CN105914583A - Series-wound semiconductor laser group - Google Patents
Series-wound semiconductor laser group Download PDFInfo
- Publication number
- CN105914583A CN105914583A CN201610481508.7A CN201610481508A CN105914583A CN 105914583 A CN105914583 A CN 105914583A CN 201610481508 A CN201610481508 A CN 201610481508A CN 105914583 A CN105914583 A CN 105914583A
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- China
- Prior art keywords
- electrode
- semiconductor laser
- semiconductor
- lead
- series
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a series-wound semiconductor laser group. The series-wound semiconductor laser group comprises multiple semiconductor lasers, wherein each semiconductor laser comprises a semiconductor mounting base, and an upper electrode, a left electrode and a right electrode which are arranged on the semiconductor mounting base in an inverted T-shaped manner; a semiconductor chip is fixed on each upper electrode; a first fixed pin is arranged on each left electrode; a second fixed pin is arranged on each right electrode; the upper electrode and the left electrode are connected through a first lead band; the upper electrode and the right electrode are connected through a second lead band; a bus bar or a lead is fixed on the first fixed pin and the second fixed pin; the multiple semiconductor lasers are connected through bus bars; a contact electrode is connected with the fixed pin of the semiconductor laser at the tail end; and the contact electrode is connected with a wire. According to the series-wound semiconductor laser group provided by the invention, the multiple semiconductor lasers are distributed in one row and are used in a series-wound manner, and the operation of each semiconductor laser is not influenced.
Description
Technical field
The present invention relates to active light emissive device, be specifically related to the semiconductor laser group of a kind of series connection.
Background technology
Being provided with semiconductor laser chip in semiconductor laser, the operation principle of semiconductor laser chip is logical
Cross certain energisation mode, between the carrying of semiconductor substance, or the carrying and impurity of semiconductor substance
Between energy level, it is achieved the population inversion of nonequilibrium carrier, when a large amount of electricity being in population inversion state
When son and hole-recombination, just produce stimulated emission effect.
During semiconductor laser work, amount of heat can be produced, the most high-power semiconductor laser,
In order to make heat radiation is good, some technique can increase the external surface area of semiconductor laser, i.e. increases heat radiation
Face, but to be allowed to again volume excessive for this scheme, when multiple semiconductor laser cooperation, above two
Individual problem just seems more crucial.
Summary of the invention
For the deficiencies in the prior art, the invention discloses the semiconductor laser group of a kind of series connection.
Technical scheme is as follows:
The semiconductor laser group of a kind of series connection, including multiple semiconductor lasers；Each semiconductor laser
Including include in quasiconductor mounting seat and quasiconductor mounting seat in isosceles triangle be placed with upper electrode, left electrode,
Right electrode；It is fixed with semiconductor chip on upper electrode；It is provided with first on left electrode and fixes pin；Right electricity
It is provided with second on pole and fixes pin；Connected by the first lead-in wire band between upper electrode and left electrode；Power on
Cross the second lead-in wire band between pole and right electrode to connect；Busbar or lead-in wire are fixed on first fixes pin and
Two fix on pin；It is connected by busbar between multiple semiconductor lasers；Quasiconductor at end
Connecting on the fixing pin of laser instrument and have contact electrode, connecting on contact electrode has wire.
Its further technical scheme is, described quasiconductor mounting seat is by the ALN insulation that thickness is 400 μm
Material is made.
Its further technical scheme is, described upper electrode, left electrode, right electrode are made of copper.
The method have the benefit that:
Semiconductor laser chip is individually fixed on an electrode by the present invention, there is no other during Laser emission
Accessory stops, it is possible to reduce volume at the two ends, left and right of semiconductor laser as far as possible, does not also interfere with half
The heat radiation of conductor Laser chip, the arrangement of multiple semiconductor lasers is that a row is used in series by the present invention simultaneously,
Have no effect on the work of each semiconductor laser.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the present invention.
Detailed description of the invention
Fig. 1 is the schematic diagram of the present invention.As it is shown in figure 1, the present invention includes multiple semiconductor laser.Half
Conductor mounting seat 1 is made up of the ALN insulant that thickness is 400 μm.In product in quasiconductor mounting seat 1
Font be placed with electrode 2, left electrode 6, right electrode 7, upper electrode 2, left electrode 6, right electrode 7
It is made of copper.It is fixed with semiconductor chip 3 on upper electrode 2；It is provided with first on left electrode 6 fixing to draw
Foot 8；It is provided with second on right electrode 7 and fixes pin 9.This kind of arrangement mode of electrode so that partly lead
Body chip 3 is individually fixed, and left and right does not affect the miscellaneous part that semiconductor chip is luminous, then and first, partly lead
The width of body chip can reduce as far as possible, the when of minimum, can be only equal with the length of semiconductor chip,
Second, semiconductor chip is the most luminous, then the right and left is suitably connected the common work of multiple photogenerator
Make and do not interact.By the first lead-in wire band 4 connection between upper electrode 2 and left electrode 6；Upper electrode 2
And between right electrode 7, cross the second lead-in wire band 5 connection；Busbar or lead-in wire are fixed on first fixes pin 8
Fix on pin 9 with second.
It is connected by busbar between multiple semiconductor lasers；Semiconductor laser fixing at end
Connecting on pin and have contact electrode, connecting on contact electrode has wire
Above-described is only the preferred embodiment of the present invention, the invention is not restricted to above example.Permissible
Understanding, those skilled in the art the most directly derive or associate
The oher improvements and changes arrived, within being all considered as being included in protection scope of the present invention.
Claims (3)
1. the semiconductor laser group of a series connection, it is characterised in that: include multiple semiconductor laser；
Each semiconductor laser includes in quasiconductor mounting seat (1) and quasiconductor mounting seat (1) in product word
Shape be placed with electrode (2), left electrode (6), right electrode (7)；Half it is fixed with on upper electrode (2)
Conductor chip (3)；It is provided with first on left electrode (6) and fixes pin (8)；On right electrode (7)
It is provided with second and fixes pin (9)；By the first lead-in wire band (4) between upper electrode (2) and left electrode (6)
Connect；Cross the second lead-in wire band (5) between upper electrode (2) and right electrode (7) to connect；Busbar or
Lead-in wire is fixed on first to be fixed pin (8) and second and fixes on pin (9)；Multiple semiconductor lasers
Between be connected by busbar (10)；The semiconductor laser of end fixing pin (8,9) it
Upper connection has contact electrode (11), and connecting on contact electrode (11) has wire (12).
2. the semiconductor laser of small size as claimed in claim 1, it is characterised in that described partly lead
Body mounting seat (1) is made up of the ALN insulant that thickness is 400 μm.
3. the semiconductor laser of small size as claimed in claim 1, it is characterised in that described in power on
Pole (2), left electrode (6), right electrode (7) are made of copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610481508.7A CN105914583A (en) | 2016-06-28 | 2016-06-28 | Series-wound semiconductor laser group |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610481508.7A CN105914583A (en) | 2016-06-28 | 2016-06-28 | Series-wound semiconductor laser group |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105914583A true CN105914583A (en) | 2016-08-31 |
Family
ID=56758686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610481508.7A Pending CN105914583A (en) | 2016-06-28 | 2016-06-28 | Series-wound semiconductor laser group |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105914583A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201171142Y (en) * | 2008-01-22 | 2008-12-24 | 北京吉泰基业科技有限公司 | Encapsulation structure for laser diode array |
| CN101501946A (en) * | 2006-08-11 | 2009-08-05 | 住友电气工业株式会社 | Surface emitting laser element and its manufacturing method, and surface emitting laser array and its manufacturing method |
| CN203071395U (en) * | 2013-01-04 | 2013-07-17 | 深圳市镭信威光电科技有限公司 | A novel large-power semiconductor laser device |
| CN105406350A (en) * | 2014-09-04 | 2016-03-16 | 佳耐美电气有限公司 | Semiconductor Lasers |
| CN205265037U (en) * | 2015-12-16 | 2016-05-25 | 西安炬光科技股份有限公司 | Chamber semiconductor laser is penetrated to single shot |
| CN105703215A (en) * | 2016-04-08 | 2016-06-22 | 无锡亮源激光技术有限公司 | Semiconductor laser for solid-state laser pumping source |
-
2016
- 2016-06-28 CN CN201610481508.7A patent/CN105914583A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101501946A (en) * | 2006-08-11 | 2009-08-05 | 住友电气工业株式会社 | Surface emitting laser element and its manufacturing method, and surface emitting laser array and its manufacturing method |
| CN201171142Y (en) * | 2008-01-22 | 2008-12-24 | 北京吉泰基业科技有限公司 | Encapsulation structure for laser diode array |
| CN203071395U (en) * | 2013-01-04 | 2013-07-17 | 深圳市镭信威光电科技有限公司 | A novel large-power semiconductor laser device |
| CN105406350A (en) * | 2014-09-04 | 2016-03-16 | 佳耐美电气有限公司 | Semiconductor Lasers |
| CN205265037U (en) * | 2015-12-16 | 2016-05-25 | 西安炬光科技股份有限公司 | Chamber semiconductor laser is penetrated to single shot |
| CN105703215A (en) * | 2016-04-08 | 2016-06-22 | 无锡亮源激光技术有限公司 | Semiconductor laser for solid-state laser pumping source |
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| C06 | Publication | ||
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| C10 | Entry into substantive examination | ||
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160831 |
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| WD01 | Invention patent application deemed withdrawn after publication |