CN2104222U - Cold cathode arc light ion plating step type target - Google Patents
Cold cathode arc light ion plating step type target Download PDFInfo
- Publication number
- CN2104222U CN2104222U CN 91217203 CN91217203U CN2104222U CN 2104222 U CN2104222 U CN 2104222U CN 91217203 CN91217203 CN 91217203 CN 91217203 U CN91217203 U CN 91217203U CN 2104222 U CN2104222 U CN 2104222U
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- China
- Prior art keywords
- target
- step type
- cold cathode
- ion plating
- arc
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The utility model relates to a cold cathode arc light ion plating step type target, which belongs to a metal coating device. The target is characterized in that a cylindrical flat target is manufactured into a step target surface with a plurality of steps, which is formed by that the target surface orderly decreases a step along a warp direction from an outer margin to an inner center. Thus, the arc speckles are effectively limited on each step, and therefore, the arc speckles are uniformly distributed on the whole target surface. Thus, the ejection with big liquid drops can be effectively reduced, the quality of film formation and the utilization of target materials can be raised, and the expense is saved.
Description
The utility model relates to the plating equipment of metallic substance.
In the vacuum ionic coating apparatus, extensively adopt cylinder flush type target at present, as U.S. Pat 3625848; US3836451, because the arc class that moves on this target surface is bigger at the probability that the zone near outer rim occurs, make arc current concentrate on this zone, cause this zone current density bigger, therefore form big droplet jet, the outer rim of target is ablated seriously, both influenced coating quality, make target utilization low again, cause waste.
The utility model provides a kind of back ground current density that reduces for avoiding above-mentioned weak point of the prior art, thereby can improve quality of forming film, and can increase the step type target of the utilization ratio of target.
The purpose of this utility model can reach by following measure: the plane of cylindrical target is processed into radially, is reduced a step successively by the inside center of outer rim and form a plurality of stagewise step type targets.This step type target can effectively be cut apart the arc class of motion, constrains in each floor ring district, form a plurality of arc rings, make it, greatly reduce current density having under the same current density situation with planar target, make the refinement of arc class, thereby reduced big droplet jet, improved quality of forming film, and because arc class is tending towards even more in whole target surface distribution, several arc class ablates simultaneously, has improved the homogeneity that whole target surface is ablated, and improves the utilization ratio of target, reduce and change the target number of times, saved spending greatly.
The utility model is described in further detail below in conjunction with drawings and Examples:
Fig. 1 is a structural representation of the present utility model.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is the step type target sectional view after evenly ablating.
Fig. 4 is the sectional view after the non-homogeneous ablation of planar target.
Accompanying drawing 1,2 has provided the synoptic diagram of step type target, as seen from the figure, the plane of this cylindrical target (1) for radially, reduce a step (2) successively by the inside center of outer rim and form a plurality of stagewise step type targets.Accompanying drawing 3 has provided the sectional view after the even ablation of step type target, and as seen from the figure, the disposable ablation of target must not reprocess, so target utilization is higher.Accompanying drawing 4 has provided the sectional view after the non-homogeneous ablation of planar target, and as seen from the figure, outer rim is ablated serious; both influenced coating quality, and need often change target again, because after burning to a certain degree; must be reprocessed into the plane could use, and target utilization is reduced, and causes waste.
The utlity model has following advantage:
1. reduce back ground current density, thereby improved quality of forming film.
2. improve the uniformity that whole target surface is ablated, thereby increased the utilization rate of target, saved spending.
Claims (1)
1, a kind of cold cathode arc ion plating step type target of metallic substance plating equipment, be shaped as the cylindrical plane target, it is characterized in that the plane of cylindrical target (1) is processed into along warp-wise, is reduced a step (2) successively by the inside center of outer rim, form a plurality of stagewise step type targets.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 91217203 CN2104222U (en) | 1991-07-04 | 1991-07-04 | Cold cathode arc light ion plating step type target |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 91217203 CN2104222U (en) | 1991-07-04 | 1991-07-04 | Cold cathode arc light ion plating step type target |
Publications (1)
Publication Number | Publication Date |
---|---|
CN2104222U true CN2104222U (en) | 1992-05-13 |
Family
ID=4924921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 91217203 Granted CN2104222U (en) | 1991-07-04 | 1991-07-04 | Cold cathode arc light ion plating step type target |
Country Status (1)
Country | Link |
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CN (1) | CN2104222U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101220460B (en) * | 2007-01-05 | 2012-03-21 | 三星康宁精密素材株式会社 | Target device for sputtering |
CN111681782A (en) * | 2020-06-18 | 2020-09-18 | 中国工程物理研究院激光聚变研究中心 | Method for manufacturing impedance matching target |
-
1991
- 1991-07-04 CN CN 91217203 patent/CN2104222U/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101220460B (en) * | 2007-01-05 | 2012-03-21 | 三星康宁精密素材株式会社 | Target device for sputtering |
CN111681782A (en) * | 2020-06-18 | 2020-09-18 | 中国工程物理研究院激光聚变研究中心 | Method for manufacturing impedance matching target |
CN111681782B (en) * | 2020-06-18 | 2022-06-07 | 中国工程物理研究院激光聚变研究中心 | Method for manufacturing impedance matching target |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CX01 | Expiry of patent term |