CN110291222A - Silicon target - Google Patents
Silicon target Download PDFInfo
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- CN110291222A CN110291222A CN201780080220.1A CN201780080220A CN110291222A CN 110291222 A CN110291222 A CN 110291222A CN 201780080220 A CN201780080220 A CN 201780080220A CN 110291222 A CN110291222 A CN 110291222A
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- target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
Abstract
On the surface of the target (10) of rectangle tabular, as the virtual region not being sputtered in design, the ditch portion (13) of length direction extension is formed in the center of the width direction of target (10).By the width (W on target (10) surface1) when being set as 100%, the width (W of ditch portion (13)2) it is 20 ~ 40%.In addition, the corner (14) of ditch portion (13) is formed as flexure plane, the radius of curvature of the open edge in the corner (14) is preferably 1.0mm or more.
Description
Technical field
The present invention relates to for forming SiO by sputtering2The silicon target of the film of film etc..It should be noted that this world Shen
Please advocate with Japanese patent application the 250555th (Japanese Patent Application 2016-250555) filed on December 26th, 2016 be base
All the elements of Japanese Patent Application 2016-250555 are incorporated in this international application by the priority of plinth.
Background technique
In the past, plasmarized cation was collided with target, the atom hit back or molecule is made to be attached to splashing for substrate
It is known to penetrate method.In the sputtering method, with CVD (Chemical Vapor Deposition, chemical vapor deposition) method, true
Empty vapour deposition method, ion plating etc. are compared, and the excellent of film can be integrally formed uniformly in a short time for the substrate of large area by having
Point.Specifically, in above-mentioned sputtering method, the substrate for always configuring chip etc. opposite with target utilizes charged particle (band electrochondria
Son) impact target surface hits target ingredient, and so that it is attached to substrate surface and is formed film.
But there is the erosion portion of irradiation charge-particle beam and the non-erosion portion of non-irradiation beam in target material surface, although corroding
Portion is gradually corroded by the irradiation of above-mentioned beam, but is that non-erosion portion is not etched and remains.Therefore, in addition to substrate surface with
Outside, it is also attached to around substrate or non-erosion portion by the target ingredient that sputtering method discharges, is accumulated with the progress of sputtering.It is tied
Fruit has following problems: due to target surface non-erosion portion accumulation film and be abnormal electric discharge, the film separation of accumulation and
Generating particle leads to local defect if it is again attached to substrate surface.
In order to eliminate the problem, the silicon that non-erosion portion folded by the erosion portion by target material surface is formed as to trench is disclosed
Target (referring for example to patent document 1).In the silicon target, the depth of the ditch in non-erosion portion is 1mm or more, and is thickness
5% ~ 50%.In addition, two vertex angle parts of the ditch in non-erosion portion are formed as flexure plane, and the curvature of the flexure plane of its bottom corner
For 0.5mm or more.
In silicon target as constructed as above, the erosion portion than adjoining deeper is formed folded by the erosion portion by target material surface
Non- erosion portion, and non-erosion portion is integrally formed into trench, since the bottom of the ditch in non-erosion portion is in than erosion portion surface
The position of retraction, so the target component particle hit from erosion portion becomes difficult to be attached to non-erosion portion surface, it becomes difficult to
Non- erosion portion surface forms film.As a result, due to the generation of paradoxical discharge and particle when being greatly reduced sputtering, so can
The film of high-quality is formed in substrate surface.In addition, since the depth of the ditch in non-erosion portion is formed as 1mm or more and is target
The curvature of the bottom corner of the ditch is formed as 0.5mm or more by the 5% ~ 50% of thickness, thus can effectively inhibit paradoxical discharge and
The generation of particle.
Existing technical literature
Patent document
Patent document 1: No. 4821999 bulletins of Japanese Patent No. (claim 1, [0008], [0009] section, Fig. 1, Fig. 2).
Summary of the invention
Problems to be solved by the invention
But in the silicon target shown in above-mentioned previous patent document 1, since the furrow width in non-erosion portion is relative to 100mm's
Target width is 15mm (15%), ditch width, i.e., since the width of the ditch for the virtual region not being sputtered in design can become than reality
The width in the non-erosion portion not being sputtered on border is narrow, therefore elongated to the time required for the stable discharge at sputtering initial stage, there is life
Produce the bad situation that stability reduces.In addition, there are also following problems in the silicon target shown in above-mentioned previous patent document 1:
Although the radius of curvature of the bottom corner in non-erosion portion is 0.5mm or more, the curvature half of the open edge in corner is not provided
Diameter is abnormal electric discharge by starting point of the part, and deposit is in target if the radius of curvature of the open edge in the corner is sharp keen
The accumulation of material surface.
The object of the present invention is to provide the times required for the stable discharge that can foreshorten to sputtering initial stage, thus can mention
The silicon target of the production stability of substrate of the height with film.Other purpose of the invention is, provides when can inhibit sputtering
Paradoxical discharge, the silicon target of the inhibition of the accumulation of deposit to target material surface thus can be improved.
Means for solving the problems
1st viewpoint of the invention be on the surface of the target of rectangle tabular, as the virtual region not being sputtered in design,
The center of the width direction of target is formed with the silicon target of the ditch portion extended in length direction, which is characterized in that by target table
The width W in face1When being set as 100%, the width W of ditch portion2It is 20 ~ 40%.
2nd viewpoint of the invention is the invention based on the 1st viewpoint, which is characterized in that further by the corner of ditch portion
Be formed as flexure plane, the radius of curvature R of the open edge in corner1For 1.0mm or more.
3rd viewpoint of the invention is the invention based on the 1st viewpoint, which is characterized in that target is further will be at it
Multiple target plain pieces of length direction segmentation are configured to 1 column and constitute, which is throughout the above-mentioned multiple target plain pieces for being configured to 1 column
And it is formed.
Invention effect
In the silicon target of the 1st viewpoint of the invention, due to by the width W of target material surface1When being set as 100%, the width of ditch portion
W2It is 20 ~ 40%, so pass through the configuration for helping to occur the magnet of sputtering equipment of the magnetic line of force, the void not being sputtered in design
The width of quasi- region and ditch portion becomes easy unanimously, and deposit is difficult to accumulate in target material surface.As a result, can inhibit by above-mentioned
Paradoxical discharge caused by deposit can be improved to utilize and splash so the time required for the stable discharge at sputtering initial stage can be foreshortened to
The production stability for the substrate with film penetrated.
In the silicon target of the 2nd viewpoint of the invention, since the corner of ditch portion is formed as flexure plane, and the opening in corner
The radius of curvature R at edge1For 1.0mm or more, so the open edge in above-mentioned corner is not sharp keen, it becomes difficult to become paradoxical discharge
Starting point, can inhibit paradoxical discharge.As a result, can be used above-mentioned target by sputter on substrate uniformly and stably formed it is thin
Film, so deposit is difficult to accumulate on silicon target surface, therefore while the production capacity of the substrate with film can be improved
The service life of silicon target can be extended.
In the silicon target of the 3rd viewpoint of the invention, silicon target is constituted since multiple target plain pieces are configured to 1 column, is spread
The above-mentioned multiple target plain pieces for being configured to 1 column form ditch portion, so being suitable for making the liquid crystal display of large-scale display of sputtering method
The case where film of curtain or the solar battery etc. of large size.
Brief description
[Fig. 1] is the line A-A sectional view for showing Fig. 3 of silicon target of first embodiment of the present invention.
[Fig. 2] is the portion the B amplification sectional view of Fig. 1.
[Fig. 3] is the plan view of the silicon target.
[Fig. 4] is the line C-C sectional view of Fig. 3.
[Fig. 5] is the portion the D amplification sectional view of Fig. 4.
[Fig. 6] is the portion the E amplification sectional view of Fig. 4.
[Fig. 7] is the schematic diagram for showing the state sputtered using the silicon target.
[Fig. 8] is the figure for showing the preparation section of silicon target of second embodiment of the present invention.
[Fig. 9] is the F-F line sectional view of Fig. 8 (c).
[Figure 10] is sectional view corresponding with display Fig. 1 of silicon target of the embodiment of the present invention 1.
[Figure 11] is the portion the G amplification sectional view of Figure 10.
[Figure 12] is the portion the H amplification sectional view of Figure 10.
Specific embodiment
Hereinafter, illustrating mode for carrying out the present invention based on attached drawing.
<the 1st embodiment>
As shown in Fig. 1 ~ Fig. 4, silicon target 10 has its surface erosion portion 11 for being actually sputtered and by the erosion in sputtering
The non-erosion portion 12 not being sputtered actually folded by portion 11 and in sputtering.In this embodiment, above-mentioned target 10 is to pass through
Silicon is cut, the rectangle tabular of 1 lateral long (horizontally long) is formed as.As silicon, polysilicon or monocrystalline silicon etc. can be enumerated, but simultaneously
It is not limited to these.In addition, non-erosion portion 12 is not etched in the center of the width direction of target 10 and remains as in length side
The square shape slightly longer to the transverse direction of extension, erosion portion 11 is etched and is recessed to prolong in the length direction of target 10 around it
The laterally long cyclic annular (ド ー Na Star shape stretched).In addition, forming ditch portion 13 on the surface of target 10, invaded so that design is upper with non-
Erosion portion 12 is consistent.That is, on the surface of target, as the virtual region not being sputtered in design, in the width direction of target 10
Center is formed in the ditch portion 13 of length direction extension.It should be noted that the symbol 15 in Fig. 1, Fig. 3 and Fig. 4 is by target 10
In surface along the outer rim in erosion portion 11 be formed as slightly longer square frame-like and with far from erosion portion 11 outer rim and gradually under
The corner portion that 4 inclined surface of drop constitute, are not sputtered in sputtering.That is, in these corner portions 15, in the width of target 10
In the corner portion 15 that length direction extends to form, the horizontal angle preferably with the cross section of target 10 is for the two sides in direction
In the range of 10 ~ 70 degree, tilt length is 5mm or more (Fig. 1 and Fig. 3).In addition, in these corner portions 15, in target 10
Length direction the corner portion 15 that is extended to form in width direction of two sides, preferably with the two sides of the width direction in target 10 in
The corner portion 15 that length direction extends to form is identically formed (Fig. 3 and Fig. 4).However, it is possible to because of sputtering equipment or sputtering condition
Deng and be not formed in the corner portion 15 that the two sides of the length direction of target 10 extend to form in width direction.In addition, due to sputtering
Erosion portion 11, non-erosion portion 12 and corner portion 15 are necessarily divided into reason in the structure of device, the surface of target 10.But
Due to the electric power or gas of the region when the sputtering in erosion portion the conditions such as pressure due to it is different, what is be not sputtered actually is non-
It erosion portion 12 may not be always consistent with the ditch portion 13 for the virtual region not being sputtered in design.In addition, as sputtering, it is preferable to use
Magnetron sputtering, the magnetron sputtering use magnet, make intensive heating region by the way that electronics to be enclosed in magnetic field,
The probability of Ar cation and target collision can be improved.
On the other hand, as shown in Figure 1, by the width W on 10 surface of target1When being set as 100%, the width W of ditch portion 132It is 20
It ~ 40%, is preferably 25 ~ 35%.In addition, the corner 14 of ditch portion 13 is preferably formed into flexure plane (Fig. 1 and Fig. 2).By the corner 14
The radius of curvature of open edge be set as R1When, R1It preferably 1.0mm or more, is more preferably 1.5 ~ 3mm (Fig. 2).At this
In, by the width W of ditch portion 132It is limited to the width W on 10 surface of target120 ~ 40% in the range of the reason of be, if being lower than
20%, then the width of the ditch portion 13 for the virtual region not being sputtered in design becomes the non-erosion portion 12 than not being sputtered actually
Width it is narrow, thus can occur as between ditch portion and erosion portion caused by the deposit accumulated of remaining non-erosion portion it is abnormal
Electric discharge, can not foreshorten to the time required for the stable discharge at sputtering initial stage, if more than 40%, the erosion that is actually sputtered
13 part of ditch portion for the virtual region not being sputtered in portion 11 and design repeats, and ditch portion 13 can be also sputtered, the service life of target 10
It shortens.In addition, by the radius of curvature R as the open edge in the corner 14 of ditch portion 131Preferred scope be limited to 1.0mm or more
The reason of be, if being lower than 1.0mm, the open edge in corner 14 becomes sharp keen, becomes easy and be abnormal with this as the starting point
Electric discharge.It should be noted that above-mentioned radius of curvature R1By the radius of curvature R of the cross section of target 101The vertical of (Fig. 2) and target 10 cuts
The radius of curvature R in face1(Fig. 5 and Fig. 6) is constituted, these radius of curvature R1It is preferred that being identically formed.In addition, by the length of ditch portion 13
The both ends in direction are formed as slightly channel-like (slightly ditch shape steel shape) (Fig. 3) under head-up.However, it is possible to by the length side of ditch portion 13
To both ends be formed as arc-shaped under head-up.
The radius of curvature of the inside in the corner 14 of ditch portion 13 is being set as R2When, R2Preferably 3mm or more, further preferably
For 3 ~ 9mm (Fig. 2).In addition, in the cross section of target 10, by the radius of curvature R of the inside in above-mentioned corner 142Curved surface with
The radius of curvature for the curved surface that (plane) connects smoothly above the bottom wall of ditch portion 13 is set as R3When, R3Preferably 10mm or more
(Fig. 2), but the radius of curvature R of the open edge by corner 141With the radius of curvature R of the inside in corner 142Combination,
Can there is no radius of curvature R3Curved surface.That is, can be by radius of curvature R2Curved surface and ditch portion 13 bottom wall above (plane) it is directly smooth
Ground connection.Herein, above-mentioned radius of curvature R will be used as2Preferred scope be limited to the reason of 3mm or more and be, if being lower than
3mm, then the inclination in corner 14 becomes precipitous, therefore stress is concentrated, and rupture can be become easy.In addition, will be as above-mentioned curvature half
Diameter R3Preferred scope be limited to the reason of 10mm or more and be, if being lower than 10mm, because with above-mentioned radius of curvature R2Relationship and
Difference of height is generated, deposit becomes easy the reason of accumulating in the part, becoming rupture.It should be noted that above-mentioned radius of curvature
R2By the radius of curvature R of the cross section of target 102The radius of curvature R of the longitudinal section of (Fig. 2) and target 102(Fig. 5 and Fig. 6) is constituted,
These radius of curvature R2It is preferred that being identically formed.In addition, above-mentioned radius of curvature R3By the radius of curvature R of the cross section of target 103
The radius of curvature R of the longitudinal section of (Fig. 2) and target 103(Fig. 5 and Fig. 6) is constituted, these radius of curvature R3It is preferred that being identically formed.
Silicon target 10 as constructed as above is mounted on sputtering equipment (film formation device) by explanation based on Fig. 7 sputters
Method.Firstly, by the back side of target 10 by being laminated in copper with the binding material (not shown) of the formation such as indium or indium alloy
Backing plate 16 on make lamilate.By the way that lamilate is heated to 200 DEG C or so in this state, target 10 is passed through into bonding
Material is adhered on backing plate 16.Then, the surface for the target 10 being adhered on the backing plate 16 is made to reserve defined interval and substrate
17 surface it is opposite to.Then, after being fully vented in by film formation device, defined Ar gas is imported, if applying to target
Electric power is sputtered, then Ar gas is separated into Ar cation and electronics by high-temperature plasma.Above-mentioned Ar cationic (positively charged) with
Electronegative target 10 tempestuously collides.At this point, the element (Si) for constituting the target 10 for the part that Ar cation collided is hit
It returns and disperses, be attached to 17 surface of substrate.It should be noted that when being sputtered, such as O can be imported simultaneously with Ar gas2Gas
Body makes the O2Gas is reacted with the Si for constituting target 10, is achieved in reactive sputtering, and forms SiO on 17 surface of substrate2Film
(not shown).
In silicon target 10 as constructed as above, due to by the width W on 10 surface of target1When (Fig. 1) is set as 100%, ditch portion
13 width W2(Fig. 1 and Fig. 2) is 20 ~ 40%, so the configuration of the magnet by the sputtering equipment for helping to occur the magnetic line of force,
The width of the virtual region and ditch portion 13 that are not sputtered in design becomes easy unanimously, and deposit is difficult to be deposited on target 10.
As a result, due to can inhibit the paradoxical discharge as caused by above-mentioned deposit, so the stable discharge institute at sputtering initial stage can be foreshortened to
The production stability of the substrate with film using sputtering can be improved in the time needed.In addition, due to the corner 14 of ditch portion 13
Open edge radius of curvature R1Become difficult so the open edge in above-mentioned corner 14 is not sharp keen for 1.0mm or more (Fig. 2)
To become the starting point of paradoxical discharge, paradoxical discharge can inhibit.As a result, due to can be used above-mentioned target 10 by sputtering at substrate
On uniformly and stably form film, so can be improved with film substrate production capacity while, deposit is difficult to
It is deposited in 10 surface of target, therefore the service life of target 10 can be extended.
<the 2nd embodiment>
Fig. 8 and Fig. 9 shows the 2nd embodiment of the invention.In this embodiment, silicon target 50 is will to divide in its length direction
The multiple target plain pieces 51 ~ 54 cut are configured to 1 column and constitute, and form ditch throughout the above-mentioned multiple target plain pieces 51 ~ 54 for being configured to 1 column
Portion 55.Specifically, target 50 is by reserving the target plain piece 51 ~ 54 for the rectangle tabular that 4 are laterally grown in length direction
Gap is arranged in a column to be formed.That is, being arranged in a column by the way that 4 target plain pieces 51 ~ 54 are reserved gap is considered as 1 target
50.In addition, the erosion portion 56 being actually sputtered in sputtering is etched and is recessed in the surface of the above-mentioned target 50 for being considered as 1
The ring-type laterally grown at 1.In addition, the non-erosion portion 57 not being sputtered actually in sputtering is not etched and remains as transverse direction
Slightly longer square shape, so that being located at the inside in erosion portion 56 in the surface of the above-mentioned target 50 for being considered as 1.In addition, above-mentioned
Ditch portion 55 is formed by 4 chase part 55a ~ 55d of the planar recess than the erosion portion 56 before sputtering.It should be noted that
Symbol 58 in Fig. 8 and Fig. 9 be by 50 surface of target for being considered as 1 erosion portion 56 width direction two sides in length
Direction extend and is formed and with the outer rim far from erosion portion 56 and 2 inclined surface being gradually reduced constitute, when sputtering not
The corner portion being sputtered.It is preferably 10 ~ 70 degree with the horizontal angle of the cross section of target 50 in these corner portions 58
In range, tilt length is 5mm or more.In addition, in the length direction in erosion portion 56 in 50 surface of target for being considered as 1
Two sides do not form above-mentioned corner portion (Fig. 8 and Fig. 9) in the face that width direction extends to form.But these faces can also be formed with
The same corner portion of above-mentioned corner portion 58.In addition, reserving gap 59 when 4 target plain pieces 51 ~ 54 are arranged in a column is to consider
To the thermal expansion of each target plain piece 51 ~ 54.
On the other hand, in the width W on 50 surface of target that will be regarded as 11When being set as 100%, it is considered as 1 target 50
The width W of ditch portion 552It is 20 ~ 40%, preferably 25 ~ 35%.In addition, the corner of ditch portion 55 is preferably formed into flexure plane.Should
The radius of curvature of the open edge in corner is set as R1When, R1Preferably 1.0mm or more, further preferably 1.5 ~ 3mm.In addition,
The radius of curvature of the inside in corner is set as R2When, R2Preferably 3mm or more, further preferably 3 ~ 9mm.In addition, by target
Radius of curvature above the bottom wall of the ditch portion 55 of 50 cross section is set as R3When, R3Preferably 10mm or more, but pass through corner
The radius of curvature R of open edge1With the radius of curvature R of the inside in corner2Combination, can also there is no radius of curvature R3Curved surface.
That is, can be by radius of curvature R2Curved surface directly connected smoothly with (plane) above the bottom wall of ditch portion 55.Due to these numerical value models
The restriction reason enclosed is identical as the restriction reason of numberical range of the 1st embodiment, so the repetitive description thereof will be omitted.In addition, will
The shape of the both ends of the surface of the length direction of ditch portion 55 exists in the end of 4 chase parts 55a ~ 55d concave ditch part 55a, 55d
Be formed as arc-shaped (Fig. 8) under head-up.However, it is possible to which the end of chase part 55a, 55d are formed as slightly channel under head-up
Shape (slightly ditch shape steel shape).In addition to the foregoing, it constitutes identically as the 1st embodiment.
In order to prepare target 50 as constructed as above, cut out just from the polysilicon of quadrangular shape or columned monocrystalline silicon first
The silicon of rectangular plate.Then, the target plain piece of multi-disc strip is cut out from the silicon of the square plate.In this embodiment, from
The silicon 61 of square plate cuts out the target plain piece 51 ~ 54 (Fig. 8 (a)) of 4 strips.Then, in the table of these target plain pieces 51 ~ 54
Face forms ditch portion 55 and corner portion 58 (Fig. 8 (b)).In addition, these 4 target plain pieces 51 ~ 54, which are reserved gap 59, is arranged in a column
And (Fig. 8 (c) and Fig. 9) is adhered on backing plate 62 by binding material.In addition to the foregoing, ground structure identical as the 1st embodiment
At.
In silicon target 50 as constructed as above, 1 target 50, institute are constituted since 4 target plain pieces 51 ~ 54 are arranged in a column
To be suitable for the case where making the film of solar battery of the LCD screen of large-scale display or large size etc. of sputtering method.By
It is essentially identical in effect other than the above and effect and effect of the effect with the 1st embodiment, so the repetitive description thereof will be omitted.
Embodiment
Hereinafter, explaining examples and comparative examples of the present invention in detail.
<embodiment 1>
As shown in Figure 10 ~ Figure 12, first by cutting polysilicon, make that plate is long, plate is wide and plate thickness is respectively 800mm, 100mm
With the silicon target 110 of the rectangle tabular of 5mm.Then, (the design of ditch portion 113 is formd by being machined on the target 110
On, so that ditch portion 113 is formed as consistent with non-erosion portion 112.) and corner portion 115.Specifically, in the target of rectangle tabular
110 surface is formed in length side in the center of the width direction of target 110 as the virtual region not being sputtered in design
To the ditch portion 113 of extension, corner portion 115 is formed as into slightly four box shapes along the outer rim of target 110, and be formed as with remote
The surface of off-target material 110 and the inclined plane type (tilt angle: 45 degree) being gradually reduced.At this point, due to by the width of ditch portion 113
(furrow width) W2It is set as 27mm, so width (furrow width) W of ditch portion 1132Width (plate is wide: 100mm) W relative to target 1101For
27%.That is, furrow width W2With the wide W of plate1Ratio (furrow width ratio) be 27%.In addition, the corner 114 of ditch portion 113 is formed as flexure plane
(Figure 10 ~ Figure 12).At this point, by the radius of curvature R of the open edge in corner 1141Be formed as 1.5mm, by the inside in corner 114
Radius of curvature R2Be formed as 4.0mm, by the radius of curvature R of the cross section of target 1102Curved surface and ditch portion 113 bottom wall above
The radius of curvature R for the curved surface that (plane) connects smoothly3Be formed as 12.0mm (Figure 11 and Figure 12).The target 110 is made
For embodiment 1.It should be noted that since the depth (ditch depth) of ditch portion 113 is formed as 2.5mm, thus the depth of ditch portion 113 with
The ratio (ditch depth ratio) of the thickness (plate thickness) of target 110 is 50%.
<embodiment 2 ~ 22 and comparative example 1 ~ 5>
The target of embodiment 2 ~ 22 and comparative example 1 ~ 5 is formed, so that the size of each part is numerical value shown in Tables 1 and 2.It needs to illustrate
, the size of each part other than numerical value shown in table 1 is made to have made target similarly to Example 1.In addition, embodiment 22
Target is that the target that the length of embodiment 14 is 800mm is divided into two parts, so that respective length is the target that 400mm is obtained
Material.
<comparative test 1 and evaluation>
For the target of embodiment 1 ~ 22 and comparative example 1 ~ 5, when determined required for the stable discharge to sputtering initial stage respectively
Between T and can be used to the group number N of specific thickness.
(1) to the measuring method of time T required for the stable discharge at sputtering initial stage
Firstly, starting to form a film in substrate surface under the following conditions by sputtering using target.
(a) power input power is set as DC1000W.
(b) stagnation pressure is set as 0.4Pa.
(c) it is used as sputter gas, has used the Ar gas that flow is 28.5sccm and the O that flow is 1.5sccm2Gas.
(d) target is set as 70mm at a distance from substrate.
Then, the variation of voltage, electric current and pressure when being sputtered respectively with potentiometer, galvanometer and pressure gauge confirmation, will
The time point that voltage, electric current and pressure all no longer change is judged as the stable discharge at sputtering initial stage.Then, it determines from the beginning of
To the time of above-mentioned stable discharge from when electric discharge.Aforesaid operations are carried out 3 times, its average value is calculated.Using the average value as extremely
Time T required for the stable discharge at sputtering initial stage.
(2) it can be used to the measuring method of the group number N of specific thickness
Firstly, being formed a film under conditions of above-mentioned (1) (a) ~ (d) in substrate surface using target (1 group) by sputtering at, form a film
It is ruptured to target.Then, the plate thickness when rupture of measurement target, the plate thickness after calculating use is relative to the plate thickness used before starting
Percentage.It is that 50% target below counts to the calculated value, as can be used to the group number N of specific thickness.It will be above-mentioned
Operation has respectively carried out 10 groups to the target of embodiment 1 ~ 22 and comparative example 1 ~ 5.By these results are shown in table 1 and table 2 in.
[table 1]
[table 2]
By Tables 1 and 2 it is found that ditch portion furrow width ratio be 15% and 18% the small comparative example 1 and 2 of ratio in, at the beginning of sputtering
Time T required for the stable discharge of phase is 79 minutes and 93 minutes, and the time is long, and it is 5 that the group number N to specific thickness, which can be used,
Group, group number are few.In addition, ditch portion furrow width ratio be 42 ~ 50% the big comparative example 3 ~ 5 of ratio in, to the electric discharge at the initial stage of sputtering
Time T required for stablizing is 81 ~ 96 minutes, and the time is long, and it is 4 ~ 5 groups that the group number N to specific thickness, which can be used, and group number is few.Phase
For these, the ratio in embodiment 1 ~ 22 in optimum range for being 20 ~ 40% in the furrow width ratio of ditch portion, to the initial stage of sputtering
Stable discharge required for time T be 20 ~ 38 minutes, the time shortens, can be used to specific thickness group number N be 7 ~ 10 groups,
Group number becomes more.
Although in addition, ditch portion furrow width ratio be 40% and 23% ratio in optimum range, the corner of ditch portion
Radius of curvature (the R of open edge1) it is in the small embodiment 20 and 21 of radius of curvature of 0.4mm and 0.8mm, although to sputtering just
Time T required for the stable discharge of phase is 38 minutes and 36 minutes, and the time is short, but can be used to the group number N of specific thickness
It is 7 groups, is also the few target of group number in the target more than group number.It is 20 ~ 40% in the furrow width ratio of ditch portion relative to these
Ratio within the appropriate range, and the radius of curvature (R at the corner openings edge of ditch portion1) be 1.0 ~ 3.3mm radius of curvature
In the embodiment 1 ~ 19 and 22 in suitable range (1.0mm or more), until time T required for the stable discharge at sputtering initial stage
It is 20 ~ 33 minutes, shortens than embodiment 20 and 21, it is 8 ~ 10 groups that the group number N to specific thickness, which can be used, than embodiment 20 and 21
Become more.
In addition, in the embodiment 14 using 1 target that length is 800mm and using 2 for being divided into that length is 400mm
Target embodiment 22 in, until sputtering initial stage stable discharge required for time T be respectively 31 minutes and 33 minutes, time
Almost the same, it is 9 groups that the group number N to specific thickness, which can be used, and group number is identical.Its result is it is found that the length direction of target
Divide on time T required for the stable discharge to sputtering initial stage or can be used the group number N to specific thickness almost without influence.
Industrial availability
Silicon target of the invention can be used in the target of sputtering.
Symbol description
10,50,110 silicon targets
13,55,113 ditch portions
14,114 corners
51 ~ 54 target plain pieces.
Claims (3)
1. silicon target is on the surface of the target of rectangle tabular, as the virtual region not being sputtered in design, above-mentioned
The center of the width direction of target is formed with the silicon target of the ditch portion extended in length direction, which is characterized in that
By the width W of above-mentioned target1When being set as 100%, the width W of above-mentioned ditch portion2It is 20 ~ 40%.
2. silicon target described in claim 1, wherein the corner of above-mentioned ditch portion is formed as flexure plane, the opening in above-mentioned corner
The radius of curvature R at edge1For 1.0mm or more.
3. silicon target described in claim 1, wherein above-mentioned target is to configure the multiple target plain pieces divided in its length direction
It is constituted at 1 column, above-mentioned ditch portion is formed throughout the above-mentioned multiple target plain pieces for being configured to 1 column.
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| JP2016250555A JP6764335B2 (en) | 2016-12-26 | 2016-12-26 | Silicon target material |
| JP2016-250555 | 2016-12-26 | ||
| PCT/JP2017/035924 WO2018123183A1 (en) | 2016-12-26 | 2017-10-03 | Silicon target material |
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| CN110291222B CN110291222B (en) | 2021-09-14 |
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| JP (1) | JP6764335B2 (en) |
| KR (1) | KR102349236B1 (en) |
| CN (1) | CN110291222B (en) |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003277925A (en) * | 2002-03-19 | 2003-10-02 | Sharp Corp | Sputtering target |
| CN101065511A (en) * | 2004-11-17 | 2007-10-31 | 日矿金属株式会社 | Sputtering target, sputtering target backing plate assembly and film deposition system |
| JP2008133520A (en) * | 2006-11-29 | 2008-06-12 | Mitsubishi Materials Corp | Silicon target material |
| CN101550536A (en) * | 2008-03-31 | 2009-10-07 | 沈阳金纳新材料有限公司 | High-purity nickel target for magnetron sputtering |
| CN101586228A (en) * | 2009-02-05 | 2009-11-25 | 田小智 | Method for improving utilization ratio of planar targets in magnetron sputtering coating system |
| JP2012522894A (en) * | 2009-04-03 | 2012-09-27 | アプライド マテリアルズ インコーポレイテッド | Sputter target for PVD chamber |
| TW201243079A (en) * | 2011-03-04 | 2012-11-01 | Sharp Kk | Sputtering target, method for manufacturing same, and method for manufacturing thin film transistor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH08109472A (en) * | 1994-10-14 | 1996-04-30 | Asahi Glass Co Ltd | Target for sputtering and its production |
| JP2015025170A (en) * | 2013-07-26 | 2015-02-05 | 大同特殊鋼株式会社 | Silicon target |
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- 2017-10-03 CN CN201780080220.1A patent/CN110291222B/en active Active
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Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003277925A (en) * | 2002-03-19 | 2003-10-02 | Sharp Corp | Sputtering target |
| CN101065511A (en) * | 2004-11-17 | 2007-10-31 | 日矿金属株式会社 | Sputtering target, sputtering target backing plate assembly and film deposition system |
| JP2008133520A (en) * | 2006-11-29 | 2008-06-12 | Mitsubishi Materials Corp | Silicon target material |
| JP4821999B2 (en) * | 2006-11-29 | 2011-11-24 | 三菱マテリアル株式会社 | Silicon target material |
| CN101550536A (en) * | 2008-03-31 | 2009-10-07 | 沈阳金纳新材料有限公司 | High-purity nickel target for magnetron sputtering |
| CN101586228A (en) * | 2009-02-05 | 2009-11-25 | 田小智 | Method for improving utilization ratio of planar targets in magnetron sputtering coating system |
| JP2012522894A (en) * | 2009-04-03 | 2012-09-27 | アプライド マテリアルズ インコーポレイテッド | Sputter target for PVD chamber |
| TW201243079A (en) * | 2011-03-04 | 2012-11-01 | Sharp Kk | Sputtering target, method for manufacturing same, and method for manufacturing thin film transistor |
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| Publication number | Publication date |
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| JP2018104745A (en) | 2018-07-05 |
| CN110291222B (en) | 2021-09-14 |
| KR20190096983A (en) | 2019-08-20 |
| WO2018123183A1 (en) | 2018-07-05 |
| TWI737839B (en) | 2021-09-01 |
| KR102349236B1 (en) | 2022-01-07 |
| TW201829813A (en) | 2018-08-16 |
| JP6764335B2 (en) | 2020-09-30 |
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