CN105870272B - It is inverted blue light quantum point membrane electro luminescent device and preparation method thereof - Google Patents
It is inverted blue light quantum point membrane electro luminescent device and preparation method thereof Download PDFInfo
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- CN105870272B CN105870272B CN201610213098.8A CN201610213098A CN105870272B CN 105870272 B CN105870272 B CN 105870272B CN 201610213098 A CN201610213098 A CN 201610213098A CN 105870272 B CN105870272 B CN 105870272B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
The invention discloses a kind of inversion blue light quantum point membrane electro luminescent devices and preparation method thereof, including substrate, cathode, electron transfer layer, blue light quantum point luminescent layer, blue light energy transfer layer, hole transmission layer, hole injection layer and the anode stacked gradually；The thickness of the blue light quantum point luminescent layer is 15nm~30nm；The thickness of the blue light energy transfer layer is 0.2nm~2.5nm.This inversion blue light quantum point membrane electro luminescent device, the auxiliary layer formed as luminescent excitons using blue light energy transfer layer, so that blue light emitting exciton is other than the mode being directly injected into is formed, it can also be formed by way of energy transmission, blue light emitting exciton is reached after blue light energy transfer layer is formed by way of energy transmission again makes it shine on blue light quantum point luminescent layer, to solve the problems, such as that the hole injection barrier for being inverted blue light quantum point membrane electro luminescent device is higher.
Description
Technical field
The present invention relates to membrane electro luminescent device fields, more particularly to a kind of electroluminescent hair of inversion blue light quantum point film
Optical device and preparation method thereof.
Background technology
Quantum dot (quantumdots, QDs) is made of a limited number of atom, and three dimensions are in nanometer number
Magnitude.Quantum dot generally spherical shape or spherical is by semi-conducting material (usually by the A of II B~VI or the element A groups of III A~V
At) made of, stable diameter 2~20nm nano-particle.Quantum dot is the set of the atom and molecule on nanoscale
Body can be both made of a kind of semi-conducting material, such as by IIB.VIA races element (such as CdS, CdSe, CdTe, ZnSe) or
IIIA.VA races element (such as InP, InAs) forms, and can also be made of two or more semi-conducting material.As one
The novel semiconductor nano material of kind, quantum dot has many unique nanometer properties, and can apply electroluminescent as film
The luminescent layer of luminescent device.
However, since the common transparent anode ITO work functions of membrane electro luminescent device are 4.8eV, the HOMO with QDs
Energy level (>6.0eV) difference farther out, therefore causes in QLED devices that hole injection barrier is generally higher, needs high HOMO energy levels
Hole-injecting material helps the injection in hole, however current its HOMO energy level of common hole-injecting material is generally 5.2eV
~6.0eV, can meet substantially for feux rouges QDs (~6.0eV) hole injection requirement, however for green light QDs (~
6.5eV) and for blue light QDs (~6.8eV), since hole injection barrier is higher, it is difficult to meet the requirement of hole injection.
Invention content
Based on this, it is necessary to it is thin to provide a kind of inversion blue light quantum point that can solve the problems, such as that hole injection barrier is higher
Film electroluminescent device and preparation method thereof.
A kind of inversion blue light quantum point membrane electro luminescent device, including the substrate, cathode, the electron-transport that stack gradually
Layer, blue light quantum point luminescent layer, blue light energy transfer layer, hole transmission layer, hole injection layer and anode；
The material of the blue light quantum point luminescent layer is blue light quantum point, and the thickness of the blue light quantum point luminescent layer is
15nm~30nm；
The material of the blue light energy transfer layer is blue light organic luminescent material, and the thickness of the blue light energy transfer layer is
0.2nm~2.5nm.
In one embodiment, the blue light quantum point is the CdSe@ZnS blue light quantum points or nucleocapsid of nucleocapsid
ZnCdS@ZnS blue light quantum points, the grain sizes of the CdSe@ZnS blue light quantum points of the nucleocapsid is 3nm~6nm, the core
The grain size of the ZnCdS@ZnS blue light quantum points of shell structure is 8nm~15nm, wherein " CdSe@ZnS " is that ZnS coats CdSe,
" ZnCdS@ZnS " is that ZnS coats ZnCdS.
In one embodiment, the blue light organic luminescent material is selected from the distyrene radical derivative of amino substitution, four
Bromobenzene phenolphthalein ethyl ester sylvite, 4,4 '-(two (- 3 vinyl carbazole of 9- ethyls) -1,1 '-biphenyl and it is bis- (4,6- difluorophenyl pyridinato-N,
C2) pyridinecarboxylic closes at least one of iridium.
In one embodiment, the material of the cathode is ITO, FTO, AZO or IZO, and the thickness of the cathode is 80nm
~200nm.
In one embodiment, the material of the electron transfer layer is selected from least one of zinc oxide and titanium dioxide,
The thickness of the electron transfer layer is 30nm~50nm.
In one embodiment, the material of the hole transmission layer is selected from bis- (9- carbazole -9- bases) biphenyl of 4,4'-, N, N ' -
In two (1- naphthalenes)-N, N '-diphenyl -1,1 '-biphenyl -4-4 '-diamines and 2- hydroxy-3-methyl -2- cyclopentene-1-ones extremely
The thickness of few one kind, the hole transmission layer is 30nm~60nm.
In one embodiment, the material of the hole injection layer is selected from molybdenum trioxide, tungstic acid, vanadium oxide and titanium cyanines
The thickness of at least one of copper, the hole injection layer is 3nm~15nm.
In one embodiment, the material of the anode is aluminium, silver, gold or platinum, the thickness of the anode be 80nm~
150nm。
The preparation method of above-mentioned inversion blue light quantum point membrane electro luminescent device, includes the following steps：
Substrate is provided and the substrate is cleaned；
Cathode is formed in the substrate cleaned up；
Electron transfer layer and blue light quantum point luminescent layer are sequentially formed by solution spin-coating method on the cathode, wherein
The material of the blue light quantum point luminescent layer is blue light quantum point, the thickness of the blue light quantum point luminescent layer be 15nm~
30nm；And
Blue light energy transfer layer, hole transport are sequentially formed by vacuum vapour deposition on the blue light quantum point luminescent layer
Layer, hole injection layer and anode, wherein the material of the blue light energy transfer layer is blue light organic luminescent material, the blue light
The thickness of energy transmission layer is 0.2nm~2.5nm.
This inversion blue light quantum point membrane electro luminescent device is formed using blue light energy transfer layer as luminescent excitons
Auxiliary layer so that blue light emitting exciton can also be formed other than the mode being directly injected into is formed by way of energy transmission,
Blue light emitting exciton is arrived after blue light energy transfer layer is formed by the mode of energy transmission (ET, Energy Transfer) again
It is set to shine on up to blue light quantum point luminescent layer, to solve the hole note for being inverted blue light quantum point membrane electro luminescent device
Enter the higher problem of potential barrier.
Meanwhile the thickness of blue light energy transfer layer is 0.2nm~2.5nm, so that blue light energy transfer layer can not shape
At the strong luminescence of itself, the luminescent spectrum and its excitation purity of blue light quantum point membrane electro luminescent device are not influenced, is solved down
Set the higher problem of hole injection barrier of blue light quantum point membrane electro luminescent device.
Description of the drawings
Fig. 1 is the structural schematic diagram of the inversion blue light quantum point membrane electro luminescent device of an embodiment；
Fig. 2 is the flow chart of the preparation method of inversion blue light quantum point membrane electro luminescent device as shown in Figure 1；
Fig. 3 is 1~embodiment of embodiment 3 and comparative example inversion blue light quantum point membrane electro luminescent device obtained
Luminescent properties comparison diagram.
Specific implementation mode
Below mainly in combination with drawings and the specific embodiments to the preparation side of inversion blue light quantum point membrane electro luminescent device
Method is described in further detail.
The inversion blue light quantum point membrane electro luminescent device of an embodiment as shown in Figure 1, including stack gradually
Substrate 10, cathode 20, electron transfer layer 30, blue light quantum point luminescent layer 40, blue light energy transfer layer 50, hole transmission layer 60,
Hole injection layer 70 and anode 80.
Substrate 10 generally selects the higher glass of transmitance.
The material of cathode 20 is indium tin oxide (ITO), fluorine doped tin oxide (FTO), the zinc oxide (AZO) or indium-doped for mixing aluminium
Zinc oxide (IZO).
The thickness of cathode 20 is 80nm~200nm.
The material of electron transfer layer 30 is selected from zinc oxide (ZnO) and titanium dioxide (TiO2At least one of).
The thickness of electron transfer layer 30 is 20nm~50nm.
The material of blue light quantum point luminescent layer 40 is blue light quantum point.Preferably, blue light quantum point is nucleocapsid
The ZnCdS ZnS blue light quantum points of CdSe ZnS blue light quantum points or nucleocapsid, the CdSe ZnS blue light quantum of nucleocapsid
The grain size of point is 3nm~6nm, and the grain size of the ZnCdS@ZnS blue light quantum points of nucleocapsid is 8nm~15nm, wherein " CdSe@
ZnS " is that ZnS coats CdSe, and " ZnCdS@ZnS " is that ZnS coats ZnCdS.The CdSe@ZnS blue light quantum points and core of nucleocapsid
The ZnCdS@ZnS blue light quantum points of shell structure can be directly commercially available.
The thickness of blue light quantum point luminescent layer 40 is 15nm~30nm.
The material of blue light energy transfer layer 50 is blue light organic luminescent material, wherein the energy band of blue light energy transfer layer 50
Width be slightly above blue light quantum point luminescent layer 40 bandwidth or the two bandwidth it is close.Specifically, blue light is organic
Luminescent material is selected from BCzVB (the distyrene radical derivative of amino substitution), tetrabromophenolphthalein ethyl ester sylvite (TBPe), 4,4 '-
(two (- 3 vinyl carbazole of 9- ethyls) -1,1 '-biphenyl (BCzVBi) and bis- (4,6- difluorophenyl pyridinatos-N, C2) pyridinecarboxylics close
At least one of iridium (Firpic).
The thickness of blue light energy transfer layer 50 is 0.2nm~2.5nm, so that blue light energy transfer layer 50 can not be formed
The strong luminescence of itself does not influence the luminescent spectrum and excitation purity of blue light quantum point luminescent layer 40.
The material of hole transmission layer 60 is selected from bis- (9- carbazole -9- bases) biphenyl (CBP) of 4,4'-, N, N '-two (1- naphthalenes) -
In N, N '-diphenyl -1,1 '-biphenyl -4-4 '-diamines (NPB) and 2- hydroxy-3-methyl -2- cyclopentene-1-ones (mCP) extremely
Few one kind.
The thickness of hole transmission layer 60 is 30nm~60nm.
The material of hole injection layer 70 is selected from molybdenum trioxide (MoO3), tungstic acid (WO3), vanadium oxide (V2O5) and titanium cyanines
At least one of copper (CuPc).
The thickness of hole injection layer 70 is 3nm~15nm.
The material of anode 80 is the high-work-function metals such as aluminium (Al), silver-colored (Ag), golden (Au), platinum (Pt).
The thickness of anode 80 is 80nm~150nm.
This inversion blue light quantum point membrane electro luminescent device is used as blue light quantum point using blue light energy transfer layer 50
The auxiliary layer that 40 luminescent excitons of luminescent layer are formed so that blue light emitting exciton can also lead to other than the mode being directly injected into is formed
The mode for crossing energy transmission is formed, blue light emitting exciton blue light energy transfer layer 50 formation after by energy transmission (ET,
Energy Transfer) mode reach again make on blue light quantum point luminescent layer 40 its shine, to alleviate inversion blue light amount
The higher problem of hole injection barrier of son point membrane electro luminescent device.Meanwhile the thickness of blue light energy transfer layer 50 is
0.2nm~2.5nm does not influence blue light quantum point so that blue light energy transfer layer 50 can not form the strong luminescence of itself
The luminescent spectrum and its excitation purity of membrane electro luminescent device reach and solve to be inverted blue light quantum point membrane electro luminescent device
The higher problem of hole injection barrier.
The preparation method of above-mentioned inversion blue light quantum point membrane electro luminescent device as shown in Figure 2, includes the following steps：
S10, substrate 10 is provided and substrate 10 is cleaned.
Substrate 10 generally selects the higher glass of transmitance.
The operation cleaned to substrate 10 is：Detergent, acetone, ethyl alcohol and each ultrasound of isopropanol are used successively to substrate 10
Handle 15min.
S20, cathode 20 is formed in the substrate cleaned up that S10 is obtained.
The material of cathode 20 is indium tin oxide (ITO), fluorine doped tin oxide (FTO), the zinc oxide (AZO) or indium-doped for mixing aluminium
Zinc oxide (IZO).
The thickness of cathode 20 is 80nm~200nm.
It is formed in the operation of cathode 20 in the substrate cleaned up that S10 is obtained, the forming method of cathode 20 includes steaming
Plating, spraying plating, sputtering, electrochemistry hydatogenesis, electrochemical means etc., preferably sputter.
S20 further includes using successively at detergent, acetone, ethyl alcohol and each ultrasound of isopropanol being formed with the substrate 10 of cathode 20
15min is managed, then carries out the operation that UV-ozone makees 15min processing.
S30, electron transfer layer 30 and blue light quantum point sequentially formed by solution spin-coating method on the cathode 20 that S20 is formed
Luminescent layer 40.
The material of electron transfer layer 30 is selected from zinc oxide (ZnO) and titanium dioxide (TiO2At least one of).
The thickness of electron transfer layer 30 is 20nm~50nm.
The material of blue light quantum point luminescent layer 40 is blue light quantum point.Preferably, blue light quantum point is nucleocapsid
The ZnCdS ZnS blue light quantum points of CdSe ZnS blue light quantum points or nucleocapsid, the CdSe ZnS blue light quantum of nucleocapsid
The grain size of point is 3nm~6nm, and the grain size of the ZnCdS@ZnS blue light quantum points of nucleocapsid is 8nm~15nm, wherein " CdSe@
ZnS " is that ZnS coats CdSe, and " ZnCdS@ZnS " is that ZnS coats ZnCdS.The CdSe@ZnS blue light quantum points and core of nucleocapsid
The ZnCdS@ZnS blue light quantum points of shell structure can be directly commercially available.
The thickness of blue light quantum point luminescent layer 40 is 15nm~30nm.
S40, S30 formed blue light quantum point luminescent layer 40 on by vacuum vapour deposition sequentially form blue light energy transmit
Layer 50, hole transmission layer 60, hole injection layer 70 and anode 80.
The material of blue light energy transfer layer 50 is blue light organic luminescent material, wherein the energy band of blue light energy transfer layer 50
Width be slightly above blue light quantum point luminescent layer 40 bandwidth or the two bandwidth it is close.Specifically, blue light is organic
Luminescent material is selected from BCzVB (the distyrene radical derivative of amino substitution), tetrabromophenolphthalein ethyl ester sylvite (TBPe), 4,4 '-
(two (- 3 vinyl carbazole of 9- ethyls) -1,1 '-biphenyl (BCzVBi) and bis- (4,6- difluorophenyl pyridinatos-N, C2) pyridinecarboxylics close
At least one of iridium (Firpic).
The thickness of blue light energy transfer layer 50 is 0.2nm~2.5nm, so that blue light energy transfer layer 50 can not be formed
The strong luminescence of itself does not influence the luminescent spectrum and excitation purity of blue light quantum point luminescent layer 40.
The material of hole transmission layer 60 is selected from bis- (9- carbazole -9- bases) biphenyl (CBP) of 4,4'-, N, N '-two (1- naphthalenes) -
In N, N '-diphenyl -1,1 '-biphenyl -4-4 '-diamines (NPB) and 2- hydroxy-3-methyl -2- cyclopentene-1-ones (mCP) extremely
Few one kind.
The thickness of hole transmission layer 60 is 30nm~60nm.
The material of hole injection layer 70 is selected from molybdenum trioxide (MoO3), tungstic acid (WO3), vanadium oxide (V2O5) and titanium cyanines
At least one of copper (CuPc).
The thickness of hole injection layer 70 is 3nm~15nm.
The material of anode 80 is the high-work-function metals such as aluminium (Al), silver-colored (Ag), golden (Au), platinum (Pt).
The thickness of anode 80 is 80nm~150nm.
This preparation method for being inverted blue light quantum point membrane electro luminescent device, simple for process, operation facility, Ke Yishi
Preparation for being inverted blue light quantum point membrane electro luminescent device.
It is specific embodiment below.
Embodiment 1
Substrate of glass is respectively first ultrasonically treated 15min with detergent, acetone, ethyl alcohol and isopropanol successively.Then glass base
A layer thickness is sputtered on plate and is the ITO conductive films of 150nm, then is carried out UV-ozone and made 15min processing.
Then use solution spin-coating method in full of nitrogen and the extremely low glove box of water oxygen content, using the ZnO of 20mg/mL
Nano particle ethanol solution, prepares electron transfer layer, rotating speed 1500rpm, and anneal 30min, thickness 40nm at 150 DEG C.It
After prepare quantum dot light emitting layer, using the blue light CdSe ZnS quantum dot toluene solutions of 10mg/mL, rotating speed 2000rpm, 150 DEG C
Lower annealing 30min, thickness 20nm obtain semi-finished product.
It is 10 that semi-finished product, which are transferred to pressure, later-4In high vacuum cavity under Pa, the TBPe of vacuum evaporation 0.8nm successively
As blue light energy transfer layer, the CBP of 50nm is as hole transmission layer, the MoO of 8nm3As hole injection layer, finally it is deposited
The Al electrodes of 100nm obtain required inversion blue light quantum point membrane electro luminescent device as anode.
Embodiment 2
Substrate of glass is respectively first ultrasonically treated 15min with detergent, acetone, ethyl alcohol and isopropanol successively.Then glass base
A layer thickness is sputtered on plate and is the ITO conductive films of 150nm, then is carried out UV-ozone and made 15min processing.
Then use solution spin-coating method in full of nitrogen and the extremely low glove box of water oxygen content, using the ZnO of 20mg/mL
Nano particle ethanol solution, prepares electron transfer layer, rotating speed 3000rpm, and anneal 30min, thickness 30nm at 150 DEG C.It
After prepare quantum dot light emitting layer, using the blue light CdSe ZnS quantum dot toluene solutions of 10mg/mL, rotating speed 2000rpm, 150 DEG C
Lower annealing 30min, thickness 20nm obtain semi-finished product.
It is 10 that semi-finished product, which are transferred to pressure, later-4In high vacuum cavity under Pa, vacuum evaporation 1.5nm successively
BCzVB is as blue light energy transfer layer, and the CBP of 40nm is as hole transmission layer, the MoO of 8nm3As hole injection layer, finally
The Al electrodes of 100nm are deposited as anode, obtain required inversion blue light quantum point membrane electro luminescent device.
Embodiment 3
Substrate of glass is respectively first ultrasonically treated 15min with detergent, acetone, ethyl alcohol and isopropanol successively.Then glass base
A layer thickness is sputtered on plate and is the ITO conductive films of 150nm, then is carried out UV-ozone and made 15min processing.
Then use solution spin-coating method in full of nitrogen and the extremely low glove box of water oxygen content, using the ZnO of 20mg/mL
Nano particle ethanol solution, prepares electron transfer layer, rotating speed 1000rpm, and anneal 30min, thickness 50nm at 150 DEG C.It
After prepare quantum dot light emitting layer, using the blue light CdSe ZnS quantum dot toluene solutions of 10mg/mL, rotating speed 2000rpm, 150 DEG C
Lower annealing 30min, thickness 20nm obtain semi-finished product.
It is 10 that semi-finished product, which are transferred to pressure, later-4In high vacuum cavity under Pa, vacuum evaporation 0.3nm successively
Firpic is as blue light energy transfer layer, and the CBP of 60nm is as hole transmission layer, the MoO of 8nm3As hole injection layer, finally
The Al electrodes of 100nm are deposited as anode, obtain required inversion blue light quantum point membrane electro luminescent device.
Comparative example
The process that comparative example prepares inversion blue light quantum point membrane electro luminescent device is substantially the same manner as Example 1, uniquely
Difference lies in do not have blue light energy transfer layer in comparative example 3.
Inversion blue light quantum point membrane electro luminescent device obtained in Examples 1 to 3 and comparative example is carried out respectively
Shine test, obtains Fig. 3.
As seen from Figure 3, Examples 1 to 3 it is obtained be inverted blue light quantum point membrane electro luminescent device all have compared with
Good luminescent properties, and the Examples 1 to 3 luminescent properties obtained for being inverted blue light quantum point membrane electro luminescent device are apparent
Higher than than being inverted blue light quantum point membrane electro luminescent device made from comparative example.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
Cannot the limitation to the scope of the claims of the present invention therefore be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (7)
1. a kind of inversion blue light quantum point membrane electro luminescent device, which is characterized in that including stack gradually substrate, cathode,
Electron transfer layer, blue light quantum point luminescent layer, blue light energy transfer layer, hole transmission layer, hole injection layer and anode；
The material of the blue light quantum point luminescent layer is blue light quantum point, and the blue light quantum point is the CdSe@ZnS of nucleocapsid
The ZnCdS@ZnS blue light quantum points of blue light quantum point or nucleocapsid, the CdSe@ZnS blue light quantum points of the nucleocapsid
Grain size is 3nm~6nm, and the grain size of the ZnCdS@ZnS blue light quantum points of the nucleocapsid is 8nm~15nm, wherein " CdSe@
ZnS " is that ZnS coats CdSe, and " ZnCdS@ZnS " is that ZnS coats ZnCdS, and the thickness of the blue light quantum point luminescent layer is 15nm
~30nm；
The material of the blue light energy transfer layer is blue light organic luminescent material, and the blue light organic luminescent material takes selected from amino
Distyrene radical derivative, tetrabromophenolphthalein ethyl ester sylvite, 4,4 '-(two (- 3 vinyl carbazole of 9- ethyls)-the 1,1 '-biphenyl in generation
At least one of iridium, the thickness of the blue light energy transfer layer are closed with bis- (4,6- difluorophenyl pyridinato-N, C2) pyridinecarboxylics
For 0.2nm~2.5nm.
2. inversion blue light quantum point membrane electro luminescent device according to claim 1, which is characterized in that the cathode
Material is ITO, FTO, AZO or IZO, and the thickness of the cathode is 80nm~200nm.
3. inversion blue light quantum point membrane electro luminescent device according to claim 1, which is characterized in that the electronics passes
The material of defeated layer is selected from least one of zinc oxide and titanium dioxide, and the thickness of the electron transfer layer is 30nm~50nm.
4. inversion blue light quantum point membrane electro luminescent device according to claim 1, which is characterized in that the hole passes
The material of defeated layer is selected from bis- (9- carbazole -9- bases) biphenyl of 4,4'-, N, N '-two (1- naphthalenes)-N, N '-diphenyl -1,1 '-biphenyl -
The thickness of at least one of 4-4 '-diamines and 2- hydroxy-3-methyl -2- cyclopentene-1-ones, the hole transmission layer is 30nm
~60nm.
5. inversion blue light quantum point membrane electro luminescent device according to claim 1, which is characterized in that the hole note
The material for entering layer is selected from least one of molybdenum trioxide, tungstic acid, vanadium oxide and titanium cyanines copper, the thickness of the hole injection layer
Degree is 3nm~15nm.
6. inversion blue light quantum point membrane electro luminescent device according to claim 1, which is characterized in that the anode
Material is aluminium, silver, gold or platinum, and the thickness of the anode is 80nm~150nm.
7. according to the preparation method according to any one of claims 1 to 6 for being inverted blue light quantum point membrane electro luminescent device,
It is characterised in that it includes following steps：
Substrate is provided and the substrate is cleaned；
Cathode is formed in the substrate cleaned up；
Electron transfer layer and blue light quantum point luminescent layer are sequentially formed by solution spin-coating method on the cathode, wherein described
The material of blue light quantum point luminescent layer is blue light quantum point, and the thickness of the blue light quantum point luminescent layer is 15nm~30nm；With
And
On the blue light quantum point luminescent layer by vacuum vapour deposition sequentially form blue light energy transfer layer, hole transmission layer,
Hole injection layer and anode, wherein the material of the blue light energy transfer layer is blue light organic luminescent material, the blue light energy
The thickness of transfer layer is 0.2nm~2.5nm.
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| CN105280829A (en) * | 2015-09-17 | 2016-01-27 | Tcl集团股份有限公司 | Qled and preparation method thereof |
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|---|---|---|---|---|
| CN101009349A (en) * | 2006-12-12 | 2007-08-01 | 天津理工大学 | Flexible quanta polymer white light EL part and its making method |
| CN101889480A (en) * | 2007-10-16 | 2010-11-17 | Hcf合伙人股份两合公司 | Organic light-emitting diodes with electrophosphorescent-coated emissive quantum dots |
| CN105280829A (en) * | 2015-09-17 | 2016-01-27 | Tcl集团股份有限公司 | Qled and preparation method thereof |
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