CN101220460A - Target device for sputtering - Google Patents
Target device for sputtering Download PDFInfo
- Publication number
- CN101220460A CN101220460A CNA2008100000468A CN200810000046A CN101220460A CN 101220460 A CN101220460 A CN 101220460A CN A2008100000468 A CNA2008100000468 A CN A2008100000468A CN 200810000046 A CN200810000046 A CN 200810000046A CN 101220460 A CN101220460 A CN 101220460A
- Authority
- CN
- China
- Prior art keywords
- target
- benchmark
- backboard
- sputtering
- ledge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The invention relates to a sputtering target device disposed in a width direction relative to the moving direction of a large-area object, wherein the sputtering target device comprises: a backboard comprising a center surface and at least one step surface at both sides of the center surface to reduce a defined grading; a reference target material installed at the center surface of the backboard; and a reinforcing target material installed at the step surfaces of the backboard.
Description
Technical field
Employed sputtering target when the present invention relates to make film relates more specifically to a kind of backboard that is installed on and can be easy to afterwards use, repair and the management sputtering target.
Background technology
As transparent film, use ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), ITZO etc.Because these films have the feature of high conductivity and high-transmission rate, and are easy to carry out microfabrication, so be used for the show electrode of liquid-crystal display (LCD), plasma display flat-panel monitor (FPD) usefulness such as (PDP) at present.
The manufacture method of ito thin film is divided into chemical membrane method and physical film deposition methods such as electron beam evaporation plating method, sputtering method such as spray heating decomposition, CVD method.Wherein, owing to used the sputtering method of ITO target to be easy to big areaization, the resistance value of the film that obtains and the variation of transmissivity are little, and are easy to adjust filming condition, so adopt in most of ITO film formation process.In recent years, along with the maximization of display panel, the size of making the employed glass substrate of panel also maximizes day by day.When therefore, making film employed target also cooperating substrate size and towards large scale development.
Corresponding with display panel towards large scale development, also be useful in the multi-region sputter of disposing a plurality of targets on the backboard for target, also have at the behind of target distributed magnet the magnetron sputtering that entire target is carried out sputter by the magnet that moves configuration.
But this magnetic control sputtering device can appear at privileged site and produce the phenomenon that target corrodes (erosion) rapidly.If this erosion arrives the bonding coat between target and the backboard, even then at the also a large amount of residual targets that have of other parts, the whole out of use situation of the target of sputter can appear also being used for.
In order to address the above problem, patent documentation 1 has proposed use multi-region target, but thickening forms the content that corrodes multiple part.Yet, because target surperficial inhomogeneous, thereby the problem of the quality decline that sputter causes can take place.
In addition, patent documentation 2 discloses use multi-region target, but forms target by different materials, desires to make the differential erosion uniform technology that becomes.Yet, because the composition of target is different, the problem of the uniform sputter of quality also can appear being difficult to expect in this case.
Patent documentation 1: the spy opens the 2000-204468 communique
Patent documentation 2: the spy opens the 1999-117063 communique
Summary of the invention
The present invention proposes for addressing the above problem, and purpose is to provide a kind of sputtering target device, is used for the such big area of display panel is carried out the uniform sputter of quality.
In addition, the object of the present invention is to provide a kind of sputtering target device, corresponding to the inhomogeneous erosion of target, can realize the life-time service of target, and can be easy to change target.
According to an exemplary embodiment of the present invention, target device for sputtering comprises backboard and the discrepant benchmark target of thickness and strengthens target.Backboard comprises central surface (central surface) and at least one ledge surface (step surface) that forms at the periphery of central surface.The benchmark target is installed on the central surface, strengthens target and is installed on the ledge surface of the both sides that are positioned at the benchmark target.
Among the present invention, ledge surface is lower than the differential of regulation than central surface and forms, and compares the benchmark target and further thickeies formation reinforcement target, so that the difference of altitude between compensation central surface and the ledge surface.Backboard is that the center is left-right symmetry and forms with the central surface, forms one or more ledge surface from central surface.In addition, preferably then ledge surface is low more away from central surface more, but also can according to circumstances increase and decrease the height of ledge surface.
The target of magnetron sputtering corrodes the influence that is subjected to various factors.Particularly, because moving of the magnet that moves at the back side of backboard corroded figure and is subjected to very big influence.But, when large-area display unit etc. is carried out sputter, compare the central authorities of display panel, relative big erosion can appear in the zone corresponding with the end.
Therefore, the present invention installs thicker reinforcement target corresponding to this erosion performance in the both sides of central surface, is installed on the relatively low ledge surface of backboard strengthening target, thereby prevents to strengthen the outstanding of target.By preventing to strengthen the outstanding relatively of target, the target that can prevent adjacency hinders advancing of the film particle that penetrates from target.
According to other exemplary embodiments of the present invention, target device for sputtering comprises: the backboard that contains central surface, the 1st ledge surface and the 2nd ledge surface; Be installed in the benchmark target on the central surface; Be installed in the 1st on the 1st ledge surface and strengthen target; Be installed in the 2nd on the 2nd ledge surface and strengthen target.
On backboard, central surface is the highest relatively, and the 1st ledge surface and the 2nd ledge surface reduce successively and form.For example, when forming ito thin film, target uses the ITO target that contains indium, pillar, oxygen, and the target more than at least three kinds is provided, and is installed in respectively on central surface and the 1st ledge surface and the 2nd ledge surface.Between target each is differential to be preferably in the 1mm.When poor more than the 1mm appears in differential between target, then be difficult to form uniform film, probably can be because dross cause the downgrade of film.Therefore, according to described method, benchmark target, the 1st is strengthened target and the 2nd and is strengthened the same in fact plane of formation, surface that target exposes, and can form uniform film on large-area display surface.
Sputtering target device of the present invention can carry out the uniform sputter of quality to the such big area of display panel, and can increase the service efficiency of target integral body.
In addition, with regard to this target assembly, can prolong the duration of service of the target after target is installed, can optionally change the benchmark target and strengthen target, thereby can save the required expense of target of changing.
Description of drawings
Fig. 1 is the stereographic map of the sputtering target device of expression an embodiment of the invention;
Fig. 2 is the sectional view of the sputtering target device of Fig. 1;
Fig. 3 is the sectional view of the erosion profile of expression when using the target assembly of Fig. 2;
Fig. 4 is the sectional view that is used to illustrate the sputtering target device of another embodiment of the present invention;
Fig. 5 is the sectional view that is used to illustrate the sputtering target device of another embodiment of the invention.
The explanation of symbol
110: backboard
112: central surface
114: ledge surface
120: the benchmark target
130: strengthen target
132: middle target
Embodiment
With reference to the accompanying drawings, the backboard unit to exemplified embodiment of the present invention describes.Identical reference marks refers to the identical key element of essence in this explanation, for your guidance.According to mentioned above principle, the content that both can quote other accompanying drawing records describes, and also can omit to be judged as to it will be apparent to those skilled in the art that or repeated content.
Fig. 1 is the stereographic map of the sputtering target device of expression an embodiment of the invention, and Fig. 2 is the sectional view of the sputtering target device of Fig. 1.
See figures.1.and.2, the sputtering target device comprises backboard 110, benchmark target 120 and strengthens target 130.In the present embodiment, target assembly is used to form the film that is made of Si, Ta, Al, ZnO and ITO etc., and benchmark target 120 and reinforcement target 130 are formed by suitable material.
Target assembly of the present invention is used to carry out magnetron sputtering.Backboard 110 comprises central surface 112 and the ledge surface 114 that forms in its both sides.The reinforcement target 130 of comparing the 120 thickening formation of benchmark target is attached on the ledge surface 114.This is for to sputter process large-area when surface, the consideration of the profile that is produced by the surperficial inhomogeneous erosion of target.Therefore, compare benchmark target 120 thickenings formation reinforcement target 130,, make the height of ledge surface 114 be lower than central surface 112 in order to prevent to strengthen the surface that target 130 outstanding height are higher than benchmark target 120.
In the present embodiment, when reference for installation target 120 is with reinforcement target 130 on target assembly, make the surface of the target that externally exposes be positioned at roughly same plane.Like this, can not hinder advancing of the particle that penetrates from target, can not produce particulate etc., thereby can get rid of the factor that reduces the substrate quality.
In the sputtering target device, the display panel of preferred reference target 120 and reinforcement target 130 is greater than display base plate.Therefore, in the present embodiment, need make with benchmark target 120 and the total length of target of strengthening target 130 definition to a certain extent greater than the size of substrate.For example, the total length of target is formed greater than the about 200～300mm of the width of substrate.
In moulding and agglomerating process, carry out the benchmark target 120 that constitutes by ITO and strengthen forming of target 130.When using ito powder,, formability variation, rate of profit can occur and extremely descend degradation, thereby may cause the manufacturing cost rising of target and the consequence that productivity descends along with the increase of substrate size.But, in the present embodiment,, therefore can address the above problem owing to adopt the multi-region target used a plurality of targets, do not have to process burdens such as target, thereby can reduce manufacturing cost and boost productivity by tilted shape.
Following the carrying out of bonding process that will engage with backboard 110 as the target of the sintered compact of ITO, promptly more than the fusing point that target and backboard 110 is heated to scolder after, use scolder to engage and cool off.In this process of cooling, because bending or disruptive problem probably can appear in the difference of the coefficient of thermal expansion of sintered compact and backboard, but this also can solve by using the multi-region target.
Promptly, ledge surface 114 is compared central surface 112 and is formed to be lower than the differential of regulation, in order to compensate the difference of height between central surface 112 and the ledge surface 114, compare benchmark target 120 thickening and form and strengthen targets 130, thereby benchmark target 120 and reinforcement target 130 is surperficial consistent when mounted.
Usually, backboard 110 is that the center is left-right symmetry with central surface 112, and the benchmark target 120 of installation and reinforcement target 130 also are left-right symmetry.But,,, also have target to be designed to asymmetrical situation for being fit to device characteristics and service performance because the deposition of target changes according to the various parameters such as subsidiary material of coating equipment, equipment.
In the magnetron sputtering, moving of the magnet 10 that moves at the back side of backboard 110 is very big to the target corrosive effect.When big area display unit etc. is carried out sputter, compare the central authorities of display panel, with corresponding zone, end in relative big erosive situation to occur more.Therefore, compare central authorities, strengthen target 130 and be positioned at and the both ends adjoining position.
Fig. 3 is the sectional view of the erosion profile of expression when using the target assembly of Fig. 2.
With reference to Fig. 3, can learn the shape of target profile by the cross section of benchmark target 120 and reinforcement target 130.As mentioned above, compare central authorities, the inboard that target corrodes in both ends is more active.But, according to present embodiment, because thickening has formed reinforcement target 130 relatively, so the advantage that also is difficult to expose easily the bottom takes place to corrode rapidly even have.
But as shown in Figure 3, before central surface 112 and ledge surface 114 exposed, because benchmark target 120 and strengthen the erosion of target 130, the border of central surface 112 and ledge surface 114 can be exposed.
That is, in order to increase the service efficiency of benchmark target 120, the rapid erosion of strengthening target 130 can become its obstacle, even the backboard of double-layer structure 110 also can expose the bottom and unfavorable condition occur.In engineering, preferably before all targets consume, the bottom of backboard is exposed, proposed to use a plurality of different schemes of strengthening target for this reason.
Fig. 4 is the sectional view that is used to illustrate the sputtering target device of another embodiment of the present invention.
With reference to Fig. 4, target device for sputtering comprises backboard 210, benchmark target 120, reinforcement target 130 and the middle target 132 with three-decker.Benchmark target 120, reinforcement target 130 and middle target 132 are formed by the material that Si, Ta, Al, ZnO and ITO etc. are suitable for film.
With reference to skeletal lines shown in dotted lines in Figure 4, even the erosion identical with Fig. 3 takes place as can be known, the bottom of backboard 210 can not exposed yet.That is,,, can prevent that also the bottom at target both ends from firstly appearing out from, compare situation shown in Figure 3, have the advantage of the service efficiency that can improve target even existing erosion takes place according to present embodiment.
That is, compare benchmark target 120 thickenings formation reinforcement target 130, suitably configuration has the middle target 132 of interior thickness between benchmark target 120 and reinforcement target 130, thereby can further improve the service efficiency of target.
In addition, identical by making benchmark target 120, middle target 132 with the initial surface of strengthening target 130, can form uniform film.Therefore, can not hinder advancing of the particle that penetrates from target, can not produce particulate etc., thereby can get rid of the factor that reduces the substrate quality.
The 1st ledge surface 214 forms to be lower than the differential of regulation than central surface 212, and the 2nd ledge surface 216 forms to be lower than the differential of regulation than the 1st ledge surface 214 again.In addition, the 1st ledge surface 214 and the 2nd ledge surface 216 are that the center is left-right symmetry with central surface 212, and the benchmark target 120 of installation and reinforcement target 130 also are left-right symmetry.But,,, also have target to be designed to asymmetrical situation for adapting to device characteristics and service performance because the erosion of target changes according to the various parameters such as subsidiary material of coating equipment, equipment.
By target 132 in the middle of further comprising and the 1st ledge surface 214, can increase the service efficiency of benchmark target 120 and reinforcement target 130, and the backboard 210 by forming by the structure more than three layers, can more effectively tackle exposing of bottom.
Fig. 5 is the sectional view that is used to illustrate the sputtering target device of another embodiment of the invention.
With reference to Fig. 5, the erosion of the middle portion in reply Fig. 2 structure is compared the middle target 122 that 120 thickenings of benchmark target form in the configuration of the both sides of central surface.This is the consideration that improves the structure of Fig. 2 for being.Thus, what can solve the problem that expose rapidly on the border of central surface and ledge surface.In addition, can also increase the service efficiency of benchmark target 120, prevent to strengthen the completely consumed of target 130.
Fig. 6 is used to illustrate and the similar sectional view of the sputtering target device of other embodiments of the present invention of the sputtering target device of Fig. 4.
With reference to Fig. 6 (a), target device for sputtering comprises backboard 210, benchmark target 120a, reinforcement target 130a and the middle target 132a with three-decker.
Benchmark target 120a, reinforcement target 130a and middle target 132a are formed by the material that Si, Ta, Al, ZnO and ITO etc. are suitable for film, and the upper surface that exposes in the above roughly is same plane.Differential maintaining in the 1mm between particularly adjacent benchmark target 120a and the middle target 132a, adjacent middle target 132a and strengthen differential between the target 130a and also maintain in the 1mm.With the upper surface that exposes is benchmark, and the level configurations of the upper surface of benchmark target 120a, reinforcement target 130a and middle target 132a is for increasing gradually.
With reference to Fig. 6 (b), target device for sputtering comprises backboard 210, benchmark target 120b, reinforcement target 130b and the middle target 132b with three-decker equally.
With reference to Fig. 6 (c), target device for sputtering comprises backboard 210, benchmark target 120c, reinforcement target 130c and the middle target 132c with three-decker equally.
The initial surface that makes benchmark target, middle target and strengthen target maintain 1mm with interior keep roughly the same, thereby can form uniform film.Therefore, can not hinder advancing of the particle that penetrates from target, can not produce particulate etc., thereby can get rid of the factor that reduces the substrate quality.
As mentioned above, be illustrated with reference to preferred implementation of the present invention, be appreciated that for those skilled in the art, in the scope that does not break away from the thought of the present invention that is recorded in the claim scope and field, can carry out multiple modifications and changes the present invention.That is, technical scope of the present invention is not limited to the preferred implementation that is used to carry out an invention based on the scope of claim and decide.
Claims (8)
1. target device for sputtering, the direct of travel of big area object and being configured on the width is characterized in that relatively, comprising:
Backboard, at least one ledge surface that contains central surface and form to reduce the differential of regulation in the both sides of described central surface;
The benchmark target is installed on the central surface of described backboard; With
Strengthen target, be installed on the ledge surface of described backboard.
2. target device for sputtering according to claim 1 is characterized in that,
Described benchmark target and described reinforcement target are formed by identical material, are that the center is left and right symmetrically and installs with the central authorities of described backboard.
3. target device for sputtering according to claim 1 is characterized in that,
Described benchmark target and described reinforcement target are formed width W separately by identical material
nBe at least 5mm.
4. target device for sputtering according to claim 1 is characterized in that,
The surface that described benchmark target and described reinforcement target expose forms same in fact plane.
5. target device for sputtering according to claim 4 is characterized in that,
Among the surface that described benchmark target and described reinforcement target expose, differential the maintaining in the 1mm between adjacently situated surfaces.
6. target device for sputtering according to claim 1 is characterized in that,
Be formed with a plurality of ledge surfaces from the both sides of the described central surface of described backboard, described ledge surface forms with mutually different height.
7. target device for sputtering, the direct of travel of big area object and being configured on the width is characterized in that relatively,
Comprise: backboard, contain central surface, be lower than described central surface in the both sides of described central surface and the 1st ledge surface that forms and be lower than described the 1st ledge surface at the two ends of described the 1st ledge surface and the 2nd ledge surface that forms; The benchmark target is installed on the described central surface; The 1st strengthens target, is installed on described the 1st ledge surface; With the 2nd reinforcement target, be installed on described the 2nd ledge surface,
Described benchmark target, the described the 1st is strengthened target and the described the 2nd and is strengthened the same in fact plane of formation, surface that target exposes.
8. target device for sputtering according to claim 7 is characterized in that,
In the differential 1mm of maintaining between the surface that described the 1st reinforcement target and the 2nd reinforcement target expose.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070001464A KR101171769B1 (en) | 2007-01-05 | 2007-01-05 | Target device for sputtering |
| KR10-2007-0001464 | 2007-01-05 | ||
| KR1020070001464 | 2007-01-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101220460A true CN101220460A (en) | 2008-07-16 |
| CN101220460B CN101220460B (en) | 2012-03-21 |
Family
ID=39630526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100000468A Expired - Fee Related CN101220460B (en) | 2007-01-05 | 2008-01-04 | Target device for sputtering |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5334032B2 (en) |
| KR (1) | KR101171769B1 (en) |
| CN (1) | CN101220460B (en) |
| TW (1) | TWI418645B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102251221A (en) * | 2010-05-17 | 2011-11-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Target and semiconductor device processing apparatus using same |
| CN102906301A (en) * | 2010-11-19 | 2013-01-30 | 吉坤日矿日石金属株式会社 | Ito sputtering target |
| WO2013075317A1 (en) * | 2011-11-21 | 2013-05-30 | 深圳市华星光电技术有限公司 | Sputtering target material construction of transparent conductive layer |
| CN108690964A (en) * | 2017-03-29 | 2018-10-23 | 住友化学株式会社 | Sputtering target |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI544099B (en) | 2010-05-21 | 2016-08-01 | 烏明克公司 | Non-continuous bonding of sputtering target to backing material |
| US20130126343A1 (en) * | 2011-11-21 | 2013-05-23 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Sputter target structure of transparent conductive layer |
| AT14346U1 (en) * | 2014-07-08 | 2015-09-15 | Plansee Se | Target and method of making a target |
| KR20160123463A (en) | 2015-04-15 | 2016-10-26 | (주)태광테크 | Target for sputtering and its fabrication method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03287763A (en) * | 1990-04-04 | 1991-12-18 | Sumitomo Metal Ind Ltd | Target for magnetron sputtering |
| CN2104222U (en) * | 1991-07-04 | 1992-05-13 | 北京钢铁学院分院 | Cold cathode arc light ion plating step type target |
| JPH0953174A (en) * | 1995-08-18 | 1997-02-25 | Chodendo Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai | Sputtering target |
| JP3760652B2 (en) * | 1999-01-08 | 2006-03-29 | 東ソー株式会社 | Multi-split sputtering target |
| JP2006233243A (en) * | 2005-02-22 | 2006-09-07 | Shin Meiwa Ind Co Ltd | Target supporting structure for film deposition apparatus |
| CN2828061Y (en) * | 2005-07-15 | 2006-10-18 | 中国人民解放军国防科学技术大学 | Target material structure of magnetic sputtering ferromagnetic material |
-
2007
- 2007-01-05 KR KR1020070001464A patent/KR101171769B1/en not_active IP Right Cessation
-
2008
- 2008-01-04 CN CN2008100000468A patent/CN101220460B/en not_active Expired - Fee Related
- 2008-01-04 TW TW097100417A patent/TWI418645B/en not_active IP Right Cessation
- 2008-01-07 JP JP2008000679A patent/JP5334032B2/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102251221A (en) * | 2010-05-17 | 2011-11-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Target and semiconductor device processing apparatus using same |
| CN102906301A (en) * | 2010-11-19 | 2013-01-30 | 吉坤日矿日石金属株式会社 | Ito sputtering target |
| CN102906301B (en) * | 2010-11-19 | 2014-11-26 | 吉坤日矿日石金属株式会社 | Ito sputtering target |
| WO2013075317A1 (en) * | 2011-11-21 | 2013-05-30 | 深圳市华星光电技术有限公司 | Sputtering target material construction of transparent conductive layer |
| CN108690964A (en) * | 2017-03-29 | 2018-10-23 | 住友化学株式会社 | Sputtering target |
| CN108690964B (en) * | 2017-03-29 | 2021-02-09 | 住友化学株式会社 | Sputtering target |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008169482A (en) | 2008-07-24 |
| TW200833857A (en) | 2008-08-16 |
| TWI418645B (en) | 2013-12-11 |
| CN101220460B (en) | 2012-03-21 |
| KR101171769B1 (en) | 2012-08-07 |
| JP5334032B2 (en) | 2013-11-06 |
| KR20080064489A (en) | 2008-07-09 |
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