CN101586228A - Method for improving utilization ratio of planar targets in magnetron sputtering coating system - Google Patents
Method for improving utilization ratio of planar targets in magnetron sputtering coating system Download PDFInfo
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- CN101586228A CN101586228A CNA2009101053217A CN200910105321A CN101586228A CN 101586228 A CN101586228 A CN 101586228A CN A2009101053217 A CNA2009101053217 A CN A2009101053217A CN 200910105321 A CN200910105321 A CN 200910105321A CN 101586228 A CN101586228 A CN 101586228A
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Abstract
The invention relates to a method for improving utilization ratio of planar targets in magnetron sputtering coating system, includes following steps: a, testing width of planar targets sputtering area used in magnetron sputtering coating system; b, setting width and size of new targets according to width of planar targets sputtering area, and width of the new targets is a little bigger than width of planar targets sputtering area; c, setting old targets in non-sputtering area of magnetron sputtering coating system. The method can save use amount of new targets immediately without effecting production process, products quality and needing no improvement in devices, thereby utilization ratio of planar target is improved.
Description
Technical field
The present invention relates to a kind of film coating method, refer to a kind of especially by the method that improves the planar targets utilization ratio in the magnetron sputtering coating system that new target size reaches reduction effect is set.
Background technology
Magnetron sputtering technique in the past few decades in development fast, nowadays it has become at the industrial important technology of deposit coatings widely that carries out.Magnetron sputtering technique comprises that in many Application Areass aspects such as making hard, wear-resistant, low friction, erosion-resisting, decoration and photoelectricity film have significant effects.
The principle of DC magnetron sputtering system: anomalous glow discharge will charge into the argon gas ionization of vacuum chamber, a large amount of electronics move along the magnetic line of force direction line of spinning under the constraint in magnetic field, constantly clash into argon molecules, make it continuous ionization and go out a large amount of argon positive ion and electronics, the argon positive ion quickens the target of bombardment as negative electrode under effect of electric field, sputter a large amount of target atom, be neutral target atom (or molecule) and be deposited on and form plated film on the substrate; The electronics that institute's ionization goes out is called secondary electron, and it will continue and the argon molecules collision, continue its ionization.Thereby keep the sputter of target.Target as the magnetron sputtering object is broadly divided into Style Columu Talget and planar target, the Style Columu Talget theory structure is simple, but its structural limitations its purposes, and technology is to say monopolization abroad, so domestic to use more in industrial production be the rectangle plane target, at present, the rectangular target that existing length reaches 4m is used to be coated with the thermal isolation film of window glass, allow substrate continuously pass through, can not only be coated with large-area window glass, also be suitable on the polyester belt of rolling, being coated with various metallic diaphragms by the rectangular target below, this rectangle plane target is because the shortcoming of self, utilization ratio can not surpass 40%, and the utilization ratio of industry is substantially about 30%, so the space that can improve in addition.Because the planar targets technology content requires high, can not the big area moulding, so existing planar targets mostly is fritter and is spliced.Because target mostly is noble metal or alloy material, therefore lower utilization ratio causes product cost high, has influenced rate of profit.At present, if want to put forward the utilization ratio of target, can only use new technologies such as running target, shifting magnetic field or cylindrical target, but domesticly also be in stage of trial, add that the fund that its scrap build needs is more, therefore do not have complete invested in plant running in these technical fields, most of enterprises are still using the common planar target, therefore, the utilization ratio that need make ins all sorts of ways improves target increases Enterprises'Competitiveness to reduce the industry cost.
Summary of the invention
Technical purpose of the present invention is in order to provide a kind of size according to magnetic control sputtering film plating device in the magnetron sputtering coating system to adjust best target material structure and size, to improve target utilization in the magnetron sputtering coating system.
The method that improves the planar targets utilization ratio in the magnetron sputtering coating system of the present invention comprises following step:
The width of sputter area in a, the used magnetic control sputtering film plating device of test magnetron sputtering coating system;
B, according to the width of sputter area in the magnetic control sputtering film plating device width dimensions of new target is set, the width dimensions of this new target is identical with the width dimensions of magnetic control sputtering film plating device sputter area;
C, the non-sputtering zone of answering with pole pair in magnetic control sputtering film plating device are provided with old target.
The width of sputter area is the pairing minimum width of position of magnetic pole set in the magnetic control sputtering film plating device in the magnetic control sputtering film plating device described in the above-mentioned a step.
The width dimensions that the width dimensions of this new target described in the above-mentioned b step is slightly larger than the magnetic control sputtering film plating device sputter area is identical.
Beneficial effect: adopt method of the present invention, the width of new target is set according to the width of magnetic control sputtering device sputter area, do not influencing production technique, quality product, and under the prerequisite of equipment improvement, the service efficiency of the new target of raising that can get instant result, thereby improve the utilization ratio of new target, realize cost-effective purpose, through calculating, I take charge of present target utilization is 29%, according to method of the present invention, utilization ratio can be improved near the described ultimate value of principle, reach 40%.With the production line of producing 4000000 standard films per year is example, and the target consumption in one year approximately is worth 900,000 dollars, promptly will save every year about 230,000 dollars, and therefore, the economic benefit of present method is very considerable.
For ease of explanation detailed content and the technology relevant, below describe with regard to conjunction with figs. now with the present invention.
Description of drawings
Fig. 1, be the synoptic diagram that the new target of ITO is installed in the prior art;
Fig. 2, the synoptic diagram of installing for the new target of ITO among the present invention;
Fig. 3, be the synoptic diagram of ITO target splicing among the present invention;
Fig. 4, be the new target scheme of installation of ITO in the prior art.
Embodiment
Please refer to Fig. 1, Fig. 2, Fig. 3 and shown in Figure 4, wherein, Fig. 1 and Fig. 4 are simple object simulating figure of the prior art and splicing synoptic diagram.Fig. 2 and Fig. 3 are simple object simulating figure of the present invention and splicing synoptic diagram.Prior art shown in Figure 4 all is new target, and after once using, recycles for the second time.
Please refer to Fig. 2 and shown in Figure 3, for the structure of the planar I TO target that adopts technical solution of the present invention as shown in the figure, include magnet plate 2, magnet 40 and 41, and be located at target plate 5 and target 62 and 62 on the magnet, wherein the used old target 61 of the usefulness of dash area covers, because its non-sputter area, do not consume, can be forever motionless.Can save a large amount of target consumption like this, though do not increase operation rate from principle, but saved consumption with regard to indirect raising utilization ratio, improve the concrete implementation step of the method for planar targets utilization ratio in the magnetron sputtering coating system of the present invention and come as follows:
The width of sputter area in a, the used magnetic control sputtering film plating device of test magnetron sputtering coating system; In this a step, generally, can directly the width of sputter area in the magnetic control sputtering film plating device can not determined according to the pairing width of position of magnetic pole is set in the magnetic control sputtering film plating device.
B, according to the width of sputter area in the magnetic control sputtering film plating device width dimensions of new target 62 is set, the width dimensions of this new target 62 is identical with the width dimensions of magnetic control sputtering film plating device sputter area; In this b step, the width dimensions of described this new target 62 except adopt width dimensions with the magnetic control sputtering film plating device sputter area identical be provided with, also can adopt the setting of the width dimensions that is slightly larger than the magnetic control sputtering film plating device sputter area, to improve the quality of sputter coating.
C, the non-sputtering zone of answering with pole pair in magnetic control sputtering film plating device are provided with old target 61.
Particularly, concrete operation steps of the present invention is as follows: target plate is positioned on the process furnace, is heated to 260 ℃ (needing 1h approximately), take off well-worn target 62 then, new target 62 is welded with target plate 5 according to shown in Figure 3.In the operation specific to present embodiment, sputtering zone is the width regions of two 30X200mm, but not sputtering zone is the width regions of two 12.5X930mm and a 25X930mm, the edge strip of this non-sputter area covers with old target, because it is not a sputter area, so can not be consumed in sputter coating, therefore putting just can be forever motionless.And when changing at every turn, as long as the target to two 30X200mm of sputter area is changed, but not the width of the width regions of two 12.5X930mm of sputter area and a 25X930mm then can save, all these edge strips just can repeated application and saved, in prior art, all adopted new target 62, the target of two 12.5X930mm of these non-sputter area and the width regions of a 25X930mm then is wasted.
The present invention is that test materials carries out with planar I TO target, the saving effect is apparent in view, the size of accompanying drawing also all is according to the size marking of its width, also suitable fully for other planar targets the present invention by the fritter splicing, this method is as long as change the size of target, determine the minimum value of sputter area according to the width of runway, thereby determine required target width, therefore do not have other particular requirement, do not need to drop into huge fund existing target system is improved, under the situation that does not influence production, just can obtain maximum benefit, it is very big that utilization ratio improves, and benefit is obvious, has only less than 30% with respect to the target utilization of industry, this method can be saved the buying target, thereby improved the utilization ratio of target, under the prerequisite that does not change other configuration, striven for the highest utilization ratio with the simplest method.The market value of target is relatively more expensive, and mostly is import, is the production line calculating of 4,000,000 standard films by annual production, if according to present method operation, will save the target expense so every year is about 230,000 dollars.
In the use of reality; usually can be when new target uses consumption saturating for the first time; old target is taken off from runway the thinnest middle place cut-out; and swap left and right recycling for the second time; to improve the utilization ratio of target; but this can't have influence on the utilization ratio of used target in the method that improves the planar targets utilization ratio in the magnetron sputtering coating system of the present invention, and method of the present invention can be used for the magnetron sputtering coating system of any use common plane target and effectively improves the utilization ratio of target.
Claims (3)
1, improve the method for planar targets utilization ratio in a kind of magnetron sputtering coating system, the method that improves the planar targets utilization ratio in this magnetron sputtering coating system comprises following step:
The width of used planar targets sputter area in a, the test magnetron sputtering coating system;
B, with the width of the sputter area of planar targets the width dimensions of new target is set according to magnetron sputtering, the width dimensions of this new target is more bigger than the width dimensions of the planar targets sputter area that magnetron sputtering is used;
C, with the non-sputtering zone of planar targets old target is set at magnetron sputtering.
2, improve the method for planar targets utilization ratio in a kind of magnetron sputtering coating system according to claim 1, it is characterized in that: the width of sputter area is the pairing minimum width of position of magnetic pole set in the magnetic control sputtering film plating device in the magnetic control sputtering film plating device described in a step.
3, improve the method for planar targets utilization ratio in a kind of magnetron sputtering coating system according to claim 1, it is characterized in that: the width dimensions that the width dimensions of this new target described in the b step is slightly larger than the magnetic control sputtering film plating device sputter area is identical.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009101053217A CN101586228A (en) | 2009-02-05 | 2009-02-05 | Method for improving utilization ratio of planar targets in magnetron sputtering coating system |
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| CNA2009101053217A CN101586228A (en) | 2009-02-05 | 2009-02-05 | Method for improving utilization ratio of planar targets in magnetron sputtering coating system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103668098A (en) * | 2014-01-02 | 2014-03-26 | 昆山全亚冠环保科技有限公司 | Method for improving use rate of targets for magnetic control spluttering film coating |
| CN106282953A (en) * | 2016-09-20 | 2017-01-04 | 江苏阳帆机电设备制造有限公司 | The manufacture method of a kind of wear-resisting line cutting steel wire and prepare wear-resisting line cutting steel wire vacuum covering filming equipment |
| CN110291222A (en) * | 2016-12-26 | 2019-09-27 | 三菱综合材料电子化成株式会社 | Silicon target |
-
2009
- 2009-02-05 CN CNA2009101053217A patent/CN101586228A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103668098A (en) * | 2014-01-02 | 2014-03-26 | 昆山全亚冠环保科技有限公司 | Method for improving use rate of targets for magnetic control spluttering film coating |
| CN103668098B (en) * | 2014-01-02 | 2016-10-05 | 昆山全亚冠环保科技有限公司 | A kind of method improving use in magnetron sputtering coating target utilization rate |
| CN106282953A (en) * | 2016-09-20 | 2017-01-04 | 江苏阳帆机电设备制造有限公司 | The manufacture method of a kind of wear-resisting line cutting steel wire and prepare wear-resisting line cutting steel wire vacuum covering filming equipment |
| CN106282953B (en) * | 2016-09-20 | 2018-12-11 | 江苏阳帆机电设备制造有限公司 | A kind of production method of wear-resisting wire cutting steel wire and prepare wear-resisting wire cutting steel wire vacuum covering filming equipment |
| CN110291222A (en) * | 2016-12-26 | 2019-09-27 | 三菱综合材料电子化成株式会社 | Silicon target |
| CN110291222B (en) * | 2016-12-26 | 2021-09-14 | 三菱综合材料电子化成株式会社 | Silicon target material |
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Application publication date: 20091125 |