CN105908231A - Sn-plated material for electronic component - Google Patents
Sn-plated material for electronic component Download PDFInfo
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- CN105908231A CN105908231A CN201610102853.5A CN201610102853A CN105908231A CN 105908231 A CN105908231 A CN 105908231A CN 201610102853 A CN201610102853 A CN 201610102853A CN 105908231 A CN105908231 A CN 105908231A
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
- C25D5/505—After-treatment of electroplated surfaces by heat-treatment of electroplated tin coatings, e.g. by melting
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Abstract
The invention aims to provide a Sn-plated material for preparing a conductive spring for connectors and terminals, wherein the Sn-plated material is low in insertion resistance and good in surface gloss. The Sn-plated material is characterized in that a Sn plating layer subjected to reflow soldering treatment is formed on a basis material of copper or copper alloy. The reflow soldering Sn plating layer is composed of an upper Sn layer and a lower Cu-Sn alloy layer. The thickness of the Sn plating layer is 0.2-0.8 mum. The surface roughness Ra of the Sn-plated material is smaller than 0.05 mum in the rolled right-angle direction. The RSm is smaller than 20 mum. The area ratio of the Cu-Sn alloy layer, exposed to the outmost surface thereof, is 5 to 40%. Viewed from the surface, the crystal grain diameter of the exposed Cu-Sn alloy layer is smaller than 3 mum.
Description
Technical field
The present invention relates to be suitable as electronic component, particularly the electric conductivity spring material of adapter, terminal etc.
Sn-plated material.
Background technology
As the electric conductivity spring material of terminal, adapter etc., use copper or the copper alloy implementing Sn plating
Bar (hereinafter referred to as " Sn-plated material ").Typically, Sn-plated material is manufactured by following operation: in plating continuously
After deposited production line carries out defat and pickling, form Cu substrate coating by galvanoplastic, then pass through galvanoplastic
Form Sn layer, finally implement reflow process, make Sn layer melt.
In recent years, owing to the circuit number of electric/electronic increases, advancing electric signal supply to electricity
The multipolarization of the adapter on road.Sn-plated material uses in the contact of adapter because of its flexibility and makes plug and insert
Gas tight (airtight) structure of seat adhesion, therefore with compared with the adapter constituted such as gold-plated, each pole
The insertion force of adapter is higher.Thus result in the increasing of the adapter insertion force produced because of adapter multipolarization
Big problem.
Such as, in automobile production line, it is fitting to connection the operation major part at present of device by manually carrying out.
If the insertion force of adapter becomes big, then can cause burden in assembly line to operator, directly result in work
The reduction of industry efficiency.Thus, the strong insertion force wishing to reduce Sn-plated material.
Additionally, general, terminal, adapter assembly line in, be provided with for detecting surface defect
Detector, its by terminal surfaces irradiate light and detect this reflection light detect defect.Therefore, in order to
Detect defect accurately, it is desirable to the lustrous surface of terminal is high, i.e. the lustrous surface of electric conductivity spring material is high.
General Sn-plated material is after electroplating Cu, Sn in order to copper alloy, by carrying out at Reflow Soldering
Reason, makes Sn layer melt, and has by Cu layer, Cu-Sn alloy-layer, the structure of Sn layer order from mother metal to surface
Make, it is possible to obtain high lustrous surface.
As the method for insertion force for reducing adapter, Patent Document 1 discloses following technology:
In advance to Cu-Ni-Si series copper alloy implement roughening process, afterwards, electroplate Cu, Sn in order, carry out 240～
360 DEG C, the reflow process of 1～12 second, the average thickness thus making Sn system surface layer is 0.4～1.0 μm
Hereinafter, make a part for Cu-Sn alloy-layer be exposed to most surface, a part of Cu is replaced as Ni and
Si so that the surface roughness Ra of Cu-Sn alloy-layer is more than 0.3 μm, Rvk is more than 0.5 μm, from
And realize low plug.
Patent Document 2 discloses following technology: Cu-Ni-Si series copper alloy is electroplated Cu, Sn in order,
Carry out 240～360 DEG C, the reflow process of 1～12 second, thus by a part of the Cu of Cu-Sn alloy-layer
It is replaced as Ni and Si so that surface roughness Rvk of Cu-Sn alloy-layer is more than 0.2 μm, makes Cu-Sn
Alloy-layer is exposed to most surface, and its area ratio is 10～40%, the average thickness of Sn system surface layer be 0.2～
0.6 μm, thus realize low plug.
Patent Document 3 discloses following technology: make to implement the copper alloy of plating by the order of Cu, Sn
By 3～20 seconds in the reflow soldering of 300～900 DEG C, from mother metal to surface, reduce Cu concentration, make Sn
Or Sn alloy component is distributed in Cu-Sn alloy-layer, thus have low plug and high-fire resistance concurrently.
Patent Document 4 discloses following technology: Cu-Ni-Si series copper alloy is electroplated in order Cu,
Sn, is warming up to 240～360 DEG C, keeps 6～12 seconds, and the reflow process being quenched afterwards, thus by Cu-Sn
A part of the Cu of alloy-layer is replaced as Ni and Si so that roughness kurtosis Rku of Cu-Sn alloy-layer
More than 3, making Cu-Sn alloy-layer be exposed to most surface, its area ratio is 10～40%, Sn system surface layer
Average thickness is 0.2～0.4 μm, thus has low plug and high-fire resistance concurrently.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2014-208878 publication
Patent documentation 2: No. 5263435 publications of Japanese Patent No.
Patent documentation 3: No. 5355935 publications of Japanese Patent No.
Patent documentation 4: Japanese Unexamined Patent Publication 2013-049909 publication
The problem that invention is to be solved
As described previously for reducing terminal, the insertion force of adapter, make the part dew of Cu-Sn alloy-layer
The most surface gone out to Sn-plated material is effective.But, if Cu-Sn alloy-layer is exposed to most surface, then
The surface roughness of Sn-plated material increases, it is impossible to obtain good lustrous surface, be therefore not easy terminal,
The assembly line of adapter carries out the detection of surface defect.Do not look in the scope known to the present inventor
To being obtained in that low plug and the invention of good lustrous surface.
Summary of the invention
The present invention completes in view of above-mentioned problem, its object is to, it is provided that a kind of as adapter, terminal
Deng electric conductivity spring material there is low plug and the Sn-plated material of good lustrous surface.
For solving the scheme of problem
The present inventor carries out the result furtherd investigate, it was found that in order to obtain low plug and good surface light
Pool, is effective by being exposed to the crystal grain diameter granular of the Cu-Sn alloy-layer of the most surface of Sn-plated material.
If making Cu-Sn alloy-layer be exposed to the most surface of Sn-plated material, then Cu-Sn by reflow process
The cross sectional shape of alloy-layer is dome-shaped, and therefore melted by reflow process Sn is along Cu-Sn alloy-layer
Shape flow, the surface roughness of the Sn-plated material after reflow process increases, and lustrous surface deteriorates.
Therefore, by making the crystal grain diameter granular of Cu-Sn alloy-layer exposed, it is possible to alleviate by backflow
The flowing of the Sn layer that weldering processes and produces, it is thus achieved that low plug and good lustrous surface.
That is, the present invention is as follows:
(1) a kind of Sn-plated material, it is characterised in that on the matrix material of copper or copper alloy bar, there is reality
Having executed the Sn coating of reflow process, wherein, Reflow Soldering Sn coating is by the Sn layer of upside and the Cu-Sn of downside
Alloy-layer is constituted, and the thickness of Sn coating is 0.2～0.8 μm, the surface of the rolling right angle orientation of Sn-plated material
Roughness Ra is below 0.05 μm, and RSm is below 20 μm, is exposed to the Cu-Sn alloy-layer of most surface
Area ratio be 5～40%, the crystal grain diameter of the Cu-Sn alloy-layer exposed described in when surface observation is
Below 3 μm.
(2) according to the Sn-plated material described in (1), wherein, in the matrix material overlying of copper or copper alloy bar
It is stamped Cu substrate coating or Ni substrate coating or Ni and Cu has been carried out in the order the Ni/Cu of stacking
Double base coating, has Reflow Soldering Sn coating on this substrate coating.
(3) manufacture method of a kind of Sn-plated material, it is characterised in that at the matrix material of copper or copper alloy bar
On material, after forming Sn coating or forming Cu, Sn coating in order, by reflow process, at matrix
Forming Sn layer across Cu-Sn alloy-layer on material, the thickness making described Cu coating is 0～0.5 μm, described
The thickness of Sn coating is 0.5～1.5 μm, in described reflow process with temperature 400～600 DEG C heating 1～
After 30 seconds, the cooling water of 20～90 DEG C of spraying out, then put into the tank to 20～90 DEG C.
(4) manufacture method of a kind of Sn-plated material, it is characterised in that at the matrix material of copper or copper alloy bar
After forming Ni, Cu, Sn coating in order on material, by reflow process, matrix material covers Ni
Substrate coating or Ni/Cu double base coating, form Sn layer across Cu-Sn alloy-layer, make described Ni plate
The thickness of layer is 0.05～3 μm, and the thickness of described Cu coating is 0.05～0.5 μm, the thickness of described Sn coating
Degree is 0.5～1.5 μm, after heating 1～30 second with temperature 400～600 DEG C in described reflow process, and spray
Mist goes out the cooling water of 20～90 DEG C, then puts into the tank to 20～90 DEG C.
(5) a kind of electronic component, it possesses the Sn-plated material described in (1) or (2).
The effect of invention
The Sn-plated material of the present invention particularly in the case of being used in the terminal of automobile and electronic component etc.,
Insertion force during joint is relatively low, can implement surface inspection when terminal assembles accurately.
Accompanying drawing explanation
Fig. 1 is the explanatory diagram of specular reflectivity assay method.
Fig. 2 is the explanatory diagram of coefficient of kinetic friction assay method.
Fig. 3 is the explanatory diagram of the processing method on contact top.
Fig. 4 is the SEM reflection electronic picture of the Sn-plated material of the present invention.
Detailed description of the invention
Hereinafter, an embodiment of the Sn-plated material of the present invention is illustrated.If it should be noted that
Being not particularly illustrated in advance, % represents quality % in the present invention.
(1) composition of matrix material
As the copper bar of the matrix material becoming Sn-plated material, the tough pitch copper of purity more than 99.9%, nothing can be used
Oxygen copper, additionally, as copper alloy bar, can use known copper to close according to required intensity, electric conductivity
Gold.As known copper alloy, such as Cu-Sn-P system alloy, Cu-Zn system alloy, Cu-Ti system can be enumerated
Alloy, Cu-Ni-Si alloy, Cu-Sn-Zn system alloy, Cu-Zr system alloy etc..
(2) Sn coating
The Sn coating implementing reflow process it is formed with on the surface of copper or copper alloy bar.Sn coating directly or
Across substrate coating plating in substrate material surface.As substrate coating, can be Cu substrate coating, or press
The Cu/Ni double base coating of the order plating of Ni, Cu.The plating thickness of the Sn layer after reflow process
It it is 0.2～0.8 μm.It is preferably 0.3～0.7 μm, more preferably 0.4～0.6 μm.If the plating of Sn layer
Apply thickness too small, then the area ratio causing aftermentioned Cu-Sn alloy-layer is excessive, causes the Sn after reflow process
Surface roughness Ra and/or the RSm of the rolling right angle orientation of coating become excessive, it is impossible to obtain good table
Face gloss.On the contrary, if the plating thickness of Sn layer is excessive, the area ratio of the most aftermentioned Cu-Sn alloy-layer becomes
Too small, it is impossible to reduce insertion force.
(3) Cu-Sn system alloy-layer
If implement reflow process after described Sn plating, then matrix material and/or Cu substrate coating
Cu is diffused into Sn coating, forms Cu-Sn alloy-layer in the downside of Sn coating.It is generally of Cu6Sn5With/
Or Cu3The composition of Sn, but the composition of above-mentioned substrate plating can be comprised, with copper alloy for matrix material time
Addition element.
The crystal grain diameter of the Cu-Sn alloy-layer being exposed to the most surface of Sn-plated material is below 3 μm.Preferably
It is below 2.5 μm, more preferably below 2 μm.If crystal grain diameter is excessive, then after reflow process
The surface roughness Ra of rolling right angle orientation of Sn coating and/or RSm become excessive, it is impossible to obtain good
Good lustrous surface.The lower limit of crystal grain diameter can play the most special limit in the range of the effect of the present invention
System, but on manufacturing, it is difficult to less than 0.1 μm.
The area ratio of the Cu-Sn alloy-layer exposing the most surface to Sn-plated material is 5～40%.Be preferably 8～
35%, more preferably 10～30%.If area ratio is too small, then can not reduce insertion force.On the contrary,
If area ratio is excessive, then the surface roughness Ra of the rolling right angle orientation of the Sn coating after reflow process
And/or RSm becomes excessive, it is impossible to obtain good lustrous surface.
(4) surface roughness
The most surface of the Sn-plated material after reflow process, the surface roughness Ra of rolling right angle orientation is
Below 0.05 μm, RSm is below 20 μm.Preferably Ra is below 0.03 μm, and RSm is below 15 μm,
Further preferably Ra is below 0.02 μm, and RSm is below 12 μm.If the table of this rolling right angle orientation
Surface roughness Ra and/or RSm is excessive, then cannot obtain good lustrous surface.The lower limit of surface roughness
It is not particularly limited playing in the range of the effect of the present invention, but on manufacturing, Ra is difficult to be less than
0.001 μm, RSm is difficult to less than 1 μm.
(5) manufacture method
The Sn-plated material of embodiments of the present invention can be manufactured by following operation: at continuous plating production line,
After carrying out defat and pickling as the copper of matrix material or the surface of copper alloy bar, formed by galvanoplastic
Substrate coating, then passes through known galvanoplastic and forms Sn layer, finally implement reflow process, make Sn layer
Melted.Substrate coating can also be omitted.
Although Cu substrate plating can not be carried out, but in the case of carrying out Cu substrate plating, its thickness
It it is below 0.5 μm.It is preferably below 0.4 μm, below more preferably 0.35 μm.If thickness is excessive, then
The crystal grain diameter of the Cu-Sn alloy-layer exposed becomes excessive, the rolling right angle of the Sn coating after reflow process
The surface roughness Ra in direction and RSm become excessive, it is impossible to obtain good lustrous surface.
In order to improve thermostability, Ni substrate plating can be carried out before Cu substrate plating.In this situation
Under, the thickness of Ni substrate plating is not particularly limited, if but thickness is less than 0.05 μm, cannot play
The effect of Ni substrate plating, if greater than 3 μm, the most not only economy is bad, and can cause bending machining
The deterioration of property.Therefore the thickness of Ni substrate plating is preferably 0.05～3 μm.Additionally, after Ni substrate plating
The thickness of Cu substrate plating is not particularly limited, but if thickness is less than 0.05 μm or more than 0.5 μm,
Then can not play the effect of the Cu substrate plating after Ni substrate plating.Therefore the Cu base after Ni substrate plating
The thickness of end plating is preferably 0.05～0.5 μm.
The thickness of Sn plating is 0.5～1.5 μm.It is preferably 0.6～1.2 μm, more preferably 0.7～1.1 μm.
If the thickness of Sn plating is too small, then the thickness of the Sn layer after reflow process becomes too small, its result,
The area ratio of Cu-Sn alloy-layer becomes excessive, the table of the rolling right angle orientation of the Sn coating after reflow process
Surface roughness Ra and/or RSm becomes excessive, it is impossible to obtain good lustrous surface.On the contrary, if Sn
The thickness of plating becomes excessive, then the thickness of the Sn layer after reflow process becomes excessive, Cu-Sn alloy-layer
Area ratio become too small, it is impossible to reduce insertion force.
Reflow process is carried out by the following method: by Sn-plated material with in-furnace temperature 400～600 DEG C of heating
After 1～30 second, the cooling water of 20～90 DEG C of spraying out is to the surface of Sn-plated material, then by Sn-plated material
Put into the tank of 20～90 DEG C.
If heating-up temperature is less than 400 DEG C and/or heat time heating time was less than 1 second, then it is exposed to the Cu-Sn of most surface
The area ratio of alloy-layer is less than 5%, it is impossible to reduce insertion force.On the contrary, if heating-up temperature more than 600 DEG C and
/ or be more than 30 seconds heat time heating time, then the crystal grain diameter of the Cu-Sn alloy-layer being exposed to most surface is more than 3 μm,
Its area ratio is more than 40%, and the surface roughness Ra of rolling right angle orientation is big more than 0.05 μm and/or RSm
In 20 μm, it is impossible to obtain good lustrous surface.
And then, the reason of cooling water of spraying out after heating is as follows.The water particle sprayed out is attached to heated
The surface of plating material, makes this part be quenched, it is suppressed that the growth of Cu-Sn alloy-layer.On the other hand,
The part not having attached water particle is not quenched, and does not suppresses the growth of Cu-Sn alloy-layer.Accordingly, it is capable to
Plating surface after heating produces the difference of the rate of cooling of local, can make to be exposed to the surface of plating material
The crystal grain diameter granular of Cu-Sn alloy-layer.
[embodiment]
Following presentation embodiment, but it is not intended to limit the present invention by below example.
With tough pitch copper as raw material, cast out the casting that with the addition of each element with the ratio (quality %) shown in table 1
Block, at 900 DEG C of thickness 10mm that are hot-rolled down to carried out above, and after facing cut falls the oxide skin on surface, repeatedly
Carry out cold rolling and heat treatment, make the plate (matrix material) of thickness 0.2mm.
[table 1]
Table 1
| Matrix material | Ni | Si | Sn | Zn | P | Ti | Fe | Zr | Co | Gu |
| No.1 | 2.8 | 0.62 | 0.5 | 0.4 | - | - | - | - | - | Remainder |
| No.2 | 1.6 | 0.4 | 0.5 | 0.4 | - | - | - | - | - | Remainder |
| No.3 | - | 0.44 | - | - | - | - | - | - | 1.9 | Remainder |
| No.4 | - | - | - | 30 | - | - | - | - | - | Remainder |
| No.5 | - | - | 8 | - | 0.1 | - | - | - | - | Remainder |
| No.6 | - | - | 0.3 | 8 | - | - | - | - | - | Remainder |
| No.7 | - | - | - | - | - | - | - | 0.1 | - | Remainder |
| No.8 | - | - | - | - | - | 3 | 0.3 | - | - | Remainder |
"-" represents and is not added with
Then, after the surface of this matrix material is carried out defat and pickling, by galvanoplastic press Ni plating layer,
Cu plating layer sequentially form substrate coating, according to circumstances omit Ni substrate plating and Cu substrate plating,
Then pass through galvanoplastic and form Sn coating.Sulfuric acid bath (liquid temperature is utilized in the case of implementing Ni substrate plating
About 50 DEG C, electric current density 5A/dm2) electroplate, the thickness of Ni substrate plating is 0.3 μm.Implement Cu
Sulfuric acid bath (liquid temperature about 25 DEG C, electric current density 30A/dm is utilized in the case of substrate plating2) electroplate.
Sn plating utilizes phenolsulfonic acid to bathe (liquid temperature about 35 DEG C, electric current density 12A/dm2) electroplate.Cu substrate
Each plating thickness of plating and Sn plating is adjusted by adjusting electrodeposition time.
Then, after heating 1～30 second in being heated to the stove of 350～650 DEG C, by the cooling water of 70 DEG C with mist
Shape sprays, and puts into the tank of 70 DEG C afterwards.In a part of embodiment, after heating, do not carry out vaporific water
The cold tank just putting into 70 DEG C.
For each Sn-plated material so obtained, carry out the evaluation of all characteristics.
(1) Sn plating thickness
Use CT-1 type electrolytic film thickness gauge (Co., Ltd.'s electrical measurement manufactures), measure the thickness of Sn coating.
(2) surface roughness
Use Laser Scanning Confocal Microscope (HD100 that Lasertec (strain) society manufactures), mark according to JIS B 0601
The surface roughness Ra of the accurate rolling right angle orientation measuring Sn-plated material and RSm.
(3) area ratio of the Cu-Sn alloy-layer on surface it is exposed to
Use FE-SEM (XL30SFEG that Japan FEI (strain) manufactures), observe with the multiplying powers of 750 times
0.017mm2The reflection electronic picture in the visual field.It is exposed to the Cu-Sn alloy-layer on surface compared with Sn layer in dark
Image, therefore by this as binaryzation, calculate area ratio by obtaining the area of Cu-Sn alloy-layer.Two
Value is by being set as that 170 are carried out in altitude range (height range) 255.
(4) crystal grain diameter of the Cu-Sn alloy-layer of most surface it is exposed to
Use FE-SEM (XL30SFEG that Japan FEI (strain) manufactures), see with the multiplying powers of 2000 times
Examine the reflection electronic picture of the Cu-Sn alloy-layer exposed.Afterwards, randomly choose 10 Cu-Sn alloy-layers, point
Do not obtain the maximum diameter of a circle comprising each Cu-Sn alloy-layer, using 10 maximum diameter of a circle meansigma methodss as
The crystal grain diameter of Cu-Sn alloy-layer.
(5) lustrous surface
Use digital varied angle vancometer (VG-1D that Japan's electrical measurement industry (strain) manufactures), measure
The specular reflectivity of Sn-plated material.As it is shown in figure 1, from light-projecting portion with 30 ° of incident light of angle of incidence, in light
The light reflected at Sn-plated material is detected in portion with angle 30 °, thus measures the specular reflectivity of Sn-plated material.From
Light-projecting portion is directly 100% by specular reflectivity during light, the therefore surface of the highest then Sn-plated material of this numerical value
Gloss is the best.
(6) coefficient of kinetic friction
The evaluating and measuring coefficient of kinetic friction as insertion force.As in figure 2 it is shown, by the plate test portion of Sn-plated material
It is fixed on test portion platform, and its plating Sn face load W is pressed contact.Then, make mobile station along level side
To movement, measured the resistant load F now acting on contact by ergometer.Further, calculated by μ=F/W
Set out coefficientoffrictionμ.
W is 4.9N, and the sliding speed (translational speed of test portion platform) of contact is 50mm/min.Slip edge
The direction parallel relative to the rolling direction of plate test portion is carried out.Sliding distance is 100mm, during obtaining this
The meansigma methods of F.
Contact uses the Sn-plated material identical with above-mentioned plate test portion, makes as shown in Figure 3.That is, will be straight
The stainless steel ball of footpath 7mm presses on test portion, and the part contacted with plate test portion is configured to hemispherical.
Implement shown in such as table 2 and table 3.Fig. 4 is the SEM on the surface of the Sn-plated material of example 4
Reflection electronic picture.Most surface at Sn-plated material is exposed fine Cu-Sn alloy-layer.
[table 2]
Table 2
"-" represents plating is not carried out
[table 3]
Table 3
For example 1～35, the thickness of the Sn coating after Reflow Soldering is 0.2～0.8 μm, plates Sn material
The surface roughness Ra of the rolling right angle orientation of material is below 0.05 μm, and RSm is below 20 μm,
The area ratio of the Cu-Sn alloy-layer being exposed to most surface is 5～40%, exposes described in when surface observation
The crystal grain diameter of Cu-Sn alloy-layer be below 3 μm.The specular reflectivity of these Sn-plated materials is 70%
Above, good lustrous surface, the coefficient of kinetic friction as little as less than 0.5 can be obtained.That is, low plug has been had concurrently
With good lustrous surface.
Sn plating thickness when comparative example 1 is plating is less than the example of 0.5 μm.Sn thickness after Reflow Soldering
Degree is more than 40% less than 0.2 μm, the area ratio of the Cu-Sn alloy-layer being exposed to most surface, rolls right angle side
To Ra more than 0.05 μm, specular reflectivity is less than 70%.
Sn plating thickness when comparative example 2 is plating is more than the example of 1.5 μm.Sn thickness after Reflow Soldering
Degree is more than 0.8 μm, and the area ratio of the Cu-Sn alloy-layer being exposed to most surface is 0%, i.e. Cu-Sn alloy-layer
Not exposing, its coefficient of kinetic friction is more than 0.5.
Cu substrate plating thickness when comparative example 3 is plating is more than the example of 0.5 μm.It is exposed to most surface
The crystal grain diameter of Cu-Sn alloy-layer is more than 3 μm, and Ra is more than 0.05 μm, and RSm is more than 20 μm, and minute surface is anti-
Rate of penetrating is less than 70%.
Comparative example 4 is the furnace temperature of the reflow process example less than 400 DEG C, and comparative example 6 is reflow process
Heat time heating time is less than the example of 1 second.The area ratio of both Cu-Sn alloy-layers being exposed to most surface is the least
In 5%, the coefficient of kinetic friction is all higher than 0.5.
Comparative example 5 is the furnace temperature of the reflow process example more than 600 DEG C, and comparative example 7 is reflow process
The example that heat time heating time is more than 30 seconds.Sn layer thickness after both Reflow Solderings is respectively less than 0.2 μm, is exposed to
The area ratio of the Cu-Sn alloy-layer of most surface is all higher than 40%, and crystal grain diameter is all higher than 3 μm, rolls right angle
The Ra in direction is all higher than 0.05 μm, and RSm is all higher than 20 μm, and specular reflectivity is respectively less than 70%.
Comparative example 8～11 is the example that vaporific water-cooled is not carried out.It is exposed to the Cu-Sn alloy-layer of most surface
Area ratio is all higher than 5%, and the coefficient of kinetic friction is less than 0.5, all right, but is exposed to the Cu-Sn of most surface
The crystal grain diameter of alloy-layer is more than 3 μm, and surface roughness Ra is more than 0.05 μm, and RSm is more than 20 μm, mirror
Face reflectance is less than 70%.I.e., it is impossible to have low plug and good lustrous surface concurrently.
Claims (5)
1. a Sn-plated material, it is characterised in that
The matrix material of copper or copper alloy bar has the Sn coating implementing reflow process,
Reflow Soldering Sn coating is made up of the Sn layer of upside and the Cu-Sn alloy-layer of downside, the thickness of Sn coating
Being 0.2～0.8 μm, the surface roughness Ra of the rolling right angle orientation of Sn-plated material is below 0.05 μm,
RSm is below 20 μm, and the area ratio of the Cu-Sn alloy-layer being exposed to most surface is 5～40%, from surface
The crystal grain diameter of the Cu-Sn alloy-layer exposed described in during observation is below 3 μm.
Sn-plated material the most according to claim 1, wherein,
The matrix material of copper or copper alloy bar is coated with Cu substrate coating or Ni substrate coating or incites somebody to action
Ni and Cu has carried out the Ni/Cu double base coating of stacking in the order, has back on this substrate coating
Fluid welding Sn coating.
3. the manufacture method of a Sn-plated material, it is characterised in that
On the matrix material of copper or copper alloy bar, forming Sn coating or forming Cu, Sn coating in order
After, by reflow process, matrix material forms Sn layer across Cu-Sn alloy-layer,
The thickness making described Cu coating is 0～0.5 μm, and the thickness of described Sn coating is 0.5～1.5 μm,
In described reflow process with temperature 400～600 DEG C of heating 1～30 second after, the cooling of 20～90 DEG C of spraying out
Water, then puts into the tank to 20～90 DEG C.
4. the manufacture method of a Sn-plated material, it is characterised in that
After the matrix material of copper or copper alloy bar forms Ni, Cu, Sn coating in order, pass through Reflow Soldering
Process, matrix material covers Ni substrate coating or Ni/Cu double base coating, across Cu-Sn alloy
Layer forms Sn layer,
The thickness making described Ni coating is 0.05～3 μm, and the thickness of described Cu coating is 0.05～0.5 μm,
The thickness of described Sn coating is 0.5～1.5 μm, with temperature 400～600 DEG C of heating in described reflow process
After 1～30 second, the cooling water of 20～90 DEG C of spraying out, then put into the tank to 20～90 DEG C.
5. an electronic component, it possesses the Sn-plated material described in claim 1 or 2.
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| JP2015-034239 | 2015-02-24 | ||
| JP2015034239A JP5984980B2 (en) | 2015-02-24 | 2015-02-24 | Sn plating material for electronic parts |
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| CN105908231A true CN105908231A (en) | 2016-08-31 |
| CN105908231B CN105908231B (en) | 2018-05-29 |
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| JP (1) | JP5984980B2 (en) |
| KR (1) | KR101838370B1 (en) |
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| CN111009759A (en) * | 2019-12-23 | 2020-04-14 | 苏州威贝斯特电子科技有限公司 | Terminal composition and product for socket connector thereof |
| CN115175466A (en) * | 2022-07-04 | 2022-10-11 | 江苏富乐华半导体科技股份有限公司 | Welding method for improving electroplating tin-nickel alloy on surface of ceramic copper-clad substrate |
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| JP6423025B2 (en) * | 2017-01-17 | 2018-11-14 | 三菱伸銅株式会社 | Tin-plated copper terminal material excellent in insertion / removability and manufacturing method thereof |
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Also Published As
| Publication number | Publication date |
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| TW201634706A (en) | 2016-10-01 |
| KR101838370B1 (en) | 2018-03-13 |
| JP5984980B2 (en) | 2016-09-06 |
| KR20160103510A (en) | 2016-09-01 |
| JP2016156050A (en) | 2016-09-01 |
| CN105908231B (en) | 2018-05-29 |
| TWI589714B (en) | 2017-07-01 |
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