CN105874022A - Conductive film-like adhesive and dicing tape with film-like adhesive - Google Patents
Conductive film-like adhesive and dicing tape with film-like adhesive Download PDFInfo
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- CN105874022A CN105874022A CN201480072317.4A CN201480072317A CN105874022A CN 105874022 A CN105874022 A CN 105874022A CN 201480072317 A CN201480072317 A CN 201480072317A CN 105874022 A CN105874022 A CN 105874022A
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- adhesive
- membranaceous
- electric conductivity
- particle
- membranaceous adhesive
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/10—Adhesives in the form of films or foils without carriers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Dicing (AREA)
- Conductive Materials (AREA)
Abstract
Provided are: a conductive film-like adhesive which is capable of suppressing migration and enables the production of a highly reliable semiconductor device; and a dicing tape with a film-like adhesive. The present invention is a conductive film-like adhesive which contains conductive particles and has a time from the start of a migration test based on a deionization water drop method to the occurrence of migration of 500 seconds or more. It is preferable that the film-like adhesive has a chlorine ion concentration of 20 ppm or less.
Description
Technical field
The present invention relates to the membranaceous adhesive of electric conductivity and the cutting belt with membranaceous adhesive.
Background technology
Semiconductor element is fixed while keeping electrically connecting with die-attach area etc. by the manufacture of semiconductor device
Method (so-called chip bonding method) from the beginning of conventional gold-silicon eutectic, from the method by solder develop into by
The method of the resin glue of electric conductivity.
But, in using the method for resin glue of electric conductivity, there are in uneven thickness, the pad of resin glue because of resin
Oozing out of glue and situation about being contaminated.Replace resin glue it is therefore proposed cross and use the membranaceous adhesive with electric conductivity
Technology (with reference to patent documentation 1).
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 6-145639 publication
Summary of the invention
Invent problem to be solved
Distinguish, once the membranaceous adhesive of electric conductivity and adherend or the electrode weldering being formed on semiconductor element
The circuit element such as dish or pattern wiring contacts, and will produce composition contained in adhesive because of the electrolysis caused by potential difference
Elapsing the phenomenon being referred to as migration oozed out from adhesive in time, this phenomenon is the most gradually considered problem.In recent years, along with half
The slimming of conductor device, miniaturization advance, and the spacing between circuit element becomes narrow and small, it addition, also high at high temperature in imagination
Under the situation of wet lower use, migrate the reliability on semiconductor device and have many impacts, the most likely at circuit
It is short-circuited between key element and greatly damages reliability.
The present invention completes in view of described problem, its object is to, it is provided that can suppress migration, can manufacture height can
By the membranaceous adhesive of electric conductivity of the semiconductor device of property and the cutting belt with membranaceous adhesive.
For the method solving problem
That is, the present invention provides a kind of membranaceous adhesive of electric conductivity, and it contains electroconductive particle,
Migration test based on deionized water drop purgation from on-test to migrate occur time be more than 500 seconds.
The membranaceous adhesive of this electric conductivity is (hereinafter also referred to " membranaceous adhesive ".) move due to based on deionized water drop purgation
Shift test from on-test to migrate occur time (hereinafter also referred to " migration time of origin ".) the longest, reach 500 seconds with
On, therefore can suppress the migration of adhesive component with the composition forming electroconductive particle as representative, though narrow having
In the case of the little circuit element changed, it is also possible to improve the reliability of semiconductor device.If migrating time of origin less than 500
Second, then the migration of adhesive component advances rapidly, it is possible to reduce the reliability of semiconductor device.And, migration test
Step record based on embodiment.
In this membranaceous adhesive, the preferably concentration of chloride ion is below 20ppm.Thus, it is possible to reduce and made by chloride ion
The ionizing of the electroconductive particle composition become, prevents from migrating with higher level.
This membranaceous adhesive is formed preferably by wet coating method.Thus, it is possible to need not continue to use existing with significantly alterring
Some coating processes, can improve production efficiency.
The thickness of this membranaceous adhesive is preferably below more than 5 μm and 100 μm.By the lower limit of thickness is set to above-mentioned model
Enclose, even if making the interval of semiconductor element and adherend change in middle generation warpages such as semiconductor elements, it is also possible to obtain
Obtain bond area enough.It addition, by the upper limit of thickness is set to above-mentioned scope, be possible to prevent the excessive of membranaceous adhesive
Ooze out, thus prevent the pollution of the periphery key elements such as electrode pad.
Described electroconductive particle preferably comprises sheets of conductive particle,
The amount of the described sheets of conductive particle for the total amount of described electroconductive particle is more than 5 weight %
Below 100 weight %.
Containing sheets of conductive particle (the most also referred to as " platy particle ".) the membranaceous adhesive of electric conductivity in, because of sheet
Between shape particle, generating plane contacts and forms conductive path.On the other hand, if only coordinating spherical electroconductive particle (to be also referred to as below
" spherical particle ".), then can form conductive path because of the point cantact between spherical particle.Thus, containing the conduction of platy particle
Property membranaceous adhesive compared with the adhesive containing only spherical particle, it is possible to obtain excellent electric conductivity.It addition, by by lamellar
The content of particle is set to above-mentioned scope, can effectively give electric conductivity to membranaceous adhesive.
The most described electroconductive particle contains spherical electroconductive particle,
In the particle size distribution of described spherical electroconductive particle, the particle size range of 0.2 μm~0.8 μm exists 1 peak
, in the particle size range of 3 μm~15 μm, there is 1 peak diameter B in value particle diameter A,
The ratio of described peak diameter B and described peak diameter A is 5~15.
The particle size distribution of electroconductive particle exist in the membranaceous adhesive of electric conductivity of peak diameter A and peak diameter B,
Due between the spherical particle with peak diameter B (gap), it is filled with the spherical particle with peak diameter A, therefore shape
Become the contact point between multiple spherical particle.Therefore, it is possible to obtain excellent electric conductivity.
The content of the described electroconductive particle in the membranaceous adhesive of described electric conductivity is preferably more than 30 weight % and 95 weights
Amount below %.By being set to more than 30 weight %, easily formed and be enough to give the conductive path of required electric conductivity.The opposing party
Face, if below 95 weight %, is then easily formed membranaceous.Furthermore it is possible to prevent the membranaceous adhesive closing force with metal level
Reduce.
This membranaceous adhesive is preferably possibly together with curable resin.Thus, it is possible to membranaceous adhesive after raising heat cure
Heat stability.
In the present invention, also including the cutting belt with membranaceous adhesive, it possesses: has base material and is configured on this base material
Adhesive phase cutting belt and
The membranaceous adhesive of this electric conductivity being configured on described adhesive phase.
By membranaceous for described electric conductivity adhesive with described cutting belt with the peeling rate of 300mm/min, the stripping temperature of 25 DEG C
Peeling force when degree, the peel angle of 180 ° are peeled off is preferably more than 0.01N/20mm and below 3.00N/20mm.By by upper
State peeling force and be set to more than 0.01N/20mm, be possible to prevent chip during cutting to disperse.On the other hand, by by above-mentioned peeling force
It is set to below 3.00N/20mm, it is possible to obtain good pick.
Accompanying drawing explanation
Fig. 1 is the constructed profile of membranaceous adhesive.
Fig. 2 is the constructed profile of the cutting belt with membranaceous adhesive.
Fig. 3 is the constructed profile of the cutting belt with membranaceous adhesive of variation.
Fig. 4 is to represent the section of the outline of the appearance of configuring semiconductor wafer in the cutting belt with membranaceous adhesive
Figure.
Fig. 5 is the profile of the outline of the appearance after representing semiconductor wafer singualtion.
Fig. 6 is the constructed profile of the adherend with semiconductor chip.
Fig. 7 is the constructed profile of semiconductor device.
Fig. 8 is the top view of the step schematically showing migration test.
Detailed description of the invention
Hereinafter will enumerate embodiment, the present invention is described in detail, but the present invention is not limited to these in fact
Execute mode.Wherein, in part or all of figure, omit unwanted part for explanation, in addition to be prone to
Bright, there is the part of diagram after zooming in or out etc..
[membranaceous adhesive]
As it is shown in figure 1, the form of the membranaceous adhesive 3 of embodiment 1 is membranaceous.Membranaceous adhesive 3 have electric conductivity and
Thermosetting.
Membranaceous adhesive 3 is in order to manufacture semiconductor device and to use.For the manufacture method of semiconductor device, will be rear
Face describes in detail.
The time occurred to migration from on-test of the migration test based on deionized water drop purgation of membranaceous adhesive 3
It it is more than 500 seconds.Migrate time of origin and be preferably more than 1000 seconds, more preferably more than 1500 seconds.Owing to migrating time of origin
Shown in range set forth above the longest, therefore can suppress moving of the adhesive component with the composition forming electroconductive particle as representative
Move.Even if as a result of which it is, have by the semiconductor device of narrowing circuit element in hot and humid lower use, it is also possible to carry
High reliability.If migrating time of origin to be less than 500 seconds, then the migration of adhesive component advances rapidly, it is possible to reduces and partly leads
The reliability of body device.
The concentration of the chloride ion of membranaceous adhesive 3 is preferably below 20ppm, more preferably below 15ppm, further preferably
For below 10ppm.Thus, it is possible to reduce caused by chloride ion adhesive component, particularly electroconductive particle composition from
Sonization, thus prevent from migrating with higher level.
Membranaceous adhesive 3 preferably comprises thermoplastic resin.As thermoplastic resin, natural rubber, butyl rubber can be enumerated
Glue, isoprene rubber, neoprene, vinyl-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-propylene
Acid ester copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, 6-nylon or 6,6-nylon etc.
The saturated polyester resins such as polyamide, phenoxy resin, acrylic resin, PET or PBT, polyamide-imide resin or
Fluororesin etc..In the middle of these thermoplastic resins, particularly preferred ionic impurity is few and thermostability is high, may insure that semiconductor element
The acrylic resin of reliability.
As acrylic resin, it is not particularly limited, can enumerate that there is carbon number less than 30, particularly carbon former
One kind or two or more the gathering as composition of the ester of the acrylic or methacrylic acid of the alkyl of the straight or branched of subnumber 4~18
Compound (acrylic copolymer) etc..As described alkyl, such as can enumerate methyl, ethyl, propyl group, isopropyl, normal-butyl,
The tert-butyl group, isobutyl group, amyl group, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl group, iso-octyl, nonyl, different nonyl
Base, decyl, isodecyl, undecyl, lauryl, tridecyl, myristyl, stearyl, octadecyl or dodecyl
Deng.
It addition, as other monomers of formation polymer (acrylic copolymer), be not particularly limited, such as can lift
Go out acrylic acid, methacrylic acid, carboxy ethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or .beta.-methylacrylic acid etc.
Such anhydride monomers such as such carboxyl group-containing monomer, maleic anhydride or itaconic anhydride, (methyl) acrylic acid 2-hydroxy methacrylate,
(methyl) acrylic acid 2-hydroxy propyl ester, (methyl) acrylic acid 4-hydroxybutyl, (methyl) acrylic acid own ester of 6-hydroxyl, (first
Base) acrylic acid 8-hydroxyl monooctyl ester, (methyl) acrylic acid 10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) acrylic acid 12-hydroxylauric ester or third
Such hydroxyl monomer, styrene sulfonic acid, allyl sulfonic acid, 2-(methyl) propylene such as olefin(e) acid (4-hydroxymethylcyclohexyl) methyl ester
Amide groups-2-methyl propane sulfonic acid, (methyl) acryamidopropanesulfonic acid, (methyl) acrylic acid sulphur propyl ester or (methyl) acryloyl
Epoxide LOMAR PWA EINECS 246-676-2 etc. are such containing such phosphorous acid-based monomers such as sulfonic group monomer or acryloyl phosphoric acid 2-hydroxy methacrylate.
In the middle of acrylic resin, preferable weight-average molecular weight is the resin of more than 100,000, more preferably 300,000~3,000,000
Resin, the resin of further preferred 500,000~2,000,000.This is because, if in above-mentioned numerical range, then cementability and thermostability
Excellent.And, weight average molecular weight is the value utilizing GPC (gel permeation chromatography) to measure and utilize polystyrene conversion to calculate.
The glass transition temperature of thermoplastic resin is preferably more than-40 DEG C, more preferably more than-35 DEG C, further
It is preferably more than-25 DEG C.If less than-40 DEG C, the most membranaceous adhesive 3 is tacky, is excessively close to cutting belt and has pick
The trend being deteriorated.It addition, the glass transition temperature of thermoplastic resin is preferably less than-5 DEG C, more preferably less than-10 DEG C,
More preferably less than-11 DEG C.If higher than-10 DEG C, then elastic modelling quantity uprises, and has and is difficult in a low temperature of about 40 DEG C
Membranaceous adhesive 3 is attached on semiconductor wafer the trend of (low temperature attaching property reduces).If it addition, the glass of thermoplastic resin
Change transition temperature and be less than-5 DEG C, then can improve the mobility of membranaceous adhesive 3 near heat curing temperature, easily utilize
Space is eliminated in heating under pressure.
In this specification, the glass transition temperature of thermoplastic resin refers to the theoretical value utilizing Fox formula to obtain.
Membranaceous adhesive 3 preferably comprises the curable resins such as thermosetting resin.Thus, it is possible to raising heat stability.
As curable resin, phenolic resin, amino resins, unsaturated polyester resin, epoxy resin, poly-ammonia can be enumerated
Ester resin, silicones or thermoset polyimide resin etc..The particularly preferably chlorine plasma impurity of corrosion resistant semiconductor element
Deng poor epoxy resin.It addition, as the preferred phenolic resin of firming agent of epoxy resin.
It is not particularly limited as epoxy resin, such as, can use bisphenol A-type, bisphenol-f type, bisphenol S type, brominated bisphenol
A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolac type, orthoresol novolac type, three
The difunctional epoxy resin such as (hydroxyphenyl) methane type, four (hydroxyphenyl) ethane type or polyfunctional epoxy resin or hydantoin type,
The epoxy resin such as triglycidyl isocyanurate type or glycidic amine type.Particularly preferably linear in the middle of these epoxy resin
Phenol aldehyde type epoxy resin, biphenyl type epoxy resin, three (hydroxyphenyl) methane type resin or four (hydroxyphenyl) ethane type epoxy resin.
This is because, these epoxy resin are imbued with and the excellence such as the reactivity of phenolic resin as firming agent, thermostability.
Phenolic resin is the material that the firming agent as epoxy resin plays a role, such as, can enumerate phenol novolac
Resin, phenol aralkyl resin, cresol novalac resin, tert-butyl phenol linear phenolic resin, nonyl phenol novolac
The polycarboxylated styrenes etc. such as the novolac type phenolic resin such as resin, first rank novolac type phenolic resin, poly(4-hydroxystyrene).Special
Phenol linear phenolic resin in the middle of these phenolic resin not preferred, phenol aralkyl resin.This is because, can improve and partly lead
The connection reliability of body device.
For the mixing ratio of epoxy resin Yu phenolic resin, the most preferably with relative to every 1 in epoxy resin ingredient
The mode that equivalent epoxy radicals makes the hydroxyl in phenolic resin be 0.5~2.0 equivalents coordinates.More preferably 0.8~1.2 equivalents.I.e.
Because if both mixing ratios depart from described scope, then will not carry out sufficient curing reaction, the characteristic of solidfied material is the most bad
Change.
Membranaceous adhesive 3 preferably comprises at the curable resin that 25 DEG C is solid and is aqueous curable tree at 25 DEG C
Fat.Thus, it is possible to obtain good low temperature attaching property.
In this specification, so-called is aqueous at 25 DEG C, refers to that viscosity is less than 5000Pa s when 25 DEG C.On the other hand, institute
Meaning is solid at 25 DEG C, refers to that viscosity is more than 5000Pa s when 25 DEG C.And, viscosity can use Thermo
The model HAAKE Roto VISCO1 of Scientific company measures.
In membranaceous adhesive 3, for the total amount of curable resin in the curable tree that 25 DEG C is solid
The content of fat is preferably more than 10 weight %, more than more preferably 12 weight %.If less than 10 weight %, the most membranaceous adhesive 3
Tacky, have the trend being excessively close to and make pick be deteriorated with cutting belt.On the other hand, relative to the total of curable resin
The content at the curable resin that 25 DEG C is solid for amount is preferably below 60 weight %, more preferably 30 weight % with
Under, more preferably below 20 weight %.If more than 60 weight %, then having and be difficult to membranaceous in a low temperature of about 40 DEG C
Adhesive 3 is attached on semiconductor wafer the trend of (low temperature attaching property reduces).
Thermoplastic resin and the total content of curable resin in membranaceous adhesive 3 are preferably more than 5 weight %, more excellent
Elect more than 10 weight % as.If more than 5 weight %, then easily keep the shape as film.It addition, thermoplastic resin and solidification
The total content of property resin is preferably below 70 weight %, below more preferably 60 weight %.If below 70 weight %, then leading
Conductive particles can embody electric conductivity rightly.
In membranaceous adhesive 3, the weight of the weight/curable resin of thermoplastic resin is preferably 50/50~10/90,
More preferably 40/60~15/85.If the ratio of thermoplastic resin is more than 50/50, then have the trend that heat stability is deteriorated.Separately
On the one hand, if the ratio of thermoplastic resin is less than 10/90, then the trend being difficult to membranization is had.
Membranaceous adhesive 3 is containing electroconductive particle.Thus, it is possible to give electric conductivity to membranaceous adhesive 3.As electric conductivity
Particle, can enumerate gold particle, silver particles, copper particle, coating particles etc..
Coating particles possesses core particle and the coating film of cladding core particle.Core particle can be electric conductivity, dielectric
Any one, such as, can use glass particle etc..As coating film, the film containing gold, the film containing silver can be enumerated, contain
The film etc. of copper.
The mean diameter of electroconductive particle is not particularly limited, but the thickness preferably with respect to membranaceous adhesive 3 is
More than 0.001 times (more than thickness × 0.001 of membranaceous adhesive 3), more preferably more than 0.1 times.If less than 0.001 times, then
It is difficult to be formed conductive path, the trend of the conductive instability of meeting.It addition, the mean diameter of electroconductive particle is preferably with respect to film
The thickness of shape adhesive 3 is less than 1 times (below the thickness of membranaceous adhesive 3), more preferably less than 0.8 times.If more than 1 times,
Then have the danger causing chip rupture.And, the mean diameter of electroconductive particle is to utilize the particle size distribution meter of luminosity formula
(HORIBA system, device name;LA-910) value obtained.
The proportion of electroconductive particle is preferably more than 0.7, and more preferably more than 1.If less than 0.7, then make adhesive group
During polymer solution (varnish), electroconductive particle can float, and being dispersed with of electroconductive particle may become uneven.It addition, electric conductivity
The proportion of particle is preferably less than 22, and more preferably less than 21.If more than 22, then electroconductive particle easily settles, electric conductivity grain
Being dispersed with of son may become uneven.
Electroconductive particle can contain sheets of conductive particle, spherical electroconductive particle, needle-like conductive particle, thread lead
Conductive particles etc..Wherein, electroconductive particle preferably comprises sheets of conductive particle, spherical electroconductive particle.
As platy particle, such as, can enumerate the particle of the lamellar that aspect ratio is more than 5.If more than 5, then lamellar grain
It is susceptible to face contact between son, conductive path can be readily formed.Aspect ratio is preferably more than 8, and more preferably more than 10.
On the other hand, aspect ratio is preferably less than 10000, and more preferably less than 100, more preferably less than 70, particularly preferably
Less than 50.
The aspect ratio of platy particle is the ratio (average major diameter/average thickness) of average major diameter and average thickness.This specification
In, the average major diameter of platy particle is by utilizing scanning electron microscope (SEM) to observe the section of membranaceous adhesive 3, survey
The major diameter of 100 platy particles surely randomly choosed and the meansigma methods that obtains.It addition, the average thickness of platy particle is by profit
Observe the section of membranaceous adhesive 3 with scanning electron microscope (SEM), measure the thickness of 100 platy particles randomly choosed
The meansigma methods spent and obtain.
The average major diameter of platy particle is preferably more than 0.5 μm, more than more preferably 1.0 μm.If more than 0.5 μm, then
The contact probability of platy particle improves, and easily obtains conducting.On the other hand, the average major diameter of platy particle be preferably 50 μm with
Under, below more preferably 30 μm.If below 50 μm, then it is difficult to produce the sedimentation of the particle in coating clear coat stage, can make
Make stable coating varnish.
The content of the platy particle for the total amount of electroconductive particle is preferably more than 5 weight %, more preferably
It is more than 10 weight %.The content of the platy particle for the total amount of electroconductive particle can also be 100 weight %,
But below preferably 50 weight %, below more preferably 20 weight %.Thus, to the imparting of the electric conductivity of membranaceous adhesive just
It is easy to become.
Electroconductive particle preferably comprises spherical electroconductive particle.
In the particle size distribution of spherical particle, preferably there are at least 2 peak diameter, i.e. peak diameter A and peak diameter
B.For example, it is preferable to there is 1 peak diameter A in the particle size range of 0.2 μm~0.8 μm, in the particle size range of 3 μm~15 μm
There is 1 peak diameter B.In membranaceous adhesive 3, fill between the spherical particle with peak diameter B and there is peak diameter A
Spherical particle, be consequently formed the contact point between multiple spherical particle.Therefore, it is possible to obtain excellent electric conductivity.
If the particle size range more than 0.2 μm exists peak diameter A, then it is difficult to produce the cohesion between spherical particle.
More preferably there is peak diameter A in the particle size range more than 0.5 μm.On the other hand, if in the particle size range below 0.8 μm
There is peak diameter A, then can fill the spherical particle with peak diameter A between the spherical particle with peak diameter B.
More preferably there is peak diameter A in the particle size range below 0.75 μm.
If the particle size range more than 3 μm exists peak diameter B, then can be at the spherical particle with peak diameter B
Between fill there is the spherical particle of peak diameter A.More preferably there is peak diameter B in the particle size range more than 3.5 μm.Separately
On the one hand, if there is peak diameter B in the particle size range below 15 μm, then surface roughness when making membranaceous is pressed down
System, can be the most bonding with adherend.Particle size range below 10 μm more preferably exists peak diameter B, the most excellent
It is selected in the particle size range of below 8 μm existence, particularly preferably the particle size range below 6 μm exists.
The ratio (peak diameter B/ peak diameter A) of peak diameter B and peak diameter A be preferably more than 5, more preferably 7 with
On.If more than 5, then can fill the spherical particle with peak diameter A between the spherical particle with peak diameter B.
On the other hand, the ratio of peak diameter B and peak diameter A is preferably less than 15, and more preferably less than 10.If less than 15, then may be used
Spherical particle is filled with high density.
In the particle size distribution of spherical particle, it is also possible to there is the peak diameter beyond peak diameter A and peak diameter B.
The mean diameter of spherical particle is preferably more than 1 μm, more than more preferably 1.5 μm.If it is more than 1 μm, the most permissible
Obtain good concavo-convex tracing ability.It addition, the mean diameter of spherical particle is preferably below 10 μm, below more preferably 8 μm, enter
One step is preferably below 5 μm.If below 10 μm, then film formability is good.And, the particle size distribution of spherical particle and average particle
Footpath can utilize following method to measure.
(particle size distribution of spherical particle and the mensuration of mean diameter)
Membranaceous adhesive 3 is put into crucible, applies heat-flash and make membranaceous adhesive 3 be ashed.The ash of gained is scattered in
Pure water carries out 10 minutes ultrasonic Treatment, uses laser diffraction and scattering formula particle size distribution device (Beckman Kurt
Company's system, " LS 13 320 ";Damp process) obtain particle size distribution (volume reference) and mean diameter.
The content of the spherical particle for the total amount of electroconductive particle is preferably more than 5 weight %, more preferably
It is more than 80 weight %, more preferably more than 90 weight %, particularly preferably 100 weight %.Thus, it is possible to increase ball
Contact point between shape particle and improve electric conductivity.
The content of the electroconductive particle in membranaceous adhesive 3 is preferably more than 30 weight %, more preferably 40 weight % with
On, more preferably more than 60 weight %, more than particularly preferably 70 weight %.If less than 30 weight %, then having and be difficult to
Form the trend of conductive path.It addition, the content of electroconductive particle is preferably below 95 weight %, more preferably 94 weight % with
Under.If more than 95 weight %, then having the trend being difficult to membranization.It addition, have the trend that closing force reduces.
Membranaceous adhesive 3 can also the most suitably contain, beyond described composition, the compounding ingredient generally used when manufacturing film,
Such as cross-linking agent etc..
Membranaceous adhesive 3 can utilize usual way manufacture, and preferred wet coating method from the standpoint of productivity ratio.
For example, it is possible to by making containing the adhesive compound solution of described each composition, by adhesive compound solution with reach to
Determine after the mode of thickness coats and form coated film on base material partition, to make this coated film be dried, and manufacture membranaceous adhesive 3.
As solvent used in adhesive compound solution, it is not particularly limited, but preferably can be by described each one-tenth
Divide dissolving, mixing or scattered organic solvent equably.Such as can enumerate dimethylformamide, dimethyl acetylamide, N-first
Ketone solvent, toluene, the dimethylbenzene etc. such as base ketopyrrolidine, acetone, butanone, Ketohexamethylene.Coating process is not particularly limited.Make
For the method for solvent application, such as, can enumerate die coating machine, gravure coater, roll coater, reverse roll coater, funny point-type scraper
Coating machine, tubular type knife type coater, silk screen printing etc..Wherein, from the standpoint of the uniformity of coating thickness is high, preferably die coating
Machine.
As base material partition, it is possible to use polyethylene terephthalate (PET), polyethylene, polypropylene or utilize fluorine
The removers such as class remover, chain alkyl esters of acrylic acid remover have carried out plastic foil or the paper etc. of surface coating.As glue
The coating process of adhesive composition solution, such as, can enumerate roller coat, silk screen coating, intaglio plate coating etc..It addition, coated film is dry
Dry condition is not particularly limited, such as can be to carry out the baking temperature of 70~160 DEG C, the drying time of 1~5 minute.
As the manufacture method of membranaceous adhesive 3, such as, it also is adapted for as described each composition mixer being mixed, by gained
Mixture compressing and manufacture the method etc. of membranaceous adhesive 3.Planetary mixer etc. can be enumerated as mixer.
The thickness of membranaceous adhesive 3 is not particularly limited, but more than preferably 5 μm, more than more preferably 15 μm.If it is little
In 5 μm, then can produce the position the most bonding with the semiconductor wafer that warpage occurs or semiconductor chip, bond area can become not
Stable.It addition, the thickness of membranaceous adhesive 3 is preferably below 100 μm, below more preferably 50 μm.If more than 100 μm, then can
Make membranaceous adhesive 3 exceedingly ooze out because of the load of chip stickup, thus pad can be polluted.
The surface roughness (Ra) of membranaceous adhesive 3 is preferably 0.1~5000nm.If less than 0.1nm, then tired on coordinating
Difficult.On the other hand, if more than 5000nm, then the attaching with adherend when chip is pasted is likely to decrease.
The resistivity of membranaceous adhesive 3 is the lowest more good, and for example, 9 × 10-2Below Ω m.If 9 × 10-2Ω m with
Under, then electric conductivity is good, can tackle small-sized, high-density installation.On the other hand, resistivity is preferably 1 × 10-6More than Ω m.
The thermal conductivity of membranaceous adhesive 3 is the highest more good, for example, more than 0.5W/m K.If more than 0.5W/m K, then
Thermal diffusivity is good, can tackle small-sized, high-density installation.On the other hand, if less than 0.5W/m K, then poor radiation, heat stores
Long-pending, it is possible to make electric conductivity deteriorate.
The storage tensile modulus of 120 DEG C of membranaceous adhesive 3 is preferably below 10MPa, more preferably below 5MPa.If
Below 10MPa, then the mobility of the membranaceous adhesive 3 near heat curing temperature is high, easily utilizes the heating under pressure to eliminate sky
Gap.The storage tensile modulus of 120 DEG C is preferably more than 0.01MPa, more preferably more than 0.05MPa.If more than 0.01MPa,
The most membranaceous adhesive 3 is difficult to ooze out.And, the storage tensile modulus of 120 DEG C can utilize following method to measure.
(mensuration of the storage tensile modulus of 120 DEG C)
From membranaceous adhesive 3, cut out the mensuration sheet of the strip of vertical 30mm, wide 10mm, thick 400 μm.To measuring sheet, use
Fixing determination of viscoelasticity device (RSA-II, Rheometric Scientific company system) is at frequency 1Hz, programming rate 10
Chuck width 22.6mm, 0 DEG C~the storage tensile modulus of 200 DEG C is measured under conditions of DEG C/min.
The storage tensile modulus of 120 DEG C can utilize the glass transition temperature of thermoplastic resin, the joining of electroconductive particle
Resultants etc. control.Such as, by coordinating the thermoplastic resin that glass transition temperature is low, the stretching storage of 120 DEG C can be reduced
Can modulus.
Membranaceous adhesive 3 is used in the manufacture of semiconductor device.Wherein it is possible to be suitably used for power semiconductor especially
In the manufacture of device.Specifically, can be as the core by bonding with semiconductor chip for the adherends such as lead frame (chip stickup)
Sheet adhesive film uses.As adherend, lead frame, built-in inserted plate, semiconductor chip etc. can be enumerated.Wherein, preferred leadframe.
Membranaceous adhesive 3 preferably uses with the form of the cutting belt with membranaceous adhesive.If using with this form, then may be used
To dispose the semiconductor wafer of the state being attached in the cutting belt with membranaceous adhesive, therefore can reduce with individually half
The chance of conductor object handling, the property disposed is good.Thus, even slim semiconductor wafer in recent years, it is also possible to well
Dispose.
[with the cutting belt of membranaceous adhesive]
Cutting belt with membranaceous adhesive is illustrated.
As in figure 2 it is shown, the cutting belt 10 with membranaceous adhesive possesses cutting belt 1 and is configured at the film in cutting belt 1
Shape adhesive 3.Cutting belt 1 possesses base material 11 and the adhesive phase 12 being configured on base material 11.Membranaceous adhesive 3 is configured at bonding
In oxidant layer 12.
As it is shown on figure 3, the cutting belt 10 with membranaceous adhesive can also be only to attach at workpiece (semiconductor wafer 4 etc.)
It is formed in part with the composition of membranaceous adhesive 3.
Base material 11 is the material of the intensity parent becoming the cutting belt 10 with membranaceous adhesive, preferably has ultraviolet saturating
The material of penetrating property.As base material 11, such as, can enumerate Low Density Polyethylene, straight-chain polyethylene, medium density polyethylene, highly dense
Degree polyethylene, ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, HOPP, polybutene, poly-first
Polyolefin, vinyl-vinyl acetate copolymer, ionomer resin, ethylene-(methyl) acrylic copolymer, the second such as base amylene
Alkene-(methyl) acrylate (random, alternately) copolymer, ethylene-butene copolymer, ethylene-hexene co-polymers, polyurethane,
The polyester such as polyethylene terephthalate, PEN, Merlon, polyimides, polyether-ether-ketone, polyamides
Imines, Polyetherimide, polyamide, fully aromatic polyamide, polyphenylene sulfide, aromatic polyamides (paper), glass, glass cloth, fluorine
Resin, polrvinyl chloride, polyvinylidene chloride, cellulosic resin, silicones, metal (paper tinsel), paper etc..
For the surface of base material 11, in order to improve adaptation with adjacent layer, retentivity etc., it is possible to implement usual table
Face processes, and such as chromic acid process, ozone exposure, fire exposure, high-voltage electric shock exposure, ionizing ray process etc. are chemically or physically located
Reason, by silane coupling agent (adhesion substance the most described later) coating process.
The thickness of base material 11 can the most suitably determine, about generally 5~200 μm.
As binding agent used in the formation of adhesive phase 12, it is not particularly limited, such as, can use acrylic compounds
The pressure-sensitive adhesive that binding agent, rubber adhesive etc. are general.As pressure-sensitive adhesive, from the deterrent such as semiconductor wafer or glass
From the standpoint of the cleaning washing performance by the organic solvent such as ultra-pure water, alcohol of the electronic unit polluted etc., preferably with acrylic compounds
The acrylic adhesives of polymer based on polymer.
As acrylic polymer, such as can enumerate by (methyl) alkyl acrylate (such as methyl ester, ethyl ester, third
Ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2-Octyl Nitrite, different
Monooctyl ester, nonyl ester, ester in the last of the ten Heavenly stems, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, myristyl ester, cetyl ester,
The carbon number of the alkyl such as stearyl, eicosyl ester is 1~30, particularly carbon number be 4~18 straight-chain or
The Arrcostab etc. of branched) and the one kind or two or more work of (methyl) acrylate base ester (such as ring pentyl ester, cyclohexyl etc.)
The acrylic polymer etc. used for monomer component.And, so-called (methyl) acrylate, refer to acrylate and/or first
Base acrylate, the what is called (methyl) of the present invention is identical meaning entirely.
Acrylic polymer can also for the modified purpose such as cohesiveness, thermostability, contain as required with can
The unit corresponding with other monomer components of described (methyl) alkyl acrylate or cycloalkyl ester copolymerization.As such monomer
Composition, such as, can enumerate acrylic acid, methacrylic acid, (methyl) carboxy ethyl acrylate, (methyl) carboxypentyl acrylate, clothing health
The carboxyl group-containing monomers such as acid, maleic acid, fumaric acid .beta.-methylacrylic acid;The anhydride monomers such as maleic anhydride, itaconic anhydride;(methyl) acrylic acid
2-hydroxy methacrylate, (methyl) acrylic acid 2-hydroxy propyl ester, (methyl) acrylic acid 4-hydroxybutyl, (methyl) acrylic acid 6-hydroxyl
The own ester of base, (methyl) acrylic acid 8-hydroxyl monooctyl ester, (methyl) acrylic acid 10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) acrylic acid 12-hydroxyl
The hydroxyl monomers such as dodecyl ester, (methyl) acrylic acid (4-Hydroxymethyl-cyclo-hexyl) methyl ester;Styrene sulfonic acid, allyl sulphur
Acid, 2-(methyl) acrylamide-2-methylpro panesulfonic acid, (methyl) acryamidopropanesulfonic acid, (methyl) acrylic acid sulphur third
Ester, (methyl) propane sulfonic acid etc. are containing sulfonic group monomer;The phosphorous acid-based monomers such as acryloyl phosphoric acid 2-hydroxy methacrylate;
Acrylamide, acrylonitrile etc..These can be able to use one kind or two or more with the monomer component of copolymerization.These can be with the list of copolymerization
The usage amount of body is preferably below 40 weight % of whole monomer component.
Additionally, in order to make acrylic polymer cross-link, it is also possible to contain many as desired as comonomer composition
Functional monomer etc..As such multi-functional monomer, such as, can enumerate hexanediol two (methyl) acrylate, (gathering) second
Glycol two (methyl) acrylate, (gathering) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, season penta
Tetrol two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, two
Tetramethylolmethane six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, carbamate (first
Base) acrylate etc..These multi-functional monomers can also use one kind or two or more.Use for multi-functional monomer
Amount, from the standpoint of adhesion characteristic etc., below 30 weight % of whole monomer components.
Acrylic polymer can be by being polymerized single monomer or monomer mixture of more than two kinds and obtained.
Polymerization can be carried out to utilize the arbitrary mode such as polymerisation in solution, emulsion polymerization, polymerisation in bulk, suspension polymerisation.From preventing cleaning
The pollution of adherend etc. from the standpoint of, the content of low molecular weight substance is the smaller the better.Consider from this point, acrylic
The number-average molecular weight of thing is preferably more than 300,000, and more preferably 400,000~about 3,000,000.
It addition, in described binding agent, in order to based on improving, the number of the acrylic polymer etc. of polymer is divided equally
Son amount, it is also possible to suitably use external crosslinker.As the concrete method of outside cross-linking method, interpolation can be enumerated poly-different
The so-called cross-linking agent such as cyanate esters, epoxide, aziridine cpd, melamine class cross-linking agent also are allowed to react
Method.Using in the case of external crosslinker, its usage amount can according to the balance with the base polymer that should cross-link,
Suitably determine further according to the use as binding agent.It is said that in general, relative to described base polymer 100 weight
Part, preferably coordinate below about 5 weight portions, more preferably coordinate 0.1~5 weight portions.Additionally, in binding agent, as required, also
The additives such as existing known various viscosifier, age resister can be also used outside described composition.
Adhesive phase 12 can utilize ray curing binding agent to be formed.Ray curing binding agent can be because of ultraviolet
Make the degree of cross linking increase Deng the irradiation of ray, thus make its bonding force reduce easily.
By only part 12a attaching part corresponding with workpiece of the adhesive phase 12 shown in Fig. 2 being carried out roentgenization,
The difference of the bonding force of part 12b with other just can be set.In the case of Gai, uncured ray curing binding agent be formed
Described part 12b bond with membranaceous adhesive 3, it can be ensured that retentivity when cutting.
It addition, by making the adhesive phase 12 of ray curing solidify matchingly with the membranaceous adhesive 3 shown in Fig. 3, can
To form described part 12a that bonding force reduces significantly.In the case of Gai, can be by uncured ray curing binding agent
The described part 12b fixed wafer ring formed.
That is, ray curing binding agent is being utilized to be formed in the case of adhesive phase 12, preferably so that adhesive phase 12
The mode of the bonding force of bonding force other parts 12b of < of described part 12a carries out roentgenization to described part 12a.
Ray curing binding agent can use the official with ray-curables such as carbon-to-carbon double bonds without particular limitation
Can roll into a ball and demonstrate the material of cohesive.As ray curing binding agent, such as, can exemplify at described acrylic compounds
The contact adhesive that binding agent, rubber adhesive etc. are general has coordinated monomer component or the oligomer composition of ray-curable
The ray curing binding agent of addition type.
As the monomer component of ray-curable joined together, such as, can enumerate oligourethane, amino first
Acid esters (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate,
Tetramethylolmethane three (methyl) acrylate, tetramethylolmethane four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) third
Olefin(e) acid ester, dipentaerythritol six (methyl) acrylate, BDO two (methyl) acrylate etc..It addition, actinic radiation-curable
It is various that the oligomer composition of property can enumerate carbamates, polyethers, polyesters, polycarbonate-based, polybutadiene etc.
Oligomer, is suitably for the oligomer of the scope that its molecular weight is 100~about 30000.The monomer component or low of ray-curable
The use level of polymers composition can suitably be defined as reducing the bonding of adhesive phase according to the kind of described adhesive phase
The amount of power.It is said that in general, relative to constituting base polymer 100 weight portion such as acrylic polymer of binding agent, for example, 5
~500 weight portions, about preferably 40~150 weight portions.
It addition, as ray curing binding agent, except the described addition type illustrated ray curing binding agent with
Outward, it is also possible to based on enumerating, polymer employs in polymer lateral chain or main chain or main chain terminal has carbon-to-carbon pair
The ray curing binding agent of the inherent type of the polymer of key.The ray curing binding agent of inherent type need not containing as low
The oligomer composition etc. of molecular chaperones, or need not contain in a large number, elapse in time viscous thus without there being oligomer composition etc.
The situation of movement in mixture layer, can form the adhesive phase of the Rotating fields of stabilisation, the most preferably.
The described base polymer with carbon-to-carbon double bond can use without particular limitation have carbon-to-carbon double bond and
And there is the polymer of cohesive.As such base polymer, preferably using acrylic polymer as basic framework
Polymer.As the basic framework of acrylic polymer, the most illustrated acrylic polymer can be enumerated.
Carbon-to-carbon double bond introductory technique in described acrylic polymer is not particularly limited, and can use various side
Method, and it is easy in MOLECULE DESIGN that carbon-to-carbon double bond imports polymer lateral chain.Make that there is functional group in advance for example, it is possible to enumerate
Monomer and acrylic polymer copolymerization after, making to have while maintaining the ray-curable of carbon-to-carbon double bond can be with this
The method that the functional group of functional group reactions and the compound of carbon-to-carbon double bond carry out polycondensation or additive reaction.
As the example of the combination of these functional groups, carboxylic acid group and epoxy radicals, carboxylic acid group and '-aziridino, hydroxyl can be enumerated
Base and NCO etc..In the combination of these functional groups, consider from the easness of following response, be suitably for hydroxyl and isocyanide
The combination of perester radical.As long as it addition, by the acrylic compounds described in the combination producing of these functional groups with carbon-to-carbon double bond
The combination of polymer, then functional group be in acrylic polymer and described compound which side can, and described
Preferably in combination, be suitably for acrylic polymer and have hydroxyl, described compound has the situation of NCO.These feelings
Under condition, as having the isocyanate compound of carbon-to-carbon double bond, such as, can enumerate methacryloyl isocyanate, 2-
Methacryloxyethyl isocyanates, an isopropenyl-alpha, alpha-dimethylbenzyl isocyanates etc..It addition, as third
Olefin(e) acid base polymer, it is possible to use by hydroxyl monomer or 2-hydroxyethyl vinyl ether, the 4-hydroxybutyl of described illustration
Vinyl ethers, diethylene glycol monovinyl base ether the copolymerization such as ether compound obtained by polymer.
The ray curing binding agent of described inherent type has the basis of carbon-to-carbon double bond and gathers described in can being used alone
Compound (particularly acrylic polymer), but described ray-curable can also be coordinated with the degree not making characteristic deteriorate
Monomer component or oligomer composition.The oligomer composition etc. of ray-curable is commonly angled relative to base polymer 100 weight portion and is
In the range of 30 weight portions, the scope of preferably 0~10 weight portions.
In described ray curing binding agent, cause containing photopolymerization in the case of utilizing ultraviolet etc. to be allowed to solidification
Agent.As Photoepolymerizationinitiater initiater, such as can enumerate 4-(2-hydroxyl-oxethyl) phenyl (2-hydroxyl-2-propyl group) ketone,
The α-one such as Alpha-hydroxy-α, α '-dimethyl acetophenone, 2-methyl-2-hydroxypropiophenonepreparation, 1-hydroxycyclohexylphenylketone
Alcohol compound;Methoxyacetophenone, 2,2-dimethoxy-2-phenyl acetophenone, 2,2-diethoxy acetophenone, 2-
The acetophenone compounds such as methyl isophthalic acid-[4-(methyl mercapto)-phenyl]-2-morpholinopropane-1-ketone;Benzoin second
The benzoin ether compounds such as ether, benzoin iso-propylether, anisoin methyl ether;The ketal class chemical combination such as dibenzoyl dimethyl ketal
Thing;The aromatic sulfonyl compounds such as 2-naphthalene sulfonyl chloride;1-phenyl-1,1-propanedione-2-(O-ethoxy carbonyl)
The photolytic activity oxime compounds such as oxime;Benzophenone, benzoyl benzoic acid, 3,3 '-dimethyl-4-methoxy benzophenone
Deng benzophenone compound;Thiaxanthone, CTX, 2-methyl thiaxanthone, 2,4-dimethyl thioxanthone, isopropyl
Thiaxanthone, 2,4-bis-clopenthixal ketone, 2,4-diethyl thioxanthone, 2, the thiaxanthone compounds such as 4-diisopropylthioxanthone;
Camphorone;Halogenated ketone;Acylphosphine oxide;Acyl phosphonate etc..The use level of Photoepolymerizationinitiater initiater is relative to constituting binding agent
Base polymer 100 weight portion such as acrylic polymer, about for example, 0.05~20 weight portions.
It addition, as ray curing binding agent, such as can enumerate in Japanese Laid-Open Patent Publication 60-196956 publication public
The light such as addition polymerization compound that open, that contain the unsaturated bond with more than 2, the alkoxy silane with epoxy radicals gather
The conjunction property Photoepolymerizationinitiater initiater such as compound and carbonyl compound, organosulfur compound, peroxide, amine, salt compounds
Rubber adhesive or acrylic adhesives etc..
In the adhesive phase 12 of described ray curing, as required, it is also possible to containing colour because of roentgenization
Compound.By making in adhesive phase 12 containing the compound coloured because of roentgenization, the portion that can only will be irradiated
Divide coloring.The compound coloured because of roentgenization be before roentgenization for colourless or light color, become because of roentgenization having
The compound of color, such as, can enumerate leuco dye etc..The use ratio of the compound coloured because of roentgenization can be fitted
Local setting.
The thickness of adhesive phase 12 is not particularly limited, but from preventing the defect of chip section, keeping membranaceous gluing
From the standpoint of the fixing property taken into account of agent 3 etc., about preferably 1~50 μm.More preferably 2~30 μm, more preferably 5~
25μm。
Membranaceous adhesive 3 with the cutting belt 10 of membranaceous adhesive is preferably protected (not shown) by partition.Partition has
In the function as protection material protecting membranaceous adhesive 3 before reality application.Partition workpiece is fitted in membranaceous
Peeled time on adhesive 3.As partition, it is possible to use polyethylene terephthalate (PET), polyethylene, polypropylene,
Or utilize the remover such as fluorine class remover, chain alkyl esters of acrylic acid remover to carry out plastic foil or the paper of surface coating
Deng.
Cutting belt 10 with membranaceous adhesive can utilize usual way manufacture.Such as, by gluing cutting belt 1
Mixture layer 12 is fitted with membranaceous adhesive 3, can manufacture the cutting belt 10 with membranaceous adhesive.
Under conditions of exfoliation temperature 25 DEG C, peeling rate 300mm/min, peel angle 180 °, by membranaceous adhesive 3 from
Peeling force (peak load) when cutting belt 1 is peeled off is preferably more than 0.01N/20mm and below 3.00N/20mm.If being less than
0.01N/20mm, then likely produce chip during cutting and disperse.On the other hand, if more than 3.00N/20mm, then have pickup and become
Obtain difficult trend.
[manufacture method of semiconductor device]
The manufacture method of semiconductor device is illustrated.
As shown in Figure 4, the cutting belt 10 with membranaceous adhesive is crimped on semiconductor wafer 4.As semiconductor die
Sheet 4, can enumerate silicon wafer, silicon carbide wafer, compound semiconductor wafer etc..As compound semiconductor wafer, Ke Yiju
Go out gallium nitride wafer etc..
As compression bonding method, such as, can enumerate the method etc. that press tools such as utilizing crimping roller carries out pressing.
Crimping temperature (attaching temperature) is preferably more than 35 DEG C, more preferably more than 37 DEG C.Preferably crimp the upper limit of temperature
Low, preferably less than 50 DEG C, more preferably less than 45 DEG C.By crimping at low temperatures, it is possible to prevent semiconductor wafer 4
Heat affecting, such that it is able to suppression semiconductor wafer 4 warpage.
It addition, pressure is preferably 1 × 105Pa~1 × 107Pa, more preferably 2 × 105Pa~8 × 106Pa。
Then, as it is shown in figure 5, carry out the cutting of semiconductor wafer 4.That is, semiconductor wafer 4 is cut into given size
And singualtion, cut out semiconductor chip 5.Cutting can be carried out according to well-established law.It addition, in this operation, such as incision can be used
The cutting mode etc. being referred to as entirely cutting to the cutting belt 10 with membranaceous adhesive.As cutter sweep used in this operation
It is not particularly limited, it is possible to use existing known cutter sweep.Further, since semiconductor wafer 4 is by with membranaceous adhesive
Cutting belt 10 be adhesively fixed, chip defect or chip therefore can be suppressed to disperse, simultaneously can also suppress semiconductor wafer 4
Damaged.
In order to the semiconductor chip 5 being bonded and fixed in the cutting belt 10 with membranaceous adhesive is peeled off, partly lead
The pickup of body chip 5.Method as pickup is not particularly limited, and can use existing known various methods.For example, it is possible to
Enumerate with pin by each semiconductor chip 5 from membranaceous adhesive cutting belt 10 side jack-up, utilize pick device pick up quilt
The method etc. of the semiconductor chip 5 of jack-up.
Here, in the case of adhesive phase 12 is ultraviolet hardening, after to this adhesive phase 12 irradiation ultraviolet radiation
It is picked up.Thus, the bonding force of membranaceous adhesive 3 is reduced by adhesive phase 12, and the stripping of semiconductor chip 5 becomes easy.
As a result, it is possible to do not damage the pickup of semiconductor chip 5 ground.Exposure rate, the condition such as irradiation time when ultraviolet irradiates do not have
It is particularly limited to, as long as setting the most as required.
As shown in Figure 6, the semiconductor chip 5 picked up is pressed from both sides and is bonded and fixed on adherend 6 across membranaceous adhesive 3,
Obtain the adherend 61 with semiconductor chip.Adherend 61 with semiconductor chip possesses adherend 6, is configured at adherend
Membranaceous adhesive 3 on 6 and be configured at the semiconductor chip 5 on membranaceous adhesive 3.
Chip sticking temperature is preferably more than 80 DEG C, more preferably more than 90 DEG C.It addition, chip sticking temperature is preferably
Less than 150 DEG C, more preferably less than 130 DEG C.By being set to less than 150 DEG C, the generation of the warpage after being possible to prevent chip to paste.
It follows that make the heat cure of membranaceous adhesive 3 by heating under elevated pressure with the adherend 61 of semiconductor chip,
Make semiconductor chip 5 and adherend 6 set.By making the heat cure of membranaceous adhesive 3 under elevated pressure, can eliminate be present in membranaceous
Space between adhesive 3 and adherend 6, such that it is able to guarantee the area that membranaceous adhesive 3 contacts with adherend 6.
As carrying out the method that heats under elevated pressure, such as, can enumerate and will be configured in the chamber being filled with noble gas
With semiconductor chip adherend 61 heat method etc..
The pressure of pressured atmosphere is preferably 0.5kg/cm2(4.9×10-2MPa) more than, more preferably 1kg/cm2(9.8×
10-2MPa) more than, more preferably 5kg/cm2(4.9×10-1MPa) more than.If 0.5kg/cm2Above, then can hold
Elimination of changing places is present in the space between membranaceous adhesive 3 and adherend 6.The pressure of pressured atmosphere is preferably 20kg/cm2
(1.96MPa) below, more preferably 18kg/cm2(1.77MPa) below, more preferably 15kg/cm2(1.47MPa) below.
If 20kg/cm2Hereinafter, then oozing out of the membranaceous adhesive 3 caused by excessive pressurization can be suppressed.
Heating-up temperature when heating under elevated pressure is preferably more than 80 DEG C, more preferably more than 100 DEG C, the most excellent
Elect more than 120 DEG C as, particularly preferably more than 170 DEG C.If more than 80 DEG C, then membranaceous adhesive 3 can be made appropriateness
Hardness, it is possible to use cure under pressure makes space effectively disappear.Heating-up temperature is preferably less than 260 DEG C, more preferably 200 DEG C with
Under, more preferably less than 180 DEG C.If less than 260 DEG C, being then possible to prevent the decomposition of the membranaceous adhesive 3 before solidification.
Be preferably more than 0.1 hour heat time heating time, more preferably more than 0.2 hour, more preferably 0.5 hour with
On.If more than 0.1 hour, then the effect of pressurization can be obtained fully.It is preferably less than 24 hours heat time heating time, more preferably
It is less than 3 hours, more preferably less than 1 hour.
Then, carry out the front end of the portion of terminal (inner lead) of adherend 6 and the electrode pad on semiconductor chip 5
(not shown) utilizes the wire bond operation that bonding wire 7 electrically connects.As bonding wire 7, such as, can use gold thread, aluminum steel or copper cash etc..Enter
Temperature during row wire bond is preferably more than 80 DEG C, and more preferably more than 120 DEG C, this temperature is preferably less than 250 DEG C, more preferably
Less than 175 DEG C.It addition, its heat time heating time is several seconds~several minutes (such as 1 second~1 minute).Wiring is to be heated to be described temperature
Under state in the range of degree, can be carried out with crimping of pressurization by the vibrational energy being applied in combination ultrasound wave.
It follows that carry out the sealing process utilizing sealing resin 8 to be sealed by semiconductor chip 5.This operation is to protect
The semiconductor chip 5, the bonding wire 7 that are equipped on adherend 6 and carry out.This operation is the resin forming by sealing with mould
And carry out.As sealing resin 8, such as, use the resin of epoxies.Heating-up temperature during resin seal be preferably 165 DEG C with
On, more preferably more than 170 DEG C, this heating-up temperature is preferably less than 185 DEG C, more preferably less than 180 DEG C.
As required, it is also possible to sealer is heated further (rear curing process).Thus, so that it may so that in sealing process
The sealing resin 8 that solidification is not enough is fully cured.Heating-up temperature can suitably set.
As it has been described above, in embodiment 1, utilize to comprise to press from both sides to engage across membranaceous adhesive 3 chip on adherend 6 and partly lead
By membranaceous adhesive 3 is being added after the operation of body chip 5 and chip engages semiconductor chip 5 on adherend 6 operation
The method that pressure is heated and is allowed to the operation of heat cure, manufactures semiconductor device.
More specifically, the method for embodiment 1 comprises: at the membranaceous adhesive of the cutting belt 10 with membranaceous adhesive
On 3, the operation of configuring semiconductor wafer 4, cutting are configured at the semiconductor wafer 4 on membranaceous adhesive 3 and form semiconductor chip
The operation of 5, the operation that semiconductor chip 5 is picked up together with membranaceous adhesive 3, folder across membranaceous adhesive 3 on adherend 6
Chip engage the operation of semiconductor chip 5, on adherend 6 chip engage semiconductor chip 5 operation after by by membranaceous
Adhesive 3 heats under elevated pressure and is allowed to the operation of heat cure.
[embodiment]
Hereinafter, the present invention is described in detail to use embodiment, but the present invention is without departing from its purport, does not limits
Due to below example.
[making of the membranaceous adhesive of electric conductivity]
(embodiment 1~3)
According to the match ratio described in table 1, each composition described in table 1 and solvent (butanone) are added mixing and blending machine
In the stirred tank of (KEYENCE HM-500), with stir mode stirring, mixing 3 minutes.The varnish of gained is utilized die coating machine
After coating demoulding process film (MRA50 that Rhizoma Sparganii resin (strain) is made) above, being allowed to dry, the electric conductivity producing thick 30 μm is membranaceous
Adhesive.
And, noting at foot of the composition in table.
(acrylic resin)
The Teisan Resin SG-70L (propylene that Teisan Resin SG-70L:Nagase ChemteX (strain) makes
Acid resin, Mw:90 ten thousand)
(epoxy resin)
The EPICLON EXA-4850-150 that EPICLON EXA-4850-150:DIC (strain) makes (has bisphenol type bone
The epoxy resin of frame, epoxide equivalent 450)
The EPICLON HP-4032D that EPICLON HP-4032D:DIC (strain) makes (has the asphalt mixtures modified by epoxy resin of naphthalene type skeleton
Fat, epoxide equivalent 136~148)
EPPN-501HY: the EPPN-501HY of Japan's chemical medicine (strain) (has the epoxy resin of multifunctional type skeleton, epoxy
Equivalent 163~175)
(phenolic resin)
MEH-7851SS: the MEH-7851SS (phenolic resin, hydroxyl equivalent 201~205) that bright and chemical conversion (strain) is made
MEH-7851-4H: bright and chemical conversion (strain) make MEH-7851-4H (phenolic resin, hydroxyl equivalent 235~
245)
MEH-8000H: the MEH-8000H (phenolic resin, hydroxyl equivalent 139~143) that bright and chemical conversion (strain) is made
(thermal curing catalyst)
TPP-K: the TPP-K (catalyst of phosphorus system) of (strain) is learned in Xinghua, north
(electroconductive particle)
1200YP: the 1200YP (flake copper, mean diameter 3.5 μm, proportion 8.9) that Mitsui Metal Co., Ltd.'s mining industry (strain) is made
EHD: the EHD (argentum powder, mean diameter 0.7 μm, proportion 10.5) that Mitsui Metal Co., Ltd.'s mining industry (strain) is made
[evaluation]
Membranaceous adhesive to gained, has carried out following each evaluation.The results are shown in Table 1.
[migration test]
The migration test device 100 shown in Fig. 8 is used to carry out migration test.First, glass epoxy substrate has been prepared
101.Then, on glass epoxy substrate 101, separate interval laminating 2 wide 1mm, long 50mm, the conductions of thick 30 μm of 0.5mm
The membranaceous adhesive 3 of property.Thereafter, 2 membranaceous adhesive of electric conductivity 3 are heated 1 hour at 140 DEG C, then heat 2 hours at 200 DEG C,
Thus it is allowed to heat cure.Galvanometric DC source electricity is possessed it follows that connect between the end of the membranaceous adhesive of electric conductivity 3
Road.After dripping the deionized water 102 (0.1 μ S/cm) of 3 μ L in the way of being full of between by membranaceous for electric conductivity adhesive 3, switch on power
(voltage 2V), observes galvanometric change.In the case of producing migration, reach the conducting between the membranaceous adhesive of electric conductivity 3, electricity
The current value of flowmeter raises sharp.Will turn on moment of power supply when being set to on-test, it will be observed that current value drastically
When the moment raised is set to migrate generation, by on-test to migrating the situation evaluation that time course is more than 500 seconds occurred
For "○", the situation less than 500 seconds is evaluated as "×".
[amount of chloride ions mensuration]
It is allowed to heat cure at the membranaceous adhesive of electric conductivity 1 hour made by 175 DEG C of heating.The membranaceous glue that will have cured
Pure water 50mL airtight put into by stick, extracts chloride ion at 121 DEG C with 20 hours.Utilize the chromatography of ions of following condition
(DIONEX company ICS-3000) measures extracting solution, carries out chlorine dose analysis, the situation that amount of chloride ions is below 20ppm is commented
Valency is "○", and the situation that will be greater than 20ppm is evaluated as "×".
(condition determination)
Condition: anion
Detached dowel: Ion Pac AS18 (4mm × 250mm)
Guard column: Ion Pac AG18 (4mm × 50mm)
Removing system: ASRS-300 (external water mode)
Detector: conductivity detector
Eluent: KOH aqueous solution (uses eluent maker EG40)
Eluent flow: 1.0mL/min
[table 1]
It is all good result that the migration test of the membranaceous adhesive of electric conductivity of embodiment and amount of chloride ions measure, it is known that profit
The semiconductor device of high reliability can be manufactured with the membranaceous adhesive of this electric conductivity.
The explanation of symbol
10 with the cutting belt of membranaceous adhesive,
1 cutting belt,
11 base materials,
12 adhesive phases,
3 membranaceous adhesive,
4 semiconductor wafers,
5 semiconductor chips,
6 adherends,
61 with the adherend of semiconductor chip,
7 bonding wires,
8 sealing resins
Claims (10)
1. the membranaceous adhesive of electric conductivity, it contains electroconductive particle,
Migration test based on deionized water drop purgation is more than 500 seconds from the time starting to be tested to migrate.
The membranaceous adhesive of electric conductivity the most according to claim 1, wherein,
The concentration of chloride ion is below 20ppm.
The membranaceous adhesive of electric conductivity the most according to claim 1 and 2, it utilizes wet coating method to be formed.
4. according to the membranaceous tacky film of the electric conductivity according to any one of claims 1 to 3, its thickness be more than 5 μm and 100 μm with
Under.
5. according to the membranaceous adhesive of the electric conductivity according to any one of Claims 1 to 4, wherein,
Described electroconductive particle contains sheets of conductive particle,
The amount of the described sheets of conductive particle for the total amount of described electroconductive particle be more than 5 weight % and
Below 100 weight %.
6. according to the membranaceous adhesive of the electric conductivity according to any one of Claims 1 to 4, wherein,
Described electroconductive particle contains spherical electroconductive particle,
In the particle size distribution of described spherical electroconductive particle, the particle size range of 0.2 μm~0.8 μm exists 1 peak value grain
, in the particle size range of 3 μm~15 μm, there is 1 peak diameter B in footpath A,
The ratio of described peak diameter B and described peak diameter A is 5~15.
7. according to the membranaceous adhesive of electric conductivity according to any one of claim 1~6, wherein,
The content of the described electroconductive particle in the membranaceous adhesive of described electric conductivity is below more than 30 weight % and 95 weight %.
8. according to the membranaceous adhesive of electric conductivity according to any one of claim 1~7, wherein,
Possibly together with curable resin.
9., with a cutting belt for membranaceous adhesive, it possesses:
Possess base material and the cutting belt of adhesive phase being configured on this base material and
The membranaceous adhesive of electric conductivity according to any one of claim 1~8 being configured on described adhesive phase.
Cutting belt with membranaceous adhesive the most according to claim 9, wherein,
By membranaceous for described electric conductivity adhesive and described cutting belt with the peeling rate of 300mm/min, the exfoliation temperature of 25 DEG C,
The peeling force when peel angle of 180 ° is peeled off is more than 0.01N/20mm and below 3.00N/20mm.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014001537A JP2015129227A (en) | 2014-01-08 | 2014-01-08 | Conductive film-like adhesive and dicing tape with film-like adhesive |
JP2014-001537 | 2014-01-08 | ||
PCT/JP2014/083936 WO2015104988A1 (en) | 2014-01-08 | 2014-12-22 | Conductive film-like adhesive and dicing tape with film-like adhesive |
Publications (1)
Publication Number | Publication Date |
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CN105874022A true CN105874022A (en) | 2016-08-17 |
Family
ID=53523825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480072317.4A Pending CN105874022A (en) | 2014-01-08 | 2014-12-22 | Conductive film-like adhesive and dicing tape with film-like adhesive |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2015129227A (en) |
KR (1) | KR20160106624A (en) |
CN (1) | CN105874022A (en) |
TW (1) | TW201533215A (en) |
WO (1) | WO2015104988A1 (en) |
Families Citing this family (4)
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JP6982950B2 (en) * | 2016-03-31 | 2021-12-17 | 大日本印刷株式会社 | Conductive members and laminates |
JP6798646B2 (en) * | 2018-06-12 | 2020-12-09 | Dic株式会社 | Conductive adhesive sheet |
JP7210421B2 (en) * | 2019-11-08 | 2023-01-23 | 日東電工株式会社 | Thermosetting sheet and dicing die bond film |
JP7190418B2 (en) * | 2019-11-08 | 2022-12-15 | 日東電工株式会社 | Thermosetting sheet and dicing die bond film |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3288146B2 (en) | 1992-09-16 | 2002-06-04 | 日立化成工業株式会社 | Conductive adhesive film, bonding method, support member with conductive adhesive film, and semiconductor device |
JP3885896B2 (en) * | 1996-04-15 | 2007-02-28 | 日立化成工業株式会社 | Repairable electrode connecting adhesive composition and electrode connecting connecting member comprising the composition |
JP4797224B2 (en) * | 2000-04-25 | 2011-10-19 | 日立化成工業株式会社 | Adhesive composition, adhesive composition for circuit connection, connector and semiconductor device |
JP4401294B2 (en) * | 2002-09-04 | 2010-01-20 | ナミックス株式会社 | Conductive adhesive and circuit using the same |
JP4137827B2 (en) * | 2004-03-23 | 2008-08-20 | 住友ベークライト株式会社 | Conductive adhesive film and semiconductor device using the same |
JP2012092247A (en) * | 2010-10-28 | 2012-05-17 | Showa Denko Kk | Liquid-form curable composition |
JP2012142368A (en) * | 2010-12-28 | 2012-07-26 | Nitto Denko Corp | Dicing die bond film and semiconductor device |
JP2013093491A (en) * | 2011-10-27 | 2013-05-16 | Toshiba Corp | Semiconductor device and manufacturing method of the same |
-
2014
- 2014-01-08 JP JP2014001537A patent/JP2015129227A/en active Pending
- 2014-12-22 KR KR1020167020467A patent/KR20160106624A/en not_active Application Discontinuation
- 2014-12-22 WO PCT/JP2014/083936 patent/WO2015104988A1/en active Application Filing
- 2014-12-22 CN CN201480072317.4A patent/CN105874022A/en active Pending
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2015
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Also Published As
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WO2015104988A1 (en) | 2015-07-16 |
KR20160106624A (en) | 2016-09-12 |
JP2015129227A (en) | 2015-07-16 |
TW201533215A (en) | 2015-09-01 |
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