CN105932028A - Self-luminous display device - Google Patents
Self-luminous display device Download PDFInfo
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- CN105932028A CN105932028A CN201610404638.0A CN201610404638A CN105932028A CN 105932028 A CN105932028 A CN 105932028A CN 201610404638 A CN201610404638 A CN 201610404638A CN 105932028 A CN105932028 A CN 105932028A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Abstract
The invention provides a self-luminous display device. The device simultaneously has the OLED and QLED, a red light-emitting layer, a green light-emitting layer and a blue light-emitting layer of a red light-emitting device, the green light-emitting device and a blue light-emitting device are the organic light-emitting layers or quantum dot light-emitting layers, and the red light-emitting layer, the green light-emitting layer and the blue light-emitting layer at least comprise one organic light-emitting layer and one quantum dot light-emitting layer, each of the red light-emitting layer, the green light-emitting layer and the blue light-emitting layer is manufactured through a liquid-phase film-forming method. The material utilization rate is high, the production cost is low, thereby improving the cost advantage of the product in the large-size display device.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of self-emission display apparatus.
Background technology
Organic Light Emitting Diode (Organic Light Emitting Diodes, OLED) display device has
Self-luminous, driving voltage is low, luminous efficiency is high, response time is short, definition and contrast are high, nearly 180 °
Visual angle, use temperature range width, can realize the plurality of advantages such as Flexible Displays and large area total colouring, quilt
Industry is known as the display device being there is most development potentiality.
OLED display device belongs to emissive type display device, generally includes and is used separately as anode and negative electrode
Pixel electrode and public electrode and the organic light emission merit that is located between pixel electrode and public electrode
Ergosphere so that when suitable voltage is applied in anode with negative electrode, luminous from organic luminescence function layer.
The hole that organic luminescence function layer includes the hole injection layer being located on anode, is located on hole injection layer
Transport layer, the luminescent layer being located on hole transmission layer, the electron transfer layer being located on luminescent layer, it is located at electricity
Electron injecting layer in sub-transport layer, its luminescence mechanism is that electronics and hole are divided under certain voltage drives
It is not injected into electron injecting layer and hole injection layer, electronics and hole respectively through electronics from negative electrode and anode
Transport layer and hole transmission layer move to luminescent layer, and meet in luminescent layer, form exciton and make luminescence
Molecule excites, and the latter sends visible ray through radiative relaxation.
Along with the development of Display Technique, the display quality of display device is required more and more higher by people.
Quantum dot (Quantum Dots, QDs) is typically spherical half be made up of II-VI or III-group Ⅴ element
Conductor nanoparticle, particle diameter is typically between several nanometers to tens nanometer.Quanta point material is due to minimum wavelength
The existence of territory effect, continuous print energy band becomes discrete level structure originally, can launch after being excited by the external world
Visible ray.Quanta point electroluminescent diode (Quantum dots Light-emitting Diodes, QLED)
The same with OLED is all emissive type diode, and OLED display the most on the market is all to use to steam
Being plated to membrane process prepare, stock utilization is low, causes cost to remain high, particularly large scale OLED
Display device is especially prominent.And if employing liquid phase film-forming process prepares OLED display device or QLED shows
Show device, produce waste of material the most hardly, advantageously reduce OLED display device or QLED shows
Device cost.
Summary of the invention
It is an object of the invention to provide a kind of self-emission display apparatus, there is OLED and QLED simultaneously,
Stock utilization is high, and production cost is low, and product has cost advantage in large scale display device.
For achieving the above object, the present invention provides a kind of self-emission display apparatus, including several array arrangements
Red, green, blue sub-pixels region；
Described red subpixel areas includes substrate, be located on substrate TFT unit, by described TFT unit
Drive and be located at the emitting red light device on TFT unit, the packaging plastic being located on described emitting red light device
Material and be located at the cover plate on described packaging adhesive material；
Described green subpixel areas includes substrate, be located on substrate TFT unit, by described TFT unit
Drive and be located at the green light emitting device on TFT unit, the packaging plastic being located on described green light emitting device
Material and be located at the cover plate on described packaging adhesive material；
Described blue subpixel areas includes substrate, be located on substrate TFT unit, by described TFT unit
Drive and be located at the blue luminescent device on TFT unit, the packaging plastic being located on described blue luminescent device
Material and be located at the cover plate on described packaging adhesive material；
Anode that described emitting red light device includes being cascading from the bottom to top, HONGGUANG hole injection layer,
HONGGUANG hole transmission layer, red light luminescent layer, HONGGUANG electron transfer layer and negative electrode；
Anode that described green light emitting device includes being cascading from the bottom to top, green glow hole injection layer,
Green glow hole transmission layer, green light emitting layer, green glow electron transfer layer and negative electrode；
Anode that described blue luminescent device includes being cascading from the bottom to top, blue light hole injection layer,
Blue light hole transmission layer, blue light-emitting, blue light electron transfer layer and negative electrode；
Described red, green, blue luminescent layer is organic luminous layer or quantum dot light emitting layer, and described red, green,
Blue light-emitting at least includes an organic luminous layer and a quantum dot light emitting layer；Described red, green, blue
Light luminescent layer all uses liquid phase membrane formation process to prepare.
The thickness of the organic luminous layer in described red, green, blue luminescent layer is 5nm-100nm；
The thickness of the quantum dot light emitting layer in described red, green, blue luminescent layer is 1nm-100nm.
The material of described anode is selected from transparent conductive metal oxide material and high-work-function metal material, institute
The thickness stating anode is 20nm-200nm.
The material of described red, green, blue hole injection layer is selected from organic molecule hole-injecting material and gathers
Compound hole-injecting material, described red, green, blue hole injection layer uses liquid phase membrane formation process to prepare, described
The thickness of red, green, blue hole injection layer is 1nm-100nm.
The material of described red, green, blue hole transmission layer is selected from organic molecule hole mobile material and gathers
Compound hole mobile material, described red, green, blue hole transmission layer uses liquid phase membrane formation process to prepare, described
The thickness of red, green, blue hole transmission layer is 1nm-100nm.
Alternatively, the material of described red, green, blue electron transfer layer is selected from organic molecule electric transmission material
Material and polymer-electronics transmission material, described red, green, blue electron transfer layer uses liquid phase film forming legal system
, the thickness of described red, green, blue electron transfer layer is 1nm-200nm.
Alternatively, the material of described red, green, blue electron transfer layer is organic molecule electron transport material,
Described red, green, blue electron transfer layer uses the method for vacuum evaporation to prepare.
The material of described negative electrode is selected from low work function metal material, and described negative electrode uses vacuum deposition method to prepare,
The thickness of described negative electrode is 50nm-1000nm.
Described TFT unit includes the active layer being formed on substrate, is formed on described substrate and active layer
Gate insulator, corresponding to the top at described active layer two ends and be formed at the source on described gate insulator
Pole and drain electrode, it is formed on described gate insulator and grid between source electrode and drain electrode and being formed at
Flatness layer in described gate insulator, grid, source electrode and drain electrode；
Described source electrode and drain electrode are connected by the two ends of the via on described gate insulator with described active layer
Connect；Described drain electrode is connected with described anode by the via on described flatness layer.
The material of red, green, blue hole injection layer is identical；The material of described red, green, blue hole transmission layer
Expect identical；The material of described red, green, blue electron transfer layer is identical.
Beneficial effects of the present invention: the present invention provides a kind of self-emission display apparatus, have simultaneously OLED and
QLED, the red, green, blue luminescent layer of red, green, blue color luminescent device is organic luminous layer or quantum dot
Luminescent layer, and red, green, blue luminescent layer at least include an organic luminous layer and a quantum dot light emitting
Layer, described red, green, blue luminescent layer all uses liquid phase membrane formation process to prepare, and stock utilization is high, produces into
This is low, thus improves product cost advantage in large scale display device.
In order to be able to be further understood that inventive feature and technology contents, refer to below in connection with the present invention
Detailed description and accompanying drawing, but accompanying drawing only provide with reference to and explanation use, not be used for the present invention is limited
System.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings, by the detailed description of the invention of the present invention is described in detail, the skill of the present invention will be made
Art scheme and other beneficial effect are apparent.
In accompanying drawing,
Fig. 1 is the structural representation of the self-emission display apparatus of the present invention.
Detailed description of the invention
By further illustrating the technological means and effect thereof that the present invention taked, below in conjunction with the present invention's
Preferred embodiment and accompanying drawing thereof are described in detail.
Referring to Fig. 1, the present invention provides a kind of self-emission display apparatus, including several array arrangements red,
Green, blue subpixel areas.
Specifically, the TFT unit that described red subpixel areas includes substrate 110, is located on substrate 110
210, driven and be located at the emitting red light device 310 on TFT unit 210 by described TFT unit 210, set
Packaging adhesive material 120 on described emitting red light device 310 and be located at the cover plate on described packaging adhesive material 120
130。
Specifically, the TFT unit that described green subpixel areas includes substrate 110, is located on substrate 110
210, driven and be located at the green light emitting device 320 on TFT unit 210 by described TFT unit 210, set
Packaging adhesive material 120 on described green light emitting device 320 and be located at the cover plate on described packaging adhesive material 120
130。
Specifically, the TFT unit that described blue subpixel areas includes substrate 110, is located on substrate 110
210, driven and be located at the blue luminescent device 330 on TFT unit 210 by described TFT unit 210, set
Packaging adhesive material 120 on described blue luminescent device 330 and be located at the cover plate on described packaging adhesive material 120
130。
Specifically, described emitting red light device 310 includes being cascading from the bottom to top anode 301, red
Photohole implanted layer 311, HONGGUANG hole transmission layer 312, red light luminescent layer 313, HONGGUANG electron transfer layer 314,
And negative electrode 302.
Specifically, described green light emitting device 320 includes being cascading from the bottom to top anode 301, green
Photohole implanted layer 321, green glow hole transmission layer 322, green light emitting layer 323, green glow electron transfer layer 324,
And negative electrode 302.
Specifically, described blue luminescent device 330 includes anode 301, the indigo plant being cascading from the bottom to top
Photohole implanted layer 331, blue light hole transmission layer 332, blue light-emitting 333, blue light electron transfer layer 334,
And negative electrode 302.
Specifically, described red, green, blue luminescent layer 313,323,333 is organic luminous layer or quantum
Point luminescent layer, and described red, green, blue luminescent layer 313,323,333 at least include one organic
Photosphere and a quantum dot light emitting layer；The most correspondingly, described red, green, blue color luminescent device 310,320,
330 is OLED or QLED, and at least a part of which includes an an OLED and QLED.Described organic
Luminescent layer is the luminescent layer in OLED, for organic molecule luminescent material or the film of polymer luminescent material
Layer, described quantum dot light emitting layer is the luminescent layer in QLED, for comprising the film layer of quantum dot light emitting material.
Specifically, described red, green, blue luminescent layer 313,323,333 all uses liquid phase membrane formation process to prepare,
Described liquid phase membrane formation process is specially inkjet printing (Ink-jet Printing, IJP) method or nozzle print (Nozzle
Printing) method, it is possible to directly form coating according to default pattern, and relative to vacuum evaporation membrane formation process,
Stock utilization is high, and production cost is low, thus improves product cost advantage in large scale display device.
Specifically, the thickness of the organic luminous layer in described red, green, blue luminescent layer 313,323,333
For 5nm-100nm.
Specifically, the film of the quantum dot light emitting layer in described red, green, blue luminescent layer 313,323,333
Thickness is 1nm-100nm.
Specifically, described anode 301 is for injecting to red, green, blue hole injection layer 311,321,331
Hole, its material selected from transparent conductive metal material such as tin indium oxide (Indium Tin Oxide, ITO),
Indium zinc oxide (Indium Zinc Oxide, IZO) and zinc oxide (ZnO) etc., high-work-function metal
Such as gold (Au), platinum (Pt), silver (Ag) and copper (Cu) etc., or above-mentioned high-work-function metal
Alloy, above-mentioned anode material can be used alone, it is possible to two or more are applied in combination.Described anode 301
Thickness be 20nm-200nm, preferred material be ITO, preferably thickness be 100nm.
Specifically, described red, green, blue hole injection layer 311,321,331 is respectively used to help hole
It is injected into described red, green, blue hole transmission layer 312,322,332 from anode 301 respectively, its material
Selected from organic molecule hole-injecting material and polymer hole injection material, described red, green, blue is empty
Cave implanted layer 311,321,331 uses liquid phase membrane formation process to prepare, and specifically uses ink-jet printing process or spray
Mouth impact system prepares, and the thickness of described red, green, blue hole injection layer 311,321,331 is 1nm-100nm,
Preferred material is poly-(3,4-ethylenedioxythiophene): poly-(styrene sulfonate)
(poly (ethylenedioxythiophene): polystyrene sulphonate, PEDT:PSS), preferably thickness
It is 10nm.
Specifically, described red, green, blue hole transmission layer 312,322,332 for by hole from red,
Green, blue light hole injection layer 311,321,331 is transferred to red, green, blue luminescent layer 313,323,333
In, its material be selected from organic molecule hole mobile material and polymeric hole transport material, described red,
Green, blue light hole transmission layer 312,322,332 uses liquid phase membrane formation process to prepare, and specifically uses inkjet printing
Method or nozzle print method prepare, the film of described red, green, blue hole transmission layer 312,322,332
Thickness is 1nm-100nm, preferred material be poly-(9-VCz) (poly (9-vinlycarbazole),
PVK), preferably thickness is 20nm.
Specifically, described red, green, blue electron transfer layer 314,324,334 is adapted to assist in electronics from the moon
Pole 302 is transferred in red, green, blue luminescent layer 313,323,333, and its material is selected from organic molecule electricity
Son transmission material and polymer-electronics transmission material, wherein, organic molecule electron transport material can be used
The method film forming of vacuum evaporation, it is also possible to use liquid phase membrane formation process such as ink-jet printing process and nozzle print method film forming,
Polymer-electronics transmission material liquid phase membrane formation process such as ink-jet printing process and nozzle print method film forming, described red,
Thickness green, blue light hole transmission layer 312,322,332 is 1nm-200nm, and preferred material is three (8-
Hydroxyquinoline lithium) (tri (8-quinolinolato) aluminum, Liq3), preferably thickness is 30nm.
Specifically, described negative electrode 302 be used for injecting electrons into red, green, blue electron transfer layer 314,324,
In 334, material selected from low workfunction metal material such as lithium (Li), magnesium (Mg), calcium (Ca), strontium (Sr),
Lanthanum (La), cerium (Ce), europium (Eu), ytterbium (Yb), aluminum (Al), caesium (Cs) and rubidium (Rb)
Deng, or the alloy of above-mentioned low workfunction metal, above-mentioned cathode material can be used alone, it is possible to two kinds or
Person is more to be applied in combination, and the thickness of described negative electrode 302 is 50nm to 1000nm, and described negative electrode 302 is specifically adopted
Prepare by vacuum evaporation membrane formation process.Described negative electrode 302 preferred material be Al, preferably thickness be 100nm.
Specifically, described TFT unit 210 includes the active layer 211 being formed on substrate 110, is formed at institute
State the gate insulator 212 on substrate 110 and active layer 211, be formed on described gate insulator 212 right
The source electrode 214 of active layer 211 end positions described in Ying Yu and drain electrode 215, it is formed at described gate insulator 212
Upper and grid 213 between source electrode 214 and drain electrode 215 and be formed at described gate insulator 212, grid
Flatness layer 216 in pole 213, source electrode 214 and drain electrode 215.
Specifically, described source electrode 214 and drain electrode 215 are by the via on described gate insulator 212 and institute
The two ends stating active layer 211 are connected；Described drain electrode 215 passes through the via on described flatness layer 216 with described
Anode 301 is connected.
Specifically, the most described red, green, blue color luminescent device 310,320,330 is OLED or QLED,
The material of its red, green, blue hole injection layer 311,321,331 can be the same or different, red,
Material green, blue light hole transmission layer 312,322,332 can be the same or different, red, green, blue
The material of photoelectron transfer layer 314,324,334 can be the same or different.Preferably, described red,
Material green, blue light hole injection layer 311,321,331 is identical, described red, green, blue hole transport
The material of layer 312,322,332 is identical, described red, green, blue electron transfer layer 314,324,334
Material identical, such that it is able to reduce material and processing procedure cost.
In the preferred embodiment of the present invention, described red, green light emitting device 310,320 is OLED,
Described blue luminescent device 330 is QLED；Wherein, described red light luminescent layer 313 is organic luminous layer, its
Material is poly-(2-methoxyl group-5-(2-ethyl hexyl oxy)-1,4-phenylene ethylene) (poly [2-methoxy-5-(2 '
-ethyhexyloxy-1,4-phenylenevinylene)], MEH-PPV), its thickness is 40nm；Described green
Light luminescent layer 323 is organic luminous layer, and its material is 9,9-di-n-octyl fluorenes-benzo [2,1,3] thiadiazoles copolymer
(poly (9,9-dioctylfluorene-alt-benzothiadiazole), F8BT), its thickness is 50nm；Institute
Stating blue light-emitting 333 for quantum dot light emitting layer, its material is with cadmium selenide for the core zinc sulfide nucleocapsid as shell
The quanta point material (CdSe-ZnS core-shell QDs) of structure, its thickness is 30nm；Described red, green,
Material and the thickness of blue light hole injection layer 311,321,331 are the most identical, and its material is PEDT:PSS,
Its thickness is 30nm；The material of described red, green, blue hole transmission layer 312,322,332 and thickness
The most identical, its material is PVK, and its thickness is 5nm；Described red, green, blue electron transfer layer 314,
324, material and the thickness of 334 are the most identical, and its material is three (8-hydroxyquinoline) aluminum (Alq3), its film
Thickness is 30nm；The material of described anode 301 is ITO, and thickness is 100nm；The material of described negative electrode 302
For Al, thickness is 100nm.
In sum, a kind of self-emission display apparatus that the present invention provides, there is OLED and QLED simultaneously,
The red, green, blue luminescent layer of red, green, blue color luminescent device is organic luminous layer or quantum dot light emitting layer,
And red, green, blue luminescent layer at least includes an organic luminous layer and a quantum dot light emitting layer, described
Red, green, blue luminescent layer all uses liquid phase membrane formation process to prepare, and stock utilization is high, and production cost is low, from
And improve product cost advantage in large scale display device.
The above, for the person of ordinary skill of the art, can be according to the technical side of the present invention
Other various corresponding changes and deformation are made in case and technology design, and all these change and deformation are all answered
Belong to the protection domain of the claims in the present invention.
Claims (10)
1. a self-emission display apparatus, it is characterised in that include the red, green, blue of several array arrangement
Sub-pixels region；
Described red subpixel areas includes substrate (110), be located on substrate (110) TFT unit (210),
By described TFT unit (210) drive and be located at the emitting red light device (310) on TFT unit (210),
It is located at the packaging adhesive material (120) on described emitting red light device (310) and is located at described packaging adhesive material (120)
On cover plate (130)；
Described green subpixel areas includes substrate (110), be located on substrate (110) TFT unit (210),
By described TFT unit (210) drive and be located at the green light emitting device (320) on TFT unit (210),
The packaging adhesive material (120) be located on described green light emitting device (320) and be located at described packaging adhesive material (120)
On cover plate (130)；
Described blue subpixel areas includes substrate (110), be located on substrate (110) TFT unit (210),
By described TFT unit (210) drive and be located at the blue luminescent device (330) on TFT unit (210),
The packaging adhesive material (120) be located on described blue luminescent device (330) and be located at described packaging adhesive material (120)
On cover plate (130)；
Anode (301) that described emitting red light device (310) includes being cascading from the bottom to top, red
Photohole implanted layer (311), HONGGUANG hole transmission layer (312), red light luminescent layer (313), HONGGUANG
Electron transfer layer (314) and negative electrode (302)；
Anode (301) that described green light emitting device (320) includes being cascading from the bottom to top, green
Photohole implanted layer (321), green glow hole transmission layer (322), green light emitting layer (323), green glow
Electron transfer layer (324) and negative electrode (302)；
Described blue luminescent device (330) includes anode (301), the indigo plant being cascading from the bottom to top
Photohole implanted layer (331), blue light hole transmission layer (332), blue light-emitting (333), blue light
Electron transfer layer (334) and negative electrode (302)；
Described red, green, blue luminescent layer (313,323,333) is organic luminous layer or quantum dot is sent out
Photosphere, and described red, green, blue luminescent layer (313,323,333) at least include one organic
Photosphere and a quantum dot light emitting layer；Described red, green, blue luminescent layer (313,323,333) is all adopted
Prepare by liquid phase membrane formation process.
2. self-emission display apparatus as claimed in claim 1, it is characterised in that described red, green, blue
The thickness of the organic luminous layer in luminescent layer (313,323,333) is 5nm-100nm；
The thickness of the quantum dot light emitting layer in described red, green, blue luminescent layer (313,323,333) is
1nm-100nm。
3. self-emission display apparatus as claimed in claim 1, it is characterised in that described anode (301)
Material selected from transparent conductive metal oxide material and high-work-function metal material, described anode (301)
Thickness be 20nm-200nm.
4. self-emission display apparatus as claimed in claim 1, it is characterised in that described red, green, blue
The material of hole injection layer (311,321,331) is selected from organic molecule hole-injecting material and polymerization
Thing hole-injecting material, described red, green, blue hole injection layer (311,321,331) uses liquid phase
Membrane formation process prepares, and the thickness of described red, green, blue hole injection layer (311,321,331) is 1nm-100nm.
5. self-emission display apparatus as claimed in claim 1, it is characterised in that described red, green, blue
The material of hole transmission layer (312,322,332) is selected from organic molecule hole mobile material and polymerization
Thing hole mobile material, described red, green, blue hole transmission layer (312,322,332) uses liquid phase
Membrane formation process prepares, and the thickness of described red, green, blue hole transmission layer (312,322,332) is 1nm-100nm.
6. self-emission display apparatus as claimed in claim 1, it is characterised in that described red, green, blue
The material of electron transfer layer (314,324,334) is selected from organic molecule electron transport material and polymerization
Thing electron transport material, described red, green, blue electron transfer layer (314,324,334) uses liquid phase
Membrane formation process prepares, and the thickness of described red, green, blue electron transfer layer (314,324,334) is 1nm-200nm.
7. self-emission display apparatus as claimed in claim 1, it is characterised in that described red, green, blue
The material of electron transfer layer (314,324,334) is organic molecule electron transport material, described red,
Green, blue light electron transfer layer (314,324,334) uses the method for vacuum evaporation to prepare.
8. self-emission display apparatus as claimed in claim 1, it is characterised in that described negative electrode (302)
Material selected from low work function metal material, described negative electrode (302) uses vacuum deposition method to prepare, described
The thickness of negative electrode (302) is 50nm-1000nm.
9. self-emission display apparatus as claimed in claim 1, it is characterised in that described TFT unit (210)
Including the active layer (211) being formed on substrate (110), it is formed at described substrate (110) and has
Gate insulator (212) in active layer (211), top corresponding to described active layer (211) two ends
And the source electrode (214) being formed on described gate insulator (212) with drain electrode (215), be formed at institute
State gate insulator (212) upper and be positioned at source electrode (214) and the grid (213) drained between (215),
And it is formed at described gate insulator (212), grid (213), source electrode (214) and drain electrode (215)
On flatness layer (216)；
Described source electrode (214) and drain electrode (215) are by the via on described gate insulator (212)
It is connected with the two ends of described active layer (211)；Described flatness layer (216) is passed through in described drain electrode (215)
On via be connected with described anode (301).
10. self-emission display apparatus as claimed in claim 1, it is characterised in that red, green, blue is empty
The material of cave implanted layer (311,321,331) is identical；Described red, green, blue hole transmission layer (312,
322,332) material is identical；Described red, green, blue electron transfer layer (314,324,334)
Material is identical.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610404638.0A CN105932028A (en) | 2016-06-07 | 2016-06-07 | Self-luminous display device |
| PCT/CN2016/087328 WO2017210927A1 (en) | 2016-06-07 | 2016-06-27 | Self-illuminating display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610404638.0A CN105932028A (en) | 2016-06-07 | 2016-06-07 | Self-luminous display device |
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| Publication Number | Publication Date |
|---|---|
| CN105932028A true CN105932028A (en) | 2016-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610404638.0A Pending CN105932028A (en) | 2016-06-07 | 2016-06-07 | Self-luminous display device |
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| CN (1) | CN105932028A (en) |
| WO (1) | WO2017210927A1 (en) |
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| CN106992267A (en) * | 2017-04-28 | 2017-07-28 | 深圳市华星光电技术有限公司 | A kind of top emission OLED device and preparation method, display panel |
| CN107424524A (en) * | 2017-07-25 | 2017-12-01 | 深圳市华星光电技术有限公司 | A kind of miniature LED display panel |
| WO2018120108A1 (en) * | 2016-12-27 | 2018-07-05 | 武汉华星光电技术有限公司 | Top emission type oled display unit, manufacturing method, and display panel |
| CN109585503A (en) * | 2018-10-08 | 2019-04-05 | 惠科股份有限公司 | Display panel and preparation method thereof |
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