LU501838B1 - Processing Method and Equipment of High Temperature Resistant Hard Brittle Materials - Google Patents

Abstract

The invention discloses a processing method and equipment of high-temperature resistant hard brittle materials, wherein the processing method of the high-temperature resistant hard brittle materials includes: coating photoresist on the cleaned surface of the high-temperature resistant hard brittle material wafer, and placing a mask plate for photoetching development; Etching the photoetching developed wafer to form a groove for preparing a predetermined structure; The etched wafer is aligned with another wafer, and hot pressing bonding is carried out to make the contact surfaces of the two wafers form permanent bonding surfaces, and the corresponding grooves form predetermined structures such as sealed cavities. The method is suitable for processing and manufacturing high-temperature resistant hard and brittle materials such as gallium lanthanum silicate crystals.

Description

DESCRIPTION LU501838 Processing Method and Equipment of High Temperature Resistant Hard Brittle Materials

TECHNICAL FIELD The invention relates to the technical field of material processing, in particular to a processing method and equipment of high temperature resistant hard brittle materials.

BACKGROUND The operation of spacecraft is often accompanied by severe environment such as high temperature and high rotation, especially in key parts such as hypersonic aircraft surface, aero-engine and gas turbine, where the local temperature even exceeds 800°C. Therefore, in-situ real-time acquisition of temperature, pressure, vibration and other parameters in severe environment is of great significance for material selection, structural design and protective measures of spacecraft. Compared with wired active devices, wireless passive sensing devices based on high-temperature resistant materials have obvious advantages in testing various parameters in harsh environments such as high temperature, high rotation and vibration, especially wireless passive sensing devices based on surface acoustic wave (SAW) principle have superior performance in measuring distance, Q value, volume and anti-interference. However, the piezoelectric substrate used by most existing SAW devices often suffers from cleavage, denaturation and performance degradation in high temperature environment, thus affecting the normal operation of the devices.

Hard and brittle piezoelectric materials, such as La3Ga5S104 (LGS for short) crystal, have excellent high temperature resistance, and will not undergo phase change even at 1400°C. They are ideal materials for manufacturing SAW devices. How to make use of La3Ga5S104 crystal to manufacture specific structures for SAW devices has become an urgent problem to be solved.

SUMMARY The processing method and equipment of high temperature resistant hard brittle materials provided by the invention are used for processing and manufacturing high temperature resistant hard brittle materials such as gallium lanthanum silicate crystals.

The invention provides a processing method of high temperature resistant hard brittle materials, which comprises the following steps: Step 10, coating photoresist on the cleaned wafer surface of high temperature resistant hard brittle material, and placing a mask plate for photoetching development; LU501838 Step 20, etching the wafer after photoetching development to form a groove for preparing a predetermined structure; Step 30, hot-press bonding the etched wafer and another wafer to make the contact surfaces of the two bonded wafers form a permanent bonding surface, and a predetermined structure is formed at the corresponding groove.

The invention also provides processing equipment for high-temperature resistant hard brittle materials, including: Photolithography device, coating photoresist on the cleaned surface of high temperature resistant hard brittle material wafer, and placing mask plate for photoetching development; Etching device, etching the wafer after photoetching development to form a groove for preparing a predetermined structure; and Bonding device, hot-press bonding the etched wafer and another wafer to make the contact surfaces of the two bonded wafers form a permanent bonding surface, and the corresponding groove forms a predetermined structure.

According to the invention, grooves with a predetermined structure are formed by photolithography and etching processes, and the machining accuracy of the grooves can be effectively guaranteed by controlling the machining accuracy of corresponding processes, and the failure rate in the machining process of hard and brittle materials is reduced; The two wafers are directly bonded by hot pressing, so that the atomic energy at the interface of the two wafers forms a stable bond connection, so that the two wafers are integrated due to the bonding strength, which not only realizes the preparation of the predetermined structure of hard and brittle materials, but also enables the device containing the predetermined structure to keep the detection performance stable for a long time in high temperature and harsh environment, thus prolonging the service life of the device.

BRIEF DESCRIPTION OF THE FIGURES In order to more clearly explain the embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention, and for ordinary technicians in the field, other drawings can be obtained according to these drawings without paying any creative effort. LU501838 Fig. 1 is a flow chart of a processing method of a high temperature resistant hard brittle material provided by the first embodiment of the present invention; Fig. 2 is a flow chart of a processing method of a high temperature resistant hard brittle material provided by the second embodiment of the present invention; Fig. 3 1s a schematic diagram of the process flow of groove formation by LGS wet etching in an embodiment of the present invention; Fig. 4 is a schematic diagram of the process flow of forming grooves by LGS plasma etching; Fig. 5 1s a structural schematic diagram of processing equipment for high-temperature resistant hard brittle materials provided by the third embodiment of the present invention; Fig. 6 is a structural schematic diagram of processing equipment for high-temperature resistant hard brittle materials provided by the fourth embodiment of the present invention; Fig. 7 is a structural diagram of the sample fixing device in fig. 6; Fig. 8 is a schematic diagram of the application of the sealed cavity prepared in the embodiment of the present invention to surface acoustic wave devices.

DESCRIPTION OF THE INVENTION In order to make the purpose, technical scheme and advantages of the present invention clearer, the technical scheme in the embodiments of the present invention will be clearly and completely described with reference to the attached drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of them. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of the present invention.

In order to make the technical scheme of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

Fig. 1 is a flow chart of a processing method of high temperature resistant hard brittle materials provided by the first embodiment of the present invention. As shown in fig. 1, the method of this embodiment includes: Step 10, coating photoresist on the cleaned wafer surface of high temperature resistant hard brittle material, and placing a mask plate for photoetching development. LU501838 Hard and brittle piezoelectric materials such as LasGasSiO14 crystal have high temperature resistance, which is not easy to change phase at high temperature. They are ideal materials for manufacturing surface acoustic wave devices. Using LasGasS1014 crystal to manufacture surface acoustic wave devices to detect pressure parameters generally requires a sealed cavity. By sensing the change of propagation speed of surface acoustic wave due to the force deformation of the cavity, the accurate perception of pressure parameters can be realized.

In order to prepare the required cavity on the high-temperature resistant piezoelectric material, the embodiment of the invention firstly prepares the groove for forming the cavity by using the semiconductor device processing technology, which includes the process steps of photolithography, etching and the like, and is similar to the preparation of semiconductor devices; Then, two wafers with etched grooves are hot-pressed and bonded to form a sealed cavity, or one wafer with etched grooves and another wafer with a flat surface are hot-pressed and bonded to form a sealed cavity. In this step, the pattern of the groove to be etched is temporarily transferred to the wafer by photolithography technology. The specific operation of photolithography is similar to that of semiconductor device manufacturing, including wafer cleaning, gluing, exposure and development, etc.

Firstly, the La;GasS1014 wafer is cleaned by acetone, and the residual organic matter on the surface of La3GasSiO14 is removed by isopropanol and mixed solution of H202 and H2SO4. After cleaning, SU-8 photoresist was spin-coated on the surface of La;GasS1014 wafer, where the thickness of the photoresist was 200um to prevent the adhesion problem caused by acid molecules penetrating through the photoresist.

After cleaning, the surface of the wafer is hydrophilic, and the photoresist is mostly hydrophobic. In order to solve the problem of poor adhesion between photoresist and La;GasS1014 edge, HDMS (hexamethyldisilazane) layer is deposited on the surface of LasGasSiO14 wafer to enhance the adhesion of photoresist. That is, before coating photoresist, it also includes the step of tackifying treatment, that is, coating tackifier on the wafer surface. The chemical structure of HMDS makes it easy to bond with the wafer surface and photoresist, thus enhancing the adhesion between photoresist and wafer.

In this embodiment of the invention, photolithography, etching and other processes are used to process the sealed cavity, and the photoresist using negative adhesive can meet the processing accuracy requirements, and the negative adhesive has good adhesion and corrosion resistance 50 1838 Therefore, in this embodiment of the invention, the photoresist using negative adhesive, such as SU-8 photoresist, has a low light absorptivity in the near ultraviolet range, which makes it have good exposure uniformity throughout the photoresist thickness. The pattern of the mask plate is consistent with the shape of the formed cavity. After coating photoresist, the mask plate 1s placed in parallel with the gallium lanthanum silicate substrate coated with photoresist, and then ultraviolet exposure and development are carried out, so that the photoresist at the corresponding cavity of the mask plate is dissolved and removed, and finally the wafer is cleaned with deionized water.

The method of coating photoresist can be steam coating method or spin coating method. The embodiment of the invention gives priority to spin coating method, and the thickness of photoresist can be controlled by controlling the spin speed. The adhesion promoter can also be applied by vapor coating or spin coating.

Step 20, etching the wafer after photoetching development to form a groove for preparing a predetermined structure; The photoresist on the reticle of the wafer after photoetching in step 10 above is dissolved, and the substrate of the wafer is directly exposed. In this step, a groove is formed here by etching. In specific applications, the etching process can adopt wet etching or dry etching.

Wet etching: the mixed solution of hydrochloric acid and phosphoric acid (HCI: H3PO4 = 1: 1) is prepared and heated to 80°C, and the LGS wafer coated with photoresist is etched. This acid mixture makes the surface of LGS smooth while maintaining the surface flatness of LGS wafer, and the temperature in the reaction tank has an important influence on the etching rate. The corrosion rate can be controlled by controlling the temperature in the reaction tank. After the LasGasS1014 is etched for a period of time and meets the groove with the depth, it is cleaned with deionized water, then the SU-8 photoresist is peeled off, and the corrosion effect is observed with a microscope to obtain the groove of the LGS cavity.

Fig. 3 is a schematic diagram of the process flow of groove formation by wet etching of LGS in an embodiment of the present invention. As shown in fig. 3, LGS wafer is cleaned to form clean LGS wafer, then glue leveling is carried out on one side of the wafer, that is, SU-8 photoresist is coated, then a mask plate is placed at the position to be etched on the glue leveling surface, ultraviolet light is irradiated, the photoresist at the mask plate is developed and dissolved,

and then glue leveling is carried out on the other side of the wafer. Then, etching the wafer wifh, 50 1838 HCI/ H3:PO4 solution, etching grooves on the wafer not covered by photoresist, and finally removing photoresist on the wafer surface to obtain LGS wafer with grooves on the surface.

Dry etching: using inductively coupled plasma etching technology (ICP), using deionized water, alcohol and acetone to clean the gallium lanthanum silicate substrate to remove dust, oil stains and organic matters on the surface of the substrate, and using chemical vapor deposition to grow a layer of silicon dioxide (SiO,‚) on the surface of gallium lanthanum silicate as a hard mask material; The LGS wafer with mask is placed in the plasma etching area, and ions in the gas in the reaction chamber bombard the etched wafer surface under the bias of the reaction chamber, forming a damaged layer, thus accelerating the reaction of free active groups in the plasma on its surface. Ion bombardment reflects the anisotropy of dry etching, while the reaction of free active groups is well inhibited due to the deposition of sidewalls. Due to the combination of physical reaction and chemical reaction in dry etching, the size and shape of the pattern can be accurately controlled under the interaction of anisotropy and isotropy, so the precision of the etched groove is higher. Fig. 4 shows the intention of the process flow of forming grooves by LGS plasma etching. As shown in fig. 4, because the size and shape of the pattern can be accurately controlled, a plurality of grooves can be formed at one time by plasma etching, and finally the devices can be prepared by slicing and dividing.

The predetermined structure in the embodiment of the present invention can be used for measuring pressure parameters in the preparation of surface acoustic wave devices.

The sealing cavity can also be a single groove structure, a multi-groove structure or a beam structure for other special purposes.

Step 30: Hot-press bonding the etched wafer and another wafer to make the contact surfaces of the two bonded wafers form a permanent bonding surface, and a predetermined structure is formed at the corresponding groove.

The two wafers bonded in this step can be bonded after the etched wafer is aligned with another non-etched wafer, or two etched wafers can be bonded after being aligned.

If the groove is to form a predetermined structure such as a cavity, and it can still be stably connected in a high-temperature working environment, it is necessary to make the atomic energy at the interface of the two wafers form a stable bond connection, so that the two wafers are integrated due to the bond strength; Therefore, it is necessary to apply certain mechanical pressure and heat treatment after the two wafers are bonded. In the embodiment of the invention, 501838 the direct bonding method of two wafer substrates is adopted, that is, the grooves formed after etching are aligned, so that the surfaces of the two wafers are in direct contact, and pressurized and heated, so that physical and chemical reactions occur at the interface of the wafers to form bond connection, so that the two wafers are permanently bonded, and finally formed into the required predetermined structure. Compared with other methods for forming predetermined structures such as cavities, such as high-temperature adhesive bonding, the predetermined structure formed by the direct bonding method of the present invention not only has high strength, but also maintains an integrated structure in a high-temperature environment, thus maintaining stable performance, thus being more suitable for the application of piezoelectric devices in harsh high-temperature environments.

According to the embodiment of the invention, grooves with a predetermined structure are formed by photolithography and etching processes, and by controlling the processing accuracy of corresponding processes, the processing accuracy of grooves can be effectively guaranteed, and the failure rate in the processing process of hard and brittle materials is reduced; The two wafers are directly bonded by hot pressing, so that the atomic energy at the interface of the two wafers forms a stable bond connection, so that the two wafers are integrated due to the bonding strength, which not only realizes the preparation of the predetermined structure of hard and brittle materials, but also enables the device containing the predetermined structure to keep the detection performance stable for a long time in high temperature and harsh environment, thus prolonging the service life of the device.

In the above embodiments, in order to make the bonding achieve atomic level mutual displacement penetration, the surfaces of the bonded wafers should be kept flat, smooth and clean, and appropriate polishing and cleaning processes can be used to treat the surfaces of the wafers. Fig. 2 is a flow chart of a processing method of high temperature resistant hard brittle materials provided by the second embodiment of the present invention. As shown in fig. 2, the method of this embodiment further includes, on the basis of the first embodiment shown in fig. 1, before the wafer bonding step: Step 21, polishing and hydrophilic treatment are carried out on the surface of the wafer.

The etched LGS cavity is used for bonding to realize the LGS three-dimensional structure with sealed cavity. Before bonding, the pre-bonded LGS substrate is first polished to reduce the surface roughness of the substrate, and then hydrophilic surface treatment is carried out 501838 including wet cleaning and plasma treatment. Specifically, in the application, firstly, the LGS substrate is cleaned by wet method with propanone, alcohol, piranha solution (SPM), standard cleaning solution No.1 (SC1), diluted hydrofluoric acid solution and deionized water in turn. The SCI cleaning solution is a mixture of ammonia, hydrogen peroxide and water, which can remove particulate impurities and polymers on the wafer through oxidation and electrical repulsion.

After cleaning the wafer, oxygen plasma is used to activate the surface of LGS substrate. At the same time, plasma surface treatment can eliminate the pollution of the wafer surface and further reduce the surface roughness. The active oxygen in the plasma treated with oxygen plasma reacts with the organic matter on the material surface, and the oxygen plasma reacts with the organic dirt on the material surface to decompose the organic dirt into carbon dioxide, which can improve the bonding interface and help to improve the bonding strength.

After the above surface treatment, two LGS substrates can be directly bonded by hot pressing. Specifically, the hot pressing bonding includes: Step 31, align the grooves of two wafers whose surfaces have been polished and hydrophilic, or align the wafers whose surfaces have been polished and hydrophilic etched with grooves and the wafers whose surfaces have not been etched with grooves, so that the polished surfaces are directly pre-bonded as samples; Step 32, the sample is fixed in the mold, and pressurized and heated, so that the bonding surfaces of the two wafers are permanently bonded.

After polishing and cleaning the wafer, the embodiment of the invention still adopts the direct bonding method of two wafer substrates, that is to say, the surface pretreated grooves to be sealed to form cavities are aligned, or one wafer with grooves on the surface that has been polished and hydrophilic treated is aligned with another water without grooves on the surface, so that the polished surfaces are in direct contact, and the samples formed by pre-bonding are subjected to high temperature treatment, so that physical and chemical reactions occur at the interface of the wafers to form bond connections, and the two wafers are permanently bonded. During the above-mentioned heating process, continuous pressure is applied to finally form the required sealed cavities and other structures.

The mold for fixing the sample includes upper and lower clamps made of graphite and sleeves for fixing the clamps. The mold can be used to pre-bond and pressurize two wafers at room temperature to form a pre-bonded sample. Then, the sample and the mold are put into, a, 1838 sintering furnace to pressurize the upper and lower surfaces in the vertical direction, and the whole is heated to realize the permanent bonding of the sample, thus obtaining a sealed LGS cavity. Graphite mold has good physical and chemical properties, and it is easy to process, and its strength can still be guaranteed without deformation at high temperature. By adopting the jig and sleeve mold made of graphite, the device accuracy of the wafer can be guaranteed during the process of pressurizing and heating. In the high temperature environment, atoms (Si, La, Ga, O) of the two bonding surfaces break the constraint of the crystal lattice and shift and move, resulting in atom diffusion, resulting in new polar bonds connecting the elements of the two surfaces, forming a predetermined structure such as a sealed cavity.

On the basis of the first embodiment mentioned above, the embodiment of the present invention further enhances the bonding strength of the bonding surface of the wafer with a predetermined structure such as the formed sealed cavity by polishing and hydrophilic treatment on the wafer surface before bonding operation. The die is used for fixed heating and pressurization, so that the shape of the wafer is kept stable during the bonding process, which is beneficial to improving the processing accuracy.

Fig. 5 is a schematic structural diagram of a processing device for high-temperature resistant hard brittle materials provided by the third embodiment of the present invention. As shown in fig. 5, the device of this embodiment of the present invention includes a lithography device 100, an etching device 200 and a bonding device 300, wherein the lithography device 100 is used for coating photoresist on the cleaned surface of a wafer of high-temperature resistant hard brittle materials and placing a mask plate for photoetching development. In practice, the lithographic apparatus 100 may include a gluing device, a mask aligner, an exposure system, etc. The etching device 200 is used to etch the photoetching developed wafer to form a groove for preparing a predetermined structure. In practical application, the etching device 200 can wet etch the corresponding device or dry etch the corresponding etching system.

The lithography apparatus 100 and etching apparatus 200 described above can be the corresponding process equipment in the preparation of semiconductor devices in the prior art, and the embodiments of the present invention will not be described in detail. The bonding device 300 is used for hot-press bonding the etched wafer and another wafer, so that the contact surfaces of the bonded two wafers form a permanent bonding surface, and the corresponding groove forms a predetermined structure. In the bonding device 300 of the embodiment of the present 501838 invention, when bonding two wafers together, it is necessary not only to apply a certain pressure to the wafers, but also to apply a certain high temperature, so that atoms can interpenetrate between the contact interfaces at appropriate temperature and pressure to form polar bonds, thereby realizing permanent bonding, and the bonding interface has good air tightness and long-term stability. In practice, the bonding device 300 can include a container for heating and pressurizing, such as an autoclave, a control system for heating and pressurizing, a gas control system, and a corresponding actuator controlled by the control system and performing corresponding operations, wherein the gas control system is used to control the gas introduced in the bonding process, such as nitrogen, etc. In practice, thermocompression bonding can also be performed in a vacuum environment.

The control software of the bonding device 300 is based on the feedback control principle. In the cavity of the bonding container, according to the ideal gas state equation, the pressure and Par. temperature in the cavity satisfy the following relationship: #7 pg 1s the density of the gas introduced into the cavity, p is the gas pressure, r is the standard gas constant, t is the gas temperature in the cavity, and Mg is the molar mass of the introduced gas.

In the process of heating and pressurizing, the gas pressure and temperature in the cavity are in dynamic balance. According to the above relationship, the parameters are monitored in real time and real-time controlled by software to ensure that the temperature and pressure can be stably maintained within the preset range to meet the actual demand. The two wafers are directly and permanently bonded together by hot pressing, and stable pressure needs to be applied. In specific applications, pressure can be applied by hydraulic devices, and online monitoring and control of hydraulic devices is easy to realize. For example, control by Programmable Logic Controller (PLC) is not only high in control accuracy, but also strong in anti-interference ability, so it can ensure the stability of pressure during the bonding process of hard and brittle materials, and thus effectively reduce the processing failure rate of high-temperature resistant hard and brittle materials.

The equipment in the embodiment of the present invention applies the corresponding process method of the above-mentioned embodiment 1 to process the predetermined structures such as the sealed cavity of high-temperature resistant hard brittle materials, and the technical 50 1838 effect achieved 1s similar, so it will not be described again.

Fig. 6 is a structural schematic diagram of processing equipment for high-temperature resistant hard brittle materials provided by the fourth embodiment of the present invention. As shown in fig. 6, on the basis of the above-mentioned third embodiment, the equipment of the embodiment of the present invention further comprises a surface treatment device 201 for polishing and hydrophilic treatment of the wafer surface; Sample fixing device 202, which aligns the grooves of two wafers whose surfaces have been polished and hydrophilic, or aligns the wafers with grooves etched on the surfaces that have been polished and hydrophilic with the wafers without grooves etched on the surfaces, so that the polished surfaces are directly pre-bonded and fixed in the mold as samples for pressure and heating treatment; And a tackifier treatment device 500 for coating a tackifier on the cleaned wafer surface of high temperature resistant hard brittle material. The surface treatment device 201, the sample fixing device 202 and the tackifying treatment device 500 further included above can be applied to the embodiments of the present invention alone or simultaneously, and can be selected and used according to the precision and requirements of the devices to be processed in specific applications, which is not limited by the embodiments of the present invention.

Fig. 7 is a schematic diagram of the structure of the sample fixing device in fig. 6. As shown in fig. 7, the pre-bonded sample 301 is formed by polishing and cleaning two wafers with etched grooves, aligning and preliminarily pressing; In order to form a permanent bond between the pre-bonded wafer interfaces, it is also necessary to place the sample 301 in an autoclave for heating and pressurizing treatment. Therefore, in order to make the LGS wafer firmly bonded during the bonding process, the embodiment of the present invention uses the sample fixing device to clamp and fix the sample 301. The device includes an upper and lower clamp 303 and a sleeve 304, both of which are made of graphite. The upper and lower clamps 303 clamp two wafers with opposite grooves from the upper and lower directions to apply pressure to form a cavity 302, so as to prevent the failure of device preparation caused by the unstable stress of the upper and lower clamps during the pressurization process. In the embodiment of the present invention, the sample and the upper and lower clamps are placed in the sleeve 304 for stabilization, preliminarily pressurized for pre-bonding, and the sample, together with the upper and lower clamps and the sleeve, is placed in the hot-press furnace when the subsequent hot-press furnace is heated and pressurized. LU501838 Specifically, in application, applying pressure to the bonded two wafers is realized by applying pressure to the upper and lower clamps, and applying pressure to the clamps can be realized by hydraulic device, which is realized by PLC which is convenient for engineering control. PLC control includes PID control, feedforward compensation control and ratio control, which can be selected according to the control requirements. It can control the speed and pressure of hydraulic oil online, realize real-time and stable control of the pressure on the clamps, ensure the stability of applied pressure, and thus facilitate the hot-pressing bonding of hard and brittle materials.

In practical application, when one wafer with etched grooves is directly bonded with another wafer with flat surface without etched grooves, the alignment difficulty of the two wafers can be reduced.

The embodiment of the invention also provides a surface acoustic wave device made of piezoelectric material, which comprises at least one sealed cavity formed on the high-temperature resistant hard brittle material prepared by the method of any of the above embodiments or the equipment of any of the above embodiments.

Fig. 8 is a schematic diagram of the application of the sealed cavity prepared by the embodiment of the present invention to the surface acoustic wave device, in which the cavity 12 is prepared by the process or equipment of the embodiment of the present invention; The thickness of the piezoelectric crystal substrate 1 on the upper and lower sides of the cavity 12 is small. When the piezoelectric crystal substrate 1 bears pressure, the piezoelectric crystal substrate 1 in the cavity 12 will be deformed, so that the propagation speed of surface acoustic waves passing through this piezoelectric crystal substrate 1 will change. By forming the second resonator 3 on the corresponding first surface S1 of the cavity 12, accurate sensing of pressure parameters can be realized.

The piezoelectric crystal substrate 1 is made of high-temperature resistant material, which makes the surface acoustic wave device suitable for high-temperature environment such as aero-engine combustion chamber. The materials known by the technical personnel in the field are hard and brittle materials such as gallium lanthanum silicate crystal.

Finally, it should be noted that the above embodiments are only used to illustrate the technical scheme of the present invention, but not to limit it, Although the present invention has been described in detail with reference to the foregoing embodiments, ordinary technicians in the, 501838 field should understand that it can still modify the technical solutions described in the foregoing embodiments, or equivalently replace some of its technical features, However, these modifications or substitutions do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of each embodiment of the present invention.

Claims (10)

CLAIMS LU501838

1. À processing method of high temperature resistant hard brittle materials, which comprises the following steps: step 10, coating photoresist on the cleaned wafer surface of high temperature resistant hard brittle material, and placing a mask plate for photoetching development; step 20, etching the wafer after photoetching development to form a groove for preparing a predetermined structure; step 30, hot-press bonding the etched wafer and another wafer to make the contact surfaces of the two bonded wafers form a permanent bonding surface, and a predetermined structure is formed at the corresponding groove.

2. The method according to claim 1 is characterized in that before step 30, polishing and hydrophilic treatment of the wafer surface.

3. The method according to claim 2 is characterized in that step 30 comprises: aligning the grooves of two wafers with polished and hydrophilic surfaces, or aligning the wafers with etched grooves on the polished and hydrophilic surfaces with the wafers without etched grooves on the surfaces, so that the polished surfaces are directly pre-bonded as samples; the sample is fixed in the mold, and pressurized and heated, so that the bonding surfaces of the two wafers can be permanently bonded.

4. The method according to claim 1 is characterized in that before applying the photoresist in step 10, further comprises: coating tackifier on the cleaned wafer surface of high temperature resistant hard brittle material.

5. The method according to any one of claims 1-4 is characterized in that the etching in step adopts wet etching or dry etching.

6. The method according to claim 1 is characterized in that the predetermine structure is a sealed cavity.

7. A processing equipment for high-temperature resistant hard brittle materials is characterized by comprising: photolithography device, coating photoresist on the cleaned surface of high temperature resistant hard brittle material wafer, and placing mask plate for photoetching development; etching device, etching the wafer after photoetching development to form a groove for preparing a predetermined structure; and LU501838 bonding device, hot-press bonding the etched wafer and another wafer to make the contact surfaces of the two bonded wafers form a permanent bonding surface, and the corresponding groove forms a predetermined structure.

8. The equipment according to claim 7 is characterized by further comprising a surface treatment device for polishing and hydrophilic treatment of the wafer surface.

9. The equipment according to claim 8 is characterized by further comprising a sample fixing device, aligning the grooves of two wafers whose surfaces have been polished and hydrophilic, or aligning the wafers whose surfaces have been polished and hydrophilic etched with grooves and the wafers whose surfaces have not been etched with grooves, so that the polished surfaces are directly pre-bonded and fixed in the mold as samples for pressure and heating treatment.

10. The equipment according to any one of claims 7-9 is characterized by further comprising a viscosity-increasing treatment device, coating viscosity-increasing agent on the cleaned wafer surface of high temperature resistant hard brittle material.