CN105977362A - High-efficiency heat-dissipation integrated LED packaging structure and method - Google Patents
High-efficiency heat-dissipation integrated LED packaging structure and method Download PDFInfo
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- CN105977362A CN105977362A CN201610498148.1A CN201610498148A CN105977362A CN 105977362 A CN105977362 A CN 105977362A CN 201610498148 A CN201610498148 A CN 201610498148A CN 105977362 A CN105977362 A CN 105977362A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 11
- 230000017525 heat dissipation Effects 0.000 title abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 68
- 229920005989 resin Polymers 0.000 claims abstract description 68
- 238000002493 microarray Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000005855 radiation Effects 0.000 claims description 96
- 238000001816 cooling Methods 0.000 claims description 16
- 238000005538 encapsulation Methods 0.000 claims description 12
- 238000004382 potting Methods 0.000 claims description 9
- 241000218202 Coptis Species 0.000 claims description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 238000012856 packing Methods 0.000 description 7
- 230000010354 integration Effects 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- PXFBZOLANLWPMH-UHFFFAOYSA-N 16-Epiaffinine Natural products C1C(C2=CC=CC=C2N2)=C2C(=O)CC2C(=CC)CN(C)C1C2CO PXFBZOLANLWPMH-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a high-efficiency heat-dissipation integrated LED packaging structure and method, and belongs to the technical field of semiconductor device manufacturing. The device comprises a packaging substrate, an integrated circuit layer, a heat radiator, an LED chip and packaging resin from the bottom to the top. The integrated circuit layer is laid on the packaging substrate, and the heat radiator comprises a micro-array animi resin heat-dissipation conduit and a heat-dissipation working medium. The LED chip is electrically connected with the integrated circuit layer laid on the substrate through a gold line, and finally a packaged structure is externally connected with a heat-dissipation system. According to the invention, the integrated packaged structure substrate is provided with the micro-array animi resin heat-dissipation conduit in a laying manner. Compared with a conventional heat-dissipation structure, the heat radiator employs the heat-dissipation conduit made of animi resin, and the heat-dissipation conduit is well compatible with subsequent packaging region, so no layered crack is caused. More importantly, the heat radiator is closer to the chip, thereby effectively reducing the junction temperature, and prolonging the service life of the integrated LED packaging structure.
Description
Technical field
The present invention relates to a kind of high efficiency and heat radiation integrated LED encapsulating structure and method for packing thereof, belong to light emitting semiconductor device and manufacture skill
Art field.
Background technology
Light emitting diode (LED) uses constant-current driving with it, have that energy-conserving and environment-protective, volume be little, low-power consumption, length in service life and
Obtain greatly development.With regard to current semiconductor fabrication, high-power integrated LED can only be changed the input power of about 15%-20% and be
Luminous energy, the 80%-85% of its input power dissipates with the form of heat energy, and this can cause the temperature rise lighting LED component serious, and
PN junction high temperature can cause tying the adverse consequences of a series of shortening LED life such as aging, fluorescent material is aging.And to high-power integrated LED
The improvement of encapsulating structure heat dispersion has become the importance of encapsulation technology.
Integrated encapsulation structure is pursued by many encapsulation enterprises with its efficient performance and relatively low cost manufacture, but its light efficiency,
The integrity problems such as life-span cannot be ensured the most always reliably, integration packaging can chip bigger for one or two dimensions,
Being divided into some small-size chips, that can do is smaller, therefore the highest in the requirement of radiating efficiency.Vertical angle is seen
Coming, integration packaging can reach reasonable efficiency under limited volume, so it will in horizontal and rectilinear heat radiation
Ask reasonable performance.At present integrated LED packaged light source is used mostly aluminium base as material, and aluminium base thermal resistance is big, reliably
Property the highest, light decay, dead lamp phenomenon easily occur, and the thermal diffusivity of integration packaging also have much room for improvement, the cumulative heat of COB light source is concentrated
Spend higher, if heat of light source can not be derived in time, light source life will be caused to reduce；The most also just like carrying out to encapsulation integration module
The mode of air-conditioning heat dissipation, the integration packaging screen of height heat radiation may have been carried out lowering the temperature by a relatively large margin by this way, but overall package becomes
This notable rising, and the problem that can not fundamentally improve heat radiation.
Patent CN201975421U provides a kind of novel LED encapsulation structure, including heat sink component, LED chip, optically focused
Lens and substrate.Described LED chip is fixed on the top of substrate by adhesive material, and described heat sink component is by heat conductive silica gel gluing
In the bottom of substrate, described heat sink component is the radiating piece of a micro heat pipe structure, and this is heat sink, and component includes: in the tubulose of closing
Chamber, being fixedly installed on the wick of this tubular intracavity wall and flow into the thermal medium of inner chamber, described tubular intracavity is arranged at heat sink
The inside of component.
Patent CN103824928A provides a kind of LED lateral fluid heat radiation COB light source and packaging technology thereof, including micro-battle array
Row heat pipe flat board, copper coating, silver coating, line layer, insulating lacquer layer are sequentially compounding.Described microarray heat pipe flat board external form
In lamellar, microarray heat pipe flat board uses aluminium cold-drawn one-body molded, and the internal distributive plural root side by side of microarray heat pipe flat board is only
The vertical fine array channel run, fills working medium in passage, two ends seal.Microarray heat pipe planar surface heat absorption under this invention
After, working medium evaporation is back to evaporator section again after transferring heat to rapidly condensation segment heat release and continues heat absorption, thus this is repeated is
Row continuous phase transistion heat and mass transfer process.
Although above prior art obtains certain effect in radiating treatment, but is all from macroscopic perspective, remain at chip
Carrying out heat radiation processing on base plate for packaging or base, radiating effect is the most not ideal enough.
Summary of the invention
The present invention is directed to the deficiency that prior art exists in terms of integrated heat dissipation, it is provided that a kind of high efficiency and heat radiation integrated LED encapsulation knot
Structure, and with the method for packing of this Structure adaptation.
A kind of high efficiency and heat radiation integrated LED encapsulating structure, includes base plate for packaging, integrated circuit layer, radiator, LED from bottom to top
Chip, potting resin, integrated circuit layer is layed on base plate for packaging, and LED chip is integrated be laid on substrate by gold thread
Circuit layer is electrically connected with.Radiator is positioned on base plate for packaging and integrated circuit layer, owing to integrated circuit layer is not to be covered with completely
The whole surface area of base plate for packaging, but according to circuit design cabling, thus between direction tendency and the integrated circuit layer of radiator
May intersect, it is also possible to without occuring simultaneously, be then to be positioned at above circuit layer in radiator vertical direction if intersection.
According to currently preferred, radiator includes microarray animi resin heat radiation conduit and heat radiation working medium, and heat radiation working medium filling is in micro-
In array animi resin heat radiation conduit.
It is further preferred that microarray animi resin heat radiation conduit is provided with arrival end near base plate for packaging marginal position and mouth goes out end.
It is further preferred that arrival end and mouth go out end is respectively arranged on base plate for packaging opposite sides.
It is further preferred that the longitudinal section of the microarray animi resin heat radiation conduit part on base plate for packaging is semicircular ring, microarray
Animi resin heat radiation conduit is annular at the arrival end of base plate for packaging marginal position and the longitudinal section of the port of export.On base plate for packaging
Microarray animi resin heat radiation conduit be semi-annular shape, the material of microarray animi resin heat radiation conduit own is animi resin, is a kind of envelope
Dress glue, can be directly bonded on integrated circuit layer/base plate for packaging；The longitudinal section of arrival end and the port of export is annular, it is simple to
External refrigeration piping.
It is further preferred that the inner circle radius of semicircular ring is H, H span is 50 μm-80 μm, the exradius of semicircular ring
With the difference of inner circle radius be L, L span be 15-20 μm.
It is further preferred that be provided with back cover layer below semicircular ring, back cover layer is hard resin layer.
It is further preferred that the span that back cover layer thickness is D, D is 2 μm-3 μm.Back cover layer is in order to working medium of dispelling the heat
With integrated circuit layer, base plate for packaging isolation.
It is further preferred that high efficiency and heat radiation integrated LED encapsulating structure also includes external cooling system, external cooling system and entrance
End is connected with the port of export.Also can be connected between port and port when polylith substrate mounting, the most external cooling system.
It is further preferred that the paving mode that the microarray animi resin heat radiation conduit of described radiator is on base plate for packaging is and connects
Structure or S type structure.
The present invention, in order to make radiator closer to chip position, is preferably dispelled the heat, and uses and uses encapsulation animi resin at mounting structure
The middle mode of hot channel of setting up is to chip cooling, and owing in packaging body, space structure is narrow and small, common radiating mode is in encapsulation
Arranging radiator structure outside body structure, the present invention uses packaging adhesive material animi resin directly to set up hot channel in packaging body, due to
Hot channel itself is packaging plastic so not interfering with the fine and close reliability of whole encapsulating structure, will not produce impact to going out light simultaneously.
A kind of method for packing preparing above-mentioned high efficiency and heat radiation integrated LED encapsulating structure, comprises the following steps:
(1) on base plate for packaging, integrated circuit layer is laid；
(2) microarray animi resin heat radiation conduit is laid on the base plate for packaging of the integrated circuit layer laid in step (1), close
Base plate for packaging marginal position stays remainings one section of microarray animi resin heat radiation conduit arrival end and mouth and goes out end；
(3) in step (2) described microarray animi resin heat radiation conduit, heat radiation working medium is filled；
(4) in step (3) described structure, fix LED chip and carry out routing, making between LED chip and integrated circuit layer
It is electrically connected with；
(5) in step (4) described structure, carry out potting resin embedding, form complete integrated LED encapsulating structure；
(6) by step (5) the described integrated LED external cooling system of encapsulating structure；Or repeat step (1) to (5) at least
Once, the arrival end between the adjacent integrated LED encapsulating structure that will obtain is connected with the port of export, forms integrated LED encapsulation knot
The module units of structure, is connected the arrival end of module units, the port of export with external cooling system.
Present invention have an advantage that
Heat radiation working medium is filled, then by integrated in integration packaging substrate is laid microarray animi resin heat radiation conduit, heat radiation conduit
Encapsulating structure is connected with external radiator, compares more conventional radiator structure, and it is scattered that radiator of the present invention uses animi resin to prepare microarray
Heat pipe, can be good at affine with later stage potting resin embedding, does not haves the problems such as layering crack；Topmost, heat radiation
Heat radiation working medium is filled so that radiator, closer to chip position, effectively reduces junction temperature, it is ensured that package material and chip in conduit
Service life.
Accompanying drawing explanation
Fig. 1 is step of the present invention (1) structural representation；
Fig. 2 be step of the present invention (2) microarray animi resin heat radiation conduit be parallel-connection structure lay structural representation；
Fig. 3 is the structural representation that step of the present invention (2) the microarray S-type structure of animi resin heat radiation conduit is laid；
Fig. 4 is the longitudinal section schematic diagram of the microarray animi resin heat radiation conduit part on base plate for packaging；
In figure, 1, base plate for packaging；2, integrated circuit layer；3, radiator；4, arrival end；5, the port of export；6, microarray
Animi resin heat radiation conduit；7, heat radiation working medium.
Detailed description of the invention
Below in conjunction with Figure of description and embodiment, the present invention is described in detail, but is not limited to this.
As Figure 1-4.
Embodiment 1
A kind of high efficiency and heat radiation integrated LED encapsulating structure, includes base plate for packaging, integrated circuit layer, radiator, LED from bottom to top
Chip, potting resin, integrated circuit layer is layed on base plate for packaging, and LED chip is integrated be laid on substrate by gold thread
Circuit layer is electrically connected with.Radiator includes microarray animi resin heat radiation conduit and heat radiation working medium, and heat radiation working medium filling is hard in microarray
In resin heat radiation conduit.The microarray animi resin heat radiation conduit of radiator paving mode on base plate for packaging is parallel-connection structure, as
Shown in Fig. 2.
Radiator is positioned on base plate for packaging and integrated circuit layer, owing to integrated circuit layer is not be covered with base plate for packaging completely whole
Individual surface area, but according to circuit design cabling, thus may intersect, also between the direction tendency of radiator and integrated circuit layer
May be then to be positioned at above circuit layer in radiator vertical direction if intersection without occuring simultaneously.
Embodiment 2
A kind of high efficiency and heat radiation integrated LED encapsulating structure, as described in Example 1, difference is its structure, and microarray animi resin dissipates
Heat pipe is provided with arrival end and mouth near base plate for packaging marginal position and goes out end, and arrival end goes out end with mouth, and to be respectively arranged on base plate for packaging relative
Both sides, as shown in Figure 2,3.
Embodiment 3
A kind of high efficiency and heat radiation integrated LED encapsulating structure, as described in Example 2, difference is its structure, on base plate for packaging
The longitudinal section of microarray animi resin heat radiation conduit part is semicircular ring, and microarray animi resin heat radiation conduit is at base plate for packaging marginal position
Arrival end and the longitudinal section of the port of export be annular.Microarray animi resin heat radiation conduit on base plate for packaging is semi-annular shape,
The material of microarray animi resin heat radiation conduit own is animi resin, is a kind of packaging plastic, can be directly bonded to integrated circuit layer/encapsulation base
On plate；The longitudinal section of arrival end and the port of export is annular, it is simple to external refrigeration piping.
Embodiment 4
A kind of high efficiency and heat radiation integrated LED encapsulating structure, as described in Example 3, difference is its structure, the inner circle of semicircular ring half
Footpath be H, H value be 80 μm, the exradius of semicircular ring and the difference of inner circle radius be L, L value be 15 μm, such as Fig. 4 institute
Show.
Embodiment 5
A kind of high efficiency and heat radiation integrated LED encapsulating structure, as described in Example 4, difference is its structure, is provided with below semicircular ring
Back cover layer, back cover layer is hard resin layer, as shown in Figure 4.
Back cover layer thickness be the value of D, D be 2 μm.Back cover layer in order to will heat radiation working medium and integrated circuit layer, base plate for packaging every
From.
Embodiment 6
A kind of high efficiency and heat radiation integrated LED encapsulating structure, as described in Example 4, difference is its structure, the inner circle of semicircular ring half
Footpath be H, H value be 50 μm, the exradius of semicircular ring and the difference of inner circle radius be L, L value be 20 μm.
Embodiment 7
A kind of high efficiency and heat radiation integrated LED encapsulating structure, as described in Example 5, difference is its structure, and back cover layer thickness is D,
The value of D is 3 μm.
Embodiment 8
A kind of high efficiency and heat radiation integrated LED encapsulating structure, as described in Example 2, difference is its structure, high efficiency and heat radiation integrated LED
Encapsulating structure also includes that external cooling system, external cooling system are connected with arrival end and the port of export.Also can be at polylith substrate mounting
Time port and port between be connected, the most external cooling system.
Embodiment 9
A kind of high efficiency and heat radiation integrated LED encapsulating structure, as described in Example 1, difference is its structure, the microarray of radiator
Animi resin heat radiation conduit paving mode on base plate for packaging is S type structure, as shown in Figure 3.
Embodiment 10
The method for packing of a kind of high efficiency and heat radiation integrated LED encapsulating structure prepared described in embodiment 4, comprises the following steps:
(1) on base plate for packaging, integrated circuit layer is laid, as Fig. 1 shows structure；
(2) on the base plate for packaging laying integrated circuit layer, microarray animi resin heat radiation conduit is laid in parallel-connection structure, such as Fig. 2
Show structure；The longitudinal section of the microarray animi resin heat radiation conduit part on base plate for packaging is semicircular ring, the inner circle radius of semicircular ring
Being 80 μm, the exradius of semicircular ring and the difference of inner circle radius are 15 μm, firmly set setting up microarray separately near substrate edges position
Fat heat radiation conduit arrival end and the port of export；
(3) in the microarray animi resin heat radiation conduit laid step (2) Suo Shu, heat radiation working medium is filled in parallel-connection structure, such as figure
4 show structure；
(4) in step (3) described structure, fix LED chip and carry out routing, making between LED chip and integrated circuit layer
It is electrically connected with；
(5) in step (4) described structure, carry out potting resin embedding, form complete integrated LED encapsulating structure；
(6) by step (5) the described integrated LED external cooling system of encapsulating structure.
Embodiment 11
The method for packing of a kind of high efficiency and heat radiation integrated LED encapsulating structure prepared described in embodiment 5, comprises the following steps:
(1) on base plate for packaging, integrated circuit layer is laid, as Fig. 1 shows structure；
(2) on the base plate for packaging laying integrated circuit layer, microarray animi resin heat radiation conduit is laid in parallel-connection structure, such as Fig. 2
Show structure；The longitudinal section of the microarray animi resin heat radiation conduit part on base plate for packaging is semicircular ring, is provided with below semicircular ring
Back cover layer, back cover layer is hard resin layer, and back cover layer thickness is 2 μm, and the inner circle radius of semicircular ring is 80 μm, outside semicircular ring
The difference of radius of circle and inner circle radius is 15 μm, set up separately near substrate edges position microarray animi resin heat radiation conduit arrival end and
The port of export；
(3) in the microarray animi resin heat radiation conduit laid step (2) Suo Shu, heat radiation working medium is filled in parallel-connection structure, such as figure
4 show structure；
(4) in step (3) described structure, fix LED chip and carry out routing, making between LED chip and integrated circuit layer
It is electrically connected with；
(5) in step (4) described structure, carry out potting resin embedding, form complete integrated LED encapsulating structure；
(6) by step (5) the described integrated LED external cooling system of encapsulating structure.
Embodiment 12
The method for packing of a kind of high efficiency and heat radiation integrated LED encapsulating structure prepared described in embodiment 5, comprises the following steps:
(1) on base plate for packaging, integrated circuit layer is laid, as Fig. 1 shows structure；
(2) on the base plate for packaging laying integrated circuit layer, microarray animi resin heat radiation conduit is laid in parallel-connection structure, such as Fig. 2
Show structure；The longitudinal section of the microarray animi resin heat radiation conduit part on base plate for packaging is semicircular ring, is provided with below semicircular ring
Back cover layer, back cover layer is hard resin layer, and back cover layer thickness is 2 μm, and the inner circle radius of semicircular ring is 80 μm, outside semicircular ring
The difference of radius of circle and inner circle radius is 15 μm, set up separately near substrate edges position microarray animi resin heat radiation conduit arrival end and
The port of export；
(3) in the microarray animi resin heat radiation conduit laid step (2) Suo Shu, heat radiation working medium is filled in parallel-connection structure, such as figure
4 show structure；
(4) in step (3) described structure, fix LED chip and carry out routing, making between LED chip and integrated circuit layer
It is electrically connected with；
(5) in step (4) described structure, carry out potting resin embedding, form complete integrated LED encapsulating structure；
(6) repeat step (1) to (5) once, altogether obtain two complete integrated LED encapsulating structures, the phase that will obtain
Between adjacent integrated LED encapsulating structure, arrival end is connected with the port of export, forms the module units of integrated LED encapsulating structure, by group
The dress arrival end of unit, the port of export are connected with external cooling system.
Experimental example
Technical scheme described in 5 makes complete integrated LED encapsulating structure according to embodiments of the present invention, i.e. one is packaged with 8*8
Array chip, single chips power is the encapsulating structure of 0.5W.Do not use the encapsulating structure of technical scheme of the present invention, pass through
After 1000 hours burn-in tests, its light decay is at 7%-10%, and uses the heat-dissipation packaging structure of technical solution of the present invention, and light decay only exists
About 4%, substantially increase the light decay life-span of encapsulating structure.
Claims (10)
1. a high efficiency and heat radiation integrated LED encapsulating structure, it is characterised in that include base plate for packaging, integrated circuit from bottom to top
Layer, radiator, LED chip, potting resin, integrated circuit layer is layed on base plate for packaging, and LED chip passes through gold thread and laying
Integrated circuit layer on substrate is electrically connected with.
High efficiency and heat radiation integrated LED encapsulating structure the most according to claim 1, it is characterised in that radiator includes microarray
Animi resin heat radiation conduit and heat radiation working medium, heat radiation working medium filling is in microarray animi resin heat radiation conduit.
High efficiency and heat radiation integrated LED encapsulating structure the most according to claim 2, it is characterised in that microarray animi resin dispels the heat
Conduit is provided with arrival end near base plate for packaging marginal position and mouth goes out end；Preferably, arrival end and mouth go out end and are respectively arranged on encapsulation base
Plate opposite sides.
High efficiency and heat radiation integrated LED encapsulating structure the most according to claim 3, it is characterised in that micro-on base plate for packaging
The longitudinal section of array animi resin heat radiation conduit part is semicircular ring, and microarray animi resin heat radiation conduit is at base plate for packaging marginal position
The longitudinal section of arrival end and the port of export is annular.
High efficiency and heat radiation integrated LED encapsulating structure the most according to claim 4, it is characterised in that the inner circle radius of semicircular ring
Be 50 μm-80 μm for H, H span, the exradius of semicircular ring and the difference of inner circle radius be L, L span be 15-20
μm。
High efficiency and heat radiation integrated LED encapsulating structure the most according to claim 4, it is characterised in that be provided with envelope below semicircular ring
Bottom, back cover layer is hard resin layer.
High efficiency and heat radiation integrated LED encapsulating structure the most according to claim 6, it is characterised in that back cover layer thickness is D,
The span of D is 2 μm-3 μm.
High efficiency and heat radiation integrated LED encapsulating structure the most according to claim 3, it is characterised in that high efficiency and heat radiation integrated LED
Encapsulating structure also includes that external cooling system, external cooling system are connected with arrival end and the port of export.
High efficiency and heat radiation integrated LED encapsulating structure the most according to claim 2, it is characterised in that micro-battle array of described radiator
Row animi resin heat radiation conduit paving mode on base plate for packaging is parallel-connection structure or S type structure.
10. prepare the encapsulation side of high efficiency and heat radiation integrated LED encapsulating structure described in claim 2-9 any one claim for one kind
Method, comprises the following steps that
(1) on base plate for packaging, integrated circuit layer is laid；
(2) on the substrate of step (1) described laying integrated circuit layer, microarray animi resin heat radiation conduit is laid, near base
Plate marginal position sets up microarray animi resin heat radiation conduit arrival end and the port of export separately；
(3) in step (2) described microarray animi resin heat radiation conduit, heat radiation working medium is filled；
(4) in step (3) described structure, fix LED chip and carry out routing, making between LED chip and integrated circuit layer
It is electrically connected with；
(5) in step (4) described structure, carry out potting resin embedding, form complete integrated LED encapsulating structure；
(6) by step (5) the described integrated LED external cooling system of encapsulating structure；Or repeat step (1) to (5) at least
Once, between the adjacent integrated LED encapsulating structure that will obtain, arrival end is connected with the port of export, forms integrated LED encapsulating structure
Module units, the arrival end of module units, the port of export are connected with external cooling system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610498148.1A CN105977362A (en) | 2016-06-29 | 2016-06-29 | High-efficiency heat-dissipation integrated LED packaging structure and method |
Applications Claiming Priority (1)
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