CN212392243U - Transistor power module packaging structure - Google Patents

Transistor power module packaging structure Download PDF

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Publication number
CN212392243U
CN212392243U CN202021715393.1U CN202021715393U CN212392243U CN 212392243 U CN212392243 U CN 212392243U CN 202021715393 U CN202021715393 U CN 202021715393U CN 212392243 U CN212392243 U CN 212392243U
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China
Prior art keywords
lead frame
copper
power module
based resin
resin layer
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CN202021715393.1U
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Chinese (zh)
Inventor
赵承贤
李鑫
颜志进
刘浩
周新龙
盘伶子
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Gree Electric Appliances Inc of Zhuhai
Zhuhai Gree Xinyuan Electronics Co Ltd
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Gree Electric Appliances Inc of Zhuhai
Zhuhai Gree Xinyuan Electronics Co Ltd
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Priority to CN202021715393.1U priority Critical patent/CN212392243U/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Abstract

The utility model provides a transistor power module packaging structure, which comprises a lead frame, a copper-based resin radiating fin, a plurality of chips and an epoxy resin plastic package body; the chips are arranged on the lead frame, the copper-based resin radiating fins are attached to the lead frame, and the epoxy resin plastic package body is wrapped on the outer sides of the lead frame, the chips and the copper-based resin radiating fins. The lead frame and the copper-based resin radiating fins are adopted to replace the traditional DBC substrate, the condition that the thermal expansion coefficient is not matched can be effectively avoided, the condition that the transistor is warped is avoided, large-area bubbles generated by welding are avoided, the epoxy resin is adopted for pressure injection packaging, the air tightness and the reliability of the transistor can be effectively improved, and the reduction of the heat dissipation performance and the air tightness caused by the fact that the inside of the transistor is hardened in a high-temperature environment to generate bubbles is avoided.

Description

Transistor power module packaging structure
Technical Field
The utility model relates to a transistor power module encapsulates technical field, in particular to transistor power module packaging structure.
Background
The packaging structure of the conventional IGBT (Insulated Gate Bipolar Transistor) power module adopts a plastic housing encapsulation structure. This package structure results in a large transistor volume.
The traditional IGBT power module packaging structure adopts pouring sealant, and the packaging mode of the pouring sealant leads to larger volume of the IGBT power module. In addition, the heat conductivity in the air is lower than that in the pouring sealant due to the fact that the air is inside the air, so that the heat dissipation performance of the product is poor, and further the transistor fails.
In addition, the CTE (coefficient of thermal expansion) mismatch brought by the DBC (direct copper clad) substrate adopted by the conventional IGBT power module packaging structure leads to the problem of transistor warpage and the problem of large bubble rate generated by large-area DBC soldering.
SUMMERY OF THE UTILITY MODEL
In view of the above, it is desirable to provide a transistor power module package structure.
A transistor power module package structure, comprising: the chip package comprises a lead frame, a copper-based resin radiating fin, a plurality of chips and an epoxy resin plastic package body;
the chips are arranged on the lead frame, the copper-based resin radiating fins are attached to the lead frame, and the epoxy resin plastic package body is wrapped on the outer sides of the lead frame, the chips and the copper-based resin radiating fins.
In one embodiment, the copper-based resin heat sink includes a copper-based layer, a first resin layer, and a second resin layer sequentially connected in a stacked manner, the second resin layer being connected to the lead frame.
In one embodiment, the curing rate of the first resin layer and the curing rate of the second resin layer are set differently.
In one embodiment, the thickness of the first resin layer and the thickness of the second resin layer are equal.
In one embodiment, the copper-based layer has a thickness of 0.3mm to 0.5 mm.
In one embodiment, the thickness of the first resin layer is 75 μm to 95 μm.
In one embodiment, the thickness of the second resin layer is 75 μm to 95 μm.
In one embodiment, each of the chips is disposed on one surface of the lead frame, and the copper-based resin heat sink is attached to the other surface of the lead frame.
In one embodiment, the copper-based resin heat sink is thermocompression bonded to the lead frame.
In one embodiment, the lead frame is provided with a U-shaped groove at a position close to the edge.
According to the transistor power module packaging structure, the traditional DBC substrate is replaced by the lead frame and the copper-based resin radiating fins, the condition that the thermal expansion coefficient is not matched can be effectively avoided, the situation that the transistor is warped is avoided, large-area bubbles generated by welding are avoided, the epoxy resin is adopted for pressure injection packaging, the air tightness and the reliability of the transistor can be effectively improved, and the situation that the heat dissipation performance and the air tightness are reduced due to the fact that the inside of the transistor is hardened in a high-temperature environment to generate bubbles is avoided.
Drawings
FIG. 1 is a schematic diagram of a directional structure of a transistor power module package structure according to an embodiment;
FIG. 2 is a schematic diagram of a transistor power module package structure in another direction without packaging in an embodiment;
FIG. 3 is a schematic view showing a directional structure of a copper-based resin heat sink in one embodiment;
FIG. 4 is a schematic diagram of a lead frame in one embodiment;
FIG. 5 is a flow diagram illustrating a method for packaging a transistor power module in accordance with one embodiment;
FIG. 6 is a schematic diagram of a medium pressure injection molding process of a transistor power module packaging method in one embodiment;
FIG. 7 is a schematic flow chart illustrating the process of fabricating a transistor power module in one embodiment;
FIG. 8 is a logic diagram of an internal circuit of the transistor power module in one embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not represent the only embodiments.
Example one
In this embodiment, as shown in fig. 1 and fig. 2, a transistor power module package structure 10 is provided, which includes: the lead frame 100, the copper-based resin heat sink 200, the chips 300 and the epoxy resin plastic package body 400; each chip is disposed on the lead frame 100, the copper-based resin heat sink 200 is attached to the lead frame 100, and the epoxy resin molding compound 400 is wrapped on the outer sides of the lead frame 100, each chip 300, and the copper-based resin heat sink 200.
Specifically, the lead frame 100 is used to support each chip 300, and the chips 300 on the lead frame 100 include an IGBT chip 310, an FRD (current diode) chip 320, and an NTC (thermistor) chip 330. The IGBT chip may also be a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) chip. The chips are soldered and fixed on the lead frame 100, and the chips are connected by wires 110, and the chips are connected with the lead frame 100 by wires, for example, the wires 110 are aluminum wires. For example, the chips are soldered to the lead frame 100, and the chips are fixed to the lead frame 100 by silver paste. For example, the lead is an aluminum wire, and the chips are connected by the aluminum wire. In this embodiment, the IGBT, FRD, and NTC thermistor chips are first fixed on the lead frame 100 by solder paste printing or silver paste printing die bonding, and then electrically connected between the chips and the lead frame 100 by aluminum wire welding.
In this embodiment, the copper-based resin heat sink 200 is also referred to as a heat conducting and insulating copper-based resin heat sink 200, and the copper-based resin heat sink 200 is attached to the surface of the lead frame 100 in a hot-press connection manner, because the copper-based resin heat sink 200 contains metal copper, the metal copper has better heat conductivity and good heat conductivity, and can rapidly guide and dissipate heat of the lead frame 100 and the chip to the outside, so that the whole transistor has better heat dissipation performance. In addition, the copper-based resin heat sink 200 contains resin, and can provide an insulating effect, thereby providing insulation protection between the metal copper in the copper-based resin heat sink 200 and the lead frame 100 and the chip.
In this embodiment, the epoxy resin molding compound 400 is made of epoxy resin, the epoxy resin is molded on the outer sides of the lead frame 100, the copper-based resin heat sink 200 and the chips by a compression molding die, and the epoxy resin is cured to form the epoxy resin molding compound 400, wherein the epoxy resin molding compound 400 covers the outer sides of the copper-based resin heat sink 200 and the chips and covers at least a part of the outer sides of the lead frame 100. In fig. 1, to prevent the epoxy resin molding compound 400 from shielding the components packaged therein and facilitate viewing of the components in the epoxy resin molding compound 400, the epoxy resin molding compound 400 is shown by a dotted line.
The traditional power module adopts the DBC substrate, the warping condition of the transistor is easily caused due to the fact that the thermal expansion coefficients are not matched, and large-area bubbles are easily caused. Compared with the traditional pouring sealant packaging, the epoxy resin is adopted for pressure injection packaging, so that the air tightness and reliability of the transistor can be effectively improved, and the reduction of heat dissipation and air tightness caused by the fact that the transistor is hardened in a high-temperature environment and bubbles are generated inside the transistor is avoided.
In addition, this application adopts NTC thermistor chip to replace traditional type NTC thermistor, and NTC thermistor chip has the characteristics of small volume, high accuracy, high stability, high reliability and quick response, can further make the volume of transistor power module littleer.
In one embodiment, as shown in fig. 1, each of the chips is disposed on one surface of the lead frame 100, and the copper-based resin heat sink 200 is attached to the other surface of the lead frame 100. Specifically, the chips and the copper-based resin heat sinks 200 are respectively disposed on two surfaces of the lead frame 100 facing back, so that on one hand, the copper-based resin heat sinks 200 are prevented from affecting the arrangement of the chips on the lead frame 100, and on the other hand, the copper-based resin heat sinks 200 can well support the lead frame 100 and can quickly guide and dissipate heat of the lead frame 100 and the chips.
In one embodiment, the copper-based resin heat sink 200 is thermocompression bonded to the lead frame 100. In this embodiment, the copper-based resin heat sink 200 is connected to the lead frame 100 by thermocompression bonding. This enables the copper-based resin heat sink 200 to be firmly attached to the lead frame 100.
In one embodiment, as shown in fig. 3, the copper-based resin heat sink 200 includes a copper-based layer 230, a first resin layer 210, and a second resin layer 220 sequentially stacked and connected, the second resin layer 220 being connected to the lead frame 100. In this embodiment, the copper base layer 230, the first resin layer 210 and the second resin layer 220 are sequentially stacked, that is, the copper base layer 230 is connected to one surface of the first resin layer 210, the other surface of the first resin layer 210 is connected to one surface of the second resin layer 220, one surface of the second resin layer 220 opposite to the first resin layer 210 is attached to the lead frame 100, specifically, the second resin layer 220 is attached to the lead frame 100 by hot pressing, and the first resin layer 210 and the second resin layer 220 are made of epoxy resin.
In this embodiment, the copper-based resin heat sink 200 is attached to the lead frame 100 through the second resin layer 220, specifically, the second resin layer 220 is attached to the surface of the lead frame 100 opposite to the chip, and the copper-based layer 230 is located at the outer side, so that the copper-based layer 230 can rapidly and effectively absorb, guide and dissipate heat of the lead frame 100 to the outside, and the heat dissipation efficiency of the lead frame 100 and each chip is effectively improved.
In one embodiment, the curing rate of the first resin layer 210 and the curing rate of the second resin layer 220 are set differently. In this embodiment, the curing rate of the epoxy resin of the first resin layer 210 is different from that of the epoxy resin of the second resin layer 220, so that the first resin layer 210 and the second resin layer 220 can have different adhesiveness and thermal conductivity, for example, the curing rate of the first resin layer 210 is greater than that of the second resin layer 220, so that the first resin layer 210 can be more firmly attached to the lead frame 100, and the first resin layer 210 has higher thermal conductivity, so that heat on the lead frame 100 can be quickly and efficiently absorbed and transferred to the copper base layer 230 through the second resin layer 220.
In one embodiment, the thickness of the first resin layer 210 and the thickness of the second resin layer 220 are equal. By setting the thicknesses of the first resin layer 210 and the second resin layer 220 to be equal, both have similar strength, which is advantageous for improving the structural stability of the copper-based resin heat sink 200.
In other embodiments, the thickness of the first resin layer 210 and the thickness of the second resin layer 220 may be set to be unequal.
In one embodiment, the copper based layer 230 has a thickness of 0.3mm to 0.5 mm.
In one embodiment, the thickness of the first resin layer 210 is 75 μm to 95 μm.
In one embodiment, the thickness of the second resin layer 220 is 75 μm to 95 μm.
In the above embodiment, the thickness of the copper base layer 230 is set to be 0.3mm to 0.5mm, on one hand, the overall thickness of the product can be smaller, and in addition, the copper base layer 230 can have higher strength under the thickness, and can well support the first resin layer 210 and the second resin layer 220, so that the structure of the copper-based resin heat sink 200 is more stable, and on the other hand, the copper-based resin heat sink 200 has better heat dissipation performance. And the thickness of the first resin layer 210 is set to 75 μm to 95 μm, and the thickness of the second resin layer 220 is set to 75 μm to 95 μm, on one hand, it can be better attached to the lead frame 100 and provide insulation between the lead frame 100 and the copper base layer 230, and on the other hand, it makes the copper-based resin heat sink 200 have higher strength.
In one embodiment, the first resin layer 210 is an 85 μm thick epoxy layer having a cure rate of 70% to 90%, the second resin layer 220 is an 85 μm thick epoxy layer having a cure rate of 30% to 60%, and the copper base layer 230 has a thickness of 0.4 mm. In this embodiment, the thickness of the first resin layer 210 is 85 μm, the curing rate is 70% to 90%, the thickness of the first resin layer 210 is 85 μm, and the curing rate is 730% to 60%. In the present embodiment, the strength and heat dissipation efficiency of the copper-based resin heat sink 200 can be further improved, and the copper-based resin heat sink 200 can be more firmly attached to the lead frame 100.
In one embodiment, as shown in fig. 4, the leadframe 100 is provided with a U-shaped slot 106 near the edge. By providing the U-shaped groove 106 at the edge of the lead frame 100, moisture is prevented from entering the interior of the epoxy molding compound 400. In fig. 4, the lead frame 100 is provided with a die bonding position 120 for an IGBT chip, a die bonding position 130 for an FRD chip, and a die bonding position 140 for an NTC thermistor chip, and is also provided with a U-groove 107 for preventing solder from overflowing.
In the second embodiment, the first embodiment of the method,
in this embodiment, as shown in fig. 5, a method for packaging a transistor power module is provided, which includes:
in step 510, each chip of the transistor is fixed on a lead frame.
Specifically, each chip comprises an IGBT chip, an FRD chip and an NTC thermistor chip, in the step, the chips are fixed on a lead frame through a tin paste printing or silver paste printing die bonding process, and then the chips and the lead frame are electrically connected through aluminum wires in a point mode.
Step 520, attaching a copper-based resin heat sink to the lead frame.
In the step, the copper-based resin radiating fin is attached and fixed on one surface of the lead frame, which faces away from the chip.
And 530, injecting epoxy resin on the outer sides of the lead frame, the chips and the copper-based resin radiating fin.
In this step, liquid epoxy resin is injected outside the lead frame, the chips, and the copper-based resin heat sink, so that the epoxy resin covers the chips and the copper-based resin heat sink, and covers at least part of the lead frame.
And 540, curing the epoxy resin to form an epoxy resin plastic package body, wherein the epoxy resin plastic package body is wrapped on the outer sides of the lead frame, the chips and the copper-based resin radiating fin.
Specifically, the epoxy resin is cured to form an epoxy resin plastic package body, and the cured epoxy resin plastic package body encapsulates the chips, the copper-based resin heat sink and at least part of the lead frame, so as to realize the encapsulation of the transistor power module.
In the above embodiment, the lead frame and the copper-based resin heat sink are used to replace the conventional DBC substrate, so that the situation of unmatched thermal expansion coefficients can be effectively avoided, the situation of transistor warpage is avoided, large-area bubbles generated by welding are avoided, the epoxy resin is used for injection molding packaging, the airtightness and reliability of the transistor can be effectively improved, and the reduction of heat dissipation and airtightness caused by the generation of bubbles inside the transistor due to hardening in a high-temperature environment is avoided.
In one embodiment, the step of injection molding an epoxy resin on the outer sides of the lead frame, the chips, and the copper-based resin heat sink includes: and injecting epoxy resin to the outer sides of the lead frame, the chips and the copper-based resin radiating fin.
In this embodiment, an injection molding method is used to inject an epoxy resin on the outer sides of the lead frame, the chips, and the copper-based resin heat sink. For example, an epoxy resin is injected by injection molding to the outside of the lead frame, the chips, and the copper-based resin heat sink. In the embodiment, the epoxy resin is encapsulated by pressure injection through the pressure injection mold, so that bubbles caused by high-temperature hardening can be avoided, the air tightness of the encapsulation can be improved, and the copper-based resin radiating fin and the lead frame are more closely and stably connected, so that the encapsulation effect is better.
As shown in fig. 6, which is a schematic diagram of an injection molding process, before being cured, the epoxy molding compound 400 is coated on the outer sides of the lead frame 100, the chips 300, and the copper-based resin heat sink 200, and the epoxy molding runner 630 injects a fluid epoxy resin into the injection mold through the first trapezoidal injection gate 610 and the second trapezoidal injection gate 630, respectively, so that the epoxy resin is coated on the outer sides of the lead frame 100, the chips 300, and the copper-based resin heat sink 200.
In one embodiment, the attaching the copper-based resin heat sink to the lead frame includes: and adhering the copper-based resin radiating fin to the lead frame in a hot pressing mode.
In this embodiment, the side of the copper-based resin heat sink with the resin is attached to the lead frame in a hot press manner, so that the copper-based resin heat sink can be firmly attached to the lead frame.
In one embodiment, the copper-based resin heat sink includes a copper-based layer, a first resin layer, and a second resin layer sequentially stacked and connected, the curing rate of the first resin layer and the curing rate of the second resin layer being set differently; the attaching the copper-based resin heat sink to the lead frame includes: attaching the second resin layer to the lead frame.
In this embodiment, adopt the hot pressing mode, will the second resin layer is attached to the lead frame, in this embodiment, the material of first resin layer and second resin layer is epoxy, through the mode of hot pressing, can make first resin layer firmly attached in the lead frame one side of chip dorsad.
EXAMPLE III
Please refer to fig. 7, which shows a manufacturing process of a transistor power module, including IGBT DB, FRD DB, NTC DB, Al DB, internal inspection, heat sink attachment, resin molding, resin curing, plating and cutting ribs, testing, printing, and appearance inspection.
Wherein, DB refers to that the chip is fixed on the lead frame by a mode of brushing tin paste or silver paste.
The IGBT refers to an IGBT or MOSFET chip; .
FRD refers to a freewheeling diode chip.
The NTC refers to a thermistor chip. (ii) a
Al WB refers to aluminum wire welding;
the internal inspection refers to the inspection of the internal structure of the product
The heat radiating fin attachment is to attach the high-thermal-conductivity insulating copper-based resin heat radiating fin to the lead frame in a hot pressing mode;
the resin molding is to use epoxy resin to encapsulate a product in a compression molding mode;
post-curing means completely curing the plastic-packaged product;
electroplating and cutting ribs refer to attaching soldering tin to product pins by an electroplating process and separating the product pins;
the test refers to the electrical property test of the product;
the forming and printing refers to forming product pins and identifying information such as product models, batch numbers and the like;
the appearance inspection is to perform appearance inspection on the tested good product.
In this embodiment, the package of the transistor power module is one of the rings of the product manufacturing process of the transistor power module.
The manufacturing process of the transistor power module specifically comprises the following steps: at first with IGBT, FRD and NTC thermistor chip pass through tin cream printing or silver thick liquid printing solid brilliant technology to be fixed on the lead frame, the rethread Al line welding realizes between chip and the chip and between chip and the lead frame some electrical connection, the rethread high heat conduction epoxy fin is attached, then encapsulate through epoxy transfer mould, it uses the casting glue to harden under the high temperature to lead to the inside thermal diffusivity and the gas tightness that produce the bubble reduction product of product to solve traditional power module encapsulation, and reduce the warpage and the bubble rate of product, and reduce the volume of product.
And (3) designing an electrical structure of the product: the structure consists of 6 IGBTs or MOSFETs, 6 freewheeling diodes FRDs and 1 NTC thermistor chip, wherein each 3 IGBTs or MOSFETs and 3 freewheeling diodes FRDs are connected in parallel to form an upper bridge and a lower bridge, and a half-bridge output U/V/W phase circuit is formed. The chip is welded on a PAD part of the lead frame by adopting spot welding tin wires or brushing tin paste or spot silver paste, the lead frame is used for partially electrically conducting wires, structurally supporting and radiating a carrier, and the electrical connection between chip electrodes and the lead frame is realized by using an Al wire welding mode.
Frame design: the lead frame adopts solid brilliant PAD position to be the structure that sinks to open the U groove design in PAD position and pin specific position for prevent that soldering tin from overflowing and steam from entering into the product inside through pin and resin combination department, cause the product inefficacy.
The manufacturing process is realized as follows: as shown in fig. 6 and 7, the IGBT die bonding, FRD die bonding, and NTC thermistor chip die bonding were performed by a solder paste printing process, then Al wire bonding was performed, and then an internal inspection was performed. Then, the novel compression-injection mold packaging power module structure is realized, firstly, the high-heat-conductivity epoxy resin radiating fin is attached to the lead frame through a hot pressing process, then, a product with the attached radiating fin is placed in the mold cavity to be subjected to epoxy resin compression-injection mold plastic packaging, and the injection gate is designed into two parts and is designed into a trapezoidal structure. And finally, carrying out the packaging test of the rear section.
The internal circuit diagram of the transistor power module manufactured by the above process is shown in fig. 8, wherein the components in the diagram are respectively:
collector 1(C1) at 1, collector 2(C2) at 2, and FRD chip at high side at 3;
4 is a high side IGBT chip, 5 is a high side IGBT chip gate pole (G1);
6 is a high-side IGBT chip emitter (E1), and 7 is a half-bridge output U/V/W phase;
8 is a low-side IGBT chip, 9 is a low-side IGBT chip gate pole (G2);
a low-side FRD chip 10 and a low-side IGBT chip emitter 11 (E2);
12 is a low-side IGBT chip emitter (E3), 13 is an NTC thermistor chip P pole;
14 is NTC thermistor chip, 15 is NTC thermistor chip N utmost point.
The utility model provides an in the encapsulation of high-power IGBT module is used to compression moulding mould packaging technology, form a novel compression moulding mould packaging power modular structure, and adopt new packaging technology to realize, improve the gas tightness and the reliability of product, solve traditional power module packaging and use the casting glue to take place the sclerosis under high temperature and lead to the inside production bubble of product to reduce the thermal diffusivity and the gas tightness of product, and reduce the warpage and the bubble rate of product, and reduce the volume of product.
In practical use of the system, the following effects can be realized:
1. the novel compression-injection mold packaging structure solves the problem that the traditional IGBT module packaging structure is large in size;
2. the novel compression-injection mold packaging structure solves the problems that the traditional IGBT module packaging structure uses pouring sealant to harden at high temperature, so that bubbles are generated inside the product to reduce the heat dissipation and air tightness of the product;
3. the novel compression-molded packaging structure is adopted to solve the problems of product warping caused by CTE mismatching caused by the DBC substrate used in the traditional IGBT module packaging structure and large bubble rate caused by large-area DBC welding;
and 4, the NTC thermistor chip replaces the traditional NTC thermistor, so that small volume, high precision, high stability, high reliability and quick response are realized.
5. A feasible structure design method and a production process are provided;
6. novel transfer mould encapsulation power module structure adopts an epoxy pressure moulding technology, at first with IGBT, FRD and NTC thermistor chip pass through tin cream printing or silver thick liquid printing solid brilliant technology and fix on the lead frame, the welding of rethread Al line realizes between chip and the chip and between chip and the lead frame some electrical connection, the high heat conduction epoxy fin of rethread is attached, then encapsulate through epoxy transfer mould, solve traditional power module encapsulation and use the casting glue to harden under the high temperature and lead to the inside thermal diffusivity and the gas tightness that produce the bubble and reduce the product of product, and reduce the warpage and the bubble rate of product, and reduce the volume of product.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the utility model. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A transistor power module package structure, comprising: the chip package comprises a lead frame, a copper-based resin radiating fin, a plurality of chips and an epoxy resin plastic package body;
the chips are arranged on the lead frame, the copper-based resin radiating fins are attached to the lead frame, and the epoxy resin plastic package body is wrapped on the outer sides of the lead frame, the chips and the copper-based resin radiating fins.
2. The transistor power module package structure of claim 1, wherein the copper-based resin heat sink comprises a copper-based layer, a first resin layer and a second resin layer sequentially stacked and connected, the second resin layer being connected with the lead frame.
3. The transistor power module package structure of claim 2, wherein a curing rate of the first resin layer and a curing rate of the second resin layer are differently set.
4. The transistor power module package structure of claim 2, wherein a thickness of the first resin layer and a thickness of the second resin layer are equal.
5. The transistor power module package structure of claim 2, wherein the copper-based layer has a thickness of 0.3mm to 0.5 mm.
6. The transistor power module package structure of claim 2, wherein the thickness of the first resin layer is 75 μ ι η to 95 μ ι η.
7. The transistor power module package structure of claim 2, wherein the thickness of the second resin layer is 75 μ ι η to 95 μ ι η.
8. The transistor power module package structure according to any one of claims 1 to 7, wherein each of the chips is disposed on one side of the lead frame, and the copper-based resin heat sink is attached to the other side of the lead frame.
9. The transistor power module package structure according to any one of claims 1 to 7, wherein the copper-based resin heat sink is thermocompression bonded to the lead frame.
10. The transistor power module package structure of claim 1, wherein a U-shaped slot is disposed near an edge of the lead frame.
CN202021715393.1U 2020-08-17 2020-08-17 Transistor power module packaging structure Active CN212392243U (en)

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