CN105887205A - 扩散用高温炉 - Google Patents

扩散用高温炉 Download PDF

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Publication number
CN105887205A
CN105887205A CN201610480202.XA CN201610480202A CN105887205A CN 105887205 A CN105887205 A CN 105887205A CN 201610480202 A CN201610480202 A CN 201610480202A CN 105887205 A CN105887205 A CN 105887205A
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Prior art keywords
furnace chamber
thermal resistance
quartz tube
quartz ampoule
tube furnace
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CN201610480202.XA
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English (en)
Inventor
吕耀安
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WUXI HI-NANO TECHNOLOGY Co Ltd
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WUXI HI-NANO TECHNOLOGY Co Ltd
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Priority to CN201610480202.XA priority Critical patent/CN105887205A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18—Controlling or regulating

Abstract

本发明公开了一种扩散用高温炉，包括底座和石英管炉腔；石英管炉腔安装于底座之上；石英管炉腔为竖直柱状，其顶部设置有两个开口；石英管炉腔内设置有热电偶测量装置，热电偶测量传输线路通过第一开口传输至位于石英管炉腔外部的温度控制器；还包括多个加热器和多组热阻丝；多个加热器均与温度控制器相连接；每个加热器上对应连接有一组热阻丝；每组热阻丝螺旋状缠绕在石英管炉腔之外；相邻的热阻丝间隔距离相等；工艺气体通过气流控制器，进而通过第二开口输入石英管炉腔；底座上设置有气体出口；气体出口处安装有压力控制器。本发明在石英管炉腔外间隔均匀的设置有多组热阻丝，所以可以达到对石英管炉腔进行均匀加热的效果。

Description

扩散用高温炉
技术领域
本发明涉及半导体制造领域，具体涉及一种扩散用高温炉。
背景技术
在半导体制造工艺中经常会遇到高温工艺，如氧化、扩散、淀积、退火等工艺，均需要在高温模式下进行，而且所需温度十分高，在某些情况下，甚至需要达到100℃。现有技术中的高温炉，存在着加温不均匀的缺点，如果加温不均匀，则反应用气体所处的温度环境不一致，则反应进程不精确，且难以控制，最终影响产品的良率。
发明内容
针对现有技术的不足，本发明公开了一种扩散用高温炉。
本发明的技术方案如下：
一种扩散用高温炉，包括底座和石英管炉腔；石英管炉腔安装于底座之上；石英管炉腔为竖直柱状，其顶部设置有两个开口；石英管炉腔内设置有热电偶测量装置，热电偶测量传输线路通过第一开口传输至位于石英管炉腔外部的温度控制器；还包括多个加热器和多组热阻丝；多个加热器均与温度控制器相连接；每个加热器上对应连接有一组热阻丝；每组热阻丝螺旋状缠绕在石英管炉腔之外；相邻的热阻丝间隔距离相等；工艺气体通过气流控制器，进而通过第二开口输入石英管炉腔；底座上设置有气体出口；气体出口处安装有压力控制器。
本发明的有益技术效果是：
本发明在石英管炉腔外间隔均匀的设置有多组热阻丝，所以可以达到对石英管炉腔进行均匀加热的效果。
附图说明
图1是本发明的示意图。
具体实施方式
图1是本发明的示意图。如图1所示，本发明包括底座和石英管炉腔；石英管炉腔安装于底座之上；石英管炉腔为竖直柱状，其顶部设置有两个开口；石英管炉腔内设置有热电偶测量装置，热电偶测量传输线路通过第一开口传输至位于石英管炉腔外部的温度控制器；还包括多个加热器和多组热阻丝；多个加热器均与温度控制器相连接；每个加热器上对应连接有一组热阻丝；每组热阻丝螺旋状缠绕在石英管炉腔之外；相邻的热阻丝间隔距离相等；工艺气体通过气流控制器，进而通过第二开口输入石英管炉腔；底座上设置有气体出口；气体出口处安装有压力控制器。
本发明的工作原理为，工艺气体通过气流控制器，恰当调整气体流量之后，通过第二开口通入石英管炉腔，与放置在石英管炉腔内的晶圆片进行反应。加热器通过加热热阻丝，加热石英管炉腔。而反应过程中，石英管炉腔中的热电偶测量反应温度，并将反应温度的信息传送至温度控制器，温度控制器又控制多个加热器，对加热器的输出温度进行反馈调节。
反应之后的气体通过底座下部的气体出口排出。由于气体出口处设置有压力控制器，所以底座下方的气体出口除了可以排出气体外，还可以控制石英管炉腔中的反应压强。
以上所述的仅是本发明的优选实施方式，本发明不限于以上实施例。可以理解，本领域技术人员在不脱离本发明的精神和构思的前提下直接导出或联想到的其他改进和变化，均应认为包含在本发明的保护范围之内。

Claims (1)

1.一种扩散用高温炉，其特征在于，包括底座和石英管炉腔；石英管炉腔安装于底座之上；石英管炉腔为竖直柱状，其顶部设置有两个开口；石英管炉腔内设置有热电偶测量装置，热电偶测量传输线路通过第一开口传输至位于石英管炉腔外部的温度控制器；还包括多个加热器和多组热阻丝；多个加热器均与温度控制器相连接；每个加热器上对应连接有一组热阻丝；每组热阻丝螺旋状缠绕在石英管炉腔之外；相邻的热阻丝间隔距离相等；工艺气体通过气流控制器，进而通过第二开口输入石英管炉腔；底座上设置有气体出口；气体出口处安装有压力控制器。
CN201610480202.XA 2016-06-27 2016-06-27 扩散用高温炉 Pending CN105887205A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107385514A (zh) * 2017-07-27 2017-11-24 晶科能源有限公司 一种单晶硅炉退火装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2636178Y (zh) * 2003-06-17 2004-08-25 北京七星华创电子股份有限公司 立式加热炉的专用炉体
CN102534803A (zh) * 2012-01-04 2012-07-04 北京七星华创电子股份有限公司 立式扩散炉电器控制系统及控制方法
CN103262216A (zh) * 2011-01-28 2013-08-21 普尔·文图拉公司 热扩散腔室

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2636178Y (zh) * 2003-06-17 2004-08-25 北京七星华创电子股份有限公司 立式加热炉的专用炉体
CN103262216A (zh) * 2011-01-28 2013-08-21 普尔·文图拉公司 热扩散腔室
CN102534803A (zh) * 2012-01-04 2012-07-04 北京七星华创电子股份有限公司 立式扩散炉电器控制系统及控制方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107385514A (zh) * 2017-07-27 2017-11-24 晶科能源有限公司 一种单晶硅炉退火装置
CN107385514B (zh) * 2017-07-27 2023-11-28 晶科能源股份有限公司 一种单晶硅炉退火装置

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