CN114481038B - Evaporation crucible and evaporation system - Google Patents

Evaporation crucible and evaporation system Download PDF

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Publication number
CN114481038B
CN114481038B CN202210168538.8A CN202210168538A CN114481038B CN 114481038 B CN114481038 B CN 114481038B CN 202210168538 A CN202210168538 A CN 202210168538A CN 114481038 B CN114481038 B CN 114481038B
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China
Prior art keywords
bottom wall
opening
mesh
fold line
line portion
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CN202210168538.8A
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Chinese (zh)
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CN114481038A (en
Inventor
星光
杨增乾
黄正峰
孙福坤
彭俊林
李震芳
宋星星
冯耀耀
金童燮
张志华
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to CN202210168538.8A priority Critical patent/CN114481038B/en
Publication of CN114481038A publication Critical patent/CN114481038A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An evaporation crucible and an evaporation system. The evaporation crucible comprises: the crucible body comprises a containing cavity with an opening, wherein the containing cavity is formed by the bottom wall and the side wall; the screen plate assembly is arranged in the accommodating cavity and comprises a first screen plate and a second screen plate, an avoidance gap is formed between the first screen plate and the second screen plate, and at least one first mesh is arranged on the first screen plate; the second screen plate comprises an opening part, at least one second mesh is arranged on the opening part, the cross section of the opening part comprises at least one opening unit which is opened towards the bottom wall or is deviated from the bottom wall on a plane perpendicular to the bottom wall, and the opening unit is V-shaped or trapezoid; the nozzle is arranged at the opening of the accommodating cavity and is provided with an air spraying hole. In the embodiment of the disclosure, by adding the net plates with trapezoid or V-shaped openings, the air flow generates a similar vortex effect through the air hole channels between the two layers of net plates, so that splashing is reduced, and bad dark spots, damage to a mask plate and the like are avoided.

Description

Evaporation crucible and evaporation system
Technical Field
Embodiments of the present disclosure relate to, but are not limited to, display technology, and more particularly to an evaporation crucible and an evaporation system.
Background
Organic Light-Emitting Diode (OLED) is a display lighting technology that has been developed in recent years, and in particular, in the display industry, OLED display has been considered to have a wide application prospect due to advantages of high response, high contrast, flexibility, and the like.
The OLED device can be formed on the substrate by adopting an evaporation process, wherein the evaporation refers to heating the crucible under a certain vacuum condition, so that the evaporation material in the crucible is melted (or sublimated) into vapor composed of atoms, molecules or atomic groups, and finally the vapor is deposited on the surface of the substrate through the nozzle to form a film, thereby forming the functional layer of the OLED device.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
Embodiments of the present disclosure provide an evaporation crucible and an evaporation system that reduce sputtering.
In one aspect, embodiments of the present disclosure provide an evaporation crucible, comprising:
the crucible comprises a crucible body, wherein the crucible body comprises a bottom wall and a side wall arranged around the bottom wall, and the bottom wall and the side wall enclose a containing cavity with an opening for containing evaporation materials;
the screen plate assembly is arranged in the accommodating cavity and comprises a first screen plate and a second screen plate arranged on one side, far away from the bottom wall, of the first screen plate, an avoidance gap is formed between the first screen plate and the second screen plate, and at least one first mesh hole for the vapor deposition material to pass through is formed in the first screen plate; the second screen plate comprises an opening part, at least one second mesh hole for the vapor deposition material to pass through is arranged in the opening part, the cross section of the opening part comprises at least one opening unit on a plane perpendicular to the bottom wall, the opening of the opening unit faces the bottom wall or faces away from the bottom wall, and the opening unit is V-shaped or trapezoid;
the nozzle is arranged at the opening of the accommodating cavity and is provided with an air spraying hole.
In an exemplary embodiment, the cross section of the opening part includes two opening units having the same opening direction on a plane perpendicular to the bottom wall, the two opening units being located on both sides of the central axis of the gas injection hole, respectively.
In an exemplary embodiment, the opening unit includes a first fold line portion and a second fold line portion on a plane perpendicular to the bottom wall, or includes a first fold line portion, a connection portion, and a second fold line portion connected in sequence, and an included angle between the first fold line portion, the second fold line portion, and the bottom wall is 45 degrees to 60 degrees.
In an exemplary embodiment, the cross section of the opening part includes one of the opening units on a plane perpendicular to the bottom wall, and the opening unit includes a first folding line part and a second folding line part, or includes the first folding line part, the connecting part, and the second folding line part connected in sequence, the first folding line part and the second folding line part being respectively located at both sides of the central axis of the gas injection hole.
In an exemplary embodiment, the first angle between the first fold line portion and the bottom wall is the same as the second angle between the second fold line portion and the bottom wall.
In an exemplary embodiment, the second screen further includes a flat plate portion connected to the opening portion or having a common component with the opening portion, the flat plate portion having no mesh, and an orthographic projection of the gas ejection holes is located within an orthographic projection of the flat plate portion on a plane parallel to the bottom wall.
In an exemplary embodiment, the orthographic projection of the nozzle is located within the orthographic projection of the flat plate portion on a plane parallel to the bottom wall.
In an exemplary embodiment, the first mesh plate is parallel to the bottom wall, and the flat plate portion is parallel to the bottom wall.
In an exemplary embodiment, the shortest distance between the second mesh plate and the first mesh plate along the direction perpendicular to the bottom wall is 1cm to 2cm.
In an exemplary embodiment, the shortest distance between the second screen and the nozzle along the direction perpendicular to the bottom wall is 0.5 cm to 1cm.
In an exemplary embodiment, the second mesh has a smaller pore size than the first mesh.
On the other hand, the embodiment of the disclosure provides an evaporation system, which comprises the evaporation crucible according to any one of the embodiments.
The embodiment of the disclosure comprises an evaporation crucible and an evaporation system, wherein the evaporation crucible comprises: the crucible comprises a crucible body, wherein the crucible body comprises a bottom wall and a side wall arranged around the bottom wall, and the bottom wall and the side wall enclose a containing cavity with an opening for containing evaporation materials; the screen plate assembly is arranged in the accommodating cavity and comprises a first screen plate and a second screen plate arranged on one side, far away from the bottom wall, of the first screen plate, an avoidance gap is formed between the first screen plate and the second screen plate, and at least one first mesh hole for the vapor deposition material to pass through is formed in the first screen plate; the second screen plate comprises an opening part, at least one second mesh hole for the vapor deposition material to pass through is arranged in the opening part, the cross section of the opening part comprises at least one opening unit on a plane perpendicular to the bottom wall, the opening of the opening unit faces the bottom wall or faces away from the bottom wall, and the opening unit is V-shaped or trapezoid; the nozzle is arranged at the opening of the accommodating cavity and is provided with an air spraying hole. In the embodiment of the disclosure, by adding the net plates with trapezoid or V-shaped openings, the air flow generates a similar vortex effect through the air hole channels between the two layers of net plates, so that splashing is reduced, and bad dark spots, damage to a mask plate and the like are avoided.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and drawings.
Other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description.
Drawings
The accompanying drawings are included to provide a further understanding of the technical aspects of the present disclosure, and are incorporated in and constitute a part of this specification, illustrate the technical aspects of the present disclosure and together with the embodiments of the disclosure, and not constitute a limitation of the technical aspects.
FIG. 1 is a schematic view of an evaporation crucible according to one embodiment;
FIG. 2 is a schematic view of the vapor deposition crucible of FIG. 1;
FIG. 3 is a schematic view of an evaporation crucible provided in an exemplary embodiment;
FIG. 4 is a schematic view of an evaporation crucible provided in another exemplary embodiment;
FIG. 5 is a schematic view of an evaporation crucible provided in yet another exemplary embodiment;
FIG. 6 is a schematic view of an evaporation crucible provided in yet another exemplary embodiment;
FIG. 7 is a schematic view of an evaporation crucible provided in yet another exemplary embodiment;
fig. 8 is a schematic vapor deposition view of the vapor deposition crucible shown in fig. 3.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The embodiments of the present disclosure and features in the embodiments may be arbitrarily combined with each other without collision.
Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs.
In the drawings, the size of each constituent element, the thickness of a layer, or a region may be exaggerated for clarity. Accordingly, embodiments of the present disclosure are not necessarily limited to this size, and the shapes and sizes of the various components in the drawings do not reflect actual proportions. Furthermore, the drawings schematically show ideal examples, and the embodiments of the present disclosure are not limited to the shapes or the numerical values shown in the drawings.
The ordinal numbers of "first", "second", "third", etc. in the present disclosure are provided to avoid intermixing of constituent elements, and do not denote any order, quantity, or importance.
In the present disclosure, for convenience, terms such as "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like are used to describe positional relationships of the constituent elements with reference to the drawings, only for convenience in describing the present specification and simplifying the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present disclosure. The positional relationship of the constituent elements is appropriately changed according to the direction in which the respective constituent elements are described. Therefore, the present invention is not limited to the words described in the disclosure, and may be replaced as appropriate.
In this disclosure, the terms "mounted," "connected," and "connected" are to be construed broadly, unless otherwise specifically indicated and defined. For example, it may be a fixed connection, a removable connection, or an integral connection; may be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intermediate members, or may be in communication with the interior of two elements. The specific meaning of the terms in this disclosure will be understood by those of ordinary skill in the art as the case may be.
In the present disclosure, "parallel" refers to a state in which two straight lines form an angle of-10 ° or more and 10 ° or less, and thus, a state in which the angle is-5 ° or more and 5 ° or less is also included. The term "perpendicular" refers to a state in which the angle formed by two straight lines is 80 ° or more and 100 ° or less, and thus includes a state in which the angle is 85 ° or more and 95 ° or less.
There is a strong correlation between the defects of the dark spots and the pixel loss of the evaporation section and the material splashing. The bad principle is inferred as: in the vapor deposition process, a carrier carrying an organic material is required, and a linear evaporation source is the most widely adopted organic material vapor deposition system at present. The net plate assembly is added in the line source, so that the airflow in the crucible can be effectively balanced; however, in actual production, along with intervention of mechanism action, particularly for molten materials, vibration splashing occurs under the condition that the melting point is higher than the melting point, so that organic materials are evaporated to the lower surface of a Mask (Mask), the holes of the Mask can be blocked, thin film pixel points evaporated onto a substrate in the follow-up process are lost, and the corresponding pixel points of a product panel cannot emit light; particles (parts) generated by material splashing easily cause static electricity to be generated on the mask, and the mask is damaged; in the evaporation process of the linear evaporation source, the movement airflow of the mechanism is unstable, so that the evaporation rate is fluctuated, and the fluctuation of the evaporation rate exceeds the standard rate (spec) +/-1.5%, so that downtime and uneven film thickness of products are very easy to occur.
Fig. 1 shows an evaporation source device according to an embodiment. As shown in fig. 1, the evaporation source apparatus includes a crucible body 1, a nozzle 2 provided at one side of the crucible body 1, and a first mesh plate 3 provided between the crucible body 1 and the nozzle 2. The crucible body 1 comprises a bottom wall and a side wall surrounding the bottom wall, the bottom wall and the side wall enclose an accommodating cavity with an opening, the nozzle 2 is arranged at the opening of the accommodating cavity, the accommodating cavity is used for accommodating the evaporation material 4, the nozzle 2 comprises air spraying holes 21, the first screen 3 is provided with a plurality of meshes, the evaporation air flow reaches the nozzle 2 through the plurality of meshes of the first screen 3, is sprayed out from the air spraying holes 21 of the nozzle 2, and is deposited on the substrate 6 through the mask 5 to form a film layer. The vapor deposition air flow is directly connected with the nozzle 2 without buffer, so that the risk of directly spraying large particle materials is present, and the vapor deposition air flow is easy to splash. As shown in fig. 2, there may be a splash 7 on the mask 5, and the splash 7 may block the openings of the mask 5, resulting in poor dark spots, and in addition, may cause static electricity to be generated on the mask 5. In addition, there may be a splash 7 on the substrate 6, resulting in uneven film thickness. In the embodiment of the disclosure, by adding the net plates with trapezoid or V-shaped openings, the air flow generates a similar vortex effect through the air hole channels between the two layers of net plates, so that splashing is reduced, and bad dark spots, damage to a mask plate and the like are avoided.
Fig. 3 is a schematic view of an evaporation crucible according to an exemplary embodiment. As shown in fig. 3, the evaporation crucible provided in this embodiment may include:
a crucible body 1, wherein the crucible body 1 comprises a bottom wall 11 and a side wall 12 arranged around the bottom wall 11, and the bottom wall 11 and the side wall 12 enclose a containing cavity with an opening for containing evaporation materials;
the screen plate assembly is arranged in the accommodating cavity, and can comprise a first screen plate 3 and a second screen plate 10 arranged on one side of the first screen plate 3 far away from the bottom wall 11, wherein an avoidance gap is formed between the first screen plate 3 and the second screen plate 10, and at least one first mesh hole 31 for the vapor deposition material to pass through is formed in the first screen plate 3; the second mesh plate 10 includes an opening portion 100, the opening portion 100 is provided with at least one second mesh 32 through which the vapor deposition material passes, a cross section of the opening portion 100 includes at least one opening unit 110 on a plane perpendicular to the bottom wall 11, and an opening of the opening unit 110 faces the bottom wall 11 or faces away from the bottom wall 11, and a cross section of the opening unit 110 is V-shaped or trapezoidal;
the nozzle 2 is arranged at the opening of the accommodating cavity, and the nozzle 2 is provided with an air injection hole 21.
According to the evaporation crucible provided by the embodiment of the disclosure, the screen plate assembly is added between the crucible body 1 and the nozzle 2, and during evaporation, a coating material is placed between the screen plate assembly and the bottom wall 11. The first mesh plate 3 and the second mesh plate 10 can reduce the sectional area of the vapor diffusion channel, thereby increasing the air pressure of the lower side of the accommodating chamber. The air pressure at the lower side of the accommodating cavity is increased, so that the speed of vapor passing through the screen plate assembly is more stable, the vapor content at the lower side of the accommodating cavity can be increased, the air pressure fluctuation at the lower side of the accommodating cavity caused by the change of the vapor generation amount is further reduced, the vapor of the material evaporated in the crucible is ensured to be uniformly sprayed out, the speed fluctuation of the vapor passing through the screen plate assembly is reduced, and the air spraying speed fluctuation of the nozzle 2 is further reduced. The air flow can generate similar vortex effect through the mesh channels of the first mesh plate 3 and the second mesh plate 10, so that splashes are attached to the corners of the second mesh plate 10 and the crucible body 1, particles sprayed out from the nozzles 2 are reduced, dark spots are reduced, and mask damage is avoided.
In an exemplary embodiment, the first mesh plate 3 and the second mesh plate 10 may be fixed in the receiving chamber in various ways. For example, a plurality of clamping grooves, a plurality of supporting blocks, a supporting surface surrounding the side wall 12, or the like may be provided on the side wall 12, and the first screen 3 and the second screen 10 may be fixed by the clamping grooves, the supporting blocks, the supporting surface, or the like.
In an exemplary embodiment, the first mesh plate 3 and the bottom wall 11 are substantially uniform in size, and the edge of the first mesh plate 3 abuts against the side wall 12, so that vapor deposition gas flow can pass through the first mesh openings 31 only from the side of the first mesh plate 3 near the bottom wall 11 to the side of the first mesh plate 3 away from the bottom wall 11. The second mesh plate 10 is similar, and the edge of the second mesh plate 10 abuts against the side wall 12, so that vapor deposition gas flow can reach the side of the second mesh plate 10 away from the first mesh plate 3 from the side of the second mesh plate 10 close to the first mesh plate 3 through the second mesh holes 32.
In an exemplary embodiment, the cross section of the opening 100 may include two opening units 110 having the same opening direction on a plane perpendicular to the bottom wall 11, for example, as shown in fig. 3, the cross section of the opening 100 may include two opening units 110 having opening directions facing away from the bottom wall 11. However, the embodiment of the present disclosure is not limited thereto, and the cross section of the opening part 100 may include one opening unit 110 or more than 2 opening units 110 having the same opening direction on a plane perpendicular to the bottom wall 11.
In an exemplary embodiment, the two opening units 110 may be located at both sides of the central axis a of the gas injection hole 21, respectively.
In an exemplary embodiment, the two opening units 110 may be symmetrically disposed along the central axis a. The symmetrical arrangement can make the vapor deposition airflow more balanced, and reduce the fluctuation of vapor deposition airflow rate.
In an exemplary embodiment, when the opening unit 110 is trapezoidal, the openings of the opening unit 110 are sequentially increased in the opening direction.
In an exemplary embodiment, the opening unit 110 may include the first and second fold line portions 101 and 102 (as shown in fig. 4, the opening unit 110 has a V-shape) or include the first and second fold line portions 101, 103 and 102 (as shown in fig. 3, the opening unit 110 has a trapezoid shape) connected in sequence on a plane perpendicular to the bottom wall 11. The angles between the first folding line portion 101, the second folding line portion 102 and the bottom wall 11 may be 45 degrees to 60 degrees. As shown in fig. 3, the angle k1 between the first fold line portion 101 and the bottom wall 11 may be 45 degrees to 60 degrees, and the angle k2 between the second fold line portion 102 and the bottom wall 11 may be 45 degrees to 60 degrees.
In an exemplary embodiment, the angle k1 between the first fold line portion 101 and the bottom wall 11 and the angle k2 between the second fold line portion 102 and the bottom wall 11 may be the same.
In an exemplary embodiment, the lengths of the first folding line portion 101 and the second folding line portion 102 may be the same.
In an exemplary implementation, the connection portion 103 may be parallel to the bottom wall 11.
In an exemplary embodiment, as shown in fig. 3, the second screen 10 may further include a plate portion 120, where the plate portion 120 may be connected to the opening portion 100, and the plate portion 120 may have no mesh (i.e., the plate portion 120 has no channel through which the vapor deposition material may pass), and the orthographic projection of the gas injection holes 21 may be located within the orthographic projection of the plate portion 120 on a plane parallel to the bottom wall 11. In this embodiment, the flat plate portion 120 is used to shield the vapor deposition gas flow, so as to prevent the vapor deposition gas flow from being directly connected with the gas injection holes 21 without buffering, and avoid the vibration and splashing of the material in the crucible caused by the action of the mechanism, so that the large-particle material is directly sprayed out through the gas injection holes 21, and the splashing is reduced. In another exemplary embodiment, the orthographic projection of the gas injection holes 21 may be partially located within the orthographic projection of the flat plate portion 120 on a plane parallel to the bottom wall 11. That is, only the region corresponding to the gas injection holes 21 is partially shielded, and part of the splashes can be blocked, so that the splashes sprayed from the gas injection holes 21 are reduced, and the blockage of the gas injection holes 21 is avoided. However, the embodiment of the present disclosure is not limited thereto, and in another exemplary embodiment, the flat plate portion 120 may not be provided.
In an exemplary embodiment, the orthographic projection of the nozzle 2 is located within the orthographic projection of the flat plate portion 120 on a plane parallel to the bottom wall 11. The solution provided by this embodiment increases the area of the plate portion 120, and better prevents large particulate materials from entering the gas injection holes 21. As shown in fig. 3, the flat plate portion 120 is larger, and the front projection of the flat plate portion 120 may overlap with the front projection of the opening portion 100 on a plane parallel to the bottom wall 11.
In another exemplary embodiment, the flat plate portion 120 has a common component with the opening portion 100. As shown in fig. 6, a part of the flat plate portion 120 is also a part of the opening portion 100, for example, a part of the flat plate portion 120 serves as the connection portion 103.
In an exemplary embodiment, the flat plate portion 120 may be located at a side of the opening portion 100 near the nozzle 2. As shown in fig. 3.
In an exemplary embodiment, the first mesh plate 3 is parallel to the bottom wall 11. The first screen 3 is parallel to the bottom wall 11, so that the air pressure in the accommodating cavity is more balanced, and the air flow rate is more balanced.
In an exemplary embodiment, the flat plate portion 120 may be parallel to the bottom wall 11. The parallel arrangement of the flat plate portion 120 and the bottom wall 11 can make the air pressure in the accommodating cavity more uniform, so that the air flow rate is more uniform.
In an exemplary embodiment, the first net plate 3 is provided with uniformly distributed first net holes 31.
In an exemplary embodiment, the second mesh holes 32 are uniformly distributed in the opening portions 100 of the second mesh plate 10 (when there is a common component between the opening portions 100 and the flat plate portion 120, they are uniformly distributed in other areas of the opening portions 100 except the common component). For example, as shown in fig. 3, the second mesh holes 32 are uniformly distributed in the first fold line portion 101, the second fold line portion 102, and the connection portion 103. As shown in fig. 6, the second mesh openings 32 are uniformly distributed in the first and second fold line portions 101 and 102, and the connection portion 103 has no second mesh openings 32.
In an exemplary embodiment, the first mesh 31 and the second mesh 32 are, for example, circular holes, and the aperture of the second mesh 32 (i.e., the diameter of the second mesh 32) may be smaller than the aperture of the first mesh 31. The second mesh 32 has a smaller pore size than the first mesh 31, and can reduce splash more effectively.
In an exemplary embodiment, the second mesh 32 has a pore size of, for example, 3±0.5 millimeters (mm). The pore size of the second mesh 32 may be other values, for example only.
In an exemplary embodiment, the shortest distance d1 between the second screen 10 and the nozzle 2 along the direction perpendicular to the bottom wall 11 is, for example, 0.5 centimeters (cm) to 1cm. As shown in fig. 3, the shortest distance d1 is, for example, a distance between the flat plate portion 120 and the nozzle 2 in a direction perpendicular to the bottom wall 11. In another exemplary embodiment, as shown in fig. 5, the shortest distance d1 is, for example, a distance between the connection portion 103 and the nozzle 2 in a direction perpendicular to the bottom wall 11.
In an exemplary embodiment, the shortest distance d2 between the second mesh plate 10 and the first mesh plate 3 along the direction perpendicular to the bottom wall 11 is, for example, 1cm to 2cm. As shown in fig. 3, the shortest distance d2 is, for example, a distance between the connecting portion 103 and the first mesh plate 3 in a direction perpendicular to the bottom wall 11. As shown in fig. 5, the shortest distance d2 is, for example, a distance between the flat plate portion 120 and the first mesh plate 3 in a direction perpendicular to the bottom wall 11.
In an exemplary embodiment, the avoiding gaps between the first mesh plate 3 and the second mesh plate 10 may be filled with silicon nitride particles, and the silicon nitride particles may absorb ash (oxide, impurities and other components of the coating material as main components) in vapor in the evaporation process, so that the vapor may not be affected by the silicon nitride particles and may diffuse to the upper side of the accommodating cavity (the side of the mesh plate assembly away from the bottom wall 11) through the mesh plate assembly. The silicon nitride particles are only examples, and silicon carbide particles or other particles which are resistant to high temperature, do not react with the coating material and do not deform can be used for replacing the silicon nitride.
In an exemplary embodiment, the screen assembly may be made of a material that is resistant to high temperatures and that does not react with the plating material. Wherein, "high temperature resistant" means: can withstand the temperature during the evaporation process; the method is characterized in that the stable structural form can be maintained in the evaporation process, and chemical reaction can not be generated. Illustratively, the screen assembly may be made of stainless steel (e.g., SUS316 stainless steel), titanium alloy (e.g., technical grade TA 1), molybdenum, tungsten, platinum, etc.; on one hand, the material has good heat resistance and stable physical property under the vacuum environment, can not react with a coating material, and is not easy to deform; on the other hand, the material can resist acid washing, can be reused, and saves production cost.
Fig. 5 is a schematic view of an evaporation crucible provided in another exemplary embodiment. In this embodiment, on a plane perpendicular to the bottom wall 11, the cross section of the second mesh plate 10 may include two opening units 110 having the same opening direction, and the opening direction of the opening units 110 is toward the bottom wall 11. The plate portion 120 may be located on a side of the opening portion 100 away from the nozzle 2. Reference is made to the previous embodiment for the remaining details, which are not repeated.
Fig. 6 is a schematic view of an evaporation crucible provided in another exemplary embodiment. In this embodiment, the second screen 10 includes an opening 100 and a flat plate 120, and the cross section of the opening 100 includes only one V-shaped or trapezoidal opening unit 110 on a plane parallel to the bottom wall 11, and in this embodiment, the opening direction of the opening unit 110 is far from the bottom wall 11. When the opening unit is trapezoidal, the opening unit 110 includes a first fold line portion 101, a connection portion 103, and a second fold line portion 102. In another exemplary implementation, the opening unit 110 may include a first fold line portion 101 and a second fold line portion 102 (when the opening unit 110 is V-shaped). The first and second fold line portions 101 and 102 may be located at both sides of the central axis a of the gas injection hole 21, respectively. The angle k1 between the first fold line portion 101 and the bottom wall 11 may be the same as the angle k2 between the second fold line portion and the bottom wall 11. The first and second fold line portions 101 and 102 may be symmetrical along the central axis a. The flat plate portion 120 may be located on a side of the opening portion 100 away from the nozzle 2, i.e., closer to the first net plate 3. A part of the flat plate portion 120 serves as the connection portion 103. Reference may be made to the foregoing embodiments for further details, which are not repeated.
Fig. 7 is a schematic view of an evaporation crucible provided in another exemplary embodiment. Similar to the evaporation crucible shown in fig. 6, in this embodiment, the second mesh plate 10 includes an opening portion 100 and a flat plate portion 120, and the cross section of the opening portion 100 includes a V-shaped or trapezoid-shaped opening unit 110 on a plane parallel to the bottom wall 11, and in this embodiment, the opening direction of the opening unit 110 is toward the bottom wall 11. The plate portion 120 may be located on a side of the opening portion 100 near the nozzle 2. Reference is made to the previous embodiment for the remaining details, which are not repeated.
Fig. 8 is a schematic view of vapor deposition using the vapor deposition crucible shown in fig. 3. As shown in fig. 8, when the evaporation crucible shown in fig. 3 is used for evaporation, the evaporation airflow forms a similar vortex effect, and the splash particles 7 are attached to the corners of the second screen 10 and the crucible body 1, so that the increase of splashes or the blockage of the openings of the pixels of the mask plate caused by splashing is effectively avoided. The improvement of the scheme shown in fig. 3 compared to the evaporation scheme shown in fig. 1 includes: 1. determining that the particle number is reduced from 463 particles which are the average value before improvement to 34 particles 3 hours after the target speed is reached; the bad dark spot is reduced from > 32% to < 1.2%; 2. the stability of vapor deposition air flow is improved, the vapor deposition air flow rate is changed from standard rate +/-1.5% to standard rate +/-0.8%, and the air flow rate is more stable. 3. The cleaning frequency of a Fine Metal Mask (FMM) for vapor plating is increased from 50 pieces (pcs) per time to 90pcs per time, namely, the splash on the Mask is reduced, so that the damage rate of the Mask can be reduced. It can be seen that by adopting the scheme provided by the embodiment of the disclosure, the generated splashes can be greatly reduced, the bad dark spots are reduced, the damage rate of the mask plate is reduced, the cost is reduced, and the yield is improved.
The embodiment of the disclosure also provides an evaporation system, which comprises the evaporation crucible of the embodiment. The vapor deposition system may further include a heating device or the like for heating the vapor deposition crucible to vaporize the vapor deposition material.
Although the embodiments of the present invention are described above, the embodiments are only used for facilitating understanding of the present invention, and are not intended to limit the present invention. Any person skilled in the art can make any modification and variation in form and detail without departing from the spirit and scope of the present disclosure, but the scope of the present disclosure is to be determined by the appended claims.

Claims (12)

1. An evaporation crucible, comprising:
the crucible comprises a crucible body, wherein the crucible body comprises a bottom wall and a side wall arranged around the bottom wall, and the bottom wall and the side wall enclose a containing cavity with an opening for containing evaporation materials;
the mesh plate assembly is arranged in the accommodating cavity and comprises a first mesh plate and a second mesh plate arranged on one side, far away from the bottom wall, of the first mesh plate, an avoidance gap is formed between the first mesh plate and the second mesh plate, silicon nitride particles or silicon carbide particles are filled in the avoidance gap, and at least one first mesh hole for the vapor deposition material to pass through is formed in the first mesh plate; the second screen plate comprises an opening part, at least one second mesh hole for the vapor deposition material to pass through is arranged in the opening part, the cross section of the opening part comprises at least one opening unit on a plane perpendicular to the bottom wall, the opening of the opening unit faces the bottom wall or faces away from the bottom wall, and the opening unit is V-shaped or trapezoid;
the nozzle is arranged at the opening of the accommodating cavity and is provided with an air spraying hole.
2. The evaporation crucible according to claim 1, wherein the cross section of the opening portion includes two opening units having the same opening direction on a plane perpendicular to the bottom wall, the two opening units being located on both sides of a central axis of the gas injection hole, respectively.
3. The evaporation crucible according to claim 2, wherein the opening unit includes a first fold line portion and a second fold line portion, or includes a first fold line portion, a connection portion, and a second fold line portion connected in this order, on a plane perpendicular to the bottom wall, and an included angle of the first fold line portion, the second fold line portion, and the bottom wall is 45 degrees to 60 degrees.
4. The evaporation crucible according to claim 1, wherein the cross section of the opening portion includes one of the opening units including a first fold line portion and a second fold line portion, or including a first fold line portion, a connection portion, and a second fold line portion connected in this order, on a plane perpendicular to the bottom wall, the first fold line portion and the second fold line portion being located on both sides of a central axis of the gas ejection hole, respectively.
5. The evaporation crucible according to claim 3 or 4, wherein a first angle between the first fold line portion and the bottom wall is equal in magnitude to a second angle between the second fold line portion and the bottom wall.
6. The evaporation crucible according to claim 1, wherein said second mesh plate further comprises a flat plate portion connected to said opening portion or having a common component with said opening portion, said flat plate portion having no mesh, and an orthographic projection of said gas injection hole being located within an orthographic projection of said flat plate portion on a plane parallel to said bottom wall.
7. The evaporation crucible according to claim 6, wherein the orthographic projection of the nozzle is located within the orthographic projection of the flat plate portion on a plane parallel to the bottom wall.
8. The evaporation crucible according to claim 6, wherein said first mesh plate is parallel to said bottom wall, and said flat plate portion is parallel to said bottom wall.
9. The evaporation crucible according to any one of claims 1 to 4, 6 to 8, wherein the shortest distance between said second mesh plate and said first mesh plate in a direction perpendicular to said bottom wall is 1cm to 2cm.
10. The evaporation crucible according to any one of claims 1 to 4, 6 to 8, wherein the shortest distance between said second mesh plate and said nozzle in a direction perpendicular to said bottom wall is 0.5 cm to 1cm.
11. The evaporation crucible according to any one of claims 1 to 4, 6 to 8, wherein the second mesh has a smaller pore size than the first mesh.
12. A vapor deposition system comprising the vapor deposition crucible according to any one of claims 1 to 11.
CN202210168538.8A 2022-02-23 2022-02-23 Evaporation crucible and evaporation system Active CN114481038B (en)

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CN105177507A (en) * 2015-09-08 2015-12-23 京东方科技集团股份有限公司 Evaporation crucible and evaporation equipment
CN108823534A (en) * 2018-06-25 2018-11-16 京东方科技集团股份有限公司 Vacuum evaporation crucible and vacuum evaporation equipment
CN112301314A (en) * 2020-10-29 2021-02-02 合肥维信诺科技有限公司 Evaporation crucible and evaporation device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105177507A (en) * 2015-09-08 2015-12-23 京东方科技集团股份有限公司 Evaporation crucible and evaporation equipment
CN108823534A (en) * 2018-06-25 2018-11-16 京东方科技集团股份有限公司 Vacuum evaporation crucible and vacuum evaporation equipment
CN112301314A (en) * 2020-10-29 2021-02-02 合肥维信诺科技有限公司 Evaporation crucible and evaporation device

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