CN105951052A - Magnetron sputtering device - Google Patents
Magnetron sputtering device Download PDFInfo
- Publication number
- CN105951052A CN105951052A CN201610496839.8A CN201610496839A CN105951052A CN 105951052 A CN105951052 A CN 105951052A CN 201610496839 A CN201610496839 A CN 201610496839A CN 105951052 A CN105951052 A CN 105951052A
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- CN
- China
- Prior art keywords
- target
- magnet
- module
- computing module
- sputtering device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
- H01J37/3479—Detecting exhaustion of target material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A magnetron sputtering device comprises a work cavity, a base, a target material and magnets; the base, the target material and the magnets are sequentially arranged in the work cavity from top to bottom; and the multiple magnets are each in a shape of a strip and are horizontally arranged in parallel at intervals. The magnetron sputtering device further comprises a target material consumption monitoring device which comprises laser transceiving devices, a computing module and a magnet adjusting module; the multiple laser transceiving devices are evenly arranged on the base and electrically connected with the computing module; the laser transceiving devices record the laser receiving and transmitting time difference, and the target material consumption amount of a position corresponding to each laser transceiving device is worked out through the computing module; and the magnet adjusting module is electrically connected with the computing module and sequentially adjusts the corresponding magnetic target distance of each laser transceiving device according to the computing result of the computing module. The magnetron sputtering device can accurately monitor the target material consumption amount in real time, accurately adjust the magnetic target distance, improve the sputter coating quality and guarantee the coating uniformity and stability.
Description
Technical field
The present invention relates to technical field of vacuum plating, particularly relate to a kind of magnetic control sputtering device.
Background technology
Magnetron sputtering technique has evolved into one of very important technology in industry plated film.Owing to it has sputter rate height, heavy
Long-pending speed is high, and depositing temperature is low, film quality good etc. advantage, increasingly paid close attention to by the parties concerned.Such as, magnetic control spatters
Technology of penetrating has been applied and has been extended to many production and scientific research field, at electronics, optics, function of surface thin film, thin film phosphor
All it is widely used Deng many aspects.The transparent conducting glass particularly prepared with magnetron sputtering technique is now widely used for putting down
Panel display, solaode, building glass, microwave and radio-frequency shielding fence and the field such as device, sensor.
Magnetic control sputtering device is, by target, substrate carries out plated film, and target is constantly consuming along with using, owing to target is positioned at
In the cavity of magnetic control sputtering device, therefore the actually used consumption at each position of target cannot be monitored, and then cannot be to Magnet and target
The spacing of material (be called for short magnetic target away from) makes corresponding regulation and control.At present, generally use direct current four-point probe to measure method (Rs method) to come
Measure film layer resistance homogeneity, to judge the degree that target consumes, more artificially determine that magnetic target is away from the need of adjusting and specifically adjusting
Whole situation, owing to the method has its result of participation of anthropic factor will necessarily increase uncertainty, causes necessarily away from adjustment to magnetic target
Difficulty.
Summary of the invention
In view of above-mentioned condition, it is necessary to provide a kind of simple in construction, can accurately calculate target consumption and adjust magnetic target away from magnetic control
Sputter equipment, to solve deficiency of the prior art.
The present invention provides a kind of magnetic control sputtering device, including work chamber, substrate, target and Magnet, described substrate, institute
Stating target and described Magnet is from top to bottom set in turn in described work chamber, described Magnet is that multiple strip and level are put down
Between-line spacing is arranged, and described magnetic control sputtering device also includes that target consumes supervising device, and described target consumes supervising device and includes laser
R-T unit, computing module and Magnet adjusting module, described laser transmitting-receiving device is multiple and is arranged at described base uniformly
, described laser transmitting-receiving device is electrically connected with described computing module at the end, the time of described laser transmitting-receiving device record transmitting-receiving laser
Differing from and calculate the target consumption of position corresponding to each described laser transmitting-receiving device by described computing module, described Magnet is adjusted
Mould preparation block is electrically connected with computing module, and described Magnet adjusting module is sequentially adjusted in each according to the result of calculation of described computing module
Magnetic target corresponding to described laser transmitting-receiving device away from.
Further, described substrate being provided with multiple through hole uniformly, the position of described through hole is upper and lower with the position of described Magnet
Correspondence, described laser transmitting-receiving device is arranged in described through hole.
Further, described target consume supervising device also include analog module and display screen, described analog module respectively with institute
Stating display screen, described computing module and described Magnet adjusting module to be electrically connected with, described display screen is arranged at described work
Make on the outer wall of chamber, described computing module is calculated described in described target consumption and the adjustment of described Magnet adjusting module
Magnetic target is away from being simulated by described analog module and showing target real-time status figure in described display screen.
Further, described work chamber is a space closed, and the sidewall of described work chamber is provided with air inlet and takes out
QI KOU, described bleeding point connects vacuum pump.
Further, described substrate can use quartz, pottery and glass.
Further, it is additionally provided with backboard between described target and described Magnet.
Further, described Magnet is permanent magnet.
The technical scheme of the embodiment of the present invention has the benefit that above-mentioned magnetic control sputtering device, owing to including target consumption
Supervising device, can the most accurately monitor target consumption, accurately adjust magnetic target away from, promote the quality of magnetron sputtering plating, it is ensured that
The uniformity of plated film and stability.
Accompanying drawing explanation
Fig. 1 is the structural representation of the magnetic control sputtering device of the present invention；
Fig. 2 is the sectional view at II-II place in Fig. 1；
Fig. 3 is the sectional view at III-III place in Fig. 1；And
Fig. 4 is the structural representation of the target consumption supervising device of the present invention.
Detailed description of the invention
By further illustrating the technological means and effect that the present invention taked by reaching predetermined goal of the invention, below in conjunction with accompanying drawing and
Preferred embodiment, detailed description of the invention, structure, feature and the effect thereof to the present invention, after describing in detail such as.
Alleged in the description of the present invention orientation " on " and D score only in order to represent relative position relation, and for this theory
Position relationship embodied in for the accompanying drawing of bright book.
Fig. 1 is the structural representation of the magnetic control sputtering device of the present invention, and Fig. 2 is the sectional view at II-II place in Fig. 1, and Fig. 3 is figure
In 1, the sectional view at III-III place, refers to shown in Fig. 1 to Fig. 3, magnetic control sputtering device 10 include work chamber 11, substrate 12,
Target 13, Magnet 14 and target consume supervising device 15.
Work chamber 11 i.e. cathode chamber, the miscellaneous part major part of magnetic control sputtering device 10 is arranged in work chamber 11, work
Making chamber 11 is a space closed, and the sidewall of work chamber 11 is provided with air inlet 112 and bleeding point 114, bleeds
Mouth 114 connects vacuum pump (not shown), and air inlet 112 is for argon and the entrance of reacting gas such as nitrogen or oxygen.?
In the present embodiment, substrate 12, target 13, Magnet 14 are from top to bottom set in turn in work chamber 11.Substrate 12 is square
Shape platy structure, substrate 12 can use the materials such as quartz, pottery and glass to make, but be not limited to this.Target 13 is arranged at
Between substrate 12 and Magnet 14, target 13 selects according to the needs of sputtering, and Magnet 14 be that multiple strip and level are flat
Between-line spacing is arranged at the lower section of target 13, and Magnet 14 is permanent magnet.Backboard (figure it is also provided with between target 13 and Magnet 14
Do not show).
Fig. 4 is the structural representation of the target consumption supervising device of the present invention, and shown in Figure 4, target consumes supervising device
15 include laser transmitting-receiving device 152, computing module 154 and Magnet adjusting module 155.Separately combine shown in Fig. 2, for coordinating
The installation of laser transmitting-receiving device 152, is provided with multiple through hole 122, the position of through hole 122 and Magnet in substrate 12 uniformly
The position of 14 is the most corresponding, and laser transmitting-receiving device 152 is arranged in through hole 122.Please continue to refer to Fig. 4, laser transmitting-receiving device
152 and computing module 154 be electrically connected with, laser transmitting-receiving device 152 record receives and sends the time difference of (transmitting-receiving) laser,
And calculating the target consumption h of position corresponding to each laser transmitting-receiving device 152 by computing module 154, Magnet adjusts mould
Block 155 and computing module 154 are electrically connected with, and Magnet adjusting module 155 is sequentially adjusted according to the result of calculation of computing module 154
The spacing of Magnet corresponding to each laser transmitting-receiving device 152 14 and target 13 (magnetic target away from) d, specifically, the target of certain position
Material consumption h is thickness of several millimetres, then the magnetic target of its correspondence increases several millimeters away from d, remains target 13 surface and Magnet
14 spacing are constant.After being depleted to a certain degree for target 13, target consumes supervising device 15 by automatic away from d of target magnetic
Adjust, thus continue to keep uniformity and the quality of plated film of plated film.
Target consume supervising device 15 may also include analog module 156 and display screen 158, analog module 156 respectively with display
Screen 158, computing module 154 and Magnet adjusting module 155 are electrically connected with, and display screen 158 is arranged at work chamber
On the outer wall of 11, target consumption h and Magnet adjusting module 155 that computing module 154 is calculated all positions adjust
Magnetic target simulate away from d and show target real-time status figure in display screen 158 by analog module 156.
The technical scheme of the embodiment of the present invention has the benefit that above-mentioned magnetic control sputtering device 10, owing to including that target disappears
Consumption supervising device 15, can the most accurately monitor target consumption h, accurately adjusts magnetic target away from d, the product of lifting magnetron sputtering plating
Matter, it is ensured that the uniformity of plated film and stability.
Based on foregoing description, it will be understood by those skilled in the art that in the embodiment of the present invention, all accompanying drawings are magnetic control sputtering devices
Simple schematic diagram, only for clearly describe structure relevant to point of the present invention in this programme, unrelated with point of the present invention for other
Structure be existing structure, the most embody or only realizational portion.
The above, the only detailed description of the invention of the present invention, but protection scope of the present invention is not limited thereto, and any familiar
Those skilled in the art, in the technical scope that the invention discloses, can readily occur in change or replace, should contain at this
Within the protection domain of invention.Therefore, protection scope of the present invention should be as the criterion with described scope of the claims.
Claims (7)
1. a magnetic control sputtering device (10), including work chamber (11), substrate (12), target (13) and Magnet (14),
Described substrate (12), described target (13) and described Magnet (14) are from top to bottom set in turn in described work chamber (11)
In, described Magnet (14) is multiple strip and the setting of horizontal parallel interval, it is characterised in that: described magnetic control sputtering device (10)
Also including that target consumes supervising device (15), described target consumes supervising device (15) and includes laser transmitting-receiving device (152), meter
Calculating module (154) and Magnet adjusting module (155), described laser transmitting-receiving device (152) is multiple and is arranged at uniformly
In described substrate (12), described laser transmitting-receiving device (152) is electrically connected with described computing module (154), described laser
R-T unit (152) record is received and dispatched the time difference of laser and calculates each described laser receipts by described computing module (154)
Target consumption (h) of position corresponding to transmitting apparatus (152), described Magnet adjusting module (155) and computing module (154)
Being electrically connected with, described Magnet adjusting module (155) is sequentially adjusted in each institute according to the result of calculation of described computing module (154)
State the magnetic target corresponding to laser transmitting-receiving device (152) away from (d).
2. magnetic control sputtering device (10) as claimed in claim 1, it is characterised in that: the upper uniform setting of described substrate (12)
Having multiple through hole (122), the position of described through hole (122) is the most corresponding with the position of described Magnet (14), and described laser is received
Transmitting apparatus (152) is arranged in described through hole (122).
3. magnetic control sputtering device (10) as claimed in claim 1, it is characterised in that: described target consumes supervising device (15)
Also include analog module (156) and display screen (158), described analog module (156) respectively with described display screen (158),
Described computing module (154) and described Magnet adjusting module (155) are electrically connected with, and described display screen (158) is arranged
On the outer wall of described work chamber (11), described computing module (154) is calculated described target consumption (h) and
The described magnetic target that described Magnet adjusting module (155) adjusts is simulated and in described aobvious by described analog module (156) away from (d)
Display screen curtain (158) display target real-time status figure.
4. magnetic control sputtering device (10) as claimed in claim 1, it is characterised in that: described work chamber (11) is an envelope
The space closed, the sidewall of described work chamber (11) is provided with air inlet (112) and bleeding point (114), described bleeding point
(114) connection has vacuum pump.
5. magnetic control sputtering device (10) as claimed in claim 1, it is characterised in that: described substrate (12) can use quartz,
Pottery and glass.
6. magnetic control sputtering device (10) as claimed in claim 1, it is characterised in that: described target (13) and described Magnet (14)
Between be additionally provided with backboard.
7. magnetic control sputtering device (10) as claimed in claim 1, it is characterised in that: described Magnet (14) is permanent magnet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610496839.8A CN105951052B (en) | 2016-06-29 | 2016-06-29 | Magnetic control sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610496839.8A CN105951052B (en) | 2016-06-29 | 2016-06-29 | Magnetic control sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105951052A true CN105951052A (en) | 2016-09-21 |
| CN105951052B CN105951052B (en) | 2018-10-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610496839.8A Active CN105951052B (en) | 2016-06-29 | 2016-06-29 | Magnetic control sputtering device |
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| Country | Link |
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| CN (1) | CN105951052B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106958011A (en) * | 2017-05-17 | 2017-07-18 | 赵其煜 | The control device and control method of dynamic control sputtering target material utilization rate |
| CN107058961A (en) * | 2017-04-27 | 2017-08-18 | 武汉华星光电技术有限公司 | A kind of physical sputtering film formation device and method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101641458A (en) * | 2007-03-30 | 2010-02-03 | 国立大学法人东北大学 | Rotating magnetron sputtering apparatus |
| CN203846096U (en) * | 2014-05-08 | 2014-09-24 | 上海天马有机发光显示技术有限公司 | Sputtering equipment and target thickness measuring system |
-
2016
- 2016-06-29 CN CN201610496839.8A patent/CN105951052B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101641458A (en) * | 2007-03-30 | 2010-02-03 | 国立大学法人东北大学 | Rotating magnetron sputtering apparatus |
| CN203846096U (en) * | 2014-05-08 | 2014-09-24 | 上海天马有机发光显示技术有限公司 | Sputtering equipment and target thickness measuring system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107058961A (en) * | 2017-04-27 | 2017-08-18 | 武汉华星光电技术有限公司 | A kind of physical sputtering film formation device and method |
| CN106958011A (en) * | 2017-05-17 | 2017-07-18 | 赵其煜 | The control device and control method of dynamic control sputtering target material utilization rate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105951052B (en) | 2018-10-12 |
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Effective date of registration: 20201211 Address after: No.146 Tianying Road, high tech Zone, Chengdu, Sichuan Province Patentee after: Chengdu CHENXIAN photoelectric Co.,Ltd. Address before: Building 4, No.1 Longteng Road, Kunshan Development Zone, Suzhou City, Jiangsu Province Patentee before: KunShan Go-Visionox Opto-Electronics Co.,Ltd. |