CN105895814B - It is inverted blue light quantum point membrane electro luminescent device - Google Patents
It is inverted blue light quantum point membrane electro luminescent device Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/156—Hole transporting layers comprising a multilayered structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
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Abstract
The invention discloses one kind to be inverted blue light quantum point membrane electro luminescent device, including substrate, negative electrode, electron transfer layer, blue light quantum point luminescent layer, hole transmission layer and the anode stacked gradually.Hole transmission layer includes the first hole transmission layer, the second hole transmission layer and the 3rd hole transmission layer stacked gradually.The thickness of first hole transmission layer is 5nm~10nm.The HOMO energy levels of first hole transmission layer, the second hole transmission layer and the 3rd hole transmission layer are sequentially reduced, so as to form steps potential barrier between blue light quantum point luminescent layer and anode, reach the Hole injection capacity for stepping up hole transmission layer, meet the requirement of the hole injection of blue light quantum point membrane electro luminescent device.
Description
Technical field
The present invention relates to light emitting device technologies field, and blue light quantum point TFEL device is inverted more particularly, to one kind
Part.
Background technology
Quantum dot (QDs, quantum dots) is semiconductor nano that some can not visually see, extremely small
Body, particle diameter are generally less than 10nm.Stimulated when by light or electricity, quantum dot can send coloured light, and the color of light is by measuring
The composition material and size shape of son point determine that this characteristic enables quantum dot to change the light color that light source is sent.By
In electronics, hole and exciton on three-dimensional space direction by quantum confinement so that QDs band structure by block continuous structure
Become the discrete energy level structure with molecular characterization.When the bohr of QDs particle diameters and ten thousand Neil excitons (Wannier exciton) half
Footpath (Bohr radius) is quite or more hour, the locality of electronics and coherence's enhancing, the absorption coefficient of exciton band increase, gone out
Existing exciton absorbs by force, can launch hyperfluorescence after being excited, and symmetrical emission spectrum, width and continuous absorption spectra etc. with narrow
Advantage.With QDs change in size, the effect of quantum effect enables it to gap width and changed therewith, so as to send different colours
Light.With light emitting diode with quantum dots made of QDs (QLEDs, quantum dot light emitting diodes) also by
This possesses the features such as high efficiency, rich in color, high stability.
However, the hole of traditional quantum dot film electroluminescent device (QLED) is not easy injection, it is necessary to high HOMO
The hole-injecting material of (Highest Occupied Molecular Orbital, highest occupied molecular orbital) energy level helps
The injection in hole.Especially for blue light quantum point membrane electro luminescent device, the HOMO energy levels of blue light quantum point are generally large,
About 6.8eV, and the work function of in general transparent anode is about less than 5.0eV, both differ farther out, cause in QLED devices
Hole injection barrier is universal higher, and the HOMO energy levels of conventional hole-injecting material are generally 5.0eV~5.5eV, Wu Faman
The requirement of sufficient hole injection.
The content of the invention
Based on this, it is necessary to provide a kind of inversion blue light quantum point TFEL that can meet hole injection and require
Device.
One kind be inverted blue light quantum point membrane electro luminescent device, including stack gradually substrate, negative electrode, electric transmission
Layer, blue light quantum point luminescent layer, hole transmission layer and anode；
The first hole transmission layer, the second hole transmission layer and the 3rd hole that the hole transmission layer includes stacking gradually pass
Defeated layer, first hole transmission layer directly contact with the blue light quantum point luminescent layer, the thickness of first hole transmission layer
Spend for 5nm~10nm；
It is mixed that the material of first hole transmission layer is that the first hole mobile material and the second hole mobile material are formed
Compound, the material of second hole transmission layer is the second hole mobile material and the mixing of the 3rd hole mobile material formation
Thing, the material of the 3rd hole transmission layer is the 3rd hole mobile material and the mixture of the 4th hole mobile material formation；
The HOMO energy levels of first hole transmission layer are 6.04eV~6.8eV, the HOMO of second hole transmission layer
Energy level is 5.6eV~6.03eV, and the HOMO energy levels of the 3rd hole transmission layer are 4.2eV~5.6eV, and first hole passes
The HOMO energy levels of defeated layer, second hole transmission layer and the 3rd hole transmission layer are sequentially reduced.
In one embodiment, the material of the blue light quantum point luminescent layer is selected from CdSe@ZnS core shell structure blue light amounts
Son point or ZnCdS@ZnS core shell structure blue light quantum points, wherein ,@represents cladding, and CdSe or ZnCdS are the core shell structure amount
The core of son point, ZnS are the shell of the nuclear shell structure quantum point.
In one embodiment, the thickness of the blue light quantum point luminescent layer is 15nm~30nm.
In one embodiment, first hole mobile material, second hole mobile material, the 3rd sky
The HOMO energy levels of hole transport materials and the 4th hole mobile material are sequentially reduced.
In one embodiment, the first hole mobile material described in first hole transmission layer and second sky
The mass ratio of hole transport materials is 3:2~3:1, first hole mobile material be selected from 2- hydroxy-3-methyl -2- cyclopentene -
1- ketone and 6,6- bis- (4-9 hydrogen-carbazole -9- bases) phenyl) one kind in -6 hydrogen-pyrroles [3,2,1-de] acridine, described second is empty
Hole transport materials are selected from 4,4'- double (9H- carbazole -9- bases) biphenyl, 8,8- bis- (4- (9 hydrogen-carbazole -9- bases) phenyl) -8 hydrogen-Yin
Diindyl [3,2,1-de] acridine and 3,5- bis- (9 hydrogen-carbazole -9- bases)-nitrogen, one kind in nitrogen-biphenyl ammonia.
In one embodiment, the second hole mobile material described in second hole transmission layer and the 3rd sky
The mass ratio of hole transport materials is 3:4~3:2, second hole mobile material is selected from 4,4'- double (9H- carbazole -9- bases) connection
Benzene, (4- (9 hydrogen-carbazole -9- bases) phenyl) -8 hydrogen-indoles [3,2,1-de] acridines of 8,8- bis- and (9 hydrogen-carbazole -9- of 3,5- bis-
Base)-nitrogen, one kind in nitrogen-biphenyl ammonia, the 3rd hole mobile material is selected from N, N '-two (1- naphthyls)-N, N '-diphenyl-
One kind in 1,1 '-biphenyl -4-4 '-diamines and 2,2 ' two (3- dimethyl benzenes aminobenzene) 1,1 ' biphenyl.
In one embodiment, the 3rd hole mobile material described in the 3rd hole transmission layer and the 4th sky
The mass ratio of hole transport materials is 2:3~1:1, the 3rd hole mobile material is selected from N, N '-two (1- naphthyls)-N, N '-two
Phenyl -1,1 '-biphenyl -4-4 '-diamines and 2, one kind in 2 ' two (3- dimethyl benzenes aminobenzene) 1,1 ' biphenyl, the described 4th is empty
The one kind of hole transport materials in molybdenum trioxide, tungstic acid, vanadium oxide and titanium cyanines copper.
In one embodiment, first hole transmission layer, second hole transmission layer and the 3rd hole
The thickness of transport layer increases successively.
In one embodiment, the thickness of second hole transmission layer is 10nm~20nm, and the 3rd hole passes
The thickness of defeated layer is 20nm~30nm.
In one embodiment, the one kind of the anode in aluminium, silver, gold and platinum.
Above-mentioned inversion blue light quantum point membrane electro luminescent device, including stack gradually substrate, negative electrode, electric transmission
Layer, blue light quantum point luminescent layer, hole transmission layer and anode.Hole transmission layer includes the first hole transport stacked gradually
Layer, the second hole transmission layer and the 3rd hole transmission layer.Wherein, the first hole directly contacted with blue light quantum point luminescent layer passes
The thickness of defeated layer is 5nm~10nm, the first hole transmission layer of thinner thickness, on the basis of enough hole injections are ensured,
The leakage current of electroluminescent device can be effectively reduced, improves luminous efficiency.Meanwhile first hole transmission layer, the second hole pass
The material of defeated layer and the 3rd hole transmission layer is the mixture that two kinds of hole mobile materials are formed, two layers adjacent of hole transport
There is a kind of identical hole mobile material in layer so that potential barrier change is gentle between hole transmission layer, further reduces blue light
QLED driving voltage.The HOMO energy levels of first hole transmission layer are 6.04eV~6.8eV, the HOMO energy levels with blue light quantum point
It is close；The HOMO energy levels of 3rd hole transmission layer are 4.2eV~5.6eV, close with the work function of anode；And the first hole passes
The HOMO energy levels of defeated layer, the second hole transmission layer and the 3rd hole transmission layer are sequentially reduced, so as in blue light quantum point luminescent layer
Steps potential barrier is formed between anode, reaches the Hole injection capacity for stepping up sub- hole transmission layer, meets blue light quantum
The requirement of the hole injection of point membrane electro luminescent device.
Brief description of the drawings
Fig. 1 is the structural representation of the inversion blue light quantum point membrane electro luminescent device of an embodiment；
Fig. 2 is the level structure principle schematic for being inverted blue light quantum point membrane electro luminescent device；
Fig. 3 is the flow chart of the preparation method of the inversion blue light quantum point membrane electro luminescent device of an embodiment；
Fig. 4 is respectively to the inversion blue light quantum point thin-film electro in embodiment 1, embodiment 2, embodiment 3 and comparative example
Electroluminescence device carries out the result figure of luminance test.
Embodiment
It is described in further detail below mainly in combination with accompanying drawing to being inverted blue light quantum point membrane electro luminescent device.
As shown in figure 1, the inversion blue light quantum point membrane electro luminescent device 10 of an embodiment, including stack gradually
Substrate 100, negative electrode 200, electron transfer layer 300, blue light quantum point luminescent layer 400, hole transmission layer 500 and anode 600.
The material of substrate 100 can be glass, and glass transmission is good, and conveniently sputter or be deposited conducting film thereon.
The material of negative electrode 200 can be indium tin oxide (ITO), fluorine doped tin oxide (FTO), the zinc oxide (AZO) for mixing aluminium,
Indium-doped zinc oxide (IZO) etc..The thickness of negative electrode 200 can be 80nm~200nm.
Electron transfer layer 300 has preferable electron mobility, can be zinc oxide (ZnO) or titanium dioxide (TiO2) etc..
Specifically, the thickness of electron transfer layer 300 is 30nm~50nm.
The material of blue light quantum point luminescent layer 400 is CdSe@ZnS core shell structure blue light quantum points or ZnCdS@ZnS core shells
Structure blue light quantum dot, wherein ,@represents cladding, CdSe or the core that ZnCdS is the nuclear shell structure quantum point, and ZnS is the core
The shell of core-shell structure quantum dots.The particle diameter of CdSe@ZnS core shell structure blue light quantum points is generally 3nm~6nm, ZnCdS@ZnS core shells
The particle diameter of structure blue light quantum dot is generally 8nm~15nm, and both nuclear shell structure quantum points, brightness is higher, and luminous efficiency is high.
Specifically, the thickness of blue light quantum point luminescent layer 400 is 15nm~30nm.
Hole transmission layer 500 includes the first hole transmission layer 510, the second hole transmission layer 520 and the 3rd stacked gradually
Hole transmission layer 530, the first hole transmission layer 510 directly contact with blue light quantum point luminescent layer 400, the first hole transmission layer
510 thickness is 5nm~10nm.It is 5nm~10nm's that a layer thickness is set in the side for being close to blue light quantum point luminescent layer 400
First hole transmission layer 510 can effectively reduce the leakage of electroluminescent device on the basis of enough hole injections are ensured
Electric current, improve luminous efficiency.
Further, the thickness of the first hole transmission layer 510 is 6nm~8nm.
The level structure principle schematic of blue light quantum point membrane electro luminescent device 10 is inverted as shown in Fig. 2 first is empty
The material of cave transport layer 510 is the mixing that the first hole mobile material (HTL1) and the second hole mobile material (HTL2) are formed
Thing, the material of the second hole transmission layer 520 is the second hole mobile material (HTL2) and the 3rd hole mobile material (HTL3) shape
Into mixture, the material of the 3rd hole transmission layer 530 is the 3rd hole mobile material (HTL3) and the 4th hole mobile material
(HTL4) mixture formed.The HOMO energy levels of first hole transmission layer 510 and the HOMO energy levels of blue light quantum point luminescent layer 400
(generally 6.8eV or so) is close, and the HOMO energy levels of the 3rd hole transmission layer 530 and anode work function number are (for example, Al work content
Number is 4.0eV or so) it is close, the first hole transmission layer 510, the second hole transmission layer 520 and the 3rd hole transmission layer 530 are formed
Stair-stepping relationship between energy levels, when hole migrates from anode to cathode direction, hole injection barrier is small, and transport efficiency is high.
Specifically, the first hole mobile material (HTL1), the second hole mobile material (HTL2), the 3rd hole mobile material
(HTL3) and the HOMO energy levels of the 4th hole mobile material (HTL4) are sequentially reduced.First hole transmission layer 510, the second hole pass
The defeated hole transmission layer 530 of layer 520 and the 3rd forms doping system using two kinds of hole mobile material (HTL) doping.Compared to biography
A kind of only hole transmission layer of hole mobile material of system, doping system is formed by two kinds of hole mobile material (HTL) doping
Easily realize and obtain different HOMO energy levels, so as to form stair-stepping potential barrier.And in two layers adjacent of hole transmission layer
There is a kind of identical hole mobile material so that potential barrier change is gentle between hole transmission layer, is advantageous to the injection in hole, enters one
Step reduces blue light QLED driving voltage.
Specifically, the HOMO energy levels of the first hole transmission layer 510 are 6.04eV~6.8eV, the second hole transmission layer 520
HOMO energy levels are 5.6eV~6.03eV, and the HOMO energy levels of the 3rd hole transmission layer 530 are 4.2eV~5.6eV, and the first hole passes
The HOMO energy levels of defeated layer 510, the second hole transmission layer 520 and the 3rd hole transmission layer 530 are sequentially reduced.First hole transmission layer
510 HOMO energy levels are close with the HOMO energy levels (being about 6.8eV) of blue light quantum point luminescent layer 400, and the 3rd hole transport
The HOMO energy levels of layer 530 to be close with the work function of anode, by the first hole transmission layer 510, the second hole transmission layer 520 and
3rd hole transmission layer 530 forms steps potential barrier between blue light quantum point luminescent layer and anode, reaches and steps up sub- sky
The Hole injection capacity of cave transport layer, meet the requirement of the hole injection of blue light quantum point membrane electro luminescent device.
Traditional quantum dot film electroluminescent device for just putting structure, because quantum dot light emitting layer (QDs luminescent layers) needs
To be prepared using solwution method, when preparing hole transmission layer 500, solwution method limits hole injection and hole mobile material
It is alternative.The blue light quantum point membrane electro luminescent device 10 of the present invention uses inverted structure, anode 600 in the superiors, from
Substrate 100 is farthest.Hole transmission layer 500 can blue light quantum point luminescent layer 400 preparation after the completion of with the mode of vacuum evaporation come
Prepare, therefore the high HOMO energy levels hole mobile material selectable range matched with blue light quantum point luminescent layer 400 is wider.
Specifically, the first hole mobile material (HTL1) is selected from 2- hydroxy-3-methyl -2- cyclopentene-1-ones (mCP) and 6,
6- bis- (4-9 hydrogen-carbazole -9- bases) phenyl) one kind in -6 hydrogen-pyrroles [3,2,1-de] acridine (BCPPA).HTL1 HOMO energy
Level is higher, close to the HOMO energy levels of blue light quantum point luminescent layer 400 so that easily conducted from the first hole transmission layer 510 in hole
Into in blue light quantum point luminescent layer 400, luminous efficiency is improved.
Second hole mobile material (HTL2) is selected from 4,4'- double (9H- carbazole -9- bases) biphenyl (CBP), (4- (9 of 8,8- bis-
Hydrogen-carbazole -9- bases) phenyl) -8 hydrogen-indoles [3,2,1-de] acridine (FPCC) and 3,5- bis- (9 hydrogen-carbazole -9- bases)-nitrogen, nitrogen -
One kind in biphenyl ammonia (DCDPA).In general, HTL2 HOMO energy levels are less than HTL1 HOMO energy levels.
3rd hole mobile material (HTL3) is selected from N, and N '-two (1- naphthyls)-N, N '-diphenyl -1,1 '-biphenyl -4-4 ' -
One kind in diamines (NPB) and 2,2 ' two (3- dimethyl benzenes aminobenzene) 1,1 ' biphenyl (BTPD).In general, HTL3 HOMO energy
Level is less than HTL2 HOMO energy levels.
((HTL4) is selected from molybdenum trioxide (MoO to 4th hole mobile material3), tungstic acid (WO3), vanadium oxide (V2O5) and
One kind in titanium cyanines copper (CuPc).In general, HTL4 HOMO energy levels are less than HTL3 HOMO energy levels.HTL4 HOMO energy levels one
As it is relatively low, close to the work function of anode so that hole easily from anode conduction enter the 3rd hole transmission layer 530 in, improve hair
Light efficiency.
Specifically, the first hole mobile material (HTL1) and the second hole mobile material in the first hole transmission layer 510
(HTL2) mass ratio is 3:2~3:1.Wherein, the first hole mobile material (HTL1) is selected from 2- hydroxy-3-methyl -2- rings penta
Alkene -1- ketone (mCP) and 6,6- bis- (4-9 hydrogen-carbazole -9- bases) phenyl) in -6 hydrogen-pyrroles [3,2,1-de] acridine (BCPPA)
One kind, the second hole mobile material (HTL1) be selected from double (9H- carbazole -9- bases) biphenyl (CBP) of 4,4'-, 8,8- bis- (4- (9 hydrogen -
Carbazole -9- bases) phenyl) -8 hydrogen-indoles [3,2,1-de] acridine (FPCC) and 3,5- bis- (9 hydrogen-carbazole -9- bases)-nitrogen, nitrogen-connection
One kind in phenylamino (DCDPA).
The matter of second hole mobile material (HTL2) and the 3rd hole mobile material (HTL3) in second hole transmission layer 520
Amount is than being 3:4~3:2.Wherein, the second hole mobile material (HTL2) be selected from double (9H- carbazole -9- bases) biphenyl (CBP) of 4,4'-,
(4- (9 hydrogen-carbazole -9- bases) phenyl) -8 hydrogen-indoles [3,2,1-de] acridines (FPCC) of 8,8- bis- and 3,5- bis- (9 hydrogen-carbazole -
9- yls)-nitrogen, one kind in nitrogen-biphenyl ammonia (DCDPA), the 3rd hole mobile material (HTL3) is selected from N, N '-two (1- naphthyls)-
N, N '-diphenyl -1,1 '-biphenyl -4-4 '-diamines (NPB) and 2,2 ' two (3- dimethyl benzenes aminobenzene) 1,1 ' biphenyl (BTPD)
In one kind.
The matter of 3rd hole mobile material (HTL3) and the 4th hole mobile material (HTL4) in 3rd hole transmission layer 530
Amount is than being 2:3~1:1.Wherein, the 3rd hole mobile material (HTL3) is selected from N, N '-two (1- naphthyls)-N, N '-diphenyl -1,
1 '-biphenyl -4-4 '-diamines (NPB) and 2, one kind in 2 ' two (3- dimethyl benzenes aminobenzene) 1,1 ' biphenyl (BTPD), the 4th is empty
((HTL4) is selected from molybdenum trioxide (MoO to hole transport materials3), tungstic acid (WO3), vanadium oxide (V2O5) and titanium cyanines copper (CuPc) in
One kind.
By adjusting respectively in HTL1 and HTL2 mass ratio in the first hole transmission layer 510, the second hole transmission layer 520
HTL3 and HTL4 mass ratio in HTL2 and HTL3 mass ratio and the 3rd hole transmission layer 530, can be obtained multiple respectively
The first hole transmission layer 510, the second hole transmission layer 520 and the 3rd hole transmission layer 530 of different HOMO energy levels, so as to shape
To successively decrease relation into HOMO energy levels layer by layer, the potential barrier change between the blue light quantum point luminescent layer 400 and anode 600 that make is gentle,
Beneficial to the transmission in hole, luminous efficiency is improved.
Specifically, the thickness of the first hole transmission layer 510, the second hole transmission layer 520 and the 3rd hole transmission layer 530 according to
Secondary increase.The thickness for being close to the first hole transmission layer 510 of blue light quantum point luminescent layer 400 is 5nm~10nm, in hole transport
It is most thin in layer 500, because the hole mobility of the first hole transmission layer 510 is relatively low, 5nm~10nm relatively thin thickness exists
On the basis of ensureing enough hole injections, the leakage current of electroluminescent device is effectively reduced, improves luminous efficiency.Second is empty
The thickness of the hole transmission layer 530 of cave transport layer 520 and the 3rd determines according to the property of hole mobile material.
Specifically, the thickness of the second hole transmission layer 520 is 10nm~20nm, the thickness of the 3rd hole transmission layer 530 is
20nm~30nm.
Traditional QLED only has the hole transmission layer 500 of individual layer, or has sandwich construction, is typically also to make identical thickness
Degree, due to hole, the mobility at each position is not quite similar in hole transmission layer 500, and the efficiency of hole transport is low.The application
In the thickness of the first hole transmission layer 510, the second hole transmission layer 520 and the 3rd hole transmission layer 530 increase successively, according to rank
The potential barrier change of scalariform and hole mobility, the thickness of each layer of hole transmission layer is rationally designed, improve the transmission effect in hole
Rate, and then improve QLED luminous efficiency.
The one kind of anode 600 in aluminium, silver, gold and platinum.Aluminium (Al), silver-colored (Ag), the work function of golden (Au) and platinum (Pt)
It is higher, be advantageous to reduce the barrier potential difference between anode 600 and blue light quantum point luminescent layer 400.
Specifically, the thickness of anode 600 is 100nm~150nm.
Above-mentioned inversion blue light quantum point membrane electro luminescent device 10, including stack gradually substrate 100, negative electrode 200, electricity
Sub- transmitting layer 3 00, blue light quantum point luminescent layer 400, hole transmission layer 500 and anode 600.With blue light quantum point luminescent layer
The thickness of 400 the first hole transmission layers 510 directly contacted is 5nm~10nm, can ensure the base of enough hole injections
On plinth, the leakage current of electroluminescent device 10 is effectively reduced, improves luminous efficiency.First hole transmission layer 510, the second hole
The hole transmission layer 530 of transport layer 520 and the 3rd is the mixture that two kinds of hole mobile materials (HTL) are formed, adjacent two layers
There is a kind of identical hole mobile material in hole transmission layer so that potential barrier change is gentle between hole transmission layer, further drop
Low blue light QLED driving voltage.The HOMO energy levels of first hole transmission layer 510 are 6.04eV~6.8eV, with blue light quantum point
HOMO energy levels it is close；The HOMO energy levels of 3rd hole transmission layer 530 are 4.2eV~5.6eV, close with the work function of anode；
And the HOMO energy levels of the first hole transmission layer 510, the second hole transmission layer 520 and the 3rd hole transmission layer 530 are sequentially reduced,
So as to form steps potential barrier between blue light quantum point luminescent layer 400 and anode 600, reach and step up hole transmission layer
Hole injection capacity, meet the requirement of the hole injection of blue light quantum point membrane electro luminescent device 10.
In addition, the present invention also provides a kind of preparation method of above-mentioned inversion blue light quantum point membrane electro luminescent device 10,
As shown in figure 3, this method comprises the following steps S110~S140.
S110, substrate is provided, negative electrode is formed in substrate.
The material of substrate can be glass, can respectively be ultrasonically treated substrate with detergent, acetone, ethanol and isopropanol successively
15min.Evaporation, spraying plating, sputtering or electrochemistry hydatogenesis form negative electrode in substrate afterwards.The material of negative electrode can be indium tin
Oxide (ITO), fluorine doped tin oxide (FTO), the zinc oxide (AZO) for mixing aluminium, indium-doped zinc oxide (IZO) etc., the thickness of negative electrode
For 80nm~200nm.
Preferably, indium tin oxide (ITO) is sputtered onto in substrate of glass using the method for sputtering.
In present embodiment, after forming negative electrode in substrate, include to formed the substrate of negative electrode use successively detergent,
Acetone, ethanol and isopropanol are respectively ultrasonically treated 15min, then carry out UV ozone (UV-ozone) processing 15min.
Electron transfer layer and blue light quantum point luminescent layer are sequentially formed on S120, the negative electrode obtained in S110.
Electron transfer layer can be prepared on negative electrode conducting film using solution spin-coating method, electron transfer layer can be zinc oxide
Or titanium dioxide (TiO (ZnO)2) etc., thickness 30nm~50nm of electron transfer layer.
Equally, blue light quantum point luminescent layer, blue light quantum point hair can be formed on the electron transport layer using solution spin-coating method
The thickness of photosphere is 15nm~30nm.The material of blue light quantum point luminescent layer can be CdSe ZnS core shell structure blue light quantum points
Or ZnCdS@ZnS core shell structure blue light quantum points.
Form hole transmission layer on S130, the blue light quantum point luminescent layer obtained in S120, hole transmission layer include according to
The first hole transmission layer, the second hole transmission layer and the 3rd hole transmission layer of secondary stacking.
First hole transmission layer, the first hole transmission layer can be formed on blue light quantum point luminescent layer using vacuum vapour deposition
The mixture that is formed for the first hole mobile material (HTL1) and the second hole mobile material (HTL2) of material, the first hole biography
The thickness of defeated layer is 5nm~10nm.Vacuum evaporation forms the second hole transmission layer, the second hole on the first hole transmission layer again
The mixture that the material of transport layer is formed for the second hole mobile material (HTL2) and the second hole mobile material (HTL3), second
The thickness of hole transmission layer can be 10nm~20nm.Vacuum evaporation forms the 3rd hole biography on the second hole transmission layer afterwards
Defeated layer, the material of the 3rd hole transmission layer is the 3rd hole mobile material (HTL3) and the formation of the 4th hole mobile material (HTL4)
Mixture, the thickness of the 3rd hole transmission layer can be 20nm~30nm.
S140, obtain in S130 forming anode on the 3rd hole transmission layer.
Anode can be formed on the 3rd hole transmission layer using evaporation, spraying plating, sputtering or the method for electrochemistry hydatogenesis.
The material of anode may be selected from one kind in aluminium, silver, gold and platinum.
This preparation method for being inverted blue light quantum point membrane electro luminescent device, technique are simple, easy to operate.It is prepared
Blue light quantum point membrane electro luminescent device blue light quantum point luminescent layer and anode between form steps potential barrier, hole passes
The Hole injection capacity of defeated layer is strong, meets the requirement of the hole injection of blue light quantum point membrane electro luminescent device.
It is embodiment part below.
In following examples, unless otherwise instructed, the experimental method of unreceipted actual conditions, generally according to normal condition,
Experiment material used is purchased from Sigma-Aldrich (Shanghai) trade Co., Ltd, lark prestige Science and Technology Ltd...
Embodiment 1
The structure for being inverted blue light quantum point membrane electro luminescent device is substrate, negative electrode, electron transfer layer, blue light quantum point
Luminescent layer, hole transmission layer and anode, its hole-transporting layer include the first hole transmission layer, the second hole stacked gradually
Transport layer and the 3rd hole transmission layer.It is close to blue light quantum point hair in side of first hole transmission layer away from the second hole transmission layer
Photosphere.Wherein, the thickness of the first hole transmission layer is 8nm, and the material of the first hole transmission layer is the first hole mobile material
(HTL1) and the second hole mobile material (HTL2) formed mixture, wherein HTL1 be 2- hydroxy-3-methyl -2- cyclopentene -
1- ketone (mCP), HTL2 3,5- bis- (9 hydrogen-carbazole -9- bases)-nitrogen, nitrogen-biphenyl ammonia (DCDPA), mCP and DCDPA mass ratioes are
3:2.The thickness of second hole transmission layer is 15nm, the material of the second hole transmission layer for the second hole mobile material (HTL2) and
The mixture that second hole mobile material (HTL3) is formed, wherein HTL2 are 3,5- bis- (9 hydrogen-carbazole -9- bases)-nitrogen, nitrogen-biphenyl
Ammonia (DCDPA), the biphenyl (BTPD) of HTL3 2,2 ' two (3- dimethyl benzenes aminobenzene) 1,1 ', DCDPA are 1 with BTPD mass ratioes:
1.The thickness of 3rd hole transmission layer is 25nm, and the material of the 3rd hole transmission layer is the 3rd hole mobile material (HTL3) and the
The mixture that four hole mobile materials (HTL4) are formed, wherein HTL3 is 2,2 ' two (3- dimethyl benzenes aminobenzene) 1,1 ' biphenyl
(BTPD), HTL4 is tungstic acid (WO3), BTPD and WO3Mass ratio be 2:3.
The specific preparation process for being inverted blue light quantum point membrane electro luminescent device is as follows：
Substrate of glass is respectively ultrasonically treated 15min with detergent, acetone, ethanol and isopropanol successively.Then in glass base
A layer thickness is sputtered on plate and is 150nm ITO conducting films, then carries out UV ozone (UV-ozone) processing 15min.Then use
Solution spin-coating method prepares ZnO electron transfer layers in full of nitrogen and the extremely low glove box of water oxygen content, using 20mg/ml's
ZnO nano particle ethanol solution, it is 1500 revs/min (Resolutions per minute, rpm) in rotating speed, temperature 150
Anneal 30min at DEG C, and the thickness of ZnO electron transfer layers is 40nm.Blue light quantum point is prepared on the electron transport layer afterwards to light
Layer, using 20mg/ml blue light CdSe@ZnS quantum dot toluene solutions, in rotating speed 2000rpm, temperature is to be annealed at 150 DEG C
30min, blue light quantum point light emitting layer thickness are 20nm.Device is transferred to pressure as 10 afterwards-4In high vacuum cavity under Pa,
It is successively 3 by mass ratio:2 mCP and DCDPA vacuum evaporation forms the first hole transmission layer, mass ratio 1:1 DCDPA with
BTPD vacuum evaporations form the second hole transmission layer, mass ratio 2:3 BTPD and WO3Vacuum evaporation forms the 3rd hole transport
Layer.Last vacuum evaporation 100nm Al electrodes obtain being inverted blue light quantum point membrane electro luminescent device as anode.
The first hole transmission layer, the second hole transmission layer and the 3rd hole transmission layer are tested respectively, the first hole
The HOMO energy levels of transport layer are 6.1eV, and the HOMO energy levels of the second hole transmission layer are 5.88eV, the 3rd hole transmission layer
HOMO energy levels are 5.57eV.
Luminance test is carried out to the inversion blue light quantum point membrane electro luminescent device being prepared, as a result as shown in Figure 4.
From fig. 4, it can be seen that inversion blue light quantum point membrane electro luminescent device brightness height in embodiment 1 is apparently higher than comparative example.
Embodiment 2
The thickness of the first hole transmission layer is 10nm in the inversion blue light quantum point membrane electro luminescent device of the present embodiment,
The material of first hole transmission layer is the mixture that HTL1 and HTL2 are formed, and wherein HTL1 be mCP, HTL2 DCDPA, mCP and
DCDPA mass ratioes are 3:2.The thickness of second hole transmission layer is 20nm, and the material of the second hole transmission layer is HTL2 and HTL3
The mixture of formation, wherein HTL2 are DCDPA, and HTL3 BTPD, DCDPA and BTPD mass ratio are 3:4.3rd hole transmission layer
Thickness be 30nm, the mixture that the material of the 3rd hole transmission layer is formed for HTL3 and HTL4, wherein HTL3 is BTPD, HTL4
For WO3, BTPD and WO3Mass ratio be 2:3.Remaining is same as Example 1.
The specific preparation method for being inverted blue light quantum point membrane electro luminescent device is same as Example 1.
The HOMO energy levels of first hole transmission layer are 6.1eV, and the HOMO energy levels of the second hole transmission layer are 5.88eV, described
The HOMO energy levels of 3rd hole transmission layer are 5.57eV.
Luminance test is carried out to the inversion blue light quantum point membrane electro luminescent device being prepared, as a result as shown in Figure 4.
From fig. 4, it can be seen that inversion blue light quantum point membrane electro luminescent device brightness height in embodiment 2 is apparently higher than comparative example.
Embodiment 3
The thickness of the first hole transmission layer is 5nm in the inversion blue light quantum point membrane electro luminescent device of the present embodiment,
The material of first hole transmission layer is the mixture that HTL1 and HTL2 are formed, and wherein HTL1 be mCP, HTL2 DCDPA, mCP and
DCDPA mass ratioes are 3:1.The thickness of second hole transmission layer is 10nm, and the material of the second hole transmission layer is HTL2 and HTL3
The mixture of formation, wherein HTL2 are DCDPA, and HTL3 BTPD, DCDPA and BTPD mass ratio are 3:2.3rd hole transmission layer
Thickness be 20nm, the mixture that the material of the 3rd hole transmission layer is formed for HTL3 and HTL4, wherein HTL3 is BTPD, HTL4
For WO3, BTPD and WO3Mass ratio be 1:1.Remaining is same as Example 1.
The specific preparation method for being inverted blue light quantum point membrane electro luminescent device is same as Example 1.
The HOMO energy levels of first hole transmission layer are 6.1eV, and the HOMO energy levels of the second hole transmission layer are 5.88eV, described
The HOMO energy levels of 3rd hole transmission layer are 5.57eV.
Luminance test is carried out to the inversion blue light quantum point membrane electro luminescent device being prepared, as a result as shown in Figure 4.
From fig. 4, it can be seen that inversion blue light quantum point membrane electro luminescent device brightness height in embodiment 2 is apparently higher than comparative example.
Embodiment 4
The thickness of the first hole transmission layer is 10nm in the inversion blue light quantum point membrane electro luminescent device of the present embodiment,
The material of first hole transmission layer is the mixture that HTL1 and HTL2 are formed, and wherein HTL1 be mCP, HTL2 FPCC, mCP and
FPCC mass ratioes are 2:1.The thickness of second hole transmission layer is 15nm, and the material of the second hole transmission layer is HTL2 and HTL3 shapes
Into mixture, wherein HTL2 is FPCC, and HTL3 NPB, FPCC and NPB mass ratio are 3:4.The thickness of 3rd hole transmission layer
For 30nm, mixture that the material of the 3rd hole transmission layer is formed for HTL3 and HTL4, wherein HTL3 is NPB, HTL4 CuPc,
NPB and CuPc mass ratio is 2:3.Remaining is same as Example 1.
The specific preparation method for being inverted blue light quantum point membrane electro luminescent device is same as Example 1.
The HOMO energy levels of first hole transmission layer are 6.1eV, and the HOMO energy levels of the second hole transmission layer are 6.03eV, described
The HOMO energy levels of 3rd hole transmission layer are 5.4eV.
Embodiment 5
The thickness of the first hole transmission layer is 6nm in the inversion blue light quantum point membrane electro luminescent device of the present embodiment,
The material of first hole transmission layer is the mixture that HTL1 and HTL2 is formed, and wherein HTL1 is BCPPA, HTL2 CBP, BCPPA
It is 2 with CBP mass ratioes:1.The thickness of second hole transmission layer is 10nm, and the material of the second hole transmission layer is HTL2 and HTL3
The mixture of formation, wherein HTL2 are CBP, and HTL3 NPB, CBP and NPB mass ratio are 3:4.The thickness of 3rd hole transmission layer
For 20nm, the material of the 3rd hole transmission layer is the mixture of HTL3 and HTL4 formation, and wherein HTL3 is NPB, HTL4 MoO3,
NPB and MoO3Mass ratio be 1:1.Remaining is same as Example 1.
The specific preparation method for being inverted blue light quantum point membrane electro luminescent device is same as Example 1.
The HOMO energy levels of first hole transmission layer are 6.04eV, and the HOMO energy levels of the second hole transmission layer are 5.9eV, described
The HOMO energy levels of 3rd hole transmission layer are 5.4eV.
Embodiment 6
The thickness of the first hole transmission layer is 8nm in the inversion blue light quantum point membrane electro luminescent device of the present embodiment,
The material of first hole transmission layer is the mixture that HTL1 and HTL2 are formed, and wherein HTL1 be mCP, HTL2 DCDPA, mCP and
DCDPA mass ratioes are 3:1.The thickness of second hole transmission layer is 15nm, and the material of the second hole transmission layer is HTL2 and HTL3
The mixture of formation, wherein HTL2 are DCDPA, and HTL3 BTPD, DCDPA and BTPD mass ratio are 3:2.3rd hole transmission layer
Thickness be 20nm, the mixture that the material of the 3rd hole transmission layer is formed for HTL3 and HTL4, wherein HTL3 is BTPD, HTL4
For V2O5, BTPD and V2O5Mass ratio be 2:3.Remaining is same as Example 1.
The specific preparation method for being inverted blue light quantum point membrane electro luminescent device is same as Example 1.
The HOMO energy levels of first hole transmission layer are 6.1eV, and the HOMO energy levels of the second hole transmission layer are 5.88eV, described
The HOMO energy levels of 3rd hole transmission layer are 5.57eV.
Embodiment 7
The thickness of the first hole transmission layer is 6nm in the inversion blue light quantum point membrane electro luminescent device of the present embodiment,
The material of first hole transmission layer is the mixture that HTL1 and HTL2 is formed, and wherein HTL1 is mCP, HTL2 CBP, mCP and CBP
Mass ratio is 3:2.The thickness of second hole transmission layer is 10nm, and the material of the second hole transmission layer is HTL2 and HTL3 formation
Mixture, wherein HTL2 are CBP, and HTL3 NPB, CBP and NPB mass ratio are 3:2.The thickness of 3rd hole transmission layer is
20nm, the material of the 3rd hole transmission layer is the mixture of HTL3 and HTL4 formation, and wherein HTL3 is NPB, HTL4 WO3, NPB
With WO3Mass ratio be 2:3.Remaining is same as Example 1.
The specific preparation method for being inverted blue light quantum point membrane electro luminescent device is same as Example 1.
The HOMO energy levels of first hole transmission layer are 6.1eV, and the HOMO energy levels of the second hole transmission layer are 5.9eV, described
The HOMO energy levels of 3rd hole transmission layer are 5.4eV.
Embodiment 8
The thickness of the first hole transmission layer is 10nm in the inversion blue light quantum point membrane electro luminescent device of the present embodiment,
The material of first hole transmission layer is the mixture that HTL1 and HTL2 is formed, and wherein HTL1 is mCP, HTL2 CBP, mCP and CBP
Mass ratio is 3:1.The thickness of second hole transmission layer is 13nm, and the material of the second hole transmission layer is HTL2 and HTL3 formation
Mixture, wherein HTL2 are CBP, and HTL3 NPB, CBP and NPB mass ratio are 3:2.The thickness of 3rd hole transmission layer is
25nm, the mixture that the material of the 3rd hole transmission layer is formed for HTL3 and HTL4, wherein HTL3 are NPB, HTL4 CuPc,
NPB and CuPc mass ratio is 2:3.Remaining is same as Example 1.
The specific preparation method for being inverted blue light quantum point membrane electro luminescent device is same as Example 1.
The HOMO energy levels of first hole transmission layer are 6.1eV, and the HOMO energy levels of the second hole transmission layer are 5.9eV, described
The HOMO energy levels of 3rd hole transmission layer are 5.4eV.
Comparative example
The structure of the blue light quantum point membrane electro luminescent device of comparative example is substrate, negative electrode, electron transfer layer, blue light amount
Son point luminescent layer, hole transmission layer and anode.Cathode material is ITO, and electron transfer layer ZnO, luminescent layer is blue light quantum
Point, hole transmission layer are one layer of NPB and one layer of MoO3, anode Al.Luminance test is carried out to comparative example, as a result as shown in Figure 4.
From fig. 4, it can be seen that the brightness of comparative example is significantly less than the inversion blue light quantum point in embodiment 1, embodiment 2 and embodiment 3
Membrane electro luminescent device.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (9)
1. one kind be inverted blue light quantum point membrane electro luminescent device, it is characterised in that including stack gradually substrate, negative electrode,
Electron transfer layer, blue light quantum point luminescent layer, hole transmission layer and anode；
The hole transmission layer includes the first hole transmission layer, the second hole transmission layer and the 3rd hole transport stacked gradually
Layer, first hole transmission layer directly contact with the blue light quantum point luminescent layer, the thickness of first hole transmission layer
For 5nm~10nm；
The material of first hole transmission layer is the mixture that the first hole mobile material and the second hole mobile material are formed,
The material of second hole transmission layer is the mixture that the second hole mobile material and the 3rd hole mobile material are formed, described
The material of 3rd hole transmission layer is the mixture that the 3rd hole mobile material and the 4th hole mobile material are formed；
The HOMO energy levels of first hole transmission layer are 6.04eV~6.8eV, the HOMO energy levels of second hole transmission layer
For 5.6eV~6.03eV, the HOMO energy levels of the 3rd hole transmission layer are 4.2eV~5.6eV, first hole transport
The HOMO energy levels of layer, second hole transmission layer and the 3rd hole transmission layer are sequentially reduced；
The thickness of first hole transmission layer, second hole transmission layer and the 3rd hole transmission layer increases successively；
3rd hole transmission layer directly contacts with the anode.
2. inversion blue light quantum point membrane electro luminescent device according to claim 1, it is characterised in that the blue light amount
The material of son point luminescent layer is selected from CdSe@ZnS core shell structure blue light quantum points or ZnCdS@ZnS core shell structure blue light quantum points,
Wherein ,@represents cladding, CdSe or the core that ZnCdS is the nuclear shell structure quantum point, and ZnS is the nuclear shell structure quantum point
Shell.
3. inversion blue light quantum point membrane electro luminescent device according to claim 1, it is characterised in that the blue light amount
The thickness of son point luminescent layer is 15nm~30nm.
4. inversion blue light quantum point membrane electro luminescent device according to claim 1, it is characterised in that described first is empty
Hole transport materials, second hole mobile material, the 3rd hole mobile material and the 4th hole mobile material
HOMO energy levels are sequentially reduced.
5. inversion blue light quantum point membrane electro luminescent device according to claim 1, it is characterised in that described first is empty
The mass ratio of first hole mobile material described in the transport layer of cave and second hole mobile material is 3:2~3:1, described
One hole mobile material is selected from 2- hydroxy-3-methyl -2- cyclopentene-1-ones and 6,6- bis- (4-9 hydrogen-carbazole -9- bases) phenyl) -6
One kind in hydrogen-pyrroles [3,2,1-de] acridine, second hole mobile material are selected from 4,4'- double (9H- carbazole -9- bases) connection
Benzene, (4- (9 hydrogen-carbazole -9- bases) phenyl) -8 hydrogen-indoles [3,2,1-de] acridines of 8,8- bis- and (9 hydrogen-carbazole -9- of 3,5- bis-
Base)-nitrogen, one kind in nitrogen-biphenyl ammonia.
6. inversion blue light quantum point membrane electro luminescent device according to claim 1, it is characterised in that described second is empty
The mass ratio of second hole mobile material described in the transport layer of cave and the 3rd hole mobile material is 3:4~3:2, described
Two hole mobile materials are selected from 4,4'- double (9H- carbazole -9- bases) biphenyl, 8,8- bis- (4- (9 hydrogen-carbazole -9- bases) phenyl) -8
Hydrogen-indoles [3,2,1-de] acridine and 3,5- bis- (9 hydrogen-carbazole -9- bases)-nitrogen, one kind in nitrogen-biphenyl ammonia, the described 3rd is empty
Hole transport materials are selected from N, N '-two (1- naphthyls)-N, N '-diphenyl -1,1 '-biphenyl -4-4 '-diamines and 2,2 ' two (3- diformazans
Base phenyl amino phenyl) one kind in 1,1 ' biphenyl.
7. inversion blue light quantum point membrane electro luminescent device according to claim 1, it is characterised in that the described 3rd is empty
The mass ratio of 3rd hole mobile material and the 4th hole mobile material described in the transport layer of cave is 2:3~1:1, described
Three hole mobile materials are selected from N, N '-two (1- naphthyls)-N, N '-diphenyl -1,1 '-biphenyl -4-4 '-diamines and 2,2 ' two (3-
Dimethyl benzene aminobenzene) one kind in 1,1 ' biphenyl, the 4th hole mobile material is selected from molybdenum trioxide, tungstic acid, oxygen
Change one kind in vanadium and titanium cyanines copper.
8. inversion blue light quantum point membrane electro luminescent device according to claim 1, it is characterised in that described second is empty
The thickness of cave transport layer is 10nm~20nm, and the thickness of the 3rd hole transmission layer is 20nm~30nm.
9. inversion blue light quantum point membrane electro luminescent device according to claim 1, it is characterised in that the anode choosing
One kind from aluminium, silver, gold and platinum.
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