CN105932134B - 发光器件封装和包括该发光器件封装的照明设备 - Google Patents

发光器件封装和包括该发光器件封装的照明设备 Download PDF

Info

Publication number
CN105932134B
CN105932134B CN201610109347.9A CN201610109347A CN105932134B CN 105932134 B CN105932134 B CN 105932134B CN 201610109347 A CN201610109347 A CN 201610109347A CN 105932134 B CN105932134 B CN 105932134B
Authority
CN
China
Prior art keywords
light emitting
layer
electrode
emitting device
device package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610109347.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN105932134A (zh
Inventor
丁星好
任范镇
李尚烈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN105932134A publication Critical patent/CN105932134A/zh
Application granted granted Critical
Publication of CN105932134B publication Critical patent/CN105932134B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201610109347.9A 2015-02-26 2016-02-26 发光器件封装和包括该发光器件封装的照明设备 Active CN105932134B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2015-0026969 2015-02-26
KR1020150026969A KR101669122B1 (ko) 2015-02-26 2015-02-26 발광 소자 패키지

Publications (2)

Publication Number Publication Date
CN105932134A CN105932134A (zh) 2016-09-07
CN105932134B true CN105932134B (zh) 2020-03-10

Family

ID=55405238

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610109347.9A Active CN105932134B (zh) 2015-02-26 2016-02-26 发光器件封装和包括该发光器件封装的照明设备

Country Status (5)

Country Link
US (1) US10109772B2 (enExample)
EP (1) EP3062355A1 (enExample)
JP (1) JP6810927B2 (enExample)
KR (1) KR101669122B1 (enExample)
CN (1) CN105932134B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
CN205944139U (zh) * 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
US9666546B1 (en) * 2016-04-28 2017-05-30 Infineon Technologies Ag Multi-layer metal pads
KR102722845B1 (ko) * 2017-01-25 2024-10-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 그 제조방법, 반도체 소자 패키지, 객체 검출 장치
TWI790984B (zh) * 2017-01-26 2023-01-21 晶元光電股份有限公司 發光元件
CN107910420A (zh) * 2017-12-19 2018-04-13 扬州科讯威半导体有限公司 一种紫外发光二极管及制备方法
KR102607596B1 (ko) * 2018-05-11 2023-11-29 삼성전자주식회사 반도체 발광소자 및 이를 이용한 반도체 발광소자 패키지
CN111446343B (zh) * 2019-04-03 2021-06-08 厦门市三安光电科技有限公司 一种半导体发光器件
KR102630680B1 (ko) * 2019-05-02 2024-01-30 삼성전자주식회사 Led 소자, led 소자의 제조 방법 및 led 소자를 포함하는 디스플레이 패널
CN113707041A (zh) * 2020-05-22 2021-11-26 北京芯海视界三维科技有限公司 发光模组、显示模组、显示屏及显示器
JP7621783B2 (ja) * 2020-12-10 2025-01-27 スタンレー電気株式会社 半導体発光装置及び半導体発光素子の支持基板

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1649460A (zh) * 2004-01-26 2005-08-03 株式会社半导体能源研究所 发光器件
CN103119735A (zh) * 2010-09-24 2013-05-22 首尔半导体株式会社 晶片级发光二极管封装件及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2357679B1 (en) * 2008-11-14 2018-08-29 Samsung Electronics Co., Ltd. Vertical/horizontal light-emitting diode for semiconductor
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
JP2013021175A (ja) * 2011-07-12 2013-01-31 Toshiba Corp 半導体発光素子
KR101276053B1 (ko) 2011-07-22 2013-06-17 삼성전자주식회사 반도체 발광소자 및 발광장치
JP5953155B2 (ja) 2012-02-24 2016-07-20 スタンレー電気株式会社 半導体発光装置
US20130292719A1 (en) * 2012-05-04 2013-11-07 Chi Mei Lighting Technology Corp. Light-emitting diode structure and method for manufacturing the same
KR101926361B1 (ko) 2012-06-13 2018-12-07 삼성전자주식회사 반도체 발광소자, 발광장치 및 반도체 발광소자 제조방법
JP2014096539A (ja) 2012-11-12 2014-05-22 Tokuyama Corp 紫外発光素子、および発光構造体
US9482410B2 (en) * 2012-12-11 2016-11-01 Samsung Electronics Co., Ltd. Light emitting module and surface lighting device having the same
JP2014150196A (ja) * 2013-02-01 2014-08-21 Toshiba Corp 半導体発光装置およびその製造方法
US20150008465A1 (en) * 2013-07-08 2015-01-08 Invenlux Corporation Reflective electrode structure, light emitting device and package
KR102162437B1 (ko) * 2014-05-15 2020-10-07 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1649460A (zh) * 2004-01-26 2005-08-03 株式会社半导体能源研究所 发光器件
CN103119735A (zh) * 2010-09-24 2013-05-22 首尔半导体株式会社 晶片级发光二极管封装件及其制造方法

Also Published As

Publication number Publication date
JP6810927B2 (ja) 2021-01-13
EP3062355A1 (en) 2016-08-31
US20160254414A1 (en) 2016-09-01
KR101669122B1 (ko) 2016-10-25
US10109772B2 (en) 2018-10-23
KR20160104233A (ko) 2016-09-05
JP2016163045A (ja) 2016-09-05
CN105932134A (zh) 2016-09-07

Similar Documents

Publication Publication Date Title
CN105932134B (zh) 发光器件封装和包括该发光器件封装的照明设备
US10651345B2 (en) Light emitting device, light emitting device package including the device, and lighting apparatus including the package
US10205058B2 (en) Light-emitting device package and light-emitting apparatus comprising same
US10381519B2 (en) Light emitting device package and lighting apparatus
CN107924968B (zh) 发光元件、包括发光元件的发光元件封装和包括发光元件封装的发光装置
US10418523B2 (en) Light-emitting device and light-emitting device package
CN105529387A (zh) 发光器件封装及包括该封装的照明装置
CN106025034A (zh) 发光器件和包括发光器件的发光器件封装
KR102569249B1 (ko) 발광 소자 패키지
CN105529385B (zh) 发光器件、发光器件封装以及包括该封装的照明装置
CN105552189A (zh) 发光器件封装和包括该封装的发光设备
KR102408617B1 (ko) 발광 소자 패키지 및 이를 포함하는 발광 장치
KR102464028B1 (ko) 발광 소자 패키지 및 이를 포함하는 발광 장치
US20190027647A1 (en) Light emitting diode
KR20160115868A (ko) 발광 소자, 이 소자를 포함하는 발광 소자 패키지, 및 이 패키지를 포함하는 조명 장치
KR20160084992A (ko) 발광 소자
KR102087948B1 (ko) 발광 소자 패키지
KR20160047766A (ko) 발광 소자 및 이를 포함하는 발광 소자 패키지

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20210806

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul City, Korea

Patentee before: LG INNOTEK Co.,Ltd.

TR01 Transfer of patent right
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address