CN105990275A - Power module package and method of fabricating thereof - Google Patents
Power module package and method of fabricating thereof Download PDFInfo
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- CN105990275A CN105990275A CN201510090493.7A CN201510090493A CN105990275A CN 105990275 A CN105990275 A CN 105990275A CN 201510090493 A CN201510090493 A CN 201510090493A CN 105990275 A CN105990275 A CN 105990275A
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- power module
- module package
- hole
- radiating
- heat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Abstract
The present invention relates to a power module package comprising an upper sealing part and a lower heat radiation part. The rod of the lower heat radiation part is inserted in the upper sealing part having a penetration hole comprising the first penetration hole of the heat radiation substrate and the second penetration of a molding member. So, the upper sealing part is bonded to the lower heat radiation part. Heat generated in the upper sealing part can be quickly emitted. Also, the present invention includes a method of fabricating the power module package which can insert the rod of the lower heat radiation part into the penetration hole of the upper sealing part.
Description
Technical field
The present invention relates to a kind of power module package part and preparation method thereof.
Background technology
Along with energy usage amount increases in global scope, start the effective utilization to the limited energy
Give greatest care.Then, using and/or in industrial products at existing household electrical appliances, application is intended to effectively
SPM (the IPM of ground conversion (conversion) energy；Intelligent Power Module)
The employing of inverter obtain accelerationization.
Along with the expansion of such power model is applied, the demand in market increasingly tends to highly integrated/Gao Rong
Quantization/miniaturization, the heat dissipation problem of incident electronic unit causes the knot of the hydraulic performance decline of whole module
Really.
Generally, power conversion process produces higher heat, if the heat produced can not get effectively
Elimination, the most possibly even cause module or even whole system performance reduce and damage.Further, closely
The trend come is to be also required to multi-functional, the miniaturization of parts in SPM, thus be accordingly used in many merits
Energy, the structure improvement of miniaturization are no doubt key factors, and effective release of consequent heat also becomes
Important factor.
In the prior art, it is made as following structure to improve the thermal property of power semiconductor modular:
The heat-radiating substrate being made up of the metal that pyroconductivity is higher mounts force device, then uses encapsulant
Injection mo(u)lding.
Now, mould is utilized to be realized in view of production and production efficiency in injection molding process,
Generally by epoxy-plastic packaging material (Epoxy Molding Compound；EMC) use as injected molded polymeric material.
Injected molded polymeric material provides insulating properties, and can utilize as heat transfer path.
Patent documentation 1 proposes a kind of power module package part being pasted with radiator, comprises the steps:
Attaching multiple chips the lower surface bonds radiator of lead frame being wire-bonded, then that it is close
Envelope (sealing).In order to make the lower surface of radiator be exposed to the outside of epoxy-plastic packaging material, need under
Portion's mould is formed the groove for fixed heat sink lower surface.
[prior art literature]
[patent documentation]
Patent documentation 1: US publication US2001/0052639
Summary of the invention
It is an object of the invention to provide and a kind of be injection moulded into the heat radiation base that shaped material is sealed by guarantee
The good engagement state of plate and radiator and the heat of semiconductor chip will be resulted from and discharge towards multiple directions
Power module package part and preparation method thereof.
In order to achieve the above object, a kind of power module package part according to a preferred embodiment of the invention,
Including: top encapsulation part, there is the more than one through hole that through-thickness is formed；Bottom radiating part,
There is main body and more than one rod member, rod member more than one at the upper surface of described main body towards perpendicular
Nogata is to extension, and the lower surface formation face that described bottom radiating part is arranged as with top encapsulation part contacts, its
In, the rod member of bottom radiating part is inserted through in the through hole of top encapsulation part, thus is combined into and can mutually dispel the heat.
Further, the present invention provides the manufacture method of a kind of aforesaid power module package part, including walking as follows
Rapid: first step, it is provided that through-thickness is formed with the heat-radiating substrate of more than one first through hole；
Second step, is loaded into the bottom injection mould of mould by heat-radiating substrate；Third step, by the top of mould
Injection mould is arranged on the injection mould of bottom；4th step, shape in injected molded polymeric material is injected into mould
Become top encapsulation part；5th step, assembles top encapsulation part with bottom radiating part.
Described further below inventive feature and advantage will be will be apparent from by based on accompanying drawing.
Should illustrate, the term used in the present specification and claims or word should not be limited to general
Logical dictionary meanings and explain, but should can be in order to say in an optimal manner based on inventor
Bright oneself invention and appropriately define the principle of term concepts and be construed to meet containing of the technology of the present invention thought
Justice and concept.
Accompanying drawing explanation
Fig. 1 is the solid of power module package part according to a preferred embodiment of the invention viewed from above
Figure.
Fig. 2 is the axonometric chart of power module package part viewed from above before installing bottom radiating part.
Fig. 3 is the profile roughly illustrating the power module package part intercepted with the III-III line of Fig. 1.
Fig. 4 a to Fig. 4 e is the making of diagram power module package part according to a preferred embodiment of the invention
The figure of method.
Symbol description
1: power module package part 100: top encapsulation part
110: heat-radiating substrate 116: the first through hole
120: semiconductor chip 130: lead frame
140: conductive pins 150: injection molding part
156: the second through holes 160: through hole
200: bottom radiating part 211: radiating fin
216: rod member 1000: mould
1100: top injection mould 1200: bottom injection mould
Detailed description of the invention
The embodiment illustrated by combining accompanying drawing will be appreciated that advantages of the present invention, feature and for reaching
The method of purpose.In this manual, when reference being given to the element of each accompanying drawing,
Identical reference represents same or like element throughout the specification.And, if recognized
Need not in this manual related known technology being illustrated that likely purport to the present invention causes
The confusion wanted, then description is omitted.
Hereinafter, power module package part according to the present invention and preparation method thereof is explained in detail with reference to the accompanying drawings.
Fig. 1 to Fig. 3 is roughly to represent power module package part 1 according to a preferred embodiment of the invention
Figure, especially, Fig. 2 schematically illustrates the power module package installed before bottom radiating part 200
Part 1.
Referring to the drawings, power module package part 1 according to a preferred embodiment of the invention has: top is sealed
Dress portion 100, encapsulate by means of injection molding part 150 (encapsulation) heat-radiating substrate 110,
Semiconductor chip 120, lead frame 130 etc.；Bottom radiating part 200, is attached at top encapsulation part 100
Heat-radiating substrate 110 lower surface and to outside discharge heat.Wherein, bottom radiating part 200 can be
Radiator (heat sink).
In power module package part 1 according to a preferred embodiment of the invention, top encapsulation part 100 can
Have: heat-radiating substrate 110, semiconductor chip 120, lead frame 130, conductive pins 140, with
And injection molding part 150.
Specifically, heat-radiating substrate 110 is in attachment face (that is, the one side of heat-radiating substrate 110) 111
Helping the attachment of semiconductor chip 120, meanwhile, heat-radiating substrate 110 is by carrying on the back attachment face 111
The composition surface (that is, the another side of heat-radiating substrate 110) 112 in face to outer exposed with bottom radiating part
200 engage.Top encapsulation part 100 is packaged into and makes the composition surface 112 of aforesaid heat-radiating substrate 110 expose
In outside.Especially, heat-radiating substrate 110 is formed from bored a hole towards another side through-thickness
The first above through hole 116.First through hole 116 helps the bottom as radiator described later to dispel the heat
The combination in portion 200.
Power module package part 1 (can not schemed by stacking insulating barrier on the attachment face 111 of heat-radiating substrate 110
Show).Insulating barrier can be by epoxy material (epoxy), polyimides (polyimide；PI), liquid crystal is high
Molecule (Liquid Crystal Polymer；LCP), phenol resin (Phenol resin), BT resin
(Bismaleimide-Triazine resin；Bismaleimide-triazine resin) in the group that formed one
Individual composition, and be not limited thereto.Insulating barrier makes electric insulation between following circuit pattern and heat-radiating substrate,
And play the heat making to produce in circuit pattern and be delivered to the effect of heat-radiating substrate 110.
In the present invention, it is also possible to laminate circuits pattern (not shown) on the insulating layer.This circuit pattern
Can be formed by the metal forming of lamination pattern on the insulating layer or the lead frame of patterning, or can
Formed by comprising the plating technic of electroless plating coating process and electrolytic coating process.Circuit pattern is not
Being confined to this, explanation in advance can be formed on insulating barrier by the way of various.Circuit pattern can be with
Lead frame 130 engages, or can mounting semiconductor chips 120, and electrically connect with each component parts.
Unlike this, semiconductor chip 120 can also be mounted on lead frame 130.
Power module package part 1 according to a preferred embodiment of the invention can be to use conductive pins
Semiconductor chip 120 and/or lead frame 130 are electrically connected by the wire bonding mode of 140.
As it can be seen, power module package part 1 is formed: semiconductor chip 120；Lead frame 130,
Use as external connection terminals；And injection molding part 150, by epoxy-plastic packaging material (Epoxy Molding
Compound；EMC) constitute with coating conducting lead-in wire 140 and heat-radiating substrate 110.It is molded into towards this
The lead frame 130 that is formed protruding outside of type parts 150, and this injection molding part 150 is packaged into
The composition surface 112 making heat-radiating substrate 110 is externally exposed.Injection molding part 150 can use silica gel
The materials such as (silicon gel) or the epoxy-plastic packaging material of high thermal conductivity that is widely known by the people.
In an embodiment of the present invention, injection molding part 150 is formed with more than one along its thickness direction
The second through hole 156.Preferably, the second through hole 156 is aligned to and the first of heat-radiating substrate 110
Through hole 116 conllinear, in order to the second through hole 156 and the first through hole 116 can be arranged as mutually
Faced by.
Further, the present invention also has bottom radiating part 200, and this bottom radiating part 200 is attached at top envelope
The lower surface in dress portion 100, is more specifically attached at the bottom, composition surface 112 of heat-radiating substrate 110, with
The heat produced in operating is promptly released into outside and improves the operating reliability of semiconductor chip.
Bottom radiating part 200, as a kind of radiator, can be made up of metal material, and be not limited thereto and can
To use all material that can improve heat dissipation characteristics.
Bottom radiating part 200 has multiple radiating fin 211 in main body 210 bottom.Such bottom dissipates
Hot portion 200 has by making refrigerant cycle space between radiating fin 211 and radiating fin carry
The structure of high radiating effect, described cold-producing medium is exactly such as air.
Especially, bottom radiating part 200 has what the smooth top from main body 210 extended towards vertical direction
More than one rod member (rod) 216.Rod member 216 is inserted through top envelope as one with interference inserted mode
The through hole 160 in dress portion 100 and be fixed as realizing by bottom radiating part 200 and top encapsulation part 100
The medium of face contact, it is also possible to use the heat for the inside by resulting from top encapsulation part 100 to be delivered to
Outside heat mobile route.The length of rod member 216 should with by top encapsulation part 100 through-thickness
The formation length of through through hole 160 is equal or more longer than it.Wherein, top encapsulation part 100
Through hole 160 refer to by the first through hole 116 of heat-radiating substrate 110 be formed at injection molding part 150
The second through hole 156 be aligned to straight line and integral part of hole.
Semiconductor chip 120 is mounted on the one side of heat-radiating substrate 110, such as, be mounted on attachment face 111.
Semiconductor chip 120 can be power component or control element.Power component can be by silicon controlled rectifier
(Silicon Controlled Rectifier；SCR), power transistor, insulated gate bipolar transistor
(Insulated Gate Bipolar Transistor；IGBT), MOS transistor, power rectifier, merit
Rate actuator, inverter (inverters), changer (convertor) or the Gao Gong of a combination thereof form
Rate semiconductor chip or diode (diode) are constituted, and are not particularly limited as to this.
As those skilled in the art are known, control element and can include low-power quasiconductor
Chip, this low-power semiconductor chip is used for controlling high power semiconductor chip, such as, be used for controlling power
Element, but be not limited thereto.
It addition, semiconductor chip 120 can be mounted on heat radiation base by means of adhering part (not shown)
On plate 110, and adhering part can be electroconductive component or non-conductive parts.
Additionally, adhering part can be formed by metal lining, adhering part can also be conductive paste
Or electric conductivity adhesive tape.Adhering part can be solder (solder), metal epoxy material, metal paste,
Resin system epoxy material or the jointing tape of excellent heat resistance.
In power module package part 1, the one end part of lead frame 130 is outside heat-radiating substrate 110
Circumferential edges, and electrically connect with semiconductor chip 120.The other end of lead frame 130 extends to note
Molded parts 150 protruding outside.
Fig. 4 a to Fig. 4 e represents the making side of power module package part according to a preferred embodiment of the invention
Method.
With reference to Fig. 4 a, the present invention includes step S100, and offer has more than one in the step s 100
The heat-radiating substrate 110 of the first through hole 116.In the step s 100, heat-radiating substrate 110 mounts face at it
On by attachment lead frame 130 and semiconductor chip 120, and with conductive pins 140 by lead frame
130 electrically connect with semiconductor chip 120.
Then, as shown in Figure 4 b, the present invention includes step S200, in step s 200 by heat-radiating substrate
110 load (loading) in the bottom injection mould 1200 of mould 1000.
Especially, more than one directing pin 1210 is configured to prominent towards vertically top by bottom injection mould 1200
Go out.This directing pin 1210 can be by being placed in the of the heat-radiating substrate 110 of bottom injection mould 1200
One through hole 116 and be projected into above the attachment face of heat-radiating substrate 110.To this end, the length of directing pin 1210
Degree should be more longer than the thickness of heat-radiating substrate 110.Alternatively, directing pin 1210 can end thereon
It is formed with engagement groove 1211.
Directing pin 1210 be possible not only in follow-up injection-moulding step block injection molding part 150 to
First through hole 116 is internal to be flowed into, but also helps to be loaded into the heat-radiating substrate of bottom injection mould 1200
The determination of the position of 110.It addition, directing pin 1210 is to be inserted into the first through hole of heat-radiating substrate 110
The state of 116 persistently provides support, thus prevents the buckling phenomenon of heat-radiating substrate 110 in technique, thus
The flatness of heat-radiating substrate 110 can be maintained.
Wire bonding sequence needed for lead frame 130 and semiconductor chip 120 both can be as previously mentioned
Implement the most in advance, it is also possible to the most first by heat-radiating substrate 110
The first through hole 116 be inserted into bottom injection mould 1200 directing pin 1210 after perform.
Fig. 4 c represents top injection mould 1100 is arranged at step S300 on bottom injection mould 1200.
Top injection mould 1100 is formed with more than one directing pin 1110 towards vertically lower section is prominent, described
More than one directing pin 1110 is corresponding to the directing pin 1210 of bottom injection mould 1200.By this directing pin
1110 directing pin 1210 being arranged to bottom injection mould 1200 coordinate along straight line.Therefore,
In order to top injection mould 1100 is placed in bottom injection mould 1200, directing pin 1100 should be from top
The inner surface of injection mould 1100 extends at the directing pin 1210 of bottom injection mould 1200.Alternatively,
Directing pin 1110 is formed in its bottom and combines projection 1111, and this combines projection 1111 and is inserted into formation
In the engagement groove 1211 of the directing pin 1210 of bottom injection mould 1200, thus help top injection mould 1100
The determination (with reference to Fig. 4 b) of position.
The directing pin 1210 arranged along straight line and directing pin 1110 are in follow-up injection-moulding step
More than one second through hole 156 can be made to form (ginseng along the thickness direction of injection molding part 150
According to Fig. 4 e).
Fig. 4 d schematically illustrates step S400 that injection molding part 150 is formed.Heat-radiating substrate 110
Inserted by the directing pin 1210 of bottom injection mould 1200, top injection mould 1100 and bottom injection mould
1200 is fit.Then, injected molded polymeric material is injected into mould 1000 inside and fills mould inside sky
Between, injected molded polymeric material such as can use the epoxy-plastic packaging material that the thermal conductivity being widely known is higher.
If injection molding processes terminates, then top encapsulation part 100 is taken off from mould 1000 by the present invention
Mould.Top encapsulation part 100 by injection molding part 150 forming step S400 at injection molding part
More than one second through hole 156 (with reference to Fig. 4 e) is formed in 150.Second through hole 156 be exactly
Due to 2 directing pin 1110,1210 arranged with mated condition in injection molding part forming step S400
Exist without the region filled by epoxy-plastic packaging material.
After by top encapsulation part 100 demoulding, the present invention can also additionally include that molded body burr is removed
Operation, this operation is used for removing because being noted by top injection mould and bottom injection mould or injected molded polymeric material
Injected molded polymeric material that entrance flows out without strategic point and top encapsulation part 100 outer surface produce
Molded body burr.Molded body burr may cause metal lining bad and top envelope in subsequent handling
Engagement state between dress portion 100 and bottom radiating part 200 is bad.
Fig. 4 e represents the number of assembling steps S500 of top encapsulation part 100 and bottom radiating part 200.
Top encapsulation part 100 is formed with the first through hole 116 by heat-radiating substrate 110 and injection mo(u)lding portion
The through hole 160 that second through hole 156 of part 150 is constituted.Bottom radiating part 200 is arranged as and top
The lower surface of encapsulation part 100, heat-radiating substrate 110 composition surface adjacent.As required, bottom radiating part
Joint elements or thermally conductive grease can be additionally coated with between body top and the composition surface of heat-radiating substrate of 200
(thermal grease).Then, the more than one rod member 216 of bottom radiating part 200 is arranged at
The lower section of the bottom of through hole 160 that is first through hole 116.Along with bottom radiating part 200 moves upward
It is dynamic that (or top encapsulation part 100 moves downwards, also or bottom radiating part 200 and top encapsulation part
100 move towards), rod member 216 is fully inserted through in the inside of through hole 160, so that bottom heat radiation
The upper surface in portion 200 is reliably formed face with the lower surface of top encapsulation part 100 and contacts, thus can be by
The heat resulting from top encapsulation part 100 is discharged into outside by bottom radiating part 200.Seal on top
The high heat produced in dress portion 100 can also be sealed from top by the rod member 216 of bottom radiating part 200
The upper surface release in dress portion 100.
In an embodiment of the present invention, owing to arranging bottom in the region corresponding to semiconductor chip bottom
Radiating part, therefore can eliminate rapidly the heat production being derived from semiconductor chip, is then possible not only to improve power
The reliability of the operation of module package, but also can ensure between top encapsulation part and bottom radiating part
Good bonding state.
Below describe the present invention in detail by specific embodiment, but this is intended merely to illustrate this
Invention, is not limited thereto, in this area according to power module package part of the present invention and preparation method thereof
Its enforcement deformation or improvement can be in the range of the technological thought of the present invention by the personnel with general knowledge
It is self-evident.
The simple deformation of the present invention or change belong to the scope of the present invention, will by claims
Understand the concrete protection domain of the present invention.
Claims (18)
1. a power module package part, including:
Top encapsulation part, has the more than one through hole that through-thickness is formed；
Bottom radiating part, has main body and more than one rod member, and rod member more than one is described
The upper surface of main body extends towards vertical direction, and described bottom radiating part is arranged as and described top encapsulation part
Lower surface forms face contact,
Wherein, the rod member of described bottom radiating part is inserted through in the through hole of described top encapsulation part.
2. power module package part as claimed in claim 1, wherein, the length of the extension of described rod member
Formation length equal to or more than described through hole.
3. power module package part as claimed in claim 1, wherein, the rod member of described bottom radiating part
It is arranged in the position corresponding with the through hole of described top encapsulation part.
4. power module package part as claimed in claim 1, wherein, described top encapsulation part includes:
Heat-radiating substrate, through-thickness is formed with more than one first through hole；
Semiconductor chip, is mounted on the attachment face of described heat-radiating substrate；
Lead frame, electrically connects with described heat-radiating substrate or semiconductor chip, and prominent to outside；
Injection molding part, encapsulates described semiconductor chip and heat-radiating substrate, and through-thickness is formed
There is more than one second through hole.
5. power module package part as claimed in claim 4, wherein, described semiconductor chip or heat radiation
Substrate is electrically connected with described lead frame by conductive pins.
6. power module package part as claimed in claim 4, wherein, described injection molding part is the closeest
Seal the lower surface of described heat-radiating substrate.
7. power module package part as claimed in claim 4, wherein, described upper package through
Hole is by being directed at the first through hole of described heat-radiating substrate with the second through hole of described injection molding part
Formed for straight line.
8. power module package part as claimed in claim 1, wherein, described bottom radiating part is by dispelling the heat
Device is constituted, and the main body of described bottom radiating part has multiple radiating fin in bottom.
9. a manufacture method for power module package part, comprises the steps:
First step, it is provided that through-thickness is formed with the heat-radiating substrate of more than one first through hole；
Second step, is loaded into the bottom injection mould of mould by described heat-radiating substrate；
Third step, is arranged at the top injection mould of described mould on the injection mould of described bottom；
4th step, forms top encapsulation part in injected molded polymeric material is injected into described mould；
5th step, assembles described top encapsulation part with bottom radiating part.
10. the manufacture method of power module package part as claimed in claim 9, wherein, described mould
Including:
Bottom injection mould, has towards more than one directing pin the most protruding above；
Top injection mould, has what the directing pin with described bottom injection mould highlighted towards vertically lower section accordingly
More than one directing pin.
The manufacture method of 11. power module package parts as claimed in claim 9, wherein, described
In two steps, the directing pin of described bottom injection mould is inserted through the first through hole in described heat-radiating substrate.
The manufacture method of 12. power module package parts as claimed in claim 9, wherein, described
In two steps, the underside view of part of described heat-radiating substrate is to form face with described bottom injection mould to contact.
The manufacture method of 13. power module package parts as claimed in claim 10, wherein, described
In three steps, make the directing pin of the described bottom injection mould directing pin with described top injection mould mutually along one
Bar is fitted a straight line.
The manufacture method of 14. power module package parts as claimed in claim 9, wherein, described
In four steps, described injection molding part forms the second through hole along the thickness direction of this injection molding part.
The manufacture method of 15. power module package parts as claimed in claim 14, wherein, described heat radiation
First through hole of substrate is directed at along straight line with the second through hole of described injection molding part.
The manufacture method of 16. power module package parts as claimed in claim 9, wherein, described bottom
Radiating part includes:
Main body, has smooth top；
Multiple radiating fins, are provided to the bottom of described main body；
More than one rod member, extends towards vertical direction on the top of described main body.
The manufacture method of 17. power module package parts as claimed in claim 16, wherein, described
In five steps, the rod member of described bottom radiating part is inserted through the through hole of described top encapsulation part.
The manufacture method of 18. power module package parts as claimed in claim 10, wherein, described bottom
The directing pin of injection mould has engagement groove in upper end, and the directing pin of top injection mould has in bottom
In conjunction with projection.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2014-0131532 | 2014-09-30 | ||
| KR1020140131532A KR20160038440A (en) | 2014-09-30 | 2014-09-30 | Power module package and method of fabricating thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105990275A true CN105990275A (en) | 2016-10-05 |
| CN105990275B CN105990275B (en) | 2019-01-04 |
Family
ID=55789619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510090493.7A Expired - Fee Related CN105990275B (en) | 2014-09-30 | 2015-02-27 | Power module package part and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20160038440A (en) |
| CN (1) | CN105990275B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108000798A (en) * | 2017-12-13 | 2018-05-08 | 陕西宝成航空仪表有限责任公司 | Suitable for the miniature conductive ring ring body forming method of electrodeposition technology manufacture |
| CN110168308A (en) * | 2017-01-13 | 2019-08-23 | 恩普乐股份有限公司 | Mark carrying unit and its manufacturing method |
| US11302597B2 (en) | 2017-09-21 | 2022-04-12 | Mitsubishi Electric Corporation | Semiconductor device, and power conversion device including the semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102385112B1 (en) * | 2020-07-27 | 2022-04-11 | 한국생산기술연구원 | Heat dissipation structure of FR4 PCB for power semiconductor device |
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| CN110168308A (en) * | 2017-01-13 | 2019-08-23 | 恩普乐股份有限公司 | Mark carrying unit and its manufacturing method |
| US11302597B2 (en) | 2017-09-21 | 2022-04-12 | Mitsubishi Electric Corporation | Semiconductor device, and power conversion device including the semiconductor device |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN105990275B (en) | 2019-01-04 |
| KR20160038440A (en) | 2016-04-07 |
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