CN105845808A - 一种led封装基板的制备方法 - Google Patents
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Abstract
本发明公开了一种LED封装基板的制备方法。该LED封装基板包括：用于保护并承载LED芯片的封装基板；位于所述封装基板之上的反射层；位于所述反射层上的光转换层；位于所述光转换层上的无封装基板的LED芯片，其可双向发射特定波长的光；本发明所揭示的封装基板的特征在于，其包含光转换层，简化了封装的工艺。同时其制备工艺有利于大批量制备含均一荧光粉的封装基板，提升产品的良率和产率。
Description
技术领域
本发明涉及基于发光二极管的封装基板及其制备方法，特别是涉及含光转换材料的封装基板。
背景技术
固体照明，特别是发光二极管(LED)由于其寿命长、无污染、光效高正越来越多地取代荧光灯/白炽灯等成为新一代的光源。由于直接生产制备出来的LED都是单色光，要获得白光，必须有多种颜色混合才能形成。最常用的制备白光LED的方式是利用蓝/紫外光LED激发光转换材料，由LED自身发出的光和经光转换层转换的互补光共同形成白光。
现有LED封装体的制备流程为：提供一LED封装基板，将LED芯片固晶在封装基板上，打线后再在芯片上涂覆荧光粉，然后烘烤成型。从LED芯片发出的蓝光经过荧光粉层后，部分被荧光粉吸收后转换成黄光，与蓝光混合后形成白光。
封装制程最关键的步骤在于涂覆荧光粉，而现有技术——不管是点胶还是喷粉，都有其不可克服的缺点。点胶方式是用点胶机在预先固好LED芯片的封装基板上分别点上配好的荧光胶。由于点胶机机台的波动(压力、电压等)，造成每颗LED芯片上所点的胶不尽相同。同时，由于荧光粉的沉降，造成每颗LED芯片上所含荧光粉的浓度也不尽相同。这两点最终造成同批制造出来的白光LED芯片的色点差异，产生不良。另外，点胶机点胶的速度较慢，在大批量制造时产能受限。喷粉涂覆荧光粉的方式虽然在色点均一性方面有所改善，但由于每次喷粉的面积很大，待喷样品的边缘会造成很大的浪费。同时，喷粉设备昂贵，摊提到每颗封装体的成本变高。
发明内容
本发明的目的在于简化LED封装流程，改善现有荧光粉涂覆方式的缺点，主要通过在制备封装基板时把荧光粉制备到基板上，使得封装只需完成固晶、打线制程。
为达到这一目的，本发明提供一基座，其用于承载封装基板的其余部分；在所述基座上的沉积反射层，用于反射LED芯片发出的及被荧光粉吸收后发射的光；在所述反射层上制备的光转换层，其用于吸收LED芯片朝封装基板发出的蓝光并转换成黄光。如此芯片朝上发出的蓝光和经反射层反射的黄光一起混合成白光。
在一种实施方式中，所述基座为陶瓷基座，在其上预先布置好电路，用于后续使用时与LED芯片导通；然后在所述陶瓷基座表面镀反光材料用作反射层。其中，在所述基座电路上镀导电材料，如银等。在其余部位镀绝缘材料，如DBR等；最后，将陶瓷荧光粉片对准贴合到陶瓷基座上，在500℃-1000℃下烧结成型；其中，所述陶瓷荧光粉片预先钻好通孔，并在通孔内填入导电材料。
在一种实施方式中，先提供一陶瓷荧光粉片，在其上钻好通孔，并在通孔内填入导电材料；在所述陶瓷荧光粉片背面用绝缘材料制作隔断栏，分隔正负电极通孔；在所述陶瓷荧光粉片背面镀导电反光材料用作反射层，如银等；在所述陶瓷荧光粉片背面的反光层下镀一层厚的(超过100微米)导电层，用于保护支撑荧光粉片和反射层，起到基座的作用。本制作方法的特征在于，所述导电反光层和厚的导电层皆以所述的隔断栏在正负电极通孔间隔开。
在一种实施方式中，提供一基座，其上预先布置好凹槽、电路和焊接凸点。凹槽用于放置荧光粉层；电路和焊接凸点用于与LED芯片形成电连接；在所述基座表面镀反光材料用作反射层。在所述基座电路上镀导电材料，如银等。在其余部位镀绝缘材料，如DBR等；将在所述基座表面涂覆配好的荧光胶，在100℃-500℃烘烤成型；研磨/切削平坦化荧光胶表面，露出焊接凸点。
虽然在下文中将结合一些示例性实施及使用方法来描述本发明，但本领域技术人员应当理解，并不旨在将本发明限制于这些实施例。反之，旨在覆盖包含在所附的权利要求书所定义的本发明的精神与范围内的所有替代品、修正及等效物。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例一起用于解释本发明，并不构成对本发明的限制。此外，附图数据是描述概要，不是按比例绘制。
图1为实施例1的截面示意图。
图2为实施例1的制备流程图。
图3为实施例2的截面示意图。
图4为实施例2的制备流程图。
图5为实施例3的截面示意图。
图6为实施例3的制备流程图。
图中各标号表示：
101 陶瓷基座
102 陶瓷本体
103 陶瓷基座下电路
104 陶瓷基座上电路
105 陶瓷基座内部通孔导电柱
106 绝缘块
107、207 Ag反射层
108、208 DBR反射层
109、209 陶瓷荧光粉片
110、210 陶瓷荧光粉片内部的通孔导电柱
212 导电基座
301 基座
302 绝缘的基座本体
303 电路
304 焊接凸点
305 白色反光漆
306 荧光胶
307 凹槽
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
实施例1：
制备并切割好的实施例1的单一封装基板截面示意图如图1所示。其制备流程如图2所示，首先提供一预先制备好的陶瓷基座101。所述陶瓷基座包含陶瓷本体102、下表面电路103、上表面电路104、连通上下表面电路的陶瓷基座内部的通孔导电柱105，其中同一表面的电路以绝缘块106隔开；陶瓷基座材质可以是氧化铝、氮化铝等，优选的，以氧化铝为基座。上下表面及通孔导电柱的材质可以是铜银金中的一种或合金，优选的，以铜为导电材质。绝缘块106所用材质是氧化铝。
然后在所述陶瓷基座上表面镀上反射层，在所述上表面电路104上镀导电反射材料，优选的，镀银107；在所述绝缘块106上镀绝缘材料，优选的，镀DBR。其实施方式S11可以是：1)先整面镀上DBR；2)在DBR上用光刻胶开出图形，绝缘块上部用光刻胶阻挡，电路位置暴露出来；3)蚀刻露出的DBR层；4)沉积Ag层。5)去除光刻胶。所述DBR材质为氧化硅和氧化钛的组合。
最后，如S12所示，提供一预先制备好的陶瓷荧光粉片109，其内部含通孔导电柱110。将所述陶瓷荧光粉片109对准贴合到陶瓷基座101上，在500℃-1000℃下烧结成型，优选的，在850℃烧结。
本发明所述封装基板由基座和陶瓷荧光粉片一体成型，各部位结合好，结构强度更高，导电和导热性能更优。同时，本发明的荧光粉涂覆方式不需分别在不同封装支架上进行涂覆，降低了传统点胶方式色点差异大的问题，更适合大批量制作生产。最后，LED背向发出的蓝光在荧光粉片内的行程是其厚度的两倍。因此，可以用更薄的荧光粉转换出更多的黄光。
实施例2：
制备并切割好的实施例2的单一封装基板截面示意图如图3所示。其制备流程如图4所示，提供一预先制备好的陶瓷荧光粉片209，其内部含通孔导电柱210。
然后，如S21所示，在所述陶瓷荧光粉片209背面用绝缘材料制作隔断栏208，分隔正负电极通孔。优选的，我们在此选择镀绝缘的DBR，如氧化硅和氧化钛的组合。其实施方式为：1)先整面镀上DBR；2)在DBR上用光刻胶开出图形，需要绝缘的区域用光刻胶阻挡，需导电的位置暴露出来；3)蚀刻露出的DBR层；
然后，如S22所示，在保留S21步骤中光刻胶的条件下，进一步在陶瓷荧光粉片的背面沉积Ag层作为反射层。
最后，如S23所示，在保留S21步骤中光刻胶的条件下，进一步在陶瓷荧光粉片的背面沉积一层厚的(超过100微米)导电层，用于保护支撑荧光粉片和反射层，起到基座的作用。导电层的材料是铜银金或其合金。优选的，导电层与Ag反光层的总厚度要大于DBR层的厚度。
本实施例是实施例1的精简版，由于节省了陶瓷基座，在成本上更有优势。
实施例3：
制备并切割好的实施例3的单一封装基板截面示意图如图5所示。其制备流程如图6所示，提供一基座301，其上预先布置好凹槽307、电路303和焊接凸点304。优选的，基座的材质选用工程塑料，如PPA，EMC等；电路和焊接凸点选用铜。
然后，如S31所示，在所述基座301表面选择性涂覆反光漆用作反射层。所述反光漆涂在除焊接凸点的基座表面。
然后，如S32所示，在所述基座301表面涂覆配好的荧光胶306，于烤箱中150℃烘烤四个小时成型。
最后，研磨/切削平坦化荧光胶表面，露出焊接凸点。
Claims (1)
1.一种LED封装基板的制备方法，其特征在于：
1)提供一陶瓷荧光粉片：在其上钻好通孔，并在通孔内填入导电材料。所述导电材料是铜、银、金中的一种或其组合；
2)在所述陶瓷荧光粉片背面用绝缘材料制作隔断栏，分隔正负电极通孔；
3)在所述陶瓷荧光粉片背面镀导电反光材料用作反射层，如银等；
4)在所述陶瓷荧光粉片背面的反光层下镀一层厚的(超过100微米)导电层，用于保护支撑荧光粉片和反射层，起到基座的作用；其特征在于，所述导电反光层和厚的导电层皆以所述的隔断栏在正负电极通孔间隔开。
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| PCT/CN2016/094071 WO2017206332A1 (zh) | 2016-06-02 | 2016-08-09 | 一种led封装基板的制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017025013A1 (zh) * | 2015-08-11 | 2017-02-16 | 深圳朝伟达科技有限公司 | 一种led封装基板 |
| WO2019072761A1 (de) * | 2017-10-09 | 2019-04-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauteil und herstellungsverfahren für ein optoelektronisches halbleiterbauteil |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091875A (zh) * | 2014-07-04 | 2014-10-08 | 厦门市三安光电科技有限公司 | 一种led封装结构 |
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| CN106025038A (zh) * | 2016-06-02 | 2016-10-12 | 深圳朝伟达科技有限公司 | 一种led封装基板的制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104091875A (zh) * | 2014-07-04 | 2014-10-08 | 厦门市三安光电科技有限公司 | 一种led封装结构 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017025013A1 (zh) * | 2015-08-11 | 2017-02-16 | 深圳朝伟达科技有限公司 | 一种led封装基板 |
| WO2019072761A1 (de) * | 2017-10-09 | 2019-04-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauteil und herstellungsverfahren für ein optoelektronisches halbleiterbauteil |
| US11316075B2 (en) | 2017-10-09 | 2022-04-26 | Osram Oled Gmbh | Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component |
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