CN105895584B - Silicon returns the stripping means for throwing piece polycrystalline film - Google Patents
Silicon returns the stripping means for throwing piece polycrystalline film Download PDFInfo
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- CN105895584B CN105895584B CN201610267921.3A CN201610267921A CN105895584B CN 105895584 B CN105895584 B CN 105895584B CN 201610267921 A CN201610267921 A CN 201610267921A CN 105895584 B CN105895584 B CN 105895584B
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- polycrystalline film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
Abstract
The present invention provides a kind of silicon and returns the stripping means for throwing piece multilayer polycrystalline film, 15-30min is impregnated it is characterized by: the wafer for being deposited with multilayer polycrystalline film is put into temperature greater than 50 DEG C and is greater than in 35% and the KOH solution less than 45% less than 70 DEG C, mass fraction first, slowly the polycrystalline film of corrosion removing crystal column surface deposition；Wafer is then put into temperature greater than 90 DEG C and impregnates 8-12min in the solution of KOH of the mass fraction greater than 45%, polycrystalline film is thoroughly corroded to removing, so that obtaining polished silicon returns throwing piece.The present invention can reduce generated surface stress after polycrystalline film removing, and the silicon for corroding resulting piece to be thrown is made to return the quantity for throwing the skid wire of piece case depth and width greater than 70 μm less than 50；Thus the present invention is for improving the anti-yield rate of throwing of wafer with remarkable result.
Description
Technical field
The patent is related to integrated circuit with returning throwing silicon chip process technology, more particularly to returns the wafer of polishing technical process
Film layer corrodes stripping technology technology.
Background technique
As the industries such as semiconductor, LED, solar energy flourish, products application is more and more extensive；Constantly expand global
Demand driving under, major Semiconductor enterprises constantly extend new plant area, promote production capacity to meet the market demand.But produce wafer
When, each processing procedure must all monitor, and confirm that the stabilization of processing procedure, yield ensure, can just produce product required for client.Cause
This just must actually consider to produce the cost of required investment test wafer when wafer under the premise of meeting the market demand.
In wafer manufacturing process, positive is not only needed, but also the vacation for largely playing setoff is needed to accompany piece, to protect
Demonstrate,prove the quality of positive.Its vacation accompanies the demand of piece no less than the demand of positive.For accompanying piece to vacation in wafer manufacturing process
Quality requirements it is high, thus many wafer makers by the unqualified wafer detected in each production process by returning buffer
Skill is done over again into the slightly thin silicon wafer of thickness and is used for vacation and accompany piece, or even does over again into positive, to reduce production cost.And this
Class silicon wafer, which is called, returns throwing piece.
It returns and throws piece and have no too big quality difference with original wafer other than thickness is thinning because of grinding and polishing, using returning
Polished silicon wafer accompanies piece that can reduce the consumption to positive as vacation, while if returning the thickness and items property index satisfaction of polished silicon wafer
Positive requirement can also be applied to again IC wafer and manufacture, thus can directly reduce the manufacturing cost of IC wafer.Undesirable wafer table
Face mask layer mainly has SiO2, Si3N4, polysilicon etc.；Wherein SiO2, Si3N4 deposition film can be removed using hydrofluoric acid, polycrystalline
Siliceous deposits film generally uses the concentration of 90 DEG C of temperatures above to remove greater than 45%KOH solution corrosion.Depositional coating removing is i.e. thin
Road silicon wafer returns polishing process after membrane stress can be put into after eliminating: grinding-polishing-cleaning.
But the corrosion stripping means of this alkaline solution using high-temperature high concentration, although can be removed with fast erosion
The polycrystalline film on surface, but it is quick using this technique polycrystalline film for the wafer that surface is deposited with multilayer polycrystalline film
Be corroded removing, and multilayer polycrystalline film stress is concentrated quick release to eventually lead to surface and generated more than 100 or more in a crisscross manner
All reach 70 μm or more of close-packed lattice skid wire through entire crystal face and depth and width；It increases corrosion and polishing process returns
The removal amount for throwing piece surface, causes silicon wafer available thickness to be seriously thinned.
Summary of the invention
Against the above technical problems, the present invention provides a kind of silicon and returns the stripping means for throwing piece multilayer polycrystalline film, feature
It is: the wafer of the polycrystalline film containing multilayer is soaked in temperature greater than 50 DEG C and is greater than and 35% is less than less than 70 DEG C, mass fraction
15~30min of preliminary corrosion treatment in 45% KOH solution；
The wafer of preliminary corrosion treatment is soaked in temperature greater than 90 DEG C and in KOH solution of the mass fraction greater than 45% again
Carry out 8~12min of deep erosions；
It is cleaned, it obtains polished silicon and returns throwing piece.
Further, the polycrystalline film containing multilayer can be epitaxial polycrystalline film layer and silica polycrystalline film.
Further, the silicon returns the item number of the skid wire of the depth for throwing piece surface and width greater than 5 μm less than 50.
The beneficial effects of the present invention are slowly crystal column surface is removed in corrosion first under the KOH solution of low-temperature and low-concentration
The polycrystalline film of attachment, crystal column surface stress are able to slow release, effectively inhibit the newly-increased of surface sliding line and extend, substantially drop
It is low to return the grinding removal amount for throwing piece, the effectively usable thickness for returning and throwing piece is improved, wafer is improved and returns and throw regeneration finished product
Rate.
Detailed description of the invention
With reference to appended attached drawing, more fully to describe the embodiment of the present invention.However, appended attached drawing be merely to illustrate and
It illustrates, and is not meant to limit the scope of the invention.
Fig. 1 is the typical process flow of present invention process method.
Fig. 2 is the former old process flow with the comparison of present invention process method.
Specific embodiment
In order to make process technology scheme and process flow advantage of the invention it is more readily appreciated that making with reference to the accompanying drawing into one
The detailed description of step.It shall be stated that specific implementation process method described herein is used only for explaining the present invention, it is not used to
Limit the present invention.Operating procedure as shown in Figure 1, the wafer containing multilayer polycrystalline film is put into temperature greater than 50 DEG C first and
It is greater than 35% less than 15-30min is corroded in 45%KOH solution less than 70 DEG C, mass fraction, slowly removes the polycrystalline of crystal column surface
Film layer, to reach slow release part of the surface stress.Then temperature quality point will be put by the wafer of surface stress sustained release
Corrode 8-12min in 45% or more KOH solution of number, be thoroughly stripped clean polycrystalline film and improve wafer and is apparent.
Using microscope, it can be seen that, the lattice for innovating the obtained wafer surface of improved process by this is sliding
Line width control is moved within 40 μm；By carrying out double side grinding process processing to the wafer for having generated slip line,
To reach two-sided required for wafer surface slip line obtained by the removal improved process of the innovation after tested to go
Except amount is within 70 μm within namely 35 μm of single side removal amount, therefore also it can be concluded that passing through this improved process of innovation
The slip line of obtained wafer surface is deep-controlled within 35 μm.And it can also be determined by data comparison logical
It crosses the slip line width that this innovates the obtained wafer surface of improved process and is greater than depth.
Embodiment 1
The present invention is a kind of improved process of innovation, passes through the control to temperature of chemical liquid and concentration as shown in Figure 1
Stepped chemical reaction rate (high-speed after first low rate) is realized to corrode the polycrystalline film of removing wafer.
It is the corrosion process of low rate first, the wafer for being deposited with polycrystalline film is put into temperature as 70 DEG C, quality point
Number slowly removes the polycrystalline film of crystal column surface for corrosion 15min in 45% KOH solution；Wafer, which is then put into temperature, is
90 DEG C, mass fraction be 45% KOH solution in corrosion 8min thoroughly polycrystalline film is stripped clean.
The slip line that width is greater than 5 μm is not generated by micro- 75% wafer of sem observation；25% wafer
Slip line of the width greater than 5um and quantity are generated within 50, and the width of slip line is respectively less than 40um.
Embodiment 2
The wafer for being deposited with polycrystalline film is put into the KOH solution that temperature is 70 DEG C, mass fraction is 40% and is corroded
20min slowly removes the polycrystalline film of crystal column surface；Wafer is then put into temperature is 90 DEG C, mass fraction is 48%
Corrode 8min in KOH solution to be thoroughly stripped clean polycrystalline film.
The slip line that width is greater than 5 μm is not generated by micro- 80% wafer of sem observation；20% wafer
Slip line of the width greater than 5um and quantity are generated within 40, and the width of slip line is respectively less than 30 μm.
Embodiment 3
The wafer for being deposited with polycrystalline film is put into the KOH solution that temperature is 65 DEG C, mass fraction is 45% and is corroded
20min slowly removes the polycrystalline film of crystal column surface；Then by wafer be put into temperature be 95 DEG C, mass fraction 45%KOH
Corrode 10min in solution to be thoroughly stripped clean polycrystalline film.
The slip line that width is greater than 5 μm is not generated by micro- 73% wafer of sem observation；27% wafer
Slip line of the width greater than 5 μm and quantity are generated within 50, and the width of slip line is respectively less than 45 μm.
Embodiment 4
The wafer for being deposited with polycrystalline film is put into the KOH solution that temperature is 60 DEG C, mass fraction is 40% and is corroded
30min slowly removes the polycrystalline film of crystal column surface；Wafer is then put into temperature is 90 DEG C, mass fraction is 48%
Corrode 8min in KOH solution to be thoroughly stripped clean polycrystalline film.
The slip line that width is greater than 5 μm, 15% wafer are not generated by micro- 85% wafer of sem observation
Slip line of the width greater than 5 μm and quantity are generated within 40, and the width of slip line is respectively less than 25 μm.
Embodiment 5
The wafer for being deposited with polycrystalline film is put into the KOH solution that temperature is 70 DEG C, mass fraction is 35% and is corroded
30min slowly removes the polycrystalline film of crystal column surface；Wafer is then put into 95 DEG C of temperature, mass fraction is that 48%KOH is molten
Corrode 5min in liquid to be thoroughly stripped clean polycrystalline film.
The slip line that width is greater than 5 μm is not generated by micro- 80% wafer of sem observation；20% wafer
5-25 μm of slip line of width and quantity are generated within 50, and the width of slip line is respectively less than 25 μm.
Embodiment 6
The wafer for being deposited with polycrystalline film is put into the KOH solution that temperature is 50 DEG C, mass fraction is 45% and is corroded
60min slowly removes the polycrystalline film of crystal column surface；Wafer is then put into temperature is 90 DEG C, mass fraction is 48%
Corrode 15min in KOH solution to be thoroughly stripped clean polycrystalline film.
The slip line that width is greater than 5 μm is not generated by micro- 65% wafer of sem observation；35% wafer
5-40 μm of slip line of width and quantity are generated within 60, and the width of slip line is respectively less than 25 μm.
Embodiment 7
The wafer for being deposited with polycrystalline film is put into the KOH solution that temperature is 50 DEG C, mass fraction is 45% and is corroded
60min slowly removes the polycrystalline film of crystal column surface；Wafer is then put into temperature is 100 DEG C, mass fraction is 48%
Corrode 10min in KOH solution to be thoroughly stripped clean polycrystalline film.
The slip line that width is greater than 5 μm is not generated by micro- 50% wafer of sem observation, 50% wafer produces
5-60 μm of slip line of width and quantity are given birth within 60.
Embodiment 8
The wafer for being deposited with polycrystalline film is put into the KOH solution that temperature is 70 DEG C, mass fraction is 40% and is corroded
25min slowly removes the polycrystalline film of crystal column surface；Wafer is then put into temperature is 110 DEG C, mass fraction is 48%
Corrode 5min in KOH solution to be thoroughly stripped clean polycrystalline film.
The slip line that width is greater than 5 μm is not generated by micro- 75% wafer of sem observation, 25% wafer produces
5-60 μm of slip line of width and quantity are given birth within 60.
Comparative example
Process before is to corrode the polycrystalline film of removing wafer surface deposition using single chemical reaction rate
And reaction rate is very fast, it is quickly rotten in the 48%KOH solution that the wafer for being deposited with polycrystalline film is put into 90 DEG C of method
Erosion removing 15min.The wafer handled by this film layer stripping technology can quickly be removed due to polycrystalline film, stress collection
Middle quick release causes surface to generate 100 or more and reaches 70 μm or more through entire crystal face and depth and width in a crisscross manner
Close-packed lattice skid wire.
Claims (3)
1. a kind of silicon returns the stripping means for throwing piece multilayer polycrystalline film, it is characterised in that:
(1) wafer of the polycrystalline film containing multilayer is soaked in temperature greater than 50 DEG C and be greater than less than 70 DEG C, mass fraction 35% small
15~30min of preliminary corrosion treatment in 45% KOH solution；
(2) wafer of preliminary corrosion treatment is soaked in temperature greater than 90 DEG C and in KOH solution of the mass fraction greater than 45% again
Carry out 8~12min of deep erosions；
(3) cleaned, it obtains polished silicon and returns throwing piece.
2. stripping means according to claim 1, it is characterised in that the polycrystalline film containing multilayer can be extension
Polycrystalline film and silica polycrystalline film.
3. stripping means according to claim 1, it is characterised in that the width that the silicon returns throwing piece surface is greater than 5 μm
The item number of skid wire is less than 50.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610267921.3A CN105895584B (en) | 2016-04-27 | 2016-04-27 | Silicon returns the stripping means for throwing piece polycrystalline film |
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| CN201610267921.3A CN105895584B (en) | 2016-04-27 | 2016-04-27 | Silicon returns the stripping means for throwing piece polycrystalline film |
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| CN105895584A CN105895584A (en) | 2016-08-24 |
| CN105895584B true CN105895584B (en) | 2019-03-08 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6276997B1 (en) * | 1998-12-23 | 2001-08-21 | Shinhwa Li | Use of chemical mechanical polishing and/or poly-vinyl-acetate scrubbing to restore quality of used semiconductor wafers |
| CN103794467A (en) * | 2014-02-21 | 2014-05-14 | 上海超硅半导体有限公司 | Recycle method for thin silicon wafers |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010102013A2 (en) * | 2009-03-03 | 2010-09-10 | Akrion Systems Llc | Method for selective under-etching of porous silicon |
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2016
- 2016-04-27 CN CN201610267921.3A patent/CN105895584B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6276997B1 (en) * | 1998-12-23 | 2001-08-21 | Shinhwa Li | Use of chemical mechanical polishing and/or poly-vinyl-acetate scrubbing to restore quality of used semiconductor wafers |
| CN103794467A (en) * | 2014-02-21 | 2014-05-14 | 上海超硅半导体有限公司 | Recycle method for thin silicon wafers |
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| CN105895584A (en) | 2016-08-24 |
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Address after: 201604 No. 88, Yangshi Road, Shihudang Town, Songjiang District, Shanghai Patentee after: Shanghai Chaosi Semiconductor Co.,Ltd. Address before: 201604 No. 88, Yangshi Road, Shihudang Town, Songjiang District, Shanghai Patentee before: SHANGHAI ADVANCED SILICON TECHNOLOGY Co.,Ltd. |