CN105914579A - Small-size semiconductor laser - Google Patents
Small-size semiconductor laser Download PDFInfo
- Publication number
- CN105914579A CN105914579A CN201610480056.0A CN201610480056A CN105914579A CN 105914579 A CN105914579 A CN 105914579A CN 201610480056 A CN201610480056 A CN 201610480056A CN 105914579 A CN105914579 A CN 105914579A
- Authority
- CN
- China
- Prior art keywords
- electrode
- semiconductor laser
- semiconductor
- upper electrode
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a small-size semiconductor laser, which comprises a semiconductor mounting base, an upper electrode, a left electrode and a right electrode, wherein the upper electrode, the left electrode and the right electrode are arranged on the semiconductor mounting base in a form like a Chinese character 'pin'; a semiconductor chip is fixed on the upper electrode; a first fixed pin is arranged on the left electrode; a second fixed pin is arranged on the right electrode; the upper electrode is connected with the left electrode through a first lead tape; the upper electrode is connected with the right electrode through a second lead tape; and a bus bar or a lead is fixed on the first fixed pin and the second fixed pin. The semiconductor laser chip is individually fixed on one electrode; and laser light is not blocked by other accessories when emitted, so that the sizes can be reduced to the greatest extent at the left end and the right end of the semiconductor laser; and heat dissipation of the semiconductor laser chip is not affected. Meanwhile, the small-size semiconductor laser is also suitable for arrangement of a plurality of semiconductor lasers into a row for use; and work of each semiconductor laser is not affected.
Description
Technical field
The present invention relates to active optical component, be specifically related to the semiconductor laser of a kind of small size.
Background technology
Being provided with semiconductor laser chip in semiconductor laser, the operation principle of semiconductor laser chip is logical
Cross certain energisation mode, between the carrying of semiconductor substance, or the carrying and impurity of semiconductor substance
Between energy level, it is achieved the population inversion of nonequilibrium carrier, when a large amount of electricity being in population inversion state
When son and hole-recombination, just produce stimulated emission effect.
During semiconductor laser work, amount of heat can be produced, the most high-power semiconductor laser,
In order to make heat radiation is good, some technique can increase the external surface area of semiconductor laser, i.e. increases heat radiation
Face, but to be allowed to again volume excessive for this scheme, how to make the semiconductor laser core in semiconductor laser
Sheet heat radiation is good, is the problem being commonly encountered in industry.
Summary of the invention
For the deficiencies in the prior art, the invention discloses the semiconductor laser of a kind of small size.
Technical scheme is as follows:
A kind of semiconductor laser of small size, including in quasiconductor mounting seat and quasiconductor mounting seat in product word
Shape be placed with electrode, left electrode, right electrode；It is fixed with semiconductor chip on upper electrode；Left electrode it
On be provided with first and fix pin；It is provided with second on right electrode and fixes pin；Upper electrode and left electrode it
Between by first lead-in wire band connect；Cross the second lead-in wire band between upper electrode and right electrode to connect；Busbar or
Lead-in wire is fixed on first to be fixed pin and second and fixes on pin.
Its further technical scheme is, described quasiconductor mounting seat is by the ALN insulation that thickness is 400 μm
Material is made.
Its further technical scheme is, described upper electrode, left electrode, right electrode are made of copper.
The method have the benefit that:
Semiconductor laser chip is individually fixed on an electrode by the present invention, there is no other during Laser emission
Accessory stops, it is possible to reduce volume at the two ends, left and right of semiconductor laser as far as possible, does not also interfere with half
The heat radiation of conductor Laser chip.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the present invention.
Detailed description of the invention
Fig. 1 is the schematic diagram of the present invention.As it is shown in figure 1, the present invention includes quasiconductor mounting seat 1, partly lead
Body mounting seat 1 is made up of the ALN insulant that thickness is 400 μm.In product word in quasiconductor mounting seat 1
Shape be placed with electrode 2, left electrode 6, right electrode 7, upper electrode 2, left electrode 6, right electrode 7 by
Copper becomes.It is fixed with semiconductor chip 3 on upper electrode 2；It is provided with first on left electrode 6 and fixes pin
8；It is provided with second on right electrode 7 and fixes pin 9.This kind of arrangement mode of electrode so that semiconductor core
Sheet 3 is individually fixed, and left and right does not affect the miscellaneous part that semiconductor chip is luminous, then and first, semiconductor core
The width of sheet can reduce as far as possible, the when of minimum, can be only equal with the length of semiconductor chip, and second,
Semiconductor chip is the most luminous, then the right and left suitably connect multiple photogenerator cooperation and not
Interact.By the first lead-in wire band 4 connection between upper electrode 2 and left electrode 6；Upper electrode 2 and right electricity
The second lead-in wire band 5 connection is crossed between pole 7；Busbar or lead-in wire are fixed on first fixes pin 8 and second
On fixing pin 9.
Above-described is only the preferred embodiment of the present invention, the invention is not restricted to above example.Permissible
Understanding, those skilled in the art the most directly derive or associate
The oher improvements and changes arrived, within being all considered as being included in protection scope of the present invention.
Claims (3)
1. the semiconductor laser of a small size, it is characterised in that include quasiconductor mounting seat (1) and
It is placed with upper electrode (2), left electrode (6), right electrode in isosceles triangle in quasiconductor mounting seat (1)
(7)；Semiconductor chip (3) it is fixed with on upper electrode (2)；Left electrode is provided with first on (6)
Fixing pin (8)；It is provided with second on right electrode (7) and fixes pin (9)；Upper electrode (2) and
Connected by the first lead-in wire band (4) between left electrode (6)；Between upper electrode (2) and right electrode (7)
Cross the second lead-in wire band (5) to connect；Busbar or lead-in wire are fixed on first fixes pin (8) and second admittedly
Determine on pin (9).
2. the semiconductor laser of small size as claimed in claim 1, it is characterised in that described partly lead
Body mounting seat (1) is made up of the ALN insulant that thickness is 400 μm.
3. the semiconductor laser of small size as claimed in claim 1, it is characterised in that described in power on
Pole (2), left electrode (6), right electrode (7) are made of copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610480056.0A CN105914579A (en) | 2016-06-27 | 2016-06-27 | Small-size semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610480056.0A CN105914579A (en) | 2016-06-27 | 2016-06-27 | Small-size semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105914579A true CN105914579A (en) | 2016-08-31 |
Family
ID=56759577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610480056.0A Withdrawn CN105914579A (en) | 2016-06-27 | 2016-06-27 | Small-size semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105914579A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201171142Y (en) * | 2008-01-22 | 2008-12-24 | 北京吉泰基业科技有限公司 | Encapsulation structure for laser diode array |
| CN101501946A (en) * | 2006-08-11 | 2009-08-05 | 住友电气工业株式会社 | Surface emitting laser element and its manufacturing method, and surface emitting laser array and its manufacturing method |
| CN203071395U (en) * | 2013-01-04 | 2013-07-17 | 深圳市镭信威光电科技有限公司 | A novel large-power semiconductor laser device |
| CN105406350A (en) * | 2014-09-04 | 2016-03-16 | 佳耐美电气有限公司 | Semiconductor Lasers |
| CN205265037U (en) * | 2015-12-16 | 2016-05-25 | 西安炬光科技股份有限公司 | Chamber semiconductor laser is penetrated to single shot |
| CN105703215A (en) * | 2016-04-08 | 2016-06-22 | 无锡亮源激光技术有限公司 | Semiconductor laser for solid-state laser pumping source |
-
2016
- 2016-06-27 CN CN201610480056.0A patent/CN105914579A/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101501946A (en) * | 2006-08-11 | 2009-08-05 | 住友电气工业株式会社 | Surface emitting laser element and its manufacturing method, and surface emitting laser array and its manufacturing method |
| CN201171142Y (en) * | 2008-01-22 | 2008-12-24 | 北京吉泰基业科技有限公司 | Encapsulation structure for laser diode array |
| CN203071395U (en) * | 2013-01-04 | 2013-07-17 | 深圳市镭信威光电科技有限公司 | A novel large-power semiconductor laser device |
| CN105406350A (en) * | 2014-09-04 | 2016-03-16 | 佳耐美电气有限公司 | Semiconductor Lasers |
| CN205265037U (en) * | 2015-12-16 | 2016-05-25 | 西安炬光科技股份有限公司 | Chamber semiconductor laser is penetrated to single shot |
| CN105703215A (en) * | 2016-04-08 | 2016-06-22 | 无锡亮源激光技术有限公司 | Semiconductor laser for solid-state laser pumping source |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20160831 |