CN106024912A - Vertical constant current device with three-terminal protection function and manufacturing method thereof - Google Patents
Vertical constant current device with three-terminal protection function and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000001052 transient effect Effects 0.000 claims abstract description 26
- 230000001629 suppression Effects 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000407 epitaxy Methods 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 238000002513 implantation Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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Abstract
The invention provides a vertical constant current device with a three-terminal protection function and a manufacturing method thereof. The device comprises two parts of a vertical constant current diode and a transient voltage suppression diode. The vertical constant current diode part comprises a metal anode, a P-type substrate, a first lightly doped N-type epitaxial layer, a first P-type region, a second heavily doped N-type epitaxial layer, a first N-type heavily doped region and a first metal cathode. The transient voltage suppression diode structure comprises a metal anode, a P-type substrate, a first lightly doped N-type epitaxial layer, a second heavily doped N-type epitaxial layer, a second P-type region, an oxide layer and a second metal cathode. The transient voltage suppression diode and the vertical constant current diode are integrated together so that the constant current diode is enabled to have the anti-surge capability, the reliability of the constant current diode and the system can be enhanced, and appropriate breakdown voltage, clamp voltage and peak pulse current of the transient voltage suppression diode can be obtained by adjusting the doping junction depth and concentration of the second P-type region.
Description
Technical field
The invention belongs to semiconductor power device technology field, be specifically related to a kind of three ends and carry the vertical-type galvanostat of safeguard function
Part and manufacture method thereof.
Background technology
Constant-current source is a kind of conventional electronic equipment and device, uses the most extensive in electronic circuit.Constant-current source is used for protecting whole
Individual circuit, even if there is spread of voltage or load resistance change situation the most greatly, can guarantee stablizing of supply current.But,
A breakdown voltage high position for current regulator diode is commonly 30～100V at present, therefore there is the problem that breakdown voltage is relatively low, can carry simultaneously
The constant current of confession is relatively low, and the current regulator diode of majority can not tackle severe external environment, is being struck by lightning, or
The big voltage that power network fluctuation produces, the situation of big electric current is easy to burn, and causes the safety of follow-up drive circuit to be also difficult to ensure,
After current regulator diode periphery is integrated with transient voltage suppressor diode (TVS, Transient Voltage Suppressor), constant current two
The Surge handling capability of pole pipe and whole drive system can be strengthened, and reliability is greatly improved.
Summary of the invention
The technical problem to be solved in the present invention is that transient voltage suppressor diode is integrated into current regulator diode periphery, forms one three
End-apparatus part carrys out drive circuit, improves Surge handling capability, has ensured the reliability of device and circuit further.
Technical scheme is as follows:
A kind of three ends carry the vertical-type constant current device of safeguard function, suppress two poles including vertical current regulative diode and transient voltage
Pipe two parts；
Described vertical current regulative diode includes first above the P type substrate above metal anode, metal anode, P type substrate
Lightly doped n type epitaxial layer, two about symmetrical the first p type island region of vertical current regulative diode portion centers, be positioned at first and gently mix
The second heavily doped N-type epitaxial layer above miscellaneous N-type epitaxy layer and between two the first p type island regions, it is arranged on the second heavy doping
First N-type heavily doped region of N-type epitaxy layer upper surface, cover the second heavily doped N-type epitaxial layer and the upper surface of the first p type island region
The first metallic cathode；Described first p type island region extends vertically through the second heavily doped N-type epitaxial layer also from the interface of silicon and silicon dioxide
Extend in the first lightly doped epitaxial layer；Described first metallic cathode is groove shape, and the groove at two ends extends to the first p type island region
In, the first N-type heavily doped region and the first metallic cathode form Ohmic contact；
Described transient voltage suppressor diode includes above the P type substrate above metal anode, metal anode, P type substrate
First lightly doped n type epitaxial layer, it is positioned at the second heavily doped N-type epitaxial layer above the first lightly doped n type epitaxial layer, is positioned at
Vertical current regulative diode portion outboard and in the second p type island region within the second heavily doped N-type epitaxial layer, to be covered in second heavily doped
The second metallic cathode that the oxide layer of miscellaneous N-type epitaxy layer upper surface, the vertical direction of oxide layer upper surface align with the second p type island region,
The second described p type island region extends vertically through the second heavily doped N-type epitaxial layer and extends to first and gently mix from the interface of silicon and silicon dioxide
In miscellaneous N-type epitaxy layer, the second described metallic cathode is groove shape, and the second metallic cathode extends vertically through oxide layer and extends to
Inside second p type island region.
It is preferred that, described vertical-type constant current device accesses the mode of LED drive circuit and is: metal anode and civil power are through whole
Outfan after stream bridge rectification is connected, and the first metallic cathode connects the input of LED string, the second metallic cathode and LED string
Outfan connects, and constitutes a transient voltage suppressor diode and current regulator diode and the series-parallel circuit of LED.
It is preferred that, the doping content of the first lightly doped n type epitaxial layer and the second heavily doped N-type epitaxial layer is identical, i.e. etc.
Imitate in single epitaxial technique；Or use repeatedly epitaxy technique to form more epitaxial layer structure.
It is preferred that, use different releases to obtain different knot in current regulator diode the first p type island region with the second p type island region
Deep and doping content.
It is preferred that, semi-conducting material used by device is silicon or carborundum.
It is preferred that, the surface of the first p type island region is provided with the 4th p-type heavily doped region, the ditch at described first metallic cathode two ends
Groove extends in the 4th p-type heavily doped region.
It is preferred that, described second surface, p type island region is provided with the 3rd p-type heavily doped region, and the second metallic cathode runs through oxide layer
And extend in the 3rd p-type heavily doped region.
The present invention also provides for the manufacture method that a kind of three described ends carry the vertical-type constant current device of safeguard function, including following step
Rapid:
Step 1: using heavily doped P-type silicon chip as substrate, surface is once epitaxially formed the first lightly doped n type thereon
Epitaxial layer；
Step 2: carry out second time extension, form the second heavily doped N-type epitaxial layer on the first lightly doped n type epitaxial layer；
Step 3: grow one layer of field oxide at the second heavily doped N-type epitaxial layer upper surface, forms electrode and field limiting ring is groove etched
Barrier layer；
Step 4: field oxide in etching window, at second heavily doped N-type epitaxial layer upper surface wet etching the first metallic cathode
With the second metallic cathode make the two extend to inside the second heavily doped N-type epitaxial layer, etch away whole silicon chip field oxygen；
Step 5: carry out pre-oxygen before the injection of the first p type island region, the second p type island region；
Step 6: carry out the first p type island region, the injection of the second p type island region, then carries out the first p type island region, the second p type island region knot,
First p type island region, the second p type island region are connected with the first metallic cathode, the second metallic cathode respectively；
Step 7: pre-oxygen before deposit, deposits pre-metal dielectric；
Step 8: ohm hole etches, deposits aluminum metal；
Step 9: etching metal, forms metallic cathode and terminal field limiting ring field plate；
Step 10: deposit passivation layer, carves PAD hole；
Step 11: heavily doped N-type silicon chip lower surface forms metal anode.
It is preferred that, described manufacture method farther includes following steps:
Step 1: using heavily doped P-type silicon chip as substrate, surface is once epitaxially formed the first lightly doped n type thereon
Epitaxial layer；
Step 2: carry out second time extension, form the second heavily doped N-type epitaxial layer on the first lightly doped n type epitaxial layer；
Step 3: grow one layer of field oxide at the second heavily doped N-type epitaxial layer upper surface, forms electrode and field limiting ring is groove etched
Barrier layer；
Step 4: field oxide in etching window, at second heavily doped N-type epitaxial layer upper surface wet etching the first metallic cathode
With the second metallic cathode make the two extend to inside the second heavily doped N-type epitaxial layer, etch away whole silicon chip field oxygen；
Step 5: before carrying out the first p type island region, the second p type island region, the 3rd p-type heavily doped region and the injection of the 4th p-type heavily doped region
Pre-oxygen；
Step 6: carry out the first p type island region, the second p type island region, the 3rd p-type heavily doped region, the injection of the 4th p-type heavily doped region,
Then carry out the first p type island region, the second p type island region knot, the 4th p-type heavily doped region, the 3rd p-type heavily doped region 171 respectively with
First metallic cathode, the second metallic cathode connect；
Step 7: pre-oxygen before deposit, deposits pre-metal dielectric；
Step 8: ohm hole etches, deposits aluminum metal；
Step 9: etching metal, forms metallic cathode and terminal field limiting ring field plate；
Step 10: deposit passivation layer, carves PAD hole；
Step 11: heavily doped N-type silicon chip lower surface forms metal anode.
It is preferred that, the resistivity of P type substrate is 0.015, and the first p type island region implantation dosage is 4 × 1015cm-2, junction depth is
8 microns；The implantation dosage of the second p type island region is 3 × 1016cm-2, junction depth is 8 microns；First lightly doped n type epitaxial layer 12
Implantation dosage is 1.2 × 1015cm-2；The implantation dosage of the second heavily doped N-type epitaxial layer 14 is 2.5 × 1015cm-2。
Beneficial effects of the present invention:
1, transient voltage suppressor diode and vertical current regulative diode are integrated by the present invention so that current regulator diode possesses
Certain Surge handling capability, enhances the reliability of current regulator diode and this system.
2, the present invention by a set of technique transient voltage suppressor diode and vertical current regulative diode be made in one silica-based on, with
External discrete transient voltage suppressor diode is compared, and area is greatly reduced.
3, the present invention can be obtained suitable transient voltage suppressed two poles by the junction depth and concentration that regulate the second p type island region doping
The breakdown voltage of pipe, clamp voltage and peak pulse current.
4, in the present invention, P type substrate constitutes a diode and integrated transient voltage suppressor diode with lightly doped n type epitaxial layer
Series connection, is reduced the electric capacity of transient voltage suppressor diode, adds by the concentration of regulation P type substrate and lightly doped n type epitaxial layer
Fast-response speed.
5, in the present invention the first p type island region can share with the second p type island region together with mask plate, junction depth is identical with doping content, so
Process costs can be saved；Can also be different with doping content with different masks, junction depth.
Accompanying drawing explanation
Fig. 1 (a), (b), (c) be respectively the device junction composition of traditional two ends vertical-type, current regulator diode graphical diagram,
The LED drive circuit figure of application；
Fig. 2 (a), (b), (c) are that three ends of the present invention carry the device junction composition of safeguard function, vertical-type constant current respectively
The graphical diagram of device, the LED drive circuit figure of application；
Fig. 3 is the forward constant current characteristic that three ends of the present invention carry the vertical-type constant current device of safeguard function；
Fig. 4 is the breakdown characteristic under the surge condition of the vertical-type constant current device that three ends of the present invention carry safeguard function；
Fig. 5 is that three ends of the present invention carry the process chart that the vertical-type constant current device of safeguard function makes；
Fig. 6 is that three ends of the present invention carry the technological process analogous diagram that the vertical-type constant current device of safeguard function makes.
In Fig. 1,01 is P type substrate, and 02 is the first lightly doped n type epitaxial layer, and 03 is the first p-type heavy doping diffusion region,
04 is the second highly doped epitaxial layer, and 06 is the first N-type heavily doped region, and 07 is the first metallic cathode, and 08 is metal anode；
In Fig. 2, Fig. 5,11 is P type substrate, and 12 is the first lightly doped n type epitaxial layer, and 13 is the first p type island region, and 14 are
Second heavily doped N-type epitaxial layer, 15 is the second p type island region, and 16 is the first N-type heavily doped region, and 18 is the first metallic cathode,
171 is the 3rd p-type heavily doped region, and 172 is the 4th p-type heavily doped region, and 19 is metal anode, and 20 is the second metallic cathode；
21 is oxide layer.
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by disclosed by this specification
Content understand other advantages and effect of the present invention easily.The present invention can also be added by the most different detailed description of the invention
To implement or application, the every details in this specification can also be based on different viewpoints and application, in the essence without departing from the present invention
Various modification or change is carried out under god.
Fig. 1 is traditional vertical current regulative diode, and Fig. 1 has 3 subgraphs (a) (b) (c) to represent two ends vertical-type respectively
Device junction composition, current regulator diode graphical diagram, the LED drive circuit figure of application；
As shown in Fig. 1 (a), traditional vertical current regulative diode device architecture includes outside P type substrate the 01, first lightly doped n type
Prolong layer the 02, first metallic cathode the 07, first N-type heavily doped region the 06, first p-type heavy doping diffusion region 03, second highly doped
N-type epitaxy layer 04, metal anode 08；Described first lightly doped n type epitaxial layer 02 is positioned on P type substrate 01, described
Second highly doped epitaxial layer 04 is positioned on the first lightly doped n type epitaxial layer 02, described first p-type heavy doping diffusion region
03 runs through the second highly doped epitaxial layer 04 and extends in the first lightly doped epitaxial layer 02, described first N-type heavy doping
District 06 is arranged on the upper surface of the second highly doped epitaxial layer 04, and it is heavily doped that described first metallic cathode 07 covers the first N-type
Miscellaneous district 06 and the first p-type heavy doping diffusion region 03, described first metallic cathode 07 is groove shape, and the groove at two ends extends to
In first p-type heavy doping diffusion region 03, described metal anode 08 is connected with P type substrate 01 lower surface, and the first N-type is heavily doped
Miscellaneous district 06 and the first metallic cathode 07 form Ohmic contact.
3 subgraphs (a) (b) (c) of Fig. 2 represent three ends of the present invention respectively and carry the vertical-type constant current device of safeguard function
Device junction composition, current regulator diode graphical diagram, the LED drive circuit figure of application, can be seen that novel three ends from reference numerals
Carrying the vertical-type constant current device of safeguard function and having more one end than traditional vertical current regulative diode is the second metallic cathode 20, this
Outward it can be seen that three ends of the present invention carry the vertical-type constant current device of safeguard function than traditional vertical-type perseverance from device architecture
Stream diode has had more the part of the transient voltage suppressor diode on the right, so the present invention includes traditional vertical-type constant current two pole
Pipe and transient voltage suppressor diode part；
Described vertical current regulative diode part includes that the P type substrate 11 above metal anode 19, metal anode 19, p-type serve as a contrast
The first lightly doped n type epitaxial layer 12, two at the end 11 is about a P of vertical current regulative diode portion centers symmetry
Type district 13, the second heavy doping N above the first lightly doped n type epitaxial layer 12 and between two the first p type island regions 13
Type epitaxial layer 14, it is arranged on the first N-type heavily doped region 16 of the second heavily doped N-type epitaxial layer 14 upper surface, covers the second weight
First metallic cathode 18 of the upper surface of doped N-type epitaxial layer 14 and the first p type island region 13；Described first p type island region 13 is from silicon
Extend vertically through the second heavily doped N-type epitaxial layer 14 with the interface of silicon dioxide and extend in the first lightly doped epitaxial layer 12；Institute
Stating the first metallic cathode 18 is groove shape, and the groove at two ends extends in the first p type island region 13, the first N-type heavily doped region 16
Ohmic contact is formed with the first metallic cathode 18；The surface of the first p type island region 13 is provided with the 4th p-type heavily doped region 172, described
The groove at the first metallic cathode 18 two ends extends in the 4th p-type heavily doped region 172.
Described transient voltage suppressor diode structure includes the P type substrate 11 above metal anode 19, metal anode 19, P
The first lightly doped n type epitaxial layer 12 above type substrate 11, it is positioned at the second weight above the first lightly doped n type epitaxial layer 12
Doped N-type epitaxial layer 14, it is positioned at vertical current regulative diode portion outboard and within the second heavily doped N-type epitaxial layer 14
Second p type island region 15, it is covered in the oxide layer 21 of the second heavily doped N-type epitaxial layer 14 upper surface, oxide layer 21 upper surface
The second metallic cathode 20 that vertical direction aligns with the second p type island region 15, the second described p type island region 15 is from silicon and silicon dioxide
Interface extends vertically through the second heavily doped N-type epitaxial layer 14 and extends in the first lightly doped n type epitaxial layer 12, described second
Metallic cathode 20 is groove shape, and the second metallic cathode 20 extends vertically through oxide layer 21 and extends to the second inside, p type island region 15.
Described second surface, p type island region 15 is provided with the 3rd p-type heavily doped region 171, and the second metallic cathode 20 runs through oxide layer 21 and extends
To the 3rd p-type heavily doped region 171.
Described vertical-type constant current device accesses the mode of LED drive circuit: defeated after metal anode bridge rectified with civil power rectification
Going out end to be connected, the first metallic cathode 18 connects the input of LED string, the second metallic cathode 20 and LED string outfan phase
Connect, constitute a transient voltage suppressor diode and current regulator diode and the series-parallel circuit of LED.Three ends carry protection merit
The constant current device of energy, forms big current drain path by the 3rd end and protects LED string below.
First lightly doped n type epitaxial layer 12 is identical with the doping content of the second heavily doped N-type epitaxial layer 14, is i.e. equivalent to single
Epitaxy technique；Or use repeatedly epitaxy technique to form more epitaxial layer structure.
Different releases is used to obtain different junction depth and doping in current regulator diode the first p type island region 13 and the second p type island region 15
Concentration.
Semi-conducting material used by device is silicon or carborundum.
Described three ends carry the first p type island region 13 of the vertical-type constant current device of safeguard function and the second p type island region 15 be use boron from
Son injects and then carries out obtaining of thermal diffusion and knot, can regulate implantation dosage, energy and knot time and control the first p-type
District 13 and the concentration of the second p type island region 15, depth and width.
The present invention also provides for the manufacture method that a kind of three described ends carry the vertical-type constant current device of safeguard function, including following step
Rapid:
Step 1: using heavily doped P-type silicon chip as substrate, surface is once epitaxially formed the first lightly doped n type thereon
Epitaxial layer 12；
Step 2: carry out second time extension, form the second heavily doped N-type epitaxial layer on the first lightly doped n type epitaxial layer 12
14；
Step 3: grow one layer of field oxide at the second heavily doped N-type epitaxial layer 14 upper surface, forms electrode and field limiting ring groove is carved
The barrier layer of erosion；
Step 4: field oxide in etching window, cloudy at second heavily doped N-type epitaxial layer 14 upper surface wet etching the first metal
Pole 18 and the second metallic cathode 20 to make the two extend to the second heavily doped N-type epitaxial layer 14 internal, etch away whole silicon chip
Field oxygen；
Step 5: carry out first p type island region the 13, second p type island region the 15, the 3rd p-type heavily doped region 171 and the 4th p-type heavy doping
Front pre-oxygen is injected in district 172；
Step 6: carry out first the 13, second p type island region the 15, the 3rd, p type island region p-type heavily doped region the 171, the 4th p-type heavy doping
The injection in district 172, then carries out the 13, second p type island region 15, the first p type island region knot, the 4th p-type heavily doped region 172,
Three p-type heavily doped regions 171 are connected with first metallic cathode the 18, second metallic cathode 20 respectively；
Step 7: pre-oxygen before deposit, deposits pre-metal dielectric；
Step 8: ohm hole etches, deposits aluminum metal；
Step 9: etching metal, forms metallic cathode and terminal field limiting ring field plate；
Step 10: deposit passivation layer, carves PAD hole；
Step 11: heavily doped N-type silicon chip lower surface forms metal anode 19.
The resistivity of P type substrate 11 is 0.015, and the first p type island region 13 implantation dosage is 4 × 1015cm-2, junction depth is 8 microns；
The implantation dosage of the second p type island region 15 is 3 × 1016cm-2, junction depth is 8 microns；The injection of the first lightly doped n type epitaxial layer 12
Dosage is 1.2 × 1015cm-2；The implantation dosage of the second heavily doped N-type epitaxial layer 14 is 2.5 × 1015cm-2。
The operation principle of the present invention is:
Three ends carry safeguard function vertical constant current device access LED and drive electric as shown in Fig. 2 (c), current regulator diode metal anode
19 connect civil power hot end after over commutation, and the first metallic cathode 18 connects the input of LED string, the second metal electrode
20 ground connection are big electric current of releasing after surge, under the normal running conditions of surge useless, and the wink that current regulator diode cellular is peripheral
State voltage suppression diode part does not works, and current regulator diode part normally works, as shown in the voltage-current curve of Fig. 3, with
Anode voltage to increase, the electric current of device increases, and when anode voltage is 10V, current regulator diode electric current reaches 3 × 10-6A/μm
Constant current value, when anode voltage is 10 to 100V, device can ensure flow over characteristic carry out the LED string that driven is follow-up；
When having transient state high energy impact current regulator diode and drive circuit, P type substrate 11 connects metal anode 19, therefore P type substrate current potential
Higher than the first lightly doped n type epitaxial layer 12, P type substrate 11 and the first lightly doped n type epitaxial layer 12 constitute the PN junction of positively biased,
And the current potential of the first lightly doped n type epitaxial layer 12 is higher than the 3rd p-type heavily doped region connected with the second metallic cathode 20 of ground connection
171, so the current potential of the first lightly doped n type epitaxial layer 12 and the second heavily doped N-type epitaxial layer 14 is higher than the second p type island region 15
With the 3rd heavily doped P-type district 171 so that the second p type island region 15 and the first lightly doped n type epitaxial layer 12 constitute reverse-biased PN
Knot, transient voltage suppressor diode part total is equivalent to the series connection of two transient voltage suppressor diodes, whole device total
Electric capacity becomes big, and response time is also greatly shortened, and the first lightly doped n type epitaxial layer 12 and the second p type island region 15 constitute reverse-biased PN
Knot avalanche ionization produces big electric current and flows to ground from the second negative electrode 20, reaches the big function of current of releasing, quickly becomes low-resistance from high-impedance state
State, as shown in Fig. 4 voltage-current curve, surge is when oversampling circuit, and the transient voltage suppressor diode part of device can quickly be rung
Should, by the two ends clamper of device and drive circuit in the safe voltage of 160V, it is to avoid the current regulator diode part of device is burnt,
Absorb surge power so that current regulator diode and drive circuit are from the destruction of surge pulse.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any it is familiar with this skill
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage of art.Therefore, all institutes
Belong to and technical field has all equivalences that usually intellectual is completed under without departing from disclosed spirit and technological thought
Modify or change, must be contained by the claim of the present invention.
Claims (10)
1. an end carries the vertical-type constant current device of safeguard function, it is characterised in that: include vertical current regulative diode and wink
State voltage suppression diode two parts；
Described vertical current regulative diode includes first above the P type substrate above metal anode, metal anode, P type substrate
Lightly doped n type epitaxial layer, two about symmetrical the first p type island region of vertical current regulative diode portion centers, be positioned at first and gently mix
The second heavily doped N-type epitaxial layer above miscellaneous N-type epitaxy layer and between two the first p type island regions, it is arranged on the second heavy doping
First N-type heavily doped region of N-type epitaxy layer upper surface, cover the second heavily doped N-type epitaxial layer and the upper surface of the first p type island region
The first metallic cathode；Described first p type island region extends vertically through the second heavily doped N-type epitaxial layer also from the interface of silicon and silicon dioxide
Extend in the first lightly doped epitaxial layer；Described first metallic cathode is groove shape, and the groove at two ends extends to the first p type island region
In, the first N-type heavily doped region and the first metallic cathode form Ohmic contact；
Described transient voltage suppressor diode includes above the P type substrate above metal anode, metal anode, P type substrate
First lightly doped n type epitaxial layer, it is positioned at the second heavily doped N-type epitaxial layer above the first lightly doped n type epitaxial layer, is positioned at
Vertical current regulative diode portion outboard and in the second p type island region within the second heavily doped N-type epitaxial layer, to be covered in second heavily doped
The second metallic cathode that the oxide layer of miscellaneous N-type epitaxy layer upper surface, the vertical direction of oxide layer upper surface align with the second p type island region,
The second described p type island region extends vertically through the second heavily doped N-type epitaxial layer and extends to first and gently mix from the interface of silicon and silicon dioxide
In miscellaneous N-type epitaxy layer, the second described metallic cathode is groove shape, and the second metallic cathode extends vertically through oxide layer and extends to
Inside second p type island region.
Three ends the most according to claim 1 carry the vertical constant current device of safeguard function, it is characterised in that: described vertical-type
Constant current device accesses the mode of LED drive circuit: the outfan after metal anode bridge rectified with civil power rectification is connected, and first
Metallic cathode connects the input of LED string, and the second metallic cathode connects with LED string outfan, constitutes a transient voltage
Suppression diode and current regulator diode and the series-parallel circuit of LED.
Three ends the most according to claim 1 carry safeguard function vertical-type constant current device, it is characterised in that: first is lightly doped
N-type epitaxy layer is identical with the doping content of the second heavily doped N-type epitaxial layer, is i.e. equivalent to single epitaxial technique；Or use repeatedly
Epitaxy technique forms more epitaxial layer structure.
4. carry safeguard function vertical-type constant current device according to three ends described in claim 1, it is characterised in that: at current regulator diode
First p type island region uses different releases to obtain different junction depth and doping content with the second p type island region.
Three ends the most according to claim 1 carry the vertical-type constant current device of safeguard function, it is characterised in that: used by device
Semi-conducting material is silicon or carborundum.
Three ends the most according to claim 1 carry the vertical-type constant current device of safeguard function, it is characterised in that: the first p-type
The surface in district is provided with the 4th p-type heavily doped region, and the groove at described first metallic cathode two ends extends in the 4th p-type heavily doped region.
Three ends the most according to claim 6 carry the vertical-type constant current device of safeguard function, it is characterised in that: described second
Surface, p type island region is provided with the 3rd p-type heavily doped region, and the second metallic cathode runs through oxide layer and extends in the 3rd p-type heavily doped region.
8. the manufacture method of the vertical-type constant current device of safeguard function is carried according to three ends described in claim 1 to 5 any one,
It is characterized in that comprising the following steps:
Step 1: using heavily doped P-type silicon chip as substrate, surface is once epitaxially formed the first lightly doped n type thereon
Epitaxial layer；
Step 2: carry out second time extension, form the second heavily doped N-type epitaxial layer on the first lightly doped n type epitaxial layer；
Step 3: grow one layer of field oxide at the second heavily doped N-type epitaxial layer upper surface, forms electrode and field limiting ring is groove etched
Barrier layer；
Step 4: field oxide in etching window, at second heavily doped N-type epitaxial layer upper surface wet etching the first metallic cathode
With the second metallic cathode make the two extend to inside the second heavily doped N-type epitaxial layer, etch away whole silicon chip field oxygen；
Step 5: carry out pre-oxygen before the injection of the first p type island region, the second p type island region；
Step 6: carry out the first p type island region, the injection of the second p type island region, then carries out the first p type island region, the second p type island region knot,
First p type island region, the second p type island region are connected with the first metallic cathode, the second metallic cathode respectively；
Step 7: pre-oxygen before deposit, deposits pre-metal dielectric；
Step 8: ohm hole etches, deposits aluminum metal；
Step 9: etching metal, forms metallic cathode and terminal field limiting ring field plate；
Step 10: deposit passivation layer, carves PAD hole；
Step 11: heavily doped N-type silicon chip lower surface forms metal anode.
Three ends the most according to claim 7 carry the manufacture method of the vertical-type constant current device of safeguard function, it is characterised in that
Comprise the steps:
Step 1: using heavily doped P-type silicon chip as substrate, surface is once epitaxially formed the first lightly doped n type thereon
Epitaxial layer；
Step 2: carry out second time extension, form the second heavily doped N-type epitaxial layer on the first lightly doped n type epitaxial layer；
Step 3: grow one layer of field oxide at the second heavily doped N-type epitaxial layer upper surface, forms electrode and field limiting ring is groove etched
Barrier layer；
Step 4: field oxide in etching window, at second heavily doped N-type epitaxial layer upper surface wet etching the first metallic cathode
With the second metallic cathode make the two extend to inside the second heavily doped N-type epitaxial layer, etch away whole silicon chip field oxygen；
Step 5: before carrying out the first p type island region, the second p type island region, the 3rd p-type heavily doped region and the injection of the 4th p-type heavily doped region
Pre-oxygen；
Step 6: carry out the first p type island region, the second p type island region, the 3rd p-type heavily doped region, the injection of the 4th p-type heavily doped region,
Then carry out the first p type island region, the second p type island region knot, the 4th p-type heavily doped region, the 3rd p-type heavily doped region 171 respectively with
First metallic cathode, the second metallic cathode connect；
Step 7: pre-oxygen before deposit, deposits pre-metal dielectric；
Step 8: ohm hole etches, deposits aluminum metal；
Step 9: etching metal, forms metallic cathode and terminal field limiting ring field plate；
Step 10: deposit passivation layer, carves PAD hole；
Step 11: heavily doped N-type silicon chip lower surface forms metal anode.
Three ends the most according to claim 8 carry the manufacture method of the vertical-type constant current device of safeguard function, and its feature exists
In: the resistivity of P type substrate is 0.015, and the first p type island region implantation dosage is 4 × 1015cm-2, junction depth is 8 microns；2nd P
The implantation dosage in type district is 3 × 1016cm-2, junction depth is 8 microns；The implantation dosage of the first lightly doped n type epitaxial layer 12 is
1.2×1015cm-2；The implantation dosage of the second heavily doped N-type epitaxial layer 14 is 2.5 × 1015cm-2。
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| CN201610604750.9A CN106024912A (en) | 2016-07-27 | 2016-07-27 | Vertical constant current device with three-terminal protection function and manufacturing method thereof |
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| CN201610604750.9A CN106024912A (en) | 2016-07-27 | 2016-07-27 | Vertical constant current device with three-terminal protection function and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110473912A (en) * | 2019-09-07 | 2019-11-19 | 电子科技大学 | Vertical current regulative diode and its manufacturing method |
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| CN104638020A (en) * | 2015-02-15 | 2015-05-20 | 电子科技大学 | Epitaxial layer-based vertical current regulative diode and manufacturing method thereof |
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| CN101563784A (en) * | 2006-06-23 | 2009-10-21 | 维谢综合半导体有限责任公司 | Low forward voltage drop transient voltage suppressor and method of fabricating |
| US20130334695A1 (en) * | 2012-06-19 | 2013-12-19 | Nxp B.V. | Electronic device and method of manufacturing such device |
| CN202979418U (en) * | 2012-12-20 | 2013-06-05 | 南阳市凌峰电子科技有限公司 | Power supply for light-emitting diode (LED) lamp |
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