CN113192868A - Large-scale transferring device and method for microelectronic components - Google Patents
Large-scale transferring device and method for microelectronic components Download PDFInfo
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- CN113192868A CN113192868A CN202110469441.6A CN202110469441A CN113192868A CN 113192868 A CN113192868 A CN 113192868A CN 202110469441 A CN202110469441 A CN 202110469441A CN 113192868 A CN113192868 A CN 113192868A
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- 238000004377 microelectronic Methods 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 57
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 57
- -1 polydimethylsiloxane Polymers 0.000 claims description 57
- 239000002313 adhesive film Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 239000003085 diluting agent Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical compound CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 claims description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 3
- 229920002873 Polyethylenimine Polymers 0.000 claims description 3
- 238000007865 diluting Methods 0.000 claims description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 229920000058 polyacrylate Polymers 0.000 claims description 3
- 229920002689 polyvinyl acetate Polymers 0.000 claims description 3
- 239000011118 polyvinyl acetate Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 239000008096 xylene Substances 0.000 claims description 3
- 238000012163 sequencing technique Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 239000011295 pitch Substances 0.000 description 3
- 238000005411 Van der Waals force Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2383/04—Polysiloxanes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
The invention provides a large-scale transferring device and a transferring method of microelectronic components, wherein the transferring device comprises a supporting platform, a Y-axis linear motion platform and a Z-axis linear motion platform are arranged on the supporting platform, a transferring head is arranged on the Z-axis linear motion platform, a viscous film for bonding the microelectronic components is arranged on the transferring head, an initial platform and a target platform are arranged on the supporting platform, and a receiving substrate with a circuit structure is arranged on the top surface of the target platform. The sticky film in the scheme can be formed through processes such as photoetching, the shape, the size, the arrangement mode and the arrangement interval of sticky bulges on the sticky film can be correspondingly processed and manufactured according to the specification of microelectronic devices on the source substrate plate, the sticky film can be selectively adhered with different types of microelectronic components and parts, and sequencing is arranged on the receiving substrate with the circuit structure through the Y-axis linear motion platform and the Z-axis linear motion platform.
Description
Technical Field
The invention relates to the technical field of transfer of microelectronic components, in particular to a large-scale transfer device and a transfer method of microelectronic components.
Background
In recent years, with the development of micro-electromechanical systems, some products have smaller sizes and more compact arrangements, and the conventional transfer method has not been able to meet the requirements of mass and high precision transfer, such as high-density alignment assembly of drivers and display units in Flat Panel Display (FPD) devices, LED chips, micro control systems, optoelectronic smart array sensors, etc., all require repeated precision assembly of mass microelectronic components. At present, some transfer technologies for microelectronic components, such as electrostatic force technology in precision grabbing technology, have been proposed, which use a transfer head with a bipolar structure, and apply positive and negative voltages to the transfer head during grabbing and releasing processes, respectively, to complete the transfer of the corresponding microelectronic components, but the transfer efficiency of the method is low, and the electrostatic force may damage the microelectronic components; the van der waals force technology is characterized in that the microelectronic components are adhered to the elastic transfer head by van der waals force and then placed on the target substrate, the transfer efficiency is high, the microelectronic components cannot be damaged in the transfer process, but the microelectronic components to be transferred cannot be selectively grabbed by the plane on one side of the transfer head, and sequencing arrangement cannot be performed on the microelectronic components of different types.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a large-scale transferring device and a transferring method of microelectronic components, which solve the problems that electrostatic force possibly damages the microelectronic components and different types of microelectronic components can not be sequenced and arranged on a substrate with a circuit structure in the transferring technology of the microelectronic components in the prior art.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention is as follows:
the large-scale transferring device for the microelectronic components comprises a supporting platform, wherein a Y-axis linear motion platform is arranged on the supporting platform, a Z-axis linear motion platform is movably arranged on the Y-axis linear motion platform, a transferring head is arranged at the bottom end of the Z-axis linear motion platform, a layer of adhesive film for bonding the microelectronic components is arranged on the lower surface of the transferring head, and a plurality of bonding bulges are arranged on the adhesive film;
an initial platform is arranged on the supporting platform and located below the Z-axis linear motion platform, a source substrate plate used for bearing microelectronic components is arranged on the top surface of the initial platform, a target platform is arranged on one side of the initial platform, and a receiving substrate with a circuit structure is arranged on the top surface of the target platform.
Furthermore, the transfer head is detachably connected with the bottom end of the Z-axis linear motion platform.
Furthermore, the diameters of the sticky bulges are all 1 micron-1000 microns, and the heights of the sticky bulges are 10 microns-1000 microns.
Further, the material of the adhesive film is modified polydimethylsiloxane, polyacrylate or polyvinyl acetate.
Further, the material of the adhesive film is modified polydimethylsiloxane, and the preparation method of the adhesive film comprises the following steps:
s1: determining the shape, size, arrangement mode and arrangement interval of the bumps according to the specification of the microelectronic component;
s2: transferring the convex shape, size, arrangement mode and arrangement interval of the sticking bulges onto a silicon wafer by a photoetching process to form a silicon positive film with a microstructure;
s3: transferring the microstructure on the silicon positive film to polydimethylsiloxane to form a polydimethylsiloxane negative film;
s4: diluting the modified polydimethylsiloxane by a diluent, and uniformly spraying the diluted modified polydimethylsiloxane on a polydimethylsiloxane negative film;
s5: heating the polydimethylsiloxane negative film for 20min-30min at the temperature of 90 ℃, wherein the modified polydimethylsiloxane is in a semi-solidified state;
s6: adding glass sheet on the surface of semi-solidified modified polydimethylsiloxane, heating at 90 deg.C for 10-20min until the modified polydimethylsiloxane is solidified, and taking off the solidified film from the negative film of polydimethylsiloxane to obtain viscous film containing viscous bumps.
Further, the preparation method of the modified polydimethylsiloxane comprises the following steps: uniformly stirring polydimethylsiloxane and an ethoxylated polyethyleneimine solution according to the proportion of 10g to 20-50ul, and vacuumizing to obtain modified polydimethylsiloxane;
further, the diluent is an organic solvent, and comprises n-hexane, n-hexadecane, cyclohexane, toluene, xylene or butyl acetate.
The scheme also provides a transferring method of the large-scale transferring device for the microelectronic components, which is characterized by comprising the following steps:
step 1: the Y-axis linear motion platform moves horizontally to move the transfer head above the initial platform, the transfer head is aligned with the source substrate plate, the Z-axis linear motion platform moves downwards until the sticky bulge of the sticky film on the transfer head is contacted with the microelectronic component, the Z-axis linear motion platform stops, and the microelectronic component is adhered on the sticky film;
step 2: starting the Z-axis linear motion platform, and driving the transfer head to move upwards by the Z-axis linear motion platform; the adhesive film drives the microelectronic element to separate from the source substrate plate;
and step 3: the Y-axis linear motion platform drives the transfer head and the Z-axis linear motion platform to move right above the target platform, the Z-axis linear motion platform drives the transfer head to move downwards, and the Z-axis linear motion platform stops until the microelectronic element on the viscous film is contacted with the receiving substrate with the circuit structure;
and 4, step 4: welding and fixing the microelectronic element on a receiving substrate with a circuit structure, and starting a Z-axis linear motion platform to drive a transfer head to be separated from the receiving substrate with the circuit structure after the microelectronic element is completed;
and 5: and (5) repeating the steps 1 to 4 to realize large-scale transfer and fixation of the microelectronic components from the source substrate plate to the receiving substrate with the circuit structure.
The invention has the beneficial effects that: 1. the sticky film in the scheme can be formed by processes such as photoetching, the shape, the size, the arrangement mode and the arrangement interval of the sticky bulges on the sticky film can be correspondingly processed and manufactured according to the shape, the size, the arrangement mode and the arrangement interval of microelectronic devices on the source substrate board, the sticky film can be selectively adhered with different types of microelectronic components and parts, and the sticky film is sequenced and arranged on the receiving substrate with the circuit structure through the Y-axis linear motion platform and the Z-axis linear motion platform.
2. The adhesive film in the scheme is used for adhering the microelectronic components and parts by means of self-generated adhesion force, so that the microelectronic components and parts cannot be damaged in the adhering process of the microelectronic components and parts, and the microelectronic components and parts can be transferred on a large scale without damage.
3. The main material of the viscous film in the scheme is modified polydimethylsiloxane, and the viscous film is made of the modified polydimethylsiloxane, so that the performance of the viscous film is stable, the adhesion is strong, and the viscosity of the viscous film cannot be obviously changed along with the increase of the transfer times.
4. The microelectronic component transfer device is simple in transfer process, convenient to control automatically, high in transfer efficiency, convenient to transplant on different devices and wide in application range.
Drawings
Fig. 1 is a schematic structural view of a large-scale transfer apparatus for microelectronic devices according to the present invention.
Fig. 2 is a schematic structural view of the transfer head of the present invention.
Wherein, 1, Y-axis linear motion platform; 2. a Z-axis linear motion stage; 3. a transfer head; 4. an adhesive film; 5. a receiving substrate with a circuit structure; 6. a target platform; 7. a support platform; 8. an initial platform; 9. a source substrate board; 10. a microelectronic device.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
As shown in fig. 1-2, the invention provides a large-scale transferring device for microelectronic components, which comprises a supporting platform 7, wherein a Y-axis linear motion platform is arranged on the supporting platform 7, a Z-axis linear motion platform is movably arranged on the Y-axis linear motion platform, a transferring head 3 is arranged at the bottom end of the Z-axis linear motion platform, a layer of adhesive film 4 for adhering the microelectronic components 10 is arranged on the lower surface of the transferring head 3, and a plurality of adhesive protrusions are arranged on the adhesive film 4; the diameters of the sticky bulges are all 1-1000 microns, the heights of the sticky bulges are 10-1000 microns, the sticky film 4 in the scheme has the adhesion effect on the microelectronic components 10 and depends on the self-generated adhesion force, and in the adhesion process of the microelectronic components 10, the materials are flexible, so that the microelectronic components 10 cannot be damaged, and the microelectronic components 10 can be transferred on a large scale without damage.
The transfer head 3 is detachably connected with the bottom end of the Z-axis linear motion platform. The transfer head 3 can be replaced according to the type of the microelectronic component 10 to be transferred, so that the applicability of the whole transfer device is improved.
An initial platform 8 positioned below the Z-axis linear motion platform is arranged on the supporting platform 7, a source substrate plate 9 used for bearing a microelectronic component 10 is arranged on the top surface of the initial platform 8, a target platform 6 is arranged on one side of the initial platform 8, and a receiving substrate 5 with a circuit structure is arranged on the top surface of the target platform 6.
The microelectronic components 10 in this scheme include MEMS devices, integrated circuit devices, Micro-LEDs, photovoltaic devices, nano-devices, and the like.
The shape, size, arrangement mode and arrangement pitch of the sticky bulges on the sticky film 4 can be correspondingly processed and manufactured according to the shape, size, arrangement mode and arrangement pitch of the microelectronic devices on the source substrate board 9, the sticky film 4 can be selectively adhered with different types of microelectronic components 10, and sequencing is arranged on the receiving substrate 5 with the circuit structure through the Y-axis linear motion platform and the Z-axis linear motion platform.
The material of the adhesive film 4 is modified polydimethylsiloxane, polyacrylate, polyvinyl acetate, or the like, and in this embodiment, the material of the adhesive film 4 is preferably modified polydimethylsiloxane.
The preparation method of the modified polydimethylsiloxane comprises the following steps: uniformly stirring polydimethylsiloxane and an ethoxylated polyethyleneimine solution according to the proportion of 10g to 20-50ul, and vacuumizing to obtain modified polydimethylsiloxane; the material of the adhesive film 4 is modified polydimethylsiloxane, and the preparation method of the adhesive film 4 comprises the following steps:
s1: determining the bump shape, size, arrangement mode and arrangement interval of the sticky bumps according to the specification of the microelectronic component 10;
s2: transferring the convex shape, size, arrangement mode and arrangement interval of the sticking bulges onto a silicon wafer by a photoetching process to form a silicon positive film with a microstructure;
s3: transferring the microstructure on the silicon positive film to polydimethylsiloxane to form a polydimethylsiloxane negative film; the polydimethylsiloxane negative film is equivalent to a die for manufacturing the viscous film 4;
s4: diluting the modified polydimethylsiloxane by a diluent, and uniformly spraying the diluted modified polydimethylsiloxane on a polydimethylsiloxane negative film; the diluent is organic solvent such as n-hexane, n-hexadecane, cyclohexane, toluene, xylene and butyl acetate;
s5: heating the polydimethylsiloxane negative film for 20min-30min at the temperature of 90 ℃, wherein the modified polydimethylsiloxane is in a semi-solidified state;
s6: placing a glass sheet on the surface of the semi-solidified modified polydimethylsiloxane, heating for 10-20min at the temperature of 90 ℃ until the modified polydimethylsiloxane is solidified, and taking down the solidified film from the polydimethylsiloxane negative film to obtain the viscous film 4 containing viscous bumps.
In the method, the silicon positive film can be formed by processes such as photoetching, etching and the like; the arrangement of the polydimethylsiloxane negative film is convenient for forming sticky bulges on the sticky film 4, and if the modified polydimethylsiloxane is directly sprayed on the silicon positive film, the modified polydimethylsiloxane negative film cannot be cured to form the sticky film 4 with the sticky bulges; the glass sheet is placed on the surface of the semi-solidified modified polydimethylsiloxane, so that the viscous film 4 formed after the modified polydimethylsiloxane is solidified can be conveniently taken out, the viscous film 4 can be prevented from deforming in the transfer process of the viscous film 4, and the transfer precision can be improved.
The modified polydimethylsiloxane can be uniformly covered on the polydimethylsiloxane negative film by means of dilution spraying, pouring, spin coating and the like.
The material of the viscous film 4 in the scheme is preferably modified polydimethylsiloxane, and the viscous film 4 is made of the modified polydimethylsiloxane, so that the performance of the viscous film 4 is stable, the adhesive force is strong, the viscosity of the viscous film 4 cannot be obviously changed along with the increase of the transfer times, the service life of the viscous film 4 is prolonged, and the working stability of the transfer device is improved.
The scheme also provides a transferring method of the large-scale transferring device for the microelectronic components, which is characterized by comprising the following steps:
step 1: the Y-axis linear motion platform 1 moves horizontally to move the transfer head 3 to be above the initial platform 8, the transfer head 3 is aligned with the source substrate plate 9, the Z-axis linear motion platform 2 moves downwards, until the sticky bulge of the sticky film 4 on the transfer head 3 is contacted with the microelectronic component 10, the Z-axis linear motion platform 2 stops, and the microelectronic component 10 is adhered on the sticky film 4;
step 2: starting the Z-axis linear motion platform 2, and driving the transfer head 3 to move upwards by the Z-axis linear motion platform 2; the adhesive film 4 drives the microelectronic component 10 to separate from the source substrate board 9;
and step 3: the Y-axis linear motion platform 1 drives the transfer head 3 and the Z-axis linear motion platform 2 to move right above the target platform 6, the Z-axis linear motion platform 2 drives the transfer head 3 to move downwards, and the Z-axis linear motion platform 2 stops until the microelectronic component 10 on the viscous film 4 is contacted with the receiving substrate 5 with the circuit structure;
and 4, step 4: welding and fixing the microelectronic component 10 on the receiving substrate 5 with the circuit structure, and starting the Z-axis linear motion platform 2 to drive the transfer head 3 to be separated from the receiving substrate 5 with the circuit structure after the microelectronic component 10 is finished;
and 5: and (5) repeating the steps 1 to 4 to realize the mass transfer and fixation of the microelectronic component 10 from the source substrate plate 9 to the receiving substrate 5 with the circuit structure.
Sequencing arrangement of multiple microelectronic components 10 can be achieved by picking up different types of microelectronic elements in batches by the raised structures with specific pitches and placing the microelectronic elements at specified positions on the receiving substrate 5 with circuit structures.
The microelectronic component transfer device in the scheme has the advantages of simple transfer process, convenience in automatic control and high transfer efficiency, and is convenient to transplant to different devices, so that the application range of the transfer device is widened.
Claims (8)
1. A large-scale transferring device for microelectronic components comprises a supporting platform (7), and is characterized in that a Y-axis linear motion platform is arranged on the supporting platform (7), a Z-axis linear motion platform is movably arranged on the Y-axis linear motion platform, a transferring head (3) is arranged at the bottom end of the Z-axis linear motion platform, a layer of adhesive film (4) used for bonding microelectronic components (10) is arranged on the lower surface of the transferring head (3), and a plurality of bonding bulges are arranged on the adhesive film (4);
an initial platform (8) positioned below the Z-axis linear motion platform is arranged on the supporting platform (7), a source substrate plate (9) used for bearing a microelectronic component (10) is arranged on the top surface of the initial platform (8), a target platform (6) is arranged on one side of the initial platform (8), and a receiving substrate (5) with a circuit structure is arranged on the top surface of the target platform (6).
2. The device for mass transfer of microelectronic components according to claim 1, characterized in that the transfer head (3) is detachably connected to the bottom end of the Z-axis linear motion platform.
3. A device for mass transfer of microelectronic components as claimed in claim 1, wherein the plurality of bonding bumps each have a diameter of 1 micron to 1000 microns and a height of 10 microns to 1000 microns.
4. A mass transfer device for microelectronic components according to claim 3, characterized in that the material of the adhesive film (4) is modified polydimethylsiloxane, polyacrylate or polyvinyl acetate.
5. The mass transfer device for microelectronic components as claimed in claim 1, characterized in that the material of the adhesive film (4) is modified polydimethylsiloxane, and the method for preparing the adhesive film (4) comprises:
s1: determining the bump shape, size, arrangement mode and arrangement space of the sticky bumps according to the specification of the microelectronic component (10);
s2: transferring the convex shape, size, arrangement mode and arrangement interval of the sticking bulges onto a silicon wafer by a photoetching process to form a silicon positive film with a microstructure;
s3: transferring the microstructure on the silicon negative film to polydimethylsiloxane to form a polydimethylsiloxane negative film;
s4: diluting the modified polydimethylsiloxane by a diluent, and uniformly spraying the diluted material on a polydimethylsiloxane negative film;
s5: heating the polydimethylsiloxane negative film for 20min-30min at the temperature of 90 ℃ to enable the modified polydimethylsiloxane to be in a semi-solidified state;
s6: placing a glass sheet on the surface of the semi-solidified modified polydimethylsiloxane, heating for 10-20min at the temperature of 90 ℃ until the modified polydimethylsiloxane is solidified, and taking down the solidified film from the polydimethylsiloxane negative film to obtain the viscous film (4) containing viscous bumps.
6. The device for large-scale transfer of microelectronic components according to claim 5, wherein the modified polydimethylsiloxane is prepared by the following steps: uniformly stirring polydimethylsiloxane and an ethoxylated polyethyleneimine solution according to the proportion of 10g to 20-50ul, and vacuumizing to obtain the modified polydimethylsiloxane.
7. A mass transfer device for microelectronic components as claimed in claim 5, wherein the diluent is an organic solvent comprising n-hexane, n-hexadecane, cyclohexane, toluene, xylene, or butyl acetate.
8. A method for transferring a mass transfer device of microelectronic components according to any of claims 1 to 7, characterized by comprising the steps of:
step 1: the Y-axis linear motion platform (1) moves horizontally to move the transfer head (3) to a position above the initial platform (8), the transfer head (3) is aligned with the source substrate plate (9), the Z-axis linear motion platform (2) moves downwards until the sticky bulge of the sticky film (4) on the transfer head (3) is contacted with the microelectronic component (10), the Z-axis linear motion platform (2) stops, and the microelectronic component (10) is adhered to the sticky film (4);
step 2: starting the Z-axis linear motion platform (2), and driving the transfer head (3) to move upwards by the Z-axis linear motion platform (2); the adhesive film (4) drives the microelectronic component (10) to separate from the source substrate plate (9);
and step 3: the Y-axis linear motion platform (1) drives the transfer head (3) and the Z-axis linear motion platform (2) to move right above the target platform (6), the Z-axis linear motion platform (2) drives the transfer head (3) to move downwards, and the Z-axis linear motion platform (2) stops until the microelectronic component (10) on the viscous film (4) is contacted with the receiving substrate (5) with the circuit structure;
and 4, step 4: welding and fixing the microelectronic component (10) on a receiving substrate (5) with a circuit structure, and starting the Z-axis linear motion platform (2) to drive the transfer head (3) to be separated from the receiving substrate (5) with the circuit structure after the microelectronic component (10) is finished;
and 5: and (5) repeating the steps 1 to 4 to realize the mass transfer and fixation of the microelectronic components (10) from the source substrate plate (9) to the receiving substrate (5) with the circuit structure.
Priority Applications (1)
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| CN106057723A (en) * | 2016-08-16 | 2016-10-26 | 厦门市三安光电科技有限公司 | Microcomponent transfer method and device, and electronic equipment |
| CN109941007A (en) * | 2019-03-13 | 2019-06-28 | 浙江大学 | A kind of general shape-memory polymer transfer seal and its transfer method |
| CN110603142A (en) * | 2017-09-26 | 2019-12-20 | 株式会社Lg化学 | Pattern film for transferring display pixels and method of manufacturing display using the same |
| US20200126825A1 (en) * | 2018-10-17 | 2020-04-23 | X-Celeprint Limited | Micro-transfer printing with selective component removal |
| CN111856883A (en) * | 2020-06-29 | 2020-10-30 | 南京中电熊猫液晶显示科技有限公司 | Micro device transfer head and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106057723A (en) * | 2016-08-16 | 2016-10-26 | 厦门市三安光电科技有限公司 | Microcomponent transfer method and device, and electronic equipment |
| CN110603142A (en) * | 2017-09-26 | 2019-12-20 | 株式会社Lg化学 | Pattern film for transferring display pixels and method of manufacturing display using the same |
| US20200126825A1 (en) * | 2018-10-17 | 2020-04-23 | X-Celeprint Limited | Micro-transfer printing with selective component removal |
| CN109941007A (en) * | 2019-03-13 | 2019-06-28 | 浙江大学 | A kind of general shape-memory polymer transfer seal and its transfer method |
| CN111856883A (en) * | 2020-06-29 | 2020-10-30 | 南京中电熊猫液晶显示科技有限公司 | Micro device transfer head and manufacturing method thereof |
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