltage and output current are sampled, and are put
It is big and be converted to digital feedback signal VFB and IFB.Internal PI functional units calculate the poor VE of VFB and reference voltage VREF, will
Input signal of this value as frequency modulator, frequency modulator generate two complementary pulse signals.In addition to this, sluggish ratio
Also it is used for implementation pattern compared with device functional unit to control, internal reference current IREF and stagnant ring IHYS all opening for control model
It closes.Mode selection circuit is determined based on the output of comparatorIf EN=1, G3 and G4 as pulse signal, G1 and
G2 signals are 0, therefore converter is operated in Mode A.Opposite, if EN=0, converter is operated in Mode B.
Below by taking model machine as an example, the description present invention：
It parameter and is described as follows：
Vin=400V, Vo=100V, Po (max)=1200W, 500~800kHz of switching frequency are fully loaded with 500kHz.
It is illustrated in figure 5 the lower M of heavy duty of the invention6Key waveforms figure, switching frequency 600kHz, output voltage is
120V, output current 10A.As seen from the figure under fully loaded transportation condition, M6Realize ZVS conductings.Since switching tube is symmetrically to work
, therefore all switching tubes realize ZVS conductings.
It is illustrated in figure 6 M under the conditions of the present invention is lightly loaded6Key waveforms figure, switching frequency 680kHz, output voltage is
100V, output current 4A.As seen from the figure under the conditions of underloading, M6Realize ZVS conductings.Since switching tube is symmetrically to work
, therefore all switching tubes realize ZVS conductings.
As shown in fig. 7, it is 400V in input Vin, output Vo is the LLC resonance of the present invention of actual test under conditions of 100V
The efficiency of converter, and Sofe Switch process is realized in entire output power range.The maximal efficiency of converter is defeated
Go out to be measured when 1kW (83.3% output power), tieed up in 0.5~1.2kW (40%~100% output power) range internal efficiency
It holds more than 93%.
As shown in fig. 7, output power, in the range of 500~700W, the transducer effciency under both of which is essentially the same,
Therefore pattern switching setting is as follows：
A) when output keeps fully loaded, converter is operated in Mode A；
B) when output power is less than 500W, converter is operated in Mode B, is maintained to output power higher than 700W.
As shown in figure 8, compare figure for efficiency at light load.It can be seen that the light-load efficiency using LLC resonant converter of the present invention
It is greatly improved during than not using.
Claims (2)
1. a kind of LLC resonant power converters with dual resonance frequency, the resonant network of LLC resonant power converters is equipped with four
A NMOS tube M3、M4、M5And M6, inductance Lr and Lm and capacitance Cr, NMOS tube M3And M4Form a bridge arm, NMOS tube M5And M6
Form another bridge arm, NMOS tube M3Source electrode connection NMOS tube M4Drain electrode and inductance Lr one end, NMOS tube M5Source electrode connect
Meet NMOS tube M6Drain electrode and inductance Lm one end, the other end of connection inductance Lr after the other end serial capacitance Cr of inductance Lm,
NMOS tube M3And M5Drain electrode be all connected with input voltage VINAnode, NMOS tube M4And M6Source electrode be all connected with input voltage VINNegative terminal
And connect input ground, NMOS tube M3、M4、M5And M6Source, drain electrode between be respectively parallel with body diode and parasitic capacitance；
It is characterized in that：It adds including NMOS tube M1、M2The active electric network formed with inductance La, the active electric network is with including four
NMOS tube M3、M4、M5And M6The resonant networks of LLC resonant power converters collectively form the resonant network of additional active resonance,
The NMOS tube M wherein added1And M2Form third bridge arm, NMOS tube M1Source electrode connection NMOS tube M2Drain electrode and inductance La
One end, the other end connection NMOS tube M of inductance La3Source electrode and NMOS tube M4Drain electrode and the connecting pin of inductance Lr, NMOS tube M1's
Drain electrode connection input voltage VINAnode, NMOS tube M2Source electrode connection input voltage VINNegative terminal simultaneously connects input ground, NMOS tube M1
And M2Source, drain electrode between be respectively parallel with body diode and parasitic capacitance；
The output for adding the resonant network of active resonance is sequentially connected in series isolating transformer and Class D full-bridge rectifications, and Class D are complete
Bridge rectification is sequentially connected output sample circuit, error amplifying circuit, STM32F407 microcontrollers and high frequency grid by load and drives
Circuit, the output driving of high frequency gate drive circuit add in the resonant network of active electric network three bridge arms totally six metal-oxide-semiconductor M1~M6
Normal work；
The Same Name of Ends of isolating transformer primary side and different name end are connected in parallel with inductance Lm；
Class D full-bridge rectifications include diode D7、D8、D9、D10With filter capacitor Cf, diode D7Anode connection diode D8
Cathode and isolating transformer secondary Same Name of Ends, diode D9Anode connection diode D10Cathode and isolating transformer pair
The different name end on side, diode D7Cathode connection diode D9Cathode and filter capacitor CfAnode and be used as Class D full-bridges
One end of the output terminal connection load resistance R of rectification, diode D8Anode connection diode D10Anode and filter capacitor Cf
Negative terminal and connect output ground；
It exports sample circuit and includes resistance R1、R2And Rs, resistance R1、R2Form output voltage sampling circuit, resistance R1One end connect
Meet the output terminal of Class D full-bridge rectifications, resistance R1Other end connection resistance R2One end and as output voltage sampling circuit
Output terminal, resistance R2Another termination output ground；Resistance Rs forms output current sample circuit, and one end connection of resistance Rs is negative
Carry the other end of resistance R and as the output terminal of output current sample circuit, the other end connection output ground of resistance Rs；
Error amplifying circuit includes two operational amplifiers, the negative terminal connection output voltage sampling electricity of one of operational amplifier
The output terminal on road, the output terminal of the negative terminal connection output current sample circuit of another operational amplifier, two operational amplifiers
Anode be all connected with output ground；
STM32F407 microcontrollers include A/D converters, hysteresis comparator, digital PI controller, frequency modulator and pattern choosing
Select circuit, the output of two operational amplifiers is respectively the amplified signal and output current of output voltage in error amplifying circuit
Amplified signal is all connected with the A/D translation interfaces of STM32F407 microcontrollers, the digital voltage feedback signal obtained after A/D conversions
VFBWith reference voltage VREFIt is exported after being compared to digital PI controller, digital PI controller is by voltage feedback signal VFBWith ginseng
Examine voltage VREFDifference VEBy ratio, integral operation, obtained voltage signal is exported to frequency modulator, frequency modulator by
Timer in STM32F407 microcontrollers realizes that obtaining a pair of of frequency according to the size of digital PI controller output voltage can
The complementary pulse output signal of tuneAnd output it to mode selection circuit；The digital current feedback obtained after A/D conversions
Signal IFBWith reference current IREFIt is also exported after hysteresis comparator to mode selection circuit, mode selection circuit output G1And G2,
G3And G4And G5And G6Three pairs of signals, the output of hysteresis comparator determine enable signalLevel, and then determine G1With
G2, G3And G4The working condition of two pairs of output signals；
High frequency gate drive circuit includes three identical driving circuits, and each driving circuit is correspondingly connected with mode selection circuit output
G1And G2, G3And G4And G5And G6A pair of of signal in three pairs of signals, each driving circuit are equipped with isolated gate driving chip
And be connected in parallel on two groups of identical outsides of isolated gate driving chip output terminal and bear shutdown voltage generation circuit, every group of outside is negative to close
Disconnected voltage generation circuit includes capacitance Cb, diode Dn, resistance Rg and Rgd, and negative shutdown voltage generates electricity outside one of which
One output terminal of one end connection isolated gate driving chip of the capacitance Cb in road, the other end connection diode Dn's of capacitance Cb
One end of cathode, one end of resistance Rg and resistance Rgd, the signal control of the other end output of resistance Rg add the humorous of active resonance
Upper switch tube grid in three bridge arms of vibrating network in one of bridge arm, the sun of the other end connection diode Dn of resistance Rgd
Pole and another output terminal of isolated gate driving chip, the signal of end output control the upper switch pipe source electrode in above-mentioned bridge arm；
The third output terminal of one end connection isolated gate driving chip of capacitance Cb in the negative shutdown voltage generation circuit in another group of outside,
Cathode, one end of resistance Rg and one end of resistance Rgd of the other end connection diode Dn of capacitance Cb, the other end of resistance Rg are defeated
The lower switch tube grid of above-mentioned bridge arm, the other end of resistance Rgd connect in the resonant network of the additional active resonance of signal control gone out
The anode of diode Dn and the 4th output terminal of isolated gate driving chip are connect, the signal of end output is additional active as control
The lower switch pipe source electrode of above-mentioned bridge arm in the resonant network of resonance；
The G that high frequency gate drive circuit is exported according to mode selection circuit1And G2, G3And G4And G5And G6The work shape of three pairs of signals
Actually or state determines the operating mode A B of the resonant network of additional active electric network, Mode A and B have corresponded to two kinds of differences respectively
Resonant frequency, under different resonant frequencies, add in the resonant network of active electric network three bridge arms totally six metal-oxide-semiconductor M1~M6
Working condition it is different：
If EN=1, G3 and G4 and G5And G6For pulse signal, G1 and G2 are 0, add the resonant network work of active electric network
In Mode A；, whereas if EN=0, G1 and G2 and G5And G6For pulse signal, G3 and G4 are 0, add the resonance of active electric network
Network is operated in Mode B；In underloading, the operating mode of the resonant network of additional active electric network is switched to mould by Mode A
Formula B；
Mode A：The resonant network of additional active electric network includes metal-oxide-semiconductor M3、M4、M5And M6, inductance Lr and Lm and capacitance Cr, herein
Under pattern, resonant inductance Lr；
Mode B：The resonant network of additional active electric network includes metal-oxide-semiconductor M1、M2、M5And M6, inductance La, Lr and Lm and capacitance Cr,
In such a mode, resonant inductance is (La+Lr).
2. the LLC resonant power converters according to claim 1 with dual resonance frequency, which is characterized in that described attached
Six metal-oxide-semiconductor M in resonant network added with source resonance1~M6Using silicon carbide power metal-oxide-semiconductor as switching tube, double resonance
The LLC resonant power converters of frequency are operated in perceptual area.
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| CN106786667B (en) * | 2016-12-23 | 2019-04-16 | 芜湖国睿兆伏电子有限公司 | A kind of phase shift frequency modulation mixing control circuit for LLC resonant power |
| CN106655872B (en) * | 2017-02-14 | 2023-05-23 | 华南理工大学 | Series transformer type LLC positive and negative pulse double-battery charging power supply system |
| CN108720081A (en) * | 2017-04-13 | 2018-11-02 | 湖南中烟工业有限责任公司 | A kind of ultrasonic electronic cigarette circuit and implementation method |
| CN107395022B (en) * | 2017-07-25 | 2023-08-08 | 杭州士兰微电子股份有限公司 | Resonant switching converter and control method thereof |
| CN107359799A (en) * | 2017-07-28 | 2017-11-17 | 西南交通大学 | A kind of control method and its device of LCC resonance DC DC converters |
| CN109510501B (en) * | 2017-09-12 | 2021-07-09 | 华为技术有限公司 | Soft switching converter and wireless charging system |
| CN109980941B (en) * | 2019-03-20 | 2021-04-13 | 深圳市皓文电子有限公司 | Switch control unit of LCC resonant DCDC converter and converter |
| CN110212767B (en) * | 2019-04-30 | 2020-08-04 | 东南大学 | Digital control method for realizing multi-step frequency modulation of LL C resonant converter |
| CN110601543B (en) * | 2019-09-11 | 2020-08-18 | 广州金升阳科技有限公司 | Wide gain control method of LLC resonant converter and resonant converter thereof |
| TWI768454B (en) * | 2020-09-02 | 2022-06-21 | 僑威科技股份有限公司 | High-efficiency llc resonant converter |
| CN112713782B (en) * | 2021-03-29 | 2021-07-13 | 深圳市正浩创新科技股份有限公司 | Resonant converter and synchronous rectification control method thereof |
| TWI752891B (en) * | 2021-06-25 | 2022-01-11 | 台達電子工業股份有限公司 | Llc resonance converter, control unit, and method of controlling the same |
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