CN105950895A - Manufacturing method of micro-fine silver alloy bonding wire for small wafer LED packaging - Google Patents
Manufacturing method of micro-fine silver alloy bonding wire for small wafer LED packaging Download PDFInfo
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- CN105950895A CN105950895A CN201610293480.4A CN201610293480A CN105950895A CN 105950895 A CN105950895 A CN 105950895A CN 201610293480 A CN201610293480 A CN 201610293480A CN 105950895 A CN105950895 A CN 105950895A
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- 229910001316 Ag alloy Inorganic materials 0.000 title claims abstract description 136
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000010946 fine silver Substances 0.000 title claims abstract description 24
- 238000004806 packaging method and process Methods 0.000 title abstract description 4
- 239000000956 alloy Substances 0.000 claims abstract description 85
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 45
- 238000010438 heat treatment Methods 0.000 claims abstract description 38
- 238000005491 wire drawing Methods 0.000 claims abstract description 31
- 238000003723 Smelting Methods 0.000 claims abstract description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000009749 continuous casting Methods 0.000 claims abstract description 9
- 238000002844 melting Methods 0.000 claims abstract description 9
- 230000008018 melting Effects 0.000 claims abstract description 9
- 239000010944 silver (metal) Substances 0.000 claims description 74
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 43
- 238000001291 vacuum drying Methods 0.000 claims description 30
- 238000003756 stirring Methods 0.000 claims description 26
- 229910052684 Cerium Inorganic materials 0.000 claims description 25
- 229910052582 BN Inorganic materials 0.000 claims description 23
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 23
- 229910052746 lanthanum Inorganic materials 0.000 claims description 22
- 229910052709 silver Inorganic materials 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 16
- 238000005538 encapsulation Methods 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 14
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 10
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 10
- 238000010792 warming Methods 0.000 claims description 10
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 8
- 238000013019 agitation Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 238000007499 fusion processing Methods 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000011435 rock Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052756 noble gas Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 230000003026 anti-oxygenic effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/03—Making non-ferrous alloys by melting using master alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Metal Extraction Processes (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a manufacturing method of a micro-fine silver alloy bonding wire for small wafer LED packaging. The manufacturing method comprises the following steps that 1, smelting and continuous casting of a silver alloy bonding wire blank are conducted; 2, drawing of a silver alloy wire is conducted; 3, intermediate heat treatment of the silver alloy wire is conducted; and 4, the silver alloy wire subjected to intermediate heat treatment is manufactured into a silver alloy wire body with the diameter being 0.06-0.08 mm through a wire drawing machine in a drawing mode. According to the manufacturing method of the micro-fine silver alloy bonding wire for small wafer LED packaging, the defects of low strength and poor oxidation resistance of a bonding silver wire and other bonding silver alloy wires are overcome by optimizing alloy components, and the cost is effectively reduced; by using the vacuum melting ultrasonic vibration continuous casting technology, the alloy performance and the alloy consistency are improved, and a high-quality alloy wire blank is obtained; the alloy structure in the machining process is controlled through appropriate intermediate heat treatment, and local stress concentration during wire drawing is reduced; and the inlet angle of a wire drawing die is further optimized, wire breaking times in the wire drawing process are decreased, and the finished product rate of the micro-fine silver alloy bonding wire is ensured.
Description
Technical field
The invention belongs to technical field of semiconductor, relate generally to a kind of little wafer LED encapsulation fine bonding silver alloy wire and manufacture method thereof.
Background technology
Bonding wire plays the effect of connection silicon chip electrode and bringing-out of lead frame, and transmits the signal of telecommunication of chip, distributes the interior heat produced of chip, is the critical material of integrated antenna package.Wire bonding is very small feature size and the concentrated reflection of maximum output of semiconductor production, and the former shows as in the lead spacing that constantly reduces, and the latter is then embodied in the production efficiency stepped up.Thin space bonding needs the higher line of strength and stiffness, by to controlling to meet the needs of thin space bonding without air soldered ball (Free Air Ball) and heat affected area (Heat Affect Zone) length, in large scale integrated circuit and LED encapsulate, the technical specification of para-linkage line proposes the highest requirement, high-performance, ultra-fine bonding line demand increases rapidly, the improving constantly of chip density simultaneously, para-linkage reliability of material have higher requirement bonding line (bonding gold thread, linking copper wire, bonding alloy line etc.) play the effect that connection silicon chip electrode is sub with the bringing-out of lead frame, and transmit the signal of telecommunication of chip, the heat produced in distributing chip, it it is the critical material of integrated antenna package.Bonding silver wire and bonding silver alloy wire, due to its outstanding electric property (can reduce device high-frequency noise, reduce great power LED caloric value etc.), good stability and suitable cost factor, start to be applied in microelectronics Packaging, especially in LED encapsulates.But for fine silver line, the problem being primarily present the following aspects: 1) Ag line bonding process does not use N2+H2(Cu bonding line in use uses N in gas shield2+H2
Gas shield; relatively costly and there is potential safety hazard); in bonding process, parameter window scope is less; due to reasons such as thermal conductivity are high, oxidation rate is high; be easily caused Free Air Ball solidify uneven easy formation golf, bulb come to a point, the defect such as wave ball; affect the first Joint Strength and shape, reduce device yield and reliability；2) Ag line elevated temperature strength is low, and under hot conditions, inefficacy probability is higher, it is impossible to meet the use of the devices such as great power LED；3) weld Ag/Al interface under harsh conditions to be prone to produce the migration of Ag ion-conductance, cause Joint Strength decline and then affect device lifetime.For bonding silver alloy wire, it mostly is by adding Pd at present, the alloy of the elements such as Au, such silver alloy has good performance, the demand of part LED encapsulation can be met, but there is problem following aspects in such silver alloy: 1) can infinitely dissolve each other due to Au and Pd and Ag, after adding Au and Pd element in Ag, alloy strength increases limited, and for little wafer LED, its pad size is less, usually 40*40um, ultra-fine (line footpath is 0.012-0.016mm) bonding wire is needed to connect, this just requires that being bonded silver alloy wire has enough bonding strengths, thus, the silver alloy wire adding Au and Pd can not meet the requirement of little wafer LED encapsulation；2) after adding Au and Pd in fine silver, owing to its atomic arrangement mode and atomic radius are similar, the antioxygenic property of silver is improved limited by alloying element so that in bonding process, parameter area is less, causes its production efficiency to reduce；3) Au and Pd is noble metal, considerably increases the cost of bonding silver alloy wire.The addition of Ni element and rare earth element can effectively improve the intensity of silver alloy, the antioxygenic property improving silver and high-temperature stability.In addition, owing to little wafer LED encapsulation bonding silver alloy wire line footpath is relatively thin (line footpath is 0.012-0.016mm), for micro-fine wire is processed, raw-material compactness and concordance are the keys affecting fine wire drawing, and the intermediate heat-treatment of drawing process and wire-drawing die are the key factors affecting micro-fine wire processing.Therefore, optimize the component of silver alloy bonding line, improve intensity and the corrosion resistance of silver alloy bonding line, guarantee that silver alloy tissue and performance are consistent by vacuum melting excusing from death vibration continuous casting technology, use suitable intermediate heat-treatment and optimize wire-drawing die inlet angle, improve fine silver alloy wire manufacture method, significant for accelerating silver alloy wire application in little wafer LED encapsulates.
Summary of the invention
It is an object of the invention to provide a kind of little wafer LED encapsulation fine bonding silver alloy wire and manufacture method thereof, it can solve the shortcoming of existing bonding silver alloy wire, meet the use requirement of little wafer LED encapsulation.
For this, the present invention provides following technical scheme: a kind of little wafer LED encapsulates by fine bonding silver alloy wire and manufacture method thereof, comprise the steps: that smelting and continuous casting: a. of (1) silver alloy bonding line blank manufacture Ag/Ni intermediate alloy: put in vacuum drying oven boron nitride crucible by the Ag of mass fraction 90% and the Ni layering of mass fraction 10%, burner hearth evacuation to vacuum drying oven, vacuum is higher than 3.0 × 10-2After Pa, starting to warm up to 1450-1850 DEG C, fusion process vacuum is higher than 5 × 10-2Pa, then stands 10-20 minute, after Ag/Ni alloy is completely dissolved and molten metal change is limpid, is filled with Ar by boron nitride tube in Ag/Ni aluminium alloy2Stir 5-10 minute, then alloy is poured in water cooling mold cooling, obtains Ag/Ni intermediate alloy；B. manufacturing Ag/Ce, Ag/La intermediate alloy: put into by the Ag of mass fraction 95% in vacuum drying oven graphite crucible, put into by Ce or La of mass fraction 5% in vacuum drying oven Feeding box, the burner hearth evacuation to vacuum drying oven, vacuum is higher than 3.0 × 10-2After Pa, it is filled with Ar2To 0.1-0.5Mpa, the most again it is evacuated to vacuum higher than 3.0 × 10-2After Pa, start to warm up, after temperature rises to 600-800 DEG C, stop evacuation and in vacuum drying oven, be filled with Ar2To 0.1-0.5MPa；Then proceeding to be warming up to 1150-1250 DEG C, after silver is completely dissolved and silvering solution change is limpid, Ce or La is joined in crucible by mobile Feeding box, and is filled with Ar in g/Ce, Ag/La aluminium alloy2Stir 5-10 minute, then alloy melt is cooled down, obtain Ag/Ce, Ag/La excellent intermediate alloy；C. Ag/Ni intermediate alloy, Ag/Ce intermediate alloy, Ag/La intermediate alloy, Ag being weighed in following ratio in vacuum smelting furnace after calculating, wherein nickel (Ni) is 3-5wt%；Cerium (Ce) is 0.3-0.5 wt%；Lanthanum (La) is 0.3-0.5 wt%, and silver is that in surplus, and silver alloy, cerium (Ce) is identical with the mass fraction of lanthanum (La), is mixed to join in vacuum smelting furnace, is evacuated to 6.0 × 10-1More than Pa, starts to warm up, and after temperature rises to 600-800 DEG C, stops evacuation and is filled with Ar in vacuum smelting furnace2To 0.1-0.5MPa；Then proceed to be warming up to 1250-1450 DEG C, after alloy is completely dissolved, in silver alloy liquid, be filled with Ar2Stir 5-10 minute, alloy melt is cooled down, obtains silver alloy blank；D. being joined by silver alloy blank in vacuum melting electromagnetic agitation alloy conticaster crucible, crucible is boron nitride crucible, is evacuated to 6.0 × 10-1More than Pa, starts to warm up to 1250-1450 DEG C, treats that alloy is completely dissolved, and uses boron nitride stirring rod to stir 10-15 minute, after then refine stands 10-15 minute, is filled with high-purity Ar2To 1.05MPa-1.1MPa, begin with intermittent mode cast 8-12mm silver alloy bar；(2) drawing of silver alloy bar: the silver alloy bar of above-mentioned diameter 8-12mm is drawn into the silver alloy wire of a diameter of 1.0-1.5mm through wire drawing machine, drawing process uses unidirectional drawing；(3) intermediate heat-treatment of silver alloy wire: the silver alloy wire of diameter 1.0-1.5mm carries out in tube furnace intermediate heat-treatment, heat treatment process uses noble gas or N2Gas shield, heat treatment temperature is 550-750 DEG C, and heat treatment time is 2-5 minute；(4) silver alloy wire through intermediate heat-treatment is drawn into through wire drawing machine the silver alloy wire of diameter 0.06-0.08mm, then the silver alloy wire of a diameter of 0.06-0.08mm is become a diameter of 0.03-0.05mm fine rule through wire drawing machine continuous drawing, again by multiple tracks drawing on fine wire drawing machine, final acquisition diameter 0.012-0.018mm fine silver alloy bonding line, in drawing process, wire rod deformation rate is 5%-7%.
Further, the water cooling mold material of described cast Ag/Ni alloy is fine copper.
Further, the crystallizer of described conticaster is provided with electromagnetic agitation mechanism；Silver billon bar traction uses batch (-type) traction, and hauling speed is 50-300mm/ minute, second pull-in time 1-5,1-5 second idle hours.
Yet further, when described silver alloy shank diameter is more than 1.0-1.5mm, drawing process uses one way system draw, and drawing speed is 10-20m/ minute.
The most further, in described silver alloy wire pulling process, the inlet angle of wire-drawing die is 11 °-14 °.
In addition, the present invention also provides for a kind of little wafer LED fine bonding silver alloy wire of encapsulation manufactured by the manufacture method of the described little wafer LED fine bonding silver alloy wire of encapsulation, each Ingredients Weight percentage composition of this silver alloy bonding line material is: Ni 3-5wt%, Ce 0.3-0.5wt%, La 0.3-0.5wt%, Ag surplus, and Ce with La mass fraction is identical.
The little wafer LED fine bonding silver alloy wire of encapsulation that little wafer LED of the present invention encapsulation manufactures by the manufacture method of fine bonding silver alloy wire, eliminate bonding silver wire by optimized alloy composition and other is bonded the defect that silver alloy wire intensity is low, antioxygenic property is poor, and effectively reduce cost.By using vacuum melting excusing from death vibration continuous casting technology, improve alloy property, improve alloy concordance, obtain high-quality alloy wire blank, and control the organizational structure of alloy in the course of processing by suitable intermediate heat-treatment, reduce the stress raisers in wire drawing, one-step optimization wire-drawing die inlet angle of going forward side by side, reduce the broken string in drawing process, it is ensured that fine bonding silver alloy wire yield rate.
Detailed description of the invention
Embodiment one:
The manufacture method of fine bonding silver alloy bonding line is as follows:
(1) smelting and continuous casting: a. of silver alloy bonding line blank manufactures Ag/Ni intermediate alloy: putting in vacuum drying oven boron nitride crucible by the Ag of mass fraction 90% and the Ni layering of mass fraction 10%, the burner hearth evacuation to vacuum drying oven, vacuum is higher than 3.0 × 10-2After Pa, starting to warm up to 1450 DEG C, fusion process vacuum is higher than 3.0 × 10-2Pa, then stands 10 minutes, after Ag/Ni alloy is completely dissolved and molten metal change is limpid, is filled with Ar by boron nitride tube in Ag/Ni aluminium alloy2Stir 5 minutes, then alloy is poured in water cooling mold cooling, obtains Ag/Ni intermediate alloy；B. manufacturing Ag/Ce, Ag/La intermediate alloy: put into by the Ag of mass fraction 95% in vacuum drying oven graphite crucible, put into by Ce or La of mass fraction 5% in vacuum drying oven Feeding box, the burner hearth evacuation to vacuum drying oven, vacuum is higher than 3.0 × 10-2After Pa, it is filled with Ar2To 0.1Mpa, the most again it is evacuated to vacuum higher than 3.0 × 10-2After Pa, start to warm up, after temperature rises to 600 DEG C, stop evacuation and in vacuum drying oven, be filled with Ar2To 0.1MPa；Then proceeding to be warming up to 1150 DEG C, after silver is completely dissolved and silvering solution change is limpid, Ce or La is joined in crucible by mobile Feeding box, and rocks crucible stirring 5 minutes, then by alloy melt furnace cooling, obtains Ag/Ce, Ag/La excellent intermediate alloy；C. Ag/Ni intermediate alloy, Ag/Ce intermediate alloy, Ag/La intermediate alloy, Ag being weighed in following ratio in vacuum smelting furnace after calculating, wherein nickel (Ni) is 3wt%；Cerium (Ce) is 0.3wt%；Lanthanum (La) is 0.3 wt%, and silver is that in surplus, and silver alloy, cerium (Ce) is identical with the mass fraction of lanthanum (La), is mixed to join in vacuum smelting furnace, is evacuated to 5.0 × 10-1More than Pa, starts to warm up, and after temperature rises to 600 DEG C, stops evacuation and is filled with Ar in vacuum smelting furnace2To 0.1MPa；Then proceed to be warming up to 1250 DEG C, after alloy is completely dissolved, in silver alloy liquid, be filled with Ar2Stir 5 minutes, alloy melt is cooled down, obtains silver alloy blank；D. being joined by silver alloy blank in vacuum melting electromagnetic agitation alloy conticaster crucible, crucible is boron nitride crucible, is evacuated to 5.0 × 10-1More than Pa, starts to warm up to 1250 DEG C, treats that alloy is completely dissolved, and uses boron nitride stirring rod to stir 10 minutes, after then refine stands 15 minutes, is filled with high-purity Ar2To 1.05MPa, begin with intermittent mode cast 8mm silver alloy bar；
(2) drawing of silver alloy bar: the silver alloy bar of above-mentioned diameter 8mm is drawn into the silver alloy wire of a diameter of 1.0mm through wire drawing machine, drawing process uses unidirectional drawing；(3) intermediate heat-treatment of silver alloy wire: the silver alloy wire of diameter 1.0mm carries out in tube furnace intermediate heat-treatment, heat treatment process uses N2Gas shield, heat treatment temperature is 550 DEG C, and heat treatment time is 5 minutes；(4) silver alloy wire through intermediate heat-treatment is drawn into through wire drawing machine the silver alloy wire of diameter 0.06mm, then the silver alloy wire of a diameter of 0.06mm is become a diameter of 0.03mm fine rule through wire drawing machine continuous drawing, again by multiple tracks drawing on fine wire drawing machine, final acquisition diameter 0.012mm fine silver alloy bonding line, in drawing process, wire rod deformation rate is 5%, and die entrance angle is 11 °.
Embodiment two:
The manufacture method of fine silver billon bonding line is as follows:
(1) smelting and continuous casting: a. of silver alloy bonding line blank manufactures Ag/Ni intermediate alloy: putting in vacuum drying oven boron nitride crucible by the Ag of mass fraction 90% and the Ni layering of mass fraction 10%, the burner hearth evacuation to vacuum drying oven, vacuum is higher than 3.0 × 10-2After Pa, starting to warm up to 1650 DEG C, fusion process vacuum is higher than 3.0 × 10-2Pa, then stands 15 minutes, after Ag/Ni alloy is completely dissolved and molten metal change is limpid, is filled with Ar by boron nitride tube in Ag/Ni aluminium alloy2Stir 8 minutes, then alloy is poured in water cooling mold cooling, obtains Ag/Ni intermediate alloy；B. manufacturing Ag/Ce, Ag/La intermediate alloy: put into by the Ag of mass fraction 95% in vacuum drying oven graphite crucible, put into by Ce or La of mass fraction 5% in vacuum drying oven Feeding box, the burner hearth evacuation to vacuum drying oven, vacuum is higher than 3.0 × 10-2After Pa, it is filled with Ar2To 0.3Mpa, the most again it is evacuated to vacuum higher than 3.0 × 10-2After Pa, start to warm up, after temperature rises to 700 DEG C, stop evacuation and in vacuum drying oven, be filled with Ar2To 0.3MPa；Then proceeding to be warming up to 1200 DEG C, after silver is completely dissolved and silvering solution change is limpid, Ce or La is joined in crucible by mobile Feeding box, and rocks crucible stirring 8 minutes, then by alloy melt furnace cooling, obtains Ag/Ce, Ag/La excellent intermediate alloy；C. Ag/Ni intermediate alloy, Ag/Ce intermediate alloy, Ag/La intermediate alloy, Ag being weighed in following ratio in vacuum smelting furnace after calculating, wherein nickel (Ni) is 4wt%；Cerium (Ce) is 0.4wt%；Lanthanum (La) is 0.4 wt%, and silver is that in surplus, and silver alloy, cerium (Ce) is identical with the mass fraction of lanthanum (La), is mixed to join in vacuum smelting furnace, is evacuated to 5.0 × 10-1More than Pa, starts to warm up, and after temperature rises to 700 DEG C, stops evacuation and is filled with Ar in vacuum smelting furnace2To 0.3MPa；Then proceed to be warming up to 1350 DEG C, after alloy is completely dissolved, in silver alloy liquid, be filled with Ar2Stir 8 minutes, alloy melt is cooled down, obtains silver alloy blank；D. being joined by silver alloy blank in vacuum melting electromagnetic agitation alloy conticaster crucible, crucible is boron nitride crucible, is evacuated to 5.0 × 10-1More than Pa, starts to warm up to 1350 DEG C, treats that alloy is completely dissolved, and uses boron nitride stirring rod to stir 12 minutes, after then refine stands 18 minutes, is filled with high-purity Ar2To 1.07MPa, begin with intermittent mode cast 10mm silver alloy bar；
(2) drawing of silver alloy bar: the silver alloy bar of above-mentioned diameter 10mm is drawn into the silver alloy wire of a diameter of 1.2mm through wire drawing machine, drawing process uses unidirectional drawing；(3) intermediate heat-treatment of silver alloy wire: the silver alloy wire of diameter 1.2mm carries out in tube furnace intermediate heat-treatment, heat treatment process uses noble gas Ar2Protection, heat treatment temperature is 650 DEG C, and heat treatment time is 4 minutes；(4) silver alloy wire through intermediate heat-treatment is drawn into through wire drawing machine the silver alloy wire of diameter 0.07mm, then the silver alloy wire of a diameter of 0.07mm is become a diameter of 0.04mm fine rule through wire drawing machine continuous drawing, again by multiple tracks drawing on fine wire drawing machine, final acquisition diameter 0.016mm fine silver alloy bonding line, in drawing process, wire rod deformation rate is 6%, and die entrance angle is 13 °.
Embodiment three:
The manufacture method of fine silver billon bonding line is as follows:
(1) smelting and continuous casting: a. of silver alloy bonding line blank manufactures Ag/Ni intermediate alloy: putting in vacuum drying oven boron nitride crucible by the Ag of mass fraction 90% and the Ni layering of mass fraction 10%, the burner hearth evacuation to vacuum drying oven, vacuum is higher than 3.0 × 10-2After Pa, starting to warm up to 1850 DEG C, fusion process vacuum is higher than 3.0 × 10-2Pa, then stands 20 minutes, after Ag/Ni alloy is completely dissolved and molten metal change is limpid, is filled with Ar by boron nitride tube in Ag/Ni aluminium alloy2Stir 10 minutes, then alloy is poured in water cooling mold cooling, obtains Ag/Ni intermediate alloy；B. manufacturing Ag/Ce, Ag/La intermediate alloy: put into by the Ag of mass fraction 95% in vacuum drying oven graphite crucible, put into by Ce or La of mass fraction 5% in vacuum drying oven Feeding box, the burner hearth evacuation to vacuum drying oven, vacuum is higher than 3.0 × 10-2After Pa, it is filled with Ar2To 0.5Mpa, the most again it is evacuated to vacuum higher than 3.0 × 10-2After Pa, start to warm up, after temperature rises to 800 DEG C, stop evacuation and in vacuum drying oven, be filled with Ar2To 0.5MPa；Then proceeding to be warming up to 1250 DEG C, after silver is completely dissolved and silvering solution change is limpid, Ce or La is joined in crucible by mobile Feeding box, and rocks crucible stirring 10 minutes, then by alloy melt furnace cooling, obtains Ag/Ce, Ag/La excellent intermediate alloy；C. Ag/Ni intermediate alloy, Ag/Ce intermediate alloy, Ag/La intermediate alloy, Ag being weighed in following ratio in vacuum smelting furnace after calculating, wherein nickel (Ni) is 5wt%；Cerium (Ce) is 0.5 wt%；Lanthanum (La) is 0.5 wt%, and silver is that in surplus, and silver alloy, cerium (Ce) is identical with the mass fraction of lanthanum (La), is mixed to join in vacuum smelting furnace, is evacuated to 5.0 × 10-1More than Pa, starts to warm up, and after temperature rises to 800 DEG C, stops evacuation and is filled with Ar in vacuum smelting furnace2To 0.5MPa；Then proceed to be warming up to 1450 DEG C, after alloy is completely dissolved, in silver alloy liquid, be filled with Ar2Stir 10 minutes, alloy melt is cooled down, obtains silver alloy blank；D. being joined by silver alloy blank in vacuum melting electromagnetic agitation alloy conticaster crucible, crucible is boron nitride crucible, is evacuated to 5.0 × 10-1More than Pa, starts to warm up to 1450 DEG C, treats that alloy is completely dissolved, and uses boron nitride stirring rod to stir 15 minutes, after then refine stands 20 minutes, is filled with high-purity Ar2To 1.1MPa, begin with intermittent mode cast 12mm silver alloy bar；(2) drawing of silver alloy bar: the silver alloy bar of above-mentioned diameter 12mm is drawn into the silver alloy wire of a diameter of 1.5mm through wire drawing machine, drawing process uses unidirectional drawing；(3) intermediate heat-treatment of silver alloy wire: the silver alloy wire of straight 1.5mm carries out in tube furnace intermediate heat-treatment, heat treatment process uses N2Gas shield, heat treatment temperature is 750 DEG C, and heat treatment time is 2 minutes；(4) silver alloy wire through intermediate heat-treatment is drawn into through wire drawing machine the silver alloy wire of diameter 0.08mm, then the silver alloy wire of a diameter of 0.08mm is become a diameter of 0.05mm fine rule through wire drawing machine continuous drawing, again by multiple tracks drawing on fine wire drawing machine, final acquisition diameter 0.018mm fine silver alloy bonding line, in drawing process, wire rod deformation rate is 7%, and die entrance angle is 14 °.
As can be seen from the above table, the low radian LED encapsulation of the present invention can use by the silver alloy wire of fine bonding silver alloy wire and manufacture method thereof in ultralow radian LED encapsulates, disclosure satisfy that the requirement that low radian LED encapsulates, and this silver alloy wire and manufacture method thereof can draw the fine silver alloy wire rod of long length, it is possible to meet industrial production demand.
Claims (7)
1. the one kind little wafer LED encapsulation manufacture method of fine silver alloy bonding line, it is characterised in that: comprise the steps:
(1) smelting of silver alloy bonding line blank and continuous casting:
A. Ag/Ni intermediate alloy is manufactured: the Ag of mass fraction 90% and the Ni layering of mass fraction 10% are put in the boron nitride crucible of vacuum drying oven, and on crucible, place the boron nitride crucible lid of central aperture, burner hearth evacuation to vacuum drying oven, vacuum is higher than 3.0 × 10-2After Pa, starting to warm up to 1450-1850 DEG C, time wherein less than 800 DEG C, heating rate is 20-40 DEG C/min, and when temperature is higher than 800 DEG C, heating rate is 30-50 DEG C/min, and fusion process kind vacuum is higher than 3.0 × 10-2Pa, then stands 10-20 minute, after Ag/Ni alloy is completely dissolved and molten metal change is limpid, is filled with Ar by boron nitride tube in Ag/Ni aluminium alloy2Stir 5-10 minute, then alloy is poured in water cooling mold cooling, obtains Ag/Ni intermediate alloy；
B. manufacturing Ag/Ce and Ag/La intermediate alloy: put into by the Ag of mass fraction 90% in the graphite crucible of vacuum drying oven, put into by Ce or La of mass fraction 10% in the Feeding box of vacuum drying oven, the burner hearth evacuation to vacuum drying oven, vacuum is higher than 3.0 × 10-2After Pa, it is filled with Ar2To 0.1-0.5Mpa, the most again it is evacuated to vacuum higher than 3.0 × 10-2After Pa, start to warm up, after temperature rises to 400-600 DEG C, stop evacuation and in vacuum drying oven, be filled with Ar2To 0.1-0.5MPa；Then proceeding to be warming up to 1150-1250 DEG C, after silver is completely dissolved and silvering solution change is limpid, Ce or La is joined in crucible by mobile Feeding box, and rocks crucible stirring 5-10 minute, then by alloy melt furnace cooling, obtains Ag/Ce or Ag/La excellent intermediate alloy；Identical method is used to manufacture the another kind in Ag/Ce and Ag/La intermediate alloy；
C. Ag/Ni intermediate alloy, Ag/Ce intermediate alloy, Ag/La intermediate alloy, Ag being weighed in following ratio in vacuum smelting furnace after calculating, wherein nickel (Ni) is 3-5wt%；Cerium (Ce) is 0.5-1.0 wt%；Lanthanum (La) is 0.5-1.0 wt%, and silver is surplus, and wherein cerium (Ce) is identical with the mass fraction of lanthanum (La), is mixed to join in vacuum smelting furnace, is evacuated to 5.0 × 10-1More than Pa, starts to warm up, and after temperature rises to 600-800 DEG C, stops evacuation and is filled with Ar in vacuum smelting furnace2To 0.1-0.5MPa；Then proceed to be warming up to 1250-1450 DEG C, after alloy is completely dissolved, in silver alloy liquid, be filled with Ar2Stir 5-10 minute, alloy melt is cooled down, obtains silver alloy blank；
D. being joined by silver alloy blank in the crucible of vacuum melting electromagnetic agitation alloy conticaster, crucible is boron nitride crucible, is evacuated to 5.0 × 10-1More than Pa, starts to warm up to 1250-1450 DEG C, treats that alloy is completely dissolved, and uses boron nitride stirring rod to stir 10-15 minute, after then refine stands 15-20 minute, is filled with high-purity Ar2To 1.05-1.1MPa, begin with intermittent mode cast, form the silver alloy bar of a diameter of 8-12mm；
(2) drawing of silver alloy wire:
The silver alloy bar of above-mentioned a diameter of 8-12mm is drawn into the silver alloy wire of a diameter of 1.0-1.5mm through wire drawing machine, and drawing process uses unidirectional drawing；
(3) intermediate heat-treatment of silver alloy wire:
The silver alloy wire of diameter 1.0-1.5mm carries out in tube furnace intermediate heat-treatment, and heat treatment process uses noble gas or N2Gas shield, heat treatment temperature is 550-750 DEG C, and heat treatment time is 2-5 minute；
(4) silver alloy wire through intermediate heat-treatment is drawn into through wire drawing machine the silver alloy wire of diameter 0.06-0.08mm, then the silver alloy wire of a diameter of 0.06-0.08mm is become a diameter of 0.03-0.05mm fine rule through wire drawing machine continuous drawing, again by multiple tracks drawing on fine wire drawing machine, final acquisition diameter 0.012-0.018mm fine silver alloy bonding line, in drawing process, wire rod deformation rate is 5%-7%.
2. encapsulate by the manufacture method of fine silver alloy bonding line according to the little wafer LED described in claim 1, it is characterised in that: described melting Ag/Ni alloy crucible is boron nitride crucible, and stirring pipe is boron nitride tube.
3. encapsulate by the manufacture method of fine silver alloy bonding line according to the little wafer LED described in claim 1, it is characterised in that: the water cooling mold material of described cast Ag/Ni alloy is fine copper.
4. encapsulate by the manufacture method of fine silver alloy bonding line according to the little wafer LED described in claim 1, it is characterised in that: electromagnetic agitation mechanism is installed on the crystallizer of described conticaster；Silver billon bar traction uses batch (-type) traction, and hauling speed is 30-300mm/ minute, second pull-in time 1-5,1-5 second idle hours.
5. encapsulate by the manufacture method of fine silver alloy bonding line according to the little wafer LED described in claim 1, it is characterised in that: when described silver alloy shank diameter is more than 1.0-1.5mm, drawing process uses one way system draw, and drawing speed is 10-20m/ minute.
6. encapsulate by the manufacture method of fine silver alloy bonding line according to the little wafer LED described in claim 1, it is characterised in that: in described silver alloy wire pulling process, the inlet angle of wire-drawing die is 11 °-14 °.
7. use the little wafer LED fine silver alloy bonding line of encapsulation that the manufacture method of the little wafer LED fine silver alloy bonding line of encapsulation according to any one of claim 1-4 manufactures, it is characterized in that: each Ingredients Weight percentage composition of described silver alloy bonding line material is: Ni 3-5wt%, Ce 0.5-1.0wt%, La 0.5-1.0wt%, Ag surplus, and Ce with La mass fraction is identical.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108677044A (en) * | 2018-05-15 | 2018-10-19 | 雷山县弘悦银饰有限责任公司 | A kind of processing method of high intensity Silver Jewelry |
| CN111524811A (en) * | 2020-04-23 | 2020-08-11 | 江西森通新材料科技有限公司 | Graphene-gold bonding wire and preparation method and application thereof |
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| CN104353696A (en) * | 2014-10-10 | 2015-02-18 | 河南优克电子材料有限公司 | Manufacturing method for fine copper-silver alloy wires |
| CN104388861A (en) * | 2014-10-10 | 2015-03-04 | 河南理工大学 | Manufacturing method of fine silver-gold alloy bonding line for polycrystalline serial LED |
| CN105393343A (en) * | 2014-01-31 | 2016-03-09 | 大自达电线株式会社 | Wire bonding and method for producing same |
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| CN105393343A (en) * | 2014-01-31 | 2016-03-09 | 大自达电线株式会社 | Wire bonding and method for producing same |
| CN104353696A (en) * | 2014-10-10 | 2015-02-18 | 河南优克电子材料有限公司 | Manufacturing method for fine copper-silver alloy wires |
| CN104388861A (en) * | 2014-10-10 | 2015-03-04 | 河南理工大学 | Manufacturing method of fine silver-gold alloy bonding line for polycrystalline serial LED |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108677044A (en) * | 2018-05-15 | 2018-10-19 | 雷山县弘悦银饰有限责任公司 | A kind of processing method of high intensity Silver Jewelry |
| CN111524811A (en) * | 2020-04-23 | 2020-08-11 | 江西森通新材料科技有限公司 | Graphene-gold bonding wire and preparation method and application thereof |
| CN111524811B (en) * | 2020-04-23 | 2021-08-31 | 江西森通新材料科技有限公司 | Graphene-gold bonding wire and preparation method and application thereof |
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Denomination of invention: A Manufacturing Method for Micro Silver Alloy Bonding Wire for Small Chip LED Packaging Effective date of registration: 20230421 Granted publication date: 20180420 Pledgee: Bank of China Limited by Share Ltd. Jiyuan branch Pledgor: HENAN YOUK ELECTRONIC MATERIALS Co.,Ltd. Registration number: Y2023980038611 |