CN106011771A - Apparatus for rapidly depositing DLC film on surface of piston ring, and method thereof - Google Patents

Apparatus for rapidly depositing DLC film on surface of piston ring, and method thereof Download PDF

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Publication number
CN106011771A
CN106011771A CN201610633332.2A CN201610633332A CN106011771A CN 106011771 A CN106011771 A CN 106011771A CN 201610633332 A CN201610633332 A CN 201610633332A CN 106011771 A CN106011771 A CN 106011771A
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piston ring
deposition
film layer
dlc film
vacuum chamber
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CN106011771B (en
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廖斌
欧阳晓平
罗军
张旭
吴先映
韩然
王宇东
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Beijing Normal University
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Beijing Normal University
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/343—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one DLC or an amorphous carbon based layer, the layer being doped or not

Abstract

The invention discloses an apparatus for rapidly depositing a DLC film on the surface of a piston ring, and a method thereof. The apparatus comprises: an ion injection system used for vertically uniformly injecting ion flow; a vacuum chamber, wherein one end of the vacuum chamber is in sealing connection with the ion injection system, the other end of the vacuum chamber is in sealing connection with one end of a broad-beam magnetic filtering deposition system, and the other end of the broad-beam magnetic filtering deposition system is provided with an FCVA deposition cathode; a tool system used for realizing autorotation of a piston ring tool cylinder; and an intelligent control device used for controlling the ion injection and film deposition process, displaying a measurement result and preliminarily processing data. The apparatus and the method can realize large-batch uniform plating of the surface of the piston ring with the DLC film with high hardness and low friction coefficient.

Description

A kind of Apparatus and method at piston ring surface fast deposition DLC film layer
Technical field
The present invention relates to nuclear science technology and application, plate DLC particularly to one at piston ring surface The system of (high-performance diamond like carbon, Diamond-like Carbon) film.
Background technology
Generally, due to particular job environment of engine piston ring, it is desirable to its coefficient of friction is relatively low, And hardness is higher.Existing piston ring coating is mainly chromium nitride ultra high build coating, but the master of this ultra high build coating Wanting shortcoming is that coefficient of friction is bigger.
Along with people's raising to environment attention degree, piston ring efficiency of combustion and thermal conversion efficiency are also carried Going out higher requirement, research finds that DLC film layer can be good at meeting present high rigidity, low-friction coefficient Requirement, presently mainly utilize chemical gaseous phase deposit (CVD, Chemical Vapor Deposition) skill Art DLC films deposited layer, but the inventors found that this employing CVD technology DLC films deposited layer Method there is problems in that
1) DLC film layer sedimentation rate is relatively slow, and for industrialized production, relative time is relatively costly；
2) DLC film layer internal compressive stress is relatively big, is difficulty with the preparation of super thick film layers, simultaneously DLC film layer The requirement that can not meet practical application in industry relatively poor with piston ring adhesion；
3) the existing piston ring life-span be difficult to reach in electromotor properly functioning 3000 hours or more than.
Therefore, need the thicknesses of layers to engine piston ring badly and coefficient of friction improves, but use existing Some equipment or technology are difficulty with again.
Summary of the invention
In view of this, the present invention proposes a kind of method at piston ring surface fast deposition DLC film layer and sets Standby, it is possible to realize high-volume, plate at piston ring surface there is high rigidity and low-friction coefficient equably DLC film.
For reaching above-mentioned purpose, the technical scheme is that and be achieved in that:
On the one hand, the present invention proposes a kind of equipment at piston ring surface fast deposition DLC film layer, this equipment Including:
Ion implant systems, adds including metallic vapour ion source (MEVVA) negative electrode and MEVVA ion source Speed electrode, for being longitudinally uniformly injected into ion stream, the substrate after piston ring polishes forms pinning layer；
Vacuum chamber, its one end is tightly connected with described ion implant systems, and the other end is sealedly connected with wide beam magnetic One end of filter deposition system, the other end of described wide beam Magnetic filter depositing system is provided with FCVA deposition the moon Pole, for depositing metal transfer film layer and DLC film layer on described pinning layer；The bottom of described vacuum chamber The side of described ion implant systems is provided with vacuum chamber bleeding point；Described wide beam Magnetic filter depositing system Facing described ion implant systems to arrange, the periphery of described wide beam Magnetic filter depositing system is disposed with wide beam magnetic , the tube wall of described wide beam Magnetic filter depositing system offers ionized gas intake valve；
Fixture system, including being positioned at the piston ring frock cylinder of described vacuum chamber and for making described piston ring The electric rotating machine of frock cylinder rotation；
Intelligent controlling device, be used for controlling described ion implant systems, described wide beam Magnetic filter depositing system with And described fixture system, the process of ion implanting and film deposition is controlled, and is used for showing measurement knot Really, and for carrying out the preliminary treatment of data.
As the optional embodiment of one, the above-mentioned equipment at piston ring surface fast deposition DLC film layer, Also include: heating system, be positioned at the top of described vacuum chamber, for heating to whole vacuum chamber, compensate The temperature loss caused because of rotation during plated film on piston ring.
Optionally, in the above-described embodiment, described heating system is used for maintaining temperature in coating process steady It is scheduled on 280-380 degree Celsius；And/or, described vacuum chamber is connected by screw rod with described ion implant systems, Employing sealing ring seals；Described wide beam Magnetic filter depositing system is connected fixing with described vacuum chamber by screw rod, And use sealing ring to seal.
Optionally, in the above-described embodiment, described intelligent controlling device includes:
Control module, controls son including vacuumizing submodule, arc source depositional control submodule and ion implanting Module, wherein, the control interface of described vacuumizing submodule is provided with heater switch, vacuum chamber temperature Setup unit, cooling water temperature setup unit, left/right air intake valve air inflow setup unit；
Display module, for showing operation interface and the measurement result of described control module；
Data processing module, for carrying out preliminary treatment to the measurement data obtained.
Optionally, in the above-described embodiment, described wide beam Magnetic filter depositing system is wide beam rectangular bend, The size of described wide beam is (300～500) × (150～300) mm2；And/or, the position of described intake valve Outlet distance away from described wide beam Magnetic filter depositing system is 50～100mm.
Optionally, in the above-described embodiment, the quantity of described piston ring frock cylinder is at least one, The altitude range of described piston ring frock cylinder is 400～800mm；Described piston ring frock cylinder has not Same model, selects the piston ring frock cylinder of different-diameter according to the piston ring of different-diameter；And/or, institute State piston ring frock cylinder to be connected by clip is fixing with described base, described electric rotating machine and described vacuum chamber By magnet fluid sealing, in described vacuum chamber, base is fixed on motor by shop bolt, passes through during rotation Flat key transmission.
Optionally, in the above-described embodiment, a diameter of the 20～40 of described MEVVA ion source cathode Mm, outlet diameter is 200～450mm, and beam intensity is 10～80mA；And/or, described MEVVA Ion source accelerates electrode and uses strip beam channel, elongates ion beam current to realize in a longitudinal direction It is uniformly injected into.
On the other hand, the present invention also proposes a kind of method at piston ring surface fast deposition DLC film layer, adopts By the equipment at piston ring surface fast deposition DLC film layer described in any one embodiment above-mentioned, the method Including:
1) pinning layer preparation process: be respectively started ion implant systems and FCVA according to default experiment condition Depositing device, pinning layer is prepared in the piston ring substrate being installed in vacuum chamber after polishing；
2) metal transfer film layer preparation process: in a vacuum chamber, uses FCVA depositing device, at described nail Prick on layer, prepare metal transfer film layer；
3) DLC film layer preparation process: in a vacuum chamber, open intake valve, be passed through acetylene gas, in institute State metal transfer film layer DLC films deposited layer；The deposit thickness of DLC film layer is by controlling acetylene gas Inlet and the size of magnetic filter duct coil current be controlled.
Optionally, in the above-described embodiment, described pinning layer preparation process farther includes:
A () injects for the first time: open heater switch, sets heating-up temperature；Base material steel sample is fixedly installed on sample Platform, starts to inject by MEVVA ion implant systems；
Wherein, injecting the pure Ti ion source that ion source is purity 99.9%, injection condition is: vacuum 1 × 10-3~ 6×10-3Pa, injection arc voltage: 50～100V, high pressure: 6～40kV, arc stream: 10～40mA, injectant Amount 1 × 1015～1 × 1016/cm2；
B () Ti deposits: start FCVA depositing system, carries out on the basis of injecting the film layer formed for the first time Deposition；
Wherein, deposition arc source is the Ti arc source of purity 99%, and sedimentary condition is: vacuum 1 × 10-3~ 6×10-3Pa, deposition arc stream: 100～120A, field supply: 2.4～4.4A, arc stream: 500～800mA, Back bias voltage :-100V～-300V, dutycycle 50%～100%, sedimentation time 3～60 seconds；
C () second time is injected: be again started up MEVVA ion implant systems, in the Ti sedimentary formed Inject ion deposition layer；
Wherein, injecting the pure Ti ion source that ion source is purity 99.9%, injection condition is: vacuum 1 × 10-3~ 6×10-3Pa, injection arc voltage: 60～80V, high pressure: 10～45kV, arc stream: 30～60mA, injectant Amount 1 × 1015～1 × 1016/cm2。
Optionally, in the above-described embodiment, described metal transfer film layer preparation process farther includes:
Depositing Ti film transition zone 203 on pinning layer 202, sedimentary condition is: deposition arc source is purity 99% Ti arc source, vacuum: 1 × 10-3～6 × 10-3Pa, deposit arc stream: 100～120A, field supply: 2.4～ 4.4A, arc stream: 500～800mA, back bias voltage :-150V～-350V, dutycycle 50%～100%, deposition Time 10～20 minutes.
Optionally, in the above-described embodiment, described DLC film layer preparation process farther includes:
Open left or right air intake valve, be passed through C2H2, in metal transfer film layer DLC films deposited；Its In, sedimentary condition is: deposition arc source is the Ti arc source of purity 99%, air inflow: 150-300sccm, very Reciprocal of duty cycle: 2 × 10-2～5 × 10-2Pa, deposit arc stream: 60～110A, field supply: 2～3A, arc stream: 600～ 900mA, back bias voltage :-150V～-350V, dutycycle 10%～50%, sedimentation time 200～400 minutes； In optional preparation process every 30～60min, close acetylene air intake valve, the metal Ti layer of deposition release stress, Sedimentation time is 3-6min, recovers to open air intake valve subsequently and continues DLC films deposited layer.
To sum up, relative to prior art, the invention have the advantages that
1, the embodiment of the present invention propose to deposit on the piston ring based on ion beam technology super thick DLC film method and Equipment, by base material carries out high-octane metallic element injection, makes base material Asia surface atom and injects metal Form the pinning layer structure of metal-base material atom mixing, the pinning layer structure so formed and basal layer so that after The adhesion of the structural film layer that continuous Magnetic filter deposits is the best, so that its peel strength is increased By force；
2, comparing the PVD such as magnetron sputtering, electron beam evaporation and general CVD deposition method, the present invention uses Magnetically filter arc deposition equipment atom ionization level the highest, about more than 90%.Accordingly, because this Bright atom ionization level is high, and plasma density can be made to increase, and during film forming, bulky grain reduces, and is conducive to improving Film hardness, wearability, compactness, film-substrate cohesion etc.；
3, present example uses the novel high-density plasma utilizing arc discharge to produce as acetylene gas Ionization source, at magnetic filter duct internal ionization acetylene gas, makes the ionizing efficiency of acetylene be greatly improved；Compared to Existing CVD deposition thick film DLC, the sedimentation rate of deposition of thick DLC of the present invention is the 2-4 of existing mode Times.
4, compared to existing deposition DLC method, the thick DLC film layer internal stress of present invention deposition is low, deposition Hardness high, 1800～3500HV；More clear superiority is that in the present invention, the hardness of DLC film layer can With by the air inflow of acetylene, magnetic filter duct coil current size accuracy controlling.
5, the MEVVA ion implant systems that deposition process disclosed by the invention and equipment use, compared to commonly Metal ion implantation system for, there is bigger beam intensity and bigger beam spot area.
6, the method and apparatus at piston ring surface fast deposition DLC film layer disclosed by the invention develops specially More the control interface of hommization, easily operates, and not specially requires the professional level of operator.
Accompanying drawing explanation
The accompanying drawing of the part constituting the present invention is used for providing a further understanding of the present invention, and the present invention shows Meaning property embodiment and explanation thereof are used for explaining the present invention, are not intended that inappropriate limitation of the present invention.At accompanying drawing In:
Fig. 1 is a kind of equipment group at piston ring surface fast deposition DLC film layer that the embodiment of the present invention proposes Become structural representation；
Fig. 2 is the structural representation of the DLC film layer in the embodiment of the present invention；
Fig. 3 is the control interface schematic diagram of embodiment of the present invention intelligent controlling device.
Description of reference numerals
100 ion implant systems negative electrodes
101 accelerate electrode
102 vacuum chamber bleeding points
103 electric rotating machines
104 fixture systems
105 wide beam magnetic fields
106 intake valves
107 FCVA deposition cathode
108 firing line bags
109 wide beam Magnetic filter depositing systems
110 heating systems
201 piston rings
202 pinning layers
203 metal transfer film layers
204 DLC film layers
301 heater switch
302 vacuum chamber temperature setting unit
303 cooling water temperature setup units
304 left/right air intake valve air inflow setup units
305 mechanical pumps
306 prime valves
Valve is taken out on 307 sides
308 venting valves
309 molecular pumps
310 high thresholds
311 ion implant systems
312 fixture systems
313 wide beam depositing systems
314 vacuum chamber bleeding points
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clearly Chu, be fully described by, it is clear that described embodiment be only a part of embodiment of the present invention rather than Whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not making creation The every other embodiment obtained under property work premise, broadly falls into the scope of protection of the invention.
It should be noted that in the case of not conflicting, the embodiment in the present invention and the feature in embodiment Can be mutually combined.
Inadequate for existing piston ring hardness, coefficient of friction is high and the life-span is not enough, it is difficult to batch production etc. Problem, the present inventor designs a kind of equipment at piston ring surface fast deposition DLC film layer, right Thicknesses of layers and the coefficient of friction of engine piston ring are improved so that the thicknesses of layers of piston ring can Reach more than 30 microns, and can be by controlling the air inflow of acetylene, wide beam Magnetic filter depositing system electric current Size realize to film hardness from 1500～3500HV regulation and control, this is other equipment or technology is difficulty with 's.
Below in conjunction with the accompanying drawings, each preferred embodiment of the present invention is described further:
Product embodiments
With reference to shown in Fig. 1, the present embodiment proposes a kind of equipment at piston ring surface fast deposition DLC film layer, This equipment mainly includes consisting of: ion implant systems, vacuum chamber, wide beam Magnetic filter depositing system 109, These building blocks are done by FCVA deposition cathode 107, fixture system 104 and intelligent controlling device below Further illustrate, as follows:
1) ion implant systems includes that MEVVA ion source cathode 100 and MEVVA ion source accelerates electrode 101, wide beam Magnetic filter depositing system is for being longitudinally uniformly injected into ion stream.Wherein, " longitudinally " refer to be perpendicular to Exit direction, longitudinal beam diameter is up to 500-800mm, so processing height of piston ring direction (longitudinally) Sufficiently high.
In the present embodiment, above-mentioned ion implant systems, as a kind of injection device, utilizes metallic vapour ion source I.e. MEVVA ion source, carries out metal ion implantation and forms pinning layer, thus improve film base junction basal layer Make a concerted effort.Wherein, Ti injecting voltage is 4～80kV, and beam intensity is 1～80mA, and implantation dosage is 1×1015～1 × 1016/cm2, injecting the degree of depth is 70～420nm, and the diameter of beam spot is 400～800mm.
2) one end of vacuum chamber is tightly connected with ion implant systems, and the other end is sealedly connected with wide beam Magnetic filter One end of depositing system 109, the bottom of vacuum chamber is provided with vacuum chamber near the side of ion implant systems and takes out QI KOU 102.
As the optional embodiment of one, vacuum chamber can be connected by screw rod with ion implant systems, can adopt Seal with sealing ring.Wide beam Magnetic filter depositing system 109 can be connected fixing with vacuum chamber by screw rod, it is possible to Employing sealing ring seals.
3) wide beam Magnetic filter depositing system 109 faces the setting of described ion implant systems, and wide beam Magnetic filter sinks The other end of long-pending system 109 is provided with FCVA deposition cathode 107, wide beam Magnetic filter depositing system 109 Periphery is disposed with wide beam magnetic field 105, and the tube wall of wide beam Magnetic filter depositing system 109 offers ionized gas Intake valve 106, ionized gas intake valve 106 can be provided with left/right air intake valve, and each valve is configured with air inlet Amount setup unit.Wherein, ionized gas can be acetylene C2H2.Wherein, wide beam Magnetic filter depositing system 109 The other end and FCVA deposition cathode 107 can pass through rubber seal rings for seal.
In the present embodiment, above-mentioned wide beam Magnetic filter depositing system, as a kind of precipitation equipment, utilizes Magnetic filter cloudy Pole Vacuum Arc FCVA system, on metal pinning layer, Magnetic filter deposits metal transfer film layer and super thick class Diamond (DLC) film layer.As the optional embodiment of one, in metal transfer film layer, metallic element Can be Ti, thickness can be 10～500nm；The filter of precipitation equipment is wide beam filter, and its size is optional With (300～500) × (150～300) mm2；Magnetic filter coil current can be 2.4～4.4A.
It is pointed out that this example uses the novel high-density plasma conduct utilizing arc discharge to produce The ionization source of acetylene gas, at magnetic filter duct internal ionization acetylene gas, makes the ionizing efficiency of acetylene significantly carry High.Therefore, compared to existing CVD deposition thick film DLC, the deposition speed of the present embodiment deposition of thick DLC Rate is 2-4 times of existing mode.
Compared to existing deposition DLC method, the thick DLC film layer internal stress of the present embodiment deposition is low, heavy Long-pending hardness is high, and 1800～3500HV, more clear superiority is the hard of DLC film layer in the present embodiment Degree can be by the air inflow of acetylene, magnetic filter duct coil current size accuracy controlling.
4) fixture system 104 includes piston ring frock cylinder and the electric rotating machine 103 being positioned at vacuum chamber, lives Plug ring frock cylinder is connected by base with electric rotating machine 103, and piston ring frock cylinder is used for fixed piston ring, Base is arranged at piston ring frock bottom of cylinder, for fixed piston ring frock cylinder, electric rotating machine 103 with Base realizes the rotation of piston ring frock cylinder.
It should be noted that the high-volume plated film of piston ring is realized by fixture system, above-mentioned enforcement In example, at least provided with more than one piston ring frock cylinder, the altitude range of piston ring frock cylinder is 400～800mm, and the thickness of monolithic piston ring is 1～3mm, therefore single fixture system energy in equipment Enough realize the uniform coated of 100～800 piston rings, super large batch can be realized by adding tool system Piston ring surface plated film.
It should be noted that in above-described embodiment, piston ring surface fast deposition DLC film layer equipment also Including intelligent controlling device, be used for controlling ion implant systems, wide beam Magnetic filter depositing system 109 and Fixture system 104, is controlled the process of ion implanting and film deposition, and is used for showing measurement result, And for carrying out the preliminary treatment of data.
As the optional embodiment of one, above-mentioned intelligent controlling device includes: control module, display module And data processing module.Wherein:
Control module includes that vacuumizing submodule, arc source depositional control submodule and ion implanting control submodule Block, wherein, the control interface of vacuumizing submodule is provided with heater switch 301, vacuum chamber temperature sets Cell 302, cooling water temperature setup unit 303, left/right air intake valve air inflow setup unit 304.
Display module is for the operation interface of display control module and measurement result.
Data processing module, for the measurement data obtained carries out preliminary treatment, obtains and is used for automatically controlling The analog voltage signal of system, during in order to be automatically adjusted such as deposition line, injection line and deposition and to inject Between.
Wherein, correlation procedure is as follows: the measurement data that computer obtains from PLC processes, and processes Process includes: a small resistor of connecting on relevant control circuit, and big electric current or voltage signal are become series connection The analog voltage signal that resistance is small in ends, this voltage signal is multiplied by corresponding proportionality coefficient and i.e. can get computer control The display numerical value of end processed.This Based Intelligent Control end also have function be such as automatically adjusted as deposition line, inject line, And sedimentation time.It addition, regulation deposition current process can be sketched and be: PLC reads associated voltage signal, It is converted into line reading, if beyond required scope, regulation striking current and deflection bend pipe field supply, Wherein the regulation step-length of striking current is 5A, and deflection bend pipe field supply regulation step-length is 0.2A.
Optionally, the control software that above-mentioned intelligent controlling device uses is based on force control interface development For the software of piston ring surface filming equipment, control and the measurement of complete machine are touched by SIMATIC-IPC577C Screen computer band Siemens S7200PLC system completes.Above-mentioned intelligent controlling device can use computer as The operation terminal of system, measurement display terminal and data preliminary treatment terminal.The observing and controlling of molecular pump power source is with true The vacuum values of empty meter is read in, heter temperature show and sets, the setting of working gas flow and show direct Being realized by 485 interfaces by computer, remaining operates and measures function by computer to PLC order, It is done directly by PLC.The data of measurement are sent Computer display, record and printout by PLC.Computer The measurement data obtained from PLC processes, and is automatically adjusted such as deposition line, such as: automatically control line Intensity at 600-900mA, injects line 10～80mA, and sedimentation time 200～400 minutes.
As the optional embodiment of one, the above-mentioned equipment at piston ring surface fast deposition DLC film layer is also Comprise the steps that heating system 110, be positioned at the top of vacuum chamber, for heating to whole vacuum chamber, compensate The temperature loss caused due to rotation during plated film on piston ring.
Optionally, heating system 110 is for maintaining the temperature stabilization in coating process Celsius in 280～380 About degree, by the vacuum chamber temperature setting device 302 in Fig. 3.
It should be noted that above-described embodiment is by vacuum indoor location heating system, maintain plated film mistake In journey, temperature stabilization is at 280～380 degrees centigrade, should at a temperature of DLC film layer surface roughness, should Power and film-substrate cohesion are all in optimum state.This is because, during temperature height can make film deposition The accumulation of stress realizes release, but too high temperature can make DLC film layer sp3 key change into sp2 key, i.e. institute The graphitization of meaning, hardness can lower.
Below based on the various embodiments described above, each group to the equipment at piston ring surface fast deposition DLC film layer The optional position relationship of some between forming apparatus is described further, and in actual implementation process, can use The combination of any one or more in following position relationship, is described as follows:
1) about wide beam Magnetic filter depositing system
Wide beam Magnetic filter depositing system 109 can be wide beam rectangular bend, and the size of wide beam can be (300～500) × (150～300) mm2。
Wherein, wide beam Magnetic filter depositing system 109 can become 180 degree of angles with ion implant systems, in other words, Ion implantation and deposition equipment is just to setting, and such position relationship is conducive to the design of vacuum chamber.
2) about intake valve
The position of intake valve 106 away from outlet distance at 50-100mm, in this position air inlet, the ionization of gas Efficiency is high, and intake valve pipeline is difficult to by coating particle contamination simultaneously.
3) about piston ring frock cylinder
Piston ring frock cylinder has different models, selects different-diameter according to the piston ring of different-diameter Piston ring frock cylinder.
Piston ring frock cylinder is connected by clip is fixing with base, and electric rotating machine 103 and vacuum chamber pass through magnetic Fluid-tight, in vacuum chamber, base is fixed on motor by shop bolt, by flat key transmission during rotation.
4) about MEVVA ion source cathode
The negative electrode of MEVVA ion source cathode 100 is 20～40mm, and outlet diameter is 200～450mm, Beam intensity is 10～80mA.
5) electrode is accelerated about MEVVA ion source
MEVVA ion source accelerates electrode 101 and uses strip beam channel, for drawing in a longitudinal direction Long ion beam current is to realize being uniformly injected into.
6) about FCVA deposition cathode
Filtering cathode vacuum electric arc uses machinery triggering mode, and cathode size is 60～110mm, outlet diameter It is 200～300mm.
Compared with prior art, various embodiments of the present invention have the advantage that
For improving the adhesion of DLC film layer and base material, the present invention is compound with plasma-deposited by ion implanting Technology, by base material carries out high-octane metallic element injection, makes base material Asia surface atom and injects metal Form the pinning layer structure of metal-base material atom mixing, the pinning layer structure so formed and basal layer so that after The adhesion of the structural film layer that continuous Magnetic filter deposits is the best, so that its peel strength is increased By force..Additionally, the magnetically filter arc deposition equipment atom ionization level that the embodiment of the present invention uses is the highest, about More than 90%, thus owing to atom ionization level is high, and then plasma density can be made to increase, big during film forming Granule reduces, and is conducive to improving film hardness, wearability, compactness, film-substrate cohesion etc..
It addition, the disclosed use at piston ring surface fast deposition DLC film layer of the embodiment of the present invention MEVVA ion implant systems, for common metal ion implantation system, has bigger bundle Intensity of flow and bigger beam spot area, and the embodiment of the present invention develops the control of more hommization the most specially Interface processed, easily operates, and not specially requires the professional level of operator.
Embodiment of the method
Based on any of the above-described kind of embodiment, the present embodiment is open a kind of in piston ring surface fast deposition DLC film The method of layer, the method uses any of the above-described embodiment disclosed at piston ring surface fast deposition DLC film layer Equipment, the method includes following process technique:
1) pinning layer 202 preparation process: according to default experiment condition be respectively started ion implant systems and FCVA depositing device, preparation nail in the piston ring substrate 201 being installed in vacuum chamber after polishing Prick layer 202；
2) metal transfer film layer 203 preparation process: in a vacuum chamber, uses FCVA depositing device, at nail Prick on layer 202, prepare metal transfer film layer 203；
3) DLC film layer 204 preparation process: in a vacuum chamber, opens intake valve 106, is passed through acetylene gas, DLC films deposited layer 204 on metal transfer film layer 203；The deposit thickness of DLC film layer is by controlling second The inlet of alkynes gas and the size of magnetic filter duct coil current are controlled.
For ease of being further appreciated by said method flow process, below in conjunction with reference to the example shown in Fig. 3, to The technological process of piston ring surface efficient fast-growth thickness DLC film layer, is described as follows:
1, preparation process piston ring substrate 201 polished and cleaned and equipment evacuation:
A) polishing: use No. 400, No. 1000, the substrate 101 to Φ 25mm of No. 1500 sand paper successively Polishing, re-uses diamond polishing cream and polishing flannelet and processes the substrate polish after polishing.
B) clean: use ethanol and acetone to substrate ultrasonic cleaning.
C) evacuation: open side and take out valve 307, open molecular pump 309 and mechanical pump 305；Utilize mechanical pump Vacuum chamber is carried out pre-taking out, when vacuum is less than 10Pa, closes other valve 307 of taking out and open front step valve 306 simultaneously With high threshold 310, work process keep 303 cooling water temperature show values be less than 30 degrees Celsius, such as Fig. 3 institute Show.
2, pinning layer 202 is prepared:
A () injects for the first time: open heater switch 301, sets heating-up temperature.Base material steel sample is fixedly installed In sample stage, start to inject by MEVVA ion implant systems.
Wherein, injecting the pure Ti ion source that ion source is purity 99.9%, injection condition is: vacuum 1 × 10-3~ 6×10-3Pa, injection arc voltage: 50～100V, high pressure: 6～40kV, arc stream: 10～40mA, injectant Amount 1 × 1015～1 × 1016/cm2。
B () Ti deposits: start FCVA depositing system, carries out on the basis of injecting the film layer formed for the first time Deposition.
Wherein, deposition arc source is the Ti arc source of purity 99%, and sedimentary condition is: vacuum 1 × 10-3~ 6×10-3Pa, deposition arc stream: 100～120A, field supply: 2.4～4.4A, arc stream: 500～800mA, Back bias voltage :-100V～-300V, dutycycle 50%～100%, sedimentation time 3～60 seconds.
C () second time is injected: be again started up MEVVA ion implant systems, notes in the Ti sedimentary formed Enter ion deposition layer.
Wherein, injecting the pure Ti ion source that ion source is purity 99.9%, injection condition is: vacuum 1 × 10-3~ 6×10-3Pa, injection arc voltage: 60～80V, high pressure: 10～45kV, arc stream: 30～60mA, injectant Amount 1 × 1015～1 × 1016/cm2。
3, preparation Ti film transition zone 203:
Depositing Ti film transition zone 203 on pinning layer 202, sedimentary condition is: deposition arc source is purity 99% Ti arc source, vacuum: 1 × 10-3～6 × 10-3Pa, deposit arc stream: 100～120A, field supply: 2.4～ 4.4A, arc stream: 500～800mA, back bias voltage :-150V～-350V, dutycycle 50%～100%, deposition Time 10～20 minutes.
4, the DLC film layer 204 that preparation is thick:
Open air valve 304 (optional left air intake valve or right air intake valve), be passed through C2H2, at Ti film DLC films deposited 204 on transition zone 203, sedimentary condition is: deposition arc source is the Ti arc of purity 99% Source, air inflow: 150-300sccm, vacuum: 2 × 10-2～5 × 10-2Pa, deposition arc stream: 60～110A, Field supply: 2～3A, arc stream: 600～900mA, back bias voltage :-150V～-350V, dutycycle 10%～ 50%, acetylene air inlet (during preparing thick film every 30～60min, is closed in sedimentation time 200～400 minutes Valve, the metal Ti layer of deposition release stress, sedimentation time is 3-6min, recovers subsequently to open air intake valve Continue DLC films deposited layer.
It should be noted that in above-described embodiment, for preventing DLC film layer from bursting apart because of blocked up, often depositing After 30-60min DLC film layer, close air intake valve and utilize wide beam Magnetic filter depositing system to deposit metallic film Ti transition zone 3-6min, after metal transfer film deposition completes, reopens air intake valve and is passed through C2H2, profit With wide beam Magnetic filter depositing system DLC films deposited layer, the total sedimentation time of DLC is 200-400min, so Overall DLC film layer is Ti metal level and the modulation of DLC film layer, and modulation period is the 3-10 cycle.
For further illustrating above-mentioned technological process, the equipment operation that preparation super thick DLC is given below is real Example, concrete operations flow process is as described below:
1, after computer starting, running control software, enter working interface as shown in Figure 3；
2, trigger heating, open heater switch 301, vacuum chamber is heated to 280～380 degrees Celsius；
3, open MEVVA injected system, start ion implanting；
4, after having injected, open depositing system and carry out super thin metal deposition；
5, after super thin metal has deposited, it is again turned on MEVVA injected system and injects；
6, after having injected, open depositing system and start metal transfer film deposition；
7, after transition zone has deposited, do not close depositing system, open left/right air intake valve 304 simultaneously, defeated Enter air inflow, it is achieved C2H2Being passed through and carry out DLC deposition, in deposition process, every 30-60min closes gas trap Door, deposits metal stresses releasing layer 3-6min.
So, by controlling magnetic field intensity, C2H2 air inflow, metal arc stream, adjusting time and negative bias Pressure and the dutycycle of its correspondence, to optimize the skills such as the thickness of DLC film, hardness, coefficient of friction and adhesion Art index.
From the various embodiments described above it can be seen that the present invention by newly-designed in piston ring surface fast deposition The equipment of DLC film layer, uses ion implanting and plasma-deposited complex technique and FCVA method, real Now high-volume, in piston ring surface plating there is the DLC film of high rigidity and low-friction coefficient equably, and film Layer thickness is up to more than 30 microns, and hardness can realize the regulation and control from 1500-3500HV.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all at this Within bright spirit and principle, any modification, equivalent substitution and improvement etc. made, should be included in this Within bright protection domain.

Claims (10)

1. the equipment at piston ring surface fast deposition DLC film layer, it is characterised in that including:
Ion implant systems, including metallic vapour ion source (MEVVA) negative electrode (100) and MEVVA Ion source accelerates electrode (101), for being longitudinally uniformly injected into ion stream, and the substrate (201) after piston ring polishes Upper formation pinning layer (202)；
Vacuum chamber, its one end is tightly connected with described ion implant systems, and the other end is sealedly connected with wide beam magnetic One end of filter deposition system (109), the other end of described wide beam Magnetic filter depositing system (109) is arranged There is FCVA deposition cathode (107), for depositing metal transfer film layer (203) on described pinning layer (202) With DLC film layer (204)；The bottom of described vacuum chamber is provided with very near the side of described ion implant systems Empty room bleeding point (102)；Described wide beam Magnetic filter depositing system (109) faces described ion implant systems Arranging, the periphery of described wide beam Magnetic filter depositing system (109) is disposed with wide beam magnetic field (105), described width Ionized gas intake valve (106) is offered on the tube wall of bundle Magnetic filter depositing system (109)；
Fixture system (104), including being positioned at the piston ring frock cylinder of described vacuum chamber and described for making The electric rotating machine (103) of piston ring frock cylinder rotation；
Intelligent controlling device, is used for controlling described ion implant systems, described wide beam Magnetic filter depositing system And described fixture system (104) (109), the process of ion implanting and film deposition is controlled, and For showing measurement result, and for carrying out the preliminary treatment of data.
Equipment at piston ring surface fast deposition DLC film layer the most according to claim 1, it is special Levy and be, also include: heating system (110), be positioned at the top of described vacuum chamber, for whole vacuum Room is heated, the temperature loss caused because of rotation when compensating plated film on the piston ring.
Equipment at piston ring surface fast deposition DLC film layer the most according to claim 1 and 2, It is characterized in that:
Described heating system (110) is used for maintaining in coating process temperature stabilization at 280-380 degree Celsius；With / or,
Described vacuum chamber is connected by screw rod with described ion implant systems, uses sealing ring to seal；Described width Bundle Magnetic filter depositing system (109) is connected fixing with described vacuum chamber by screw rod, and uses sealing ring to seal.
Equipment at piston ring surface fast deposition DLC film layer the most according to claim 3, it is special Levying and be, described intelligent controlling device includes:
Control module, controls son including vacuumizing submodule, arc source depositional control submodule and ion implanting Module, wherein, the control interface of described vacuumizing submodule is provided with heater switch (301), vacuum Room temperature setup unit (302), cooling water temperature setup unit (303), left/right air intake valve air inflow set Cell (304)；
Display module, for showing operation interface and the measurement result of described control module；
Data processing module, for the measurement data obtained carries out preliminary treatment, obtains and is used for carrying out automatically The analog voltage signal controlled, in order to be automatically adjusted such as deposition line, inject line and deposition and inject Time.
5. according to described in any one of Claims 1-4 at piston ring surface fast deposition DLC film layer Equipment, it is characterised in that:
Described wide beam Magnetic filter depositing system (109) is wide beam rectangular bend, and the size of described wide beam is (300～500) × (150～300) mm2；And/or,
The position of described intake valve (106) the outlet distance away from described wide beam Magnetic filter depositing system 50～ 100mm。
Equipment at piston ring surface fast deposition DLC film layer the most according to claim 5, it is special Levy and be:
The quantity of described piston ring frock cylinder is at least one, the altitude range of described piston ring frock cylinder It is 400～800mm；Described piston ring frock cylinder has different models, according to the piston of different-diameter Ring selects the piston ring frock cylinder of different-diameter；And/or,
Described piston ring frock cylinder is connected by clip is fixing with described base, described electric rotating machine (103) With described vacuum chamber by magnet fluid sealing, in described vacuum chamber, base is fixed on motor by shop bolt, By flat key transmission during rotation.
7. according to described in any one of claim 1 to 6 at piston ring surface fast deposition DLC film layer Equipment, it is characterised in that:
A diameter of the 20～40mm of described MEVVA ion source cathode (100), outlet diameter be 200～ 450mm, beam intensity is 10～80mA；And/or,
Described MEVVA ion source accelerates electrode (101) and uses strip beam channel, for longitudinal side Upwards elongate ion beam current to realize being uniformly injected into.
8. the method at piston ring surface fast deposition DLC film layer, it is characterised in that use above-mentioned The equipment at piston ring surface fast deposition DLC film layer described in any one claim, the method includes:
Prepare pinning layer (202) step: according to default experiment condition be respectively started ion implant systems and FCVA depositing device, the upper preparation of the piston ring substrate (201) being installed in vacuum chamber after polishing Pinning layer (202)；
Prepare metal transfer film layer (203) step: in a vacuum chamber, use FCVA depositing device, in institute State on pinning layer (202), prepare metal transfer film layer (203)；
Preparation DLC film layer (204) step: in a vacuum chamber, be passed through acetylene gas by intake valve (106) Body, DLC films deposited layer (204) on described metal transfer film layer (203)；The deposition of DLC film layer The size of thickness inlet and magnetic filter duct coil current by controlling acetylene gas is controlled.
Method at piston ring surface fast deposition DLC film layer the most according to claim 8, it is special Levying and be, described pinning layer (202) step of preparing farther includes:
A () injects for the first time: open heater switch (301), sets heating-up temperature；Base material steel sample is fixedly installed In sample stage, start to inject by MEVVA ion implant systems；
B () Ti deposits: start FCVA depositing system, carries out on the basis of injecting the film layer formed for the first time Deposition；
C () second time is injected: be again started up MEVVA ion implant systems, notes in the Ti sedimentary formed Enter ion deposition layer.
The method at piston ring surface fast deposition DLC film layer the most according to claim 8 or claim 9, It is characterized in that:
Described metal transfer film layer (203) step of preparing farther includes:
Depositing Ti film transition zone (203) on pinning layer (202), sedimentary condition is: deposition arc source is The Ti arc source of purity 99%, vacuum: 1 × 10-3～6 × 10-3Pa, deposition arc stream: 100～120A, magnetic field Electric current: 2.4～4.4A, arc stream: 500～800mA, back bias voltage :-150V～-350V, dutycycle 50%～100%, Sedimentation time 10～20 minutes；And/or,
Described preparation DLC film layer (204) step farther includes:
Open left or right air intake valve, be passed through C2H2, on metal transfer film layer (203), deposit DLC Film (204)；Wherein, sedimentary condition is: deposition arc source is the Ti arc source of purity 99%, air inflow: 150-300sccm, vacuum: 2 × 10-2～5 × 10-2Pa, deposit arc stream: 60～110A, field supply: 2～ 3A, arc stream: 600～900mA, back bias voltage :-150V～-350V, dutycycle 10%～50%, deposition Time 200～400 minutes；In optional preparation process every 30～60min, close acetylene air intake valve, deposition The metal Ti layer of release stress, sedimentation time is 3-6min, recovers to open air intake valve subsequently and continues deposition DLC film layer.
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CN106756868A (en) * 2016-11-10 2017-05-31 北京师范大学 A kind of method for improving doped diamond-like film layer quality
CN106756868B (en) * 2016-11-10 2019-07-09 北京师范大学 A method of improving doped diamond-like film layer quality
CN107142478A (en) * 2017-05-08 2017-09-08 北京师范大学 A kind of novel wear resistant corrosion-resistant finishes
CN107142478B (en) * 2017-05-08 2019-06-04 北京师范大学 A kind of novel wear resistant corrosion-resistant finishes
CN109594058A (en) * 2018-12-13 2019-04-09 纳峰真空镀膜（上海）有限公司 A kind of shading process for decorating DLC film
CN109594058B (en) * 2018-12-13 2022-02-11 纳峰真空镀膜（上海）有限公司 Toning method for decorative diamond-like carbon film
WO2020163677A1 (en) * 2019-02-07 2020-08-13 Tenneco Inc. Piston ring with inlaid dlc coating and method of manufacturing
US11060608B2 (en) 2019-02-07 2021-07-13 Tenneco Inc. Piston ring with inlaid DLC coating and method of manufacturing
CN115110031A (en) * 2022-07-11 2022-09-27 超微中程纳米科技（苏州）有限公司 Method for preparing superhard diamond coating

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