CN105826482B - Green light quantum point membrane electro luminescent device and preparation method thereof - Google Patents
Green light quantum point membrane electro luminescent device and preparation method thereof Download PDFInfo
- Publication number
- CN105826482B CN105826482B CN201610213168.XA CN201610213168A CN105826482B CN 105826482 B CN105826482 B CN 105826482B CN 201610213168 A CN201610213168 A CN 201610213168A CN 105826482 B CN105826482 B CN 105826482B
- Authority
- CN
- China
- Prior art keywords
- green light
- layer
- light quantum
- quantum point
- green
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of green light quantum point membrane electro luminescent device and preparation method thereof, including substrate, anode, hole injection layer, hole transmission layer, green light quantum point luminescent layer, green energy transfer layer, electron transfer layer, electron injecting layer and the negative electrode stacked gradually；The thickness of the green light quantum point luminescent layer is 8nm~15nm；The thickness of the green energy transfer layer is 0.2nm~2nm.This green light quantum point membrane electro luminescent device, green light quantum point luminescent layer of the thickness for 8nm~15nm is used first, so that green light quantum point luminescent layer forms incomplete continuous film, so that hole can partially pass through green light quantum point luminescent layer without excessively being accumulated in green light quantum point luminescent layer and hole transport bed boundary, being reached again by way of energy transmission after formation exciton on green energy transfer layer makes it luminous on green light quantum point luminescent layer, solve the problems, such as that the hole injection barrier of green light quantum point membrane electro luminescent device is higher.
Description
Technical field
The present invention relates to membrane electro luminescent device field, more particularly to a kind of green light quantum point TFEL device
Part and preparation method thereof.
Background technology
Quantum dot (quantumdots, QDs) is made up of a limited number of atom, and three dimensions are in nanometer number
Magnitude.Quantum dot is generally spherical or spherical, is (generally by the element A group of the A or III A of II B~VI~V by semi-conducting material
Into) made of, stable diameter 2~20nm nano-particle.Quantum dot is the set of the atom and molecule on nanoscale
Body, can be both made up of a kind of semi-conducting material, such as by IIB.VIA races element (such as CdS, CdSe, CdTe, ZnSe) or
IIIA.VA races element (such as InP, InAs) forms, and can also be made up of two or more semi-conducting material.As one
The novel semiconductor nano material of kind, quantum dot has many unique nanometer properties, and can apply electroluminescent as film
The luminescent layer of luminescent device.
However, because the transparent anode ITO work functions that membrane electro luminescent device is commonly used are 4.8eV, its HOMO with QDs
Energy level (>6.0eV) difference farther out, therefore causes the hole injection barrier in QLED devices universal higher, it is necessary to high HOMO energy levels
Hole-injecting material helps the injection in hole, but currently conventional its HOMO energy level of hole-injecting material is generally 5.2eV
~6.0eV, can meet substantially for feux rouges QDs (~6.0eV) hole injection requirement, but for green glow QDs (~
6.5eV) and for blue light QDs (~6.8eV), because hole injection barrier is higher, it is difficult to meet the requirement of hole injection.
The content of the invention
Based on this, it is necessary to provide a kind of green light quantum point thin-film electro that can solve the problem that the problem of hole injection barrier is higher
Electroluminescence device and preparation method thereof.
A kind of green light quantum point membrane electro luminescent device, including stack gradually substrate, anode, hole injection layer, sky
Cave transport layer, green light quantum point luminescent layer, green energy transfer layer, electron transfer layer, electron injecting layer and negative electrode；
The material of the green light quantum point luminescent layer is green light quantum point, and the thickness of the green light quantum point luminescent layer is
8nm~15nm；
The material of the green energy transfer layer is green organic luminescence, and the thickness of the green energy transfer layer is
0.2nm~2nm.
In one embodiment, the green light quantum point be core shell structure CdSe@ZnS green light quantum points, the nucleocapsid
The particle diameter of the CdSe@ZnS green light quantum points of structure is 6nm~15nm, wherein, " CdSe@ZnS " are that ZnS coats CdSe.
In one embodiment, the green organic luminescence be selected from three (8-hydroxyquinoline) aluminium, 2,3,6,7- tetrahydrochysenes-
1,1,7,7- tetramethyls -1H, 5H, 11H-10- (2-[4-morpholinodithio base)-quinolizino [9,9A, 1GH] cumarin and three (2- phenyl
Pyridine) close at least one of iridium.
In one embodiment, the material of the anode is ITO, FTO, AZO or IZO, and the thickness of the anode is 80nm
~200nm.
In one embodiment, the material of the hole injection layer is poly- 3,4- dioxyethylene thiophenes and polyphenyl sulfonate
Mixture, the thickness of the hole injection layer is 20nm~40nm.
In one embodiment, the material of the hole transmission layer is selected from poly- (double (4- butyl phenyls)-N, N'- couples of N, N'-
(phenyl) benzidine) and poly- ((9,9- dioctyl fluorene -2,7- diyls)-altogether (4,4'- (N- (4- sec-butyls phenyl) diphenylamines))
At least one of, the thickness of the hole transmission layer is 20nm~40nm.
In one embodiment, the material of the electron transfer layer be selected from N- aryl benzimidazole, diphenyl o-phenanthroline,
At least one of zinc oxide and titanium dioxide, the thickness of the electron transfer layer is 30nm~60nm.
In one embodiment, the material of the electron injecting layer is selected from lithium fluoride, lithium carbonate, cesium carbonate, nitridation caesium, chlorine
Change at least one of caesium and cesium fluoride, the thickness of the electron injecting layer is 0.5nm~5nm.
In one embodiment, the material of the negative electrode is aluminium, silver, magnesium, barium or calcium, the thickness of the negative electrode for 80nm~
150nm。
The preparation method of above-mentioned green light quantum point membrane electro luminescent device, comprises the following steps：
Substrate is provided and the substrate is cleaned；
Anode is formed in the substrate cleaned up；
Hole injection layer, hole transmission layer and green light quantum point are sequentially formed on the anode by solution spin-coating method to send out
Photosphere, wherein, the material of the green light quantum point luminescent layer is green light quantum point, and the thickness of the green light quantum point luminescent layer is
8nm~15nm；And
Green energy transfer layer, electric transmission are sequentially formed by vacuum vapour deposition on the green light quantum point luminescent layer
Layer, electron injecting layer and negative electrode, wherein, the material of the green energy transfer layer is green organic luminescence, the green glow
The thickness of energy transmission layer is 0.2nm~2nm.
This green light quantum point membrane electro luminescent device, thickness is used to be sent out for 8nm~15nm green light quantum point first
Photosphere, so that green light quantum point luminescent layer forms incomplete continuous film so that hole can partially pass through green light quantum point
Luminescent layer without excessively being accumulated in green light quantum point luminescent layer and hole transport bed boundary, then green light quantum point luminescent layer with
The HOMO energy levels green energy transfer layer relatively low with respect to the HOMO energy levels of green light quantum point luminescent layer is inserted between electron transfer layer,
Hole can partially pass through the arrival of green light quantum point luminescent layer after hole injection layer, hole transmission layer after being injected by anode green
The position of light energy transfer layer simultaneously forms exciton, is then reached again by the mode of energy transmission (ET, Energy Transfer)
Make it luminous on green light quantum point luminescent layer, the green energy transfer layer is located at green light quantum point luminescent layer and electric transmission simultaneously
The interface of layer, the thickness of green energy transfer layer is 0.2nm~2nm, so that green energy transfer layer can not form itself
Strong luminescence, do not influence the luminescent spectrum and its excitation of green light quantum point membrane electro luminescent device, solve green quantum
The problem of hole injection barrier of point membrane electro luminescent device is higher.
Brief description of the drawings
Fig. 1 is the structural representation of the green light quantum point membrane electro luminescent device of an embodiment；
Fig. 2 is the flow chart of the preparation method of green light quantum point membrane electro luminescent device as shown in Figure 1；
Fig. 3 is that the luminescent properties of green light quantum point membrane electro luminescent device made from 1~embodiment of embodiment 4 contrast
Figure.
Embodiment
The preparation method of green light quantum point membrane electro luminescent device is made mainly in combination with drawings and the specific embodiments below
Further details of explanation.
The green light quantum point membrane electro luminescent device of an embodiment as shown in Figure 1, including the substrate stacked gradually
10th, anode 20, hole injection layer 30, hole transmission layer 40, green light quantum point luminescent layer 50, green energy transfer layer 60, electronics
Transport layer 70, electron injecting layer 80 and negative electrode 90.
Substrate 10 generally selects the higher glass of transmitance.
The material of anode 20 is indium tin oxide (ITO), fluorine doped tin oxide (FTO), the zinc oxide (AZO) or indium-doped for mixing aluminium
Zinc oxide (IZO).
The thickness of anode 20 is 80nm~200nm.
The material of hole injection layer 30 is the mixing of poly- 3,4- dioxyethylene thiophenes (PEDOT) and polyphenyl sulfonate (PSS)
Thing.Preferably, the material of hole injection layer 30 is that mass ratio is 3：1 poly- 3,4- dioxyethylene thiophenes (PEDOT) and polyphenyl sulphur
The mixture of hydrochlorate (PSS).
The thickness of hole injection layer 30 is 20nm~40nm.
The material of hole transmission layer 40 is selected from poly- (double (phenyl) benzidine of double (4- the butyl phenyls)-N, N'- of N, N'-)
(Poly-TPD) and it is poly- ((9,9- dioctyl fluorene -2,7- diyls)-altogether (4,4'- (N- (4- sec-butyls phenyl) diphenylamines))
At least one of (TFB).
The thickness of hole transmission layer 40 is 20nm~40nm.
The material of green light quantum point luminescent layer 50 is green light quantum point.Preferably, green light quantum point is core shell structure
CdSe@ZnS green light quantum points, the particle diameter of the CdSe@ZnS green light quantum points of core shell structure is 6nm~15nm, wherein, " CdSe@
ZnS " is that ZnS coats CdSe.The CdSe@ZnS green light quantum points of core shell structure can be directly commercially available.
Preferably, the particle diameter of the CdSe@ZnS green light quantum points of core shell structure is 12.5nm.
The thickness of green light quantum point luminescent layer 50 is 8nm~15nm, so that green light quantum point luminescent layer 50 is endless
Total continuity film so that hole can partially pass through green light quantum point luminescent layer 50 without in green light quantum point luminescent layer 50 and hole
The interface of transport layer 40 excessively accumulates.
The material of green energy transfer layer 60 is green organic luminescence.Specifically, green organic luminescence is selected from
Three (8-hydroxyquinoline) aluminium (Alq3), 2,3,6,7- tetrahydrochysene -1,1,7,7- tetramethyls -1H, 5H, 11H-10- (2-[4-morpholinodithios
Base)-quinolizino [9,9A, 1GH] cumarin (C545) and three (2- phenylpyridines) close iridium (III) (Ir (ppy)3) at least one
Kind.
The thickness of green energy transfer layer 60 is 0.2nm~2nm, so that green energy transfer layer 60 can not be formed certainly
The strong luminescence of body, the luminescent spectrum and excitation of green light quantum point luminescent layer 50 are not influenceed.
The material of electron transfer layer 70 is selected from N- aryl benzimidazole (TPBi), diphenyl o-phenanthroline (Bphen), oxidation
Zinc (ZnO) and titanium dioxide (TiO2At least one of).
The thickness of electron transfer layer 70 is 30nm~60nm.
The material of electron injecting layer 80 is selected from lithium fluoride (LiF), lithium carbonate (Li2CO3), cesium carbonate (Cs2CO3), nitridation caesium
(CsN3), at least one of cesium chloride (CsCl) and cesium fluoride (CsF).
The thickness of electron injecting layer 80 is 0.5nm~5nm.
The material of negative electrode 90 is aluminium (Al), silver-colored (Ag), magnesium (Mg), barium (Ba) or calcium (Ca).
The thickness of negative electrode 90 is 80nm~150nm.
This green light quantum point membrane electro luminescent device, thickness is used to be sent out for 8nm~15nm green light quantum point first
Photosphere 50, so that green light quantum point luminescent layer 50 forms incomplete continuous film so that hole can partially pass through green glow amount
Son point luminescent layer 50 in green light quantum point luminescent layer 50 with the interface of hole transmission layer 40 without excessively accumulating, then in green quantum
The HOMO energy levels that the relative green light quantum point luminescent layer 50 of HOMO energy levels is inserted between point luminescent layer 50 and electron transfer layer 70 are relatively low
Green energy transfer layer 60, hole injected by anode 20 after by hole injection layer 30, can part after hole transmission layer 40
The position of green energy transfer layer 60 is reached through green light quantum point luminescent layer 50 and forms exciton, then passes through energy transmission
The mode of (ET, Energy Transfer) reaches again makes it luminous on green light quantum point luminescent layer 50, the green energy transfer layer
60 are simultaneously positioned at the interface of green light quantum point luminescent layer 50 and electron transfer layer 70, the thickness of green energy transfer layer 60
0.2nm~2nm, so that green energy transfer layer 60 can not form the strong luminescence of itself, it is thin that green light quantum point is not influenceed
The luminescent spectrum and its excitation of film electroluminescent device, solves the hole injection gesture of green light quantum point membrane electro luminescent device
Build the problem of higher.
The preparation method of above-mentioned green light quantum point membrane electro luminescent device as shown in Figure 2, comprises the following steps：
S10, substrate 10 is provided and substrate 10 is cleaned.
Substrate 10 generally selects the higher glass of transmitance.
The operation cleaned to substrate 10 is：Detergent, acetone, ethanol and each ultrasound of isopropanol are used successively to substrate 10
Handle 15min.
S20, anode 20 is formed in the substrate 10 cleaned up that S10 is obtained.
The material of anode 20 is indium tin oxide (ITO), fluorine doped tin oxide (FTO), the zinc oxide (AZO) or indium-doped for mixing aluminium
Zinc oxide (IZO).
The thickness of anode 20 is 80nm~200nm.
Formed in the substrate cleaned up that S10 is obtained in the operation of anode 20, the forming method of anode 20 includes steaming
Plating, spraying plating, sputtering, electrochemistry hydatogenesis, electrochemical means etc., are preferably sputtered.
S20 is also included to the substrate 10 formed with anode 20 successively with detergent, acetone, ethanol and each ultrasound of isopropanol
15min is managed, then carries out the operation that UV-ozone makees 15min processing.
S30, hole injection layer 30, hole transmission layer are sequentially formed by solution spin-coating method on the anode 20 that S20 is formed
40 and green light quantum point luminescent layer 50.
The material of hole injection layer 30 is the mixing of poly- 3,4- dioxyethylene thiophenes (PEDOT) and polyphenyl sulfonate (PSS)
Thing.Preferably, the material of hole injection layer 30 is that mass ratio is 3：1 poly- 3,4- dioxyethylene thiophenes (PEDOT) and polyphenyl sulphur
The mixture of hydrochlorate (PSS).
The thickness of hole injection layer 30 is 20nm~40nm.
The material of hole transmission layer 40 is selected from poly- (double (phenyl) benzidine of double (4- the butyl phenyls)-N, N'- of N, N'-)
(Poly-TPD) and it is poly- ((9,9- dioctyl fluorene -2,7- diyls)-altogether (4,4'- (N- (4- sec-butyls phenyl) diphenylamines))
At least one of (TFB).
The thickness of hole transmission layer 40 is 20nm~40nm.
The material of green light quantum point luminescent layer 50 is green light quantum point.Preferably, green light quantum point is core shell structure
CdSe@ZnS green light quantum points, the particle diameter of the CdSe@ZnS green light quantum points of core shell structure is 6nm~15nm, wherein, " CdSe@
ZnS " is that ZnS coats CdSe.The CdSe@ZnS green light quantum points of core shell structure can be directly commercially available.
Preferably, the particle diameter of the CdSe@ZnS green light quantum points of core shell structure is 12.5nm.
The thickness of green light quantum point luminescent layer 50 is 8nm~15nm, so that green light quantum point luminescent layer 50 is endless
Total continuity film so that hole can partially pass through green light quantum point luminescent layer 50 without in green light quantum point luminescent layer 50 and hole
The interface of transport layer 40 excessively accumulates.
S40, green energy transmission is sequentially formed by vacuum vapour deposition on the green light quantum point luminescent layer 50 that S30 is formed
Layer 60, electron transfer layer 70, electron injecting layer 80 and negative electrode 90.
The material of green energy transfer layer 60 is green organic luminescence.Specifically, green organic luminescence is selected from
Three (8-hydroxyquinoline) aluminium (Alq3), 2,3,6,7- tetrahydrochysene -1,1,7,7- tetramethyls -1H, 5H, 11H-10- (2-[4-morpholinodithios
Base)-quinolizino [9,9A, 1GH] cumarin (C545) and three (2- phenylpyridines) close iridium (III) (Ir (ppy)3) at least one
Kind.
The thickness of green energy transfer layer 60 is 0.2nm~2nm, so that green energy transfer layer 60 can not be formed certainly
The strong luminescence of body, the luminescent spectrum and excitation of green light quantum point luminescent layer 50 are not influenceed.
The material of electron transfer layer 70 is selected from N- aryl benzimidazole (TPBi), diphenyl o-phenanthroline (Bphen), oxidation
Zinc (ZnO) and titanium dioxide (TiO2At least one of).
The thickness of electron transfer layer 70 is 30nm~60nm.
The material of electron injecting layer 80 is selected from lithium fluoride (LiF), lithium carbonate (Li2CO3), cesium carbonate (Cs2CO3), nitridation caesium
(CsN3), at least one of cesium chloride (CsCl) and cesium fluoride (CsF).
The thickness of electron injecting layer 80 is 0.5nm~5nm.
The material of negative electrode 90 is aluminium (Al), silver-colored (Ag), magnesium (Mg), barium (Ba) or calcium (Ca).
The thickness of negative electrode 90 is 80nm~150nm.
The preparation method of this green light quantum point membrane electro luminescent device, technique is simple, operation facility, goes for
The preparation of green light quantum point membrane electro luminescent device.
It is specific embodiment below.
Embodiment 1
Substrate of glass is respectively first ultrasonically treated 15min with detergent, acetone, ethanol and isopropanol successively.Then glass base
A layer thickness is sputtered on plate and is 150nm ITO conducting films, then carries out UV-ozone and makees 15min processing.
Then solution spin-coating method spin quality ratio is used as 3：1 PEDOT and PSS mixture prepare hole injection layer,
Rotating speed is 5000rpm, and anneal 30min at 150 DEG C, and the thickness of hole injection layer is 20nm.Then spin coating 18mg/mL poly-
TPD chlorobenzene solution prepares hole transmission layer, rotating speed 3000rpm, and anneal 60min, thickness 40nm at 110 DEG C.Make afterwards
Standby green light quantum point luminescent layer, using the toluene solution of 7mg/mL green glow CdSe@ZnS quantum dots, rotating speed 2000rpm, 150 DEG C
Lower annealing 30min, thickness 12nm, obtains semi-finished product.
Semi-finished product are transferred to pressure as 10 afterwards-4In high vacuum cavity under Pa, sunk successively with the method for vacuum evaporation
Product 0.5nm Alq3As green energy transfer layer, 30nm TPBi is as electron transfer layer, and 1nm LiF is as electron injection
Layer, last vacuum evaporation 100nm Al obtain required green light quantum point membrane electro luminescent device as negative electrode.
Embodiment 2
Substrate of glass is respectively first ultrasonically treated 15min with detergent, acetone, ethanol and isopropanol successively.Then glass base
A layer thickness is sputtered on plate and is 150nm ITO conducting films, then carries out UV-ozone and makees 15min processing.
Then solution spin-coating method spin quality ratio is used as 3：1 PEDOT and PSS mixture prepare hole injection layer,
Rotating speed is 5000rpm, and anneal 30min at 150 DEG C, thickness 20nm.Then spin coating 18mg/mL poly-TPD chlorobenzene solution
Prepare hole transmission layer, rotating speed 3000rpm, anneal at 110 DEG C 60min, thickness 40nm.Green light quantum point hair is prepared afterwards
Photosphere, using the toluene solution of 5mg/mL green glow CdSe@ZnS quantum dots, rotating speed 2000rpm, anneal at 150 DEG C 30min, thick
Spend for 8nm, obtain semi-finished product.
Semi-finished product are transferred to pressure as 10 afterwards-4In high vacuum cavity under Pa, sunk successively with the method for vacuum evaporation
Product 1.8nm C545 is as green energy transfer layer, and 30nm TPBi is as electron transfer layer, and 1nm LiF is as electron injection
Layer, last vacuum evaporation 100nm Al obtain required green light quantum point membrane electro luminescent device as negative electrode.
Embodiment 3
Substrate of glass is respectively first ultrasonically treated 15min with detergent, acetone, ethanol and isopropanol successively.Then glass base
A layer thickness is sputtered on plate and is 150nm ITO conducting films, then carries out UV-ozone and makees 15min processing.
Then solution spin-coating method spin quality ratio is used as 3：1 PEDOT and PSS mixture prepare hole injection layer,
Rotating speed is 5000rpm, and anneal 30min at 150 DEG C, thickness 20nm.Then spin coating 18mg/mL poly-TPD chlorobenzene solution
Prepare hole transmission layer, rotating speed 3000rpm, anneal at 110 DEG C 60min, thickness 40nm.Green light quantum point hair is prepared afterwards
Photosphere, using the toluene solution of 7mg/mL green glow CdSe@ZnS quantum dots, rotating speed 2000rpm, anneal at 150 DEG C 30min, thick
Spend for 12nm, obtain semi-finished product.
Semi-finished product are transferred to pressure as 10 afterwards-4In high vacuum cavity under Pa, sunk successively with the method for vacuum evaporation
Product 0.2nm Ir (ppy)3As green energy transfer layer, 30nm TPBi is as electron transfer layer, and 1nm LiF is as electronics
Implanted layer, last vacuum evaporation 100nm Al obtain required green light quantum point membrane electro luminescent device as negative electrode.
Embodiment 4
The process that embodiment 4 prepares green light quantum point membrane electro luminescent device is substantially the same manner as Example 1, unique difference
It is, the thickness of green light quantum point luminescent layer is 15nm in embodiment 4.
Carry out luminous test respectively to obtained green light quantum point membrane electro luminescent device in embodiment 1~4, obtain figure
3。
As seen from Figure 3, green light quantum point membrane electro luminescent device is respectively provided with made from 1~embodiment of embodiment 4
Preferable luminescent properties.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (9)
- A kind of 1. green light quantum point membrane electro luminescent device, it is characterised in that including stack gradually substrate, anode, hole Implanted layer, hole transmission layer, green light quantum point luminescent layer, green energy transfer layer, electron transfer layer, electron injecting layer and the moon Pole；The material of the green light quantum point luminescent layer is green light quantum point, the thickness of the green light quantum point luminescent layer for 8nm~ 15nm；The green light quantum point be core shell structure CdSe@ZnS green light quantum points, the CdSe@ZnS green glow amounts of the core shell structure The particle diameter of son point is 6nm~15nm, wherein, " CdSe@ZnS " are that ZnS coats CdSe；The material of the green energy transfer layer is green organic luminescence, and the thickness of the green energy transfer layer is 0.2nm~2nm.
- 2. green light quantum point membrane electro luminescent device according to claim 1, it is characterised in that the organic hair of green glow Luminescent material is selected from three (8-hydroxyquinoline) aluminium, 2,3,6,7- tetrahydrochysene -1,1,7,7- tetramethyls -1H, 5H, 11H-10- (2- benzo thiophenes Oxazolyl) at least one of-quinolizino [9,9A, 1GH] cumarin and three (2- phenylpyridines) conjunction iridium.
- 3. green light quantum point membrane electro luminescent device according to claim 1, it is characterised in that the material of the anode For ITO, FTO, AZO or IZO, the thickness of the anode is 80nm~200nm.
- 4. green light quantum point membrane electro luminescent device according to claim 1, it is characterised in that the hole injection layer Material for poly- 3,4- dioxyethylene thiophenes and polyphenyl sulfonate mixture, the thickness of the hole injection layer for 20nm~ 40nm。
- 5. green light quantum point membrane electro luminescent device according to claim 1, it is characterised in that the hole transmission layer Material be selected from poly- (N, N'- double (4- butyl phenyls)-N, N'- double (phenyl) benzidine) and poly- ((9,9- dioctyl fluorenes -2,7- Diyl)-altogether at least one of (4,4'- (N- (4- sec-butyls phenyl) diphenylamines)), the thickness of the hole transmission layer is 20nm~40nm.
- 6. green light quantum point membrane electro luminescent device according to claim 1, it is characterised in that the electron transfer layer Material be selected from least one of N- aryl benzimidazole, diphenyl o-phenanthroline, zinc oxide and titanium dioxide, the electronics The thickness of transport layer is 30nm~60nm.
- 7. green light quantum point membrane electro luminescent device according to claim 1, it is characterised in that the electron injecting layer Material be selected from least one of lithium fluoride, lithium carbonate, cesium carbonate, nitridation caesium, cesium chloride and cesium fluoride, the electron injection The thickness of layer is 0.5nm~5nm.
- 8. green light quantum point membrane electro luminescent device according to claim 1, it is characterised in that the material of the negative electrode For aluminium, silver, magnesium, barium or calcium, the thickness of the negative electrode is 80nm~150nm.
- 9. according to the preparation method of green light quantum point membrane electro luminescent device according to any one of claims 1 to 8, it is special Sign is, comprises the following steps：Substrate is provided and the substrate is cleaned；Anode is formed in the substrate cleaned up；Hole injection layer, hole transmission layer and green light quantum point are sequentially formed on the anode by solution spin-coating method to light Layer, wherein, the material of the green light quantum point luminescent layer is green light quantum point, and the thickness of the green light quantum point luminescent layer is 8nm~15nm；AndOn the green light quantum point luminescent layer by vacuum vapour deposition sequentially form green energy transfer layer, electron transfer layer, Electron injecting layer and negative electrode, wherein, the material of the green energy transfer layer is green organic luminescence, the green energy The thickness of transfer layer is 0.2nm~2nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610213168.XA CN105826482B (en) | 2016-04-07 | 2016-04-07 | Green light quantum point membrane electro luminescent device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610213168.XA CN105826482B (en) | 2016-04-07 | 2016-04-07 | Green light quantum point membrane electro luminescent device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105826482A CN105826482A (en) | 2016-08-03 |
| CN105826482B true CN105826482B (en) | 2017-12-22 |
Family
ID=56525667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610213168.XA Expired - Fee Related CN105826482B (en) | 2016-04-07 | 2016-04-07 | Green light quantum point membrane electro luminescent device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105826482B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111244310B (en) * | 2018-11-29 | 2023-12-26 | 固安鼎材科技有限公司 | Organic electroluminescent device and organic electroluminescent display device |
| CN110311058B (en) * | 2019-06-05 | 2021-01-22 | 河南大学 | Positive QLED device based on AZO electrode and preparation method thereof |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070077594A1 (en) * | 2003-12-02 | 2007-04-05 | Koninklijke Philips Electronics | Electroluminescent device |
| US20090039764A1 (en) * | 2005-03-17 | 2009-02-12 | Cho Kyung Sang | Quantum Dot Light-Emitting Diode Comprising Inorganic Electron Transport Layer |
| JP2009087744A (en) * | 2007-09-28 | 2009-04-23 | Dainippon Printing Co Ltd | Light-emitting element |
| WO2009052122A1 (en) * | 2007-10-16 | 2009-04-23 | Hcf Partners, L.P. | Organic light-emitting diodes with electrophosphorescent-coated emissive quantum dots |
| CN103904178B (en) * | 2014-04-11 | 2016-08-17 | 浙江大学 | Quantum dot light emitting device |
| CN104979485A (en) * | 2015-07-08 | 2015-10-14 | Tcl集团股份有限公司 | High-performance quantum dot LED and preparation method thereof |
| CN105140412A (en) * | 2015-09-01 | 2015-12-09 | Tcl集团股份有限公司 | QLED device with high light-emitting efficiency and preparation method thereof |
| CN105140361B (en) * | 2015-09-11 | 2019-08-27 | Tcl集团股份有限公司 | Light emitting diode with quantum dots and preparation method thereof |
| CN105206715B (en) * | 2015-09-16 | 2019-09-17 | Tcl集团股份有限公司 | A kind of QLED and preparation method thereof of exciton confinement structure |
| CN105280829B (en) * | 2015-09-17 | 2018-01-12 | Tcl集团股份有限公司 | Qled and preparation method thereof |
| CN105244451B (en) * | 2015-10-16 | 2018-08-14 | Tcl集团股份有限公司 | A kind of light emitting diode with quantum dots and preparation method thereof with mixing HTL |
| CN105449112B (en) * | 2016-01-12 | 2018-04-20 | 纳晶科技股份有限公司 | Quanta point electroluminescent device, have its display device and lighting device |
-
2016
- 2016-04-07 CN CN201610213168.XA patent/CN105826482B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN105826482A (en) | 2016-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105845833B (en) | White light quanta point membrane electro luminescent device and preparation method thereof | |
| CN105826481B (en) | White light quanta point membrane electro luminescent device and preparation method thereof | |
| CN105870349A (en) | Light emitting diode, preparing method of light emitting diode and luminescent device | |
| CN106920827A (en) | A kind of light emitting diode, array base palte, luminescent device and display device | |
| CN105845834B (en) | It is inverted green light quantum point membrane electro luminescent device | |
| US10566565B2 (en) | Organic light emitting device and method of fabricating the same, and display device | |
| CN105895816A (en) | Inverted blue light quantum-dot thin film electroluminescence device and manufacturing method thereof | |
| CN105895813B (en) | Blue light quantum point membrane electro luminescent device and preparation method thereof | |
| CN105826482B (en) | Green light quantum point membrane electro luminescent device and preparation method thereof | |
| KR20130078043A (en) | Organic electroluminescence element including graphene oxide as hole transport layer | |
| CN105895815B (en) | It is inverted blue light quantum point membrane electro luminescent device | |
| CN105845840B (en) | It is inverted green light quantum point membrane electro luminescent device | |
| CN105845839B (en) | It is inverted green light quantum point membrane electro luminescent device | |
| CN105845835B (en) | It is inverted green light quantum point membrane electro luminescent device | |
| US20070069637A1 (en) | Polymer light emitting diode having interinsulation layer and method for fabricating the same | |
| CN105895814B (en) | It is inverted blue light quantum point membrane electro luminescent device | |
| CN105845838B (en) | It is inverted blue light quantum point membrane electro luminescent device | |
| WO2024040561A1 (en) | Light-emitting device and preparation method therefor, and display panel and display apparatus | |
| CN105870272B (en) | It is inverted blue light quantum point membrane electro luminescent device and preparation method thereof | |
| CN105845837A (en) | Inverted green light quantum dot film electroluminescence device and manufacturing method thereof | |
| CN104733637A (en) | Organic light-emitting device and manufacturing method thereof | |
| CN103824954A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104638141A (en) | Organic light-emitting device and production method thereof | |
| CN104347803A (en) | Organic electroluminescence device and preparation method thereof | |
| CN104051661A (en) | Organic electroluminescent device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171222 Termination date: 20200407 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |