CN106057929A - 一种碳化硅基pin结构近红外光电二极管及其制备方法 - Google Patents
一种碳化硅基pin结构近红外光电二极管及其制备方法 Download PDFInfo
- Publication number
- CN106057929A CN106057929A CN201610378283.2A CN201610378283A CN106057929A CN 106057929 A CN106057929 A CN 106057929A CN 201610378283 A CN201610378283 A CN 201610378283A CN 106057929 A CN106057929 A CN 106057929A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- near infrared
- described step
- crystal germanium
- infrared photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 38
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000013078 crystal Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000605 extraction Methods 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 28
- 230000012010 growth Effects 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 18
- 238000002360 preparation method Methods 0.000 claims description 15
- 229910000078 germane Inorganic materials 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 229910000085 borane Inorganic materials 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000004062 sedimentation Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 6
- 238000010422 painting Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 9
- 238000004891 communication Methods 0.000 abstract description 6
- 238000007664 blowing Methods 0.000 abstract 1
- 238000007650 screen-printing Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008717 functional decline Effects 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only Ge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
本发明公开了一种碳化硅基PIN结构近红外光电二极管，本发明还公开了碳化硅基PIN结构近红外光电二极管的制备方法，首先对N型单晶碳化硅衬底进行清洗，清洗后用氮气吹干待用，然后对N型单晶碳化硅衬底进行沉积，沉积出本征晶体锗薄膜；其次对得到的本征晶体锗薄膜再次进行沉积，沉积出P型重掺杂晶体锗薄膜，再次对得到的带有P型重掺杂晶体锗薄膜的样品在N型单晶碳化硅面沉积ITO电极，接下来对得到的样品在P型重掺杂晶体锗薄膜上沉积ITO电极，最后进行退火以形成欧姆接触，然后利用网版印刷法于正背面将银导线与ITO电极连接形成引出电极，本发明解决了现有技术中存在的由于碳化硅材料禁带宽而使只能受控于紫外光源而不能近红外通信光源的问题。
Description
技术领域
本发明属于可扩展碳化硅光控二极管的光谱应用技术领域，具体涉及一种碳化硅基PIN结构近红外光电二极管，本发明还涉及碳化硅基PIN结构近红外光电二极管的制备方法。
背景技术
伴随着电子产品的广泛应用，电磁环境对电子产品的安全性和可靠性产生的影响和危害不容忽视。电磁干扰使得常规电子系统性能下降，以至无法工作的现象时有发生。采用光电隔离的方式是解决电磁干扰问题的有效途径，这使人们对研制光控开关器件产生了极大兴趣。受硅材料本身物理性能的限制，在高温、高频和大功率应用方面，硅基各类光控开关器件的局限性日渐明显，而碳化硅器件却显露出巨大潜力。但是，由于碳化硅材料禁带宽，致使该碳化硅光开关只能受控于紫外光源，而紫外光不仅对人体有害，也并非常用的近红外通信光源，这使得碳化硅光控开关器件的应用受到了限制。
发明内容
本发明的第一目的是提供一种碳化硅基PIN结构近红外光电二极管，解决了现有技术中存在的由于碳化硅材料禁带宽而使只能受控于紫外光源而不能近红外通信光源的问题。
本发明的第二目的是提供一种碳化硅基PIN结构近红外光电二极管的制备方法。
本发明所采用的第一技术方案是，一种碳化硅基PIN结构近红外光电二极管，具体结构为：包括二极管两端的电极，两电极之间依次设置有P型晶体锗薄膜、I型晶体锗薄膜和N型单晶碳化硅衬底。
本发明所采用的第二技术方案是，一种碳化硅基PIN结构近红外光电二极管的制备方法，具体按照以下步骤实施：
步骤1、对N型单晶碳化硅衬底进行清洗，清洗后用氮气吹干待用；
步骤2、对步骤1清洗后的N型单晶碳化硅衬底进行沉积，沉积出本征晶体锗薄膜；
步骤3、对步骤2得到的本征晶体锗薄膜再次进行沉积，沉积出P型重掺杂晶体锗薄膜；
步骤4、对步骤3得到的带有P型重掺杂晶体锗薄膜的样品利用磁控溅射设备，在N型单晶碳化硅面沉积ITO电极；
步骤5、对步骤4得到的样品利用磁控溅射设备，在P型重掺杂晶体锗薄膜上沉积ITO电极；
步骤6、使用快速退火设备对步骤5得到的样品进行退火以形成欧姆接触；
步骤7、利用网版印刷法于对步骤6得到的样品的正背面将银导线与ITO电极连接形成引出电极。
本发明第二技术方案的特点还在于，
步骤1中清洗流程为：使用清洗液-丙酮-酒精-去离子水逐步对样品进行清洗。
步骤2中沉积时利用化学气相沉积设备，用氢气作为载气，将反应腔加热至500℃，通入锗烷作为生长源气体，生长温度控制为700℃-900℃，生长时间控制为0.2-3小时，锗烷流量控制为0.1-100毫升/分。
步骤3中沉积时使用化学气相沉积设备，用氢气作为载气，将反应腔加热至500℃，通入锗烷作为生长源气体，通入硼烷作为掺杂源，生长温度控制为700℃-900℃，锗烷流量控制为0.1-100毫升/分，硼烷流量控制为0.1-10毫升/分，生长时间控制为0.2-3小时。
步骤4中沉积时间控制为0.1-2小时，沉积压强为控制为0.1-10Pa，溅射功率控制为100-500瓦。
步骤5中沉积时间控制为0.1-2小时，沉积压强控制为0.1-10Pa,溅射功率控制为100-500瓦。
步骤6中退火温度控制为800℃-1100℃，退火时间控制为60秒-600秒。
本发明的有益效果是，碳化硅基PIN结构近红外光电二极管机器制备方法，利用晶体锗在单晶碳化硅上面的沉积成膜搭配，形成PIN异质结结构，解决碳化硅器件的近红外光控问题，使碳化硅器件能被常用的近红外通信光源控制，制备过程简单易行。
附图说明
图1是本发明一种碳化硅基PIN结构近红外光电二极管的结构示意图；
图2是本发明一种碳化硅基PIN结构近红外光电二极管的制备方法流程示意图。
图中，1.电极，2.P型晶体锗薄膜，3.I型晶体锗薄膜，4.N型单晶碳化硅衬底。
具体实施方式
下面结合附图和具体实施方式对本发明进行详细说明。
本发明利用晶体锗在单晶碳化硅上面的沉积成膜搭配，形成P-I-N异质结结构，N为N型单晶碳化硅衬底，I为本征晶体锗薄膜，P为P型掺杂晶体锗薄膜，锗薄膜作为可见-近红外光吸收层，解决碳化硅器件的近红外光控问题，使碳化硅器件能被常用的近红外通信光源控制。
本发明一种碳化硅基PIN结构近红外光电二极管，具体结构为：包括二极管两端的电极1，两电极1之间依次设置有P型晶体锗薄膜2、I型晶体锗薄膜3和N型单晶碳化硅衬底4，碳化硅基PIN结构近红外光电二极管的制备方法，具体按照以下步骤实施：
步骤1、对N型单晶碳化硅衬底进行清洗，清洗后用氮气吹干待用；
步骤2、对步骤1清洗后的N型单晶碳化硅衬底进行沉积，沉积出本征晶体锗薄膜；
步骤3、对步骤2得到的本征晶体锗薄膜再次进行沉积，沉积出P型重掺杂晶体锗薄膜；
步骤4、对步骤3得到的带有P型重掺杂晶体锗薄膜的样品利用磁控溅射设备，在N型单晶碳化硅面沉积ITO电极；
步骤5、对步骤4得到的样品利用磁控溅射设备，在P型重掺杂晶体锗薄膜上沉积ITO电极；
步骤6、使用快速退火设备对步骤5得到的样品进行退火以形成欧姆接触；
步骤7、利用网版印刷法于对步骤6得到的样品的正背面将银导线与ITO电极连接形成引出电极。
其中，步骤1中清洗流程为：使用清洗液-丙酮-酒精-去离子水逐步对样品进行清洗。
步骤2中沉积时利用化学气相沉积设备，用氢气作为载气，将反应腔加热至500℃，通入锗烷作为生长源气体，生长温度控制为700℃-900℃，生长时间控制为0.2-3小时，锗烷流量控制为0.1-100毫升/分。
步骤3中沉积时使用化学气相沉积设备，用氢气作为载气，将反应腔加热至500℃，通入锗烷作为生长源气体，通入硼烷作为掺杂源，生长温度控制为700℃-900℃，锗烷流量控制为0.1-100毫升/分，硼烷流量控制为0.1-10毫升/分，生长时间控制为0.2-3小时。
步骤4中沉积时间控制为0.1-2小时，沉积压强为控制为0.1-10Pa，溅射功率控制为100-500瓦。
步骤5中沉积时间控制为0.1-2小时，沉积压强控制为0.1-10Pa,溅射功率控制为100-500瓦。
步骤6中退火温度控制为800℃-1100℃，退火时间控制为60秒-600秒。
本发明的工作原理如下：
利用晶体锗在单晶碳化硅上面的沉积成膜搭配，形成PIN异质结结构，解决碳化硅器件的近红外光控问题，使碳化硅器件能被常用的近红外通信光源控制。在SiC衬底上沉积锗是希望利用锗较窄的禁带宽度，从而吸收可见光和近红外光。当光射入半导体中，当光的能量大于半导体的禁带宽度时，光会被价带中的电子吸收跃迁到导带，形成一对电子空穴对。当光入射到pn结的耗尽层时，产生的电子空穴对会被pn结的内建电场拉到耗尽层两侧，分别在pn结的两边形成空穴和电子的积累，从而形成光生电势，当把pn结两端短接，会有从p型半导体流出，经过导线，流入n型半导体的电流，即光生电流。与Si材料相比，Ge材料具有更窄的禁带宽度(Si：1.12eV，Ge：0.66eV)，更高的载流子迁移率(300K时，电子迁移率为3900cm/V·s)和更低的生长温度[14]。Ge材料更窄的禁带宽度可使SiC/Ge异质结的响应波长向红外方向移动，实现对近红外光，特别是对1.31μm和1.55μm波段的高响应。众所周知，1.31μm波长附近其色散为零，而1.55μm波长附近其损耗值达到了极小值0.2dB/km，是最重要的两个光通信波段，而SiC/Ge异质结的长波限约为1.9μm，理论上完全能够实现其响应。本发明首先提出了在碳化硅衬底上外延锗单晶薄膜来形成PIN结构，充分利用Ge材料的高迁移率特性，使器件具备较高的响应速度，使用低压气相化学沉积法在SiC衬底外延Ge薄膜，6H-SiC衬底经过清洗处理后放入低压气相化学沉积设备内，将反应室抽真空，真空度为10-3Pa，然后升温到1050℃左右进行高温氢气清洗，通入H2用于刻蚀衬底表面氧化物及增大表面能的作用。接着降温到工艺所需温度700℃～900℃进行Ge的外延生长，此时生长源气为GeH4和H2混合气体,其中H2是作为载气通入其中的，生长条件为：压力440Pa，时间90min，温度800℃～900℃。然后对生长好的样品利用磁控溅射设备，先在N型单晶碳化硅衬底上沉积ITO电极，后在P型晶体锗薄膜表面上沉积ITO电极。使用快速退火设备对ITO电极进行退火以形成欧姆接触。最后用网版印刷法于正背面将银导线与ITO电极连接形成引出电极。
本发明的测试结果分析如下：
测试结果表明该异质结具有较好的整流特性，当开启电压为-1V时，在非紫外光照强度为0.6W/cm2时，该结构具有很好的光响应特性，此时最大开启电压Voc为92.0mV，光电流Iph为0.6mA/cm2。该工艺能够制备输出较大光电流，高响应速度的光控SiC/Ge异质结光电二极管，借以触发SiC功率器件，满足光控SiC器件的设计要求。
本发明的其他一些特点是，在常规的光电器件中，为了能使入射光更好地到达有源吸收区，迎光面金属电极常被制作为叉指状电极结构，但由于金属电极的遮光效应，势必降低光电器件的量子效率。为了达到即透光又导电的目的，本发明提出了透明电极加以改进，在我们所研究的ITO/P-Ge/I-Ge/n-SiC器件应用中，入射光的一部分在器件表面被反射掉，在有源层中被吸收部分的大小又取决于材料的吸收系数和厚度。入射到吸收区中的光子所产生的光生载流子通过耗尽层的内电场漂移，再通过扩散最后被收集，成为外电路中流过的光电流。
Claims (8)
1.一种碳化硅基PIN结构近红外光电二极管，其特征在于，具体结构为：包括二极管两端的电极(1)，两电极(1)之间依次设置有P型晶体锗薄膜(2)、I型晶体锗薄膜(3)和N型单晶碳化硅衬底(4)。
2.一种碳化硅基PIN结构近红外光电二极管的制备方法，其特征在于，具体按照以下步骤实施：
步骤1、对N型单晶碳化硅衬底进行清洗，清洗后用氮气吹干待用；
步骤2、对所述步骤1清洗后的N型单晶碳化硅衬底进行沉积，沉积出本征晶体锗薄膜；
步骤3、对所述步骤2得到的本征晶体锗薄膜再次进行沉积，沉积出P型重掺杂晶体锗薄膜；
步骤4、对所述步骤3得到的带有P型重掺杂晶体锗薄膜的样品利用磁控溅射设备，在N型单晶碳化硅面沉积ITO电极；
步骤5、对所述步骤4得到的样品利用磁控溅射设备，在P型重掺杂晶体锗薄膜上沉积ITO电极；
步骤6、使用快速退火设备对所述步骤5得到的样品进行退火以形成欧姆接触；
步骤7、利用网版印刷法于所述步骤6得到的样品的正背面将银导线与ITO电极连接形成引出电极。
3.根据权利要求2所述的一种碳化硅基PIN结构近红外光电二极管的制备方法，其特征在于，所述步骤1中清洗流程为：使用清洗液-丙酮-酒精-去离子水逐步对样品进行清洗。
4.根据权利要求2所述的一种碳化硅基PIN结构近红外光电二极管的制备方法，其特征在于，所述步骤2中沉积时利用化学气相沉积设备，用氢气作为载气，将反应腔加热至500℃，通入锗烷作为生长源气体，生长温度控制为700℃-900℃，生长时间控制为0.2-3小时，锗烷流量控制为0.1-100毫升/分。
5.根据权利要求2所述的一种碳化硅基PIN结构近红外光电二极管的制备方法，其特征在于，所述步骤3中沉积时使用化学气相沉积设备，用氢气作为载气，将反应腔加热至500℃，通入锗烷作为生长源气体，通入硼烷作为掺杂源，生长温度控制为700℃-900℃，锗烷流量控制为0.1-100毫升/分，硼烷流量控制为0.1-10毫升/分，生长时间控制为0.2-3小时。
6.根据权利要求2所述的一种碳化硅基PIN结构近红外光电二极管的制备方法，其特征在于，所述步骤4中沉积时间控制为0.1-2小时，沉积压强为控制为0.1-10Pa，溅射功率控制为100-500瓦。
7.根据权利要求2所述的一种碳化硅基PIN结构近红外光电二极管的制备方法，其特征在于，所述步骤5中沉积时间控制为0.1-2小时，沉积压强控制为0.1-10Pa,溅射功率控制为100-500瓦。
8.根据权利要求2所述的一种碳化硅基PIN结构近红外光电二极管的制备方法，其特征在于，所述步骤6中退火温度控制为800℃-1100℃，退火时间控制为60秒-600秒。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610378283.2A CN106057929B (zh) | 2016-05-31 | 2016-05-31 | 一种碳化硅基pin结构近红外光电二极管及其制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610378283.2A CN106057929B (zh) | 2016-05-31 | 2016-05-31 | 一种碳化硅基pin结构近红外光电二极管及其制备方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106057929A true CN106057929A (zh) | 2016-10-26 |
| CN106057929B CN106057929B (zh) | 2018-03-23 |
Family
ID=57173075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610378283.2A Active CN106057929B (zh) | 2016-05-31 | 2016-05-31 | 一种碳化硅基pin结构近红外光电二极管及其制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106057929B (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107579129A (zh) * | 2017-09-04 | 2018-01-12 | 西安工程大学 | 一种碳化硅/晶体‑锗/石墨烯异质结光电器件及其制造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS599859A (ja) * | 1982-07-07 | 1984-01-19 | Hitachi Maxell Ltd | 固体電解質電池 |
| JPS59139556A (ja) * | 1983-01-28 | 1984-08-10 | Hitachi Maxell Ltd | 固体電解質電池用正極合剤の製造法 |
| GB2135510A (en) * | 1982-12-23 | 1984-08-30 | Semiconductor Energy Lab | Photoelectric conversion devices |
| CN1800445A (zh) * | 2005-11-17 | 2006-07-12 | 南京大学 | 化学气相淀积生长掺碳硅锗合金缓冲层及生长锗薄膜方法 |
| CN104465676A (zh) * | 2014-12-09 | 2015-03-25 | 厦门大学 | 4H-SiC PIN紫外光电二极管一维阵列芯片及其制备方法 |
-
2016
- 2016-05-31 CN CN201610378283.2A patent/CN106057929B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS599859A (ja) * | 1982-07-07 | 1984-01-19 | Hitachi Maxell Ltd | 固体電解質電池 |
| GB2135510A (en) * | 1982-12-23 | 1984-08-30 | Semiconductor Energy Lab | Photoelectric conversion devices |
| JPS59139556A (ja) * | 1983-01-28 | 1984-08-10 | Hitachi Maxell Ltd | 固体電解質電池用正極合剤の製造法 |
| CN1800445A (zh) * | 2005-11-17 | 2006-07-12 | 南京大学 | 化学气相淀积生长掺碳硅锗合金缓冲层及生长锗薄膜方法 |
| CN104465676A (zh) * | 2014-12-09 | 2015-03-25 | 厦门大学 | 4H-SiC PIN紫外光电二极管一维阵列芯片及其制备方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107579129A (zh) * | 2017-09-04 | 2018-01-12 | 西安工程大学 | 一种碳化硅/晶体‑锗/石墨烯异质结光电器件及其制造方法 |
| CN107579129B (zh) * | 2017-09-04 | 2019-03-26 | 西安工程大学 | 一种碳化硅/晶体-锗/石墨烯异质结光电器件及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106057929B (zh) | 2018-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Xu et al. | ZnO-based photodetector: from photon detector to pyro-phototronic effect enhanced detector | |
| KR100976454B1 (ko) | 태양 전지 및 이의 제조 방법 | |
| KR100974226B1 (ko) | 유전체를 이용한 태양전지의 후면 반사막 및 패시베이션층형성 | |
| US20110139231A1 (en) | Back junction solar cell with selective front surface field | |
| US20100282310A1 (en) | Electromagnetic emission converter | |
| CN107403848B (zh) | 一种背照式级联倍增雪崩光电二极管 | |
| KR20020010584A (ko) | 알루미늄 합금이 후면 접합된 태양 전지와 그것의 제조 방법 | |
| KR20100075467A (ko) | Ⅳ족 나노입자 접합 및 이로부터 형성된 장치 | |
| KR20100049724A (ko) | 스크린 인쇄법을 이용한 실리콘 태양전지 및 그 제조방법 | |
| KR20080045598A (ko) | 태양전지 및 그의 제조방법 | |
| US20100037946A1 (en) | Solar Cell Element and Method for Manufacturing Solar Cell Element | |
| CN101887930A (zh) | 一种室温下高光电响应硅探测器的制备方法 | |
| CN105720197A (zh) | 一种自驱动宽光谱响应硅基杂化异质结光电传感器及其制备方法 | |
| Nakada et al. | Cu (In1-x, Gax) Se2-based thin film solar cells using transparent conducting back contacts | |
| CN111952384B (zh) | 光电探测器及其制备方法 | |
| CN106057929B (zh) | 一种碳化硅基pin结构近红外光电二极管及其制备方法 | |
| Mukherjee et al. | Doped Cu 2 O/n-Si Heterojunction Solar Cell | |
| CN111863981A (zh) | 一种氧化镓日盲光电探测器及其制备方法 | |
| CN108281496A (zh) | 一种硅基PiN紫外光电二极管及其制备方法 | |
| US20170040484A1 (en) | Multi-junction solar cell | |
| CN108155267B (zh) | 一种基于肖特基-mos混合结构的光致负阻器件 | |
| KR101322628B1 (ko) | 태양전지의 후면반사막 형성방법, 이를 포함하는후면전극부 형성방법 및 태양전지의 제조방법 | |
| KR102404592B1 (ko) | 금속산화물 무기 투명태양전지 및 이의 제조방법 | |
| Mohamed et al. | Infrared response and quantum efficiency of In-doped silicon (n) structure | |
| CN117219689B (zh) | 通过掺杂提升MXene异质结光电探测器性能的方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230928 Address after: Room 21211, Building 4, Phase 2, Yicuiyuan, No. 11 Tangyan South Road, Zhangba Street Office, High tech Zone, Xi'an City, Shaanxi Province, 710065 Patentee after: Xi'an Qianyue Electronic Technology Co.,Ltd. Address before: 710048 No. 19 Jinhua South Road, Shaanxi, Xi'an Patentee before: XI'AN POLYTECHNIC University |
|
| TR01 | Transfer of patent right |