JP5640922B2 - Tin-plated copper alloy terminal material with excellent insertability - Google Patents
Tin-plated copper alloy terminal material with excellent insertability Download PDFInfo
- Publication number
- JP5640922B2 JP5640922B2 JP2011189193A JP2011189193A JP5640922B2 JP 5640922 B2 JP5640922 B2 JP 5640922B2 JP 2011189193 A JP2011189193 A JP 2011189193A JP 2011189193 A JP2011189193 A JP 2011189193A JP 5640922 B2 JP5640922 B2 JP 5640922B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- less
- thickness
- plating layer
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Electroplating Methods And Accessories (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Description
本発明は、自動車や民生機器等の電気配線の接続に使用されるコネクタ用端子、特に多ピンコネクタ用の端子として有用な錫めっき銅合金端子材に関する。 TECHNICAL FIELD The present invention relates to a tin-plated copper alloy terminal material useful as a connector terminal used for connecting electrical wiring of automobiles, consumer devices, etc., particularly as a terminal for a multi-pin connector.
錫めっき銅合金端子材は、銅合金からなる基材の上にＣｕめっき及びＳｎめっきを施した後にリフロー処理することにより、表層のＳｎ系表面層の下層にＣｕＳｎ合金層が形成されたものであり、端子材として広く用いられている。
近年、例えば自動車おいては急速に電装化が進行し、これに伴い電気機器の回路数が増加するため、使用するコネクタの小型・多ピン化が顕著になっている。コネクタが多ピン化すると、単ピンあたりの挿入力は小さくても、コネクタを挿着する際にコネクタ全体では大きな力が必要となり、生産性の低下が懸念されている。そこで、錫めっき銅合金材の摩擦係数を小さくして単ピンあたりの挿入力を低減することが試みられている。
The tin-plated copper alloy terminal material is a material in which a CuSn alloy layer is formed under the Sn-based surface layer of the surface layer by performing reflow treatment after applying Cu plating and Sn plating on a copper alloy base material. Yes, it is widely used as a terminal material.
2. Description of the Related Art In recent years, for example, automobiles have rapidly become electrically equipped, and the number of circuits of electrical equipment increases accordingly. Therefore, miniaturization and increase in the number of pins of connectors used have become prominent. When the number of connectors is increased, even if the insertion force per single pin is small, a large force is required for the entire connector when the connector is inserted, and there is a concern that the productivity is lowered. Therefore, attempts have been made to reduce the insertion force per single pin by reducing the friction coefficient of the tin-plated copper alloy material.
例えば、基材を粗らして、ＣｕＳｎ合金層の表面露出度を規定したもの（特許文献１）があるが、接触抵抗が増大する、ハンダ濡れ性が低下するといった問題があった。また、ＣｕＳｎ合金層の平均粗さを規定したもの（特許文献２）もあるが、さらなる挿抜性向上のため例えば動摩擦係数を０．３以下にすることができないといった問題があった。 For example, there is a material (Patent Document 1) in which the substrate is roughened and the surface exposure degree of the CuSn alloy layer is defined (Patent Document 1), but there are problems that the contact resistance increases and the solder wettability decreases. Moreover, although there exists what prescribed | regulated the average roughness of a CuSn alloy layer (patent document 2), there existed a problem that a dynamic friction coefficient could not be 0.3 or less, for the further improvement of insertion / extraction, for example.
錫めっき銅合金端子材の摩擦係数を低減させるには、表層のＳｎ層を薄くし、Ｓｎに比べ硬いＣｕＳｎ合金層の一部を表層に露出させると摩擦係数を非常に小さくすることができる。しかしながら、表層にＣｕＳｎ合金層が露出するとＣｕ酸化物が表層に形成され、その結果接触抵抗の増大、はんだ濡れ性の低下を引き起こしてしまう。またＣｕＳｎ合金層の平均粗さを制御しても動摩擦係数を０．３以下にまで低減することはできない問題があった。 In order to reduce the friction coefficient of the tin-plated copper alloy terminal material, the friction coefficient can be made very small by thinning the surface Sn layer and exposing a part of the CuSn alloy layer harder than Sn to the surface layer. However, when the CuSn alloy layer is exposed on the surface layer, Cu oxide is formed on the surface layer, resulting in an increase in contact resistance and a decrease in solder wettability. Further, there is a problem that even if the average roughness of the CuSn alloy layer is controlled, the dynamic friction coefficient cannot be reduced to 0.3 or less.
本発明は、前述の課題に鑑みてなされたものであって、優れた電気接続特性を発揮しながら動摩擦係数を０．３以下にまで低減して、挿抜性に優れた錫めっき銅合金端子材を提供することを目的とする。 The present invention has been made in view of the above-described problems, and has a tin-plated copper alloy terminal material that is excellent in insertion / removal by reducing the dynamic friction coefficient to 0.3 or less while exhibiting excellent electrical connection characteristics. The purpose is to provide.
本発明者らは鋭意研究した結果、表層のＳｎ層が薄く、その表面にわずかに下層のＣｕＳｎ層が露出していることは、動摩擦係数の低下に有利であるとの認識の下、Ｓｎ層が薄くなることによる電気接続特性の低下を抑制するためには、ＣｕＳｎ合金層の表面露出を限られた範囲に制御することが必要であり、そのためには、Ｓｎ層とその下層のＣｕＳｎ層との界面の形状が重要であるとの知見に至った。つまり、動摩擦係数は、表面から数百ｎｍの深さの範囲の構造が大きな影響を与えており、研究の結果、表層付近をＳｎとＣｕＳｎの複合構造とすると、硬いＣｕＳｎ合金層の間にある軟らかいＳｎが潤滑剤の作用を果たし動摩擦係数が下がることを見出した。この場合、Ｓｎ層とＣｕＳｎ層との界面の凹凸形状が尖鋭であることが重要であり、その界面形状として尖り度Ｒｋｕに着目した。また、好ましい尖り度Ｒｋｕを得るためには、Ｎｉ及びＳｉの存在が重要であることも見出した。これらの知見の下、以下の解決手段とした。 As a result of intensive studies, the present inventors have recognized that the fact that the surface Sn layer is thin and the lower CuSn layer is slightly exposed on the surface is advantageous in reducing the dynamic friction coefficient. In order to suppress the deterioration of the electrical connection characteristics due to thinning, it is necessary to control the surface exposure of the CuSn alloy layer to a limited range. For that purpose, the Sn layer and the CuSn layer below it are It came to the knowledge that the shape of the interface is important. In other words, the dynamic friction coefficient is greatly affected by the structure in the range of several hundreds of nanometers from the surface. As a result of research, if the surface layer has a composite structure of Sn and CuSn, it is between the hard CuSn alloy layers. It has been found that soft Sn acts as a lubricant to lower the dynamic friction coefficient. In this case, it is important that the concavo-convex shape of the interface between the Sn layer and the CuSn layer is sharp, and attention is paid to the sharpness Rku as the interface shape. It has also been found that the presence of Ni and Si is important for obtaining a preferable kurtosis Rku. Based on these findings, the following solutions were adopted.
すなわち、本発明の錫めっき銅合金端子材は、Ｃｕ合金からなる基材上の表面にＳｎ系表面層が形成され、該Ｓｎ系表面層と前記基材との間にＣｕＳｎ合金層が形成された錫めっき銅合金端子材であって、前記ＣｕＳｎ合金層は、Ｃｕ６Ｓｎ５を主成分とし、該Ｃｕ６Ｓｎ５のＣｕの一部がＮｉ及びＳｉに置換した化合物を前記基材側界面付近に有する合金層であり、前記ＣｕＳｎ合金層の尖り度Ｒｋｕが３を超え、かつ前記Ｓｎ系表面層の平均厚みが０．２μｍ以上０．４μｍ以下であり、前記Ｓｎ系表面層の表面に露出する前記ＣｕＳｎ合金層の面積率が１０〜４０％であり、動摩擦係数が０．３以下であることを特徴とする。 That is, in the tin-plated copper alloy terminal material of the present invention, an Sn-based surface layer is formed on the surface of a substrate made of Cu alloy, and a CuSn alloy layer is formed between the Sn-based surface layer and the substrate. A tin-plated copper alloy terminal material, wherein the CuSn alloy layer is composed of Cu 6 Sn 5 as a main component, and a compound in which a part of Cu of the Cu 6 Sn 5 is substituted with Ni and Si is the base-side interface. The CuSn alloy layer has a kurtosis Rku of more than 3, and the Sn-based surface layer has an average thickness of 0.2 μm or more and 0.4 μm or less on the surface of the Sn-based surface layer. The exposed CuSn alloy layer has an area ratio of 10 to 40% and a dynamic friction coefficient of 0.3 or less.
ＣｕＳｎ合金層の尖り度Ｒｋｕが３を超え、かつＳｎ系表面層の平均厚みを０．２μｍ以上０．４μｍ以下、Ｓｎ系表面層の表面におけるＣｕＳｎ合金層の露出面積率を１０〜４０％とすることで動摩擦係数の０．３以下を実現することができ、この場合、ＣｕＳｎ合金層の下部に形成されるＣｕの一部がＮｉ及びＳｉに置換した（Ｃｕ，Ｎｉ，Ｓｉ）６Ｓｎ５合金の存在により、ＣｕＳｎ合金層の凹凸を尖鋭にしてＲｋｕが３を超え、表面に露出する面積率を限られた範囲に抑制している。
ＣｕＳｎ合金層の尖り度Ｒｋｕが３以下ではＣｕＳｎ間に存在するＳｎが少なく、動摩擦係数を０．３以下とすることができない。
The sharpness Rku of the CuSn alloy layer exceeds 3, the average thickness of the Sn-based surface layer is 0.2 μm or more and 0.4 μm or less, and the exposed area ratio of the CuSn alloy layer on the surface of the Sn-based surface layer is 10 to 40%. Thus, a coefficient of dynamic friction of 0.3 or less can be realized. In this case, a part of Cu formed under the CuSn alloy layer is replaced with Ni and Si (Cu, Ni, Si) 6 Sn 5 Due to the presence of the alloy, the unevenness of the CuSn alloy layer is sharpened, Rku exceeds 3, and the area ratio exposed on the surface is suppressed to a limited range.
When the kurtosis degree Rku of the CuSn alloy layer is 3 or less, Sn existing between CuSn is small, and the dynamic friction coefficient cannot be made 0.3 or less.
Ｓｎ系表面層の平均厚みが０．２μｍ以上０．４μｍ以下としたのは、０．２μｍ未満でははんだ濡れ性の低下、電気的接続信頼性の低下を招き、０．４μｍを超えると表層をＳｎとＣｕＳｎの複合構造とすることができず、Ｓｎだけで占められるので動摩擦係数が増大するためである。
Ｓｎ系表面層の表面におけるＣｕＳｎ合金層の露出面積率が１０％未満では動摩擦係数を０．３以下とすることができず、４０％を超えると、はんだ濡れ性等の電気接続特性が低下する。より好ましい面積率は、１０〜３０％である。
The average thickness of the Sn-based surface layer is set to 0.2 μm or more and 0.4 μm or less because when it is less than 0.2 μm, solder wettability and electrical connection reliability are deteriorated. This is because the composite structure of Sn and CuSn cannot be obtained, and the dynamic friction coefficient increases because it is occupied only by Sn.
If the exposed area ratio of the CuSn alloy layer on the surface of the Sn-based surface layer is less than 10%, the dynamic friction coefficient cannot be 0.3 or less, and if it exceeds 40%, the electrical connection characteristics such as solder wettability are deteriorated. . A more preferable area ratio is 10 to 30%.
本発明の錫めっき銅合金端子材において、前記基材が、０．５〜５質量％のＮｉ及び０．１〜１．５質量％のＳｉを含有し、残部がＣｕ及び不可避不純物から構成されるものであるとよい。
基材を０．５〜５質量％のＮｉ及び０．１〜１．５質量％のＳｉ含有と規定したのは、リフロー処理により形成されるＣｕＳｎ系合金層の尖り度Ｒｋｕが３を超えるためには、リフロー時に基材よりＮｉ及びＳｉが供給され、ＣｕＳｎ合金層中にＮｉ及びＳｉが固溶することが必要なためである。Ｎｉが０．５質量％未満、Ｓｉが０．１質量％未満では、それぞれＮｉ又はＳｉの効果が現れず、Ｎｉが５質量％を越えると鋳造や熱間圧延時に割れを生じるおそれがあり、Ｓｉが１．５質量％を超えると導電性が低下してしまうためである。この場合、ＣｕＳｎ合金層との界面側では、Ｎｉ及びＳｉがＣｕＳｎ合金層に供給されるため、含有量が若干低下した状態となっている。
In the tin-plated copper alloy terminal material of the present invention, the base material contains 0.5 to 5% by mass of Ni and 0.1 to 1.5% by mass of Si, and the balance is composed of Cu and inevitable impurities. It should be good.
The reason why the base material is defined as containing 0.5 to 5% by mass of Ni and 0.1 to 1.5% by mass of Si is that the kurtosis degree Rku of the CuSn-based alloy layer formed by the reflow process exceeds 3. This is because Ni and Si are supplied from the base material at the time of reflow, and Ni and Si need to be dissolved in the CuSn alloy layer. If Ni is less than 0.5% by mass and Si is less than 0.1% by mass, the effect of Ni or Si does not appear, and if Ni exceeds 5% by mass, cracking may occur during casting or hot rolling. This is because when Si exceeds 1.5% by mass, the conductivity is lowered. In this case, since Ni and Si are supplied to the CuSn alloy layer on the interface side with the CuSn alloy layer, the content is slightly reduced.
本発明の錫めっき銅合金端子材において、前記基材が、更にＺｎ、Ｓｎ、Ｆｅ、Ｍｇの群から選ばれた１種以上を合計で５質量％以下含有してもよい。
Ｚｎ、Ｓｎは、強度、耐熱性向上のために添加するとよく、また、Ｆｅ、Ｍｇは、応力緩和特性向上のために添加するとよいが、合計で５質量％を超えると導電率が低下するので好ましくない。
In the tin-plated copper alloy terminal material of the present invention, the base material may further contain a total of 5% by mass or less of one or more selected from the group consisting of Zn, Sn, Fe, and Mg.
Zn and Sn should be added to improve strength and heat resistance, and Fe and Mg should be added to improve stress relaxation characteristics. However, if the total exceeds 5% by mass, the conductivity will decrease. It is not preferable.
本発明の錫めっき銅合金端子材の製造方法は、Ｃｕ合金からなる基材上に、Ｃｕめっき層及びＳｎめっき層をこの順で形成した後に、リフロー処理することにより、前記基材の上にＣｕＳｎ合金層を介してＳｎ系表面層を形成した錫めっき銅合金端子材を製造する方法であって、前記基材として、０．５〜５質量％のＮｉ、０．１〜１．５質量％のＳｉを含有し、残部がＣｕ及び不可避不純物から構成されるものを用い、前記Ｃｕめっき層の厚みを０．１５μｍ以上０．３μｍ未満とし、前記Ｓｎめっき層の厚みと前記Ｃｕめっき層の厚みの合計が０．８μｍ以上１．１μｍ未満とし、前記リフロー処理を基材の表面温度が２４０〜３６０℃になるまで昇温後、当該温度に以下の（１）〜（３）に示す時間保持した後急冷することにより行うことを特徴とする銅合金端子材の製造方法。
（１）Ｓｎめっき層の厚みが０．７μｍ未満に対して、Ｃｕめっき層の厚みが０．１５μｍ以上０．２５μｍ未満の場合は６〜９秒、Ｃｕめっき層の厚みが０．２５μｍ以上０．３０μｍ未満の場合は６〜１２秒
（２）Ｓｎめっき層の厚みが０．７μｍ以上０．９μｍ未満に対して、Ｃｕめっき層の厚みが０．１５μｍ以上０．２０μｍ未満の場合は６〜９秒、Ｃｕめっき層の厚みが０．２０μｍ以上０．２５μｍ未満の場合は６〜１２秒、Ｃｕめっき層の厚みが０．２５μｍ以上０．３０μｍ未満の場合は９〜１２秒
（３）Ｓｎめっき層の厚みが０．９μｍ以上で、Ｃｕめっき層の厚みが０．１５μｍ以上０．２５μｍ未満の場合は６〜１２秒
The manufacturing method of the tin-plated copper alloy terminal material of the present invention comprises a Cu-plated layer and a Sn-plated layer formed in this order on a substrate made of a Cu alloy, and then reflow-treated on the substrate. A method for producing a tin-plated copper alloy terminal material in which a Sn-based surface layer is formed via a CuSn alloy layer, wherein the base material is 0.5 to 5 mass% Ni, 0.1 to 1.5 mass % of containing Si, used as the remaining portion is composed of Cu and unavoidable impurities, the thickness of the Cu plating layer is less than 0.3μm or 0.15 [mu] m, the Cu plating layer and the thickness of the Sn plating layer The total thickness of the substrate is 0.8 μm or more and less than 1.1 μm, and after the temperature of the reflow treatment is increased until the surface temperature of the base material becomes 240 to 360 ° C., the temperature is shown in the following (1) to (3) this carried out by rapidly cooling after the retention time Method for producing a copper alloy material for terminal according to claim.
(1) Whereas the thickness of the Sn plating layer is less than 0.7 μm, when the thickness of the Cu plating layer is 0.15 μm or more and less than 0.25 μm, the thickness is 6 to 9 seconds, and the thickness of the Cu plating layer is 0.25 μm or more and 0 .6-12 seconds for less than 30 μm
(2) When the thickness of the Sn plating layer is 0.7 μm or more and less than 0.9 μm, when the thickness of the Cu plating layer is 0.15 μm or more and less than 0.20 μm, the thickness of the Cu plating layer is 0 to 6-9 seconds. .6 to 12 seconds when the thickness is 20 μm or more and less than 0.25 μm, and 9 to 12 seconds when the thickness of the Cu plating layer is 0.25 μm or more and less than 0.30 μm
(3) 6-12 seconds when the thickness of the Sn plating layer is 0.9 μm or more and the thickness of the Cu plating layer is 0.15 μm or more and less than 0.25 μm
前述したように基材にＮｉ及びＳｉを含有することにより、リフロー処理後のＣｕＳｎ合金層の下部に（Ｃｕ，Ｎｉ，Ｓｉ）６Ｓｎ５合金を介在させ、これによりＣｕＳｎ合金層の凹凸が尖鋭になって尖り度Ｒｋｕが３を超えることができる。Ｃｕめっき層の厚みが０．１５μｍ未満では、基材から供給されるＮｉ及びＳｉの影響が大きくなり、場所によりバラツキが大きく、安定した動摩擦係数、外観(光沢度)が得られなくなり、０．３μｍ以上では、基材からのＮｉがＣｕＳｎ合金層に供給されにくいために、尖がり度Ｒｋｕが３を超えることが難しくなる。Ｓｎめっき層の厚みとＣｕめっき層の厚みの合計が０．８μｍ未満であると、リフロー後のＳｎ系表面層が薄くなって電気接続特性が損なわれ、１．１μｍ以上であると、表面へのＣｕＳｎ合金層の露出が少なくなって動摩擦係数を０．３以下にすることが難しい。リフロー処理においては、基材の表面温度が２４０〜３６０℃になるまで昇温後、当該温度に（１）〜（３）で示した６〜１２秒間保持した後、急冷することが重要である。この場合、保持時間はＣｕめっき層及びＳｎめっき層のそれぞれの厚みに応じて６〜１２秒の範囲で適切な時間があり、めっき厚が薄いほど保持時間は少なく、厚くなると長い保持時間が必要になる。２４０℃未満あるいは保持時間が短すぎる場合にはＣｕＳｎ合金の成長が進まず所望の形状をしたＣｕＳｎ合金層を得ることができず、３６０℃を超えあるいは保持時間が長すぎるとＣｕＳｎ合金が成長し過ぎて表面への露出率が大きくなり過ぎ、またＳｎ系表面層の酸化が進行して好ましくない。
また、前記基材として、更にＺｎ、Ｓｎ、Ｆｅ、Ｍｇの群から選ばれた１種以上を合計で５質量％以下含有するものを用いてもよい。
As described above, by containing Ni and Si in the base material, (Cu, Ni, Si) 6 Sn 5 alloy is interposed under the CuSn alloy layer after the reflow treatment, whereby the unevenness of the CuSn alloy layer is sharpened. Thus, the sharpness Rku can exceed 3. When the thickness of the Cu plating layer is less than 0.15 μm, the influence of Ni and Si supplied from the base material becomes large, the variation varies depending on the place, and a stable dynamic friction coefficient and appearance (glossiness) cannot be obtained. When the thickness is 3 μm or more, Ni from the base material is difficult to be supplied to the CuSn alloy layer, and thus it becomes difficult for the sharpness Rku to exceed 3. When the total thickness of the Sn plating layer and the Cu plating layer is less than 0.8 μm, the Sn-based surface layer after reflow is thinned and the electrical connection characteristics are impaired. It is difficult to reduce the coefficient of dynamic friction to 0.3 or less because the exposure of the CuSn alloy layer is reduced. In the reflow treatment, it is important that the temperature of the base material is raised until the surface temperature reaches 240 to 360 ° C., then held at the temperature for 6 to 12 seconds as indicated by (1) to (3), and then rapidly cooled. . In this case, the holding time is an appropriate time in the range of 6 to 12 seconds depending on the thickness of each of the Cu plating layer and the Sn plating layer. The thinner the plating thickness, the shorter the holding time. I need it. If the temperature is less than 240 ° C. or the holding time is too short, the growth of the CuSn alloy does not proceed, and a CuSn alloy layer having a desired shape cannot be obtained. If the temperature exceeds 360 ° C. or the holding time is too long, the CuSn alloy grows. Therefore, the exposure rate to the surface becomes too large, and the oxidation of the Sn-based surface layer proceeds, which is not preferable.
Moreover, you may use what further contains 1 mass or more chosen from the group of Zn, Sn, Fe, Mg as a said base material 5 mass% or less in total.
本発明によれば、動摩擦係数を低減したので、低接触抵抗、良好なはんだ濡れ性と低挿抜性を両立させることができ、小型端子に最適である。特に、自動車および電子部品等に使用される端子において、接合時の低い挿入力、安定した接触抵抗、良好なはんだ濡れ性を必要とする部位において優位性を持つ。 According to the present invention, since the dynamic friction coefficient is reduced, it is possible to achieve both low contact resistance, good solder wettability and low insertion / removability, and is optimal for a small terminal. In particular, terminals used in automobiles and electronic components have superiority in parts that require low insertion force, stable contact resistance, and good solder wettability during bonding.
本発明の一実施形態の錫めっき銅合金端子材を説明する。
本実施形態の錫めっき銅合金端子材は、銅合金からなる基材の上に、Ｓｎ系表面層が形成され、Ｓｎ系表面層と基材との間にＣｕＳｎ合金層が形成されている。
基材は、Ｃｕ−Ｎｉ−Ｓｉ系合金、Ｃｕ−Ｎｉ−Ｓｉ−Ｚｎ系合金等、Ｎｉ及びＳｉを含有し、更に必要に応じてＺｎ、Ｓｎ、Ｆｅ、Ｍｇの群から選ばれた１種以上を合計で５質量％以下含有し、残部がＣｕ及び不可避不純物から構成される銅合金である。Ｎｉ及びＳｉを必須成分としたのは、後述するリフロー処理により形成されるＣｕＳｎ合金層の尖がり度を３を越えて形成するためには、リフロー時に基材よりＮｉ及びＳｉが供給され、ＣｕＳｎ合金層中にＮｉ及びＳｉが固溶することが必要なためである。基材中のＮｉの含有量としては０．５〜５質量％が、Ｓｉの含有量としては０．１〜１．５質量％が好ましい。Ｎｉが０．５質量％未満ではＮｉの効果、Ｓｉが０．１質量％未満ではＳｉの効果がそれぞれ現れず、Ｎｉが５質量％を越えると鋳造や熱間圧延時に割れを生じるおそれがあり、Ｓｉが１．５質量％を超えると導電性が低下するためである。
The tin plating copper alloy terminal material of one Embodiment of this invention is demonstrated.
In the tin-plated copper alloy terminal material of this embodiment, an Sn-based surface layer is formed on a base material made of a copper alloy, and a CuSn alloy layer is formed between the Sn-based surface layer and the base material.
The base material contains Ni and Si, such as a Cu—Ni—Si based alloy, a Cu—Ni—Si—Zn based alloy, and is further selected from the group of Zn, Sn, Fe, and Mg as required. The total is 5% by mass or less in total, and the balance is a copper alloy composed of Cu and inevitable impurities. The reason why Ni and Si are essential components is that Ni and Si are supplied from the base material during reflow in order to form a CuSn alloy layer formed by reflow processing described later with a sharpness exceeding 3; This is because Ni and Si need to be dissolved in the alloy layer. The Ni content in the substrate is preferably 0.5 to 5% by mass, and the Si content is preferably 0.1 to 1.5% by mass. If Ni is less than 0.5% by mass, the effect of Ni will not occur, and if Si is less than 0.1% by mass, the effect of Si will not appear. If Ni exceeds 5% by mass, cracking may occur during casting or hot rolling. This is because when Si exceeds 1.5% by mass, the conductivity is lowered.
また、Ｚｎ、Ｓｎは、強度、耐熱性向上させ、Ｆｅ、Ｍｇは、応力緩和特性を向上させる。これらＺｎ、Ｓｎ、Ｆｅ、Ｍｇのいずれか１種以上を添加する場合は、その合計の含有量が５質量％を超えると導電性が低下するので好ましくない。特に、Ｚｎ、Ｓｎ、Ｆｅ、Ｍｇの両方を含むことが好ましい。 Zn and Sn improve strength and heat resistance, and Fe and Mg improve stress relaxation characteristics. In the case of adding any one or more of these Zn, Sn, Fe, and Mg, if the total content exceeds 5% by mass, the conductivity decreases, which is not preferable. In particular, it is preferable to contain both Zn, Sn, Fe, and Mg.
ＣｕＳｎ合金層は、後述するように基材の上にＣｕめっき層とＳｎめっき層とを形成してリフロー処理することにより形成されたものであり、その大部分はＣｕ６Ｓｎ５であるが、基材との界面付近に、基材中のＮｉ及びＳｉとＣｕの一部が置換した（Ｃｕ，Ｎｉ，Ｓｉ）６Ｓｎ５合金が薄く形成される。また、このＣｕＳｎ合金層とＳｎ系表面層との界面は、凹凸状に形成され、尖がり度が３を超えて形成される。
ＪＩＳ Ｂ０６０１で規定される尖がり度Ｒｋｕは、測定対象物表面の基準長さｌｒにおけるころがり円うねり曲線Ｚ（ｘ）の四乗平均を二乗平均平方根高さ（Ｒｑ）の四乗によって無次元したもので、次式で表わされる。表面の鋭さの尺度で高さ分布の広がりを特徴づけるものであり、Ｒｋｕが３以下のときは表面凹凸の高さ分布が潰れているような形状をしており、Ｒｋｕが３を超えるときは高さ分布が尖っていることを示す。
The CuSn alloy layer is formed by forming a Cu plating layer and a Sn plating layer on a base material and performing a reflow treatment as will be described later. Most of the CuSn alloy layer is Cu 6 Sn 5 , A thin (Cu, Ni, Si) 6 Sn 5 alloy in which a part of Ni and Si and Cu in the base material is substituted is formed near the interface with the base material. Further, the interface between the CuSn alloy layer and the Sn-based surface layer is formed in a concavo-convex shape and has a sharpness exceeding 3.
The kurtosis degree Rku defined in JIS B0601 is the dimensionless square root mean square height (Rq) of the mean square of the rolling circle waviness curve Z (x) at the reference length lr of the measurement object surface. It is represented by the following formula. It is characterized by the spread of the height distribution on a scale of surface sharpness. When Rku is 3 or less, the shape of the surface unevenness of the height distribution is crushed. When Rku exceeds 3, Indicates that the height distribution is sharp.
Ｓｎ系表面層は平均厚みが０．２μｍ以上０．４μｍ以下に形成される。その厚みが０．２μｍ未満でははんだ濡れ性の低下、電気的接続信頼性の低下を招き、０．４μｍを超えると表層をＳｎとＣｕＳｎの複合構造とすることができず、Ｓｎだけで占められるので動摩擦係数が増大するためである。
そして、このＳｎ系表面層の表面に、下層のＣｕＳｎ合金層の一部が露出しており、その露出部分の面積率が１０〜４０％とされる。露出面積率が１０％未満では動摩擦係数を０．３以下とすることができず、４０％を超えると、はんだ濡れ性等の電気接続特性が低下する。
The Sn-based surface layer is formed with an average thickness of 0.2 μm to 0.4 μm. If the thickness is less than 0.2 μm, solder wettability and electrical connection reliability are reduced, and if it exceeds 0.4 μm, the surface layer cannot be made of a composite structure of Sn and CuSn, and is occupied only by Sn. This is because the dynamic friction coefficient increases.
A part of the lower CuSn alloy layer is exposed on the surface of the Sn-based surface layer, and the area ratio of the exposed portion is set to 10 to 40%. If the exposed area ratio is less than 10%, the dynamic friction coefficient cannot be 0.3 or less, and if it exceeds 40%, electrical connection characteristics such as solder wettability are deteriorated.
このような構造の端子材は、ＣｕＳｎ合金層とＳｎ系表面層との界面が尖鋭な凹凸形状に形成されていることにより、Ｓｎ系表面層の表面から数百ｎｍの深さの範囲で、硬いＣｕＳｎ合金層の深い谷部に軟らかいＳｎが介在し、かつ表面においては、その硬いＣｕＳｎ合金層の一部がＳｎ系表面層にわずかに露出した状態とされ、谷部に介在する軟らかいＳｎが潤滑剤の作用を果たし、動摩擦係数０．３以下とされる。しかも、ＣｕＳｎ合金層の露出面積率は１０〜４０％の限られた範囲であるから、Ｓｎ系表面層の持つ優れた電気接続特性を損なうことはない。 The terminal material having such a structure has a sharp uneven shape at the interface between the CuSn alloy layer and the Sn-based surface layer. Soft Sn is present in the deep valley portion of the hard CuSn alloy layer, and on the surface, a part of the hard CuSn alloy layer is slightly exposed to the Sn-based surface layer, and the soft Sn interposed in the valley portion is present. It acts as a lubricant and has a dynamic friction coefficient of 0.3 or less. Moreover, since the exposed area ratio of the CuSn alloy layer is in a limited range of 10 to 40%, the excellent electrical connection characteristics of the Sn-based surface layer are not impaired.
次に、この端子材の製造方法について説明する。
基材として、Ｃｕ−Ｎｉ−Ｓｉ系合金、Ｃｕ−Ｎｉ−Ｓｉ−Ｚｎ系合金等、Ｎｉ及びＳｉを含有し、更に必要に応じてＺｎ、Ｓｎ、Ｆｅ、Ｍｇの群から選ばれた１種以上を合計で５質量％以下含有し、残部がＣｕ及び不可避不純物から構成される銅合金からなる板材を用意する。この板材に脱脂、酸洗等の処理をすることによって表面を清浄にした後、Ｃｕめっき、Ｓｎめっきをこの順序で施す。
Next, the manufacturing method of this terminal material is demonstrated.
As a base material, Cu-Ni-Si-based alloy, Cu-Ni-Si-Zn-based alloy, etc. contain Ni and Si, and if necessary, one kind selected from the group of Zn, Sn, Fe, Mg A plate material made of a copper alloy containing the above in total by 5% by mass or less and the balance of Cu and inevitable impurities is prepared. After the surface of the plate material is cleaned by degreasing, pickling, etc., Cu plating and Sn plating are performed in this order.
Ｃｕめっきは一般的なＣｕめっき浴を用いればよく、例えば硫酸銅（ＣｕＳＯ４）及び硫酸（Ｈ２ＳＯ４）を主成分とした硫酸銅浴等を用いることができる。めっき浴の温度は２０〜５０℃、電流密度は１〜２０Ａ／ｄｍ２とされる。このＣｕめっきにより形成されるＣｕめっき層の膜厚は０．１５μｍ以上０．３μｍ未満とされる。０．１５μｍ未満では合金基材の影響が大きく、表層にまでＣｕＳｎ合金層が成長して光沢度、はんだ濡れ性の低下を招き、０．３μｍ以上であると、リフロー時に基材よりＮｉ及びＳｉが十分に供給されず、所望のＣｕＳｎ合金層の凹凸形状を得られないためである。 For Cu plating, a general Cu plating bath may be used. For example, a copper sulfate bath mainly composed of copper sulfate (CuSO 4 ) and sulfuric acid (H 2 SO 4 ) may be used. The temperature of the plating bath is 20 to 50 ° C., and the current density is 1 to 20 A / dm 2 . The film thickness of the Cu plating layer formed by this Cu plating is 0.15 μm or more and less than 0.3 μm. If the thickness is less than 0.15 μm, the influence of the alloy base material is large, and the CuSn alloy layer grows to the surface layer, leading to a decrease in glossiness and solder wettability. Is not sufficiently supplied, and a desired uneven shape of the CuSn alloy layer cannot be obtained.
Ｓｎめっき層形成のためのめっき浴としては、一般的なＳｎめっき浴を用いればよく、例えば硫酸（Ｈ２ＳＯ４）と硫酸第一錫（ＳｎＳＯ４）を主成分とした硫酸浴を用いることができる。めっき浴の温度は１５〜３５℃、電流密度は１〜３０Ａ／ｄｍ２とされる。Ｓｎめっき層の厚みとＣｕめっき層の厚みの合計が０．８μｍ以上１．１μｍ未満とされる。合計の厚みが０．８μｍ未満であると、リフロー後のＳｎ系表面層が薄くなって電気接続特性が損なわれ、１．１μｍ以上であると、表面へのＣｕＳｎ合金層の露出が少なくなって動摩擦係数を０．３以下にすることが難しい。 As a plating bath for forming the Sn plating layer, a general Sn plating bath may be used. For example, a sulfuric acid bath mainly composed of sulfuric acid (H 2 SO 4 ) and stannous sulfate (SnSO 4 ) is used. Can do. The temperature of the plating bath is 15 to 35 ° C., and the current density is 1 to 30 A / dm 2 . The total thickness of the Sn plating layer and the Cu plating layer is 0.8 μm or more and less than 1.1 μm. When the total thickness is less than 0.8 μm, the Sn-based surface layer after reflow is thinned and the electrical connection characteristics are impaired, and when it is 1.1 μm or more, the exposure of the CuSn alloy layer to the surface is reduced. It is difficult to make the dynamic friction coefficient 0.3 or less.
リフロー処理条件としては、還元雰囲気中で基材の表面温度が２４０℃〜３６０℃となる条件で６〜１２秒加熱し、急冷とされる。さらに望ましくは２６０〜３００℃で６〜１０秒加熱後急冷である。この場合、保持時間は後述の表２に示すようにＣｕめっき層及びＳｎめっき層のそれぞれの厚みに応じて６〜１２秒の範囲で適切な時間があり、めっき厚が薄いほど保持時間は少なく、厚くなると長い保持時間が必要になる。２４０℃未満の温度、保持時間が表２に示す時間未満の加熱ではＣｕＳｎ合金の成長が進まず所望の形状をしたＣｕＳｎ合金層を得ることができず、３６０℃を超える温度、保持時間が表２に示す時間を超える加熱ではＣｕＳｎ合金結晶が大きく成長してしまい所望の形状を得られず、またＣｕＳｎ合金層が表層にまで達し、表面に残留するＳｎ系表面層が少なくなり過ぎる（ＣｕＳｎ合金層の表面への露出率が大きくなり過ぎる）ためである。また、加熱条件が高いとＳｎ系表面層の酸化が進行して好ましくない。 As reflow treatment conditions, the substrate is heated for 6 to 12 seconds in a reducing atmosphere under conditions where the surface temperature of the base material is 240 ° C. to 360 ° C., and then rapidly cooled. More preferably, it is rapid cooling after heating at 260 to 300 ° C. for 6 to 10 seconds. In this case, as shown in Table 2 described later, the holding time is an appropriate time in the range of 6 to 12 seconds depending on the thickness of each of the Cu plating layer and the Sn plating layer, and the holding time decreases as the plating thickness decreases. When it is thick, a long holding time is required. When the temperature is less than 240 ° C. and the holding time is less than the time shown in Table 2, the growth of the CuSn alloy does not progress, and a CuSn alloy layer having a desired shape cannot be obtained. When the heating exceeds the time shown in Fig. 2, the CuSn alloy crystal grows large and a desired shape cannot be obtained, and the CuSn alloy layer reaches the surface layer, and the Sn-based surface layer remaining on the surface becomes too small (CuSn alloy). This is because the exposure rate to the surface of the layer becomes too large). Moreover, when heating conditions are high, the oxidation of the Sn-based surface layer proceeds, which is not preferable.
板厚０．２５ｍｍの銅合金（Ｎｉ；０．５〜５．０質量％−Ｚｎ；０．１〜１．０質量％−Ｓｎ；０〜０．５質量％―Ｓｉ；０．１〜１．５質量％−Ｆｅ；０〜０．０３質量％−Ｍｇ；０〜０．００５質量％）を基材とするものを主とし、Ｃｕめっき、Ｓｎめっきを順に施した。この場合、Ｃｕめっき及びＳｎめっきのめっき条件は実施例、比較例とも同じで、表１に示す通りとした。表１中、Ｄｋはカソードの電流密度、ＡＳＤはＡ／ｄｍ２の略である。 Copper alloy with a thickness of 0.25 mm (Ni: 0.5 to 5.0 mass% -Zn; 0.1 to 1.0 mass%-Sn; 0 to 0.5 mass% -Si; 0.1 to 1 0.5 mass% -Fe; 0-0.03 mass% -Mg; 0-0.005 mass%) as a base material, and Cu plating and Sn plating were performed in this order. In this case, the plating conditions for Cu plating and Sn plating were the same as in the examples and comparative examples, as shown in Table 1. In Table 1, Dk is an abbreviation of cathode current density and ASD is A / dm 2 .
めっき処理後、実施例、比較例ともリフロー処理として、還元雰囲気中で、基材表面温度が２４０〜３６０℃になるまで昇温後、めっき層厚みに応じて表２に示す範囲内の時間加熱後、水冷した。 After the plating treatment, both the examples and comparative examples were reflowed as a reflow treatment in a reducing atmosphere until the substrate surface temperature reached 240 to 360 ° C., and then heated for a time within the range shown in Table 2 according to the plating layer thickness. After that, it was cooled with water.
比較例として、基材のＮｉ及びＳｉ濃度や、Ｃｕめっき層の厚み、Ｓｎめっき層の厚みを変量したものも作製した。
これら試料の条件を表３に示す。
As comparative examples, the Ni and Si concentrations of the substrate, the thickness of the Cu plating layer, and the thickness of the Sn plating layer were also varied.
Table 3 shows the conditions of these samples.
これらの試料について、リフロー後のＳｎ系表面層の厚み、ＣｕＳｎ合金層の厚み、ＣｕＳｎ合金層の尖がり度Ｒｋｕ、ＣｕＳｎ合金層のＳｎ系表面層上の露出面積率を測定するとともに、動摩擦係数、はんだ濡れ性、電気的信頼性を評価した。 For these samples, the thickness of the Sn-based surface layer after reflow, the thickness of the CuSn alloy layer, the sharpness Rku of the CuSn alloy layer, the exposed area ratio of the CuSn alloy layer on the Sn-based surface layer, and the dynamic friction coefficient The solder wettability and electrical reliability were evaluated.
リフロー後のＳｎ系表面層及びＣｕＳｎ合金層の厚みは、エスエスアイ・ナノテクノロジー株式会社製蛍光Ｘ線膜厚計（ＳＦＴ９４００）にて測定した。最初にリフロー後の試料の全Ｓｎ系表面層の厚みを測定した後、例えばレイボルド株式会社製のＬ８０等の、純ＳｎをエッチングしＣｕＳｎ合金を腐食しない成分からなるめっき被膜剥離用のエッチング液に５分間浸漬することによりＳｎ系表面層を除去し、その下層のＣｕＳｎ合金層を露出させＣｕＳｎ合金層の厚みを測定した後、（全Ｓｎ系表面層の厚み−ＣｕＳｎ合金層の厚み）をＳｎ系表面層の厚みと定義した。 The thicknesses of the Sn-based surface layer and the CuSn alloy layer after reflow were measured with a fluorescent X-ray film thickness meter (SFT9400) manufactured by SSI Nanotechnology. First, after measuring the thickness of the entire Sn-based surface layer of the sample after reflowing, for example, L80 manufactured by Reybold Co., Ltd., an etching solution for removing the plating film made of a component that etches pure Sn and does not corrode the CuSn alloy After removing the Sn-based surface layer by immersing for 5 minutes, exposing the underlying CuSn alloy layer and measuring the thickness of the CuSn alloy layer, (total Sn-based surface layer thickness−CuSn alloy layer thickness) is Sn It was defined as the thickness of the system surface layer.
ＣｕＳｎ合金層の尖がり度Ｒｋｕは、Ｓｎめっき被膜剥離用のエッチング液に浸漬してＳｎ系表面層を除去し、その下層のＣｕＳｎ合金層を露出させた後、株式会社キーエンス製レーザ顕微鏡(ＶＫ−９７００)を用い、対物レンズ１５０倍（測定視野９４μｍ×７０μｍ）の条件で、長手方向で５点、短手方向で５点、計１０点測定したＲｋｕの平均値より求めた。 The sharpness Rku of the CuSn alloy layer was immersed in an etching solution for removing the Sn plating film to remove the Sn-based surface layer, and the underlying CuSn alloy layer was exposed. -9700) and the average value of Rku measured at 10 points in total, 5 points in the longitudinal direction and 5 points in the short direction under the condition of 150 times the objective lens (measuring visual field 94 μm × 70 μm).
ＣｕＳｎ合金層の露出面積率は、表面酸化膜を除去後、１００×１００μｍの領域を走査イオン顕微鏡により観察した。測定原理上、最表面から約２０ｎｍまでの深さ領域にＣｕ６Ｓｎ５が存在すると、白くイメージングされるので、画像処理ソフトを使用し、測定領域の全面積に対する白い領域の面積の比率をＣｕＳｎ合金の露出面積率とみなした。 The exposed area ratio of the CuSn alloy layer was observed with a scanning ion microscope in a 100 × 100 μm region after removing the surface oxide film. On the measurement principle, if Cu 6 Sn 5 is present in the depth region from the outermost surface to about 20 nm, white imaging is performed. Therefore, using the image processing software, the ratio of the area of the white region to the total area of the measurement region is set to CuSn. The exposed area ratio of the alloy was considered.
動摩擦係数については、嵌合型のコネクタのオス端子とメス端子の接点部を模擬するように、各試料について板状のオス試験片と内径１．５ｍｍの半球状としたメス試験片とを作成し、株式会社トリニティーラボ製の摩擦測定機（μＶ１０００）を用い、両試験片間の摩擦力を測定して動摩擦係数を求めた。図５により説明すると、水平な台１１上にオス試験片１２を固定し、その上にメス試験片１３の半球凸面を置いてめっき面同士を接触させ、メス試験片１３に錘１４によって４．９Ｎ（５００ｇｆ）の荷重Ｐをかけてオス試験片１２を押さえた状態とする。この荷重Ｐをかけた状態で、オス試験片１２を摺動速度８０ｍｍ／分で矢印で示す水平方向に１０ｍｍ引っ張ったときの摩擦力Ｆをロードセル１５によって測定した。その摩擦力Ｆの平均値Ｆａｖと荷重Ｐより動摩擦係数（＝Ｆａｖ／Ｐ）を求めた。 For the dynamic friction coefficient, create a plate-shaped male test piece and a hemispherical female test piece with an inner diameter of 1.5 mm for each sample so as to simulate the contact part of the male terminal and female terminal of the fitting type connector. Then, using a friction measuring machine (μV1000) manufactured by Trinity Lab Co., Ltd., the frictional force between the two test pieces was measured to determine the dynamic friction coefficient. Referring to FIG. 5, the male test piece 12 is fixed on the horizontal base 11, the hemispherical convex surface of the female test piece 13 is placed on the male test piece 13, and the plated surfaces are brought into contact with each other. The load P of 9N (500 gf) is applied and the male test piece 12 is pressed. With this load P applied, the frictional force F when the male test piece 12 was pulled 10 mm in the horizontal direction indicated by the arrow at a sliding speed of 80 mm / min was measured by the load cell 15. A dynamic friction coefficient (= Fav / P) was obtained from the average value Fav of the friction force F and the load P.
はんだ濡れ性については、試験片を１０ｍｍ幅に切り出し、ロジン系フラックスを用いてメニスコグラフ法にてゼロクロスタイムを測定した。（はんだ浴温２３０℃のＳｎ−３７％Ｐｂはんだに浸漬させ、浸漬速度２ｍｍ／ｓｅｃ、浸漬深さ２ｍｍ、浸漬時間１０ｓｅｃの条件にて測定した。）はんだゼロクロスタイムが３秒以下を○と評価し、３秒を超えた場合を×と評価した。
電気的信頼性を評価するため、大気中で１５０℃×５００時間加熱し、接触抵抗を測定した。測定方法はＪＩＳ−Ｃ−５４０２に準拠し、４端子接触抵抗試験機（山崎精機研究所製：ＣＲＳ−１１３−ＡＵ）により、摺動式（１ｍｍ）で０から５０ｇまでの荷重変化−接触抵抗を測定し、荷重を５０ｇとしたときの接触抵抗値で評価した。
これらの測定結果、評価結果を表４に示す。
About solder wettability, the test piece was cut out to 10 mm width, and the zero crossing time was measured by the meniscograph method using the rosin-type flux. (Measured under the conditions of immersion in Sn-37% Pb solder with a solder bath temperature of 230 ° C. and immersion speed of 2 mm / sec, immersion depth of 2 mm, and immersion time of 10 sec.) Evaluated as “Good” when the solder zero cross time is 3 seconds or less. The case of exceeding 3 seconds was evaluated as x.
In order to evaluate the electrical reliability, the contact resistance was measured by heating in the atmosphere at 150 ° C. for 500 hours. The measuring method is based on JIS-C-5402, 4 terminal contact resistance tester (manufactured by Yamazaki Seiki Laboratories: CRS-113-AU), sliding type (1mm) load change from 0 to 50g-contact resistance Was evaluated by the contact resistance value when the load was 50 g.
These measurement results and evaluation results are shown in Table 4.
この表４から明らかなように、実施例はいずれも動摩擦係数が０．３以下と小さく、はんだ濡れ性が良好で、接触抵抗も１０ｍΩ以下を示した。これに対し比較例３，４，６，７は、Ｒｋｕが３未満のため動摩擦係数が０．３以上あり、比較例１、２、５は動摩擦係数が０．３以下だが、Ｓｎ系表面層が薄くＣｕ６Ｓｎ５露出面積率が４０％を超えているためにはんだ濡れ性が悪く光沢度も低く、接触抵抗も１０ｍΩを超え電気的信頼性が低下した。比較例３はＲｋｕは３を超えているもののＳｎ系表面層の厚みが０．４μｍを超えているため、動摩擦係数が０．３以上ある。
図１及び図２は実施例１の試料の顕微鏡写真であり、図３及び図４は比較例４の顕微鏡写真である。これらの写真を比較してわかるように、実施例のものは、ＣｕＳｎ合金層の凹凸が尖鋭であり、Ｓｎ系表面層にＣｕＳｎ合金層の一部が分散して露出している。比較例のものは、図３に示されるように、ＣｕＳｎ合金層の下部に比較的厚いＣｕ３Ｓｎ層が認められ、その上にＣｕ６Ｓｎ５層が積層した構造とされており、ＣｕＳｎ合金層の凹凸も粗く緩やかで、表面への露出も少ない。
As apparent from Table 4, all the examples had a small coefficient of dynamic friction of 0.3 or less, good solder wettability, and a contact resistance of 10 mΩ or less. On the other hand, Comparative Examples 3, 4, 6, and 7 have a dynamic friction coefficient of 0.3 or more because Rku is less than 3, and Comparative Examples 1, 2, and 5 have a dynamic friction coefficient of 0.3 or less. However, since the exposed area ratio of Cu 6 Sn 5 exceeded 40%, the solder wettability was poor and the glossiness was low, and the contact resistance exceeded 10 mΩ, resulting in a decrease in electrical reliability. In Comparative Example 3, although Rku exceeds 3, the thickness of the Sn-based surface layer exceeds 0.4 μm, and thus the dynamic friction coefficient is 0.3 or more.
1 and 2 are photomicrographs of the sample of Example 1, and FIGS. 3 and 4 are photomicrographs of Comparative Example 4. As can be seen from comparison of these photographs, in the example, the unevenness of the CuSn alloy layer is sharp, and a part of the CuSn alloy layer is dispersedly exposed on the Sn-based surface layer. As shown in FIG. 3, the comparative example has a structure in which a relatively thick Cu 3 Sn layer is recognized below the CuSn alloy layer and a Cu 6 Sn 5 layer is laminated thereon. The unevenness of the layer is rough and gentle, and there is little exposure to the surface.
１１ 台
１２ オス試験片
１３ メス試験片
１４ 錘
１５ ロードセル
11 units 12 Male test piece 13 Female test piece 14 Weight 15 Load cell
Claims (5)
（１）Ｓｎめっき層の厚みが０．７μｍ未満に対して、Ｃｕめっき層の厚みが０．１５μｍ以上０．２５μｍ未満の場合は６〜９秒、Ｃｕめっき層の厚みが０．２５μｍ以上０．３０μｍ未満の場合は６〜１２秒
（２）Ｓｎめっき層の厚みが０．７μｍ以上０．９μｍ未満に対して、Ｃｕめっき層の厚みが０．１５μｍ以上０．２０μｍ未満の場合は６〜９秒、Ｃｕめっき層の厚みが０．２０μｍ以上０．２５μｍ未満の場合は６〜１２秒、Ｃｕめっき層の厚みが０．２５μｍ以上０．３０μｍ未満の場合は９〜１２秒
（３）Ｓｎめっき層の厚みが０．９μｍ以上で、Ｃｕめっき層の厚みが０．１５μｍ以上０．２５μｍ未満の場合は６〜１２秒 After forming a Cu plating layer and a Sn plating layer in this order on a substrate made of a Cu alloy, a tin-based surface layer is formed on the substrate via a CuSn alloy layer by reflow treatment. a method of manufacturing a plated copper alloy material for terminal, as the base material, 0.5 to 5 wt% of Ni, and containing 0.1 to 1.5 mass% of Si, the remaining portion is Cu and unavoidable impurities The thickness of the Cu plating layer is 0.15 μm or more and less than 0.3 μm, and the total thickness of the Sn plating layer and the Cu plating layer is 0.8 μm or more and less than 1.1 μm. The reflow treatment is performed by raising the temperature until the surface temperature of the substrate reaches 240 to 360 ° C., holding the temperature for the time indicated in the following (1) to (3), and then rapidly cooling the substrate. A method for producing a copper alloy terminal material.
(1) Whereas the thickness of the Sn plating layer is less than 0.7 μm, when the thickness of the Cu plating layer is 0.15 μm or more and less than 0.25 μm, the thickness is 6 to 9 seconds, and the thickness of the Cu plating layer is 0.25 μm or more and 0 .6-12 seconds for less than 30 μm
(2) When the thickness of the Sn plating layer is 0.7 μm or more and less than 0.9 μm, when the thickness of the Cu plating layer is 0.15 μm or more and less than 0.20 μm, the thickness of the Cu plating layer is 0 to 6-9 seconds. .6 to 12 seconds when the thickness is 20 μm or more and less than 0.25 μm, and 9 to 12 seconds when the thickness of the Cu plating layer is 0.25 μm or more and less than 0.30 μm
(3) 6-12 seconds when the thickness of the Sn plating layer is 0.9 μm or more and the thickness of the Cu plating layer is 0.15 μm or more and less than 0.25 μm
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011189193A JP5640922B2 (en) | 2011-08-31 | 2011-08-31 | Tin-plated copper alloy terminal material with excellent insertability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011189193A JP5640922B2 (en) | 2011-08-31 | 2011-08-31 | Tin-plated copper alloy terminal material with excellent insertability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013049909A JP2013049909A (en) | 2013-03-14 |
| JP5640922B2 true JP5640922B2 (en) | 2014-12-17 |
Family
ID=48012166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011189193A Active JP5640922B2 (en) | 2011-08-31 | 2011-08-31 | Tin-plated copper alloy terminal material with excellent insertability |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5640922B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6221695B2 (en) * | 2013-03-25 | 2017-11-01 | 三菱マテリアル株式会社 | Tin-plated copper alloy terminal material with excellent insertability |
| JP5748019B1 (en) * | 2014-08-27 | 2015-07-15 | 株式会社オートネットワーク技術研究所 | Pin terminals and terminal materials |
| CN104701249B (en) * | 2015-02-09 | 2017-08-22 | 大连理工大学 | A kind of three-dimension packaging vertical through hole of intermetallic compound filling and preparation method thereof |
| CN104674335B (en) * | 2015-02-09 | 2018-01-16 | 大连理工大学 | The preparation method of intermetallic compound film |
| JP5984980B2 (en) | 2015-02-24 | 2016-09-06 | Ｊｘ金属株式会社 | Sn plating material for electronic parts |
| CN112589460A (en) * | 2020-12-10 | 2021-04-02 | 湖南艾林维尔电子有限公司 | One-time stamping forming device for manufacturing copper-aluminum wiring terminal |
-
2011
- 2011-08-31 JP JP2011189193A patent/JP5640922B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013049909A (en) | 2013-03-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5263435B1 (en) | Tin-plated copper alloy terminal material with excellent insertability | |
| JP5278630B1 (en) | Tin-plated copper alloy terminal material excellent in insertion / extraction and manufacturing method thereof | |
| JP5522300B1 (en) | Tin-plated copper alloy terminal material excellent in insertion / extraction and manufacturing method thereof | |
| JP6221695B2 (en) | Tin-plated copper alloy terminal material with excellent insertability | |
| JP6160582B2 (en) | Tin-plated copper alloy terminal material and manufacturing method thereof | |
| KR20140004021A (en) | Tin-plated copper alloy terminal member with outstanding insertion and removal characteristics and mathod of manufacturing the same | |
| JP5640922B2 (en) | Tin-plated copper alloy terminal material with excellent insertability | |
| JP2015143385A (en) | tin-plated copper alloy terminal material | |
| JP2015063750A (en) | Tin-plated copper alloy terminal material excellent in insertability/extractability | |
| JP6423025B2 (en) | Tin-plated copper terminal material excellent in insertion / removability and manufacturing method thereof | |
| JP6201554B2 (en) | Mating type connection terminal | |
| JP2015110829A (en) | Tin-plated copper-alloy terminal material | |
| JP2015124434A (en) | Tin-plated copper-alloy terminal material | |
| JP6443092B2 (en) | Tin-plated copper alloy terminal material | |
| JP6217390B2 (en) | Tin-plated copper alloy terminal material with excellent insertability | |
| JP6011129B2 (en) | Copper alloy terminal material excellent in insertion / removability and manufacturing method thereof | |
| JP2016141835A (en) | Tinned copper alloy terminal material | |
| JP2016143542A (en) | Tin plated copper alloy terminal material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121205 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131126 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131210 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140116 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140930 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141013 |
|
| R150 | Certificate of patent (=grant) or registration of utility model |
Ref document number: 5640922 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |