CN106007409A - Method for low-temperature melting sealing of device to be packaged and glass insulating terminal and application of method - Google Patents
Method for low-temperature melting sealing of device to be packaged and glass insulating terminal and application of method Download PDFInfo
- Publication number
- CN106007409A CN106007409A CN201610546031.6A CN201610546031A CN106007409A CN 106007409 A CN106007409 A CN 106007409A CN 201610546031 A CN201610546031 A CN 201610546031A CN 106007409 A CN106007409 A CN 106007409A
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- Prior art keywords
- packaged
- glass
- envelope
- insulation terminal
- low temperature
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- 239000011521 glass Substances 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000002844 melting Methods 0.000 title claims abstract description 35
- 230000008018 melting Effects 0.000 title claims abstract description 35
- 238000007789 sealing Methods 0.000 title abstract description 4
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000005245 sintering Methods 0.000 claims abstract description 22
- 239000002131 composite material Substances 0.000 claims abstract description 16
- 238000004806 packaging method and process Methods 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 238000009413 insulation Methods 0.000 claims description 41
- 150000001875 compounds Chemical class 0.000 claims description 24
- 239000000428 dust Substances 0.000 claims description 21
- 239000011159 matrix material Substances 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 238000005538 encapsulation Methods 0.000 claims description 12
- 229910000838 Al alloy Inorganic materials 0.000 claims description 10
- 239000000155 melt Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 abstract description 8
- 229910045601 alloy Inorganic materials 0.000 abstract description 5
- 239000000956 alloy Substances 0.000 abstract description 5
- 229910000833 kovar Inorganic materials 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 239000012212 insulator Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004100 electronic packaging Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001094 6061 aluminium alloy Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 101000795655 Canis lupus familiaris Thymic stromal cotransporter homolog Proteins 0.000 description 1
- 206010019332 Heat exhaustion Diseases 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910000551 Silumin Inorganic materials 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/04—Joining glass to metal by means of an interlayer
- C03C27/042—Joining glass to metal by means of an interlayer consisting of a combination of materials selected from glass, glass-ceramic or ceramic material with metals, metal oxides or metal salts
- C03C27/044—Joining glass to metal by means of an interlayer consisting of a combination of materials selected from glass, glass-ceramic or ceramic material with metals, metal oxides or metal salts of glass, glass-ceramic or ceramic material only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Glass Compositions (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
Abstract
The invention relates to a method for low-temperature melting sealing of a device to be packaged and a glass insulating terminal and application of the method. The method and the application of the method aim at solving the problems of high production cost, low efficiency and low air impermeability in the existing sealing-in process of a device to be packaged and a glass insulating terminal. According to the method, a non-matching sealing-in mode is adopted, in other words, low-melting-point glass powder is adopted as a transitional sealing-in melting solder material, and a kovar alloy ring is omitted; a layer of low-melting-point glass is sintered on the outer side of a high-temperature glass column of an insulating terminal to make a composite glass column, the composite glass column is installed in an end hole of the device to be packaged and assembled through a fixture, and then sintering packaging is directly carried out. The method and the application of the method are applied to packaging of phased-array radar T/R tube shells for aviation, aerospace, ships and warships and ground equipment, and sealing-in of metal shells and glass parts of precise components in other fields.
Description
Technical field
The present invention relates to a kind of device to be packaged and glass insulation terminal low temperature and melt method and the application thereof of envelope.
Background technology
Along with developing rapidly of information technology, integrated level and the caloric value of high-power electronic component are more and more higher, and temperature is too high
Becoming and affect one of device precision and the key factor causing component failure, this proposes higher wanting to electronic package material thermal diffusivity
Ask.Meanwhile, during electronic devices and components thermal cycle work, it is easily generated bigger thermal stress, if electronic package material and semiconductor core chip base
Between plate, thermal coefficient of expansion (Coefficient of thermal expansion, CTE) does not mates, and is easily caused electronic devices and components heat exhaustion and loses
Effect.And for Aero-Space, it is desirable to electronic package material has relatively low density and carries with flight cost to reduce to launch simultaneously
The service behaviour of high aircraft.Therefore, high heat conductance, low thermal coefficient of expansion and lightweight are that development hyundai electronics encapsulating material must
The three basic elements that must consider.
Existing electron trade use high sial or aluminum matrix composite replace traditional kovar alloy as radar signal with connect
The replacement material of closed tube shell, these new materials have the superiority of three aspects: lightweight: can reduce fuel consumption, and raising flies
Line speed, optimizes mobile operations；Heat conduction is good: can reduce the operating temperature of components and parts, improves power and reliability, extends
Working life；Aluminum matrix composite has a high average resonance frequencies: average resonance frequencies than aluminium alloy, titanium alloy, magnesium alloy and
Steel exceed 65～80%, apply this material to be remarkably improved equipment fundamental frequency, prevent resonance, improve integrally-built reliability.
Aluminium alloy, high sial and aluminum matrix composite, no matter in military or civilian Electronic Packaging field, have huge city
Demand, relates to glass insulation terminal when fusing sealing problem, and owing to the fusing point of both materials is relatively low, welding temperature is interval
Less, limit the selection of its welding method and technique.In the past, by kovar alloy housing and glass column (insulator) be
Under 900 DEG C of-960 DEG C of high temperature, direct sintering melts and is enclosed in together.When above-mentioned new material welds with glass insulator, 900 DEG C of high temperature burn
The traditional method of knot is the most infeasible (fusing point of aluminium alloy and aluminum matrix composite just about 660 DEG C).To this end, most units
Aluminum-based matrix material (high sial, aluminium alloy or aluminum matrix composite) is in glass insulator outer wrapping with the sealing-in of insulated terminal
One kovar alloy ring, then and uses the soldering process of Au-Sn or Sn-Pb solder, such as Fig. 1 between aluminum-based matrix material
Shown in；Its brazing temperature is typically between 200 DEG C～300 DEG C, and not only cost is high, process cumbersome, and reserves to subsequent technique
Thermograde is low, simultaneously this process for sealing air-tightness compliance rate relatively low (particularly shoulder hole).
Summary of the invention
The present invention is to solve that during existing device to be packaged and glass insulation terminal sealing-in, production cost is high, efficiency is low and airtight
Property low problem, and provide a kind of device to be packaged and glass column low temperature to melt method and the application thereof of envelope.
The method that the device a kind of to be packaged of the present invention melts envelope with glass insulation terminal low temperature specifically sequentially includes the following steps:
At the outer surface one layer low melting point glass dust of sintering of the high temp glass post of glass insulation terminal, obtain compound glass post；Then
Compound glass post is placed in the stomidium of device shell to be packaged, uses fixture to assemble direct sintering encapsulation, i.e. complete to be packaged
Device and the sealing-in of glass column；The material of described device to be packaged is high sial, aluminium alloy or aluminum matrix composite.
The device a kind of to be packaged of the present invention and glass insulation terminal low temperature melt the method for envelope for precision components metal shell with
The sealing-in of glass workpiece.
The invention has the beneficial effects as follows:
The compound glass post low-temperature sintering technology that present invention employs original creation carries out Electronic Packaging to matrix material, according to different
Matrix material (aluminium alloy, high sial and aluminum matrix composite), uses different low melting point glass dust and technological parameter, produces
Corresponding compound glass post, then the most successfully sinters to melt on housing and seals glass insulator.The most not only reduce material
Material cost (is not required to the solder of costliness), and eliminates solder assembly process and (save man-hour and eliminate anthropic factor to sealing-in matter
The impact of amount) so that air-tightness compliance rate is improved, improves the reliability of assembly, also leave for subsequent technique wider
Abundant thermograde space.
Accompanying drawing explanation
Fig. 1 be existing aluminum matrix composite with the sealing-in of glass insulation terminal after generalized section；Wherein 1 is high temp glass post, 2
For cutting down ring, 3 is solder, and 4 is the device to be packaged of high sial material, and 5 is wiring pin；
Fig. 2 is that the device to be packaged of the present invention melts, with glass insulation terminal low temperature, the generalized section being honored as a queen；Wherein 1 is compound glass
Glass post, 2 is high temp glass post, and 3 is low melting point glass dust, and 4 is the device to be packaged of high sial material, and 5 is wiring pin.
Detailed description of the invention
Technical solution of the present invention is not limited to act detailed description of the invention set forth below, also includes any group between each detailed description of the invention
Close.
Detailed description of the invention one: a kind of device to be packaged of present embodiment and glass insulation terminal low temperature melt the method for envelope specifically by
Following steps are carried out:
At the outer surface one layer low melting point glass dust of sintering of the high temp glass post of glass insulation terminal, obtain compound glass post；Then
Compound glass post is placed in the stomidium of device shell to be packaged, uses fixture to assemble direct sintering encapsulation, i.e. complete to be packaged
Device and the sealing-in of glass column；The material of described device to be packaged is high sial, aluminium alloy or aluminum matrix composite.
Detailed description of the invention two: present embodiment is unlike detailed description of the invention one: the high temperature glass of described glass insulation terminal
The dielectric constant of glass post is 4～4.5.Other are identical with detailed description of the invention one.
Detailed description of the invention three: present embodiment is unlike detailed description of the invention one or two: the height of described glass insulation terminal
The melting point of temperature glass column is 900 DEG C～960 DEG C.Other are identical with detailed description of the invention one or two.
Detailed description of the invention four: present embodiment is unlike one of detailed description of the invention one to three: described low melting point glass dust
Melting point be 420 DEG C～550 DEG C.Other are identical with one of detailed description of the invention one to three.
Detailed description of the invention five: present embodiment is unlike one of detailed description of the invention one to four: described compound glass post table
The thickness of face low melting point glass dust is 0.15～0.45mm.Other are identical with one of detailed description of the invention one to four.
Detailed description of the invention six: present embodiment is unlike one of detailed description of the invention one to five: described in present embodiment
Low melting point glass dust can be melting point be the D250 watery fusion glass dust of 450 DEG C.One of other and detailed description of the invention one to five
Identical.
Detailed description of the invention seven: present embodiment is unlike one of detailed description of the invention one to six: described employing fixture assembles
Sintering temperature in the encapsulation of good direct sintering is identical with the melting point of low melting point glass dust.One of other and detailed description of the invention one to six
Identical.
Detailed description of the invention eight: present embodiment is unlike one of detailed description of the invention one to seven: described employing fixture assembles
Sintering temperature in the encapsulation of good direct sintering is more than the melting point of low melting point glass dust, simultaneously less than the solidus temperature of device to be packaged.
Other are identical with one of detailed description of the invention one to seven.
Detailed description of the invention nine: the device a kind of to be packaged of present embodiment and glass insulation terminal low temperature melt the method for envelope for essence
The metal shell of close components and parts and the sealing-in of glass workpiece.
Detailed description of the invention ten: present embodiment is unlike detailed description of the invention nine: a kind of device to be packaged and glass insulation
Terminal low temperature melts the method encapsulation for the phased-array radar T/R shell on Aeronautics and Astronautics, naval vessel or ground of envelope.Other with tool
Body embodiment nine is identical.
Detailed description of the invention 11: present embodiment is unlike detailed description of the invention nine or ten: a kind of device to be packaged and glass
When glass insulated terminal low temperature melts the encapsulation of the method for envelope T/R shell in phased-array radar, when the material of device to be packaged is high
When sial or aluminum matrix composite, the thermal coefficient of expansion of the ceramic chip being placed in device to be packaged and the heat of described device to be packaged
The coefficient of expansion is identical；When the material of device to be packaged is aluminium alloy, the ceramic chip in device to be packaged needs by machinery side
Formula is connected with device to be packaged.Other are identical with detailed description of the invention nine or ten.
In present embodiment, a kind of device to be packaged and glass insulation terminal low temperature melt the method for envelope T/R pipe in phased-array radar
During the encapsulation of shell, when the material of device to be packaged is high sial or aluminum matrix composite, it is placed in the ceramic core in device to be packaged
The thermal coefficient of expansion of sheet is identical with the thermal coefficient of expansion of described device to be packaged refers to that thermal coefficient of expansion error control between the two exists
In ± 10%.
Following example checking is used to the method have the benefit that
Embodiment one: a kind of device to be packaged of the present embodiment and glass insulation terminal low temperature melt the method for envelope the most according to the following steps
Carry out:
The outer surface of the glass insulation terminal of a size of Φ 2.4mm × 1.6mm is coated with one layer low melting point glass dust, is subsequently placed in
In sintering furnace, by the temperature of sintering furnace in 40min from room temperature to 436 DEG C, under conditions of temperature is 436 DEG C be incubated
After 30min, cool to 300 DEG C of taking-ups with the furnace, obtain compound glass post；The size of described compound glass post is Φ 2.9mm；Logical
Crossing macroscopic view and microexamination, find that combined column is coaxial, surface gloss is good, and faying face is good.
Then use assembling positioning fixture that compound glass post is assemblied in treating after ethanol and acetone mixture ultrasonic waves for cleaning twice
In the stomidium of packaging housing, then by temperature in 40min from room temperature to 520 DEG C, in the condition that temperature is 520 DEG C
After lower insulation 10min, cool down 1 hour, i.e. complete the sealing-in of device to be packaged and compound glass post；Described device material to be packaged
Matter is CE11 silumin；The melting point of described low melting point glass dust is 520 DEG C.
Detect the outward appearance after its sealing-in and air-tightness, after testing: melt envelope interface smooth, solder non-spill, compound glass post keep
Coaxially, air-tightness is up to standard.
Device to be packaged and glass insulation terminal low temperature melt the section being honored as a queen as shown in Figure 2.
Embodiment two: a kind of device to be packaged of the present embodiment and glass insulation terminal low temperature melt the method for envelope the most according to the following steps
Carry out:
The outer surface of the glass insulation terminal of a size of Φ 2.4mm × 1.6mm is coated with one layer low melting point glass dust, is subsequently placed in
In sintering furnace, by the temperature of sintering furnace in 40min from room temperature to 436 DEG C, under conditions of temperature is 436 DEG C be incubated
After 30min, cool to 300 DEG C of taking-ups with the furnace, obtain compound glass post；The size of described compound glass post is Φ 2.9mm；Logical
Crossing macroscopic view and microexamination, find that combined column is coaxial, surface gloss is good, and faying face is good.
Then use assembling positioning fixture that compound glass post is assemblied in treating after ethanol and acetone mixture ultrasonic waves for cleaning twice
In the stomidium of packaging housing, then by temperature in 40min from room temperature to 465 DEG C, in the condition that temperature is 520 DEG C
After lower insulation 60min, cool down 1 hour, i.e. complete the sealing-in of device to be packaged and glass column；Described device material to be packaged is
High-volume fractional (55%) enhancing aluminum-base composite material by silicon carbide particles；The melting point of described low melting point glass dust is 465 DEG C.
Detection sealing-in after outward appearance and air-tightness, after testing: melt envelope interface smooth, solder non-spill, compound glass post keep with
Axle, air-tightness is up to standard.
Embodiment three: a kind of device to be packaged of the present embodiment and glass insulation terminal low temperature melt the method for envelope the most according to the following steps
Carry out:
The outer surface of the glass insulation terminal of a size of Φ 1.9mm × 1.9mm is coated with one layer low melting point glass dust, is subsequently placed in
In sintering furnace, by the temperature of sintering furnace in 40min from room temperature to 426 DEG C, under conditions of temperature is 426 DEG C be incubated
After 30min, cool to 300 DEG C of taking-ups with the furnace, obtain compound glass post；The size of described compound glass post is Φ 2.6mm；Logical
Crossing macroscopic view and microexamination, find that combined column is coaxial, surface gloss is good, and faying face is good.
Then use assembling positioning fixture that compound glass post is assemblied in treating after ethanol and acetone mixture ultrasonic waves for cleaning twice
In the stomidium of packaging housing, then by temperature in 40min from room temperature to 490 DEG C, in the condition that temperature is 490 DEG C
After lower insulation 60min, cool down 1 hour, i.e. complete the sealing-in of device to be packaged and glass column；Described device material to be packaged is
6061 aluminium alloys；The melting point of described low melting point glass dust is 490 DEG C.
Detect the outward appearance after its sealing-in and air-tightness, after testing: melt envelope interface smooth, solder non-spill, compound glass post keep
Coaxially, air-tightness is up to standard.
Claims (10)
1. the method that a device to be packaged melts envelope with glass insulation terminal low temperature, it is characterised in that device to be packaged is exhausted with glass
The sub-low temperature of acies melts the method for envelope and specifically sequentially includes the following steps:
At the outer surface one layer low melting point glass dust of sintering of the high temp glass post of glass insulation terminal, obtain compound glass post；So
After compound glass post is placed in the stomidium of device to be packaged, use fixture assemble direct sintering encapsulation, i.e. complete to be packaged
Device and the sealing-in of glass column；The material of described device to be packaged is high sial, aluminium alloy or aluminum matrix composite.
The method that a kind of device to be packaged the most according to claim 1 and glass insulation terminal low temperature melt envelope, its feature exists
Dielectric constant in the high temp glass post of described glass insulation terminal is 4～4.5.
The method that a kind of device to be packaged the most according to claim 1 and glass insulation terminal low temperature melt envelope, its feature exists
Melting point in the high temp glass post of described glass insulation terminal is 900 DEG C～960 DEG C.
The method that a kind of device to be packaged the most according to claim 1 and glass insulation terminal low temperature melt envelope, its feature exists
Melting point in described low melting point glass dust is 420 DEG C～550 DEG C.
The method that a kind of device to be packaged the most according to claim 1 and glass insulation terminal low temperature melt envelope, its feature exists
Thickness in described compound glass post surface low melting point glass dust is 0.15～0.45mm.
The method that a kind of device to be packaged the most according to claim 1 and glass insulation terminal low temperature melt envelope, its feature exists
Sintering temperature in described employing fixture assembles direct sintering encapsulation is identical with the melting point of low melting point glass dust.
The method that a kind of device to be packaged the most according to claim 1 and glass insulation terminal low temperature melt envelope, its feature exists
Sintering temperature in described employing fixture assembles direct sintering encapsulation is more than the melting point of low melting point glass dust, simultaneously less than treating
The solidus temperature of packaging.
8. the application of the method for claim 1, it is characterised in that device to be packaged and glass insulation terminal low temperature melt envelope
Method for the sealing-in of metal shell and the glass workpiece of precision components.
Device to be packaged the most according to claim 8 and glass insulation terminal low temperature melt the application of the method for envelope, its feature
It is that device to be packaged and glass insulation terminal low temperature melt the method phased array thunder for Aeronautics and Astronautics, naval vessel or ground of envelope
Reach the encapsulation of T/R shell.
Device to be packaged the most according to claim 9 and glass insulation terminal low temperature melt the application of the method for envelope, and it is special
Levy when being encapsulation that device to be packaged and glass insulation terminal low temperature melt the method for envelope T/R shell in phased-array radar,
When the material of device to be packaged is high sial or aluminum matrix composite, the thermal expansion of the ceramic chip being placed in device to be packaged
Coefficient is identical with the thermal coefficient of expansion of described device to be packaged；When the material of device to be packaged is aluminium alloy, device to be packaged
Interior ceramic chip needs to be connected with device to be packaged mechanically.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610546031.6A CN106007409B (en) | 2016-07-12 | 2016-07-12 | A kind of device to be packaged melts the method and its application of envelope with glass insulation terminal low temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610546031.6A CN106007409B (en) | 2016-07-12 | 2016-07-12 | A kind of device to be packaged melts the method and its application of envelope with glass insulation terminal low temperature |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106007409A true CN106007409A (en) | 2016-10-12 |
| CN106007409B CN106007409B (en) | 2019-01-11 |
Family
ID=57109602
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610546031.6A Active CN106007409B (en) | 2016-07-12 | 2016-07-12 | A kind of device to be packaged melts the method and its application of envelope with glass insulation terminal low temperature |
Country Status (1)
| Country | Link |
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| CN (1) | CN106007409B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106960706A (en) * | 2017-04-07 | 2017-07-18 | 西安明科微电子材料有限公司 | A kind of low temperature glass sintering process for sealing-in aluminium silicon carbide |
| CN111039547A (en) * | 2019-12-31 | 2020-04-21 | 河南理工大学 | Preparation and use method of low-temperature glass ring for sealing aluminum-based composite material and glass insulation terminal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3632324A (en) * | 1967-08-10 | 1972-01-04 | Okaya Electric Industry Co | Method of sealing display cathodes in a glass envelope |
| CN1193612A (en) * | 1997-03-14 | 1998-09-23 | 赵维海 | Hermetic sealing method for metal and glass |
| CN102219385A (en) * | 2011-04-28 | 2011-10-19 | 北京科技大学 | Aluminium sealing microcrystalline glass and preparation method thereof |
| CN104961357A (en) * | 2015-07-07 | 2015-10-07 | 哈尔滨工业大学（威海） | Low-temperature connecting method for K9 glass and titanium metal |
-
2016
- 2016-07-12 CN CN201610546031.6A patent/CN106007409B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3632324A (en) * | 1967-08-10 | 1972-01-04 | Okaya Electric Industry Co | Method of sealing display cathodes in a glass envelope |
| CN1193612A (en) * | 1997-03-14 | 1998-09-23 | 赵维海 | Hermetic sealing method for metal and glass |
| CN102219385A (en) * | 2011-04-28 | 2011-10-19 | 北京科技大学 | Aluminium sealing microcrystalline glass and preparation method thereof |
| CN104961357A (en) * | 2015-07-07 | 2015-10-07 | 哈尔滨工业大学（威海） | Low-temperature connecting method for K9 glass and titanium metal |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106960706A (en) * | 2017-04-07 | 2017-07-18 | 西安明科微电子材料有限公司 | A kind of low temperature glass sintering process for sealing-in aluminium silicon carbide |
| CN111039547A (en) * | 2019-12-31 | 2020-04-21 | 河南理工大学 | Preparation and use method of low-temperature glass ring for sealing aluminum-based composite material and glass insulation terminal |
| KR20210086932A (en) * | 2019-12-31 | 2021-07-09 | 허난 폴리테크닉 유니버시티 | Manufacturing of low temperature glass ring used for sealing aluminum composite material and glass insulation terminal and its use method |
| CN111039547B (en) * | 2019-12-31 | 2022-05-24 | 河南理工大学 | Preparation and use method of low-temperature glass ring for sealing aluminum-based composite material and glass insulation terminal |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106007409B (en) | 2019-01-11 |
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