CN106048288B - 高导电银基复合材料的原料配方及制备方法 - Google Patents
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 239000002131 composite material Substances 0.000 title claims abstract description 43
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 38
- 239000004332 silver Substances 0.000 title claims abstract description 38
- 239000000203 mixture Substances 0.000 title claims abstract description 17
- 239000002994 raw material Substances 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000843 powder Substances 0.000 claims abstract description 26
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 17
- 229960004643 cupric oxide Drugs 0.000 claims abstract description 15
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002270 dispersing agent Substances 0.000 claims abstract description 11
- 239000006229 carbon black Substances 0.000 claims abstract description 9
- 239000008187 granular material Substances 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 235000015895 biscuits Nutrition 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- 238000000498 ball milling Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000009694 cold isostatic pressing Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical group OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 2
- 229960003511 macrogol Drugs 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- 239000005543 nano-size silicon particle Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 9
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000011160 research Methods 0.000 abstract description 3
- 239000010970 precious metal Substances 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000013019 agitation Methods 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Chemical compound [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
本发明涉及金属基复合材料技术,旨在提供一种高导电银基复合材料的原料配方及制备方法。该原料配方是由重量百分含量计算的下述组分组成:银粉80~88%、炭黑粉体1~18%、纳米氧化铜粉体1~10%、纳米碳化钛粉体0.5~10%、分散剂0.1~2%。采用本发明方法制备获得的高导电银基复合材料,由于含有导电性能优异的增强相材料和微观导电通道,其电阻率最低可达1.9μΩ·cm,延伸率达22%以上。本发明不会对环境造成污染,工艺简单、成本较低。与现有技术中研究和使用最多的环保型银金属氧化物相比,在达到同等性能的条件下,可显著降低银的使用量,以节约贵金属资源。
Description
技术领域
本发明属于金属基复合材料技术领域,具体涉及一种高导电银基复合材料的原料配方及制备方法。
背景技术
银基复合材料具有优异的导电、导热及延展性能,广泛应用于电子元器件和装备设备,是国民经济发展的重要基础材料。在电接触和低压电器领域,银基复合材料是最主要的原材料,其性能直接决定的电接触元器件和低压电器的使用性能和寿命。
目前,银基复合材料主要有银合金、银金属氧化物、银碳化物、银石墨等。其中银氧化镉复合材料具有接触电阻低、稳定、抗熔焊等特性,可应用于从几十安到上千安电流、从几伏到上千伏电压的广泛领域,被誉为电器领域的万能触点。然而,银氧化镉的生产和使用过程中会造成环境污染,而且对生产者和使用者的健康构成极大危害。然而随着全球环境和经济格局的转变,电接触材料朝着绿色环保、长寿命、高可靠性和低成本的方向发展。而目前新开发的银氧化锡等环保型复合材料在用作电接触材料时,仍存在电阻率高、可加工性能差以及成本高等问题。因此,开发高导电、易加工且成本低的银基复合材料十分迫切。
发明内容
本发明所要解决的技术问题是,克服现有技术中的不足,提供一种高导电银基复合材料的原料配方及制备方法。该银基导电复合材料具有高电导率、高延展性和长电寿命。
为解决技术问题,本发明的解决方案是:
提供一种用于制备高导电银基复合材料的原料配方,是由重量百分含量计算的下述组分组成:银粉80~88%、炭黑粉体1~18%、纳米氧化铜粉体1~10%、纳米碳化钛粉体0.5~10%、分散剂0.1~2%。
本发明中,分散剂为聚乙二醇6000(PEG6000)。
本发明进一步提供了利用前述原料配方制备高导电银基复合材料的方法,包括下述步骤:
(1)按所述原料配方的比例关系称量各组分;
(2)在1000~1500r/min的搅拌速率下,向去离子水中加入分散剂搅拌5分钟;然后在搅拌条件下依次加入纳米氧化铜粉体和纳米碳化钛粉体,继续搅拌40分钟后获得复合料浆;再采用喷雾干燥方式,将复合料浆制备成纳米氧化铜/纳米碳化钛复合粉体,备用;
(3)将银粉、炭黑粉体和步骤(2)中的纳米氧化铜/纳米碳化钛复合粉体置于球磨机中,在500r/min的速度下球磨2~4小时,获得银基复合粉体;
(4)将银基复合粉体置于成型器中,以冷等静压法成型,获得银基复合材料素坯;然后将银基复合材料素坯置于真空烧结炉中,在氩气气氛、800~930℃条件下烧结4~8小时,获得高导电银基复合材料。
本发明中,所述纳米氧化铜粉体的粒径为30~50nm,纯度为99.99%。
本发明中,所述纳米碳化钛粉体的粒径为20~40nm,纯度为99.99%。
本发明中,所述银粉的粒径为0.5~10um,纯度为99.99%。
本发明中,所述炭黑粉体的粒径为50~200nm,纯度为99.99%。
本发明中,所述步骤(2)中,控制去离子水的加入量,使其与分散剂的重量比例为100:0.05~100:1。
本发明中,所述步骤(4)中,冷等静压压力为200MPa,温度为25℃。
与现有技术相比,本发明的有益效果在于:
1、采用本发明方法制备获得的高导电银基复合材料,由于含有导电性能优异的增强相材料和微观导电通道,其电阻率最低可达1.9μΩ·cm,延伸率达22%以上。
2、此外,本发明的制备技术不会对环境造成污染,工艺简单、成本较低。与现有技术中研究和使用最多的环保型银金属氧化物相比(氧化镉属于非环保型产品),在达到同等性能的条件下,可显著降低银的使用量,以节约贵金属资源。
具体实施方式
下面通过实例进一步对本发明进行描述。
本发明中,用于制备高导电银基复合材料的原料配方是由重量百分含量计算的下述组分组成:银粉80~88%、炭黑粉体1~18%、纳米氧化铜粉体1~10%、纳米碳化钛粉体0.5~10%、分散剂0.1~2%。
利用该原料配方制备高导电银基复合材料的方法,包括下述步骤:
(1)按所述原料配方的比例关系称量各组分;
(2)在1000~1500r/min的搅拌速率下,向去离子水中加入分散剂PEG6000搅拌5分钟;然后在搅拌条件下依次加入纳米氧化铜粉体和纳米碳化钛粉体,继续搅拌40分钟后获得复合料浆;再采用喷雾干燥方式,将复合料浆制备成纳米氧化铜/纳米碳化钛复合粉体,备用;
(3)将银粉、炭黑粉体和步骤(2)中的纳米氧化铜/纳米碳化钛复合粉体置于球磨机中,在500r/min的速度下球磨2~4小时,获得银基复合粉体;
(4)将银基复合粉体置于成型器中,以冷等静压法成型,获得银基复合材料素坯;然后将银基复合材料素坯置于真空烧结炉中,在氩气气氛、800~930℃条件下烧结4~8小时,获得高导电银基复合材料。
各实施例中的试验数据见下表(各组分的份数均为重量百分比含量):
采用本发明方法制备获得的高导电银基复合材料,其电阻率最低可达1.9μΩ·cm,延伸率达25%以上。与现有技术中银含量相同的电接触材料相比,其电阻率明显降低,延伸率明显提高。例如作为研究和使用最多的环保型银金属氧化物的一种实例,银质量分数为88%的AgSnO2,其电阻率一般为2.2~2.5μΩ·cm、延伸率为13~17%(国家标准)。
最后,还需要注意的是,以上列举的仅是本发明的具体实施例子。显然,本发明不限于以上实施例子,还可以有许多变形。本领域的普通技术人员能从本发明公开的内容直接导出或联想到的所有变形,均应认为是本发明的保护范围。
Claims (9)
1.一种用于制备高导电银基复合材料的原料配方,其特征在于,是由重量百分含量计算的下述组分组成:银粉80~88%、炭黑粉体1~18%、纳米氧化铜粉体1~10%、纳米碳化钛粉体0.5~10%、分散剂0.1~2%。
2.根据权利要求1所述原料配方,其特征在于,分散剂为聚乙二醇6000。
3.利用权利要求1所述原料配方制备高导电银基复合材料的方法,其特征在于,包括下述步骤:
(1)按所述原料配方的比例关系称量各组分;
(2)在1000~1500r/min的搅拌速率下,向去离子水中加入分散剂搅拌5分钟;然后在搅拌条件下依次加入纳米氧化铜粉体和纳米碳化钛粉体,继续搅拌40分钟后获得复合料浆;再采用喷雾干燥方式,将复合料浆制备成纳米氧化铜/纳米碳化钛复合粉体,备用;
(3)将银粉、炭黑粉体和步骤(2)中的纳米氧化铜/纳米碳化钛复合粉体置于球磨机中,在500r/min的速度下球磨2~4小时,获得银基复合粉体;
(4)将银基复合粉体置于成型器中,以冷等静压法成型,获得银基复合材料素坯;然后将银基复合材料素坯置于真空烧结炉中,在氩气气氛、800~930℃条件下烧结4~8小时,获得高导电银基复合材料。
4.根据权利要求3所述的方法,其特征在于,所述纳米氧化铜粉体的粒径为30~50nm,纯度为99.99%。
5.根据权利要求3所述的方法,其特征在于,所述纳米碳化钛粉体的粒径为20~40nm,纯度为99.99%。
6.根据权利要求3所述的方法,其特征在于,所述银粉的粒径为0.5~10um,纯度为99.99%。
7.根据权利要求3所述的方法,其特征在于,所述炭黑粉体的粒径为50~200nm,纯度为99.99%。
8.根据权利要求3所述的方法,其特征在于,所述步骤(2)中,控制去离子水的加入量,使其与分散剂的重量比例为100:0.05~100:1。
9.根据权利要求3所述的方法,其特征在于,所述步骤(4)中,冷等静压压力为200MPa,温度为25℃。
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