CN105922675B - A kind of aluminium base diamond IGBT heat-radiating substrate materials and preparation method thereof - Google Patents
A kind of aluminium base diamond IGBT heat-radiating substrate materials and preparation method thereof Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
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- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
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- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
- B32B2307/302—Conductive
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/554—Wear resistance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/752—Corrosion inhibitor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/02—Temperature
- B32B2309/022—Temperature vs pressure profiles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
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- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/02—Temperature
- B32B2309/025—Temperature vs time profiles
Abstract
The invention discloses a kind of aluminium base diamond IGBT heat-radiating substrate materials, which includes three layers, respectively：Fine grained diamond/aluminum composite bed coarse diamond/aluminium composite bed fine grained diamond/aluminum composite bed, the fine grained diamond/aluminum composite bed and coarse diamond/aluminium composite bed respectively include two layers, two layers of diamond particle content is different, the particle size of the fine grained diamond is 25 μm, and the particle size of coarse diamond is 20 30 μm.The invention also discloses the preparation methods of the heat-radiating substrate material.The aluminium base diamond IGBT heat-radiating substrate material thermal diffusivities are good, and surface roughness is low, and its good welding performance.
Description
Technical field：
The present invention relates to technical field of composite materials, are specifically related to a kind of aluminium base diamond IGBT heat-radiating substrate materials.
Background technology：
It is improved with the power and integrated level of integrated circuit, the calorific value of chip unit area is also increasing.Simultaneously
With developing for high power module, heat dissipation problem is one of lethal factor for influencing its function life-span, therefore is solved integrated
One of the important means of circuit system heat dissipation problem is to carry out rational Electronic Packaging and thermal design, such as uses radiator or liquid
Cooling system；But these methods can not solve root problem, therefore component costs but increase.Most effective solution heat dissipation is asked
The method of topic is using low thermal coefficient of expansion, high thermal conductivity coefficient, light electronic package material of new generation, because this can be from root
The cooling system rationalized is solved the problems, such as in sheet.
New Materials for Electric Packing is mainly composite material class, especially packet of greatest concern for example in metal-base composites
Include silicon carbide/aluminium, diamond/aluminum, diamond/copper etc..And although the sial that is carbonized has the spies such as at low cost, following process is simple
Point, but considering with regard to radiating efficiency, coefficient of thermal expansion and density, diamond/aluminum composite material are efficiently always, save
The first choice that can, stablize.
IGBT (insulated gate bipolar transistor), is made of double pole triode and insulating gate type field effect tube, is one
The compound full-control type voltage driven type power semiconductor of kind, although it is more more advantageous than the product of same type, with it
Unit area calorific value increases, relative electronic components because the problem of temperature excessively high failure be difficult to solve always, and it is welded
Performance is bad, and layer easily comes off.
Invention content：
The object of the present invention is to provide a kind of aluminium base diamond IGBT heat-radiating substrate materials, and the substrate thermal diffusivity is good, surface
Roughness is low, and its good welding performance.
It is a further object to provide the preparation methods of the aluminium base diamond IGBT heat-radiating substrate materials.
To achieve the above object, the present invention uses following technical scheme：
A kind of aluminium base diamond IGBT heat-radiating substrate materials, the heat-radiating substrate include three layers, respectively：Fine grained Buddha's warrior attendant
Stone/aluminium composite bed-coarse diamond/aluminium composite bed-fine grained diamond/aluminum composite bed, the fine grained diamond/aluminum are answered
It closes layer and coarse diamond/aluminium composite bed respectively includes two layers, two layers of diamond particle content is different, the fine grained gold
The particle size of hard rock is 2-5 μm, and the particle size of coarse diamond is 20-30 μm.
As a preferred embodiment of the above technical solution, the thickness of the fine grained diamond/aluminum composite bed be 0.5-1mm, thick
The thickness shell of particle diamond/aluminium composite bed thickness according to needed for product adjusts.
As a preferred embodiment of the above technical solution, the fine grained diamond/aluminum composite bed and coarse diamond/aluminium are compound
Layer respectively includes two layers, and the mass fraction of upper strata diamond is 60-70%, and the content of lower floor's diamond is the half on upper strata.
A kind of preparation method of aluminium base diamond IGBT heat-radiating substrate materials, includes the following steps：
(1) by different quality than fine grained diamond, coarse diamond be added to batch mixing with aluminum substrate powder respectively
In machine, add in steel ball and be uniformly mixed, the different mixed-powder of diamond content is made；
(2) by the different mixed-powder of the different mixed-powder of fine grained diamond content, coarse diamond content, thin
The different mixed-powder of particles diamonds content is packaged in molding die successively, is carried out cold moudling, is obtained billet；
(3) by the billet being packaged in molding die under inert gas atmosphere, progress is hot-forming, will be hot-forming
Billet is encapsulated into metal capsule, carries out high-temperature vacuum degassing processing；
(4) hot isostatic pressing densification will be carried out through the billet of high-temperature vacuum degassing processing, it is 100% to be shaped to consistency
The metal capsule outside hot isostatic pressing billet is removed in composite material billet, finally machining, obtains aluminium base diamond IGBT heat dissipations
Baseplate material.
As a preferred embodiment of the above technical solution, in step (2), the pressure of cold moudling is 50-60MPa, is cold-pressed consistency
For 70-90%.
As a preferred embodiment of the above technical solution, in step (3), hot-forming hot pressing temperature is 400-500 DEG C, and pressure is
45-70MPa, hot pressing consistency are 70%-90%.
As a preferred embodiment of the above technical solution, in step (3), the outgassing temperature of high-temperature vacuum degassing processing is 540-620
DEG C, heating rate is 20-50 DEG C/h.Vacuum degree is 0.45Pa hereinafter, the degasification time is no more than 28h.
As a preferred embodiment of the above technical solution, in step (4), hip temperature is protected with high-temperature vacuum degassing processing temperature
It holds unanimously, is 540-620 DEG C, pressure 100-130MPa, heat-insulation pressure keeping 6h.
As a preferred embodiment of the above technical solution, in step (4), obtained aluminium base diamond IGBT heat-radiating substrates material according to
Secondary including fine grained diamond/Al composite beds that fine grained diamond content is 60-70%, fine grained diamond content is 30-
35% fine grained diamond/Al composite beds, coarse diamond/Al composite beds that coarse diamond content is 60-70%,
The coarse diamond that coarse diamond content is 30-35%/Al composite beds, fine grained diamond content are 60-70%'s
Fine grained diamond/Al composite beds, fine grained diamond/Al composite beds that fine grained diamond content is 30-35%.
The invention has the advantages that：
(1) present invention can be controlled using powder metallurgical technique, the content of diamond particles；
(2) present invention uses hot-pressing technique that billet hot pressing consistency is caused for 70-90%, to use inert gas warranty powder
It will not be oxidized, be pressed at a suitable temperature, every layer of residual stress can be allowed all to be released, be not in
Interlaminar Crack；
(3) aluminium base diamond IGBT heat-radiating substrate material heat dissipation performances produced by the present invention are excellent, wear-resisting, corrosion resistance
Good, surface roughness is low, substantially reduces it and the thermal resistance caused by surface roughness is excessively high is contacted with chip.
Specific embodiment：
In order to better understand the present invention, below by embodiment, the present invention is further described, and embodiment is served only for solving
The present invention is released, any restriction will not be formed to the present invention.
Embodiment 1
A kind of aluminium base diamond IGBT heat-radiating substrate materials, the heat-radiating substrate successively include diamond content be 60% it is thin
Particles diamonds/aluminium composite bed, fine grained diamond/Al composite beds that diamond content is 30%, diamond content 60%
Coarse diamond/aluminium composite bed, diamond content be 30% coarse diamond/Al composite beds, diamond content be
60% fine grained diamond/aluminum composite bed, fine grained diamond/Al composite beds that diamond content is 30%, described thin
The particle size of particle diamond is 2 μm, and the particle size of coarse diamond is 20 μm, fine grained diamond/Al composite beds
Thickness is 0.5mm；
Preparation method includes the following steps：
(1) by different quality than fine grained diamond, coarse diamond be added to batch mixing with aluminum substrate powder respectively
In machine, add in steel ball and be uniformly mixed, the different mixed-powder of diamond content is made；
(2) by the different mixed-powder of the different mixed-powder of fine grained diamond content, coarse diamond content, thin
The different mixed-powder of particles diamonds content is packaged in molding die successively, is carried out in the case where pressure is the pressure of 50MPa cold
Molded, cold pressing consistency is 70%, obtains billet；
(3) by the billet being packaged in molding die under inert gas atmosphere, it is 400 DEG C in hot pressing temperature, pressure is
Carried out under conditions of 45MPa it is hot-forming, hot pressing consistency be 70%, hot-forming billet is encapsulated into metal capsule,
High-temperature vacuum degassing processing is carried out, the outgassing temperature of high-temperature vacuum degassing processing is 540 DEG C, and heating rate is 20 DEG C/h.Vacuum
It spends for 0.45Pa hereinafter, the degasification time is no more than 28h；
(4) by the billet through high-temperature vacuum degassing processing at 540 DEG C, pressure carries out hot isostatic pressing under conditions of being 100MPa
Densification, heat-insulation pressure keeping 6h are shaped to the composite material billet that consistency is 100%, and hot isostatic pressing base is removed in finally machining
Metal capsule outside ingot obtains aluminium base diamond IGBT heat-radiating substrate materials.
Embodiment 2
A kind of aluminium base diamond IGBT heat-radiating substrate materials, the heat-radiating substrate successively include diamond content be 70% it is thin
Particles diamonds/aluminium composite bed, fine grained diamond/Al composite beds that diamond content is 35%, diamond content 70%
Coarse diamond/aluminium composite bed, diamond content be 35% coarse diamond/Al composite beds, diamond content be
70% fine grained diamond/aluminum composite bed, fine grained diamond/Al composite beds that diamond content is 35%, described thin
The particle size of particle diamond is 5 μm, and the particle size of coarse diamond is 30 μm, fine grained diamond/Al composite beds
Thickness is 1mm；
Preparation method includes the following steps：
(1) by different quality than fine grained diamond, coarse diamond be added to batch mixing with aluminum substrate powder respectively
In machine, add in steel ball and be uniformly mixed, the different mixed-powder of diamond content is made；
(2) by the different mixed-powder of the different mixed-powder of fine grained diamond content, coarse diamond content, thin
The different mixed-powder of particles diamonds content is packaged in molding die successively, is carried out in the case where pressure is the pressure of 60MPa cold
Molded, cold pressing consistency is 90%, obtains billet；
(3) by the billet being packaged in molding die under inert gas atmosphere, it is 500 DEG C in hot pressing temperature, pressure is
Carried out under conditions of 70MPa it is hot-forming, hot pressing consistency be 90%, hot-forming billet is encapsulated into metal capsule,
High-temperature vacuum degassing processing is carried out, the outgassing temperature of high-temperature vacuum degassing processing is 620 DEG C, and heating rate is 50 DEG C/h.Vacuum
It spends for 0.45Pa hereinafter, the degasification time is no more than 28h；
(4) by the billet through high-temperature vacuum degassing processing at 620 DEG C, pressure carries out hot isostatic pressing under conditions of being 130MPa
Densification, heat-insulation pressure keeping 6h are shaped to the composite material billet that consistency is 100%, and hot isostatic pressing base is removed in finally machining
Metal capsule outside ingot obtains aluminium base diamond IGBT heat-radiating substrate materials.
Embodiment 3
A kind of aluminium base diamond IGBT heat-radiating substrate materials, the heat-radiating substrate successively include diamond content be 62% it is thin
Particles diamonds/aluminium composite bed, fine grained diamond/Al composite beds that diamond content is 31%, diamond content 62%
Coarse diamond/aluminium composite bed, diamond content be 31% coarse diamond/Al composite beds, diamond content be
62% fine grained diamond/aluminum composite bed, fine grained diamond/Al composite beds that diamond content is 31%, described thin
The particle size of particle diamond is 3 μm, and the particle size of coarse diamond is 25 μm, fine grained diamond/Al composite beds
Thickness is 0.6mm；
Preparation method includes the following steps：
(1) by different quality than fine grained diamond, coarse diamond be added to batch mixing with aluminum substrate powder respectively
In machine, add in steel ball and be uniformly mixed, the different mixed-powder of diamond content is made；
(2) by the different mixed-powder of the different mixed-powder of fine grained diamond content, coarse diamond content, thin
The different mixed-powder of particles diamonds content is packaged in molding die successively, is carried out in the case where pressure is the pressure of 55MPa cold
Molded, cold pressing consistency is 75%, obtains billet；
(3) by the billet being packaged in molding die under inert gas atmosphere, it is 420 DEG C in hot pressing temperature, pressure is
Carried out under conditions of 50MPa it is hot-forming, hot pressing consistency be 80%, hot-forming billet is encapsulated into metal capsule,
High-temperature vacuum degassing processing is carried out, the outgassing temperature of high-temperature vacuum degassing processing is 560 DEG C, and heating rate is 30 DEG C/h.Vacuum
It spends for 0.45Pa hereinafter, the degasification time is no more than 28h；
(4) by the billet through high-temperature vacuum degassing processing at 560 DEG C, pressure carries out hot isostatic pressing under conditions of being 110MPa
Densification, heat-insulation pressure keeping 6h are shaped to the composite material billet that consistency is 100%, and hot isostatic pressing base is removed in finally machining
Metal capsule outside ingot obtains aluminium base diamond IGBT heat-radiating substrate materials.
Embodiment 4
A kind of aluminium base diamond IGBT heat-radiating substrate materials, the heat-radiating substrate successively include diamond content be 64% it is thin
Particles diamonds/aluminium composite bed, fine grained diamond/Al composite beds that diamond content is 32%, diamond content 64%
Coarse diamond/aluminium composite bed, diamond content be 32% coarse diamond/Al composite beds, diamond content be
64% fine grained diamond/aluminum composite bed, fine grained diamond/Al composite beds that diamond content is 32%, described thin
The particle size of particle diamond is 4 μm, and the particle size of coarse diamond is 20 μm, fine grained diamond/Al composite beds
Thickness is 0.7mm；
Preparation method includes the following steps：
(1) by different quality than fine grained diamond, coarse diamond be added to batch mixing with aluminum substrate powder respectively
In machine, add in steel ball and be uniformly mixed, the different mixed-powder of diamond content is made；
(2) by the different mixed-powder of the different mixed-powder of fine grained diamond content, coarse diamond content, thin
The different mixed-powder of particles diamonds content is packaged in molding die successively, is carried out in the case where pressure is the pressure of 60MPa cold
Molded, cold pressing consistency is 80%, obtains billet；
(3) by the billet being packaged in molding die under inert gas atmosphere, it is 440 DEG C in hot pressing temperature, pressure is
Carried out under conditions of 55MPa it is hot-forming, hot pressing consistency be 75%, hot-forming billet is encapsulated into metal capsule,
High-temperature vacuum degassing processing is carried out, the outgassing temperature of high-temperature vacuum degassing processing is 580 DEG C, and heating rate is 35 DEG C/h.Vacuum
It spends for 0.45Pa hereinafter, the degasification time is no more than 28h；
(4) by the billet through high-temperature vacuum degassing processing at 580 DEG C, pressure carries out hot isostatic pressing under conditions of being 120MPa
Densification, heat-insulation pressure keeping 6h are shaped to the composite material billet that consistency is 100%, and hot isostatic pressing base is removed in finally machining
Metal capsule outside ingot obtains aluminium base diamond IGBT heat-radiating substrate materials.
Embodiment 5
A kind of aluminium base diamond IGBT heat-radiating substrate materials, the heat-radiating substrate successively include diamond content be 66% it is thin
Particles diamonds/aluminium composite bed, fine grained diamond/Al composite beds that diamond content is 33%, diamond content 66%
Coarse diamond/aluminium composite bed, diamond content be 33% coarse diamond/Al composite beds, diamond content be
66% fine grained diamond/aluminum composite bed, fine grained diamond/Al composite beds that diamond content is 33%, described thin
The particle size of particle diamond is 3 μm, and the particle size of coarse diamond is 25 μm, fine grained diamond/Al composite beds
Thickness is 0.8mm；
Preparation method includes the following steps：
(1) by different quality than fine grained diamond, coarse diamond be added to batch mixing with aluminum substrate powder respectively
In machine, add in steel ball and be uniformly mixed, the different mixed-powder of diamond content is made；
(2) by the different mixed-powder of the different mixed-powder of fine grained diamond content, coarse diamond content, thin
The different mixed-powder of particles diamonds content is packaged in molding die successively, is carried out in the case where pressure is the pressure of 55MPa cold
Molded, cold pressing consistency is 85%, obtains billet；
(3) by the billet being packaged in molding die under inert gas atmosphere, it is 460 DEG C in hot pressing temperature, pressure is
Carried out under conditions of 60MPa it is hot-forming, hot pressing consistency be 85%, hot-forming billet is encapsulated into metal capsule,
High-temperature vacuum degassing processing is carried out, the outgassing temperature of high-temperature vacuum degassing processing is 600 DEG C, and heating rate is 40 DEG C/h.Vacuum
It spends for 0.45Pa hereinafter, the degasification time is no more than 28h；
(4) by the billet through high-temperature vacuum degassing processing at 600 DEG C, pressure carries out hot isostatic pressing under conditions of being 120MPa
Densification, heat-insulation pressure keeping 6h are shaped to the composite material billet that consistency is 100%, and hot isostatic pressing base is removed in finally machining
Metal capsule outside ingot obtains aluminium base diamond IGBT heat-radiating substrate materials.
Embodiment 6
A kind of aluminium base diamond IGBT heat-radiating substrate materials, the heat-radiating substrate successively include diamond content be 68% it is thin
Particles diamonds/aluminium composite bed, fine grained diamond/Al composite beds that diamond content is 34%, diamond content 68%
Coarse diamond/aluminium composite bed, diamond content be 34% coarse diamond/Al composite beds, diamond content be
68% fine grained diamond/aluminum composite bed, fine grained diamond/Al composite beds that diamond content is 34%, described thin
The particle size of particle diamond is 5 μm, and the particle size of coarse diamond is 25 μm, fine grained diamond/Al composite beds
Thickness is 0.9mm；
Preparation method includes the following steps：
(1) by different quality than fine grained diamond, coarse diamond be added to batch mixing with aluminum substrate powder respectively
In machine, add in steel ball and be uniformly mixed, the different mixed-powder of diamond content is made；
(2) by the different mixed-powder of the different mixed-powder of fine grained diamond content, coarse diamond content, thin
The different mixed-powder of particles diamonds content is packaged in molding die successively, is carried out in the case where pressure is the pressure of 60MPa cold
Molded, cold pressing consistency is 85%, obtains billet；
(3) by the billet being packaged in molding die under inert gas atmosphere, it is 480 DEG C in hot pressing temperature, pressure is
Carried out under conditions of 65MPa it is hot-forming, hot pressing consistency be 90%, hot-forming billet is encapsulated into metal capsule,
High-temperature vacuum degassing processing is carried out, the outgassing temperature of high-temperature vacuum degassing processing is 610 DEG C, and heating rate is 45 DEG C/h.Vacuum
It spends for 0.45Pa hereinafter, the degasification time is no more than 28h；
(4) by the billet through high-temperature vacuum degassing processing at 610 DEG C, pressure carries out hot isostatic pressing under conditions of being 125MPa
Densification, heat-insulation pressure keeping 6h are shaped to the composite material billet that consistency is 100%, and hot isostatic pressing base is removed in finally machining
Metal capsule outside ingot obtains aluminium base diamond IGBT heat-radiating substrate materials.
Claims (8)
1. a kind of aluminium base diamond IGBT heat-radiating substrate materials, which is characterized in that the heat-radiating substrate includes three layers, respectively：Carefully
Particles diamonds/aluminium composite bed-coarse diamond/aluminium composite bed-fine grained diamond/aluminum composite bed, the fine grained gold
Hard rock/aluminium composite bed and coarse diamond/aluminium composite bed respectively include two layers, and two layers of diamond particle content is different, institute
The particle size for stating fine grained diamond is 2-5 μm, and the particle size of coarse diamond is 20-30 μm；
Wherein, the fine grained diamond/aluminum composite bed and coarse diamond/aluminium composite bed respectively include two layers, upper strata gold
The mass fraction of hard rock is 60-70%, and the content of lower floor's diamond is the half on upper strata.
A kind of 2. aluminium base diamond IGBT heat-radiating substrate materials as described in claim 1, which is characterized in that the fine grained gold
The thickness of hard rock/aluminium composite bed is 0.5-1mm, the thickness of coarse diamond/aluminium composite bed can according to needed for product thickness tune
It is whole.
3. a kind of preparation method of aluminium base diamond IGBT heat-radiating substrate materials as described in claim 1 to 2 is any, feature
It is, includes the following steps：
(1) by different quality than fine grained diamond, coarse diamond be added in batch mixer with aluminum substrate powder respectively,
It adds in steel ball to be uniformly mixed, the different mixed-powder of diamond content is made；
(2) by the different mixed-powder of the different mixed-powder of fine grained diamond content, coarse diamond content, fine grained
The different mixed-powder of diamond content is packaged in molding die successively, is carried out cold moudling, is obtained billet；
(3) by the billet being packaged in molding die under inert gas atmosphere, progress is hot-forming, by hot-forming billet
It is encapsulated into metal capsule, carries out high-temperature vacuum degassing processing；
(4) will through the billet of high-temperature vacuum degassing processing carry out hot isostatic pressing densification, be shaped to consistency be 100% it is compound
Material billet, finally machining remove the metal capsule outside hot isostatic pressing billet, obtain aluminium base diamond IGBT heat-radiating substrates
Material.
A kind of 4. preparation method of aluminium base diamond IGBT heat-radiating substrate materials as claimed in claim 3, which is characterized in that step
Suddenly in (2), the pressure of cold moudling is 50-60MPa, and cold pressing consistency is 70-90%.
A kind of 5. preparation method of aluminium base diamond IGBT heat-radiating substrate materials as claimed in claim 3, which is characterized in that step
Suddenly in (3), hot-forming hot pressing temperature is 400-500 DEG C, pressure 45-70MPa, and hot pressing consistency is 70%-90%.
A kind of 6. preparation method of aluminium base diamond IGBT heat-radiating substrate materials as claimed in claim 3, which is characterized in that step
Suddenly in (3), the outgassing temperature of high-temperature vacuum degassing processing is 540-620 DEG C, and heating rate is 20-50 DEG C/h, and vacuum degree is
0.45Pa hereinafter, the degasification time be no more than 28h.
A kind of 7. preparation method of aluminium base diamond IGBT heat-radiating substrate materials as claimed in claim 3, which is characterized in that step
Suddenly in (4), hip temperature is consistent with high-temperature vacuum degassing processing temperature, is 540-620 DEG C, pressure 100-
130MPa, heat-insulation pressure keeping 6h.
A kind of 8. preparation method of aluminium base diamond IGBT heat-radiating substrate materials as claimed in claim 3, which is characterized in that step
Suddenly in (4), it is 60-70%'s that obtained aluminium base diamond IGBT heat-radiating substrates material includes fine grained diamond content successively
Fine grained diamond/Al composite beds, fine grained diamond/Al composite beds, the coarse granule that fine grained diamond content is 30-35%
The coarse diamond that diamond content is 60-70%/Al composite beds, the coarse granule that coarse diamond content is 30-35%
Diamond/Al composite beds, fine grained diamond/Al composite beds, the fine grained diamond that fine grained diamond content is 60-70%
Content is fine grained diamond/Al composite beds of 30-35%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610260745.0A CN105922675B (en) | 2016-04-25 | 2016-04-25 | A kind of aluminium base diamond IGBT heat-radiating substrate materials and preparation method thereof |
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| TWI258333B (en) * | 2004-06-16 | 2006-07-11 | Chien-Min Sung | Diamond composite heat spreader having thermal conductivity gradients and associated methods |
| CN101723678A (en) * | 2009-12-14 | 2010-06-09 | 哈尔滨工业大学 | Method for preparing novel conductive ceramic evaporation boat by combustion synthesis |
| CN105483454A (en) * | 2015-12-28 | 2016-04-13 | 北京有色金属研究总院 | Manufacturing method of laminated aluminum matrix composite for electronic packaging |
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| KR101696945B1 (en) * | 2009-02-12 | 2017-01-16 | 덴카 주식회사 | Substrate comprising aluminum/graphite composite, heat dissipation part comprising same, and led luminescent member |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI258333B (en) * | 2004-06-16 | 2006-07-11 | Chien-Min Sung | Diamond composite heat spreader having thermal conductivity gradients and associated methods |
| CN101723678A (en) * | 2009-12-14 | 2010-06-09 | 哈尔滨工业大学 | Method for preparing novel conductive ceramic evaporation boat by combustion synthesis |
| CN105483454A (en) * | 2015-12-28 | 2016-04-13 | 北京有色金属研究总院 | Manufacturing method of laminated aluminum matrix composite for electronic packaging |
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