CN105950895B - A kind of manufacture method of the fine silver alloy bonding line of small chip LED encapsulation - Google Patents

A kind of manufacture method of the fine silver alloy bonding line of small chip LED encapsulation Download PDF

Info

Publication number
CN105950895B
CN105950895B CN201610293480.4A CN201610293480A CN105950895B CN 105950895 B CN105950895 B CN 105950895B CN 201610293480 A CN201610293480 A CN 201610293480A CN 105950895 B CN105950895 B CN 105950895B
Authority
CN
China
Prior art keywords
silver alloy
wire
alloy
silver
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610293480.4A
Other languages
Chinese (zh)
Other versions
CN105950895A (en
Inventor
李科
曹军
汤争争
吕长春
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HENAN YOUK ELECTRONIC MATERIALS CO Ltd
Original Assignee
HENAN YOUK ELECTRONIC MATERIALS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HENAN YOUK ELECTRONIC MATERIALS CO Ltd filed Critical HENAN YOUK ELECTRONIC MATERIALS CO Ltd
Priority to CN201610293480.4A priority Critical patent/CN105950895B/en
Publication of CN105950895A publication Critical patent/CN105950895A/en
Application granted granted Critical
Publication of CN105950895B publication Critical patent/CN105950895B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/02Making non-ferrous alloys by melting
    • C22C1/03Making non-ferrous alloys by melting using master alloys
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/06Alloys based on silver
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/02Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Metal Extraction Processes (AREA)

Abstract

The invention discloses a kind of small chip LED encapsulation manufacture method of fine silver alloy bonding line, include the following steps:The smelting of 1 silver alloy bonding line blank and continuous casting:The drawing of 2 silver alloy wires:The intermediate heat-treatment of 3 silver alloy wires:4 are drawn into the silver alloy wire Jing Guo intermediate heat-treatment through wire drawing machine the silver alloy wire of 0.06 0.08mm of diameter.The present invention eliminates the defects of bonding silver wire and other bonding silver alloy wire intensity are low, antioxygenic property is poor by optimized alloy component, and effectively reduces cost.Vibration continuous casting technology is had children outside the state plan by using vacuum melting, improve alloy property, improve alloy uniformity, obtain high-quality alloy wire blank, and the institutional framework of alloy in process is controlled by appropriate intermediate heat-treatment, reduce the stress raisers in wire drawing, one-step optimization wire-drawing die inlet angle of going forward side by side, reduce the broken string in drawing process, it is ensured that fine to be bonded silver alloy wire yield rate.

Description

A kind of manufacture method of the fine silver alloy bonding line of small chip LED encapsulation
Technical field
The invention belongs to technical field of semiconductor, relates generally to a kind of small chip LED encapsulation and is closed with fine bonding silver Gold thread and its manufacture method.
Background technology
Bonding wire plays bringing-out of connection silicon chip electrode and lead frame, and transmits the telecommunications of chip Number, distribute the heat produced in chip, be the critical material of integrated antenna package.Wire bonding is the minimum spy of semiconductor production The concentrated reflection of size and maximum output is levied, the former is shown as in the lead spacing that constantly reduces, and the latter is then embodied in and progressively carries In high production efficiency.Thin space is bonded the line for needing strength and stiffness higher, by no air soldered ball(Free Air Ball)And the control of heat affected area (Heat Affect Zone) length is being collected on a large scale with meeting the needs of thin space bonding The technical indicator of para-linkage line proposes increasingly higher demands into circuit and LED encapsulation, and high-performance, ultra-fine bonding line need The amount of asking increases rapidly, while the continuous improvement of chip density, and the reliability of para-linkage material proposes the requirement bonding line of higher (It is bonded gold thread, linking copper wire, bonding alloy line etc.)Play bringing-out of connection silicon chip electrode and lead frame, And transmit the electric signal of chip, distribute the interior heat produced of chip, it is the critical material of integrated antenna package.It is bonded silver wire and key Silver alloy wire is closed due to its outstanding electric property(Device high-frequency noise can be reduced, reduce great power LED caloric value etc.), it is good Good stability and appropriate cost factor, start to be applied in microelectronics Packaging, especially in LED encapsulation.But for fine silver For line, the problem of being primarily present the following aspects:1)N is not used during Ag line bondings2+H2Gas shield(Cu is bonded Line uses N in use2+H2Gas shield, cost is higher and there are security risk), the parameter window in bonding process Scope is smaller, due to reasons such as thermal conductivity height, oxidation rate height, easily leads to the uneven easily formation of Free Air Ball solidifications The defects of golf, bulb come to a point, wave ball, influences the first Joint Strength and shape, reduces device yield and reliable Property;2)Ag line elevated temperature strengths are low, and the probability that fails under hot conditions is higher, can not meet the use of the devices such as great power LED;3) Ag/Al interfaces are welded under harsh conditions to be easy to produce Ag ion electromigration, are caused Joint Strength to decline and then are influenced the device longevity Life.For being bonded silver alloy wire, mostly at present is the alloy by adding the elements such as Pd, Au, such silver alloy has good property Can, can meet the needs of part LED encapsulation, but such silver alloy there are problems that following aspects:1)Due to Au and Pd with Ag can be with infinitely dissolve, and alloy strength increase is limited after Au and Pd elements are added in Ag, and for small chip LED, its pad Size is smaller, is usually 40*40um, it is necessary to ultra-fine(Line footpath is 0.012-0.016mm)Bonding wire connects, and this requires bonding Silver alloy wire has enough bonding strengths, and thus, the silver alloy wire of addition Au and Pd cannot meet wanting for small chip LED encapsulation Ask;2)After adding Au and Pd in fine silver, since its atomic arrangement mode and atomic radius are similar, alloying element is anti-oxidant to silver Performance improves limited so that parameter area is smaller in bonding process, causes the reduction of its production efficiency;3)Your gold Au and Pd is Belong to, considerably increase the cost of bonding silver alloy wire.The addition of Ni elements and rare earth element can effectively improve silver alloy Intensity, the antioxygenic property and high-temperature stability for improving silver.Further, since small chip LED encapsulation bonding silver alloy wire line footpath It is thinner(Line footpath is 0.012-0.016mm), for micro-fine wire processing, the compactness and uniformity of raw material are that influence is micro- The key of thin wire drawing, the intermediate heat-treatment and wire-drawing die of drawing process are an important factor for influencing micro-fine wire processing.Therefore, Optimize the component of silver alloy bonding line, improve the intensity and corrosion resistance of silver alloy bonding line, shaken by vacuum melting excusing from death Dynamic continuous casting technology ensures that silver alloy tissue and performance are consistent, using appropriate intermediate heat-treatment and optimize wire-drawing die inlet angle, Fine silver alloy wire manufacture method is improved, is of great significance for accelerating application of the silver alloy wire in small chip LED encapsulation.
The content of the invention
It is an object of the invention to provide a kind of small chip LED encapsulation to be bonded silver alloy wire and its manufacture method with fine, It can solve the shortcomings that existing bonding silver alloy wire, meet the requirement of small chip LED encapsulation.
For this reason, the present invention provides following technical solution:A kind of small chip LED encapsulation fine bonding silver alloy wire and its system Method is made, is included the following steps:(1)The smelting of silver alloy bonding line blank and continuous casting:A. Ag/Ni intermediate alloys are manufactured:By matter The Ni layerings for measuring the Ag and mass fraction 10% of fraction 90% are put into vacuum drying oven boron nitride crucible, and the burner hearth of vacuum drying oven is taken out very Sky, vacuum are higher than 3.0 × 10-2After Pa, start to warm up to 1450-1850 DEG C, fusion process vacuum is higher than 5 × 10-2Pa, Then 10-20 minute are stood, after Ag/Ni alloys melt completely and molten metal change is limpid, by boron nitride tube to Ag/Ni alloys Ar is filled with liquid to stir 5-10 minutes, and then alloy is poured into water cooling mold and is cooled down, obtains Ag/Ni intermediate alloys;B. make Make Ag/Ce, Ag/La intermediate alloy:The Ag of mass fraction 95% is put into vacuum drying oven graphite crucible, by the Ce of mass fraction 5% Or La is put into vacuum drying oven Feeding box, the burner hearth of vacuum drying oven is vacuumized, vacuum is higher than 3.0 × 10-2After Pa, Ar is filled with extremely 0.1-0.5Mpa, is then evacuated to vacuum higher than 3.0 × 10 again-2After Pa, start to warm up, treat that temperature rises to 600-800 After DEG C, stopping vacuumizes and Ar is filled with into vacuum drying oven to 0.1-0.5MPa;Then proceed to be warming up to 1150-1250 DEG C, treat silver After melting and silvering solution become limpid completely, Ce or La are added in crucible by mobile Feeding box, and into g/Ce, Ag/La aluminium alloy It is filled with Ar to stir 5-10 minutes, then alloy melt is cooled down, obtains Ag/Ce, Ag/La excellent intermediate alloy;C. in vacuum smelting After Ag/Ni intermediate alloys, Ag/Ce intermediate alloys, Ag/La intermediate alloys, Ag are weighed calculating in following ratios in furnace, wherein Nickel(Ni)For 3-5wt%;Cerium(Ce)For 0.3-0.5 wt%;Lanthanum(La)For 0.3-0.5 wt%, silver is surplus, and cerium in silver alloy (Ce)And lanthanum(La)Mass fraction it is identical, be mixed to join in vacuum smelting furnace, be evacuated to 6.0 × 10-1More than Pa, starts Heating, after temperature rises to 600-800 DEG C, stopping vacuumizes and Ar is filled with into vacuum smelting furnace to 0.1-0.5MPa;Then 1250-1450 DEG C is continuously heating to, after alloy melts completely, Ar is filled with into silver alloy liquid and is stirred 5-10 minutes, by alloy Melt cooling, obtains silver alloy blank;D. silver alloy blank is added in vacuum melting electromagnetic agitation alloy conticaster crucible, Crucible is boron nitride crucible, is evacuated to 6.0 × 10-1More than Pa, starts to warm up to 1250-1450 DEG C, treats that alloy melts completely, Stirred 10-15 minutes using boron nitride stirring rod, after then refining stands 10-15 minutes, be filled with high-purity Ar to 1.05MPa- 1.1MPa, starts to use intermittent mode cast 8-12mm silver alloy bars;(2)The drawing of silver alloy bar:By above-mentioned diameter 8-12mm Silver alloy bar be drawn into the silver alloy wire of a diameter of 1.0-1.5mm by wire drawing machine, drawing process is drawn using unidirectional;(3) The intermediate heat-treatment of silver alloy wire:The silver alloy wire of diameter 1.0-1.5mm is subjected to intermediate heat-treatment in tube furnace, is heat-treated Process uses inert gas or N2Gas shield, heat treatment temperature are 550-750 DEG C, and heat treatment time is 2-5 minutes;(4)Will Silver alloy wire by intermediate heat-treatment is drawn into the silver alloy wire of diameter 0.06-0.08mm through wire drawing machine, then will be a diameter of The silver alloy wire of 0.06-0.08mm passes through wire drawing machine continuous drawing into a diameter of 0.03-0.05mm filaments, then in fine drawing It is final to obtain the fine silver alloy bonding lines of diameter 0.012-0.018mm by multiple tracks drawing on silk machine, in drawing process, wire rod Deformation rate is 5%-7%.
Further, the water cooling mold material of the cast Ag/Ni alloys is fine copper.
Further, electromagnetic agitation mechanism is installed on the crystallizer of the conticaster;Silver-colored billon bar traction uses Intermittent traction, hauling speed are 50-300mm/ minutes, pull-in time 1-5 second, idle hours 1-5 second.
Yet further, when the silver alloy shank diameter is more than 1.0-1.5mm, drawn in drawing process using one way system System, and drawing speed is 10-20m/ minutes.
Again further, in the silver alloy wire pulling process, the inlet angle of wire-drawing die is 11 ° -14 °.
In addition, the present invention also provides a kind of manufacturer with the small chip LED encapsulation with fine bonding silver alloy wire The fine bonding silver alloy wire of small chip LED encapsulation of method manufacture, each Ingredients Weight percentage of silver alloy bonding wire material contain Amount is:Ni 3-5wt%, Ce 0.3-0.5wt%, La 0.3-0.5wt%, Ag surpluses, and Ce with La mass fractions are identical.
The small chip LED that small chip LED encapsulation of the present invention is manufactured with the manufacture method of fine bonding silver alloy wire The fine bonding silver alloy wire of encapsulation, bonding silver wire and other bonding silver alloy wire intensity are eliminated by optimized alloy component Low, the defects of antioxygenic property is poor, and effectively reduce cost.Vibration continuous casting technology is had children outside the state plan by using vacuum melting, is improved Alloy property, improves alloy uniformity, obtains high-quality alloy wire blank, and by the control of appropriate intermediate heat-treatment plus The institutional framework of alloy during work, the stress raisers in reduction wire drawing, one-step optimization wire-drawing die inlet angle of going forward side by side, Reduce the broken string in drawing process, it is ensured that fine to be bonded silver alloy wire yield rate.
Embodiment
Embodiment one:
The manufacture method of fine bonding silver alloy bonding line is as follows:
(1)The smelting of silver alloy bonding line blank and continuous casting:A. Ag/Ni intermediate alloys are manufactured:By the Ag of mass fraction 90% Ni layerings with mass fraction 10% are put into vacuum drying oven boron nitride crucible, the burner hearth of vacuum drying oven are vacuumized, vacuum is higher than 3.0×10-2After Pa, start to warm up to 1450 DEG C, fusion process vacuum is higher than 3.0 × 10-2Pa, then stands 10 minutes, treats After the melting completely of Ag/Ni alloys and molten metal becomes limpid, Ar is filled with into Ag/Ni aluminium alloys by boron nitride tube and is stirred 5 minutes, Then alloy is poured into water cooling mold and cooled down, obtain Ag/Ni intermediate alloys;B. Ag/Ce, Ag/La intermediate alloy are manufactured: The Ag of mass fraction 95% is put into vacuum drying oven graphite crucible, the Ce of mass fraction 5% or La are put into vacuum drying oven Feeding box, The burner hearth of vacuum drying oven is vacuumized, vacuum is higher than 3.0 × 10-2After Pa, Ar to 0.1Mpa is filled with, is then evacuated to again true Reciprocal of duty cycle is higher than 3.0 × 10-2After Pa, start to warm up, after temperature rises to 600 DEG C, stopping vacuumizes and Ar is filled with into vacuum drying oven To 0.1MPa;Then proceed to be warming up to 1150 DEG C, after silver-colored melting completely and silvering solution become limpid, mobile Feeding box adds Ce or La Enter into crucible, and rock crucible and stir 5 minutes, then by alloy melt furnace cooling, obtain among Ag/Ce, Ag/La alloy Alloy;C. in vacuum smelting furnace by Ag/Ni intermediate alloys, Ag/Ce intermediate alloys, Ag/La intermediate alloys, Ag in following ratios Weigh after calculating, wherein nickel(Ni)For 3wt%;Cerium(Ce)For 0.3wt%;Lanthanum(La)For 0.3 wt%, silver is surplus, and silver alloy Middle cerium(Ce)And lanthanum(La)Mass fraction it is identical, be mixed to join in vacuum smelting furnace, be evacuated to 5.0 × 10-1More than Pa, Start to warm up, after temperature rises to 600 DEG C, stopping vacuumizes and Ar is filled with into vacuum smelting furnace to 0.1MPa;Then proceed to 1250 DEG C are warming up to, after alloy melts completely, Ar is filled with into silver alloy liquid and is stirred 5 minutes, alloy melt is cooled down, is obtained Silver alloy blank;D. silver alloy blank is added in vacuum melting electromagnetic agitation alloy conticaster crucible, crucible is boron nitride Crucible, is evacuated to 5.0 × 10-1More than Pa, starts to warm up to 1250 DEG C, treats that alloy melts completely, using boron nitride stirring rod Stirring 10 minutes, after then refining stands 15 minutes, is filled with high-purity Ar to 1.05MPa, starts using intermittent mode cast 8mm silver Rod of metal alloy;
(2)The drawing of silver alloy bar:The silver alloy bar of above-mentioned diameter 8mm is drawn into a diameter of 1.0mm by wire drawing machine Silver alloy wire, drawing process drawn using unidirectional;(3)The intermediate heat-treatment of silver alloy wire:By the silver alloy wire of diameter 1.0mm Intermediate heat-treatment is carried out in tube furnace, heat treatment process uses N2Gas shield, heat treatment temperature is 550 DEG C, during heat treatment Between be 5 minutes;(4)Silver alloy wire Jing Guo intermediate heat-treatment is drawn into the silver alloy wire of diameter 0.06mm through wire drawing machine, so The silver alloy wire of a diameter of 0.06mm is passed through into wire drawing machine continuous drawing into a diameter of 0.03mm filaments afterwards, then in fine drawing It is final to obtain the fine silver alloy bonding lines of diameter 0.012mm by multiple tracks drawing on silk machine, in drawing process, wire rod deformation rate For 5%, die entrance angle is 11 °.
Embodiment two:
The manufacture method of fine silver billon bonding line is as follows:
(1)The smelting of silver alloy bonding line blank and continuous casting:A. Ag/Ni intermediate alloys are manufactured:By the Ag of mass fraction 90% Ni layerings with mass fraction 10% are put into vacuum drying oven boron nitride crucible, the burner hearth of vacuum drying oven are vacuumized, vacuum is higher than 3.0×10-2After Pa, start to warm up to 1650 DEG C, fusion process vacuum is higher than 3.0 × 10-2Pa, then stands 15 minutes, treats After the melting completely of Ag/Ni alloys and molten metal becomes limpid, Ar is filled with into Ag/Ni aluminium alloys by boron nitride tube and is stirred 8 minutes, Then alloy is poured into water cooling mold and cooled down, obtain Ag/Ni intermediate alloys;B. Ag/Ce, Ag/La intermediate alloy are manufactured: The Ag of mass fraction 95% is put into vacuum drying oven graphite crucible, the Ce of mass fraction 5% or La are put into vacuum drying oven Feeding box, The burner hearth of vacuum drying oven is vacuumized, vacuum is higher than 3.0 × 10-2After Pa, Ar to 0.3Mpa is filled with, is then evacuated to again true Reciprocal of duty cycle is higher than 3.0 × 10-2After Pa, start to warm up, after temperature rises to 700 DEG C, stopping vacuumizes and Ar is filled with into vacuum drying oven To 0.3MPa;Then proceed to be warming up to 1200 DEG C, after silver-colored melting completely and silvering solution become limpid, mobile Feeding box adds Ce or La Enter into crucible, and rock crucible and stir 8 minutes, then by alloy melt furnace cooling, obtain among Ag/Ce, Ag/La alloy Alloy;C. in vacuum smelting furnace by Ag/Ni intermediate alloys, Ag/Ce intermediate alloys, Ag/La intermediate alloys, Ag in following ratios Weigh after calculating, wherein nickel(Ni)For 4wt%;Cerium(Ce)For 0.4wt%;Lanthanum(La)For 0.4 wt%, silver is surplus, and silver alloy Middle cerium(Ce)And lanthanum(La)Mass fraction it is identical, be mixed to join in vacuum smelting furnace, be evacuated to 5.0 × 10-1More than Pa, Start to warm up, after temperature rises to 700 DEG C, stopping vacuumizes and Ar is filled with into vacuum smelting furnace to 0.3MPa;Then proceed to 1350 DEG C are warming up to, after alloy melts completely, Ar is filled with into silver alloy liquid and is stirred 8 minutes, alloy melt is cooled down, is obtained Silver alloy blank;D. silver alloy blank is added in vacuum melting electromagnetic agitation alloy conticaster crucible, crucible is boron nitride Crucible, is evacuated to 5.0 × 10-1More than Pa, starts to warm up to 1350 DEG C, treats that alloy melts completely, using boron nitride stirring rod Stirring 12 minutes, after then refining stands 18 minutes, is filled with high-purity Ar to 1.07MPa, starts to use intermittent mode cast 10mm Silver alloy bar;
(2)The drawing of silver alloy bar:The silver alloy bar of above-mentioned diameter 10mm is drawn into by wire drawing machine a diameter of The silver alloy wire of 1.2mm, drawing process are drawn using unidirectional;(3)The intermediate heat-treatment of silver alloy wire:By the silver of diameter 1.2mm Alloy wire carries out intermediate heat-treatment in tube furnace, and heat treatment process is protected using inert gas Ar, heat treatment temperature 650 DEG C, heat treatment time is 4 minutes;(4)Silver alloy wire Jing Guo intermediate heat-treatment is drawn into diameter 0.07mm's through wire drawing machine Silver alloy wire, then by the silver alloy wire of a diameter of 0.07mm by wire drawing machine continuous drawing into a diameter of 0.04mm filaments, It is final to obtain the fine silver alloy bonding lines of diameter 0.016mm again on fine wire drawing machine by multiple tracks drawing, in drawing process, Wire rod deformation rate is 6%, and die entrance angle is 13 °
Embodiment three:
The manufacture method of fine silver billon bonding line is as follows:
(1)The smelting of silver alloy bonding line blank and continuous casting:A. Ag/Ni intermediate alloys are manufactured:By the Ag of mass fraction 90% Ni layerings with mass fraction 10% are put into vacuum drying oven boron nitride crucible, the burner hearth of vacuum drying oven are vacuumized, vacuum is higher than 3.0×10-2After Pa, start to warm up to 1850 DEG C, fusion process vacuum is higher than 3.0 × 10-2Pa, then stands 20 minutes, treats After the melting completely of Ag/Ni alloys and molten metal become limpid, Ar is filled with into Ag/Ni aluminium alloys by boron nitride tube and stirs 10 points Alloy, is then poured into water cooling mold and cools down by clock, obtains Ag/Ni intermediate alloys;B. manufacture among Ag/Ce, Ag/La and close Gold:The Ag of mass fraction 95% is put into vacuum drying oven graphite crucible, the Ce of mass fraction 5% or La are put into vacuum drying oven Feeding box In, the burner hearth of vacuum drying oven is vacuumized, vacuum is higher than 3.0 × 10-2After Pa, Ar to 0.5Mpa is filled with, is then vacuumized again It is higher than 3.0 × 10 to vacuum-2After Pa, start to warm up, after temperature rises to 800 DEG C, stopping is vacuumized and filled into vacuum drying oven Enter Ar to 0.5MPa;Then proceed to be warming up to 1250 DEG C, melted completely and after silvering solution becomes limpid after silver-colored, mobile Feeding box by Ce or La is added in crucible, and is rocked crucible and stirred 10 minutes, then by alloy melt furnace cooling, obtains Ag/Ce, Ag/La conjunction Golden intermediate alloy;C. Ag/Ni intermediate alloys, Ag/Ce intermediate alloys, Ag/La intermediate alloys, Ag are pressed in vacuum smelting furnace State after ratio weighs and calculate, wherein nickel(Ni)For 5wt%;Cerium(Ce)For 0.5 wt%;Lanthanum(La)For 0.5 wt%, silver is surplus, and Cerium in silver alloy(Ce)And lanthanum(La)Mass fraction it is identical, be mixed to join in vacuum smelting furnace, be evacuated to 5.0 × 10- 1More than Pa, starts to warm up, and after temperature rises to 800 DEG C, stopping vacuumizes and Ar is filled with into vacuum smelting furnace to 0.5MPa; Then proceed to be warming up to 1450 DEG C, after alloy melts completely, Ar is filled with into silver alloy liquid and is stirred 10 minutes, by alloy melt Cooling, obtains silver alloy blank;D. silver alloy blank is added in vacuum melting electromagnetic agitation alloy conticaster crucible, crucible For boron nitride crucible, 5.0 × 10 are evacuated to-1More than Pa, starts to warm up to 1450 DEG C, treats that alloy melts completely, using nitridation Boron stirring rod stirs 15 minutes, and then refining is stood after twenty minutes, is filled with high-purity Ar to 1.1MPa, starts to draw using intermittent mode Cast 12mm silver alloy bars;(2)The drawing of silver alloy bar:The silver alloy bar of above-mentioned diameter 12mm is drawn into directly by wire drawing machine Footpath is the silver alloy wire of 1.5mm, and drawing process is drawn using unidirectional;(3)The intermediate heat-treatment of silver alloy wire:By straight 1.5mm's Silver alloy wire carries out intermediate heat-treatment in tube furnace, and heat treatment process uses N2Gas shield, heat treatment temperature are 750 DEG C, Heat treatment time is 2 minutes;(4)Silver alloy wire Jing Guo intermediate heat-treatment is drawn into the silver of diameter 0.08mm through wire drawing machine Alloy wire, then passes through wire drawing machine continuous drawing into a diameter of 0.05mm filaments by the silver alloy wire of a diameter of 0.08mm, then It is final to obtain the fine silver alloy bonding lines of diameter 0.018mm by multiple tracks drawing on fine wire drawing machine, in drawing process, line Material deformation rate is 7%, and die entrance angle is 14 °.
As can be seen from the above table, fine silver alloy wire and its manufacture method of being bonded of low radian LED encapsulation of the invention Silver alloy wire can use in ultralow radian LED encapsulation, disclosure satisfy that the requirement of low radian LED encapsulation, and the silver alloy wire And its manufacture method can draw the fine silver alloy wire rod of long length, disclosure satisfy that industrial production demand.

Claims (3)

  1. A kind of 1. manufacture method of the fine silver alloy bonding line of small chip LED encapsulation, it is characterised in that:Include the following steps:
    (1)The smelting of silver alloy bonding line blank and continuous casting:
    A. Ag/Ni intermediate alloys are manufactured:The Ni of the Ag of mass fraction 90% and mass fraction 10% layerings are put into the nitrogen of vacuum drying oven Change in boron crucible, and the boron nitride crucible lid of middle perforate is placed on crucible, the burner hearth of vacuum drying oven is vacuumized, vacuum is high In 3.0 × 10-2After Pa, start to warm up to 1450-1850 DEG C, wherein heating rate is 20-40 DEG C/min during less than 800 DEG C, temperature Heating rate be 30-50 DEG C/min when degree is higher than 800 DEG C, and vacuum is higher than 3.0 × 10 in fusion process-2Pa, then stands 10- 20 minutes, after Ag/Ni alloys melt completely and molten metal becomes limpid, Ar is filled with into Ag/Ni aluminium alloys by boron nitride tube Alloy, is then poured into water cooling mold and cools down, obtain Ag/Ni intermediate alloys by stirring 5-10 minutes;
    B. Ag/Ce and Ag/La intermediate alloys are manufactured:The Ag of mass fraction 90% is put into the graphite crucible of vacuum drying oven, by quality The Ce or La of fraction 10% are put into the Feeding box of vacuum drying oven, and the burner hearth of vacuum drying oven is vacuumized, and vacuum is higher than 3.0 × 10-2Pa Afterwards, Ar to 0.1-0.5MPa is filled with, is then evacuated to vacuum again higher than 3.0 × 10-2After Pa, start to warm up, treat temperature After rising to 400-600 DEG C, stopping vacuumizes and Ar is filled with into vacuum drying oven to 0.1-0.5MPa;Then proceed to be warming up to 1150- 1250 DEG C, after silver-colored melting completely and silvering solution become limpid, Ce or La are added in crucible by mobile Feeding box, and are rocked crucible and stirred Mix 5-10 minutes, then by alloy melt furnace cooling, obtain Ag/Ce or Ag/La excellent intermediate alloys;Using identical method Manufacture the another kind in Ag/Ce and Ag/La intermediate alloys;
    C. in vacuum smelting furnace by Ag/Ni intermediate alloys, Ag/Ce intermediate alloys, Ag/La intermediate alloys, Ag in following ratios Weigh after calculating, wherein nickel(Ni)For 3-5wt%;Cerium(Ce)For 0.5-1.0 wt%;Lanthanum(La)For 0.5-1.0 wt%, silver is remaining Amount, and wherein cerium(Ce)And lanthanum(La)Mass fraction it is identical, be mixed to join in vacuum smelting furnace, be evacuated to 5.0 × 10- 1More than Pa, starts to warm up, and after temperature rises to 600-800 DEG C, stopping vacuumizes and Ar is filled with into vacuum smelting furnace to 0.1- 0.5MPa;Then proceed to be warming up to 1250-1450 DEG C, after alloy melts completely, Ar stirrings 5-10 is filled with into silver alloy liquid Minute, alloy melt is cooled down, obtains silver alloy blank;
    D. silver alloy blank being added in the crucible of vacuum melting electromagnetic agitation alloy conticaster, crucible is boron nitride crucible, It is evacuated to 5.0 × 10-1More than Pa, starts to warm up to 1250-1450 DEG C, treats that alloy melts completely, using boron nitride stirring rod Stirring 10-15 minutes, after then refining stands 15-20 minutes, is filled with high-purity Ar to 1.05-1.1MPa, starts to use interval side Formula cast, forms the silver alloy bar of a diameter of 8-12mm;
    (2)The drawing of silver alloy wire:
    The silver alloy bar of above-mentioned a diameter of 8-12mm is drawn into the silver alloy wire of a diameter of 1.0-1.5mm by wire drawing machine, Drawing process is drawn using unidirectional;
    (3)The intermediate heat-treatment of silver alloy wire:
    The silver alloy wire of diameter 1.0-1.5mm is subjected to intermediate heat-treatment in tube furnace, heat treatment process uses inert gas Or N2Gas shield, heat treatment temperature are 550-750 DEG C, and heat treatment time is 2-5 minutes;
    (4)Silver alloy wire Jing Guo intermediate heat-treatment is drawn into the silver alloy wire of diameter 0.06-0.08mm through wire drawing machine, so Afterwards by the silver alloy wire of a diameter of 0.06-0.08mm by wire drawing machine continuous drawing into a diameter of 0.03-0.05mm filaments, It is final to obtain the fine silver alloy bonding lines of diameter 0.012-0.018mm, wire drawing again by multiple tracks drawing on fine wire drawing machine During, wire rod deformation rate is 5%-7%;Electromagnetic agitation mechanism is installed on the crystallizer of the conticaster;Silver-colored billon bar is led Draw using intermittent traction, hauling speed is 30-300mm/ minutes, pull-in time 1-5 second, idle hours 1-5 second;The silver closes In gold thread pulling process, the inlet angle of wire-drawing die is 11 ° -14 °.
  2. 2. the manufacture method of the fine silver alloy bonding line of small chip LED encapsulation according to claim 1, its feature exist In:The water cooling mold material of the cast Ag/Ni alloys is fine copper.
  3. 3. manufactured using the small chip LED encapsulation described in claim 1 or 2 with the manufacture method of fine silver alloy bonding line small The fine silver alloy bonding line of chip LED encapsulation, it is characterised in that:Each Ingredients Weight percentage of the silver alloy bonding wire material Content is:Ni 3-5wt%, Ce 0.5-1.0wt%, La 0.5-1.0wt%, Ag surpluses, and Ce with La mass fractions are identical.
CN201610293480.4A 2016-05-06 2016-05-06 A kind of manufacture method of the fine silver alloy bonding line of small chip LED encapsulation Active CN105950895B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610293480.4A CN105950895B (en) 2016-05-06 2016-05-06 A kind of manufacture method of the fine silver alloy bonding line of small chip LED encapsulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610293480.4A CN105950895B (en) 2016-05-06 2016-05-06 A kind of manufacture method of the fine silver alloy bonding line of small chip LED encapsulation

Publications (2)

Publication Number Publication Date
CN105950895A CN105950895A (en) 2016-09-21
CN105950895B true CN105950895B (en) 2018-04-20

Family

ID=56914034

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610293480.4A Active CN105950895B (en) 2016-05-06 2016-05-06 A kind of manufacture method of the fine silver alloy bonding line of small chip LED encapsulation

Country Status (1)

Country Link
CN (1) CN105950895B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108677044A (en) * 2018-05-15 2018-10-19 雷山县弘悦银饰有限责任公司 A kind of processing method of high intensity Silver Jewelry
CN111524811B (en) * 2020-04-23 2021-08-31 江西森通新材料科技有限公司 Graphene-gold bonding wire and preparation method and application thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104353696A (en) * 2014-10-10 2015-02-18 河南优克电子材料有限公司 Manufacturing method for fine copper-silver alloy wires
CN104388861A (en) * 2014-10-10 2015-03-04 河南理工大学 Manufacturing method of fine silver-gold alloy bonding line for polycrystalline serial LED
CN105393343A (en) * 2014-01-31 2016-03-09 大自达电线株式会社 Wire bonding and method for producing same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105393343A (en) * 2014-01-31 2016-03-09 大自达电线株式会社 Wire bonding and method for producing same
CN104353696A (en) * 2014-10-10 2015-02-18 河南优克电子材料有限公司 Manufacturing method for fine copper-silver alloy wires
CN104388861A (en) * 2014-10-10 2015-03-04 河南理工大学 Manufacturing method of fine silver-gold alloy bonding line for polycrystalline serial LED

Also Published As

Publication number Publication date
CN105950895A (en) 2016-09-21

Similar Documents

Publication Publication Date Title
CN102776405B (en) Preparation method of bonded gold-silver alloy wire
CN104388861B (en) A kind of polycrystalline series LED manufacture method of fine silver billon bonding line
CN103194637B (en) Bonding alloy filamentary silver and preparation method thereof
CN109338176A (en) A kind of high intensity high thermal conductivity cast aluminium alloy gold and preparation method thereof
CN107799496B (en) High-reliability copper alloy bonding wire for electronic packaging and preparation method thereof
CN102114584B (en) Preparation method for AuSn20 alloy brazing filler metal used for packaging integrated circuit and usage thereof
CN106011516B (en) One kind doping billon bonding wire and its subzero treatment preparation method
CN105950895B (en) A kind of manufacture method of the fine silver alloy bonding line of small chip LED encapsulation
CN104308124A (en) High-strength gold clad copper composite wire and preparation method thereof
CN106381458A (en) Amorphous alloy strengthening method based on limited high-pressure torsion
CN115148419B (en) High-conductivity antioxidant microalloyed copper alloy bonding wire and preparation method thereof
CN108315581A (en) A kind of low beryllium content copper alloy and preparation method thereof of high intensity high softening temperature
CN105925831A (en) Production method of high-strength silver alloy bonding wire for encapsulating low-radian LEDs
CN105950900B (en) The manufacture method of the small chip LED encapsulation fine silver alloy bonding line of high intensity
CN106392371A (en) Medium-temperature alloy solder thin strap and preparation method
CN107630150B (en) A kind of preparation method of the enhanced CuNiSi alloy of timeliness
CN109599381A (en) A kind of fixed proportion auri/silver-based bonding line and preparation method thereof
CN106811617A (en) A kind of preparation method for being bonded electrum
CN105950899A (en) Manufacturing method of micro-fine silver alloy bonding wire for low-radian LED packaging
CN104752235A (en) Copper palladium silver alloy high-precision superfine bonding wire manufacturing method
CN110783299A (en) Copper micro-alloy single crystal bonding wire and preparation method thereof
CN108118176A (en) A kind of high-speed railway contact line cu-based amorphous alloys and its preparation process
CN109055800A (en) A kind of bonding gold thread and preparation method thereof
CN109207788A (en) A kind of high-strength tenacity, low-resistivity silver-colored billon bonding wire preparation method
CN108504904A (en) A kind of high-strength temperature-resistant cond aluminium silk and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: A Manufacturing Method for Micro Silver Alloy Bonding Wire for Small Chip LED Packaging

Effective date of registration: 20230421

Granted publication date: 20180420

Pledgee: Bank of China Limited by Share Ltd. Jiyuan branch

Pledgor: HENAN YOUK ELECTRONIC MATERIALS Co.,Ltd.

Registration number: Y2023980038611

PE01 Entry into force of the registration of the contract for pledge of patent right