KR20190096983A - Silicone Target Material - Google Patents

Abstract

On the surface of the rectangular plate-shaped target material 10, groove portions 13 extending in the longitudinal direction are formed in the center of the width direction of the target material 10 as a virtual region which is not sputtered by design. The width W ₂ of the groove 13 is 20 to 40% when the width W _{1 on the} surface of the target material 10 is 100%. Moreover, it is preferable that the corner part 14 of the groove part 13 is formed in the curved surface, and the curvature radius of the entry of this corner part 14 is 1.0 mm or more.

Description

Silicone Target Material

The present invention relates to a silicon target material for forming a thin film such as an SiO ₂ film by sputtering. In addition, this international application claims the priority based on Japanese Patent Application No. 250555 (Japanese Patent Application No. 2016-250555) for which it applied on December 26, 2016, and the whole content of Japanese Patent Application 2016-250555 is referred to. Apply to this international application.

Conventionally, a sputtering method is known in which plasma-formed cations are applied to a target material to attach protruding atoms or molecules to a substrate. This sputtering method has the advantage that a thin film can be uniformly formed over a whole large area in a short time as compared with the CVD (Chemical Vapor Deposition) method, the vacuum vapor deposition method, the ion plating method and the like. Specifically, in the sputtering method, a substrate such as a wafer is disposed to face the target, the target surface is impacted by the charged particles so that the target component is separated, and this is adhered to the substrate surface to form a thin film.

However, the target material surface has a front part to which the beam of charged particles is irradiated and a non-irro part to which the beam is not irradiated, and the front part is gradually eroded by irradiation of the beam, but the entire non-irrigation remains without being eroded. . For this reason, the target component discharge | released by the sputtering method adheres to the board | substrate periphery and the non-irro | transfer part in addition to the board | substrate surface, and is deposited with progress of sputtering. As a result, abnormal discharge is generated by the thin film deposited all over the non-erosion of the target surface, and the deposited thin film is peeled off to generate particles, which causes a problem of local failure when it is reattached to the substrate surface.

In order to eliminate this point, the silicon target material in which the non-erosion front part interposed between the teeth front part of the target material surface in the groove form is disclosed (for example, refer patent document 1). In this silicon target material, the depth of the groove | channel of all the non-erosion parts is 5%-50% of the target material thickness in 1 mm or more. Moreover, the corner part of the both ends of the groove | channel of a non-erosion part is formed in the curved surface, and the curvature of the curved surface of the bottom corner part is 0.5 mm or more.

In the silicon target material configured as described above, the non-erosion front portion sandwiched between the front and back portions of the target material surface is formed deeper than the adjacent ear portions, and the entire non-erosion portion is formed in the groove shape, and the bottom of the groove of the non-erosion front portion is formed. Since the part is located at a position receding from the front part of the front part of the teeth, the target component particles separated from the front part of the front part of the teeth are hardly adhered to the front part of the front part of the teeth, and thus the thin film is hardly formed on the front parts of the front parts of the teeth. As a result, since abnormal discharge and particle generation at the time of sputtering are greatly reduced, a high quality thin film can be formed on the substrate surface. Moreover, since the depth of the groove of the front part of the non-irrosphere was formed at 5 mm to 50% of the target material thickness at 1 mm or more, and the curvature of the bottom corner of the groove was formed at 0.5 mm or more, abnormal discharge and generation of particles were prevented. It is possible to restrain effectively.

Japanese Patent Publication No. 4821999 (claim 1, paragraph [0008], [0009], Fig. 1, Fig. 2)

However, in the silicon target material shown in the said patent document 1, since the groove width of all the non-erosion parts is narrow to 15 mm (15%) with respect to 100 mm of width of a target material, ie, the groove of the virtual area which is not sputtered by design. Since the width of is narrower than the width of the non-erosion part not actually sputtered, the time required until the discharge in the initial stage of sputtering is stabilized is long, resulting in a problem that the production stability is lowered. Moreover, in the silicon target material shown by the said conventional patent document 1, although the curvature radius of the corner part of the bottom part of a non-erosion part is 0.5 mm or more, the curvature radius of the corner part entry | entrance is not prescribed | regulated, and the curvature of the entry | entrance of this corner part is not prescribed | regulated. If the radius is sharp, this part is a starting point, and abnormal discharge occurs, and there is also a problem that deposits are deposited on the target material surface.

An object of the present invention is to provide a silicon target material which can shorten the time required until the discharge in the initial stage of sputtering is stabilized, thereby improving the production stability of the thin film-forming substrate. Another object of the present invention is to provide a silicon target material which can suppress abnormal discharge during sputtering, thereby improving the suppression of deposition of deposits on the target material surface.

As the first aspect, the virtual area is not sputtering a design on the surface of the target material of the rectangular plate of the invention, as a silicon target material groove portions are formed extending in the longitudinal direction in the center of the target material in the width direction, groove width (W ₂ When the width (W ₁ ) of the surface of the target material is 100%, it is 20 to 40%.

A second aspect of the present invention is an invention based on the first aspect, wherein the corner portion of the groove portion is further formed as a curved surface, and the radius of curvature R ₁ of the initial entry of the corner portion is 1.0 mm or more.

3rd viewpoint of this invention is invention based on a 1st viewpoint, Comprising: The target material is comprised by arrange | positioning the several target small piece by which the longitudinal direction was divided | segmented in the one row, and the some target in which this groove part was arrange | positioned in the said one row. It is characterized by being formed over a small piece.

In the silicon target material of the first aspect of the present invention, since the width W _{2 of the} groove portion is 20 to 40% when the width W ₁ of the target material surface is 100%, the sputtering apparatus that contributes to the generation of magnetic lines of force. From the arrangement of the magnets, the widths of the grooves and the virtual regions that are not sputtered in design tend to coincide with each other, and the deposits are hardly deposited on the target material surface. As a result, since abnormal discharge resulting from the said deposit can be suppressed, the time required until the discharge of the sputtering initial stage is stabilized can be shortened, and the production stability of the thin film formation base material by sputtering can be improved.

The silicon target material of the second aspect of the invention, and the groove parts of the corner formed in a curved surface, so the radius of curvature (R ₁₎ of the parts of the corner seconds more than 1.0 ㎜, the seconds of the corner portion does not sharply, the abnormal discharge It becomes difficult to become a starting point, and abnormal discharge can be suppressed. As a result, since the thin film can be uniformly and stably formed on the substrate by sputtering using the target material, the productivity of the thin film-forming substrate can be improved, and deposits are hardly deposited on the surface of the silicon target material. Therefore, the lifetime of a silicon target material can be extended.

In the silicon target material of the 3rd viewpoint of this invention, since the several target small piece was arrange | positioned in one row, the silicon target material was comprised, and the groove part was formed over the several target small piece arrange | positioned in the said one row, the liquid crystal screen of a large display And the case where a thin film such as a large solar cell is produced by the sputtering method.

1: is AA sectional drawing of FIG. 3 which shows the silicon target material of 1st Embodiment of this invention.
FIG. 2 is an enlarged cross-sectional view of portion B of FIG. 1. FIG.
3 is a plan view of the silicon target material.
4 is a cross-sectional view taken along line CC of FIG. 3.
5 is an enlarged cross-sectional view of part D of FIG. 4.
6 is an enlarged cross-sectional view of portion E of FIG. 4.
It is a schematic diagram which shows the state which sputtering is carried out using this silicon target material.
It is a figure which shows the manufacturing procedure of the silicon target material of 2nd Embodiment of this invention.
FIG. 9 is a sectional view taken along the line FF of FIG. 8 (c).
10 is a cross-sectional view corresponding to FIG. 1 showing a silicon target material of Example 1 of the present invention.
FIG. 11 is an enlarged sectional view taken along the line G of FIG. 10.
FIG. 12 is an enlarged sectional view of portion H of FIG. 10. FIG.

EMBODIMENT OF THE INVENTION Next, the form for implementing this invention is demonstrated based on drawing.

<1st embodiment>

As shown in FIGS. 1 to 4, the silicon target material 10 is interposed between the teeth front 11 and the teeth front 11 that are actually sputtered at the time of sputtering, and are not actually sputtered at the time of sputtering. Non-erosion front 12. In this embodiment, the said target material 10 is formed in one piece of horizontally long rectangular plate shape by shaving off silicon. Examples of the silicon include polycrystalline silicon, single crystal silicon, and the like, but are not limited thereto. Moreover, the non-erosion front part 12 does not erode in the substantially horizontally long square shape extended in the longitudinal direction in the center of the width direction of the target material 10, and the front part 11 is the target material 10 around it. Erodes into a horizontally long donut that extends in the longitudinal direction of the cavities. Moreover, the groove part 13 is formed in the surface of the target material 10 so that it may correspond with the non-erosion front part 12 by design. That is, the groove part 13 extended in the longitudinal direction in the center of the width direction of the target material 10 is formed in the surface of a target material as a virtual area | region which is not sputtered by design. 1, 3, and 4, the reference numeral 15 in the target material 10 is formed in a substantially rectangular frame shape along the outer circumferential edge of the front teeth 11 of the surface of the target material 10, and from the outer peripheral edges of the front teeth 11; It is a chamfer which consists of four inclined surfaces which fall gradually as it falls, and is not sputtered at the time of sputtering. That is, in the chamfer 15 of these chamfer 15 extended in the longitudinal direction on the both sides of the width direction of the target material 10, the angle with respect to the horizontal line in the cross section of the target material 10 Is in the range of 10 to 70 degrees, and the inclination length is preferably 5 mm or more (FIGS. 1 and 3). Moreover, among these chamfering parts 15, the chamfering part 15 extended in the width direction and formed in the both sides of the longitudinal direction of the target material 10 extends in the longitudinal direction on both sides of the width direction of the target material 10, respectively. It is preferable that it is formed similarly to the formed chamfer 15 (FIGS. 3 and 4). However, the chamfered part 15 extended in the width direction and formed in the both sides of the longitudinal direction of the target material 10 does not need to be formed in accordance with a sputtering apparatus, sputtering conditions, etc. In addition, the surface of the target material 10 is inevitably divided into the front part 11, the non-front part 12, and the chamfer 15 for the structural reasons of a sputtering apparatus. However, the non-erosion part 12 which is not actually sputtered always changes to the groove part 13 of the virtual area which is not sputtered by design because the area of the ear part is different depending on the conditions such as power and gas pressure during sputtering. It does not match. In addition, as sputtering, it is preferable to use magnetron sputtering which can make a dark plasma region by enclosing an electron in a magnetic field using a magnet, and can raise the probability that Ar cation collides with a target material.

On the other hand, as shown in FIG. 1, the width of the groove (13) (W _2), the target material 10 and the width (W ₁₎ of the surface of 20% to 40% to 100%, preferably from 25 to 35%. Moreover, it is preferable that the corner part 14 of the groove part 13 is formed in the curved surface (FIGS. 1 and 2). When setting the radius of curvature of the corner of the corner portion 14 to R ₁ , R ₁ is preferably 1.0 mm or more, and more preferably 1.5 to 3 mm (FIG. 2). Here, limiting the width W ₂ of the groove 13 to the range of 20 to 40% of the width W ₁ of the surface of the target material 10 is less than 20% in the groove portion of the virtual region that is not sputtered in design. The width of the (13) becomes narrower than the width of the non-erosion part 12 which is not actually sputtered, thereby causing abnormal discharge resulting from the deposit deposited on the entire non-irromatic part remaining between the groove part and the ear part, and thus the discharge at the initial sputtering time. The time required until the stabilization cannot be shortened, and when it exceeds 40%, the ear part 11 actually sputtered and the groove 13 of the virtual region that is not sputtered by design partially overlap the groove 13. This is because the life of the target material 10 is shortened by sputtering. In addition, the preferred range for the curvature radius R ₁ of the corner portion 14 of the groove portion 13 to be limited to 1.0 mm or more is that the corner portion 14 is sharply sharpened to be less than 1.0 mm, starting from here. This is because abnormal discharge easily occurs. In addition, the radius of curvature (R _1), the radius of curvature (R ₁₎ in the longitudinal section radius of curvature (R ₁₎ (Fig. 2) and the target material 10 in the cross-section of a target material 10 (FIG. 5 and 6), and their radius of curvature R ₁ is preferably formed in the same manner. Further, both end portions in the longitudinal direction of the groove portion 13 are formed in a substantially channel shape (roughly grooved steel shape) in plan view (FIG. 3). However, both ends of the longitudinal direction of the groove part 13 may be formed in circular arc shape by planar view.

When the radius of curvature of the inside portion of the corner portion 14 of the groove 13 to the R _2, R ₂ is not less than 3 ㎜ is that the preferred,, 3 ~ 9 ㎜ more preferable (Fig. 2). Also, in the cross section of the target material 10, the curvature of the curved surface gradually connected to the inner parts of the curvature radius (R ₂₎ of the upper surface of the bottom wall of the curved surface and a groove 13 (plane) of the corner portion 14 When setting the radius to R ₃ , R ₃ is preferably 10 mm or more (FIG. 2), but the radius of curvature R _{1 at} the beginning of the corner portion 14 and the radius of curvature R _{2 at} the inner side of the corner portion 14 are shown. ), The curved surface of the radius of curvature R ₃ may be eliminated. In other words, the curved surface of the radius of curvature R ₂ may be smoothly connected directly to the bottom wall upper surface (plane) of the groove portion 13. Here, the preferable range for the radius of curvature R ₂ is limited to 3 mm or more because the inclination of the corner portion 14 becomes sharper than 3 mm, so that stress tends to concentrate and crack. Further, is restricted to the preferred range as the radius of curvature (R ₃₎ less than 10 ㎜, is less than 10 ㎜ generates a step in relation to the radius of curvature (R _2), tends to sediment is deposited to the portion This is because it causes cracking. In addition, the radius of curvature (R _2), the radius of curvature (R ₂₎ in the longitudinal section radius of curvature (R ₂₎ (Fig. 2), a target material 10 in the cross-section of a target material 10 ( 5 and 6), and their radius of curvature R ₂ is preferably formed in the same manner. In addition, the radius of curvature (R _3), the radius of curvature (R ₃₎ (Fig. 2), a radius of curvature of the longitudinal section of the target material (10) (R ₃₎ in the cross-section of a target material 10 ( 5 and 6), and their radius of curvature R ₃ is preferably formed in the same manner.

The method of attaching the silicon target material 10 comprised in this way to a sputtering apparatus (film-forming apparatus), and performing sputtering is demonstrated based on FIG. First, the back surface of the target material 10 is laminated | stacked on the copper backing plate 16 through the bonding material (not shown) formed with indium, an indium alloy, etc., and a laminated body is manufactured. In this state, the laminated body is heated to about 200 ° C., so that the target material 10 is bonded to the backing plate 16 via a bonding material. Next, the surface of the target material 10 adhered to the backing plate 16 is opposed to the surface of the substrate 17 at a predetermined interval. Then, after sufficiently exhausting the inside of the film forming apparatus, a predetermined Ar gas is introduced, and sputtering power is applied to the target material, whereby the Ar gas becomes a high temperature plasma and is separated into Ar cations and electrons. The Ar cation (plus charge) collides violently with the target material 10 that is negatively charged. At this time, the element Si which comprises the target material 10 of the part which Ar cation touched falls out, and adheres to the surface of the base material 17. Further, when the sputtering, for example, the introduction of O ₂ gas with the Ar gas, and the realization of this O reactive sputtering by Si react with the target to a _second gas constituting the material 10, the substrate 17 surface SiO ₂ film (not shown) can be formed.

In the silicon target material 10 it is constructed as, to the width (W ₂₎ the target material (Fig. 1 and 2) 10, the width of the surface (W ₁₎ (Fig. 1) of the groove (13) is 100% Since it is 20 to 40% at the time, the width | variety of the sputtering apparatus which contributes to generation | occurrence | production of a magnetic force line, the width | variety of the virtual region which is not sputtered by design, and the groove part 13 will become easy to match, and a deposit will fall on the target material 10 It does not deposit well. As a result, since abnormal discharge resulting from the said deposit can be suppressed, the time required until the discharge of the sputtering initial stage is stabilized can be shortened, and the production stability of the thin film formation base material by sputtering can be improved. In addition, since the radius of curvature R _{1 at} the beginning of the corner portion 14 of the groove portion 13 is 1.0 mm or more (FIG. 2), the cornering of the corner portion 14 is not sharp, and thus the starting point of the abnormal discharge is obtained. It becomes difficult, and abnormal discharge can be suppressed. As a result, since the thin film can be uniformly and stably formed on the base material by sputtering using the said target material 10, while productivity of a thin film formation base material can be improved, the deposit on the surface of the target material 10 is carried out. Since this does not accumulate well, the lifetime of the target material 10 can be extended.

<2nd embodiment>

8 and 9 show a second embodiment of the present invention. In this embodiment, the silicon target material 50 is comprised by arrange | positioning the some target small piece 51-54 divided | segmented in the longitudinal direction, and is comprised, and the several target small piece 51-54 arrange | positioned at the said one row. The groove part 55 is formed over. Specifically, the target material 50 is formed by arranging the horizontally long rectangular plate-shaped target small pieces 51 to 54 in a line with a gap in four longitudinal directions. That is, it is regarded as one target material 50 by arranging four target small pieces 51 to 54 with a gap in a line. In addition, the ear | edge part 56 sputter | spattered at the time of sputtering is eroded and eroded in the shape of one horizontally long donut on the surface of the target material 50 regarded as said one sheet | seat. Moreover, the non-erosion front part 57 which is not sputter | spattered at the time of sputtering is eroded by the substantially horizontally long square shape so that it may be located inward of the ear part 56 among the surfaces of the target material 50 considered as said one sheet | seat. Left without. Moreover, the said groove part 55 is formed of four concave groove parts 55a-55d recessed from the plane of the ear | edge part 56 before sputtering. 8 and 9, the target material 50 regarded as one sheet is formed to extend in the longitudinal direction on both sides in the width direction of the teeth front part 56, and the teeth front part 56 It is a chamfer which consists of two inclined surfaces which gradually descend as it falls from the outer peripheral edge, and is not sputtered at the time of sputtering. In these chamfers 58, the angle with respect to the horizontal line in the cross section of the target material 50 exists in the range of 10-70 degree | times, and it is preferable that the inclination length is 5 mm or more. Moreover, the said chamfer is not formed in the surface extended in the width direction on the both sides of the tooth front part 56 in the longitudinal direction among the surface of the target material 50 regarded as one sheet (FIGS. 8 and 9). However, you may form the same chamfer as the said chamfer 58 in these surfaces. In addition, when arranging four target small pieces 51-54 in a line, the clearance gap 59 was considered in consideration of thermal expansion of each target small piece 51-54.

On the other hand, the width W ₂ of the groove part 55 of the target material 50 regarded as one sheet is 20 to 20 when the width W _{1 of the} surface of the target material 50 regarded as one sheet is 100%. It is 40%, Preferably it is 25 to 35%. Moreover, it is preferable that the corner part of the groove part 55 is formed in a curved surface. When making the radius of curvature of the corner entrance into R ₁ , R ₁ is preferably 1.0 mm or more, and more preferably 1.5 to 3 mm. Moreover, when making the curvature radius of the inner part of a corner part into R <_2> , it is preferable that R <_2> is 3 mm or more, It is more preferable that it is 3-9 mm. In addition, when a radius of curvature of the upper surface of the bottom wall of the groove portion 55 in the cross section of the target material 50 in the R _3, R ₃ is the radius of curvature (R ₁₎ of not less than 10 ㎜ preferred, a corner of the seconds Depending on the combination of the radius of curvature R ₂ at the inner side of the corner portion, the curved surface of the radius of curvature R ₃ may not be provided. In other words, the curved surface of the radius of curvature R ₂ may be gently connected directly to the bottom wall upper surface (plane) of the groove portion 55. Since the reason for limitation of these numerical ranges is the same as the reason for limitation of the numerical range of 1st Embodiment, the repeated description is abbreviate | omitted. In addition, the shape of both end surfaces of the groove portion 55 in the longitudinal direction, that is, the end portions of the recessed groove portions 55a and 55d among the four recessed groove portions 55a to 55d are formed in an arc shape in plan view (FIG. 8). ). However, the end portions of the concave groove portions 55a and 55d may be formed in a substantially channel shape (roughly grooved steel shape) in plan view. Except the above, it is comprised similarly to 1st Embodiment.

In order to manufacture the target material 50 comprised in this way, a square plate-like silicon | silicone is first cut out from the square pillar-shaped polycrystal silicon or cylindrical single crystal silicon. Subsequently, a plurality of single-piece-shaped target small pieces are cut out from this square plate-shaped silicon | silicone. In this embodiment, four single-piece | large target small pieces 51-54 are cut out from the square plate-like silicon 61 (FIG. 8 (a)). Next, the groove part 55 and the chamfer part 58 are formed in the surface of these target small piece 51-54 (FIG. 8 (b)). Moreover, these four target small pieces 51-54 are lined up in the backing plate 62 with the gap 59, and are bonded by the bonding material (FIG. 8 (c) and 9). Except the above, it is comprised similarly to 1st Embodiment.

In the silicon target material 50 configured as described above, since the four target small pieces 51 to 54 are arranged in a row, the single target material 50 is formed, so that a thin film such as a liquid crystal screen of a large display or a large solar cell is used. Is preferable in the case of producing by sputtering method. Since the action and effect of that excepting the above are substantially the same as the action and effect of 1st Embodiment, the repeated description is abbreviate | omitted.

Example

Next, the Example of this invention is described in detail with a comparative example.

<Example 1>

As shown in FIGS. 10-12, first, the polycrystalline silicon is scraped off, and the rectangular plate-shaped silicon target material 110 whose board length, board width, and board thickness are 800 mm, 100 mm, and 5 mm, respectively was manufactured. Next, in this target material 110, the groove part 113 (in the design, the groove part 113 is formed so that it may correspond with the non-erosion front part 112) and the chamfer part 115 were formed by machining. Specifically, on the surface of the rectangular plate-shaped target material 110, a groove portion 113 extending in the longitudinal direction in the center of the width direction of the target material 110 is formed as a virtual region which is not sputtered in design, and chamfered. The base 115 was formed along the outer circumferential edge of the target material 110 in a substantially rectangular frame shape, and on the inclined surface (inclined angle: 45 degrees) gradually descending from the surface of the target material 110. At this time, since the width (groove width) W _{2 of the} groove portion 113 was 27 mm, the width (groove width) W ₂ of the groove portion 113 was the width of the target material 110 (plate width: 100). ㎜) (it was 27% with respect to W _1). That is, the ratio (groove width ratio) of the groove width W ₂ to the plate width W ₁ was 27%. Moreover, the corner part 114 of the groove part 113 was formed in the curved surface (FIGS. 10-12). At this time, the radius of curvature R _{1 at} the beginning of the corner portion 114 is formed to be 1.5 mm, the radius of curvature R _{2 at} the inner portion of the corner portion 114 is formed to be 4.0 mm, and the target material 110 is formed. the cross-sectional radius of curvature (R ₃₎ of the curved surface gradually connected to the radius of curvature (R ₂₎ a top surface the bottom wall of the curved surface and the groove 113 (plane) of the in the form a 12.0 ㎜ (Figs. 11 and 12 ). This target material 110 was defined as Example 1. In addition, since the depth (groove depth) of the groove portion 113 was formed to be 2.5 mm, the ratio (groove depth ratio) of the depth of the groove portion 113 to the thickness (plate thickness) of the target material 110 became 50%. .

<Examples 2 to 22 and Comparative Examples 1 to 5>

The target material of Examples 2-22 and Comparative Examples 1-5 was formed so that each sub dimension might be a numerical value shown in Table 1 and Table 2. In addition, each sub dimension other than the numerical value shown in Table 1 produced the target material similarly to Example 1. In addition, the target material of Example 22 divides the target material of 800 mm in length of Example 14 into two so that each length may be 400 mm.

<Comparative examination 1 and evaluation>

For the target materials of Examples 1 to 22 and Comparative Examples 1 to 5, the time T required until the discharge in the initial stage of sputtering was stabilized, and the set number N that could be used up to a predetermined thickness were measured, respectively. .

(1) Measurement method of time (T) required until discharge in the initial stage of sputtering is stabilized

First, film-forming was started on the surface of a base material by sputtering using a target material on condition of the following.

(a) The power input was DC 1000 W.

(b) The total pressure was 0.4 kPa.

(c) As the sputtering gas, an Ar gas having a flow rate of 28.5 sccm and an O ₂ gas having a flow rate of 1.5 sccm were used.

(d) The distance of a target material and a base material was 70 mm.

Next, the variation in voltage, current and pressure at the time of sputtering was confirmed with a voltmeter, an ammeter, and a pressure gauge, respectively, and it was judged that the discharge in the initial stage of sputtering was stable at the time when all of the voltage, current, and pressure did not change. Then, the time from when the discharge was started until the discharge was stabilized was measured. The said operation was performed 3 times and the average value was computed. This average value was made into time (T) required until the discharge of the sputtering initial stage was stabilized.

(2) The measuring method of the set number N which was usable to predetermined thickness

First, it formed into a film on the surface of a base material by sputtering using the target material (1 set) on the conditions of said (1) (a)-(d), and formed into a film until a target material cracked. Next, the plate thickness at the time of cracking of a target material was measured, and the plate | board thickness after use with respect to the plate | board thickness before start of use was computed as a percentage. This calculated value was 50% or less, counted as the set number N which could be used to predetermined thickness. The said operation was performed by 10 sets with respect to the target material of Examples 1-22 and Comparative Examples 1-5. These results are shown in Table 1 and Table 2.

As is clear from Table 1 and Table 2, in Comparative Examples 1 and 2 in which the groove width ratios of the groove portions were small at 15% and 18%, the time T required until the discharge at the initial stage of sputtering was stabilized was 79 minutes. And it was long in 93 minutes, and the set number N which could be used to predetermined thickness was all less than five sets. Moreover, in the comparative examples 3-5 in which the groove width ratio of the groove part was large as 42-50%, the time T required until the discharge of the sputtering initial stage was stabilized was 81-96 minutes long, and it can use it to predetermined thickness. The set number N which had existed was 4-5 sets. On the other hand, in Examples 1-22 in which the groove width ratio of the groove portion was in an appropriate range of 20 to 40%, the time T required until the discharge at the initial stage of sputtering was stabilized was shortened to 20 to 38 minutes. The set number N which could be used to predetermined thickness increased to 7-10 sets.

Further, in this groove portion of the groove width ratio of 40% and 23%, but within an acceptable range, Examples 20 and 21, the radius of curvature (R ₁₎ of the groove portion of the corner portion seconds went as small as 0.4 ㎜ and 0.8 ㎜, sputtering initial Although the time T required until the discharge was stabilized was short at 38 minutes and 36 minutes, the number N of sets that could be used up to a predetermined thickness was all seven sets, which was small among many. On the contrary, Example 1 in which the groove width ratio of the groove portion was in a suitable range of 20 to 40%, and the curvature radius R ₁ of the corner portion entry of the groove portion was in a suitable range (1.0 mm or more) at 1.0 to 3.3 mm. In 19 to 22 and 22, the time T required until the discharge in the initial stage of sputtering is stabilized is shorter than Examples 20 and 21 in 20 to 33 minutes, and the set number N that can be used to a predetermined thickness is 8 It became more than Example 20 and 21 in-10 sets.

Moreover, in Example 14 using the target material of 1 piece of 800 mm in length, and Example 22 using the target material divided into 2 sheets of 400 mm in length, the time required until the discharge of the sputtering initial stage was stabilized (T ) Was almost the same in 31 minutes and 33 minutes, respectively, and the set number N that could be used up to a predetermined thickness was the same in all nine sets. As a result, it was found that the division in the longitudinal direction of the target material hardly affects the time T required until the discharge in the initial stage of sputtering is stabilized or the set number N that can be used up to a predetermined thickness. .

Industrial availability

The silicon target material of this invention can be used for the target material of sputtering.

10, 50, 110: silicon target material
13, 55, 113: groove
14, 114: corner
51-54: target fragment

Claims (3)

As a virtual area | region which is not sputtered by design on the surface of the rectangular-shaped target material, The silicon target material in which the groove part extended in the longitudinal direction was formed in the center of the width direction of the said target material,
A silicon target material, characterized in that 20 to 40% when the width (W ₂₎ of the groove portion to the width (W ₁₎ the target material to be 100%. The method of claim 1,
Angled portions of the groove portion is formed in a curved surface, the radius of curvature (R ₁₎ of the corner portion 1.0 ㎜ seconds or more, a silicon target material. The method of claim 1,
A silicon target material, wherein the target material is configured by arranging a plurality of target small pieces divided in the longitudinal direction in one row, and the groove portion is formed over a plurality of target small pieces arranged in the one row.

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