CN104120392A - Magnet unit and sputtering apparatus having the same - Google Patents
Magnet unit and sputtering apparatus having the same Download PDFInfo
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- CN104120392A CN104120392A CN201410143705.9A CN201410143705A CN104120392A CN 104120392 A CN104120392 A CN 104120392A CN 201410143705 A CN201410143705 A CN 201410143705A CN 104120392 A CN104120392 A CN 104120392A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
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- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a magnet unit, comprising a clamp, a first magnet and a second magnet. The first magnet is shaped like a straight line on the clamp by arrangement. By arrangement, the second magnet is arranged on the clamp and surrounds the first magnet. At least one of an interval and an angle between the first magnet and the second magnet is variable in at least two areas. The invention also provides a sputtering apparatus having the same magnet unit.
Description
Technical field
The present invention relates to a kind of magnet unit and a kind of sputtering equipment that comprises described magnet unit, and more particularly, relate to a kind of magnet unit for rotational circle cylindricality target and a kind of sputtering equipment that comprises described magnet unit.
Background technology
Sputtering equipment is deposit film in the time manufacturing semi-conductor, liquid-crystal display (LCD) or solar cell.For instance, magnetron sputtering apparatus by gas inject vacuum chamber to produce plasma body, make ionized gas particles with by the target material impacts of deposition, and then on substrate deposition by collision the particle of sputter.In order to form the magnetic line of force with tunnel-shaped on target, magnet unit is arranged on to the rear portion of target herein.Magnetron sputtering apparatus can be manufactured film and the ion of electric field acceleration is deposited on substrate thick and fast at relatively low temperature, and then is used substantially.
According to configuration, target can be divided into fixing target and rotational circle cylindricality target.Compared with fixing target, rotational circle cylindricality target can improve its utilization coefficient more.Rotational circle cylindricality target is attached to the outer wall of cylindrical penstock, and magnet unit is arranged on penstock inside.Magnet unit is formed by two magnets with opposed polarity, and is attached to the clip with cylinder form.Herein, magnet unit is provided with: the first magnet, has vertical bar shape to form a certain magnetic line of force and generation plasma body runway on the surface of cylindrical target; And second magnet, separate with the first magnet and there is closed loop shape with around the first magnet.Herein, in the long limit of the first magnet and the second magnet maintains same intervals.And the first magnet and the second magnet have opposed polarity, for example, the first magnet has S polarity and the second magnet has N polarity so that magnet has N-S-N polarity.In the magnetic line of force being formed by the first magnet described above and that configure and the second magnet, level forms runway in the magnetic line of force of cylindrical target (, perpendicular to electric field), and then sputter is by the surface of the cylindrical target of corrosion.
But, the electronics moving in the surface of cylindrical target moves by linear fashion in the central authorities of target, but long limit and minor face part connected to one another in corner from the second magnet move up and down by curve mode to certain part (, the target of intersection corner) on long limit.The electronics moving along the surperficial runway of cylindrical target does not receive a certain acceleration and from corner quick travel.Therefore, occur to collect and there is the phenomenon of high-octane electronics intersecting corner, and then the formation that increases in one way ion produces unsettled plasma body and inhomogeneous corrosion occurs making.Finally, more there is the corrosion of cylindrical target at intersection corner, and then reduce the efficiency that uses cylindrical target.That is to say, because there is the life-span that the degree of depth of the groove being corroded on two ends of cylindrical target of a large amount of targets corrosion limits cylindrical target, so can not avoid the reduction of utilising efficiency.And, because there is macro-corrosion in corresponding zone, so the raw-material amount of separating with target increases, and then reduce the homogeneity of the film on substrate.
Summary of the invention
The invention provides a kind of can raising uses the efficiency of cylindrical target and improves the inhomogeneity magnet unit of thin film deposition and a kind of sputtering equipment that comprises described magnet unit.
The present invention also provide a kind of can be by making the first magnet use the efficiency of cylindrical target and improve the inhomogeneity magnet unit of thin film deposition and a kind of sputtering equipments that comprise described magnet unit improve different with opposite side of a side from the angle between the second magnet around described the first magnet.
According to example embodiment, a kind of magnet unit comprises: clip; The first magnet, through arranging to have rectilinear form on described clip; And second magnet, being arranged on described clip with around described the first magnet, the interval between wherein said the first magnet and described the second magnet is different at least two regions with at least one in angle.
Described the second magnet can be included in the first long limit and the second long limit separating with described the first magnet on the longitudinal direction of described the first magnet and separate with described the first magnet and will described first grow limit and the described second long limit the first minor face connected to one another and the second minor face.
Interval between described the first magnet and the described long limit of described the second magnet and at least one in angle from described the first minor face and described the second minor face and the described first long limit and the described second long limit respectively part connected to one another at least two regions of the described longitudinal direction of described the first magnet, can differ from one another.
Described magnet unit can comprise: first area, the wherein described longitudinal direction from an end of described magnet to described the first magnet, the interval between described the first magnet and the described first long limit and at least one in angle are greater than described the first magnet and described second and grow interval between limit and at least one in angle; And second area, the wherein described longitudinal direction from another end of described magnet to described the first magnet, the described interval between described the first magnet and the described first long limit and at least one in described angle are less than described the first magnet and described second and grow described interval between limit and at least one in described angle.
Described first area and described second area can be set to have from described the first minor face and described the second minor face and the described first long limit and the described second long limit approximately 1/8 to approximately 1/2 the length to the described longitudinal direction of described the first magnet unit of part connected to one another respectively.
Described interval between described the first magnet and the described long limit of described the second magnet can be at least about 12 millimeters in the region with large-spacing, and can be approximately 9 millimeters to approximately 11 millimeters having in closely-spaced region.
Described angle can be approximately 28 ° in the region with wide-angle, and can be approximately 25 ° to approximately 27 ° having in low-angle region.
According to another example embodiment, a kind of sputtering equipment comprises: penstock, has cylinder form and rotatable; Magnet unit, is arranged on described penstock inside; Cylindrical target, is arranged on described penstock outside; And substrate support, and support substrates relative with described target, wherein said magnet unit comprises clip, through arranging to there is the first magnet of rectilinear form on described clip and being arranged on described clip with the second magnet around described the first magnet, and the interval between described the first magnet and described the second magnet is different at least two regions with at least one in angle.
Described sputtering equipment can comprise: first area, the wherein described longitudinal direction from an end of described magnet to described the first magnet, the interval between described the first magnet and the described first long limit and at least one in angle are greater than described the first magnet and described second and grow interval between limit and at least one in angle; And second area, the wherein described longitudinal direction from another end of described magnet to described the first magnet, the described interval between described the first magnet and the described first long limit and at least one in described angle are less than described the first magnet and described second and grow described interval between limit and at least one in described angle.
Described first area and described second area can be set to have from described the first minor face and described the second minor face and the described first long limit and the described second long limit approximately 1/8 to approximately 1/2 the length to the described longitudinal direction of described the first magnet unit of part connected to one another respectively.
Brief description of the drawings
Can understand in more detail example embodiment from following description by reference to the accompanying drawings.
Fig. 1 is according to the schematic cross section of the sputtering equipment of example embodiment.
Fig. 2 A is according to the schematic plan of the magnet unit of example embodiment and cross-sectional view to Fig. 4 B.
Fig. 5 A is to corrosion curve and the ion distribution near the intersection corner changing according to the angle intersection corner of Fig. 5 F explanation magnet unit.
Fig. 6 explanation is near the corrosion curve changing according to the angle intersection corner of magnet unit in the time that target rotates.
Fig. 7 explanation in the time that target rotates near the intersection corner of magnet unit according to the corrosion curve of length variations.
Main element label declaration
100: magnet unit
110: clip
120: the first magnets
130: the second magnets
132a: long limit
132b: long limit
134a: minor face
134b: minor face
200: cylindrical penstock
300: cylindrical target
400: substrate support
S: substrate
Embodiment
Hereinafter, will describe example embodiment of the present invention in detail referring to accompanying drawing.But, the invention is not restricted to embodiment described below, but can be presented as various different shapeies.Only provide embodiment below to disclose all sidedly the present invention and allow those skilled in the art fully to understand scope of the present invention.
Fig. 1 is according to the schematic cross section of the sputtering equipment of example embodiment, and Fig. 2 A is according to schematic plan and the cross-sectional view of the magnet unit 100 of example embodiment to Fig. 4 B.That is to say, Fig. 2 A, Fig. 3 A and Fig. 4 A are the vertical views of magnet unit 100, and Fig. 2 B, Fig. 3 B and Fig. 4 B are respectively the cross-sectional view of explanation along line A-A ', the B-B ' of Fig. 2 A, Fig. 3 A and Fig. 4 A and the part of C-C ' intercepting.
Referring to Fig. 1, sputtering equipment can comprise magnet unit 100, is wherein provided with the cylindrical penstock 200 of magnet unit 100, is fixed to the outside cylindrical target 300 of penstock 200 and the substrate support 400 of support substrates S.Herein, target 300 and substrate support 400 can arrange relative to one another.For instance, target 300 can be arranged on top and substrate support 400 and can be arranged on bottom.Or target 300 is arranged on bottom and substrate support 400 is arranged on top.In described embodiment, target 300 is arranged on top and substrate support 400 is arranged on bottom.
Magnet unit 100 is arranged on penstock 200 inside and can comprises clip 110, the first magnet 120 and the second magnet 130.Clip 110 is arranged to separate with the internal surface of penstock 200, for example, can be arranged on along the longitudinal direction of penstock 200 central authorities of the inside of penstock 200.Clip 110 can have the various structures that can fix the first magnet 120 and the second magnet 130, for example, can be set to cylinder form.As shown in Figure 2, the first magnet 120 can be set to strip and can be attached to a surface of clip 110.Herein, the first magnet 120 can be set to relative with substrate S in vertical direction.For example, and as shown in Figure 2, the second magnet 130 can be set to () closed loop with around the first magnet 120.That is to say, the second magnet 130 can comprise two long limit 132a that separate from the first magnet 120 by some interval with 132b and be connected respectively two minor face 134a and the 134b of two long limit 132a and 132b.Herein, the interval between in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b can be different in a certain region.That is to say, in the region of meeting on the longitudinal direction of the first magnet 120 with the minor face 134a of the second magnet 130 and 134b and long limit 132a and 132b in interval between one in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b in a certain region, (, intersect corner near) can be different.Herein, the interval between the side surface of in long limit 132a and the 132b of the side surface of the first magnet 120 and the second magnet 130 can be different.For instance, as shown in Figure 2, from the top of the first magnet 120 to central first area, the interval between a long limit 132a of the first magnet 120 and the second magnet 130 is greater than the interval between another long limit 132b of the first magnet 120 and the second magnet 130.And, from the central authorities of the first magnet 120 to the second area of bottom, the interval between a long limit 132a of the first magnet 120 and the second magnet 130 is less than the interval between another long limit 132b of the first magnet 120 and the second magnet 130.In other words, the second magnet 130 long limit 132a maintains the first interval with the first magnet 120 and in second area, maintains the second interval less than the first interval in first area.And another long limit 132b of the second magnet 130 maintains the second interval with the first magnet 120 and maintain first interval larger than the second interval in second area in first area.Therefore,, in magnet unit 100, the interval of in long limit 132a and the 132b of the first magnet 120 and the second magnet 130 can be different at least two regions.Herein, the first interval can be the general interval between the first magnet 120 and the second magnet 130, for example, can be approximately 12 millimeters, and the second interval can be less than 12 millimeters, is approximately 9 millimeters to approximately 11 millimeters.On the other hand, because the first magnet 120 and the second magnet 130 through arrange so that side surface perpendicular to cylindrical clip 110, so the surface of clip 110 and the first magnet 120 and the second magnet 130 shapes are at an angle.Therefore, larger in the compare great region, interval between in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b one of described angle, and have in more closely-spaced region less.That is to say, in first area, the first angle between a long limit 132a of the first magnet 120 and the second magnet is greater than the second angle between another long limit 132b of the first magnet 120 and the second magnet 130, and in second area, the second angle between a long limit 132a of the first magnet 120 and the second magnet is less than the first angle between another long limit 132b of the first magnet 120 and the second magnet 130.Herein, the first angle can be the general angle (for example, approximately 28 °) between the first magnet 120 and the second magnet 130 being arranged on cylindrical clip 110, and the second angle can be less than 28 °, is approximately 25 ° to approximately 27 °.As mentioned above, interval between one in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b and at least one in angle are set on its longitudinal direction different, and then one from the long limit 132a of the second magnet 130 and 132b with minor face 134a and 134b in a part of meeting each other more reduce the generation of corroding to the region of the part of in long limit 132a and 132b (, intersect corner) in than other region.Therefore, the local corrosion of target 300 reduces, and then improves the homogeneity that uses the efficiency of target 300 and improvement to be deposited on the thickness of the film in substrate S.
Penstock 200 is formed as cylinder form, is wherein provided with magnet unit 100 and is fixed with in its surface cylindrical target 300.And penstock 200 is towards substrate S and relative with substrate support 400.That is to say, in the time that substrate support 400 is arranged on bottom, penstock 200 can be arranged on top.Penstock 200 is configured to be connected to the driver element (not shown) that comprises rotatable electric motor.And, for the melting of the target 300 that prevents from being caused by the thermal conductance of the plasma body occurring in sputtering technology and disengaging and in order to prevent the degaussing of magnet unit 100, refrigerant circulation pipe (not shown) can be set in penstock 200.That is to say, make refrigerant circulation by refrigerant circulation pipe, and then it is cooling and prevent that heat is delivered to magnet unit 100 to make to be attached to the cylindrical target 300 of penstock 200.
Target 300 is set to cylinder form and adheres to and be fixed to the outside surface of penstock 200.Therefore, target 300 can rotate according to the rotation of penstock 200.Target 300, by the material being deposited in substrate S is formed, for example, can be metal or wraps metallic alloy.And target 300 can be metal oxide, metal nitride or dielectric medium.For instance, target 300 can form by having in Mg, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Pd, Pt, Cu, Ag, Au, Zn, A1, In, C, Si and Sn one material as substrate.
Substrate support 400 support substrates S so that deposition material be deposited on equably in substrate S.Substrate support 400 can by use stationary member fix substrate S edge or can be at the rear portion of substrate S stationary substrate S.In the time that sputtering equipment is straight-line type sputtering equipment, substrate support 400 can be the loader that comprises stationary member that can stationary substrate S.And in the time that substrate S is installed, substrate support 400 can move in one direction.Therefore, the buanch unit of for example roller (not shown) can be arranged on the bottom of substrate support 400.A part for substrate support 400 can be served as transfer component.That is to say, substrate support 400 support substrates S and in one direction translate substrate S, thus the starting material that remove from target 300 are deposited on substrate S.On the other hand, substrate S can be the substrate for the manufacture of semi-conductor, liquid-crystal display (LCD) or solar cell, and can be silicon wafer or glass.In described embodiment, substrate S is the large substrate being formed by glass.
One side of having divided in a longitudinal direction with reference to central authorities based on the first magnet 120 on the other hand, and opposite side are described interval between one that has in two long limit 132a of the first magnet 120 and the second magnet 130 and 132b and at least not same first area and the second area in angle.But, first area and second area can be set in a longitudinal direction from a side of the first magnet 120 and the end of opposite side approximately 1/8 to approximately 1/3.That is to say, as shown in Figure 3, first area that the interval between one of the first magnet 120 and the second magnet long limit 132a and at least one in angle are greater than the interval between another long limit 132b of the first magnet 120 and the second magnet 130 and at least one in angle can be set to 1/3 of length from an end of the first magnet 120 to the first magnet 120.And second area that the interval between a long limit 132a of the first magnet 120 and the second magnet 130 and at least one in angle are less than the interval between another long limit 132b of the first magnet 120 and the second magnet 130 and at least one in angle can be set to 1/3 of length from another end of the first magnet 120 to the first magnet 120.On the other hand, region between first area and second area (, the central authorities 1/3 of the length of the first magnet 120) become the 3rd region, wherein the interval between the interval between one of the first magnet 120 and the second magnet 130 long limit 132a and another long limit 132b of at least one and the first magnet 120 and the second magnet 130 in angle is identical with at least one in angle.
And, as shown in Figure 4, first area that the interval between one of the first magnet 120 and the second magnet 130 long limit 132a and at least one in angle are greater than the interval between another long limit 132b of the first magnet 120 and the second magnet 130 and at least one in angle can be set to 1/6 of length from an end of the first magnet 120 to the first magnet 120.And second area that the interval between a long limit 132a of the first magnet 120 and the second magnet 130 and at least one in angle are less than the interval between another long limit 132b of the first magnet 120 and the second magnet 130 and at least one in angle can be set to 1/6 of length from another end of the first magnet 120 to the first magnet 120.On the other hand, region between first area and second area (, the central authorities 4/6 of the length of the first magnet 120) become the 3rd region, wherein the interval between the interval between one of the first magnet 120 and the second magnet 130 long limit 132a and another long limit 132b of at least one and the first magnet 120 and the second magnet 130 in angle is identical with at least one in angle.
On the other hand, in described embodiment, in order to make the interval between in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b and at least one part in angle different, the shape of amendment the second magnet 130.But the interval between in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b and at least one in angle can by revising the shape of the first magnet 120, to become part different.For instance, have around the second magnet 130 of the outside closed loop shape of the first magnet 120 and be provided with the long limit 132a and the 132b that are formed as perpendicular shape, and can arrange by a region is extended to a certain length from an end of the first magnet 120 towards another long limit 132b of the second magnet 130.And the second magnet 130 can be by extending another region to arrange towards a long limit 132a of the second magnet 130 from an end of the first magnet 120.
As mentioned above, in described embodiment, because it is different at least two regions with at least one in angle that magnet unit 100 is fabricated to the interval between that makes in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b, so that the side that crossing angle falls and the size of opposite side differ from one another, and then the width of the transfer path of amendment electronics is collected the phenomenon of electronics to alleviate intersecting corner.And interval and angle between one in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b are revised, and then control the influential magnetic force of acceleration tool to electronics.Therefore, intersect concentrated ionization on corner through distributing so that the etching extent of centre increases and makes to intersect the etching extent of corner reduces, and then form more stable plasma body and corrosion curve uniformly.Therefore, the local loss of target 300 reduces, and then improves the efficiency that uses target 300 and the homogeneity of improving film.
Embodiment
According to the magnet unit of example embodiment be by first area and second area are formed into the central authorities of the first magnet 120 by 1/2 of the length of the first magnet 120 and by the angle between in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b from 1 ° of 28 ° of minimizing until 25 ° manufacture, between first area and second area in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b one and the other side, there are different angles.Be fabricated to and the angle between a long limit of the first magnet 120 and the second magnet 130 be maintained to 28 ° and be fabricated to respectively angle between first area and second area is increased to 1 ° until 30 ° according to the magnet unit of comparative example 2 and 3 in All Ranges according to the magnet unit of comparative example 1.The corresponding depth of corrosion with central authorities according to the intersection corner of the magnet unit of embodiment and comparative example relatively remaining static, the corresponding ratio of the depth of corrosion in intersection corner and central depth of corrosion, and ionic weight, as shown in table 1.And Fig. 5 A intersects corrosion curve and the ion distribution in corner to explanation in Fig. 5 F.In other words, Fig. 5 A explanation corrosion curve and the ion distribution in the time that the angle between in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b maintains 25 °.Similarly, Fig. 5 B illustrates respectively corrosion curve and the ion distribution in the time that the angle between in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b maintains 26 °, 27 °, 28 °, 30 ° and 31 ° to Fig. 5 E.
Table 1
As known to Fig. 5 E from table 1 and Fig. 5 A, with general status (, the angle forming between one in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b is the comparative example 1 of 28 °) compared with, under the situation of embodiment that reduces the angle between first area and second area, the depth of corrosion of intersection corner reduces and the depth of corrosion increase of centre simultaneously.But, angle being increased under the situation of comparative example 2 and 3 that is greater than 28 °, the depth of corrosion of intersection corner reduces, but the depth of corrosion of centre also reduces simultaneously.Therefore, the ratio of the intersection depth of corrosion of corner and the depth of corrosion of centre is along with angle reduces to become fabulous.And in the time that angle reduces, the ionic weight of intersection corner reduces.But in the time that angle increases, the ionic weight of corner increases.Therefore,, in the time that an angle forming in long limit 132a and 132b by the first magnet 120 and the second magnet 130 reduces, depth of corrosion and the ionic weight of intersection corner can reduce, and more particularly, in the time that angle reduces 2 °, show best character.
And, in embodiment 1,2 and 3, magnet unit be manufactured to make by an angle forming in long limit 132a and the 132b of the first magnet 120 and the second magnet 130 be 26 ° and make first area and second area on the longitudinal direction of the first magnet 120, be the first magnet 120 length 1/2,1/3 and 1/6.And, example as a comparison, magnet unit is manufactured to the angle forming making by long limit 132a and the 132b of the first magnet 120 and the second magnet 130 and in All Ranges, is all 28 °.As mentioned above, in table 2, compare according to the intersection corner of the length variations of first area and second area and the depth of corrosion of centre the ratio of the intersection depth of corrosion of corner and the depth of corrosion of centre, and ionic weight.
Table 2
As known from table 2, with general status (, the angle forming between one in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b is the comparative example 1 of 28 °) compared with, near the first magnet 120 intersecting corner and the angle between the second magnet 130 are being reduced to 26 ° and reduce under the situation of embodiment of length, the depth of corrosion of corner of intersecting reduces and the depth of corrosion increase of centre simultaneously simultaneously.That is to say, the length of the interval between in the long limit 132a of the first magnet 120 and the second magnet 130 and 132b and at least one in angle increases more, and the depth of corrosion in intersection corner can diminish and the depth of corrosion of central authorities can increase.And along with length increase is more, the ionic weight of intersection corner becomes less.But compared with comparative example, under the situation of embodiment 3, although the depth of corrosion of centre diminishes, the ratio of the intersection depth of corrosion of corner and the depth of corrosion of centre becomes better compared with comparative example.Can know that embodiment 1 and 2 is better than comparative example.
On the other hand, Fig. 6 explanation when target 300 rotates, intersect corner neighbouring according to the corrosion curve of the variation of an angle forming in long limit 132a and 132b by the first magnet 120 and the second magnet 130.That is to say, magnet unit 100 is manufactured to increases by 1 ° until approximately 30 ° by near angle intersection corner from approximately 25 °.Therefore be, that under the situation of 25 ° and 26 °, depth of corrosion is 0.94 in angle.And in the time that angle is 27 °, depth of corrosion is 0.91.And under the situation of 28 °, 29 ° and 30 °, depth of corrosion is respectively 0.84,0.87 and 0.87.Therefore,, along with the angle between in the long limit 132a of the first magnet and the second magnet 130 and 132b diminishes, it is large that depth of corrosion becomes.And Fig. 7 illustrates that target 300 is when rotated according to the corrosion curve of the length variations of first area and second area.The embodiment that maintains the angle of 26 ° and the length of first area and second area is formed into respectively to 1/2,1/3 and 1/6 length from top side is made comparisons with the comparative example of the angle that maintains 28 °.Therefore, in the time that length is 1/2, depth of corrosion is 0.94, and in the time that length is 1/3, depth of corrosion is 0.94, and in the time that length is 1/6, depth of corrosion is 0.9.Relatively, be that under the situation of comparative example of 28 °, depth of corrosion is 0.84 in angle.
According to embodiment, a kind of magnet unit is provided, wherein the first magnet is arranged on clip as rectilinear form, and the second magnet is set to around the first magnet, and the interval between the first magnet and the second magnet and at least one in angle are different near at least two regions that intersect corner.
According to embodiment, intersection one side in corner and the large I of opposite side differ from one another, and then the width of the transfer path of change electronics is intersecting the phenomenon of corner collection electronics to alleviate.And, can control the influential magnetic force of acceleration tool to electronics.Therefore, intersect concentrated ionization on corner through distributing so that the etching extent of centre increases and makes to intersect the etching extent of corner reduces, and then form more stable plasma body and corrosion curve uniformly.Therefore, the local loss of target reduces, and then improves the efficiency that uses target and the homogeneity of improving film.
Although magnet unit and the sputtering equipment that comprises described magnet unit are described with reference to specific embodiment, be not limited to this.Therefore, those skilled in the art should be readily appreciated that in the situation that not departing from defined by the appended claims the spirit and scope of the present invention and can carry out various amendments and change to it.
Claims (10)
1. a magnet unit, is characterized in that comprising:
Clip;
The first magnet, through arranging to have rectilinear form on described clip; And
The second magnet, is arranged on described clip with around described the first magnet,
Interval between wherein said the first magnet and described the second magnet is different at least two regions with at least one in angle.
2. magnet unit according to claim 1, wherein said the second magnet is included in the first long limit and the second long limit separating from described the first magnet on the longitudinal direction of described the first magnet and separate with described the first magnet and will described first grow limit and the described second long limit the first minor face connected to one another and the second minor face.
3. magnet unit according to claim 2, the interval between wherein said the first magnet and the described long limit of described the second magnet and at least one in angle from described the first minor face and described the second minor face and the described first long limit and the described second long limit respectively part connected to one another at least two regions of the described longitudinal direction of described the first magnet, differ from one another.
4. magnet unit according to claim 3, comprising:
First area, the wherein described longitudinal direction from an end of described magnet to described the first magnet, the interval between described the first magnet and the described first long limit and at least one in angle are greater than described the first magnet and described second and grow interval between limit and at least one in angle; And
Second area, the wherein described longitudinal direction from another end of described magnet to described the first magnet, the described interval between described the first magnet and the described first long limit and at least one in described angle are less than described the first magnet and described second and grow described interval between limit and at least one in described angle.
5. magnet unit according to claim 4, wherein said first area and described second area are set to have from described the first minor face and described the second minor face and the described first long limit and the described second long limit 1/8 to 1/2 the length to the described longitudinal direction of described the first magnet unit of part connected to one another respectively.
6. magnet unit according to claim 5, the described interval between wherein said the first magnet and the described long limit of described the second magnet is at least 12 millimeters in the region with large-spacing, and is 9 millimeters to 11 millimeters having in closely-spaced region.
7. magnet unit according to claim 5, wherein said angle is 28 ° in the region with wide-angle, and is 25 ° to 27 ° having in low-angle region.
8. a sputtering equipment, is characterized in that comprising:
Penstock, has cylinder form and rotatable;
Magnet unit, is arranged on described penstock inside;
Cylindrical target, is arranged on described penstock outside; And
Substrate support, and support substrates relative with described target,
Wherein said magnet unit comprises clip, through arranging to there is the first magnet of rectilinear form on described clip and being arranged on described clip with the second magnet around described the first magnet, and
Interval between wherein said the first magnet and described the second magnet is different at least two regions with at least one in angle.
9. sputtering equipment according to claim 8, comprising:
First area, the wherein described longitudinal direction from an end of described magnet to described the first magnet, the interval between described the first magnet and the described first long limit and at least one in angle are greater than described the first magnet and described second and grow interval between limit and at least one in angle; And
Second area, the wherein described longitudinal direction from another end of described magnet to described the first magnet, the described interval between described the first magnet and the described first long limit and at least one in described angle are less than described the first magnet and described second and grow described interval between limit and at least one in described angle.
10. sputtering equipment according to claim 9, wherein said first area and described second area are set to have from described the first minor face and described the second minor face and the described first long limit and the described second long limit 1/8 to 1/2 the length to the described longitudinal direction of described the first magnet unit of part connected to one another respectively.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20130044776A KR20140126520A (en) | 2013-04-23 | 2013-04-23 | Magnet unit and sputtering apparatus having the same |
| KR10-2013-0044776 | 2013-04-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104120392A true CN104120392A (en) | 2014-10-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410143705.9A Pending CN104120392A (en) | 2013-04-23 | 2014-04-10 | Magnet unit and sputtering apparatus having the same |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20140126520A (en) |
| CN (1) | CN104120392A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7140801B2 (en) * | 2020-07-29 | 2022-09-21 | キヤノントッキ株式会社 | Film forming apparatus and electronic device manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1196169C (en) * | 1998-04-16 | 2005-04-06 | 贝克尔特Vds股份有限公司 | Means for controlling target erosion and sputtering in magnetron |
| KR20050076095A (en) * | 2004-01-19 | 2005-07-26 | 주식회사 유니벡 | A target device |
| CN101589170A (en) * | 2006-11-17 | 2009-11-25 | 株式会社爱发科 | Magnetron sputter electrode, and sputtering device having the magnetron sputter electrode |
| WO2013001715A1 (en) * | 2011-06-30 | 2013-01-03 | キヤノンアネルバ株式会社 | Sputtering device |
-
2013
- 2013-04-23 KR KR20130044776A patent/KR20140126520A/en not_active Application Discontinuation
-
2014
- 2014-04-10 CN CN201410143705.9A patent/CN104120392A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1196169C (en) * | 1998-04-16 | 2005-04-06 | 贝克尔特Vds股份有限公司 | Means for controlling target erosion and sputtering in magnetron |
| KR20050076095A (en) * | 2004-01-19 | 2005-07-26 | 주식회사 유니벡 | A target device |
| CN101589170A (en) * | 2006-11-17 | 2009-11-25 | 株式会社爱发科 | Magnetron sputter electrode, and sputtering device having the magnetron sputter electrode |
| WO2013001715A1 (en) * | 2011-06-30 | 2013-01-03 | キヤノンアネルバ株式会社 | Sputtering device |
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| Publication number | Publication date |
|---|---|
| KR20140126520A (en) | 2014-10-31 |
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Application publication date: 20141029 |