CN103132044B - A kind of shielding case improving planar target plated film homogeneity - Google Patents
A kind of shielding case improving planar target plated film homogeneity Download PDFInfo
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- CN103132044B CN103132044B CN201310097044.6A CN201310097044A CN103132044B CN 103132044 B CN103132044 B CN 103132044B CN 201310097044 A CN201310097044 A CN 201310097044A CN 103132044 B CN103132044 B CN 103132044B
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- shielding case
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- planar target
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- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 19
- 238000009826 distribution Methods 0.000 claims description 7
- 238000010849 ion bombardment Methods 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 claims 2
- 239000010408 film Substances 0.000 abstract description 24
- 239000011248 coating agent Substances 0.000 abstract description 23
- 238000000576 coating method Methods 0.000 abstract description 23
- 238000005240 physical vapour deposition Methods 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000012360 testing method Methods 0.000 description 8
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- 238000009423 ventilation Methods 0.000 description 2
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Abstract
The present invention relates to a kind of shielding case band blast fence of magnetron sputtering coater planar target, be used for improving plated film homogeneity, belong to technical field of thin-film solar.The object of the invention is to provide a kind of the shielding case device that can improve plated film homogeneity and screen method of PVD coating equipment, improves the efficiency of conversion <b> of thin-film solar cells in the hope of improving plated film homogeneity.</b> technical characteristic of the present invention shielding case (10) has the blast fence (11) of protection tracheae (9) overdraught aperture gas to make the well-mixed thin stream device of air-flow.Method be with on shielding case (10) with blast fence (11), have a little long slit therebetween, surround tracheae (9) with blast fence (11) and protect the aperture on it not bombarded.The present invention improves homogeneity and the coating quality of rete significantly.Improve the coating quality of coating equipment.
Description
Technical field
The present invention relates to a kind of shielding case band blast fence of magnetron sputtering coater planar target, be used for improving plated film homogeneity, belong to technical field of thin-film solar.
Background technology
General by magnetron sputtering referred to as PVD, magnetic-controlled sputtering coating equipment or title PVD coating equipment are widely used in the industry depositional coating techniques such as solar cell, touch-screen, TFT, its principle of work is by particle encounter target material surface, the plasma-deposited thin film layer of magnetron sputtering.At present, existing solar cell generally adopts planar target in manufacturing, and this planar target technology is more more ripe and stable than rotating target technology.The structure of planar target is generally that target and backboard are fixed on magnetic receiver, and magnet set is placed in magnetic receiver inside, and the magnetic receiver that cover plate is housed is arranged in sealed vacuum chamber body; The outside of target installs the cathode shield of band opening additional; The tracheae of logical argon gas is installed in cathode shield, tracheae has towards the aperture of target; Target connects the negative potential of negative high frequency electric source, and the vacuum chamber cavity of sealing connects positive electrode.Cathode shield working process passes into gas at the tracheal strips of logical argon gas to target material surface in advance, the glow discharge of deposition process target material surface before sputtering, and magnetron sputtering forms plasma body, through cathode shield opening at substrate surface depositional coating.Heavy to there will be thicknesses of layers uneven in big area for planar target, affects the transformation efficiency of film (non-crystalline silicon) solar cell.Such as back electrode AZO rete plating too thin, the light through photoelectric conversion layer (amorphous silicon layer) can be made fully not to be reflected back and to reach maximum " light seizure ", the transformation efficiency of photoelectric conversion layer (amorphous silicon battery) will be reduced like this.If the thick plating of AZO rete is too thick, light loss in AZO layer can be made to increase, and the transformation efficiency affecting photoelectric conversion layer (amorphous silicon battery) equally declines.Certainly, cause the factor of deposited film thickness ununiformity a lot of in production process, the Magnetic field inhomogeneity that as uneven in target material surface atmosphere, magnet set produces and above said cathode shield structure etc.Chinese Patent Application No. 200910167703.2 " a kind of method improving magnetron-sputtered film thickness uniformity " gives a kind of by adopting modifying mask between substrate and cathode target, reduces near circle centre position sedimentation rate, to realize the homogeneity of rete; But this technical scheme is under being based upon in vacuum chamber and passing into the uniform state of atmosphere, the gas that passes into namely arriving substrate surface keeps the constant modification method provided.And in the industrialization production process of reality, the common conduit passing into gas, may cause the nuance of airshed because of the size of production well on tracheae, air flow line can be partial to the opening part of cathode target target cover, causes the air-flow arriving target surface uneven.Along with target use procedure, the particle that the tracheae leading to argon gas shoots out, to the bombardment of tracheae, also can cause aperture bigger than normal to become larger, airshed is large, the energy of ion bombardment can increase, and more aggravates the deviation of tracheae bore size, again causes the in uneven thickness of deposited film.
Summary of the invention
The present invention is intended to solve above said magnetron sputtering planar target and there is the even problem of sputter coating thickness ununiformity, there will be the conduit passing into gas under normal circumstances, size because of production well on tracheae can cause the nuance of airshed, causes the air-flow arriving target surface uneven.And provide a kind of through repeatedly commerical test and testing research draw this kind of technical solution.
The cathode target that can improve plated film homogeneity that an object of the present invention is to provide a kind of PVD coating equipment dredges stream device, reaches constant as far as possible in the hope of the gas that passes into arriving substrate surface, to improve the efficiency of conversion that plated film homogeneity improves thin-film solar cells
.
How namely another object of the present invention break through the bottleneck that prior art exists, and effectively protects the pore of the ventilation of the ventpipe in cathode target shielding case not bombarded, to keep air vent aperture constant, seek to improve the homogeneity of coating quality and conforming method.
For realizing task of the present invention; the technical solution proposed is: a kind of shielding case improving planar target plated film homogeneity; comprise vacuum cavity and planar target; and inlet pipe, the shielding case of PVD coating equipment planar cathode target there is protection ventpipe air-flow aperture and the thin stream device of dredging flow amount and air flow line.Thin stream device is arranged on the opening part in the shielding cover body of planar cathode target, to block the ventpipe in shielding case.Method utilizes thin stream device to block numerous apertures jet towards cathode targets on ventpipe.This baffle plate dredging stream device is in " Z " font or " L ".Thin stream plate in shielding case no matter in what shape, this dredge stream plate and shielding not between always leave the gas towards the gap of target, tracheae being filled with together and be discharged to target material surface by this gap.
Implement the positively effect that the present invention produces: the homogeneity and the coating quality that improve rete significantly.Improve the coating quality of coating equipment.Stream device dredged by shielding case of the present invention makes air-flow fully mix in baffle plate, forms one gap R with uniform pressure, continuous air-out.By the inspiration of bar Xing Dinglv Vs=f (Pd), when gap R is very little, under the state that stream pressure P is certain, firing voltage Vs needs the principle of very large ability starter.Sputtering voltage of the present invention is 300-500V, air-flow there will not be glow discharge in the baffle plate of thin stream device, thus the pore avoided on air inlet tracheae is by the impact of magnetron sputtering ion bombardment, ensure that tracheal orifice size is constant, contribute to homogeneity and the consistence of thickness of deposited film, finally contribute to the raising of cell integrated quality and efficiency of conversion.
Accompanying drawing explanation
The present invention will further illustrate its principle of work in conjunction with the following drawings.Silicon-based film solar cells generally applies magnetron sputtering technology, prepare back electrode film, using target as negative electrode, apply negative high voltage, substrate is as anode, electric field is formed between target and substrate, utilize magnetic field and electric field interaction, about beam electrons runs in target near surface spirrillum, constantly clashes into argon gas and produces ion, ion hits target surface and sputters target atom under electric field action, is deposited on substrate and obtains required conductive film layer.
Fig. 1. be structural representation of the present invention.
Fig. 2. be configuration schematic diagram in shielding case in Fig. 1 (cathode shield) 10.
Fig. 3. be slit R and air strength P between shielding case 10 of the present invention and blast fence 11.
Fig. 4. be prior art schematic diagram.
Fig. 5. be prior art air flow method schematic diagram.
Fig. 6. be for the present invention tests coating measure point distribution schematic diagram.Technique and data are respectively in Table 1-3.
Fig. 7. be the embodiment of the present invention 1 figure.
Fig. 8. be the embodiment of the present invention 2 figure.
Fig. 9. be the embodiment of the present invention 3 figure.
Figure 10. the schematic diagram of shielding case 10 of the present invention with stiffening web.
Silicon-based film solar cells generally applies magnetron sputtering technology, prepare back electrode film, using target as negative electrode, apply negative high voltage, shielding case 10 and vacuum cavity shell are anode, target 12 forms electric field as anode in chamber, in magnetic field and electric field interaction, about beam electrons target near surface spin shape run, continuous shock is sent argon gas here by tracheae 3 and is produced ion, ion hits target surface and sputters target atom under electric field action, is deposited on substrate 15 and obtains required conductive film layer.
Difference with the prior art for a better understanding of the present invention, contrasts the present invention and prior art respectively. and the configuration of Fig. 1 to Fig. 3 to be the present invention be PVD coating equipment, Fig. 4-5 is the configurations of prior art PVD coating equipment.
The present invention is shown in that Fig. 1 to Fig. 3 is compared with prior art Fig. 4-5. the cathode target of same section PVD coating equipment configuration comprises vacuum cavity 1, its cavity 1 there is opening, by shielding case or claim cathode shield 10 to be opening parts that anode is fixed on vacuum cavity 1, in cathode shield 10, configuration tracheae 9 comprises elbow 7, threeway 6 and screw sealing 14.The cover plate 2 corresponding with cathode shield 10 is fixed on the opening part of cavity 1, the magnetic receiver 7 be shielded in cathode shield 10 is fixed on cover plate 2, the unlisted N pole of magnet set 4(Fig. 1 is placed in magnetic receiver 7 inside), magnetic receiver 3 there are magnetic boots 5 in order to improve magnetic field linear distribution, the backboard 13 of target 12 is fixed on magnetic receiver 3, is planar target by above assembly.Target 12 can pass through screw or welding and backboard 13 to be fixed, and heat is led away by the water coolant that the surperficial heat of target 12 is passed into by backboard 13, avoids the excessive generation distortion of target 12 heat in cathode shield 10.Have an opening with on the outside corresponding cathode shield 10 of target 12, it is not shown in FIG. that the effect of this opening is that the particle sputtered out by target 12 is splashed to more than substrate 15(by this opening) go up depositional coating.The tracheae 9 that cathode shield 10 is equipped with and elbow 7 and threeway parts 6, be all for pass into target 12 surface during magnetron sputtering gas accessory.In the magnet set 4 of corresponding target 12, tracheae 9 in the magnetic field range that it produces is opened the aperture of row's internal diameter size consistent (between Φ 0.2mm-Φ 0.5mm), and the spacing between aperture is fixed consistent, its effect be allow pass into gas tracheae 9 on each aperture gas flow out roughly the same, thus reach plate out come thicknesses of layers basically identical.But if be coated with by prior art, thicknesses of layers is out also inconsistent.Reason improves working accuracy again and again to the processing small holes of tracheae 9, when still finding each aperture of airflow passes, and tolerance out or some difference.Tracing it to its cause is that gas is imported by tracheae 9, and the difference that pore opening brings due to mismachining tolerance, nuance can be brought to airshed.Test also finds, air flow line can be partial to the opening part of cathode shield 10, causes the air-flow arriving target 12 target surface also to there will be uneven.Show that aperture on tracheae 9 is due to mismachining tolerance, can cause thicknesses of layers uneven.Briefly, from the process that target 12 uses, because magnetron sputtering particle out can cause particle bombardment to tracheae 9, cause aperture bigger than normal under particle constantly bombards, aperture can become increasing, and airshed also can become large, causes the poly-increasing of energy of bombarding.The pore size of the aperture after such use for some time on tracheae 9 there will be severe deviations, needs through again adjusting, and to keep Aperture deviation little, ensure the homogeneity of thicknesses of layers, such processing step must slow productive temp.Unlike the prior art, owing to seeing prior art Shortcomings, so improve configuration in shielding case 10, increase blast fence 11 i.e. said thin stream device, its effect one, the aperture on protection tracheae 9 is not by magnetron sputtering ion bombardment in the present invention; The gas that tracheae 9 sprays to fill and fully mixes in blast fence by two.
In Fig. 3, the present invention configures gas-flow configuration baffle plate 11 on cathode shield 10 and tracheae 9 to the vacuum cavity 1 of PVD coating equipment and namely dredges stream device, this device is arranged between cathode shield 10 and tracheae 9, the blast fence 11 dredging stream device is arranged in cathode shield 10, and blast fence 11 is placed on the opening part of cathode shield 10, to change the direction that air-flow arrives target, make air-flow fully mixing in the blast fence 11 of thin stream device, air pressure can improve PVD coating equipment under reaching uniform pressure P and be coated with film quality.And aura can not reach tracheae 9 place, the spilehole avoided on tracheae 9 is subject to the impact of magnetron sputtering ion bombardment, avoid small-bore on tracheae 9 in the same size, air-flow is fully mixed in blast fence, vital effect is played for the homogeneity and consistence improving rete.Fig. 4-5 is that prior art and same section of the present invention are not repeated.
Fig. 6, the blast fence 11 that anode cap 10 of the present invention configures.Blast fence 11 leaves apart from slit gap together with R between surrounding with cathode shield 10, this slit is towards target 12, and air strength P distribution is towards target 12 surface.
In Fig. 6 A1-A22 be the present invention compared with the prior art to the distribution schematic diagram of done coating measure point.Test carries out plated film, sample presentation A1-A20 on magnetron sputtering continuous lines WDJ-2400 equipment, and the processing parameter of use is as table 1
The data of contrast test, subordinate list 2 is the uniformity coefficient 24% using the distribution of prior art plated film, uses the technology of the present invention solution, and the uniformity coefficient 7% of plated film distribution, improves 17%.
Specific embodiment
Composition graphs 7-10 of the present invention, further illustrates the positively effect of technical characterstic of the present invention and generation by 4 examples and sample presentation simultaneous test.
Embodiment 1
See Fig. 7, the cathode shield of the present embodiment adopts stainless steel materials flanging to be stamped to form, the cover body of shielding case 10 is concave shape, concave edge leaves edge fixing with cavity 1, shielding case 10 female side openings aims at target 12 and substrate 15, be used for being deposited to by plasma sputter on substrate 15, many equidistant spileholes that the tracheae 9 of the ventilation body installed in the bight of indent distributes are blocked by the blast fence 11 surrounded.Baffle plate 11 is welded in shielding case 10 inner corners, one side of baffle plate 11 and the side of cover body 10 leave the gap of 0.3mm, planar target is fixed on backboard 13 by target 12 and fixes with magnetic receiver 3, magnet set 4 is had in magnetic receiver 3 inside, magnetic receiver 3 is arranged on cover plate 2, then be fixed on vacuum cavity 1, shielding case 10 opening is just to target 12.Magnetron sputtering equipment does not add blast fence 11 to the substrate of same specification for shielding case 10 and adds blast fence 11 and deposits respectively, by measuring the same position A1 to A20 of deposition of thin thickness.
Embodiment 2
See Fig. 8, blast fence 11 sectional view is in " Z " font, tracheae 9 surrounds by the opening part in cathode shield 10, blast fence 11 is while be arranged on cathode shield 10 wall and can be screwed, the other side of blast fence 11 and the distance leaving an elongate slot R between cathode shield 10 are 0.2mm, slit gap is towards target 12, make air flow direction target 12 surface, the biography roller 16 of PVC coating equipment send substrate 15, at vacuum cavity 1 magnetron sputtering deposition plating on substrate 15, insulating mat 17 is added between cover plate 2 and vacuum cavity 1.At the opening part of the shielding case 10 of planar target, blast fence 11 is installed, surround tracheae 9 in cathode shield 10, before the aperture of giving vent to anger of gear on tracheae 9, prevent aperture from suffering magnetron sputtering ion bombardment, one is had towards the long together slit of target 12 continuous air-out between blast fence 11 and cathode shield 10, when the spacing R(of blast fence 11 and cathode shield 10 is shown in Fig. 3) very little time, can air flow line be changed, and the abundant mixed stability of air-flow is flowed out.
Embodiment 3
See Fig. 9
The difference of the present embodiment and embodiment 2 is only different at the moulding process of shielding case 10 and blast fence 11, the present embodiment shielding case 10 and blast fence 11 adopt once shaped, be convenient to quick installation, the other side of blast fence 11 and the distance leaving an elongate slot R between cathode shield 10 are 0.4mm, other is identical with embodiment 2, at this, repeat no more.
Embodiment 4
See that Figure 10 the present embodiment is that former blast fence 11 is increased stiffening web 201, make blast fence not because of oversize distortion, the difference of the present embodiment and embodiment 3 is that the blast fence 11 ' of the present embodiment and cathode shield 11 are formed in one, and make installation more convenient and quicker, other function is all identical.
Table 1
By prior art, when the original tracheae of employing and anode cap, carry out thicknesses of layers test after being used for a while.Shown in marking in Fig. 6, record the substrate membrane layer thickness of its correspondence position, concrete data are as follows:
Table 2
From above-mentioned data, the ununiformity of thicknesses of layers is 24%, illustrates that the otherness of thicknesses of layers is very large.The account form of ununiformity is: (max-min)/(max+min).General rete consistence ununiformity represents, the numerical value of ununiformity is larger, illustrates that consistence is poorer.
Same magnetron sputtering continuous lines WDJ-2400 equipment carries out plated film A1-A21, and the processing parameter of use is with embodiment 1.But the cathode shield that the present invention adopts and tracheae, measure the substrate membrane layer thickness of mark shown in Fig. 6, concrete data are as follows:
Table 3
From above-mentioned data, the ununiformity of thicknesses of layers is 7%, illustrates that the otherness of thicknesses of layers has reduced a lot.
Claims (11)
1. one kind is improved the shielding case of planar target plated film homogeneity, comprise vacuum cavity, planar target and substrate, it is characterized in that shielding case (10) having an air-flow dredge stream device, the spilehole that this unit protection tracheae (9) is given vent to anger, said shielding case (10) and air-flow are dredged to flow a long and narrow gap towards target (12) (R) between device, it is a blast fence (11) that described air-flow dredges stream device, this baffle plate (11) and shielding case (10) surround tracheae (9), long slit between described shielding case (10) side and blast fence (11) is apart 0.2 ~ 0.4mm.
2. a kind of shielding case improving planar target plated film homogeneity according to claim 1, is characterized in that blast fence (11) opening part be arranged in shielding case (10) dredging stream device blocks the aperture that ventpipe (9) is given vent to anger.
3. a kind of shielding case improving planar target plated film homogeneity according to claim 1, is characterized in that the blast fence (11) of described thin stream device is in " Z " font or " L " shape.
4. a kind of shielding case improving planar target plated film homogeneity according to claim 1, it is characterized in that the cover body of described shielding case (10) is concave shape, spill limit one side is arranged on vacuum cavity (1) inwall.
5. a kind of shielding case improving planar target plated film homogeneity according to claim 4, is characterized in that described shielding case (10) female side openings aims at target (12), by magnetron sputtering ion deposition on substrate (15).
6. a kind of shielding case improving planar target plated film homogeneity according to claim 1, is characterized in that the many equidistant spileholes of the upper distribution of the described tracheae (9) surrounded by blast fence (11) and shielding case (10).
7. a kind of shielding case improving planar target plated film homogeneity according to claim 1, is characterized in that described shielding case (10) and blast fence (11) are that disposal molding forms and surrounds tracheae (9).
8. according to claim 1-7 wherein a kind of shielding case improving planar target plated film homogeneity described in any one, it is characterized in that described shielding case (10) and blast fence (11) form disposal molding, and have in blast fence (11) between a side and shielding case (10) and leave a long slit (R).
9. one kind is improved the method that planar target plated film homogeneity forms shielding; comprise vacuum cavity; planar target and substrate; it is characterized in that blast fence (11) and shielding case (10) surround tracheae (9) and protect the spilehole of giving vent to anger on tracheae that air-flow is fully mixed in blast fence (11); one side shielding case (10) of blast fence (11) has a long slit (R), and the long slit between described shielding case (10) side and blast fence (11) is apart 0.2 ~ 0.4mm.
10. improve according to claim 9 one kind the method that planar target plated film homogeneity forms shielding, it is characterized in that described shielding case (10) and blast fence (11) disposal molding are formed and surround tracheae (9).
11. improve according to claim 9 one kind the method that planar target plated film homogeneity forms shielding, it is characterized in that described blast fence (11) sides are welded on shielding case (10), the other side of blast fence (11) and shielding case (10) leave a very little slit (R), make air-flow can not glow discharge in blast fence (11), avoid the aperture on magnetron sputtering ion bombardment tracheae (9).
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103643214B (en) * | 2013-12-20 | 2016-08-17 | 安徽省蚌埠华益导电膜玻璃有限公司 | Vacuum trachea prevents integrated membrane protective cover |
| CN104359423B (en) * | 2014-11-18 | 2017-02-22 | 刘杰波 | Surface profile measuring device |
| CN104878361B (en) * | 2015-06-24 | 2017-05-31 | 安徽纯源镀膜科技有限公司 | Magnetic-controlled sputtering coating equipment |
| CN108291293A (en) * | 2015-12-09 | 2018-07-17 | 应用材料公司 | It is configured in the system that sputtering sedimentation is carried out on substrate, the method for the screening arrangement of sputter deposition chamber and for providing electrical shielding in sputter deposition chamber |
| CN110095911B (en) * | 2018-09-06 | 2022-02-22 | 南通繁华新材料科技有限公司 | Preparation method of electrochromic device |
| CN109402585A (en) * | 2018-11-30 | 2019-03-01 | 浙江上方电子装备有限公司 | A kind of magnetic control sputtering vacuum coating equipment that process gas is evenly distributed |
| CN109355636A (en) * | 2018-12-15 | 2019-02-19 | 湖南玉丰真空科学技术有限公司 | A kind of continuous coating production line inlet and outlet room air charging system |
| CN113046710A (en) * | 2021-03-09 | 2021-06-29 | 蓝思科技（长沙）有限公司 | Magnetron sputtering coating uniformity adjusting device and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101542013A (en) * | 2007-06-04 | 2009-09-23 | 佳能安内华股份有限公司 | Film forming apparatus |
| JP2010090458A (en) * | 2008-10-10 | 2010-04-22 | Agc Techno Glass Co Ltd | Sputtering apparatus |
| JP2011122193A (en) * | 2009-12-09 | 2011-06-23 | Canon Anelva Corp | Gas introducing apparatus, sputtering apparatus and sputtering method |
-
2013
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101542013A (en) * | 2007-06-04 | 2009-09-23 | 佳能安内华股份有限公司 | Film forming apparatus |
| JP2010090458A (en) * | 2008-10-10 | 2010-04-22 | Agc Techno Glass Co Ltd | Sputtering apparatus |
| JP2011122193A (en) * | 2009-12-09 | 2011-06-23 | Canon Anelva Corp | Gas introducing apparatus, sputtering apparatus and sputtering method |
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