CN105826482A - Green-light quantum dot thin-film electroluminescence device and preparation method thereof - Google Patents
Green-light quantum dot thin-film electroluminescence device and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a green-light quantum dot thin-film electroluminescence device and a preparation method thereof. The green-light quantum dot thin-film electroluminescence device comprises a substrate, an anode, a cavity injection layer, a cavity transmission layer, a green-light quantum dot luminescent layer, a green-light energy transfer layer, an electron transmission layer, an electron injection layer and a cathode which are successively stacked, wherein the green-light quantum dot luminescent layer has a thickness of 8nm to 15nm, and the green-light energy transfer layer has a thickness of 0.2nm to 2nm. The green-light quantum dot thin-film electroluminescence device, first of all, employs the 8nm-15nm-thick green-light quantum dot luminescent layer so that the green-light quantum dot luminescent layer is enabled to form a not completely continuous thin film, cavities are enabled to partially pass through the green-light quantum dot luminescent layer and are not accumulated too much on an interface between the green-light quantum dot luminescent layer and the cavity transmission layer, after excitors are formed at the green-light energy transfer layer, the excitors then arrive at the green-light quantum dot luminescent layer through an energy transfer mode to enable the green-light quantum dot luminescent layer to emit light, and the problem of quite high cavity injection barriers of the green-light quantum dot thin-film electroluminescence device is solved.
Description
Technical field
The present invention relates to membrane electro luminescent device field, particularly relate to a kind of green light quantum point membrane electro luminescent device and preparation method thereof.
Background technology
Quantum dot (quantumdots, QDs) is made up of a limited number of atom, and three dimension are all in nanometer scale.Quantum dot is generally spherical or class is spherical, that be made up of semi-conducting material (being generally made up of II B～VI A or III A～V element A), stable diameter 2～20nm nanoparticle.Quantum dot is the aggregation of the atom on nanoscale and molecule, both can be made up of a kind of semi-conducting material, as being made up of IIB.VIA race element (such as CdS, CdSe, CdTe, ZnSe etc.) or IIIA.VA race element (such as InP, InAs etc.), it is also possible to be made up of two or more semi-conducting material.As the semiconductor nano material of a kind of novelty, quantum dot has much unique nanometer character, and can apply the luminescent layer as membrane electro luminescent device.
But, the transparent anode ITO work function conventional due to membrane electro luminescent device is 4.8eV, its HOMO energy level (> 6.0eV with QDs) differ farther out, thus result in hole injection barrier in QLED device the highest, need the hole-injecting material of high HOMO energy level to help the injection in hole, but the most conventional its HOMO energy level of hole-injecting material is generally 5.2eV～6.0eV, substantially the requirement that hole is injected can be met for HONGGUANG QDs (～6.0eV), but for green glow QDs (～6.5eV) and blue light QDs (～6.8eV), owing to hole injection barrier is higher, it is difficult to meet the requirement that hole is injected.
Summary of the invention
Based on this, it is necessary to provide a kind of and can solve the problem that green light quantum point membrane electro luminescent device of problem that hole injection barrier is higher and preparation method thereof.
A kind of green light quantum point membrane electro luminescent device, including the substrate stacked gradually, anode, hole injection layer, hole transmission layer, green light quantum point luminescent layer, green energy transfer layer, electron transfer layer, electron injecting layer and negative electrode；
The material of described green light quantum point luminescent layer is green light quantum point, and the thickness of described green light quantum point luminescent layer is 8nm～15nm；
The material of described green energy transfer layer is green organic luminescence, and the thickness of described green energy transfer layer is 0.2nm～2nm.
In one embodiment, described green light quantum point is the CdSeZnS green light quantum point of nucleocapsid structure, and the particle diameter of the CdSeZnS green light quantum point of described nucleocapsid structure is 6nm～15nm, and wherein, " CdSeZnS " is that ZnS is coated with CdSe.
In one embodiment, described green organic luminescence selected from three (8-hydroxyquinoline) aluminum, 2,3,6,7-tetrahydrochysene-1,1,7,7-tetramethyl-1H, 5H, 11H-10-(2-[4-morpholinodithio base)-quinolizino [9,9A, 1GH] coumarin and three (2-phenylpyridines) close at least one in iridium.
In one embodiment, the material of described anode is ITO, FTO, AZO or IZO, and the thickness of described anode is 80nm～200nm.
In one embodiment, the material of described hole injection layer is poly-3,4-dioxyethylene thiophene and the mixture of polyphenyl sulfonate, and the thickness of described hole injection layer is 20nm～40nm.
In one embodiment, the material of described hole transmission layer is selected from poly-(N, double (4-the butyl phenyl)-N of N'-, double (phenyl) benzidine of N'-) and poly-((9,9-dioctyl fluorene-2,7-diyl)-it being total at least one in (4,4'-(N-(4-sec-butyl phenyl) diphenylamines)), the thickness of described hole transmission layer is 20nm～40nm.
In one embodiment, at least one in N-aryl benzimidazole, diphenyl o-phenanthroline, zinc oxide and titanium dioxide of the material of described electron transfer layer, the thickness of described electron transfer layer is 30nm～60nm.
In one embodiment, at least one in lithium fluoride, lithium carbonate, cesium carbonate, nitridation caesium, cesium chloride and cesium fluoride of the material of described electron injecting layer, the thickness of described electron injecting layer is 0.5nm～5nm.
In one embodiment, the material of described negative electrode is aluminum, silver, magnesium, barium or calcium, and the thickness of described negative electrode is 80nm～150nm.
The preparation method of above-mentioned green light quantum point membrane electro luminescent device, comprises the steps:
Substrate is provided and described substrate is carried out；
The described substrate cleaned up is formed anode；
Sequentially forming hole injection layer, hole transmission layer and green light quantum point luminescent layer by solution spin-coating method on described anode, wherein, the material of described green light quantum point luminescent layer is green light quantum point, and the thickness of described green light quantum point luminescent layer is 8nm～15nm；And
Described green light quantum point luminescent layer sequentially forms green energy transfer layer, electron transfer layer, electron injecting layer and negative electrode by vacuum vapour deposition, wherein, the material of described green energy transfer layer is green organic luminescence, and the thickness of described green energy transfer layer is 0.2nm～2nm.
nullThis green light quantum point membrane electro luminescent device，Initially with the green light quantum point luminescent layer that thickness is 8nm～15nm，So that green light quantum point luminescent layer forms incomplete continuous film，Make hole can partially pass through green light quantum point luminescent layer and too much not accumulate with hole transport bed boundary at green light quantum point luminescent layer，Then between green light quantum point luminescent layer and electron transfer layer, insert the green energy transfer layer that HOMO energy level is relatively low relative to the HOMO energy level of green light quantum point luminescent layer，Through hole injection layer after holes from anode injection、Green light quantum point luminescent layer can be partially passed through after hole transmission layer arrive the position of green energy transfer layer and form exciton，Then (ET is transmitted by energy，EnergyTransfer) mode arrives and makes it luminous on green light quantum point luminescent layer，This green energy transfer layer is positioned at the interface of green light quantum point luminescent layer and electron transfer layer simultaneously，The thickness of green energy transfer layer is 0.2nm～2nm，So that green energy transfer layer cannot form the strong luminescence of self，Do not affect luminescent spectrum and the excitation thereof of green light quantum point membrane electro luminescent device，Solve the problem that the hole injection barrier of green light quantum point membrane electro luminescent device is higher.
Accompanying drawing explanation
Fig. 1 is the structural representation of the green light quantum point membrane electro luminescent device of an embodiment；
Fig. 2 is the flow chart of the preparation method of green light quantum point membrane electro luminescent device as shown in Figure 1；
Fig. 3 is embodiment 1～the luminescent properties comparison diagram of the prepared green light quantum point membrane electro luminescent device of embodiment 4.
Detailed description of the invention
Mainly in combination with drawings and the specific embodiments, the preparation method of green light quantum point membrane electro luminescent device is described in further detail below.
The green light quantum point membrane electro luminescent device of an embodiment as shown in Figure 1, including the substrate 10 stacked gradually, anode 20, hole injection layer 30, hole transmission layer 40, green light quantum point luminescent layer 50, green energy transfer layer 60, electron transfer layer 70, electron injecting layer 80 and negative electrode 90.
Substrate 10 is generally selected the glass that transmitance is higher.
The material of anode 20 is indium tin oxide (ITO), fluorine doped tin oxide (FTO), the zinc oxide (AZO) mixing aluminum or indium-doped zinc oxide (IZO).
The thickness of anode 20 is 80nm～200nm.
The material of hole injection layer 30 is poly-3,4-dioxyethylene thiophene (PEDOT) and the mixture of polyphenyl sulfonate (PSS).Preferably, the material of hole injection layer 30 be mass ratio be poly-the 3 of 3:1,4-dioxyethylene thiophene (PEDOT) and the mixture of polyphenyl sulfonate (PSS).
The thickness of hole injection layer 30 is 20nm～40nm.
The material of hole transmission layer 40 is selected from poly-(N, double (4-the butyl phenyl)-N of N'-, double (phenyl) benzidine of N'-) (Poly-TPD) and poly-((9,9-dioctyl fluorene-2,7-diyl)-it is total at least one in (4,4'-(N-(4-sec-butyl phenyl) diphenylamines)) (TFB).
The thickness of hole transmission layer 40 is 20nm～40nm.
The material of green light quantum point luminescent layer 50 is green light quantum point.Preferably, green light quantum point is the CdSeZnS green light quantum point of nucleocapsid structure, and the particle diameter of the CdSeZnS green light quantum point of nucleocapsid structure is 6nm～15nm, and wherein, " CdSeZnS " is that ZnS is coated with CdSe.The CdSeZnS green light quantum point of nucleocapsid structure can directly be commercially available.
Preferably, the particle diameter of the CdSeZnS green light quantum point of nucleocapsid structure is 12.5nm.
The thickness of green light quantum point luminescent layer 50 is 8nm～15nm, so that green light quantum point luminescent layer 50 is incomplete continuous film so that hole can partially pass through green light quantum point luminescent layer 50 and too much not accumulate with hole transmission layer 40 interface at green light quantum point luminescent layer 50.
The material of green energy transfer layer 60 is green organic luminescence.Concrete, green organic luminescence selected from three (8-hydroxyquinoline) aluminum (Alq3), 2,3,6,7-tetrahydrochysene-1,1,7,7-tetramethyl-1H, 5H, 11H-10-(2-[4-morpholinodithio base)-quinolizino [9,9A, 1GH] coumarin (C545) and three (2-phenylpyridines) close iridium (III) (Ir (ppy)3At least one in).
The thickness of green energy transfer layer 60 is 0.2nm～2nm, so that green energy transfer layer 60 cannot form the strong luminescence of self, does not affect luminescent spectrum and the excitation of green light quantum point luminescent layer 50.
The material of electron transfer layer 70 is selected from N-aryl benzimidazole (TPBi), diphenyl o-phenanthroline (Bphen), zinc oxide (ZnO) and titanium dioxide (TiO2In) at least one.
The thickness of electron transfer layer 70 is 30nm～60nm.
The material of electron injecting layer 80 is selected from lithium fluoride (LiF), lithium carbonate (Li2CO3), cesium carbonate (Cs2CO3), nitridation caesium (CsN3), at least one in cesium chloride (CsCl) and cesium fluoride (CsF).
The thickness of electron injecting layer 80 is 0.5nm～5nm.
The material of negative electrode 90 is aluminum (Al), silver (Ag), magnesium (Mg), barium (Ba) or calcium (Ca).
The thickness of negative electrode 90 is 80nm～150nm.
nullThis green light quantum point membrane electro luminescent device，Initially with the green light quantum point luminescent layer 50 that thickness is 8nm～15nm，So that green light quantum point luminescent layer 50 forms incomplete continuous film，Make hole can partially pass through green light quantum point luminescent layer 50 and too much not accumulate with hole transmission layer 40 interface at green light quantum point luminescent layer 50，Then between green light quantum point luminescent layer 50 with electron transfer layer 70, insert the green energy transfer layer 60 that HOMO energy level is relatively low relative to the HOMO energy level of green light quantum point luminescent layer 50，Through hole injection layer 30 after holes from anode 20 injection、Green light quantum point luminescent layer 50 can be partially passed through after hole transmission layer 40 arrive the position of green energy transfer layer 60 and form exciton，Then (ET is transmitted by energy，EnergyTransfer) mode arrives and makes it luminous on green light quantum point luminescent layer 50，This green energy transfer layer 60 is positioned at the interface of green light quantum point luminescent layer 50 and electron transfer layer 70 simultaneously，The thickness of green energy transfer layer 60 is 0.2nm～2nm，So that green energy transfer layer 60 cannot form the strong luminescence of self，Do not affect luminescent spectrum and the excitation thereof of green light quantum point membrane electro luminescent device，Solve the problem that the hole injection barrier of green light quantum point membrane electro luminescent device is higher.
The preparation method of above-mentioned green light quantum point membrane electro luminescent device as shown in Figure 2, comprises the steps:
Substrate 10 is also carried out by S10, offer substrate 10.
Substrate 10 is generally selected the glass that transmitance is higher.
The operation being carried out substrate 10 is: to substrate 10 successively by detergent, acetone, ethanol and each supersound process 15min of isopropanol.
S20, in the substrate 10 cleaned up that S10 obtains formed anode 20.
The material of anode 20 is indium tin oxide (ITO), fluorine doped tin oxide (FTO), the zinc oxide (AZO) mixing aluminum or indium-doped zinc oxide (IZO).
The thickness of anode 20 is 80nm～200nm.
Being formed in the substrate cleaned up that S10 obtains in the operation of anode 20, the forming method of anode 20 includes evaporation, spraying plating, sputtering, electrochemistry hydatogenesis, electrochemical means etc., is preferably sputtering.
S20 also includes being formed with the substrate 10 of anode 20 successively by detergent, acetone, ethanol and each supersound process 15min of isopropanol, then carries out UV-ozone and make the operation that 15min processes.
S30, S20 formed anode 20 on sequentially form hole injection layer 30, hole transmission layer 40 and green light quantum point luminescent layer 50 by solution spin-coating method.
The material of hole injection layer 30 is poly-3,4-dioxyethylene thiophene (PEDOT) and the mixture of polyphenyl sulfonate (PSS).Preferably, the material of hole injection layer 30 be mass ratio be poly-the 3 of 3:1,4-dioxyethylene thiophene (PEDOT) and the mixture of polyphenyl sulfonate (PSS).
The thickness of hole injection layer 30 is 20nm～40nm.
The material of hole transmission layer 40 is selected from poly-(N, double (4-the butyl phenyl)-N of N'-, double (phenyl) benzidine of N'-) (Poly-TPD) and poly-((9,9-dioctyl fluorene-2,7-diyl)-it is total at least one in (4,4'-(N-(4-sec-butyl phenyl) diphenylamines)) (TFB).
The thickness of hole transmission layer 40 is 20nm～40nm.
The material of green light quantum point luminescent layer 50 is green light quantum point.Preferably, green light quantum point is the CdSeZnS green light quantum point of nucleocapsid structure, and the particle diameter of the CdSeZnS green light quantum point of nucleocapsid structure is 6nm～15nm, and wherein, " CdSeZnS " is that ZnS is coated with CdSe.The CdSeZnS green light quantum point of nucleocapsid structure can directly be commercially available.
Preferably, the particle diameter of the CdSeZnS green light quantum point of nucleocapsid structure is 12.5nm.
The thickness of green light quantum point luminescent layer 50 is 8nm～15nm, so that green light quantum point luminescent layer 50 is incomplete continuous film so that hole can partially pass through green light quantum point luminescent layer 50 and too much not accumulate with hole transmission layer 40 interface at green light quantum point luminescent layer 50.
S40, S30 formed green light quantum point luminescent layer 50 on sequentially form green energy transfer layer 60, electron transfer layer 70, electron injecting layer 80 and negative electrode 90 by vacuum vapour deposition.
The material of green energy transfer layer 60 is green organic luminescence.Concrete, green organic luminescence selected from three (8-hydroxyquinoline) aluminum (Alq3), 2,3,6,7-tetrahydrochysene-1,1,7,7-tetramethyl-1H, 5H, 11H-10-(2-[4-morpholinodithio base)-quinolizino [9,9A, 1GH] coumarin (C545) and three (2-phenylpyridines) close iridium (III) (Ir (ppy)3At least one in).
The thickness of green energy transfer layer 60 is 0.2nm～2nm, so that green energy transfer layer 60 cannot form the strong luminescence of self, does not affect luminescent spectrum and the excitation of green light quantum point luminescent layer 50.
The material of electron transfer layer 70 is selected from N-aryl benzimidazole (TPBi), diphenyl o-phenanthroline (Bphen), zinc oxide (ZnO) and titanium dioxide (TiO2In) at least one.
The thickness of electron transfer layer 70 is 30nm～60nm.
The material of electron injecting layer 80 is selected from lithium fluoride (LiF), lithium carbonate (Li2CO3), cesium carbonate (Cs2CO3), nitridation caesium (CsN3), at least one in cesium chloride (CsCl) and cesium fluoride (CsF).
The thickness of electron injecting layer 80 is 0.5nm～5nm.
The material of negative electrode 90 is aluminum (Al), silver (Ag), magnesium (Mg), barium (Ba) or calcium (Ca).
The thickness of negative electrode 90 is 80nm～150nm.
The preparation method of this green light quantum point membrane electro luminescent device, technique is simple, and operation is convenient, goes for the preparation of green light quantum point membrane electro luminescent device.
It it is below specific embodiment.
Embodiment 1
First by substrate of glass successively by detergent, acetone, ethanol and each supersound process 15min of isopropanol.Then sputtering a layer thickness on glass substrate is the ITO conducting film of 150nm, then carries out UV-ozone and make 15min process.
Then using the solution spin-coating method spin quality mixture than PEDOT and PSS for 3:1 to prepare hole injection layer, rotating speed is 5000rpm, and anneal at 150 DEG C 30min, and the thickness of hole injection layer is 20nm.Then the chlorobenzene solution of the poly-TPD of spin coating 18mg/mL prepares hole transmission layer, and rotating speed is 3000rpm, and anneal at 110 DEG C 60min, and thickness is 40nm.Preparing green light quantum point luminescent layer afterwards, use the toluene solution of the green glow CdSeZnS quantum dot of 7mg/mL, rotating speed 2000rpm, anneal at 150 DEG C 30min, and thickness is 12nm, obtains semi-finished product.
It is 10 that semi-finished product are transferred to pressure afterwards-4In fine vacuum cavity under Pa, it is sequentially depositing the Alq of 0.5nm by the method for vacuum evaporation3As green energy transfer layer, the TPBi of 30nm as negative electrode, obtains required green light quantum point membrane electro luminescent device as electron injecting layer, the Al of last vacuum evaporation 100nm as electron transfer layer, the LiF of 1nm.
Embodiment 2
First by substrate of glass successively by detergent, acetone, ethanol and each supersound process 15min of isopropanol.Then sputtering a layer thickness on glass substrate is the ITO conducting film of 150nm, then carries out UV-ozone and make 15min process.
Then using the solution spin-coating method spin quality mixture than PEDOT and PSS for 3:1 to prepare hole injection layer, rotating speed is 5000rpm, and anneal at 150 DEG C 30min, and thickness is 20nm.Then the chlorobenzene solution of the poly-TPD of spin coating 18mg/mL prepares hole transmission layer, and rotating speed is 3000rpm, and anneal at 110 DEG C 60min, and thickness is 40nm.Preparing green light quantum point luminescent layer afterwards, use the toluene solution of the green glow CdSeZnS quantum dot of 5mg/mL, rotating speed 2000rpm, anneal at 150 DEG C 30min, and thickness is 8nm, obtains semi-finished product.
It is 10 that semi-finished product are transferred to pressure afterwards-4In fine vacuum cavity under Pa, it is sequentially depositing the C545 of 1.8nm as green energy transfer layer by the method for vacuum evaporation, the TPBi of 30nm is as electron transfer layer, the LiF of 1nm is as electron injecting layer, the Al of last vacuum evaporation 100nm, as negative electrode, obtains required green light quantum point membrane electro luminescent device.
Embodiment 3
First by substrate of glass successively by detergent, acetone, ethanol and each supersound process 15min of isopropanol.Then sputtering a layer thickness on glass substrate is the ITO conducting film of 150nm, then carries out UV-ozone and make 15min process.
Then using the solution spin-coating method spin quality mixture than PEDOT and PSS for 3:1 to prepare hole injection layer, rotating speed is 5000rpm, and anneal at 150 DEG C 30min, and thickness is 20nm.Then the chlorobenzene solution of the poly-TPD of spin coating 18mg/mL prepares hole transmission layer, and rotating speed is 3000rpm, and anneal at 110 DEG C 60min, and thickness is 40nm.Preparing green light quantum point luminescent layer afterwards, use the toluene solution of the green glow CdSeZnS quantum dot of 7mg/mL, rotating speed 2000rpm, anneal at 150 DEG C 30min, and thickness is 12nm, obtains semi-finished product.
It is 10 that semi-finished product are transferred to pressure afterwards-4In fine vacuum cavity under Pa, it is sequentially depositing the Ir (ppy) of 0.2nm by the method for vacuum evaporation3As green energy transfer layer, the TPBi of 30nm as negative electrode, obtains required green light quantum point membrane electro luminescent device as electron injecting layer, the Al of last vacuum evaporation 100nm as electron transfer layer, the LiF of 1nm.
Embodiment 4
The process that embodiment 4 prepares green light quantum point membrane electro luminescent device is substantially the same manner as Example 1, and unique difference is, in embodiment 4, the thickness of green light quantum point luminescent layer is 15nm.
The green light quantum point membrane electro luminescent device prepared in embodiment 1～4 is carried out respectively luminous test, obtains Fig. 3.
As seen from Figure 3, the green light quantum point membrane electro luminescent device that embodiment 1～embodiment 4 prepare is respectively provided with preferable luminescent properties.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes more concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that, for the person of ordinary skill of the art, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement, these broadly fall into protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a green light quantum point membrane electro luminescent device, it is characterised in that include substrate, anode, hole injection layer, hole transmission layer, green light quantum point luminescent layer, green energy transfer layer, electron transfer layer, electron injecting layer and the negative electrode stacked gradually；
The material of described green light quantum point luminescent layer is green light quantum point, and the thickness of described green light quantum point luminescent layer is 8nm～15nm；
The material of described green energy transfer layer is green organic luminescence, and the thickness of described green energy transfer layer is 0.2nm～2nm.
Green light quantum point membrane electro luminescent device the most according to claim 1, it is characterized in that, described green light quantum point is the CdSeZnS green light quantum point of nucleocapsid structure, the particle diameter of the CdSeZnS green light quantum point of described nucleocapsid structure is 6nm～15nm, wherein, " CdSeZnS " is that ZnS is coated with CdSe.
Green light quantum point membrane electro luminescent device the most according to claim 1, it is characterised in that described green organic luminescence selected from three (8-hydroxyquinoline) aluminum, 2,3,6,7-tetrahydrochysene-1,1,7,7-tetramethyl-1H, 5H, 11H-10-(2-[4-morpholinodithio base)-quinolizino [9,9A, 1GH] coumarin and three (2-phenylpyridines) close at least one in iridium.
Green light quantum point membrane electro luminescent device the most according to claim 1, it is characterised in that the material of described anode is ITO, FTO, AZO or IZO, the thickness of described anode is 80nm～200nm.
Green light quantum point membrane electro luminescent device the most according to claim 1, it is characterised in that the material of described hole injection layer is poly-3,4-dioxyethylene thiophene and the mixture of polyphenyl sulfonate, the thickness of described hole injection layer is 20nm～40nm.
Green light quantum point membrane electro luminescent device the most according to claim 1, it is characterized in that, the material of described hole transmission layer is selected from poly-(N, double (4-the butyl phenyl)-N of N'-, double (phenyl) benzidine of N'-) and poly-((9,9-dioctyl fluorene-2,7-diyl)-it is total to (4,4'-(N-(4-sec-butyl phenyl) diphenylamines)) at least one, the thickness of described hole transmission layer is 20nm～40nm.
Green light quantum point membrane electro luminescent device the most according to claim 1, it is characterized in that, at least one in N-aryl benzimidazole, diphenyl o-phenanthroline, zinc oxide and titanium dioxide of the material of described electron transfer layer, the thickness of described electron transfer layer is 30nm～60nm.
Green light quantum point membrane electro luminescent device the most according to claim 1, it is characterized in that, at least one in lithium fluoride, lithium carbonate, cesium carbonate, nitridation caesium, cesium chloride and cesium fluoride of the material of described electron injecting layer, the thickness of described electron injecting layer is 0.5nm～5nm.
Green light quantum point membrane electro luminescent device the most according to claim 1, it is characterised in that the material of described negative electrode is aluminum, silver, magnesium, barium or calcium, the thickness of described negative electrode is 80nm～150nm.
10. according to the preparation method of the green light quantum point membrane electro luminescent device according to any one of claim 1～9, it is characterised in that comprise the steps:
Substrate is provided and described substrate is carried out；
The described substrate cleaned up is formed anode；
Sequentially forming hole injection layer, hole transmission layer and green light quantum point luminescent layer by solution spin-coating method on described anode, wherein, the material of described green light quantum point luminescent layer is green light quantum point, and the thickness of described green light quantum point luminescent layer is 8nm～15nm；And
Described green light quantum point luminescent layer sequentially forms green energy transfer layer, electron transfer layer, electron injecting layer and negative electrode by vacuum vapour deposition, wherein, the material of described green energy transfer layer is green organic luminescence, and the thickness of described green energy transfer layer is 0.2nm～2nm.
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| CN110311058A (en) * | 2019-06-05 | 2019-10-08 | 河南大学 | A kind of eurymeric QLED device and preparation method thereof based on AZO electrode |
| CN111244310A (en) * | 2018-11-29 | 2020-06-05 | 固安鼎材科技有限公司 | Organic electroluminescent device and organic electroluminescent display device |
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