CN105814664B - Reaction induced unit, substrate board treatment and membrane deposition method - Google Patents
Reaction induced unit, substrate board treatment and membrane deposition method Download PDFInfo
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- CN105814664B CN105814664B CN201480061659.6A CN201480061659A CN105814664B CN 105814664 B CN105814664 B CN 105814664B CN 201480061659 A CN201480061659 A CN 201480061659A CN 105814664 B CN105814664 B CN 105814664B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Organic Chemistry (AREA)
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- Formation Of Insulating Films (AREA)
Abstract
The present invention provides a kind of substrate board treatment.Substrate board treatment of the invention includes: process cavity, substrate pedestal, it is set to the process cavity, multiple substrates are placed on same level, it is connected with rotary shaft and is rotated, heater member, bottom surface and reaction induced unit positioned at the substrate pedestal, for spraying gas to the process face of substrate with each corresponding position for the multiple substrates for being placed in the substrate pedestal；Reaction induced unit flow path with multi-layer compound structure by least three plates of lamination.
Description
Technical field
The present invention relates to substrate board treatments, more particularly, to a kind of gas that can be easily implemented and spray to substrate
Temperature, pressure and the reaction induced unit of the control in reaction time and the substrate board treatment with the reaction induced unit
And membrane deposition method.
Background technique
In the deposition process of manufacture semiconductor element, in order to improve the formation degree (conformability) of deposition film quality
And reactive deposition is carried out with presoma (precursor) using the reaction product of two or more gas in a system
When, because can not or temperature not easy to control, pressure, gas rate (Gas Ratio), reaction time (Reaction Time), based on use
In producing on a small quantity for the narrow processing range (narrow process window) or reaction product that meets reaction condition
It bad membrane quality (Bad film quality) and is not easy to be supplied uniformly across reactant in conjunction with (Recombination),
And load effect (loading Effect) thus occurs.
Summary of the invention
Technical problem
The purpose of the present invention is to provide a kind of reaction induced unit and the processing substrate with the reaction induced unit
Device and membrane deposition method can when carrying out reactive deposition using two or more gas reaction product and presoma
Easily realize temperature, pressure and the control in reaction time.
The purpose of the present invention is to provide a kind of reaction induced unit and the processing substrate with the reaction induced unit
Device and membrane deposition method react two or more gas in inside, generate so as to be supplied uniformly across reaction
Object.
It's not limited to that for the technical problems to be solved by the invention, and those skilled in the art can pass through record below
It is expressly understood that the other technologies problem not being mentioned to.
Technical solution
A mode of the invention provides a kind of substrate board treatment comprising: process cavity, substrate pedestal are set to institute
Process cavity is stated, multiple substrates are placed on same level, is connected with rotary shaft and is rotated, heater member, position
Bottom surface and reaction induced unit in the substrate pedestal, for multiple substrates for being placed in the substrate pedestal
Gas is sprayed to the process face of substrate in each corresponding position；At least three plates of the reaction induced unit based on lamination and have
There is the flow path of multi-layer compound structure.
Also, the reaction induced unit can include: top plate has at least one gas injection port；Middle plate, lamination are set
It is placed in the lower section of the top plate, there is a flow path of mixing and the heating for gas and for making via a flow path
Discharged first through hole of gas；And bottom plate, lamination are set to the lower section of the middle plate, have and pass through institute for adjusting
State the pressure and the secondary flow path in reaction time of the gas of the first through hole inflow.
Also, the middle plate may be provided at least one.
Also, the reaction induced unit can further include: nozzle is set to the bottom plate, is connected with the secondary flow path
It connects, for spraying the gas via the secondary flow path on substrate.
Also, the nozzle can detachably be set to the slot that the center of the bottom plate is formed, in the spray
The bottom surface of mouth has multiple spray-holes, and has in the side of the nozzle and be connected with the end of the secondary flow path
Slot.
Also, in the middle plate, a flow path can be formed from the center of the middle plate towards edge, described first
Through hole is formed in the end of a flow path.
Also, in the bottom plate, the secondary flow path can be formed from the edge of the bottom plate towards center.
Also, one end of the secondary flow path can be connected with first through hole, and the other end is connected with the nozzle
It connects.
Also, the independent path that the secondary flow path can have length, circle (turn) number mutually different.
Also, the middle plate can have nave portion in center, be connected with the primary stream in the nave portion
Road, gas flow into the nave portion by the gas injection port.
Also, a flow path can be provided by partition wall, and the secondary flow path can be provided by flute profile state.
Also, the length of the secondary flow path can be longer than the length of a flow path.
A mode of the invention provides a kind of reaction induced unit comprising: top plate has at least one gas injection end
Mouthful；Middle plate, lamination are set to the lower section of the top plate, have a flow path of mixing and the heating for gas and make via institute
State discharged first through hole of gas of a flow path；At least one bottom plate, lamination are set to the lower section of the middle plate, have
For adjusting the pressure and the secondary flow path in reaction time of the gas flowed by first through hole；And nozzle, setting
In the bottom plate, it is connected with the secondary flow path, for spraying the gas via the secondary flow path on substrate.
Also, the nozzle can detachably be set to the slot that the center of the bottom plate is formed, in the spray
The bottom surface of mouth has multiple spray-holes, and has in the side of the nozzle and be connected with the end of the secondary flow path
Slot.
Also, in the middle plate, a flow path can be formed from the center of the middle plate towards edge, described first
Through hole is formed in the end of a flow path, and in the bottom plate, the secondary flow path can be from the edge court of the bottom plate
It is formed to center.
Also, the middle plate can have nave portion in center, be connected with the primary stream in the nave portion
Road, gas flow into the nave portion by the gas injection port.
Also, a flow path can be provided by partition wall, and the Secondary Flow routes flute profile state to provide.
The membrane deposition method of the embodiment of the present invention, for the deposition film in the cavity for being divided into multiple regions,
Comprising: which first step, provides the first presoma on the first substrate, the second presoma in the second substrate is cleaned and aspirated
A part provides third free radical to form third film, described in cleaning and suction on the third presoma on third substrate
Remaining 4th free radical on 4th film of tetrabasal；Second step cleans and aspirates described the of the first substrate
A part of one presoma, it is thin to form second on second presoma of the second substrate to provide the second free radical
The remaining third free radical on film, cleaning and suction third substrate, on the 4th free radical of the tetrabasal
4th presoma is provided；Third step provides the first free radical on first presoma of the first substrate to be formed
The first film cleans and aspirates remaining second free radical in the second substrate, provides institute on the third substrate
Third presoma is stated, a part of the 4th presoma on the tetrabasal is cleaned and aspirate；And four steps, cleaning and
Remaining first free radical on the first substrate is aspirated, provides second presoma on the second substrate, clearly
Wash and aspirate a part of the third presoma on the third substrate, the 4th forerunner on the tetrabasal
The 4th free radical is provided on body to form the 4th film.
In an example of the invention, the first step to the four steps can execute at 500 DEG C.
First to fourth presoma may include silane, and first to fourth free radical may include hydroxyl.
Another membrane deposition method of the invention comprising: first step, while on the first substrate in substrate
It forms the first presoma and forms the second free radical on the second presoma of the second substrate, thus shape on the second substrate
At the second film；And second step, while provided on first presoma in the substrate the first free radical and
The second presoma is provided on second film, to form the first film on the first substrate.
Technical effect
According to an embodiment of the invention, providing pressure, reaction time and the temperature for being suitable for two or more gas reactions
Degree condition, induced reaction with ensure broad processing range and make reaction product in conjunction with reaching minimum, so as to change
Kind membrane quality and load effect (loading Effect).
As described above, the membrane deposition method of the embodiment of the present invention can be in the cavity of 520 DEG C of stationary temperature
First to fourth film is formed on first to fourth substrate of moving in rotation, so as to prevent load effect and improve production effect
Rate.
Detailed description of the invention
Fig. 1 is the figure for illustrating substrate board treatment of the invention.
Fig. 2 is the perspective view of substrate pedestal shown in FIG. 1.
Fig. 3 is the rearview of reaction induced unit shown in FIG. 1.
Fig. 4 is the perspective view of reaction induced unit.
Fig. 5 is the exploded perspective view of reaction induced unit.
Fig. 6 is the sectional view of reaction induced unit.
Fig. 7 is the top view for showing the nozzle for being set to bottom plate.
Fig. 8 is the figure for showing the plate for being formed with refrigerant flow path.
Fig. 9 is the flow chart for showing the membrane deposition method in the substrate board treatment of Fig. 1.
Figure 10 is the top view for showing the process cavity of Fig. 1.
Figure 11 is the perspective view for showing the pedestal and first to fourth workbench of Fig. 1.
Figure 12 is the figure for comparing the formation of silicon oxide layer of the silicon oxide layer and the prior art that show first to fourth film
Table.
Figure 13 is the wet etching rate for comparing the silicon oxide layer for showing first to fourth film and general silicon oxide layer
The chart of wet etching rate.
Specific embodiment
A preferred embodiment of the present invention is described in detail referring to the drawings.Reality relevant to attached drawing can be passed through
It applies example and is readily appreciated that the technical problems to be solved by the invention, technical solution and technical effect.In order to clearly be illustrated, respectively
A part in attached drawing is shown by simple or exaggeration.When the structural detail to each attached drawing assigns appended drawing reference, even showing
In mutually different attached drawing, identical appended drawing reference will be assigned as far as possible for identical structural detail.Also, to the present invention
When being illustrated, if it is determined that technical idea of the invention can be obscured to relevant known features or illustrating for function,
Then it is omitted from detailed description thereof.
(embodiment)
Fig. 1 is the figure for illustrating substrate board treatment of the invention.Fig. 2 is the perspective view of substrate pedestal shown in FIG. 1.
Referring to Fig.1, the substrate board treatment 10 of the embodiment of the present invention includes: process cavity (process chamber)
100, as the substrate pedestal 200, reaction induced unit 300 and supply member of substrate support member (support member)
400。
Process cavity 100 is provided with inlet and outlet 112 in side.Inlet and outlet 112 are passed in and out when carrying out technique for substrate W.
Although not shown, process cavity 100 can provide exhaust passage at edge, be used to be discharged the reaction gas supplied to process cavity
And the reaction dispersion generated in depositing operation.As an example, exhaust passage can be by the annular positioned at the outside of substrate pedestal 200
Shape is constituted.
Referring to FIG. 1 and FIG. 2, substrate pedestal 200 is set to the inner space of process cavity 100.As an example, substrate pedestal
200 are made of the Configuration Type for placing four substrates.Substrate pedestal is made of disc-shape, and is formed with upper part face and is placed base
First to fourth workbench 212a-212d of plate.Set on substrate pedestal first to fourth workbench 212a-212d can by with base
The similar round composition of the shape of plate.First to fourth workbench 212a-212d centered on the center of substrate pedestal 200,
By 90 degree of interval configurations on concentric circles.As an example, the number of the workbench of substrate pedestal 200 can be three or four with
On, rather than four.
Substrate pedestal 200 is rotated using the driving portion 290 being connected with rotary shaft 280.For rotary plate pedestal
Stepper motor is preferably used in 200 driving portion 290, is provided with the revolution and rotation speed that can control driving motor
Encoder.
Although not shown, substrate pedestal 200 can be equipped with multiple promotions for substrate W to be promoted and declined on each workbench
It sells (not shown).Lift pin (lift pin) makes workbench quilt of the substrate W from substrate pedestal 200 by promoting and declining substrate W
Separate or be placed in workbench.
Referring to Fig.1, supply member 400 may include the first air delivery member 410a and the second air delivery member 410b.First gas supply
Each supply from component 410a to four reaction induced units on substrate W formed as defined in film the first reaction gas
Body, each supply second reaction gas of the second air delivery member 410b to four reaction induced units.In the present embodiment, in order to
Two mutually different reaction gas of supply and used two air delivery members, still, according to the characteristic of the gas supplied,
Multiple air delivery members can be used, to supply more than two mutually different gases or identical gas.
Fig. 3 is the rearview of reaction induced unit shown in FIG. 1.
As shown in Figure 1 to Figure 3, four reaction induced units 300 are to each of four substrates for being placed in substrate pedestal 200
Spray gas.Reaction induced unit 300 can receive at least one reaction gas supplied from supply member.Reaction gas can be outside
Portion is preheated treatment and supplied to reaction induced unit 300.According to an example, each reaction induced unit 300 be can receive from supply
The first, second reaction gas that component 400 supplies.Four reaction induced units 300 have disc-shape on the whole, are respectively in
It is spaced the fan shape of zoning by 90 degree, is formed with gas ejection ports 312 in bottom surface.
For example, reaction induced unit 300 in 90 degree be spaced fan shapes, but the present invention is not limited to this, according to
Technique purpose or characteristic also may make up 45 degree of intervals or 180 degree interval, according to reaction cavity form, also can be changed reaction induced
Cell size, form and setting position.
Fig. 4 and Fig. 5 is the perspective view and exploded perspective view of reaction induced unit, and Fig. 6 is the sectional view of reaction induced unit,
Fig. 7 is the top view for showing the nozzle for being set to bottom plate.
As shown in Figures 4 to 7, reaction induced unit 300 provides multi-layer compound structure based at least three plates of lamination
Flow path.In the present embodiment, it is illustrated for the multi-layer compound structure by lamination there are three plate.But this only belongs to
The number of an example, plate is also possible to two or four or more.
Reaction induced unit 300 includes top plate 310, middle plate 320, bottom plate 330 and nozzle 350, top plate 310, middle plate 320
And in turn lamination is arranged bottom plate 330.
There are three injection ports 312,314 for the tool of top plate 310.Two injection ports 312 are the gas for injecting reaction gas
Body injection port, another injection port 314 are the pressure ports for checking the pressure inside reaction induced unit 300.
Middle 320 lamination of plate is set to 310 lower section of top plate.Middle plate 320 includes: the primary stream of mixing and the heating for gas
Road 322；And first through hole 324, for make the gas for being mixed and heating during via flow path 322 to
The secondary flow path 332 of bottom plate 330 flows.
Flow path includes the nave portion 328 of therefrom plate towards extrorse four flow paths, and the first through hole 324 is formed
In the end of each flow path.One time flow path is provided by partition wall 326.Nave portion 328 is the center for being located at middle plate, and makes gas
The space that body is flowed by the gas injection port of top plate, is connected with four flow paths.
In the present embodiment, carried out so that middle plate 320 is provided with one between top plate 310 and bottom plate 330 as an example diagram and
Illustrate, but this is only to belong to an example, according to the number of the gas supplied, characteristic, adjusted to carry out gas mixing and temperature,
Can lamination be provided with the variant more than one plate of the form of flow path, length, and mutually different gas is supplied to the plate of lamination
Body or identical gas.
330 lamination of bottom plate is set to middle 320 lower section of plate.There are four secondary flow paths 332 for the tool of bottom plate 330, are used to adjust logical
Spend pressure and the reaction time of the gas of four the first through holes 324 inflow.The gas that therefrom plate 320 provides is passing through four two
Pressure and reaction time are adjusted during secondary flow path 332.For example, secondary flow path can be passed through when gas pressure is lower
Volume-diminished, circle (turn) count increase, length increase, shape change etc. to improve the gas pressure in secondary flow path.With this phase
Instead, when gas pressure is higher, it can be expanded by the volume of secondary flow path, enclose number reduction, length reduction, shape change etc. to drop
Gas pressure in low secondary flow path.The reaction gas for meeting reaction time and pressure in secondary flow path as a result, is supplied to spray
Mouth.
Secondary flow path 332 is formed from the edge of bottom plate 330 towards center.One end of secondary flow path 332 is passed through with middle plate 320
Through-hole 324 is connected, and the other end is connected with the nozzle 350 for being set to 330 center of bottom plate.
Secondary flow path 332 can provide as flute profile state.In addition, secondary flow path 332 is characterized in that length is longer than primary stream
The length on road 322.Secondary flow path 332 can provide independent path (path) form mutually different for its length, circle number.
Nozzle 350 is set to bottom plate 330.Nozzle 350 is connected with four secondary flow paths 332, and will be via secondary flow path
332 gas is sprayed on substrate.Nozzle 350 is detachably set to the slot 338 that the center of bottom plate 330 is formed.
Nozzle 350 has multiple spray-holes 352 in bottom surface, and has in two sides and be connected with the end 335 of secondary flow path 332
Slot 354.
In reaction induced unit 300, reaction gas is during via a flow path or secondary flow path, it can be achieved that base
In the thermally conductive preheating of inside cavity.
Fig. 8 is the figure for showing the plate for being formed with refrigerant flow path.
As shown in figure 8, in the present embodiment, in the plate 380 for constituting reaction induced unit, can have reaction gas with flowing
The flow path 382 of body, which is adjacent to, is formed with refrigerant flow path 384.Circulation has from external refrigerant and supplies in refrigerant flow path 384
The refrigerant that device 900 provides, so that the gas flowed in flow path is cooled down.Such refrigerant flow path 384 can be formed
In on the middle plate 320 or bottom plate 330 of reaction induced unit 300 shown in Fig. 4.
Fig. 9 is the flow chart for showing the membrane deposition method in the substrate board treatment of Fig. 1.Figure 10 is the work for showing Fig. 1
The top view of skill cavity 100.Figure 11 is the perspective view for showing the pedestal and first to fourth workbench of Fig. 1.
Referring to Fig.1 and Fig. 9 to Figure 11, the first presoma is provided on first substrate 101, aspirate (pumping) and is cleaned
(purging) a part of the second presoma in the second substrate 102 provides on the third presoma on third substrate 103
Remaining 4th free radical (step S10) on third free radical, suction and cleaning tetrabasal 104.
Substrate board treatment 10 includes: process cavity 100, substrate pedestal 200, reaction induced unit 300 and supply structure
Part 400.Process cavity 100 can have first to fourth region 110-140.According to an example, first to fourth region 110-140 can
It is presoma forming region, presoma suction areas, free radical forming region and free radical suction areas respectively.For example, work
Skill cavity 100 can 520 DEG C to 550 DEG C at a temperature of execute the atom layer deposition process of first to fourth substrate 101-104.Base
Plate pedestal 200 is configurable in process cavity 100.Supply member 400 can provide respectively presoma and freedom to process cavity 100
Base.Supply member 400 may include presoma supply line 410a and free radical supply line 410b.Presoma supply line 410a can be with
One region 110 is connected.Free radical supply line 410b can be connected with third region 130.According to an example, reaction induced unit
300 are configurable in first area 110 and third region 130.It can be to first to fourth substrate 101-104 in first area 110
First to fourth presoma is provided.First to fourth can be provided first to fourth substrate 101-104 in third region 130 freely
Base (radical).It, can be in first to fourth substrate using the reaction of first to fourth presoma and first to fourth free radical
First to fourth film is formed on 101-104.Reaction induced unit 300 may include spray head (shower head).
Substrate pedestal 200 can be rotated in process cavity 100.Substrate pedestal 200 can include: axis 280；The axis
First to fourth workbench 212a-212d on 280.First to fourth workbench 212a-212d can support first to respectively
Tetrabasal 101-104.First to fourth workbench 212a-212d can be moved along first to fourth region 110-140.For example,
First to fourth substrate 101-104 can be arranged respectively in first to fourth region 110-140.
The first presoma can be formed on the first substrate 101 in first area 110.First presoma can be formed in
Before one substrate 101.The second presoma in the second substrate 101 in second area 120 can press quilt using defined vacuum
Suction.Also, purge gas can be provided in the second substrate 102.It can be in the third of the third substrate 103 in third region 130
Third free radical is provided on presoma.Wherein, it first is formed on first to third substrate 101-103 to third presoma
The presoma of identical type may include silane SiH4Or titanium chloride TiCl4.Third free radical may include hydroxyl OH or amido
NH.Third presoma and third free radical can be reacted.For example, silicon oxide layer, silicon nitridation can be formed on third substrate 103
The third film of film or titanium nitride TiN, and gas is formed after carrying out the reaction of hydrochloric acid HCl.Gas with the fourth region 140 in
Remaining 4th free radical can be sucked after being reacted on tetrabasal 104.It can provide purge gas on tetrabasal 104.
Before this, although not shown, the 4th presoma and the 4th free radical can be provided on tetrabasal 104 to form the 4th film.
4th free radical can be identical.
In addition, the first workbench 212a can be mobile towards second area 120 using the rotation of axis 280, the second workbench
212b is mobile towards third region 130, and third workbench 212c is mobile towards the fourth region 140, and the 4th workbench 212d is towards the firstth area
Domain 110 is mobile.First to fourth substrate 101-104 can be in turn mobile towards first to fourth region 110-140.Therefore, can
The technique waiting time of first to fourth substrate 101-104 is set to reach minimum.The load effect of first to fourth substrate 101 can quilt
It eliminates or avoids.Therefore, the film forming method of the embodiment of the present invention can be improved production efficiency.
Then, aspirate and clean a part of the first presoma on first substrate 101, the institute in the second substrate 102
It states and the second free radical is provided on the second presoma, remaining third free radical in suction and cleaning third substrate 103, in the 4th base
4th presoma (step S20) is provided on plate 104.The adsorbable surface in first substrate 101 of first presoma.It is unadsorbed in
First presoma on the surface of one substrate 101 can be sucked discharge, or cleaned using purge gas.Utilize the second presoma
And second free radical reaction, the second film can be formed in the second substrate 102.Second film may include silicon oxide layer, silicon nitrogen
Change film or titanium nitride.Third free radical on third substrate 103 can be arranged out of process cavity 100 using suction or cleaning
Out.4th presoma can be identical to third presoma as first.
Then, the first workbench 212a can be mobile towards third region 130, and the second workbench 212b is moved towards the fourth region 140
Dynamic, third workbench 212c is mobile towards first area 110, and the 4th workbench 212d is mobile towards second area 120.
Then, the first free radical, suction and cleaning the second substrate 102 are provided on the first presoma of first substrate 101
Upper remaining second free radical, provides third presoma on the third free radical of third substrate 103, aspirates tetrabasal 104
On the 4th presoma a part (step S30).In first substrate 101, using the first presoma and the first free radical
Reaction and form the first film.The first film may include silicon oxide layer, silicon nitride film or titanium nitride.In the second substrate 102
Second free radical can be discharged using suction or cleaning to the external of process cavity 100.Third presoma is adsorbable in third base
On plate 103.4th presoma on the unadsorbed surface in tetrabasal 104 can be removed using suction or cleaning.
Then, the first workbench 212a can be mobile towards third region 130, and the second workbench 212b is moved towards the fourth region 140
Dynamic, third workbench 212c is mobile towards first area 110, and the 4th workbench 212d is mobile towards second area 120.
The first free radical on first substrate 101 is aspirated and cleaned, is provided on the second free radical in the second substrate 102
A part of second presoma, suction and the third presoma on cleaning third substrate 103, the on tetrabasal 104 the 4th
4th free radical (step S40) is provided on presoma.Remaining first free radical can utilize suction or cleaning on first substrate 101
And it is removed out of process cavity 100.Second presoma is adsorbable on the second film or the second substrate 102.It is unadsorbed in
The third presoma of two films or third substrate 103 can be removed out of process cavity 100 using suction or cleaning.It is adsorbed in
The third presoma of second film or third substrate 103 can remain on third substrate 103.4th presoma and the 4th free radical
The 4th film can be formed on tetrabasal 104.
In addition, first to fourth substrate 101-104 can in turn be moved along first to fourth region 110-140, and
First to fourth film of specific thickness is formed on first to fourth substrate 101-104.
Figure 12 is the figure for comparing the formation of silicon oxide layer of the silicon oxide layer and the prior art that show first to fourth film
Table.Horizontal axis indicates temperature, and the longitudinal axis indicates that silicon oxide layer forms ratio.
Referring to Fig.1 2, the silicon oxide layer 10 of first to fourth film can be formed at 520 DEG C.On the other hand, the prior art
Silicon oxide layer 20 can be formed at 570 DEG C.
Figure 13 is the wet etching rate for comparing the silicon oxide layer 10 for showing first to fourth film and general silicon oxide layer
Wet etching rate chart.
Referring to Fig.1 3, the wet etching rate of the silicon oxide layer of first to fourth film can be wet lower than general silicon oxide layer
Formula rate of etch.The difference of wet etching rate can the density based on silicon oxide layer and occur.Low density general silicon oxide layer with
The silicon oxide layer of the silicon oxide layer of first to fourth high film of density is compared, and can have high wet etching rate.Therefore, this hair
The membrane deposition method of bright embodiment is the method for being used to form highdensity silicon oxide layer.
The above is only technical idea of the invention, the those of ordinary skill of technical field belonging to the present invention has been illustrated
A variety of modification and deformation can be carried out in the range of without departing substantially from substantive characteristics of the invention.Therefore, the implementation disclosed in the present invention
Example is only for illustrating the present invention, and is not intended to and limits technical idea of the invention, and the range of technical idea of the invention is simultaneously
It is not limited to such embodiment.Protection scope of the present invention should be defined by appended claims, be equal with it
All technical ideas in range should be considered as falling into interest field of the invention.
Claims (18)
1. a kind of substrate board treatment characterized by comprising
Process cavity,
Substrate pedestal, is set to the process cavity, and multiple substrates are placed on same level, is connected with rotary shaft and goes forward side by side
Row rotation,
Heater member, positioned at the bottom surface of the substrate pedestal, and
Reaction induced unit, for each corresponding position for the multiple substrates for being placed in the substrate pedestal to substrate
Process face sprays gas；
The reaction induced unit includes:
Top plate has at least one gas injection port,
Middle plate, lamination are set to the lower section of the top plate, have a flow path of mixing and the heating for gas and for making
Via discharged first through hole of the gas of a flow path,
Bottom plate, lamination are set to the lower section of the middle plate, have for adjusting the gas flowed by first through hole
The secondary flow path in pressure and reaction time, and
Nozzle is set to the bottom plate, is connected with the secondary flow path, for spraying on substrate via the secondary flow path
Gas；
Flow path includes multiple flow paths from the center of the middle plate towards the edge of the middle plate, first perforation
Hole is formed in the end of each flow path,
The secondary flow path is formed with multiple flow paths, each Secondary Flow from the edge of the bottom plate towards the center of the bottom plate
The one end on road is connected with first through hole of the middle plate, the spray of the other end and the center for being set to the bottom plate
Mouth is connected.
2. substrate board treatment according to claim 1, which is characterized in that the middle plate is provided at least one.
3. substrate board treatment according to claim 1, which is characterized in that the nozzle is detachably set to
The slot that the center of the bottom plate is formed has multiple spray-holes in the bottom surface of the nozzle, and in the side of the nozzle
With the slot being connected with the end of the secondary flow path.
4. substrate board treatment according to claim 1, which is characterized in that in the middle plate, a flow path from
The center of the middle plate is formed towards edge, and first through hole is formed in the end of a flow path.
5. substrate board treatment according to claim 1, which is characterized in that in the bottom plate, the secondary flow path from
The edge of the bottom plate is formed towards center.
6. substrate board treatment according to claim 1, which is characterized in that one end of the secondary flow path and described first
Through hole is connected, and the other end is connected with the nozzle.
7. substrate board treatment according to claim 1, which is characterized in that the secondary flow path has length, circle number phase
Mutually different independent path.
8. substrate board treatment according to claim 1, which is characterized in that the middle plate has nave in center
Portion, is connected with a flow path in the nave portion, and it is wide that gas by the gas injection port flows into the center
Field portion.
9. substrate board treatment according to claim 1, which is characterized in that a flow path is provided by partition wall.
10. substrate board treatment according to claim 1, which is characterized in that the Secondary Flow routes flute profile state to provide.
11. substrate board treatment according to claim 1, the length of the secondary flow path is longer than the length of a flow path
Degree.
12. a kind of reaction induced unit characterized by comprising
Top plate has at least one gas injection port,
Middle plate, lamination are set to the lower section of the top plate, have for gas mixing and heating a flow path and make via
Discharged first through hole of the gas of flow path,
At least one bottom plate, lamination are set to the lower section of the middle plate, have and are flowed into for adjusting by first through hole
Gas pressure and the secondary flow path in reaction time, and
Nozzle is set to the bottom plate, is connected with the secondary flow path, for spraying on substrate via the secondary flow path
Gas；
Flow path includes multiple flow paths from the center of the middle plate towards the edge of the middle plate, first perforation
Hole is formed in the end of each flow path,
The secondary flow path is formed with multiple flow paths, each Secondary Flow from the edge of the bottom plate towards the center of the bottom plate
The one end on road is connected with first through hole of the middle plate, the spray of the other end and the center for being set to the bottom plate
Mouth is connected.
13. reaction induced unit according to claim 12, which is characterized in that the nozzle is detachably arranged
In the slot that the center of the bottom plate is formed, there are multiple spray-holes in the bottom surface of the nozzle, and in the side of the nozzle
Face has the slot being connected with the end of the secondary flow path.
14. reaction induced unit according to claim 12, which is characterized in that in the middle plate, a flow path
It is formed from the center of the middle plate towards edge, first through hole is formed in the end of a flow path, at the bottom
In plate, the secondary flow path is formed from the edge of the bottom plate towards center.
15. reaction induced unit according to claim 12, which is characterized in that the middle plate has nave in center
Portion, is connected with a flow path in the nave portion, and it is wide that gas by the gas injection port flows into the center
Field portion, a flow path are provided by partition wall, and the Secondary Flow routes flute profile state to provide.
16. a kind of membrane deposition method in substrate board treatment according to claim 1, for be divided into it is more
Deposition film in the cavity in a region characterized by comprising
First step provides the first presoma on the first substrate, cleans and aspirate one of the second presoma in the second substrate
Part provides third free radical on the third presoma on third substrate to form third film, the 4th base of cleaning and suction
Remaining 4th free radical on 4th film of plate；
Second step cleans and aspirates a part of first presoma of the first substrate, in the second substrate
The second free radical is provided on second presoma to form the second film, remaining described the in cleaning and suction third substrate
Triradicals provide the 4th presoma on the 4th free radical of the tetrabasal；
Third step provides the first free radical to form the first film, clearly on first presoma of the first substrate
Remaining second free radical in the second substrate is washed and aspirated, the third forerunner is provided on the third substrate
Body cleans and aspirates a part of the 4th presoma on the tetrabasal；And
Four steps is cleaned and is aspirated remaining first free radical on the first substrate, mentions on the second substrate
For second presoma, a part of the third presoma on the third substrate is cleaned and aspirates, the described 4th
The 4th free radical is provided on the 4th presoma on substrate to form the 4th film.
17. membrane deposition method according to claim 16, which is characterized in that the first step to the four steps
It is executed at 520 DEG C, first to fourth presoma includes silane, and first to fourth free radical includes hydroxyl.
18. a kind of membrane deposition method in substrate board treatment according to claim 1 characterized by comprising
First step, while the first presoma is formed on the first substrate in substrate and on the second presoma of the second substrate
The second free radical is formed, to form the second film on the second substrate；And
Second step, while the first free radical is provided on first presoma in the substrate and in second film
The second presoma of upper offer, to form the first film on the first substrate.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130140117A KR101523299B1 (en) | 2013-11-18 | 2013-11-18 | Reaction induction unit and substrate processing apparatus |
| KR10-2013-0140117 | 2013-11-18 | ||
| KR20140027878 | 2014-03-10 | ||
| KR10-2014-0027878 | 2014-03-10 | ||
| PCT/KR2014/008908 WO2015072661A1 (en) | 2013-11-18 | 2014-09-24 | Reaction inducing unit, substrate treating apparatus, and thin-film deposition method |
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| CN105814664A CN105814664A (en) | 2016-07-27 |
| CN105814664B true CN105814664B (en) | 2019-05-17 |
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| JP (1) | JP6290406B2 (en) |
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| US10910243B2 (en) * | 2018-08-31 | 2021-02-02 | Applied Materials, Inc. | Thermal management system |
| KR102170451B1 (en) * | 2020-01-22 | 2020-10-28 | (주)이큐테크플러스 | Radical unit device for distributing precursor and reactant gas and atomic layer deposition apparatus including radical unit device therefor |
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| CN1551302A (en) * | 2003-05-13 | 2004-12-01 | ���������ƴ���ʽ���� | Upper electrode and plasma processing device |
| CN101236891A (en) * | 2007-01-19 | 2008-08-06 | 东京毅力科创株式会社 | Plasma processing device |
| CN102576661A (en) * | 2009-08-31 | 2012-07-11 | 圆益Ips股份有限公司 | Gas injection apparatus and substrate processing apparatus using same |
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| KR100667676B1 (en) * | 2004-10-15 | 2007-01-12 | 세메스 주식회사 | Gas injection apparatus of plasma treatment apparatus |
| KR100901118B1 (en) * | 2007-08-24 | 2009-06-08 | 주식회사 케이씨텍 | Injection Unit of Atomic Layer Deposition Device |
| KR100931331B1 (en) * | 2007-08-24 | 2009-12-15 | 주식회사 케이씨텍 | Injection unit of thin film deposition apparatus |
| KR101100284B1 (en) * | 2010-06-21 | 2011-12-30 | 세메스 주식회사 | Thin film deposition apparatus |
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|---|---|---|---|---|
| CN1551302A (en) * | 2003-05-13 | 2004-12-01 | ���������ƴ���ʽ���� | Upper electrode and plasma processing device |
| CN101236891A (en) * | 2007-01-19 | 2008-08-06 | 东京毅力科创株式会社 | Plasma processing device |
| CN102576661A (en) * | 2009-08-31 | 2012-07-11 | 圆益Ips股份有限公司 | Gas injection apparatus and substrate processing apparatus using same |
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| JP6290406B2 (en) | 2018-03-07 |
| CN105814664A (en) | 2016-07-27 |
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| JP2016538424A (en) | 2016-12-08 |
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