CN106030827B - 用于对基底上的薄层进行激光结构化来制造一体式互连的薄层太阳能电池的方法以及薄层太阳能模块的制造方法 - Google Patents
用于对基底上的薄层进行激光结构化来制造一体式互连的薄层太阳能电池的方法以及薄层太阳能模块的制造方法 Download PDFInfo
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- CN106030827B CN106030827B CN201480048072.1A CN201480048072A CN106030827B CN 106030827 B CN106030827 B CN 106030827B CN 201480048072 A CN201480048072 A CN 201480048072A CN 106030827 B CN106030827 B CN 106030827B
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Classifications
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Electromagnetism (AREA)
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- Health & Medical Sciences (AREA)
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Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013109480.5A DE102013109480A1 (de) | 2013-08-30 | 2013-08-30 | Verfahren zur Laser-Strukturierung von Dünnschichten auf einem Substrat für die Herstellung monolithisch verschalteter Dünnschichtsolarzellen und Herstellungsverfahren für ein Dünnschichtsolarmodul |
DE102013109480.5 | 2013-08-30 | ||
PCT/DE2014/100309 WO2015027997A1 (de) | 2013-08-30 | 2014-08-28 | Verfahren zur laser-strukturierung von dünnschichten auf einem substrat für die herstellung monolithisch verschalteter dünnschichtsolarzellen und herstellungsverfahren für ein dünnschichtsolarmodul |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106030827A CN106030827A (zh) | 2016-10-12 |
CN106030827B true CN106030827B (zh) | 2018-03-23 |
Family
ID=51798948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480048072.1A Active CN106030827B (zh) | 2013-08-30 | 2014-08-28 | 用于对基底上的薄层进行激光结构化来制造一体式互连的薄层太阳能电池的方法以及薄层太阳能模块的制造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20160211395A1 (zh) |
EP (1) | EP3039726A1 (zh) |
JP (1) | JP2016529724A (zh) |
KR (1) | KR101790457B1 (zh) |
CN (1) | CN106030827B (zh) |
DE (1) | DE102013109480A1 (zh) |
WO (1) | WO2015027997A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015115030A1 (de) * | 2015-09-08 | 2017-03-09 | Von Ardenne Gmbh | Verfahren zum Entfernen einer Schicht von einem Substrat und dessen Verwendung |
DE102018005010A1 (de) * | 2017-07-13 | 2019-01-17 | Wika Alexander Wiegand Se & Co. Kg | Transfer und Aufschmelzen von Schichten |
CN109273608B (zh) * | 2018-11-05 | 2021-01-19 | 武汉理工大学 | 一种半透明钙钛矿太阳能电池及其制备方法 |
CN109273607A (zh) * | 2018-11-05 | 2019-01-25 | 武汉理工大学 | 一种利用飞秒激光制备柔性大面积钙钛矿太阳能电池组件的方法 |
EP3764405A1 (en) * | 2019-07-10 | 2021-01-13 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO | Method of manufacturing a thin film photovoltaic product |
CN111463315B (zh) * | 2019-08-26 | 2021-08-20 | 杭州纤纳光电科技有限公司 | 一种太阳能电池切割钝化一体化加工方法及其太阳能电池 |
CN111341918B (zh) * | 2020-03-06 | 2022-02-01 | 电子科技大学 | 一种光电探测器阵列制备方法 |
Citations (4)
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CN1918711A (zh) * | 2003-12-25 | 2007-02-21 | 昭和壳牌石油株式会社 | 集成薄膜太阳能电池及其制造方法 |
CN102082198A (zh) * | 2010-09-30 | 2011-06-01 | 深圳市创益科技发展有限公司 | 一种高功率低电压硅基薄膜太阳能电池及其制造方法 |
JP2012114398A (ja) * | 2010-11-05 | 2012-06-14 | Kataoka Seisakusho:Kk | 薄膜太陽電池の製造方法、レーザ加工機、薄膜太陽電池製造装置 |
CN102763220A (zh) * | 2009-12-01 | 2012-10-31 | 曼兹股份公司 | 用于至少局部地除去层堆叠的层的方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8399331B2 (en) * | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
DE102008006166A1 (de) * | 2008-01-26 | 2009-07-30 | Schott Solar Gmbh | Verfahren zur Herstellung eines photovoltaischen Moduls |
US7855089B2 (en) * | 2008-09-10 | 2010-12-21 | Stion Corporation | Application specific solar cell and method for manufacture using thin film photovoltaic materials |
JP2010251428A (ja) * | 2009-04-13 | 2010-11-04 | Mitsubishi Heavy Ind Ltd | 光電変換装置の製造方法、光電変換装置の製造装置、及び光電変換装置 |
JP4773543B2 (ja) * | 2009-04-17 | 2011-09-14 | 昭和シェル石油株式会社 | エッジスペースを備えた太陽電池モジュール |
US8048706B1 (en) * | 2010-10-14 | 2011-11-01 | Miasole | Ablative scribing of solar cell structures |
US20120094425A1 (en) | 2010-10-14 | 2012-04-19 | Miasole | Ablative scribing of solar cell structures |
JP2012209346A (ja) * | 2011-03-29 | 2012-10-25 | Kyocera Corp | 光電変換モジュール |
JP5902399B2 (ja) * | 2011-04-15 | 2016-04-13 | 株式会社片岡製作所 | 薄膜太陽電池の製造方法、レーザ加工機 |
DE102011017807A1 (de) * | 2011-04-29 | 2012-10-31 | Trumpf Laser- Und Systemtechnik Gmbh | Verfahren zum laserinduzierten Entfernen von Bereichen von Schichten eines Schichtenstapels |
DE102011103481B4 (de) * | 2011-06-03 | 2017-08-17 | Leibniz-Institut für Oberflächenmodifizierung e.V. | Selektives Abtragen dünner Schichten mittels gepulster Laserstrahlung zur Dünnschichtstrukturierung |
US8642884B2 (en) * | 2011-09-09 | 2014-02-04 | International Business Machines Corporation | Heat treatment process and photovoltaic device based on said process |
CN104396015A (zh) * | 2012-05-03 | 2015-03-04 | 内克西斯公司 | 激光蚀刻薄层的堆叠用于光伏电池的连接 |
-
2013
- 2013-08-30 DE DE102013109480.5A patent/DE102013109480A1/de not_active Withdrawn
-
2014
- 2014-08-28 KR KR1020167006453A patent/KR101790457B1/ko active IP Right Grant
- 2014-08-28 WO PCT/DE2014/100309 patent/WO2015027997A1/de active Application Filing
- 2014-08-28 CN CN201480048072.1A patent/CN106030827B/zh active Active
- 2014-08-28 US US14/914,770 patent/US20160211395A1/en not_active Abandoned
- 2014-08-28 JP JP2016537133A patent/JP2016529724A/ja active Pending
- 2014-08-28 EP EP14789778.9A patent/EP3039726A1/de not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1918711A (zh) * | 2003-12-25 | 2007-02-21 | 昭和壳牌石油株式会社 | 集成薄膜太阳能电池及其制造方法 |
CN102763220A (zh) * | 2009-12-01 | 2012-10-31 | 曼兹股份公司 | 用于至少局部地除去层堆叠的层的方法 |
CN102082198A (zh) * | 2010-09-30 | 2011-06-01 | 深圳市创益科技发展有限公司 | 一种高功率低电压硅基薄膜太阳能电池及其制造方法 |
JP2012114398A (ja) * | 2010-11-05 | 2012-06-14 | Kataoka Seisakusho:Kk | 薄膜太陽電池の製造方法、レーザ加工機、薄膜太陽電池製造装置 |
Also Published As
Publication number | Publication date |
---|---|
KR101790457B1 (ko) | 2017-11-20 |
JP2016529724A (ja) | 2016-09-23 |
US20160211395A1 (en) | 2016-07-21 |
WO2015027997A1 (de) | 2015-03-05 |
EP3039726A1 (de) | 2016-07-06 |
CN106030827A (zh) | 2016-10-12 |
DE102013109480A1 (de) | 2015-03-05 |
KR20160048102A (ko) | 2016-05-03 |
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