CN112687601B - Transfer method of micro-element - Google Patents
Transfer method of micro-element Download PDFInfo
- Publication number
- CN112687601B CN112687601B CN201910989196.4A CN201910989196A CN112687601B CN 112687601 B CN112687601 B CN 112687601B CN 201910989196 A CN201910989196 A CN 201910989196A CN 112687601 B CN112687601 B CN 112687601B
- Authority
- CN
- China
- Prior art keywords
- micro
- layer
- growth substrate
- component
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention relates to the technical field of display panels and discloses a micro-element transfer method. The transfer method comprises the following steps: providing a growth substrate, wherein a plurality of micro elements are formed on the growth substrate, the micro elements are divided into a plurality of mutually independent micro element groups, each micro element group comprises at least two micro elements, a connecting layer is arranged between every two adjacent micro elements, and the connecting layer and one side surface of each micro element are both contacted with the growth substrate; attaching and fixing the temporary substrate on the other side surfaces of the plurality of micro-components, and removing the growth substrate; picking up the micro-element group by using a transfer head, and transferring the micro-element group from the temporary substrate to a receiving substrate; wherein when the transfer head picks up the micro-component group, the transfer head simultaneously contacts the micro-components in the micro-component group and one side surface of the connection layer. By the mode, the transfer efficiency and the yield of the micro-component can be improved.
Description
Technical Field
The invention relates to the technical field of display panels, in particular to a micro-element transfer method.
Background
A Light Emitting Diode (LED) is a photoelectric semiconductor element, has the advantages of low power consumption, small size, high brightness, easy matching with an integrated circuit, high reliability, and the like, and is widely used as a Light source. As LED technology has matured, LED displays or Micro LED (Micro light emitting diode) displays that directly utilize LEDs as self-luminous display point pixels have also become widely used.
The Micro LED display screen integrates the technical characteristics of a TFT-LCD and an LED display screen, and the display principle is that the LED structure design is subjected to thinning, microminiaturization and arraying, then the Micro LED is peeled from an initial growth substrate and transferred to a receiving substrate.
However, in the transfer process of the Micro LEDs, since the size of a single Micro LED is small, the contact area between the Micro LED and the temporary substrate and the transfer head is small, which affects the pickup yield, and at the same time, the Micro LED is easy to shift, so that the transfer efficiency and yield of the current Micro LED are low.
Disclosure of Invention
In view of the above, the present invention provides a method for transferring a micro device, which can improve the transfer efficiency and yield of the micro device.
In order to solve the technical problems, the invention adopts a technical scheme that: a method for transferring a micro-component is provided. The transfer method comprises the following steps: providing a growth substrate, wherein a plurality of micro elements are formed on the growth substrate, the micro elements are divided into a plurality of mutually independent micro element groups, each micro element group comprises at least two micro elements, a connecting layer is arranged between every two adjacent micro elements, and the connecting layer and one side surface of each micro element are both contacted with the growth substrate; attaching and fixing the temporary substrate on the other side surfaces of the plurality of micro-components, and removing the growth substrate; picking up the micro-element group by using a transfer head, and transferring the micro-element group from the temporary substrate to a receiving substrate; wherein when the transfer head picks up the micro-component group, the transfer head simultaneously contacts the micro-components in the micro-component group and one side surface of the connection layer.
In an embodiment of the invention, when the temporary substrate is attached and fixed to the other side surfaces of the plurality of micro devices, a gap exists between a surface of the connection layer departing from the growth substrate and the temporary substrate.
In an embodiment of the invention, the micro device includes a first semiconductor layer, and the first semiconductor layer is attached to the growth substrate when the micro device is located on the growth substrate, wherein the connection layer and the first semiconductor layer are disposed on the same layer.
In an embodiment of the present invention, the step of providing a growth substrate includes: forming a light-emitting epitaxial layer on a growth substrate to form a plurality of micro-elements; the light-emitting epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially stacked along the direction away from the growth substrate, a first groove and a second groove are formed in the light-emitting epitaxial layer, the first groove extends to the growth substrate from the second semiconductor layer to divide the light-emitting epitaxial layer into a plurality of micro-element groups, the second groove extends to the first semiconductor layer from the second semiconductor layer to further divide the plurality of micro-element groups into at least two micro-elements, and the first semiconductor layer at the bottom of the second groove serves as a connecting layer.
In an embodiment of the invention, a thickness of the connection layer is smaller than a thickness of the first semiconductor layer.
In an embodiment of the present invention, the step of picking up the micro-component group by the transfer head and transferring the micro-component group onto the receiving substrate comprises: and removing the connecting layer.
In an embodiment of the present invention, the step of removing the connection layer includes: etching only the connection layer to remove the connection layer; or simultaneously etching the connecting layer and the first semiconductor layer to remove the connecting layer and the first semiconductor layer with the same thickness as the connecting layer.
In an embodiment of the invention, the micro-components in each micro-component group are used as different sub-pixels of the same pixel unit.
In an embodiment of the present invention, the original colors of the micro-components are the same.
In an embodiment of the present invention, the step of picking up the micro-component group by the transfer head and transferring the micro-component group onto the receiving substrate comprises: wavelength conversion layers of different colors are formed on different micro-elements in the micro-element group to convert the luminous colors of the micro-elements from the original luminous colors thereof to corresponding target luminous colors.
The invention has the beneficial effects that: the invention provides a transfer method of a micro-component, which is different from the prior art. The micro-components on the growth substrate are divided into a plurality of mutually independent micro-component groups, each micro-component group comprises at least two micro-components, a connecting layer is arranged between every two adjacent micro-components, and the connecting layer and one side surface of each micro-component are both in contact with the growth substrate. And attaching and fixing the temporary substrate and the micro-components, removing the growth substrate, and then simultaneously contacting the surfaces of the micro-components and the connecting layers in the micro-component group, which are previously contacted with the growth substrate, by the transfer head when the micro-component group is picked up by the transfer head. Due to the existence of the connecting layer, the contact area between the transfer head and the micro-component group is increased, so that the pickup yield of the transfer head is improved, and the transfer efficiency and the yield of the micro-components can be improved; moreover, the contact area between the transfer head and the micro-component group is increased, so that the risk of tilting of the micro-component in the process of picking up the micro-component by pressing down the transfer head can be reduced, the micro-component displacement is avoided, and the transfer efficiency and the yield of the micro-component are further improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention. Moreover, the drawings and the description are not intended to limit the scope of the inventive concept in any way, but rather to illustrate it by those skilled in the art with reference to specific embodiments.
FIG. 1 is a schematic flow chart of an embodiment of a method for transferring a micro-component according to the present invention;
FIG. 2 is a schematic flow chart of another embodiment of the transfer method of the micro-component according to the present invention;
FIG. 3 is a schematic structural diagram of a growth substrate according to an embodiment of the invention;
FIG. 4 is a schematic top view of the growth substrate shown in FIG. 3;
FIG. 5 is a schematic structural diagram of an embodiment of a docking manner of a growth substrate and a temporary substrate according to the present invention;
FIG. 6 is a schematic structural diagram of one embodiment of a docking manner of the temporary substrate and the transfer head according to the present invention;
FIG. 7 is a schematic diagram of an embodiment of a process for removing a connection layer according to the present invention;
FIG. 8 is a schematic structural diagram of an embodiment of a receiving substrate and micro devices thereon.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
Referring to fig. 1, fig. 1 is a schematic flow chart illustrating a transfer method of a micro device according to an embodiment of the present invention. It is understood that the method for transferring the micro-components set forth in the present embodiment is not limited to the following steps.
S101: providing a growth substrate;
in this embodiment, the Micro element may be a semiconductor device such as a Micro LED, which is applied to manufacture a Micro LED display panel. The growth substrate is generally a sapphire substrate, a plurality of micro-components are formed on the sapphire substrate, the micro-components are divided into a plurality of mutually independent micro-component groups, each micro-component group comprises at least two micro-components, a connecting layer is arranged between every two adjacent micro-components, and the connecting layer and one side surface of each micro-component are both in contact with the growth substrate.
S102: attaching and fixing the temporary substrate on the other side surfaces of the plurality of micro-components, and removing the growth substrate;
in this embodiment, the temporary substrate is attached and fixed to the other side surfaces of the plurality of microcomponents, so that the microcomponents are temporarily carried by the temporary substrate in the stripping process of the microcomponents and the growth substrate, and then the microcomponents and the growth substrate can be stripped by laser and the like, and the growth substrate is removed.
S103: picking up the micro-element group by using a transfer head, and transferring the micro-element group from the temporary substrate to a receiving substrate;
in this embodiment, after the growth substrate is removed, the micro devices are loaded on the temporary substrate, and then picked up by the transfer head in units of micro device groups and transferred to the receiving substrate to further fabricate the display panel.
Wherein when the transfer head picks up the group of microcomponents, the transfer head simultaneously contacts the surface of the group of microcomponents in which both the microcomponents and the connection layer were previously in contact with the growth substrate. Due to the existence of the connecting layer, the contact area between the transfer head and the micro-component group is increased, so that the picking yield of the transfer head is improved, and the transfer efficiency and the yield of the micro-component can be improved; moreover, the contact area between the transfer head and the micro-component group is increased, so that the risk of tilting of the micro-component in the process of picking up the micro-component by pressing down the transfer head can be reduced, the micro-component displacement is avoided, and the transfer efficiency and the yield of the micro-component are further improved.
In the conventional transfer process of the micro device, the temporary substrate and the transfer head are usually bonded to the micro device by using a temporary bonding method, such as a PDMS (Polydimethylsiloxane) transfer head, or a temporary bonding glue is coated on the temporary substrate. Due to the small size of the micro-component, the contact area between the micro-component and the transfer head is small, and the pick-up yield of the transfer head is low. And when the transfer head picks up the micro-component from the temporary substrate, the contact area between the micro-component and the temporary bonding glue on the temporary substrate is also very small, so that the micro-component is easy to tilt in the process of pushing down the micro-component to pick up by the transfer head, the micro-component is shifted after being transferred onto the transfer head, the actual position of the micro-component deviates from the theoretical position, and adverse effects can be caused on the subsequent process of bonding the micro-component to the receiving substrate.
The principle of adhesion of a transfer head to pick up a micro-component from a temporary substrate is generally analyzed below.
Let the adhesion between the transfer head and the individual microcomponents be F 1 The contact area between the transfer head and the individual microcomponents is S 1 The adhesion strength per unit area between the transfer head and the individual microcomponents is A 1 Adhesion between the temporary substrate and the individual microcomponents is F 2 The contact area between the temporary substrate and the individual microcomponents is S 2 The adhesion strength per unit area between the temporary substrate and the individual microcomponents is A 2 。
Then Δ F ═ F 1 -F 2 ＝S 1 *A 1 -S 2 *A 2 ；
Wherein the adhesion strength per unit area A between the transfer head and the individual microcomponents is determined after the materials of the transfer head and the temporary substrate have been determined 1 And the adhesion strength per unit area A between the temporary substrate and the individual microcomponents 2 I.e. constant, and the contact area S between the transfer head and the single microcomponents 1 With the contact area S between the temporary substrate and the individual microcomponents 2 Are substantially identical (considered identical herein).
It will be understood that the greater Δ F, the higher the yield of picking up the microcomponents from the temporary substrate by the transfer head, and that, in combination with the above formula, it is evident that Δ F can be increased by increasing the contact area. Since the size of the micro-components is fixed, the transfer head of the present embodiment picks up the micro-components in units of micro-component groups, and adds a connection layer equivalent to increasing the contact area of a single micro-component and the transfer head.
Further, since the transfer head picks up the micro-component from the surface of the micro-component previously contacting the growth substrate, in this embodiment, when the temporary substrate is attached and fixed to the other side surface of the plurality of micro-components, the surface of the connection layer facing away from the growth substrate is spaced from the temporary substrate, so that when the transfer head picks up the micro-component group, the surface of the connection layer and the micro-component previously contacting the growth substrate faces the transfer head, so that the transfer head simultaneously contacts the connection layer and the surface of the micro-component previously contacting the growth substrate, which means that the contact area between the transfer head and the micro-component group is larger than that between the temporary substrate and the micro-component group, so that the adhesion between the transfer head and the micro-component group is larger, which is beneficial for the transfer head to successfully pick up the micro-component group.
As can be seen from the above, the present invention provides a method for transferring microcomponents, which, when the group of microcomponents is picked up by the transfer head, simultaneously contacts the surface of the group of microcomponents in which both the microcomponents and the connection layer were previously in contact with the growth substrate. Due to the existence of the connecting layer, the contact area between the transfer head and the micro-component group is increased, so that the pickup yield of the transfer head is improved, and the transfer efficiency and the yield of the micro-components can be improved; moreover, the contact area between the transfer head and the micro-component group is increased, so that the risk of tilting of the micro-component in the process of picking up the micro-component by pressing down the transfer head can be reduced, the micro-component displacement is avoided, and the transfer efficiency and the yield of the micro-component are further improved.
Referring to fig. 2, fig. 2 is a schematic flow chart of another embodiment of a transfer method of micro-devices according to the present invention. It is understood that the method for transferring the micro-components set forth in the present embodiment is not limited to the following steps.
S201: forming a light-emitting epitaxial layer on a growth substrate to form a plurality of micro-elements;
please refer to fig. 3-4. In the present embodiment, a plurality of micro-components 31 are formed on the growth substrate 1, the plurality of micro-components 31 are divided into a plurality of micro-component groups 3 independent of each other, each micro-component group 3 includes at least two micro-components 31, a connection layer 4 is disposed between adjacent micro-components 31, and one side surfaces of the connection layer 4 and the micro-components 31 are both in contact with the growth substrate 1.
Further, the micro component 31 includes the first semiconductor layer 21. The first semiconductor layer 21 is used to further form an electrode structure for driving the micro-component 31 to emit light, and may be a P-type semiconductor or an N-type semiconductor, and a specific material may be gallium nitride or the like. When the micro-component 31 is located on the growth substrate 1, the first semiconductor layer 21 is attached to the growth substrate 1, and the connection layer 4 and the first semiconductor layer 21 are disposed on the same layer, so that the transfer head 5 can simultaneously contact the connection layer 4 and the first semiconductor layer 21 when picking up the micro-component 31, thereby increasing the contact area between the transfer head 5 and the micro-component group 3, and further improving the transfer efficiency and yield of the micro-component 31.
Specifically, a light-emitting epitaxial layer 2 is formed on a growth substrate 1. The light-emitting epitaxial layer 2 includes a first semiconductor layer 21, a light-emitting layer 22, and a second semiconductor layer 23, which are sequentially stacked in a direction away from the growth substrate 1. The second semiconductor layer 23 and the first semiconductor layer 21 may be made of the same material and are also used to further form an electrode structure for driving the micro-component 31 to emit light, but the semiconductor type is opposite to that of the first semiconductor layer 21, i.e. the first semiconductor layer 21 is a P-type semiconductor, then the second semiconductor layer 23 is an N-type semiconductor, whereas the first semiconductor layer 21 is an N-type semiconductor and the second semiconductor layer 23 is a P-type semiconductor.
The light-emitting layer 22 is a layer structure that actually emits light, and when a voltage is applied to the first semiconductor layer 21 and the second semiconductor layer 23, holes and electrons transferred by the two are paired in the light-emitting layer 22 to release energy, and the released energy is absorbed by the light-emitting layer 22, so that the light-emitting layer 22 emits light. The light emitting layer 22 may be a quantum well layer, and the like, and is not limited herein.
A first trench 24 and a second trench 25 are formed in the light emitting epitaxial layer 2. The first trenches 24 extend from the second semiconductor layer 23 to the growth substrate 1 to divide the light emitting epitaxial layer 2 into a number of micro element groups 3. The second trenches 25 extend from the second semiconductor layer 23 to the first semiconductor layer 21 to further divide the sets of microcomponents 3 into the above-mentioned at least two microcomponents 31. Wherein the first semiconductor layer 21 at the bottom of the second trench 25 acts as the connection layer 4.
S202: attaching and fixing the temporary substrate on the other side surfaces of the plurality of micro-components, and removing the growth substrate;
please refer to fig. 5. In this embodiment, the temporary substrate 7 is attached and fixed on the other side surface of the plurality of microcomponents 31, so that the microcomponents 31 are temporarily carried by the temporary substrate 7 in the peeling process of the microcomponents 31 and the growth substrate 1, and then the microcomponents 31 and the growth substrate 1 can be peeled off by laser peeling or the like, and the growth substrate 1 is removed.
And, when the temporary substrate 7 is attached to the above-mentioned other side surface of the plurality of microcomponents 31, the surface of the connection layer 4 facing away from the growth substrate 1 is spaced from the temporary substrate 7 so that when the group 3 of microcomponents is picked up by the transfer head 5, the surface of the connection layer 4 and the microcomponents 31 previously in contact with the growth substrate 1 faces the transfer head 5, so that the transfer head 5 simultaneously contacts the surfaces of the connection layer 4 and the microcomponents 31 previously in contact with the growth substrate 1, as shown in fig. 6. This means that the contact area of the transfer head 5 with the micro-component group 3 is greater than the contact area of the temporary substrate 7 with the micro-component group 3, so that the adhesion between the transfer head 5 and the micro-component group 3 is greater, facilitating the successful pick-up of the micro-component group 3 by the transfer head 5.
S203: picking up the micro-element group by using a transfer head, and transferring the micro-element group from the temporary substrate to a receiving substrate;
please refer to fig. 5-8. In the present embodiment, after the growth substrate 1 is removed, the micro-components 31 are carried on the temporary substrate 7, and then picked up by the transfer head 5 in units of micro-component groups 3 and transferred onto the receiving substrate 6 to further fabricate the display panel. The transfer head 5 can pick up one or more groups of micro-elements 3 at a time, without limitation.
S204: removing the connecting layer;
please continue to refer to fig. 7. In this embodiment, the connecting layer 4 needs to be removed to ensure that the respective light emission controls of the micro-components 31 in the micro-component group 3 are independent of each other and do not interfere with each other after being transferred to the receiving substrate 6. In combination with the above, since the connection layer 4 of the present embodiment multiplexes the first semiconductor layer 21 of the micro-component 31, the doped first semiconductor layer 21 has conductivity, and if the connection is not removed, it will inevitably cause interference in the light emission control of each micro-component 31 in the micro-component group 3.
Specifically, the process of removing the connection layer 4 may be directly etching to remove the connection layer 4 using optical exposure and dry etching. In this case, the above-mentioned optical exposure and dry etching may be performed only on the connection layer 4 to avoid affecting the integrity of the first semiconductor layer 21 of the micro-component 31 portion.
In an alternative embodiment, the process of removing the connection layer 4 may also be to simultaneously etch the connection layer 4 and the first semiconductor layer 21 (for example, the above-mentioned optical exposure and dry etching, etc.) to remove the first semiconductor layer 21 having the same thickness as the connection layer 4 at the same time as removing the connection layer 4. In this way, the design of the mask can be simplified, the mask regions of the mask corresponding to the first semiconductor layer 21 and the connection layer 4 of the micro-component 31 can be designed to have the same transmittance, and even the mask can be allowed not to be used, so as to reduce the production cost.
Further, the thickness of the connection layer 4 may be smaller than that of the first semiconductor layer 21. Therefore, in the process of removing the connection layer 4, only the connection layer 4 with a smaller thickness needs to be etched, so that the time consumption of the process can be reduced and the production cost can be reduced.
It should be noted that the thickness of the connection layer 4 should be designed to be not less than the sum of the thickness of the connection layer 4 consumed by the laser lift-off and the thickness necessary to maintain the micro-components 31 in the micro-component group 3 as a whole. In this way, after undergoing the lift-off process of the microcomponents 31 and the growth substrate 1, the remaining connecting layer 4 still functions to connect adjacent microcomponents 31, so as to increase the contact area between the microcomponent group 3 and the transfer head 5.
S205: forming wavelength conversion layers of different colors on different micro-elements in the micro-element group;
please continue to refer to fig. 8. In the present embodiment, the micro-components 31 in each micro-component group 3 are used as different sub-pixels of the same pixel unit, the micro-components 31 in the micro-component group 3 can constitute a complete pixel unit, and the emission colors of the micro-components 31 in the micro-component group 3 can constitute corresponding emission colors as required, so that the pixel unit constituted by the micro-components 31 emits light as required.
In order to make the luminescent colors of the micro-components 31 in the micro-component group 3 to form corresponding luminescent colors as required, wavelength conversion is required to be performed on the luminescent colors of the micro-components 31, so that different micro-components 31 in the micro-component group 3 emit light with different colors, and thus form corresponding luminescent colors as required.
Specifically, wavelength conversion layers 311 of different colors are formed on different micro-components 31 in the micro-component group 3 to convert the luminescent colors of the micro-components 31 from their original luminescent colors to corresponding target luminescent colors, so that the different micro-components 31 in the micro-component group 3 emit light of different colors to compose corresponding luminescent colors as required.
For example, the micro-component group 3 may include three micro-components 31, as shown in fig. 8, and the original luminescent color of each micro-component 31 may be blue. By forming the wavelength conversion layers 311 with different colors, such as green, red and transparent wavelength conversion layers 311, specifically quantum dot conversion films, etc., on the different micro-elements 31, the micro-elements 31 in the micro-element group 3 finally exhibit three different luminescent colors of red, green and blue, thereby forming corresponding luminescent colors.
In summary, the present invention provides a method for transferring micro-components, in which when the micro-component group is picked up by the transfer head, the transfer head simultaneously contacts the surface of the micro-component in the micro-component group and the surface of the connection layer previously contacted with the growth substrate. Due to the existence of the connecting layer, the contact area between the transfer head and the micro-component group is increased, so that the picking yield of the transfer head is improved, and the transfer efficiency and the yield of the micro-component can be improved; moreover, the contact area between the transfer head and the micro-component group is increased, so that the risk of tilting of the micro-component in the process of picking up the micro-component by pressing the transfer head down can be reduced, the micro-component displacement is avoided, and the transfer efficiency and the yield of the micro-component are further improved.
In addition, in the present invention, unless otherwise expressly specified or limited, the terms "connected," "stacked," and the like are to be construed broadly, e.g., as meaning permanently connected, detachably connected, or integrally formed; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A method for transferring a micro-component, the method comprising:
providing a growth substrate, wherein a plurality of micro elements are formed on the growth substrate, the micro elements are divided into a plurality of micro element groups which are independent from each other, each micro element group comprises at least two micro elements, a connecting layer is arranged between the adjacent micro elements, and the connecting layer and one side surface of each micro element are both in contact with the growth substrate;
attaching and fixing a temporary substrate on the other side surfaces of the plurality of micro-components, and removing the growth substrate;
picking up the micro-element group by using a transfer head, and transferring the micro-element group from the temporary substrate to a receiving substrate; wherein when the transfer head picks up the micro-component group, the transfer head simultaneously contacts the micro-components in the micro-component group and the one-side surface of the connection layer.
2. The transfer method according to claim 1, wherein when the temporary substrate is attached to the other side surface of the plurality of microcomponents, a gap exists between a surface of the connection layer facing away from the growth substrate and the temporary substrate.
3. The transfer method according to claim 2, wherein the micro-component comprises a first semiconductor layer, the first semiconductor layer is attached to the growth substrate when the micro-component is located on the growth substrate, and the connection layer and the first semiconductor layer are disposed on the same layer.
4. The transfer method according to claim 3, wherein the step of providing a growth substrate comprises:
forming a light-emitting epitaxial layer on the growth substrate to further form the plurality of micro-components;
the light-emitting epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially stacked along the direction far away from the growth substrate, a first groove and a second groove are formed in the light-emitting epitaxial layer, the first groove extends from the second semiconductor layer to the growth substrate so as to divide the light-emitting epitaxial layer into a plurality of micro-element groups, the second groove extends from the second semiconductor layer to the first semiconductor layer so as to further divide the plurality of micro-element groups into at least two micro-elements, and the first semiconductor layer at the bottom of the second groove serves as the connecting layer.
5. The transfer method according to claim 3 or 4, wherein a thickness of the connection layer is smaller than a thickness of the first semiconductor layer.
6. The transfer method according to claim 5, wherein the step of picking up the group of micro-elements with the transfer head and transferring onto a receiving substrate is followed by:
and removing the connecting layer.
7. The transfer method according to claim 6,
the step of removing the connection layer comprises:
etching only the connection layer to remove the connection layer; or
And simultaneously etching the connecting layer and the first semiconductor layer to remove the first semiconductor layer with the same thickness as the connecting layer while removing the connecting layer.
8. The transfer method according to claim 1, wherein the micro-elements in each of the micro-element groups are used for different sub-pixels as a same pixel unit.
9. The transfer method of claim 8 wherein the original color of illumination of each of said microelements is the same.
10. The transfer method according to claim 9, wherein the step of picking up the group of micro-elements with the transfer head and transferring onto the receiving substrate is followed by:
wavelength conversion layers of different colors are formed on different micro-elements in the micro-element group so as to convert the luminous color of the micro-elements from the original luminous color to the corresponding target luminous color.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910989196.4A CN112687601B (en) | 2019-10-17 | 2019-10-17 | Transfer method of micro-element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910989196.4A CN112687601B (en) | 2019-10-17 | 2019-10-17 | Transfer method of micro-element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112687601A CN112687601A (en) | 2021-04-20 |
| CN112687601B true CN112687601B (en) | 2022-08-26 |
Family
ID=75444557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910989196.4A Active CN112687601B (en) | 2019-10-17 | 2019-10-17 | Transfer method of micro-element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112687601B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057723A (en) * | 2016-08-16 | 2016-10-26 | 厦门市三安光电科技有限公司 | Microcomponent transfer method and device, and electronic equipment |
| CN108695412A (en) * | 2017-04-10 | 2018-10-23 | 英属开曼群岛商錼创科技股份有限公司 | The method for transmitting micro component |
| CN109192821A (en) * | 2018-08-31 | 2019-01-11 | 华灿光电（浙江）有限公司 | Transfer method, transfer base substrate and the light emitting diode matrix of light-emitting diode chip for backlight unit |
| CN109390437A (en) * | 2017-08-08 | 2019-02-26 | 英属开曼群岛商錼创科技股份有限公司 | Micro-led device and preparation method thereof |
-
2019
- 2019-10-17 CN CN201910989196.4A patent/CN112687601B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057723A (en) * | 2016-08-16 | 2016-10-26 | 厦门市三安光电科技有限公司 | Microcomponent transfer method and device, and electronic equipment |
| CN108695412A (en) * | 2017-04-10 | 2018-10-23 | 英属开曼群岛商錼创科技股份有限公司 | The method for transmitting micro component |
| CN109390437A (en) * | 2017-08-08 | 2019-02-26 | 英属开曼群岛商錼创科技股份有限公司 | Micro-led device and preparation method thereof |
| CN109192821A (en) * | 2018-08-31 | 2019-01-11 | 华灿光电（浙江）有限公司 | Transfer method, transfer base substrate and the light emitting diode matrix of light-emitting diode chip for backlight unit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112687601A (en) | 2021-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI742256B (en) | Direct-bonded led arrays and applications | |
| EP3079171B1 (en) | Transfer system comprising a transfer head of semiconductor light emitting device, and method of transferring semiconductor light emitting device | |
| CN109390437B (en) | Micro light-emitting diode device and manufacturing method thereof | |
| EP3926680A1 (en) | Method for transferring light-emitting diodes for display, and display device | |
| CN110246953B (en) | Micro-LED chip, display equipment and manufacturing method of Micro-LED chip | |
| TWI689092B (en) | Micro led display module having light transmissive substrate and manufacturing method thereof | |
| US20230117219A1 (en) | Method for manufacturing display device using semiconductor light-emitting elements and display device | |
| TWI627740B (en) | Micro led display module and manufacturing method thereof | |
| US11810809B2 (en) | Method for transferring micro light emitting diodes | |
| CN110610931A (en) | Multi-color Micro LED partitioned batch preparation method | |
| CN113380929B (en) | Display panel manufacturing method, display panel and display device | |
| WO2021148895A1 (en) | Light processing device array and method for manufacturing thereof | |
| TWI611573B (en) | Micro led display module and manufacturing method thereof | |
| CN110676355B (en) | Method for manufacturing light-emitting element | |
| CN111354757A (en) | Method for manufacturing an optoelectronic structure provided with coplanar light emitting diodes | |
| CN110289234B (en) | Mass transfer method for light emitting unit, array substrate and display device | |
| KR20190112916A (en) | Display apparatus and method for manufacturing thereof | |
| CN112687601B (en) | Transfer method of micro-element | |
| CN117276304A (en) | Micro light-emitting diode display device and preparation method thereof | |
| CN116885076A (en) | Light-emitting diode device, manufacturing method thereof and display device | |
| CN109285855B (en) | Display device and method for manufacturing the same | |
| KR20210004767A (en) | Layout structure between substrate, micro LED array and micro vacuum module for micro LED array transfer using micro vacuum module and Method for manufacturing micro LED display using the same | |
| CN113764326B (en) | Micro light emitting diode and transfer device and transfer method thereof | |
| KR101777610B1 (en) | Transfer head of the semiconductor light emitting device, and method for transferring the semiconductor light emitting device | |
| KR20230031909A (en) | light emitting array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |