CN110071212A - The processing method and equipment of high temperature resistant hard brittle material - Google Patents
The processing method and equipment of high temperature resistant hard brittle material Download PDFInfo
- Publication number
- CN110071212A CN110071212A CN201910329640.XA CN201910329640A CN110071212A CN 110071212 A CN110071212 A CN 110071212A CN 201910329640 A CN201910329640 A CN 201910329640A CN 110071212 A CN110071212 A CN 110071212A
- Authority
- CN
- China
- Prior art keywords
- high temperature
- chip
- brittle material
- etching
- hard brittle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 54
- 238000003672 processing method Methods 0.000 title claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 31
- 238000012545 processing Methods 0.000 claims abstract description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 28
- 238000001259 photo etching Methods 0.000 claims abstract description 24
- 238000011161 development Methods 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 14
- 238000007789 sealing Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 49
- 235000012431 wafers Nutrition 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 24
- 230000010148 water-pollination Effects 0.000 claims description 15
- 238000005498 polishing Methods 0.000 claims description 13
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 5
- 239000002318 adhesion promoter Substances 0.000 claims description 4
- 230000002085 persistent effect Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 13
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052746 lanthanum Inorganic materials 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 description 17
- 238000010897 surface acoustic wave method Methods 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 230000018109 developmental process Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 10
- 229910052916 barium silicate Inorganic materials 0.000 description 8
- HMOQPOVBDRFNIU-UHFFFAOYSA-N barium(2+);dioxido(oxo)silane Chemical compound [Ba+2].[O-][Si]([O-])=O HMOQPOVBDRFNIU-UHFFFAOYSA-N 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 238000007731 hot pressing Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 229920001486 SU-8 photoresist Polymers 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008447 perception Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 241000252506 Characiformes Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 206010044565 Tremor Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 239000010720 hydraulic oil Substances 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000017105 transposition Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention discloses the processing method and equipment of a kind of high temperature resistant hard brittle material, wherein the processing method of high temperature resistant hard brittle material, comprising: photoresist is coated on to the high temperature resistant hard brittle material wafer surface cleaned, and places mask plate and carries out photoetching development；Chip after photoetching development is performed etching, formation prepares the groove of predetermined structure；Chip after etching is aligned with another wafer, and carrying out thermocompression bonding makes two plates contact surface form permanent bonding face, corresponding groove forms the predetermined structures such as sealing cavity.The present invention is suitable for the processing and manufacturing to the high temperature resistants hard brittle material such as callium-lanthanum silicate crystal.
Description
Technical field
The present invention relates to the processing method of materials processing technology field more particularly to a kind of high temperature resistant hard brittle material and set
It is standby.
Background technique
The adverse circumstances, especially hypersonic flight such as high temperature, high rotation are usually associated in aerospace craft operational process
The key positions such as device surface, aero-engine and gas turbine, local temperature are even more than 800 DEG C, therefore, under adverse circumstances
The in situ of the parameters such as temperature, pressure and vibration obtains in real time, material type selecting, the structure of aerospace craft is designed and anti-
Shield measure etc. is of great significance.Compared with wired active device, the wireless sourceless sensor part based on heat-resisting material is in height
Each parameter testing has significant advantage under the adverse circumstances such as temperature, Gao Xuan and vibration, is based especially on surface acoustic wave (SAW) principle
Wireless sourceless sensor part measure distance, Q value, volume and in terms of with superior performance.But it is existing
The problems such as cleavage, denaturation, performance decline, can often occur under high temperature environment for the piezoelectric substrate that most SAW devices use,
To influence the normal operation of device.
Barium silicate (La3Ga5SiO14, abbreviation LGS) and the hard brittleness piezoelectric material such as crystal has excellent high temperature resistance,
Will not be undergone phase transition at 1400 DEG C, be manufacture SAW device ideal material, using callium-lanthanum silicate crystal how
The problem of being processed into the specific structure of SAW device needs becomes urgent need to resolve.
Summary of the invention
The processing method and equipment of high temperature resistant hard brittle material provided by the invention, to realize to callium-lanthanum silicate crystal etc.
The processing and manufacturing of high temperature resistant hard brittle material.
The present invention provides a kind of processing method of high temperature resistant hard brittle material, comprising:
Photoresist is coated on the high temperature resistant hard brittle material wafer surface cleaned by step 10, and place mask plate into
Row photoetching development；
Step 20 performs etching the chip after photoetching development, and formation prepares the groove of predetermined structure；
Step 30 forms the two plates contact surface being bonded forever the chip of etching and the progress thermocompression bonding of another chip
Long bonding face, corresponding groove form predetermined structure.
The present invention also provides a kind of process equipments of high temperature resistant hard brittle material, comprising:
Photoresist is coated on the high temperature resistant hard brittle material wafer surface cleaned, and places mask plate by lithographic equipment
Carry out photoetching development；
Etching device performs etching the chip after photoetching development, and formation prepares the groove of predetermined structure；And
Bonding apparatus, carrying out thermocompression bonding to chip and another chip of etching forms the two plates contact surface being bonded
Permanent bonding face, corresponding groove form predetermined structure.
The present invention prepares the groove of predetermined structure by photoetching, etching technics formation, by the processing for controlling corresponding technique
Precision can enable the machining accuracy of groove obtain effective guarantee, and reduce the mistake in hard brittle material process
Efficiency；Two plates make the atomic energy of two plates interface form stable key connection by hot pressing Direct Bonding mode, to make
Two plates form one due to bond strength, not only realize the preparation of hard brittle material predetermined structure, and make containing
The device of this predetermined structure can keep detection performance to stablize for a long time under high-temperature severe environment, to extend making for device
Use the service life.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of flow chart of the processing method for high temperature resistant hard brittle material that the embodiment of the present invention one provides；
Fig. 2 is a kind of flow chart of the processing method of high temperature resistant hard brittle material provided by Embodiment 2 of the present invention；
Fig. 3 is the process flow diagram that LGS wet etching forms groove in the embodiment of the present invention；
Fig. 4 is the process flow diagram that LGS plasma etching forms groove；
Fig. 5 is a kind of process equipment structural schematic diagram for high temperature resistant hard brittle material that the embodiment of the present invention three provides；
Fig. 6 is a kind of process equipment structural schematic diagram for high temperature resistant hard brittle material that the embodiment of the present invention four provides；
Fig. 7 is the structural schematic diagram of sample fixing device in Fig. 6；
Fig. 8 is that the sealing cavity of preparation of the embodiment of the present invention is applied to the schematic diagram of SAW device.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached in the embodiment of the present invention
Figure, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is the present invention
A part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not having
Every other embodiment obtained under the premise of creative work is made, shall fall within the protection scope of the present invention.
To keep technical solution of the present invention clearer, the embodiment of the present invention is carried out specifically below in conjunction with attached drawing
It is bright.
Fig. 1 is a kind of flow chart of the processing method for high temperature resistant hard brittle material that the embodiment of the present invention one provides, such as Fig. 1
It is shown, the method for the present embodiment, comprising:
Photoresist is coated on the high temperature resistant hard brittle material wafer surface cleaned by step 10, and place mask plate into
Row photoetching development.
The hard brittleness piezoelectric material such as callium-lanthanum silicate crystal has the high temperature resistance for being also not easy phase transformation under the high temperature conditions, is
The ideal material for manufacturing SAW device is generally needed using callium-lanthanum silicate crystal manufacture SAW device detection pressure parameter
A sealing cavity is wanted, is changed, be may be implemented to pressure to the spread speed of surface acoustic wave by perceiving cavity stress and deformation
The accurate perception of force parameter.
In order to prepare the cavity of needs on high temperature resistant piezoelectric material, the embodiment of the present invention uses semiconductor devices first
Processing technology prepares the groove to form cavity, which includes the processing steps such as photoetching, etching, with semiconductor devices system
It is standby similar；Then sealing cavity is formed to having etched two chips to form groove and carry out thermocompression bonding again, or will etch
The chip of the chip and another surfacing not etched that form groove carries out thermocompression bonding and forms sealing cavity.This step
In rapid, the pattern to be etched for forming groove is temporarily transferred on chip by photoetching technique, photoetching concrete operations and semiconductor
Technique in element manufacturing is similar, including cleaning, gluing, exposure, the development etc. to chip.
Barium silicate chip is cleaned first with acetone, isopropanol and H2O2With H2SO4Mixed solution is removed
The remaining organic matter on barium silicate surface.After cleaning, SU-8 photoresist is spun on barium silicate wafer surface, wherein
Photoresist with a thickness of 200 μm, prevent acidic molecular through bonding problem caused by photoresist.
Wafer cleaning rear surface has hydrophily, and photoresist is mostly hydrophobicity, in order to solve photoresist and barium silicate side
The problem of edge poor adhesion, deposits HDMS (hmds) layer in barium silicate wafer surface, enhances photoetching adhesion.
It further include tackified finish step i.e. before applying photoresist, i.e., wafer surface application of adhesion promoters, the chemical structure of HMDS make it
Both it was easily bonded with wafer surface, and was also easy to photoetching glue bond, therefore enhance the adhesiveness of photoresist and chip.
The techniques such as photoetching, corrosion are to process sealing cavity in the embodiment of the present invention, and photoresist can also be expired using negtive photoresist
Sufficient requirement on machining accuracy, and before negtive photoresist adhesive capacity, it is corrosion-resistant, therefore in the embodiment of the present invention photoresist use negtive photoresist, such as
SU-8 photoresist, SU-8 absorptivity in near-ultraviolet range is low, so that it has preferably on entire photoresist thickness
Exposition uniformity.The pattern of mask plate and the cavity shape of formation are consistent, after being coated photoresist, by mask plate and have coated light
The barium silicate substrate of photoresist is placed in parallel, and then carries out ultraviolet exposure, and development then corresponds to the photoetching at cavity in mask plate
Glue is dissolved removal, is finally cleaned with deionized water to chip.
The method of coating photoresist can be steam rubbing method, be also possible to method of spin coating, the embodiment of the present invention is preferential
Method of spin coating can control the thickness of photoresist by controlling rotation speed.The coating of tackifier can equally use coating by vaporization
Method or spin-coating method.
Step 20 performs etching the chip after photoetching development, and formation prepares the groove of predetermined structure；
Photoresist of the chip at mask in above-mentioned steps 10 after photoetching is dissolved, and wafer substrate is directly exposed,
Pass through in this step and etch groove formed here, in concrete application, etching technics can be carved using wet etching or dry method
Erosion.
Wet etching: the mixed solution (HCl:H of hydrochloric acid and phosphoric acid is prepared3PO4=1:1) and it is heated to 80 DEG C, it is coated with photoetching
The LGS chip of glue is corroded, and the mixture of this acid keeps the surface LGS smooth while having faster corrosion rate while keeping
LGS wafer surface flatness, wherein the temperature in reactive tank has great influence for corrosion rate.Control the temperature in reactive tank
Degree can control corrosion rate, after barium silicate is etched a period of time, after satisfaction meets the groove of depth, use deionized water
It is cleaned, then by SU-8 photoresist lift off, using microscopic corrosive effect, to obtain the groove of required LGS cavity.
Fig. 3 is the process flow diagram that LGS wet etching forms groove in the embodiment of the present invention, as shown in figure 3, first right
LGS chip carries out cleaning and forms clean LGS chip, then carries out spin coating in chip one side, i.e. coating SU-8 photoresist, later
Photoresist of the mask plate at the place to be etched in spin coating face, irradiating ultraviolet light, development dissolution mask plate is placed, then in chip
Another side carries out spin coating, uses HCl/H later3PO4Solution corrodes chip, corrodes at the chip of not photoresist overlay
Groove out finally removes the photoresist of wafer surface, obtains surface and forms reeded LGS chip.
Dry etching: it uses sense coupling technology (ICP), utilizes deionized water, alcohol and acetone pair
Langasite substrate is cleaned, and the dust, greasy dirt and organic matter of substrate surface is removed, using chemical vapor deposition in gallium silicate
Lanthanum surface grows layer of silicon dioxide (SiO2) it is used as hard mask material, the LGS chip with exposure mask is placed in plasma etching
Area, the ion in reaction cavity in gas bombard the wafer surface being etched under the bias effect of reaction cavity,
Damaging layer is formed, is reacted to accelerate free active group in plasma on its surface, ion bombardment embodies dry etching
Anisotropy, and due to the deposition of side wall, then the reaction of free active group is inhibited well.Since the physics of dry etching is anti-
The ruler of figure should can be accurately controlled under anisotropy and iso interaction with the mode that chemical reaction combines
Very little and shape, therefore it is higher to etch the accuracy of grooves come.Fig. 4 is that the process flow of LGS plasma etching formation groove is shown
It is intended to, as shown in figure 4, using plasma etching can be primary due to the size and shape that can accurately control figure
Shape it is multiple, finally be sliced segmentation prepare device.
Predetermined structure in the embodiment of the present invention can be to prepare in SAW device for measuring the close of pressure parameter
Seal cavity, or single groove structure, more groove structures or the girder construction of other special-purposes.
Step 30 forms the two plates contact surface being bonded forever the chip of etching and the progress thermocompression bonding of another chip
Long bonding face, corresponding groove form predetermined structure.
The two plates being bonded in this step can for etching after chip and another wafer alignment not etched after be bonded,
It can be closed for the laggard line unit of two wafer alignments through over etching.
It to make groove form the predetermined structures such as cavity, and is still able to be bonded under high-temperature work environment, then must
The atomic energy of two plates interface is set to form stable key connection, thus make two plates due to bond strength and form one, because
This, it is also necessary to certain mechanical pressure and heat treatment will be applied after two plates pairing.Two plates are used in the embodiment of the present invention
The groove formed after etching, i.e., be aligned by substrate Direct Bonding mode, contacts the surface of two plates directly, pressurizes
Heat treatment makes that physical-chemical reaction formation key connection occurs at wafer interface, is permanently bonded to reach two plates, most end form
At the predetermined structure of needs.Compared to the method that other form the predetermined structures such as cavity, such as the method for high temperature glue sticking, the present invention is straight
Not only intensity is high for the predetermined structure that the method for connecing bonding is formed, but also also still keeps integral structure under high temperature environment, thus
Property retention is stablized, therefore the piezoelectric device application being more suitable under high-temperature severe environment.
The embodiment of the present invention prepares the groove of predetermined structure by photoetching, etching technics formation, by controlling corresponding technique
Machining accuracy, the machining accuracy of groove can be enable to obtain effective guarantee, and reduce hard brittle material process
In crash rate；Two plates make the atomic energy of two plates interface form stable key connection by hot pressing Direct Bonding mode,
To make two plates due to bond strength and form one, the preparation of the predetermined structure of hard brittle material is not only realized, but also
So that the device containing this predetermined structure can keep detection performance to stablize for a long time under high-temperature severe environment, to extend
The service life of device.
In the above-described embodiments, it is mutually displaced infiltration to make bonding reach atom level, the wafer surface being mutually bonded should protect
Flat and smooth and cleaning is held, chip can be surface-treated using suitable polishing process and cleaning process.
Fig. 2 is a kind of flow chart of the processing method of high temperature resistant hard brittle material provided by Embodiment 2 of the present invention, such as Fig. 2
It is shown, the method for the present embodiment, on the basis of above-mentioned embodiment one shown in FIG. 1, before wafer bonding process step, also into one
Step includes:
Step 21 carries out polishing and hydrophily processing to wafer surface.
Bonding is carried out using the LGS cavity etched and realizes the LGS three-dimensional structure with sealing cavity, is carrying out being bonded it
Before, processing of surface polishing is carried out to reduce substrate surface roughness to the LGS substrate being bonded in advance first, is then carried out hydrophilic
Surface treatment, wherein surface hydrophilicity processing includes wet-cleaning and corona treatment.In concrete application, first successively with third
Hydrofluoric acid solution and deionized water after ketone, alcohol, Piranha solution (SPM), No. 1 liquid (SC1) of standard cleaning, dilution is to LGS
Substrate carries out wet-cleaning, and SC1 cleaning solution is the mixture of ammonium hydroxide, hydrogen peroxide and water, can by oxidation and electric exclusion
To remove the granulometric impurity and polymer on chip.
Wafer cleaning and then surface activation is carried out to LGS substrate using oxygen plasma, plasma surface treatment is same
When can achieve the pollution for eliminating crystal column surface and further decrease the effect of surface roughness.It is surface-treated with oxygen plasma
Plasma in active oxygen and the organic matter of material surface carry out oxidation reaction, oxygen plasma and the organic dirt of material surface
Organic dirt, is decomposed into carbon dioxide etc., can improve bonded interface by object effect, is conducive to improve bond strength.
After above-mentioned surface treatment, so that it may to the direct thermocompression bonding of two panels LGS substrate.In concrete application, the heat
Pressure is bonded
Step 31, two wafers that surface has been carried out to polishing and hydrophily processing groove be aligned, or will carry out
The wafer alignment of the reeded chip of surface etch and the non-etched recesses in surface of polishing and hydrophily processing, keeps burnishing surface direct
It is bonded in advance, as sample；
Sample is fixed in a mold, and carries out Pressurized-heated processing by step 32, realizes the bonding face of two plates permanent
Bonding.
Chip after polishing and cleaning still uses two plates substrate Direct Bonding mode in the embodiment of the present invention,
The groove of the formation cavity to be sealed of surface preparation is aligned, or by carried out polishing and hydrophily processing
Surface has a reeded chip and surface does not have another wafer alignment of groove, contacts burnishing surface directly, installs
Apply certain pressure in a mold to be bonded in advance, the sample bonded together to form in advance makes at wafer interface using high-temperature process
Physical-chemical reaction occurs and forms key connection, realizes that two plates are permanently bonded, continues the most end form that pressurizes during above-mentioned heating
The structures such as the sealing cavity at needs.
The above-mentioned mold for fixing sample includes the sleeve of upper and lower fixture and stationary fixture made of graphite, which can
It is pressed to form pre- bonding sample for carrying out pre- bonding to two plates at room temperature, sample is then put into togerther burning together with mold
Lower surface is pressurizeed in vertical direction in freezing of a furnace, is integrally heated, and the permanent bonding of sample is realized, to be sealed
LGS cavity.Graphite jig has good physical and chemical performance, and easy to process, and intensity can still protect at high temperature
Barrier, indeformable, the embodiment of the present invention is by using fixture made of graphite and sleeve die, so that chip is in Pressurized-heated process
Middle device precision can be guaranteed.Under high temperature environment, the atom (Si, La, Ga, O) of two bonding faces has broken lattice
It fetters and transposition and movement occurs, atom diffusion has occurred, producing new pole key connects the element on two surfaces, shape
At predetermined structures such as sealing cavities.
The embodiment of the present invention on the basis of the above embodiment 1, further by the preoperative wafer surface of para-linkage into
It goes to polish and be handled with hydrophily, so that the bond strength in the bonding chip face of predetermined structures such as sealing cavity formed further obtains
To reinforcement；Heating pressurization is fixed by using mold, so that shape keeps stablizing during bonding chip, to be conducive to
Promote machining accuracy.
Fig. 5 is a kind of process equipment structural schematic diagram for high temperature resistant hard brittle material that the embodiment of the present invention three provides, such as
Shown in Fig. 5, the equipment of the embodiment of the present invention includes: lithographic equipment 100, etching device 200 and bonding apparatus 300, wherein photoetching
Device 100 for photoresist to be coated on the high temperature resistant hard brittle material wafer surface cleaned, and places mask plate and carries out light
Carve development.In practical application, lithographic equipment 100 may include automatic double surface gluer, litho machine, exposure system etc..Etching device 200,
For performing etching to the chip after photoetching development, formation prepares the groove of predetermined structure, in practical application, etching device 200
It can be also possible to the corresponding etching system of dry etching with the corresponding device of wet etching.
Above-mentioned lithographic equipment 100 can be corresponding in the preparation of semiconductor devices in the prior art to etching device 200
Process equipment, the embodiment of the present invention are no longer described in detail.Bonding apparatus 300 is carried out for the chip to etching with another chip
Thermocompression bonding makes the two plates contact surface being bonded form permanent bonding face, and corresponding groove forms predetermined structure.The present invention
Bonding apparatus 300 in embodiment will not only apply certain pressure when two plates are bonded together to chip, it is also necessary to
Apply certain high temperature so that under its temperature and pressure appropriate between contact interface carry out atom interpenetrate to be formed pole key to
Realize permanent bonding, bonded interface has good air-tightness and long-term stability.In practical application, bonding apparatus 300 can
To include the container for heating pressurization, such as hot pressing furnace heats the control system of pressurization, gas control system and accordingly by controlling
System control processed and the executing agency etc. for executing corresponding operating, wherein gas control system during control bonding for being passed through
Gas, such as nitrogen.Thermocompression bonding can also be carried out in practical application under vacuum conditions.
The control software of bonding apparatus 300 is based on feedback control principle.It is intracavitary in keyed cartridges, according to ideal gas behavior
Equation, cavity pressure, temperature meet following relationship:
ρgBy the intracavitary gas density being passed through, P is gas pressure, and R is calibrating gas constant, and T is intracavity gas temperature,
MgMolal weight for the gas being passed through.
In heating, pressure process, intracavity gas pressure, temperature are in dynamic equilibrium.According to above-mentioned relation, to each ginseng
Number carries out real-time monitoring and is expired by software real-time control with ensuring that temperature, pressure can be stably maintained in preset range
Sufficient actual demand.Two plates are directly permanently bonded together by hot pressing, need to apply stable pressure, can in concrete application
To carry out pressure application by hydraulic device, hydraulic device on-line monitoring and control are easier to realize, such as pass through programmable logic control
Device (Programmable Logic Controller, abbreviation PLC) processed is controlled, and it is high but also anti-interference not only to control precision
Ability is strong, thus it is possible to guarantee the stability of pressure in the bonding process of hard brittle material, so as to which high temperature resistant is effectively reduced
The processing crash rate of hard brittle material.
The corresponding process of equipment application above-described embodiment one in the embodiment of the present invention is realized to the hard brittleness of high temperature resistant
The predetermined structures such as the sealing cavity of material are processed, and the technical effect reached is similar, are repeated no more.
Fig. 6 is a kind of process equipment structural schematic diagram for high temperature resistant hard brittle material that the embodiment of the present invention four provides, such as
Shown in Fig. 6, the equipment of the embodiment of the present invention further comprises on the basis of above-described embodiment three: surface processing device 201,
Polishing and hydrophily processing are carried out to wafer surface；Sample fixing device 202, by surface carried out polishing and hydrophily processing
The groove alignment of two wafers, or the reeded chip of surface etch that will have carried out polishing and hydrophily processing and surface are not
The wafer alignment of etched recesses is bonded burnishing surface directly in advance, fixed in a mold to carry out Pressurized-heated as sample
Processing；And tackified finish device 500, the application of adhesion promoters in the high temperature resistant hard brittle material wafer surface cleaned.It is above-mentioned
Surface processing device 201, sample fixing device 202 and the tackified finish device 500 for further comprising can both be used alone
In the embodiment of the present invention, the embodiment of the present invention can also be applied to simultaneously, can according to need the device of processing in concrete application
Precision and requirement selection use, and it is not limited in the embodiment of the present invention.
Fig. 7 is the structural schematic diagram of sample fixing device in Fig. 6, as shown in fig. 7, bonding sample 301 is passed through by two panels in advance
The wafer polishing that etching forms groove is aligned preliminary compress and is formed after cleaning, to keep formation between the wafer interface after pre- bonding permanent
Bonding, it is also necessary to sample 301 is placed in progress temperature-pressure processing in hot pressing furnace, so, to make LGS chip in bonding process
Firm fitting, the embodiment of the present invention grip sample 301 using sample fixing device, which includes upper and lower fixture
303 and sleeve 304, the two have graphite preparation, upper and lower fixture 303 is pressed from both sides from both up and down to by the opposite two plates of groove
It holds and applies pressure initiation cavity 302, lead to device preparation failure to prevent fixture inclination stress shakiness above and below in pressure process,
Sample and upper and lower fixture are placed in sleeve 304 in the embodiment of the present invention and consolidated, preliminary pressure is bonded in advance, subsequent
Hot pressing furnace in when carrying out temperature-pressure processing, by sample together with upper and lower fixture and sleeve place in hot pressing furnace.
In concrete application, the two plates of para-linkage, which apply pressure, to be realized by applying pressure to upper and lower fixture, to folder
Applying pressure on tool can be carried out by hydraulic device, and hydraulic device convenient for the PLC of Engineering Control by realizing, in PLC control
Comprising operations such as PID control, Front feedback control and Ratio controls, can be selected according to demand for control, it can be online
Speed, the pressure etc. of hydraulic oil are controlled, realizes and the real-time stabilization of pressure on fixture is controlled, stressed stabilization is applied in guarantee, from
And be conducive to the thermocompression bonding to hard brittle material.
In practical applications, when a piece of reeded chip of etching of use does not have etched recesses surfacing with another
Chip is directly bonded, and the alignment difficulty of two plates can be reduced.
The embodiment of the present invention also provides a kind of SAW device, is prepared by piezoelectric material, which includes: at least one
Prepared by the method using any of the above-described embodiment or the equipment using any of the above-described embodiment is formed in the hard brittleness of high temperature resistant
Sealing cavity on material.
Fig. 8 is that the sealing cavity of preparation of the embodiment of the present invention is applied to the schematic diagram of SAW device, the surface acoustic wave
In device, cavity 12 is to be prepared using the technique or equipment of the embodiment of the present invention, the bottom and upper segment of 12 part of cavity
1 thickness of piezo-electric crystal substrate is smaller, and when piezo-electric crystal substrate 1 bears pressure, the piezo-electric crystal substrate 1 of 12 part of cavity can be produced
Raw deformation, so that changing by the spread speed of the surface acoustic wave of this part piezo-electric crystal substrate 1.By in cavity
The second resonator 3 is formed on 12 corresponding first surface S1, the accurate perception to pressure parameter may be implemented.
Above-mentioned piezo-electric crystal substrate 1 is made of heat-resisting material, so that the SAW device can be suitably used for aviation
In hot environment as engine chamber, material known to those skilled in the art has the hard brittleness material such as callium-lanthanum silicate crystal
Material.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, the range for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (10)
1. a kind of processing method of high temperature resistant hard brittle material characterized by comprising
Photoresist is coated on the high temperature resistant hard brittle material wafer surface cleaned by step 10, and is placed mask plate and carried out light
Carve development；
Step 20 performs etching the chip after photoetching development, and formation prepares the groove of predetermined structure；
Step 30 makes the two plates contact surface being bonded form persistent key the chip of etching and the progress thermocompression bonding of another chip
Conjunction face, corresponding groove form predetermined structure.
2. the method according to claim 1, wherein before step 30, further includes: polished to wafer surface
And hydrophily processing.
3. according to the method described in claim 2, it is characterized in that, step 30, comprising:
Surface has been carried out to the groove alignment of two wafers of polishing and hydrophily processing, or polishing and hydrophily will have been carried out
The wafer alignment of the reeded chip of the surface etch of processing and the non-etched recesses in surface, is bonded burnishing surface directly in advance,
As sample；
Sample is fixed in a mold, and Pressurized-heated processing is carried out, so that the bonding face of two plates is realized permanent bonding.
4. the method according to claim 1, wherein before applying photoresist in step 10, further includes:
The application of adhesion promoters in the high temperature resistant hard brittle material wafer surface cleaned.
5. method according to any one of claims 1 to 4, which is characterized in that the etching in step 20 uses wet etching
Or dry etching.
6. the method according to claim 1, wherein the predetermined structure is sealing cavity.
7. a kind of process equipment of high temperature resistant hard brittle material characterized by comprising
Photoresist is coated on the high temperature resistant hard brittle material wafer surface cleaned by lithographic equipment, and places mask plate progress
Photoetching development；
Etching device performs etching the chip after photoetching development, and formation prepares the groove of predetermined structure；And
Bonding apparatus, chip and another chip to etching, which carry out thermocompression bonding, forms the two plates contact surface being bonded permanently
Bonding face, corresponding groove form predetermined structure.
8. equipment according to claim 7, which is characterized in that further include: surface processing device throws wafer surface
Light and hydrophily processing.
9. equipment according to claim 8, which is characterized in that further include: sample fixing device has polished surface
And the groove alignment of two wafers of hydrophily processing, or the surface etch for having carried out polishing and hydrophily processing is fluted
Chip and the non-etched recesses in surface wafer alignment, be bonded burnishing surface directly in advance, it is fixed in a mold as sample
To carry out Pressurized-heated processing.
10. the equipment according to any one of claim 7~9, which is characterized in that further include: tackified finish device, clear
Application of adhesion promoters in washed high temperature resistant hard brittle material wafer surface.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910329640.XA CN110071212A (en) | 2019-04-30 | 2019-04-30 | The processing method and equipment of high temperature resistant hard brittle material |
| EP19926030.8A EP3967982A4 (en) | 2019-04-26 | 2019-09-29 | Multi-parameter surface acoustic wave sensing device, manufacturing method, and aircraft monitoring system |
| PCT/CN2019/109223 WO2020215611A1 (en) | 2019-04-26 | 2019-09-29 | Multi-parameter surface acoustic wave sensing device, manufacturing method, and aircraft monitoring system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910329640.XA CN110071212A (en) | 2019-04-30 | 2019-04-30 | The processing method and equipment of high temperature resistant hard brittle material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110071212A true CN110071212A (en) | 2019-07-30 |
Family
ID=67368532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910329640.XA Pending CN110071212A (en) | 2019-04-26 | 2019-04-30 | The processing method and equipment of high temperature resistant hard brittle material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110071212A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020215611A1 (en) * | 2019-04-26 | 2020-10-29 | 中北大学 | Multi-parameter surface acoustic wave sensing device, manufacturing method, and aircraft monitoring system |
| CN112744781A (en) * | 2019-10-29 | 2021-05-04 | 中北大学 | Preparation method of magnesium oxide sealed cavity |
| CN114759139A (en) * | 2021-01-08 | 2022-07-15 | 苏州固锝电子股份有限公司 | Low-cost packaging process for filter |
| CN114975092A (en) * | 2022-05-13 | 2022-08-30 | 赛莱克斯微系统科技（北京）有限公司 | Wafer temporary bonding method and debonding method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2235533A (en) * | 1989-08-11 | 1991-03-06 | Stc Plc | Piezoelectric sensor device |
| CN101395457A (en) * | 2006-01-13 | 2009-03-25 | 霍尼韦尔国际公司 | Quartz SAW sensor based on direct quartz bonding |
| CN102169036A (en) * | 2010-12-06 | 2011-08-31 | 北京理工大学 | High-temperature (600 DEG C) pressure measurement passive wireless surface acoustic wave sensor |
-
2019
- 2019-04-30 CN CN201910329640.XA patent/CN110071212A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2235533A (en) * | 1989-08-11 | 1991-03-06 | Stc Plc | Piezoelectric sensor device |
| CN101395457A (en) * | 2006-01-13 | 2009-03-25 | 霍尼韦尔国际公司 | Quartz SAW sensor based on direct quartz bonding |
| CN102169036A (en) * | 2010-12-06 | 2011-08-31 | 北京理工大学 | High-temperature (600 DEG C) pressure measurement passive wireless surface acoustic wave sensor |
Non-Patent Citations (1)
| Title |
|---|
| WANGWANG LI ET AL.: ""Wireless passive pressure sensor based on sapphire direct bonding for harsh environments"", 《SENSORS AND ACTUATORS A: PHYSICAL》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020215611A1 (en) * | 2019-04-26 | 2020-10-29 | 中北大学 | Multi-parameter surface acoustic wave sensing device, manufacturing method, and aircraft monitoring system |
| CN112744781A (en) * | 2019-10-29 | 2021-05-04 | 中北大学 | Preparation method of magnesium oxide sealed cavity |
| CN112744781B (en) * | 2019-10-29 | 2024-07-09 | 中北大学 | Preparation method of magnesium oxide sealing cavity |
| CN114759139A (en) * | 2021-01-08 | 2022-07-15 | 苏州固锝电子股份有限公司 | Low-cost packaging process for filter |
| CN114759139B (en) * | 2021-01-08 | 2024-05-07 | 苏州固锝电子股份有限公司 | Low-cost packaging process for filter |
| CN114975092A (en) * | 2022-05-13 | 2022-08-30 | 赛莱克斯微系统科技（北京）有限公司 | Wafer temporary bonding method and debonding method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110071212A (en) | The processing method and equipment of high temperature resistant hard brittle material | |
| CN102812538B (en) | Process for reconditioning semiconductor surface to facilitate bonding | |
| CN101556919B (en) | Method for controlling step appearance of SiC matrix etching | |
| WO2010026006A1 (en) | A mixed trimming method | |
| CN103882378B (en) | A kind of preparation method of three boracic acid oxygen calcium yttrium crystal (YCOB) high laser damage threshold anti-reflection films | |
| CN102792419A (en) | Process and structure for high temperature selective fusion bonding | |
| WO2016187913A1 (en) | Chip assembly for measuring electrochemical reaction on solid-liquid phase interface in situ | |
| KR20110115570A (en) | Method for processing a silicon-on-insulator structure | |
| CN103794488B (en) | A kind of lithographic method of substrate | |
| CN114076617B (en) | Surface acoustic wave temperature and pressure double-parameter sensing device and preparation method thereof | |
| Amnache et al. | Capabilities and limits to form high aspect-ratio microstructures by molding of borosilicate glass | |
| Liu et al. | Hydrophilic direct bonding of MgO/MgO for high-temperature MEMS devices | |
| CN103646876A (en) | SiC etching method of steep smooth side wall morphology | |
| US20110305822A1 (en) | Method for manufacturing electromechanical transducer | |
| CN114459647A (en) | Silicon carbide high-temperature pressure sensor based on optical fiber Fabry-Perot and manufacturing method thereof | |
| Wei et al. | Low temperature glass-to-glass wafer bonding | |
| CN103193197B (en) | A kind of micro element movable structure preparation method based on silicon/glass anode linkage | |
| Guyer et al. | Effect of solution pH on the accelerated cracking of nanoporous thin-film glasses | |
| CN112071740B (en) | Method for preparing silicon carbide structure by picosecond laser irradiation | |
| Ono et al. | The role of silanol groups on the reaction of SiO2 and anhydrous hydrogen fluoride gas | |
| CN101817497A (en) | Method for preparing all-dry etching dissolved silicon chip for microstructure manufacturing | |
| LU501838B1 (en) | Processing Method and Equipment of High Temperature Resistant Hard Brittle Materials | |
| WO2020215611A1 (en) | Multi-parameter surface acoustic wave sensing device, manufacturing method, and aircraft monitoring system | |
| CN106904839B (en) | A kind of masking method of glass corrosion | |
| CN110085736A (en) | A kind of manufacturing method and application of thin film single crystal piezoelectric material composite substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190730 |
|
| RJ01 | Rejection of invention patent application after publication |