CN205934012U - Magnetron sputtering target, magnetron sputtering target and magnetron sputtering equipment - Google Patents
Magnetron sputtering target, magnetron sputtering target and magnetron sputtering equipment Download PDFInfo
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- CN205934012U CN205934012U CN201620961698.8U CN201620961698U CN205934012U CN 205934012 U CN205934012 U CN 205934012U CN 201620961698 U CN201620961698 U CN 201620961698U CN 205934012 U CN205934012 U CN 205934012U
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Abstract
The utility model discloses a magnetron sputtering target, magnetron sputtering target and magnetron sputtering equipment relates to the magnetron sputtering technology field, for solving the inhomogeneous problem that uneven thickness is even that leads to forming the rete on the base plate of each regional film forming speed that corresponds because of the magnetron sputtering target. The magnetron sputtering target is the regional sunken cambered surface in middle part including the face of sputter, the face of sputter. When installing the magnetron sputtering target on the magnetron sputtering target, when forming the rete on the base plate, compare in the middle part region of the face of sputter and the distance between the base plate, the fringe region and the distance between the base plate of sputtering the face are less, magnetic field reduces to lead to poor corresponding to the film forming speed of the regional film forming speed in the middle part of the face of sputter and fringe region corresponding to the face of sputter because of being inhomogeneous, improve the homogeneity of each regional film forming speed that corresponds of magnetron sputtering target, thereby improve the homogeneity of the thickness of the rete of formation on the base plate.
Description
Technical field
This utility model is related to magnetron sputtering technique field, more particularly, to a kind of magnetic control spattering target, magnetic controlled sputtering target and
Magnetron sputtering apparatus.
Background technology
Magnetron sputtering technique has evolved into one of very important technology in industrial plated film, because it has higher splashing
The advantages of firing rate rate, higher sedimentation rate, relatively low depositing temperature, preferable film quality, it is widely used in electronics, light
, function of surface thin film, thin film phosphor etc., for example, display device, solaode, building glass, microwave and radio frequency screen
Cover device and device, sensor etc..
When forming film layer using magnetron sputtering technique on substrate, magnetic control spattering target is arranged on magnetic controlled sputtering target, base
The sputtering that plate and magnetic controlled sputtering target are separately mounted to magnetron sputtering apparatus is indoor, and magnetic controlled sputtering target is located at the lower section of substrate, magnetic control
The sputter face of sputtering target material is relative with substrate, bombards the sputter face of magnetic control spattering target using lotus energy particle (such as argon ion),
Target particle (as ion, atom, molecule etc.) is made to escape from the sputter face of magnetic control spattering target, the target particle of effusion is in substrate
Upper deposition, forms film layer.
In prior art, when forming film layer using magnetron sputtering technique on substrate, due to the edge of magnetic control spattering target
The corresponding magnetic field in region may be less than the corresponding magnetic field of the central region of magnetic control spattering target, thus bombardment magnetic control spattering target
The lotus energy particle of the central region than bombardment magnetic control spattering target for the lotus energy particle of marginal area is few, leads to magnetic control spattering target
The corresponding film forming speed of marginal area is less than the corresponding film forming speed of the central region of magnetic control spattering target, thus is splashed using magnetic control
After technology of penetrating forms film layer on substrate, the thickness of film layer corresponding with the marginal area of magnetic control spattering target is less than and is splashed with magnetic control
Shoot at the target material the corresponding film layer of central region thickness, the film layer causing to be formed on substrate in uneven thickness.
Utility model content
The purpose of this utility model is to provide a kind of magnetic control spattering target, magnetic controlled sputtering target and magnetron sputtering apparatus, uses
Result in the film layer on substrate in solution because the corresponding film forming speed of the regional of magnetic control spattering target is uneven
Technical problem in uneven thickness.
To achieve these goals, this utility model provides following technical scheme：
First aspect of the present utility model provides a kind of magnetic control spattering target, and including sputter face, described sputter face is middle part
The cambered surface of area depression.
Second aspect of the present utility model provides a kind of magnetic controlled sputtering target, including backboard with as described in technique scheme
Magnetic control spattering target, described magnetic control spattering target is arranged on described backboard.
The third aspect of the present utility model provides a kind of magnetron sputtering apparatus, including the magnetic control as described in technique scheme
Sputtering target.
When the magnetic control spattering target providing this utility model is arranged on magnetic controlled sputtering target, and magnetic controlled sputtering target is installed
Indoor in the sputtering of magnetron sputtering apparatus, during forming film layer on substrate, due to the magnetic controlled sputtering target of this utility model offer
The sputter face of material is cambered surface, and the central region depression of sputter face, thus between the central region compared to sputter face and substrate
Distance, the distance between the marginal area of sputter face and substrate are less, therefore, so that being formed at substrate within the unit interval
The thickness relative increase of the film layer in upper region corresponding with the marginal area of sputter face, and make to be formed on substrate with sputter face
The corresponding region of central region in film layer thickness relatively reduced, i.e. film forming speed corresponding with the marginal area of sputter face
Relative increase, and film forming speed corresponding with the central region of sputter face is relatively reduced, adjustment is corresponding to the middle region of sputter face
The film forming speed in domain and the film forming speed of the marginal area corresponding to sputter face, with reduce lead to because of Magnetic field inhomogeneity corresponding to
The film forming speed of the central region of sputter face is splashed so that corresponding to the difference of the film forming speed of the marginal area corresponding to sputter face
Penetrate the film forming speed of central region in face and the film forming speed of the marginal area corresponding to sputter face matches, improve magnetron sputtering
The uniformity of the corresponding film forming speed of regional of target, thus improve the uniform of the thickness of film layer being formed on substrate
Property.
Brief description
Accompanying drawing described herein is used for providing further understanding to of the present utility model, constitutes one of the present utility model
Point, schematic description and description of the present utility model is used for explaining this utility model, does not constitute to of the present utility model
Improper restriction.In the accompanying drawings：
The structural representation of the magnetic control spattering target that Fig. 1 provides for this utility model embodiment；
The structural representation of the magnetic controlled sputtering target that Fig. 2 provides for this utility model embodiment.
Reference：
10- magnetic control spattering target, 11- sputter face,
20- magnetic controlled sputtering target, 30- power supply,
40- substrate.
Specific embodiment
In order to further illustrate magnetic control spattering target, magnetic controlled sputtering target and the magnetron sputtering of the offer of this utility model embodiment
Equipment, is described in detail with reference to Figure of description.
Refer to Fig. 1, the magnetic control spattering target 10 that this utility model embodiment provides includes sputter face 11, and sputter face 11 is
The cambered surface of central region depression.
Specifically, please continue to refer to Fig. 1, it is assumed that Fig. 1 in the magnetic control spattering target 10 that this utility model embodiment provides
The upper surface of middle magnetic control spattering target 10 is sputter face 11, and the central region concave downward of sputter face 11 forms a middle region
The cambered surface of domain concave downward.
When the magnetic control spattering target 10 providing this utility model embodiment is arranged on magnetic controlled sputtering target, and magnetic control is splashed
Shoot at the target and be arranged on the sputtering interior of magnetron sputtering apparatus, during forming film layer on substrate, for example, form film on the glass substrate
During layer, because the sputter face 11 of the magnetic control spattering target 10 of this utility model embodiment offer is in cambered surface, and sputter face 11
Portion's area depression, thus the distance between the central region compared to sputter face 11 and substrate, the marginal area of sputter face 11 with
The distance between substrate is less, and usual, with the distance between the substrate corresponding one-tenth in less region on magnetic control spattering target 10
Film speed is greater than larger with the distance between the substrate corresponding film forming speed in region on magnetic control spattering target 10, therefore,
So that the relative increasing of the thickness of the film layer being formed in region corresponding with the marginal area of sputter face 11 on substrate in unit interval
Plus, and the thickness of the film layer making to be formed in region corresponding with the central region of sputter face 11 on substrate is relatively reduced, that is, with
The marginal area corresponding film forming speed relative increase of sputter face 11, and film forming speed corresponding with the central region of sputter face 11
Relatively reduced, the film forming speed corresponding to the central region of sputter face 11 for the adjustment becomes with the marginal area corresponding to sputter face 11
Film speed, leads to the film forming speed of the central region corresponding to sputter face 11 and corresponding to sputtering with reduction because of Magnetic field inhomogeneity
The difference of the film forming speed of the marginal area in face 11 is so that the film forming speed of central region corresponding to sputter face 11 splashes with corresponding to
The film forming speed penetrating the marginal area in face 11 matches, and improves the corresponding film forming speed of regional of magnetic control spattering target 10
Uniformity, thus improve the uniformity of the thickness of film layer being formed on substrate.
Further, since the magnetic control spattering target 10 providing this utility model embodiment is arranged on magnetic controlled sputtering target, and
Magnetic controlled sputtering target is arranged on the sputtering interior of magnetron sputtering apparatus, during forming film layer on substrate, can improve and be formed at
The uniformity of the thickness of the film layer on substrate, thus when the substrate being formed with film layer is applied on the display apparatus, can prevent
Lead to because the film layer on substrate is uneven show the generation of the phenomenons such as Mura (speckle), especially display device carries out low GTG
Display Mura during display.
It is noted that the magnetic control spattering target 10 that this utility model embodiment provides is applied to the base in display device
When forming film layer on plate, can apply to the base in undersized display device (for example, being smaller in size than 32 cun of display device)
Form film layer it is also possible to be applied to the base in large-sized display device (display device that for example, size is more than 32 cun) on plate
Film layer is formed on plate.
Especially in large-sized display device, (for example, size is more than 32 cun of display device, or advanced lines line is flat
Plate) substrate on when forming film layer, conventionally, as the restriction of preparation technology and preparative capacibility, large-sized aobvious
When forming film layer on the substrate of showing device, multiple magnetic control spattering targets 10 are generally installed on magnetic controlled sputtering target, each magnetic control splashes
Shoot at the target material 10 sputter face 11 all relative with substrate, however, because, in multiple magnetic control spattering targets 10, two adjacent magnetic controls splash
Shoot at the target, between material 10, there is certain gap, thus, two adjacent magnetic control spattering targets 10 correspond to respectively, are used for providing magnetic field
Magnet between also there is certain gap, lead in each magnetic control spattering target 10 near and other adjacent magnetic controlled sputtering targets
The corresponding magnetic field of marginal area of the side of material 10 is less, and the corresponding magnetic field of central region of each magnetic control spattering target 10 is relatively
Greatly, thus near corresponding with the marginal area of the side of other adjacent magnetic control spattering targets 10 in each magnetic control spattering target 10
Lotus energy particle less, and the central region corresponding lotus energy particle of each magnetic control spattering target 10 is more, works as magnetic controlled sputtering target
When material 10 is planar targets, that is, during the distance between the regional of magnetic control spattering target 10 and substrate all same, can lead to
The corresponding film forming speed of marginal area of magnetic control spattering target 10 is less than one-tenth corresponding with the central region of magnetic control spattering target 10
Film speed.
And in the magnetic control spattering target 10 that this utility model embodiment provides, sputter face 11 is curved surface, and sputter face 11
Central region is recessed, thus the magnetic control spattering target 10 that multiple this utility model embodiments are provided is arranged on magnetic controlled sputtering target
On, and by magnetic controlled sputtering target be arranged on magnetron sputtering apparatus sputtering indoor, the middle part of the sputter face 11 of magnetic control spattering target 10
Region is larger with the distance of substrate, and the marginal area of sputter face 11 of magnetic control spattering target 10 is less with the distance of substrate, because
And when forming film layer on substrate, can effectively reduce the central region leading to corresponding to sputter face 11 because of Magnetic field inhomogeneity
Film forming speed with corresponding to sputter face 11 marginal area film forming speed difference so that corresponding to sputter face 11 middle region
The film forming speed in domain is matched with the film forming speed of the marginal area corresponding to sputter face 11.
In the above-described embodiments, the shape of magnetic control spattering target 10 can be multiple, and for example, magnetic control spattering target 10 is permissible
In rectangular-shaped, or, magnetic control spattering target 10 can be cylindrical, or, magnetic control spattering target 10 can be strip.
When the magnetic control spattering target 10 providing this utility model embodiment is applied in large-sized display device (example
As, size is more than 32 cun of display device) substrate on when forming film layer, magnetic control spattering target 10 can be in strip, when will be many
When individual magnetic control spattering target 10 is arranged on magnetic controlled sputtering target, along the length direction of magnetic control spattering target 10, magnetic control spattering target
10 two ends are not provided with other magnetic control spattering targets 10, along the width of magnetic control spattering target 10, magnetic control spattering target 10
One or both sides arrange other magnetic control spattering targets 10, now, the sputter face 11 of magnetic control spattering target 10 is in magnetron sputtering
Section on the width of target 10 is circular arc line, and the sputter face 11 of magnetic control spattering target 10 is in magnetic control spattering target 10
Section on length direction can be straight line, and that is, the sputter face 11 of magnetic control spattering target 10 is in the width side of magnetic control spattering target 10
It is cambered surface upwards, and the sputter face 11 of magnetic control spattering target 10 can be not configured on the length direction of magnetic control spattering target 10
Cambered surface is that is to say, that form groove-like structure, the width of groove-like structure and magnetic control spattering target on magnetic control spattering target 10
10 width is identical, and the length direction of groove-like structure is identical with the length direction of magnetic control spattering target 10, magnetic controlled sputtering target
The sputter face 11 of material 10 is cell wall and the bottom land of groove-like structure.
Refer to Fig. 2, this utility model embodiment also provides a kind of magnetic controlled sputtering target 20, including backboard and above-described embodiment
Described magnetic control spattering target 10, magnetic control spattering target 10 is arranged on backboard.
Described magnetic controlled sputtering target and above-mentioned magnetic control spattering target are had the advantage that identical with respect to prior art, and here is not
Repeat again.
When the magnetic controlled sputtering target 20 providing this utility model embodiment is applied to the substrate in large-sized display device
When forming film layer on 40, substrate 40 is located at the top of magnetic control spattering target 20, is arranged on the magnetic on the backboard of magnetic controlled sputtering target 20
The quantity of control sputtering target material 10 is multiple, for example, please continue to refer to Fig. 2, magnetic control spattering target 10 is strip target, multiple magnetic controls
Sputtering target material 10 left and right directions along along Fig. 2 is arranged in order, and the quantity of magnetic control spattering target 10 is even number, each two magnetron sputtering
Target 10 constitutes a pair of target pair, each pair target centering, and two magnetic control spattering targets 10 are disposed adjacent, for example, as shown in Fig. 2
10,12 magnetic control spattering target 10 left and right directions along along Fig. 2 of 12 magnetic control spattering targets are provided with backboard be arranged in order,
Direction from left to right, first magnetic control spattering target 10 and second magnetic control spattering target 10 one target pair of composition, first
Individual magnetic control spattering target 10 is connected with one end of power supply 30, and second magnetic control spattering target 10 is connected with the other end of power supply 30；
3rd magnetic control spattering target 10 and the 4th magnetic control spattering target 10 constitute a target pair, the 3rd magnetic control spattering target 10
It is connected with one end of power supply 30, the 4th magnetic control spattering target 10 is connected with the other end of power supply 30；5th magnetic controlled sputtering target
Material 10 and the 6th magnetic control spattering target 10 constitute a target pair, and one end of the 5th magnetic control spattering target 10 and power supply 30 is even
Connect, the 6th magnetic control spattering target 10 is connected with the other end of power supply 30；7th magnetic control spattering target 10 and the 8th magnetic control
Sputtering target material 10 constitutes a target pair, and the 7th magnetic control spattering target 10 is connected with one end of power supply 30, and the 8th magnetic control splashes
Material 10 of shooting at the target is connected with the other end of power supply 30；9th magnetic control spattering target 10 and the tenth magnetic control spattering target 10 constitute one
Individual target pair, the 9th magnetic control spattering target 10 is connected with one end of power supply 30, the tenth magnetic control spattering target 10 and power supply 30
The other end connect；11st magnetic control spattering target 10 and the 12nd magnetic control spattering target 10 constitute a target pair, the
11 magnetic control spattering targets 10 are connected with one end of power supply 30, the other end of the 12nd magnetic control spattering target 10 and power supply 30
Connect.
It is noted that when being provided with multipair target pair on the backboard of magnetic controlled sputtering target 20, multipair target is to can be total to
With a power supply 30, or, each pair target to one power supply 30 of corresponding distribution respectively, now, for example, as shown in Fig. 2 by
The direction of left-to-right, first magnetic control spattering target 10 is connected with one end of first power supply 30, second magnetic control spattering target
10 are connected with the other end of first power supply 30, and the 3rd magnetic control spattering target 10 is connected with one end of second power supply 30, the
Four magnetic control spattering targets 10 are connected with the other end of second power supply 30, the 5th magnetic control spattering target 10 and the 3rd power supply
30 one end connects, and the 6th magnetic control spattering target 10 is connected with the other end of the 3rd power supply 30, the 7th magnetic controlled sputtering target
Material 10 is connected with one end of fourth power 30, and the 8th magnetic control spattering target 10 is connected with the other end of fourth power 30,
9th magnetic control spattering target 10 is connected with one end of the 5th power supply 30, the tenth magnetic control spattering target 10 and the 5th power supply
30 other end connects, and the 11st magnetic control spattering target 10 is connected with one end of the 6th power supply 30, and the 12nd magnetic control splashes
Material 10 of shooting at the target is connected with the other end of the 6th power supply 30.Power supply 30 can be alternating current power supply.
The embodiment of the present invention also provides a kind of magnetron sputtering apparatus, including the magnetic controlled sputtering target as described in above-described embodiment.
Described magnetron sputtering apparatus and above-mentioned magnetic controlled sputtering target are had the advantage that identical with respect to prior art, will not be described here.
In the description of above-mentioned embodiment, specific features, structure, material or feature can be at any one or many
Combine in an appropriate manner in individual embodiment or example.
The above, specific embodiment only of the present utility model, but protection domain of the present utility model does not limit to
In this, any those familiar with the art, in the technical scope that this utility model discloses, can readily occur in change
Or replace, all should cover within protection domain of the present utility model.Therefore, protection domain of the present utility model should be with described power
The protection domain that profit requires is defined.
Claims (6)
1. a kind of magnetic control spattering target is it is characterised in that include sputter face, the cambered surface that described sputter face is recessed for central region.
2. magnetic control spattering target according to claim 1 is it is characterised in that described magnetic control spattering target is in strip.
3. magnetic control spattering target according to claim 2 is it is characterised in that described sputter face is in described magnetic control spattering target
Width on section be circular arc line.
4. a kind of magnetic controlled sputtering target is it is characterised in that include backboard and described magnetic controlled sputtering target as arbitrary in claims 1 to 3
Material, described magnetic control spattering target is arranged on described backboard.
5. magnetic controlled sputtering target according to claim 4 is it is characterised in that the quantity of described magnetic control spattering target is even number
Individual, magnetic control spattering target described in each two constitutes a pair of target pair；
Described target centering, one of described magnetic control spattering target is connected with one end of power supply, another described magnetron sputtering
Target is connected with the other end of described power supply.
6. a kind of magnetron sputtering apparatus are it is characterised in that include the magnetic controlled sputtering target as described in claim 4 or 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620961698.8U CN205934012U (en) | 2016-08-26 | 2016-08-26 | Magnetron sputtering target, magnetron sputtering target and magnetron sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620961698.8U CN205934012U (en) | 2016-08-26 | 2016-08-26 | Magnetron sputtering target, magnetron sputtering target and magnetron sputtering equipment |
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| CN205934012U true CN205934012U (en) | 2017-02-08 |
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| CN201620961698.8U Active CN205934012U (en) | 2016-08-26 | 2016-08-26 | Magnetron sputtering target, magnetron sputtering target and magnetron sputtering equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107881474A (en) * | 2017-11-23 | 2018-04-06 | 宁波江丰电子材料股份有限公司 | target and its processing method |
| CN108620816A (en) * | 2017-03-24 | 2018-10-09 | 宁波江丰电子材料股份有限公司 | The processing method of target blankss |
| CN112795891A (en) * | 2020-12-22 | 2021-05-14 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN116607118A (en) * | 2023-07-19 | 2023-08-18 | 上海陛通半导体能源科技股份有限公司 | Magnetron sputtering equipment and process flow |
-
2016
- 2016-08-26 CN CN201620961698.8U patent/CN205934012U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108620816A (en) * | 2017-03-24 | 2018-10-09 | 宁波江丰电子材料股份有限公司 | The processing method of target blankss |
| CN108620816B (en) * | 2017-03-24 | 2020-04-21 | 宁波江丰电子材料股份有限公司 | Method for processing target blank |
| CN107881474A (en) * | 2017-11-23 | 2018-04-06 | 宁波江丰电子材料股份有限公司 | target and its processing method |
| CN112795891A (en) * | 2020-12-22 | 2021-05-14 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN116607118A (en) * | 2023-07-19 | 2023-08-18 | 上海陛通半导体能源科技股份有限公司 | Magnetron sputtering equipment and process flow |
| CN116607118B (en) * | 2023-07-19 | 2023-10-10 | 上海陛通半导体能源科技股份有限公司 | Magnetron sputtering equipment and process flow |
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