CN105990320B - Transient voltage suppressor, electrostatic protection element thereof and array thereof - Google Patents
Transient voltage suppressor, electrostatic protection element thereof and array thereof Download PDFInfo
- Publication number
- CN105990320B CN105990320B CN201510045415.5A CN201510045415A CN105990320B CN 105990320 B CN105990320 B CN 105990320B CN 201510045415 A CN201510045415 A CN 201510045415A CN 105990320 B CN105990320 B CN 105990320B
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- Prior art keywords
- doped region
- diode
- wellblock
- conductive type
- transient voltage
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- 230000001052 transient effect Effects 0.000 title claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000002955 isolation Methods 0.000 claims description 38
- 230000005611 electricity Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 229910052785 arsenic Inorganic materials 0.000 description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 10
- 229910052796 boron Inorganic materials 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 230000036632 reaction speed Effects 0.000 description 8
- 230000003068 static effect Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103144513A TWI658563B (en) | 2014-12-19 | 2014-12-19 | Transient voltage suppressor and esd protection device thereof, and array thereof |
TW103144513 | 2014-12-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105990320A CN105990320A (en) | 2016-10-05 |
CN105990320B true CN105990320B (en) | 2019-06-25 |
Family
ID=56130341
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510045415.5A Active CN105990320B (en) | 2014-12-19 | 2015-01-29 | Transient voltage suppressor, electrostatic protection element thereof and array thereof |
Country Status (3)
Country | Link |
---|---|
US (1) | US9741708B2 (en) |
CN (1) | CN105990320B (en) |
TW (1) | TWI658563B (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10043793B2 (en) * | 2016-02-03 | 2018-08-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and circuit |
CN108039347A (en) * | 2018-01-17 | 2018-05-15 | 上海长园维安微电子有限公司 | A kind of integrated ultra-low capacitance returns greatly the common mode filtering device of TVS suddenly |
TWI745595B (en) * | 2018-06-05 | 2021-11-11 | 源芯半導體股份有限公司 | Electrostatic discharge protection device |
US10573635B2 (en) * | 2018-07-23 | 2020-02-25 | Amazing Microelectronics Corp. | Transient voltage suppression device with improved electrostatic discharge (ESD) robustness |
CN110875304B (en) * | 2018-08-31 | 2022-06-17 | 无锡华润上华科技有限公司 | Transient voltage suppression device and method of manufacturing the same |
CN109314131B (en) * | 2018-09-05 | 2021-06-08 | 香港应用科技研究院有限公司 | Low capacitance electrostatic discharge (ESD) protection structure with double floating-connected wells |
US10930637B2 (en) | 2018-09-06 | 2021-02-23 | Amazing Microelectronic Corp. | Transient voltage suppressor |
CN109300786B8 (en) * | 2018-10-08 | 2021-12-24 | 电子科技大学中山学院 | Transient voltage suppressor and manufacturing method thereof |
TWI765166B (en) * | 2019-07-16 | 2022-05-21 | 源芯半導體股份有限公司 | Transient voltage suppression device |
CN111640740A (en) * | 2020-06-03 | 2020-09-08 | 捷捷微电(上海)科技有限公司 | TVS device and manufacturing method thereof |
TWI768451B (en) * | 2020-08-31 | 2022-06-21 | 創意電子股份有限公司 | Semiconductor structure and electrostatic discharge protection circuit |
CN115483206A (en) * | 2021-06-15 | 2022-12-16 | 无锡华润上华科技有限公司 | Electrostatic protection structure and preparation method thereof |
US20230010423A1 (en) * | 2021-07-06 | 2023-01-12 | Amazing Microelectronic Corp. | Multi-channel transient voltage suppression device |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0955471A (en) * | 1995-08-10 | 1997-02-25 | Denso Corp | Surge protective circuit |
JP2007294613A (en) * | 2006-04-24 | 2007-11-08 | Sanyo Electric Co Ltd | Semiconductor device and its manufacturing method |
US7554839B2 (en) * | 2006-09-30 | 2009-06-30 | Alpha & Omega Semiconductor, Ltd. | Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch |
US8981425B2 (en) * | 2013-04-24 | 2015-03-17 | Alpha And Omega Semiconductor Incorporated | Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS) |
US8431958B2 (en) * | 2006-11-16 | 2013-04-30 | Alpha And Omega Semiconductor Ltd | Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS) |
US8120887B2 (en) * | 2007-02-28 | 2012-02-21 | Alpha & Omega Semiconductor, Ltd. | MOS transistor triggered transient voltage suppressor to provide circuit protection at a lower voltage |
JP2010129893A (en) * | 2008-11-28 | 2010-06-10 | Sony Corp | Semiconductor integrated circuit |
US8350355B2 (en) * | 2010-03-01 | 2013-01-08 | Infineon Technologies Ag | Electrostatic discharge devices |
US8237193B2 (en) * | 2010-07-15 | 2012-08-07 | Amazing Microelectronic Corp. | Lateral transient voltage suppressor for low-voltage applications |
US8552530B2 (en) | 2010-08-02 | 2013-10-08 | Amazing Microelectronics Corp. | Vertical transient voltage suppressors |
US8217462B2 (en) * | 2010-09-22 | 2012-07-10 | Amazing Microelectronic Corp. | Transient voltage suppressors |
US8431999B2 (en) * | 2011-03-25 | 2013-04-30 | Amazing Microelectronic Corp. | Low capacitance transient voltage suppressor |
US8710627B2 (en) * | 2011-06-28 | 2014-04-29 | Alpha And Omega Semiconductor Incorporated | Uni-directional transient voltage suppressor (TVS) |
CN102957136B (en) * | 2011-08-19 | 2015-01-14 | 登丰微电子股份有限公司 | Load driving circuit with inrush current protection |
US8785971B2 (en) * | 2011-11-23 | 2014-07-22 | Amazing Microelectronic Corp. | Transient voltage suppressor without leakage current |
TWI496274B (en) | 2012-06-08 | 2015-08-11 | Richtek Technology Corp | Transient voltage suppressor circuit and manufacturing method of diode device therefor |
TWI477018B (en) * | 2012-08-07 | 2015-03-11 | Richtek Technology Corp | Transient voltage suppressor circuit, and diode device therefor and manufacturing method thereof |
US8921943B2 (en) * | 2012-12-10 | 2014-12-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for ESD structures |
US8835977B2 (en) * | 2012-12-19 | 2014-09-16 | Alpha And Omega Semiconductor Incorporated | TVS with low capacitance and forward voltage drop with depleted SCR as steering diode |
TWI522535B (en) * | 2013-02-05 | 2016-02-21 | 台達電子工業股份有限公司 | Power protection apparatus and method |
-
2014
- 2014-12-19 TW TW103144513A patent/TWI658563B/en active
-
2015
- 2015-01-29 CN CN201510045415.5A patent/CN105990320B/en active Active
- 2015-06-25 US US14/751,098 patent/US9741708B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN105990320A (en) | 2016-10-05 |
TW201624664A (en) | 2016-07-01 |
US20160181236A1 (en) | 2016-06-23 |
TWI658563B (en) | 2019-05-01 |
US9741708B2 (en) | 2017-08-22 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20180713 Address after: Taiwan Hsinchu County China jhubei City, Taiwan 5 yuan a Street No. 9 Building 1 Applicant after: Upi Semiconductor Corp. Address before: 6/F, 9 Taiyuan First Street, Zhubei City, Hsinchu County, Taiwan, China Applicant before: UBIQ Semiconductor Corp. |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210205 Address after: 3 / F, 5 / F, 197 Tai Po First Street, Tai Po Li, Zhunan Town, Miaoli County, Taiwan, China Patentee after: Yuanxin Semiconductor Co.,Ltd. Address before: 1 / F, 9 / F, No.5, Taiyuan 1st Street, Zhubei City, Hsinchu County, Taiwan, China Patentee before: uPI Semiconductor Corp. |