CN106057723A - Microcomponent transfer method and device, and electronic equipment - Google Patents
Microcomponent transfer method and device, and electronic equipment Download PDFInfo
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- CN106057723A CN106057723A CN201610672723.5A CN201610672723A CN106057723A CN 106057723 A CN106057723 A CN 106057723A CN 201610672723 A CN201610672723 A CN 201610672723A CN 106057723 A CN106057723 A CN 106057723A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Abstract
The invention discloses a microcomponent transfer method and device, and electronic equipment. The method comprises the steps: putting at least one microcomponents on a first substrate; enabling a transfer head made of a biomimetic gecko material to face and contact with the microcomponents, and absorbing the microcomponents through the adhesive capability of the biomimetic gecko material, so as to extract the needed microcomponents; enabling the transfer head to face a second substrate, and desorbing the microcomponents through the desorption capability of the biomimetic gecko material, so as to release the needed microcomponents on the second substrate.
Description
Technical field
The present invention relates to the microcomponent for display, more particularly, to a kind of transfer method for microcomponent, one
Microcomponent device and a kind of electronic equipment comprising microcomponent device.
Background technology
Microcomponent technology refers on substrate with superintegrated minute sized element arrays.At present, micro-spacing is sent out
Optical diode (Micro LED) technology is increasingly becoming research hot topic, and industrial quarters expects that the microcomponent product having high-quality enters city
?.The tradition display product of such as LCD/OLED existing on market can be produced deep by high-quality micro-spacing light emitting diode product
Carve impact.
During manufacturing microcomponent, on donor substrate, first form microcomponent, then transfer to connect by microcomponent
Receive on substrate.Receive substrate e.g. display screen.Be manufacturing a difficulty during microcomponent: how by microcomponent from
Transfer on donor substrate receive on substrate.
Microcomponent is turned from transfer base substrate by the method for tradition transfer microcomponent for engaging (Wafer Bonding) by substrate
Move to receive substrate.The one of which implementation of transfer method is directly transfer, namely directly by microcomponent array rotation
Move substrate to be bonded to receive substrate, the most again transfer base substrate is removed.Another kind of implementation is indirect transfer.The method comprises
The step of twice joint/stripping, first, transfer base substrate extracts microcomponent array from donor substrate, and then transfer base substrate is again by micro-
Element arrays is bonded to receive substrate, transfer base substrate is removed the most again.Wherein, extract microcomponent array typically to be picked up by electrostatic
The mode taken performs.Need to use transfer head array during electrostatic picks up.The structure of transfer head array is relative complex,
And need to consider its reliability.Manufacture transfer head array and need extra cost.Before utilizing the pickup of transfer head array
Need to produce phase change.It addition, in the manufacture process using transfer head array, microcomponent is for the heat budget of phase change
It is restricted, typically smaller than 350 DEG C, or more specifically, less than 200 DEG C；Otherwise, the performance of microcomponent can deteriorate.
Summary of the invention
For the problems referred to above, the present invention proposes the transfer method of a kind of microcomponent, device and electronic equipment.
According to the first aspect of the invention, the transfer method of a kind of microcomponent, it is characterised in that: turning of described microcomponent
Shifting method comprises step:
(1) at least one microcomponent is placed on the first substrate；
(2) use the transposition head that is made of bionic gecko material, towards and contact described microcomponent, by bionic gecko material
Adhesive capacity adsorb described microcomponent, with extract needed for microcomponent；And
(3) transposition head is towards a second substrate, is desorbed described microcomponent, to discharge by the desorption ability of bionic gecko material
The microcomponent needed is on described second substrate.
Preferably, the quantity of described microcomponent is multiple, and wherein described for part microcomponent is only adsorbed by step (2), to carry
Take required microcomponent.
Preferably, the quantity of described microcomponent is multiple, and wherein described for part microcomponent is only desorbed by step (3), to release
Put required microcomponent.
Preferably, described transposition head surface includes micro-nano compound firm fluff structures.
Preferably, described desorption is by changing the angle realization of firm fluff structures and microcomponent.
Preferably, described firm fluff structures exceedes, with the angle of microcomponent, the minimum critical angle being desorbed.
Preferably, described transposition head has scope in its surface is 1 × 105To 1 × 1014The every cm of individual projection2Projection
Density.
Preferably, described bionic gecko material selection silicone rubber or polyurethane or polyester resin or polyimides or artificial
Rubber or epoxy resin or polydimethylsiloxane or polyurethane and PETP or polymethyl methacrylate or
Multi-walled carbon nano-tubes or aforementioned combination in any.
Preferably, described first substrate is growth substrate or bearing substrate.
Preferably, described microcomponent is not yet to carry out the wafer of wafer dicing processes or light emitting diode or laser two
Pole is managed.
Preferably, described second substrate is active component array base board or passive device array base palte.
According to the second aspect of the invention, it is provided that the microcomponent that a kind of transfer method used according to the present invention manufactures
Device.
According to the third aspect of the present invention, it is provided that a kind of electronic equipment, the microcomponent device according to the present invention is comprised.
Although it addition, it will be appreciated by those skilled in the art that and prior art exists many problems, but, the present invention's
The technical scheme of each embodiment or claim can only improve at one or several aspect, existing without solving simultaneously
The whole technical problems having in technology or list in background technology.It will be appreciated by those skilled in the art that for a right
The content do not mentioned in requirement should not be taken as the restriction for this claim.
Accompanying drawing explanation
Accompanying drawing is for providing a further understanding of the present invention, and constitutes a part for description, with the reality of the present invention
Execute example together for explaining the present invention, be not intended that limitation of the present invention.Additionally, accompanying drawing data be describe summary, be not by
Ratio is drawn.
Fig. 1 is the flow chart of a kind of microcomponent device manufacture method implemented according to the present invention.
Fig. 2 ~ Fig. 8 is the process schematic of a kind of microcomponent device manufacture method according to the embodiment of the present invention 1, Qi Zhongtu
5 is the SEM figure of the firm fluff structures of Fig. 4 301.
Fig. 9 is the intermediate steps schematic diagram of the another kind of microcomponent device manufacture method according to the embodiment of the present invention 2.
Figure 10 ~ 12 show for the decline display screen of spacing RGB LED chip of two-dimensional array that has according to the embodiment of the present invention 3
Being intended to, wherein Figure 11 is the partial LED chip enlarged diagram of Figure 10, and Figure 12 is the LED chip cross-sectional schematic of Figure 11.
Figure 13 ~ 15 decline the display of spacing RGB LED chip for having two-dimensional array according to the making of the embodiment of the present invention 3
The processing step schematic diagram of screen.
Figure indicates: 100: first substrate；200: microcomponent；201: chip region；220: Cutting Road district；300: transposition head；
301: just fluff structures；400: second substrate.
Detailed description of the invention
The various exemplary embodiments of the present invention are described in detail now with reference to accompanying drawing.It should also be noted that unless additionally have
Body illustrates, the parts illustrated the most in these embodiments and positioned opposite, the numerical expression of step and numerical value are not intended to this
The scope of invention.
Description only actually at least one exemplary embodiment is illustrative below, never as to the present invention
And any restriction applied or use.
May be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable
In the case of when, described technology, method and apparatus should be considered a part for description.
Embodiment 1
Fig. 1 shows the transfer method of a kind of microcomponent, and it mainly includes processing step S100 ~ S300, below in conjunction with Fig. 2 ~ 8
Illustrate.
As shown in Figure 2, it is provided that a first substrate 100, this substrate can be growth substrate or bearing substrate, the present embodiment
Preferably bearing substrate, the material of bearing substrate can be glass, silicon, Merlon (Polycarbonate, PC), acrylic nitrile-butadiene two
Alkene-styrene (Acrylonitrile Butadiene Styrene, ABS) or its combination in any.It should be appreciated that above institute
The detailed description of the invention of the bearing substrate lifted is only and illustrates, and is not used to limit the present invention, has in the technical field of the invention
Usually intellectual, depending on being actually needed, should select the detailed description of the invention of first substrate 100 flexibly.First substrate 100 is put
Putting several microcomponents 200, microcomponent can be not yet to carry out wafer or the light emitting diode of wafer dicing processes or swash
Optical diode, the preferred microcomponent of the present embodiment is thin-film led (Thin Light-emitting Diode), and thickness can
It is about 0.5 μm to about 100 μm.The shape of microcomponent 200 can be cylinder, and cylindrical radius can be about 0.5 μm to about 500
μm, but be not limited to this, microcomponent 200 can also be triangulo column, cube, cuboid, hexagonal cylinder, anistree cylinder or
Other polygonal cylinders.
As shown in Figure 3, it is provided that a transposition head 300, bionic gecko material is used to be made, towards being positioned on first substrate
Microcomponent 200.Bionic gecko material can select silicone rubber or polyurethane or polyester resin or polyimides or artificial rubber
Glue or epoxy resin or polydimethylsiloxane or polyurethane and PETP or polymethyl methacrylate or many
Wall carbon nano tube or aforementioned combination in any.
As shown in Figure 4, transposition head 300 contacts the microcomponent 200 being positioned on first substrate, puts on precompression, such as 80 ~
100nN.The surface of transposition head 300 includes that micro-nano compound firm fluff structures 301(is as shown in Figure 5), it is such as that there is scope
It is 1 × 105To 1 × 1014The every cm of individual projection2Projection density.The firm fluff structures being made by bionic gecko material connects
Touch microcomponent surface and produce Van der Waals force, there is adhesive attraction, thus adsorb microcomponent, to extract required microcomponent 200, such as figure
Shown in 6.Just the surface of fluff structures preferably has hydrophobicity, can stop the formation of water layer on contact surface, reduce as much as possible
May acting on of capillary force, to reducing gap, it is provided that Van der Waals force plays an important role.Microcomponent can the most all carry
Take, it is also possible to the most only extracting section.It is possible to further extracting section qualified microcomponent transfer, stay remaining not
Qualified microcomponent；Defective microcomponent can also be extracted, and leave qualified microcomponent on the first substrate, so can promote micro-
Yield in element transfer process.
As shown in Figure 7, it is provided that a second substrate 400, transposition head 300 is towards this second substrate 400.Second substrate is as connecing
Receive substrate, vehicle glass, sheet glass, all flexible membranes if any circuit of flexible electronic substrate, display backplane, the sun can be selected
Energy glass, metal, polymer, polymer complex, and glass fibre.
As shown in Figure 8, be desorbed microcomponent 200 by the desorption ability of bionic gecko material, with the required microcomponent of release in
On second substrate 400.Transposition head 300 discharges the desorption process of microcomponent 200 can be by the sliding of certain distance (such as 5 ~ 10 μ
M), change the angle realization of firm fluff structures and microcomponent, preferably angle α and exceed minimum critical angle (the different materials being desorbed
Material marginal value is different, and the present embodiment is as a example by 30 °) easily produce desorption.Second substrate 400 can be active cell array base
Plate or passive device array base palte, in the present embodiment, preferably active component array base board, therefore second substrate 400 is with micro-
Element 200 will form active display panels, but be not limited to this.Second substrate 400 and microcomponent 200 can also form luminous dress
Put.Microcomponent can the most all discharge, it is also possible to part release as required.It is possible to further part discharge qualified
Microcomponent, leaves remaining defective microcomponent；Defective microcomponent can also be discharged, and stay qualified micro-on the first substrate
Element, so can promote the yield in microcomponent transfer process.
The device using the microcomponent transfer method of the present embodiment to make, can be widely applied in electronic equipment, this electronics
Equipment can be mobile phone, panel computer etc..
Embodiment 2
As it is shown in figure 9, as different from Example 1, the microcomponent described in embodiment 1 obtains for having carried out wafer dicing processes
Light emitting diode, and the microcomponent 200 of the present embodiment is the wafer not yet carrying out wafer dicing processes, and this wafer includes chip
District 210 and Cutting Road district 220.The firm fluff structures of transposition head owing to being made by bionic gecko material has for microcomponent
Having strong adsorption, therefore transposition head is without being fabricated to the size or the shape that match with wafer, such that it is able to fully
Play the adaptability of transposition head 300, without special processing and fabricating.
Embodiment 3
As shown in Figure 10, as a example by the manufactured size display screen as 138.1mm*67mm, it has 1334 × 750 two-dimensional arraies
Spacing RGB that declines three-primary color LED chip, wherein the horizontal live width (X) of LED chip is 103 μm, and longitudinal live width (Y) is 89 μm,
The lateral dimension (X) of LED chip is 93 μm, and longitudinal size (Y) is 80 μm, and horizontal spacing (X) is 10 μm, and longitudinal pitch (Y) is 9
μm；The lateral dimension (X) of horizontal live width (the X)=LED chip of LED chip+horizontal spacing (X)；The horizontal live width of LED chip
(Y) lateral dimension (Y) of=LED chip+horizontal spacing (Y).
As shown in Figure 11 ~ 12, two-dimensional array decline spacing RGB three-primary color LED chip upper surface by transparency electrode (as
ITO) as wire, it is achieved each LED chip is electrically connected with, it is to avoid extinction or shading phenomenon；The following table of RGB three-primary color LED chip
Face can arrange ITO or sapphire (Al2O3) or metal (Metal).
Above-mentioned array declines the manufacture method of space distance LED display screen, comprises the following steps that:
As shown in figure 13, it is provided that be respectively provided with the blue diaphragm of R-LED, G-LED, B-LED chip, this indigo plant diaphragm is not required to expand film, makees
For first substrate, it is used for carrying LED chip；And provide a reception substrate, as second substrate.
As shown in figure 14, step (a): by high-resolution die sorter, use bionic gecko material to be made
Transposition head, towards and contact there is the blue diaphragm of R-LED chip, adsorb R-LED by the adhesive capacity of bionic gecko material
Chip, thus capture a continuous print R-LED chip string, and it is desorbed R-LED chip string by the desorption ability of bionic gecko material,
Thus R-LED chip string is discharged to second substrate (reception substrate), i.e. realize required R-LED chip string and turn from first substrate
Move on second substrate, then skipping in case of having defective chip, meeting, until capturing, the R-LED that continuous print photoelectric parameter is qualified
Chip string；Step (b): by high-resolution die sorter, use the transposition head that bionic gecko material is made, towards
And contact the blue diaphragm with G-LED chip, adsorb G-LED chip by the adhesive capacity of bionic gecko material, thus capture
One continuous print G-LED chip string, and it is desorbed G-LED chip string by the desorption ability of bionic gecko material, thus by G-LED core
Sheet string discharges to second substrate (reception substrate), i.e. realizes required G-LED chip string and is transferred to second substrate from first substrate
On, then skipping in case of having defective chip, meeting, until capturing, the G-LED chip string that continuous print photoelectric parameter is qualified；Step
C (): by high-resolution die sorter, uses the transposition head that bionic gecko material is made, towards and contact have
The blue diaphragm of B-LED chip, adsorbs B-LED chip by the adhesive capacity of bionic gecko material, thus captures a continuous print B-
LED chip string, and it is desorbed B-LED chip string by the desorption ability of bionic gecko material, thus B-LED chip string is discharged extremely
Second substrate (reception substrate), i.e. realizes required B-LED chip string and is transferred to second substrate from first substrate, in case of having
The chip of defect is then skipped, and meets, until capturing, the B-LED chip string that continuous print photoelectric parameter is qualified.
As shown in figure 15, step (a) ~ (c) is repeated several times, until LED chip string is covered with second substrate (reception substrate)；
R-LED, G-LED, B-LED chip string arranged adjacent successively, and by transparency electrode (ITO) as being electrically connected with wire, thus
Prepared array declines spacing light emitting diode (Micro LED) display device.
Further, the number of the LED chip string every time captured can regard the size of display device, LED chip size
Size is adjusted, and the present embodiment is preferred with crawl 50 ~ 60 every time.
The present embodiment passes through high-resolution die sorter, and uses selective area transfer technique (Selective
Area Bonding), the chip on first substrate (blue diaphragm) is transferred to second substrate (reception substrate) with whole string form, speed
Degree is fast, low cost, and precision is high (error≤2 μm)；Additionally due to first substrate (blue diaphragm) need not expand film, transfer efficiency is high.
The microcomponent transfer method that the present invention provides, during producing device, using light emitting diode as infinitesimal
As a example by part, can only shift once, make single color LED, it is also possible to transfer repeatedly, such as makes the mixing of RGB three primary colours
Send the light emitting diode of white light, it is adaptable to the electronic equipments such as display screen component (such as embodiment 3).
Although having been described above the exemplary embodiment of the present invention, it is understood that, the present invention should not necessarily be limited by these examples
Property embodiment but those skilled in the art can be in the spirit and scope of the present invention as required by claims below
Inside carry out variations and modifications.
Claims (13)
1. the transfer method of a microcomponent, it is characterised in that: the transfer method of described microcomponent comprises step:
(1) at least one microcomponent is placed on the first substrate；
(2) use the transposition head that is made of bionic gecko material, towards and contact described microcomponent, by bionic gecko material
Adhesive capacity adsorb described microcomponent, with extract needed for microcomponent；And
(3) transposition head is towards a second substrate, is desorbed described microcomponent, to discharge by the desorption ability of bionic gecko material
The microcomponent needed is on described second substrate.
The transfer method of a kind of microcomponent the most according to claim 1, it is characterised in that: the quantity of described microcomponent is many
Individual, wherein described for part microcomponent is only adsorbed by step (2), the microcomponent needed for extracting.
The transfer method of a kind of microcomponent the most according to claim 1, it is characterised in that: the quantity of described microcomponent is many
Individual, wherein described for part microcomponent is only desorbed by step (3), the microcomponent needed for release.
The transfer method of a kind of microcomponent the most according to claim 1, it is characterised in that: described transposition head surface includes micro-
Nano combined firm fluff structures.
The transfer method of a kind of microcomponent the most according to claim 4, it is characterised in that: described desorption is by changing firm floss
Hair knot structure realizes with the angle of microcomponent.
The transfer method of a kind of microcomponent the most according to claim 5, it is characterised in that: described firm fluff structures and infinitesimal
The angle of part exceedes the minimum critical angle being desorbed.
The transfer method of a kind of microcomponent the most according to claim 1, it is characterised in that: described transposition head is in its surface
Having scope is 1 × 105To 1 × 1014The every cm of individual projection2Projection density.
The transfer method of a kind of microcomponent the most according to claim 1, it is characterised in that: described bionic gecko material selection
Silicone rubber or polyurethane or polyester resin or polyimides or lactoprene or epoxy resin or polydimethylsiloxane or poly-
Urethane and PETP or polymethyl methacrylate or multi-walled carbon nano-tubes or aforementioned combination in any.
The transfer method of a kind of microcomponent the most according to claim 1, it is characterised in that: described first substrate is growth base
Plate or bearing substrate.
The transfer method of a kind of microcomponent the most according to claim 1, it is characterised in that: described microcomponent is for not yet to enter
The wafer of row wafer dicing processes or light emitting diode or laser diode.
The transfer method of 11. a kind of microcomponents according to claim 1, it is characterised in that: described second substrate is actively
Component array baseplate or passive device array base palte.
12. 1 kinds use the microcomponent device manufactured according to the transfer method described in claim 1 ~ 11.
13. 1 kinds of electronic equipments, comprise microcomponent device according to claim 12.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610672723.5A CN106057723A (en) | 2016-08-16 | 2016-08-16 | Microcomponent transfer method and device, and electronic equipment |
| PCT/CN2016/104866 WO2018032621A1 (en) | 2016-08-16 | 2016-11-07 | Micro component transfer method and apparatus, and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610672723.5A CN106057723A (en) | 2016-08-16 | 2016-08-16 | Microcomponent transfer method and device, and electronic equipment |
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| CN106057723A true CN106057723A (en) | 2016-10-26 |
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| CN201610672723.5A Pending CN106057723A (en) | 2016-08-16 | 2016-08-16 | Microcomponent transfer method and device, and electronic equipment |
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| WO (1) | WO2018032621A1 (en) |
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| CN106601657A (en) * | 2016-12-12 | 2017-04-26 | 厦门市三安光电科技有限公司 | Transfer system and transfer method of microelements, manufacturing method, device and electronic device |
| CN106992230A (en) * | 2017-04-28 | 2017-07-28 | 京东方科技集团股份有限公司 | A kind of LED particulates printing transferring method |
| WO2018032621A1 (en) * | 2016-08-16 | 2018-02-22 | 厦门市三安光电科技有限公司 | Micro component transfer method and apparatus, and electronic device |
| CN108192559A (en) * | 2017-11-24 | 2018-06-22 | 南京航空航天大学 | Dry pasting material of bionic fiber for extreme environment and its preparation method and application |
| WO2018152867A1 (en) * | 2017-02-21 | 2018-08-30 | 深圳市华星光电技术有限公司 | Transfer printing template, and transfer printing device for micro light emitting diodes |
| CN108470698A (en) * | 2018-03-27 | 2018-08-31 | 唐人制造（宁波）有限公司 | A kind of workpiece alignment mounting device and its method |
| WO2019018988A1 (en) * | 2017-07-24 | 2019-01-31 | Goertek.Inc | A micro-led display device and a manufacturing method thereof |
| US10211363B2 (en) | 2017-02-21 | 2019-02-19 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Transfer printing template and transfer printing device of micro light-emitting diode |
| CN109390267A (en) * | 2017-08-09 | 2019-02-26 | 创新服务股份有限公司 | The method and device thereof of batch transfer fine element |
| CN110021237A (en) * | 2018-09-17 | 2019-07-16 | 东莞市中晶半导体科技有限公司 | A kind of MICRO LED chip produces the method for being transferred to panel from wafer |
| CN110136594A (en) * | 2017-06-19 | 2019-08-16 | 友达光电股份有限公司 | Display panel |
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