TW201728377A - Wafer cleaning apparatus - Google Patents
Wafer cleaning apparatus Download PDFInfo
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- TW201728377A TW201728377A TW105130266A TW105130266A TW201728377A TW 201728377 A TW201728377 A TW 201728377A TW 105130266 A TW105130266 A TW 105130266A TW 105130266 A TW105130266 A TW 105130266A TW 201728377 A TW201728377 A TW 201728377A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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Abstract
Description
本發明是有關於一種用以清洗晶圓的晶圓清洗裝置。The present invention relates to a wafer cleaning apparatus for cleaning wafers.
於半導體元件的製造製程中，反覆執行於在晶圓上形成圖案後進行清洗的清洗製程。對晶圓進行清洗的原因在於，去除光阻膜或聚合物膜等有機物或顆粒等。晶圓的清洗製程可藉由如下方式實現：於使晶圓旋轉的狀態下，向晶圓的清洗面、即晶圓的上表面噴射晶圓清洗液、例如鹼性清洗液與酸性清洗液的組合或混合有常溫的純水、高溫蒸汽及壓縮乾燥空氣的多相流體。In the manufacturing process of the semiconductor device, the cleaning process of performing cleaning after forming a pattern on the wafer is repeatedly performed. The reason for cleaning the wafer is to remove organic substances such as a photoresist film or a polymer film, particles, and the like. The wafer cleaning process can be realized by spraying a wafer cleaning solution, such as an alkaline cleaning solution and an acidic cleaning solution, onto the cleaning surface of the wafer, that is, the upper surface of the wafer, while rotating the wafer. A multiphase fluid having normal temperature pure water, high temperature steam, and compressed dry air is combined or mixed.
然而，於在向晶圓的清洗面、即晶圓的上表面噴射晶圓清洗液後，噴射於晶圓的清洗液脫離清洗裝置而與周邊零件接觸的情形時，會對周邊零件產生不良影響而損傷周邊零件。並且，於無法順利地排出噴射於晶圓的清洗液的情形時，未排出的清洗液會對晶圓產生不良影響，因此可降低半導體元件的品質。However, when the wafer cleaning liquid is sprayed onto the cleaning surface of the wafer, that is, the upper surface of the wafer, the cleaning liquid sprayed on the wafer is separated from the cleaning device and comes into contact with the peripheral components, which adversely affects the peripheral components. Damage to surrounding parts. Further, when the cleaning liquid sprayed on the wafer cannot be smoothly discharged, the cleaning liquid that is not discharged adversely affects the wafer, so that the quality of the semiconductor element can be reduced.
[發明欲解決的課題] 於本發明的一實施例中，提供一種於向配置至殼體內部的晶圓噴射清洗液的情形時，可防止所噴射的清洗液除指定的排出路徑以外向殼體的外部排出的清洗裝置。 [解決課題的手段][Problem to be Solved by the Invention] In an embodiment of the present invention, it is provided that, when a cleaning liquid is sprayed onto a wafer disposed inside a casing, it is possible to prevent the injected cleaning liquid from being discharged to the casing except for a specified discharge path. A cleaning device that is externally discharged from the body. [Means for solving the problem]
一實施例的晶圓清洗裝置可包括：圓筒形的殼體，上部面開放；晶圓夾盤，配置至殼體內部而支持晶圓；清洗液噴射裝置，向晶圓噴射清洗流體；以及噴射部，配置至殼體的上部面，以與上部面保持特定的噴射角度的狀態噴射具有特定的流速的氣體。The wafer cleaning apparatus of an embodiment may include: a cylindrical casing having an upper surface open; a wafer chuck disposed inside the casing to support the wafer; and a cleaning liquid spraying device to spray the cleaning fluid to the wafer; The injection portion is disposed to the upper surface of the casing, and ejects a gas having a specific flow velocity in a state of maintaining a specific injection angle with the upper surface.
一實施例的晶圓清洗裝置可更包括：第一排出單元，配置至殼體的下部面；以及第二排出單元，配置至第一排出單元與殼體的上部面之間。The wafer cleaning apparatus of an embodiment may further include: a first discharge unit disposed to a lower surface of the housing; and a second discharge unit disposed between the first discharge unit and an upper surface of the housing.
於一實施例的晶圓清洗裝置中，上部面與自噴射部噴射的氣體之間形成的噴射角度可為0º以上且45º以下。In the wafer cleaning apparatus of one embodiment, the ejection angle formed between the upper surface and the gas ejected from the ejection portion may be 0o or more and 45o or less.
一實施例的晶圓清洗裝置可更包括配置至殼體的上部面的環形的支持部，噴射部包括多個噴嘴部，多個噴嘴部以沿支持部的圓周方向彼此隔以特定間隔的方式配置。The wafer cleaning apparatus of an embodiment may further include an annular support portion disposed to an upper surface of the housing, the ejection portion including a plurality of nozzle portions spaced apart from each other by a specific interval in a circumferential direction of the support portion Configuration.
一實施例的晶圓清洗裝置可更包括回收部，回收部配置至殼體的下部，收納晶圓夾盤，回收部與第一排出單元流體連通。The wafer cleaning apparatus according to an embodiment may further include a recovery unit disposed to a lower portion of the casing to house the wafer chuck, and the recovery unit is in fluid communication with the first discharge unit.
一實施例的晶圓清洗裝置可更包括使晶圓夾盤旋轉的晶圓驅動單元。The wafer cleaning apparatus of an embodiment may further include a wafer driving unit that rotates the wafer chuck.
於一實施例的晶圓清洗裝置中，殼體可包括可分離及結合的本體部及罩蓋部，第二排出單元配置至罩蓋部。In the wafer cleaning apparatus of one embodiment, the housing may include a detachable and coupled body portion and a cover portion, and the second discharge unit is disposed to the cover portion.
於一實施例的晶圓清洗裝置中，在支持部的直徑為350 mm至550 mm的情形時，多個噴嘴部可由40個至60個形成。In the wafer cleaning apparatus of an embodiment, in the case where the diameter of the support portion is 350 mm to 550 mm, the plurality of nozzle portions may be formed of 40 to 60.
於一實施例的晶圓清洗裝置中，在噴嘴部的噴出流速為0.003 CMS至0.006 CMS的情形時，第二排出單元的吸入流速可為0.08 CMS至0.12 CMS。In the wafer cleaning apparatus of one embodiment, the suction flow rate of the second discharge unit may be 0.08 CMS to 0.12 CMS when the discharge flow rate of the nozzle portion is 0.003 CMS to 0.006 CMS.
於一實施例的晶圓清洗裝置中，自多個噴嘴部噴出的氣體可沿殼體的外壁面向一方向旋轉，藉由流路而形成阻斷清洗流體向殼體外部排出的氣幕。In the wafer cleaning apparatus of the embodiment, the gas ejected from the plurality of nozzle portions is rotatable in one direction along the outer wall surface of the casing, and a gas curtain that blocks the discharge of the cleaning fluid to the outside of the casing is formed by the flow path.
一實施例的晶圓清洗裝置可更包括對自多個噴嘴部噴出的氣體的噴射方向進行調節的噴射方向調節部。The wafer cleaning apparatus of one embodiment may further include an injection direction adjusting portion that adjusts an injection direction of gas ejected from the plurality of nozzle portions.
一實施例的晶圓清洗裝置可更包括控制部，控制部對噴射方向調節部及噴嘴部進行控制而控制自噴嘴部噴出的氣體的流速及噴射方向。 [發明效果]The wafer cleaning apparatus according to the embodiment may further include a control unit that controls the injection direction adjustment unit and the nozzle unit to control the flow rate and the injection direction of the gas ejected from the nozzle unit. [Effect of the invention]
根據本發明的上述解決課題的手段，於向配置至殼體內部的晶圓噴射清洗液的情形時，可防止所噴射的清洗液除指定的排出路徑以外向殼體外部排出而防止清洗液損傷周邊裝置。According to the above-described problem of the present invention, when the cleaning liquid is sprayed onto the wafer disposed inside the casing, it is possible to prevent the injected cleaning liquid from being discharged to the outside of the casing in addition to the specified discharge path to prevent the cleaning liquid from being damaged. Peripheral device.
並且，藉由順利地排出噴射於晶圓的清洗液，可防止清洗液損傷晶圓而防止半導體元件的品質下降。Further, by smoothly discharging the cleaning liquid sprayed on the wafer, it is possible to prevent the cleaning liquid from damaging the wafer and prevent deterioration of the quality of the semiconductor element.
本發明中所使用的用語是考慮於本發明中的功能而儘可能地選擇目前廣泛使用的普通用語，但可根據從業於本技術領域的技術人員的意圖或判例、新技術的出現等而改變。並且，於特定的情形時，亦存在申請人任意選擇的用語，於此情形時，在相應的發明的說明部分中詳細記載其含義。因此，本發明中所使用的用語應基於用語所具有的含義與本發明的全部內容而定義，並非單純地以用語的名稱定義。The terminology used in the present invention is to select a common term that is widely used as far as possible in consideration of the functions in the present invention, but may be changed according to the intention or jurisprudence of those skilled in the art, the appearance of new technology, and the like. . Further, in a specific case, there is also a term that the applicant arbitrarily selects. In this case, the meaning is described in detail in the explanatory part of the corresponding invention. Therefore, the terms used in the present invention should be defined based on the meaning of the terms and the entire contents of the present invention, and are not simply defined by the names of the terms.
於整篇說明書中，在記載為某個部分“包括”某個構成要素時，若無特別相反的記載，則是指可更包括其他構成要素，而並非是指排除其他構成要素。並且，說明書中所記載的“…部”、“模組”等用語是指對至少一個功能或動作進行處理的單位，其以硬體或軟體實現、或以硬體與軟體的結合實現。In the entire specification, when a part is referred to as “comprising” a certain component, unless otherwise stated, it means that it may include other components, and does not exclude other components. Further, the terms "parts" and "module" described in the specification refer to a unit that processes at least one function or operation, and is implemented by hardware or software, or by a combination of hardware and software.
以下，參照隨附圖式，詳細地對本發明的實施例進行說明，以便在本發明所屬技術領域內具有常識者可容易地實施。然而，本發明可由多種不同的形態實施，並不限定於此處所說明的實施例。Hereinafter, the embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that they can be easily implemented by those having ordinary knowledge in the technical field to which the present invention pertains. However, the invention may be embodied in a variety of different forms and is not limited to the embodiments described herein.
以下，參照隨附圖式，詳細地對本發明的實施例進行說明。Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
圖1是表示本發明的一實施例的晶圓清洗裝置的立體圖。圖2是本發明的一實施例的晶圓清洗裝置的立體分解圖。圖3是表示本發明的一實施例的晶圓清洗裝置的方塊圖。Fig. 1 is a perspective view showing a wafer cleaning apparatus according to an embodiment of the present invention. 2 is an exploded perspective view of a wafer cleaning apparatus according to an embodiment of the present invention. Fig. 3 is a block diagram showing a wafer cleaning apparatus according to an embodiment of the present invention.
參照圖式，本發明的一實施例的晶圓清洗裝置1可包括：圓筒形的殼體100；噴射部200，配置至殼體100的上部面；晶圓夾盤300，支持晶圓；晶圓驅動單元400，使晶圓夾盤300旋轉；清洗液噴射裝置500，噴射清洗液；第一排出單元600與第二排出單元700，自殼體100排出清洗液；以及控制部800。Referring to the drawings, a wafer cleaning apparatus 1 according to an embodiment of the present invention may include: a cylindrical housing 100; an ejection portion 200 disposed to an upper surface of the housing 100; and a wafer chuck 300 supporting a wafer; The wafer driving unit 400 rotates the wafer chuck 300; the cleaning liquid ejecting apparatus 500 ejects the cleaning liquid; the first discharge unit 600 and the second discharge unit 700 discharge the cleaning liquid from the casing 100; and the control unit 800.
本發明的一實施例的殼體100可形成為上部側開口的圓筒形。藉此，可排除圓筒形的殼體100的邊角部分，於流體在圓筒形的殼體100內部流動的情形時，可防止流體殘留或產生渦流而將晶圓清洗液順利地排出至外部。並且，此時可於殼體100的一面、即上部面101形成開口部102，藉此可藉由開口部102排出分佈至殼體100內部的清洗液。然而，本發明所揭示的殼體100的形狀並不限制於圓筒形，亦可於晶圓清洗裝置1中使用呈各種形狀的殼體100。The housing 100 of one embodiment of the present invention may be formed in a cylindrical shape whose upper side is open. Thereby, the corner portion of the cylindrical casing 100 can be eliminated, and when the fluid flows inside the cylindrical casing 100, the fluid can be prevented from remaining or eddy current can be smoothly discharged to the wafer cleaning liquid. external. Further, at this time, the opening portion 102 can be formed on one surface of the casing 100, that is, the upper surface 101, whereby the cleaning liquid distributed to the inside of the casing 100 can be discharged by the opening portion 102. However, the shape of the housing 100 disclosed in the present invention is not limited to a cylindrical shape, and the housing 100 in various shapes may be used in the wafer cleaning apparatus 1.
並且，本發明的一實施例的殼體100可包括可分離及結合的本體部110及罩蓋部120。本體部110為可收容下文將述的晶圓夾盤300的收容部，可配置至圓筒形的殼體100的下部。根據一實施例，可於本體部110的內部配置回收部112。作為一例，回收部112為上側開口且於下表面具備貫通孔而可排出清洗液的流體回收空間。根據一實施例，晶圓夾盤300可配置至上側開口的回收部112的內部，於下部形成貫通孔而可與下文將述的第一排出單元600流體連通。Moreover, the housing 100 of an embodiment of the present invention may include a body portion 110 and a cover portion 120 that are separable and coupled. The main body portion 110 is a accommodating portion that can accommodate the wafer chuck 300 to be described later, and can be disposed at a lower portion of the cylindrical casing 100. According to an embodiment, the recovery portion 112 can be disposed inside the body portion 110. As an example, the collection unit 112 is a fluid recovery space that is open at the upper side and has a through hole on the lower surface to discharge the cleaning liquid. According to an embodiment, the wafer chuck 300 may be disposed to the inside of the upper opening recovery portion 112, and a through hole may be formed in the lower portion to be in fluid communication with the first discharge unit 600 to be described later.
罩蓋部120為可配置至圓筒形的腔室殼體100的上端而覆蓋圓筒形的腔室殼體100的上端的罩蓋構件。本體部110及罩蓋部120可根據使用環境而分離及結合，可於罩蓋部120的一面配置上述開口部102。然而，本發明並不限制於此，殼體100亦可形成為本體部110及罩蓋部120以固定的方式結合的一體成形。The cover portion 120 is a cover member that is configurable to the upper end of the cylindrical chamber housing 100 to cover the upper end of the cylindrical chamber housing 100. The main body portion 110 and the cover portion 120 can be separated and coupled according to the use environment, and the opening portion 102 can be disposed on one surface of the cover portion 120. However, the present invention is not limited thereto, and the housing 100 may be formed integrally formed in a fixed manner in combination with the body portion 110 and the cover portion 120.
噴射部200為如下的阻斷裝置：配置至殼體100的上部面101而排出具有特定的流速的氣體，藉此可阻斷會自開口部102排出的清洗液。作為一例，噴射部200可包括環形的支持部210、及可沿上述環形的支持部210的圓周方向隔以特定間隔而配置的多個噴嘴部250。之後參照圖4至圖7，更具體地對與利用噴射部200阻斷清洗液的排出相關的具體事項進行敍述。The injection unit 200 is a blocking device that is disposed on the upper surface 101 of the casing 100 and discharges a gas having a specific flow rate, whereby the cleaning liquid discharged from the opening 102 can be blocked. As an example, the injection portion 200 may include an annular support portion 210 and a plurality of nozzle portions 250 that are disposed at a predetermined interval in the circumferential direction of the annular support portion 210. Hereinafter, specific matters related to the discharge of the cleaning liquid by the injection unit 200 will be described more specifically with reference to FIGS. 4 to 7.
晶圓夾盤300為可支持晶圓的支持構件。作為一例，晶圓夾盤300可呈外形尺寸與所支持的晶圓相同或較晶圓小一尺寸的圓板形狀。作為一例，可如上所述般形成為晶圓薄膜形狀的圓板，晶圓夾盤300能夠以較薄膜形狀的晶圓小一尺寸或相同的方式形成。然而，本發明並不限制於此，亦可根據所支持的晶圓的形狀、尺寸等而設定晶圓夾盤300的形狀、尺寸等。以與晶圓面向的方式配置的晶圓夾盤300的一面310可為晶圓支持面，作為一例，於晶圓夾盤300由真空夾盤形成的情形時，自配置於晶圓夾盤300的一面310的真空線（未圖示）抽吸空氣而產生抽吸力，藉此可固定晶圓。The wafer chuck 300 is a support member that can support the wafer. As an example, the wafer chuck 300 may have a circular plate shape that is the same size as the supported wafer or smaller than the wafer. As an example, a wafer having a wafer film shape can be formed as described above, and the wafer chuck 300 can be formed in a smaller size or the same manner as a wafer having a thin film shape. However, the present invention is not limited thereto, and the shape, size, and the like of the wafer chuck 300 may be set according to the shape, size, and the like of the supported wafer. One side 310 of the wafer chuck 300 disposed in a wafer-facing manner may be a wafer support surface. For example, when the wafer chuck 300 is formed by a vacuum chuck, it is self-disposed to the wafer chuck 300. A vacuum line (not shown) of one side 310 draws air to generate a suction force, whereby the wafer can be fixed.
晶圓驅動單元400為可使晶圓夾盤300旋轉，亦使晶圓夾盤300上下移動的驅動部。一實施例的晶圓夾盤300可包括於一端部配置晶圓夾盤300，且於內部形成真空流路的軸（未圖示），晶圓驅動單元400可使軸（未圖示）上下驅動及旋轉驅動。藉此，晶圓夾盤300可上下移動及旋轉，晶圓驅動單元400位於基底框架的下方而與軸連接。可使晶圓夾盤300上下移動及旋轉的晶圓驅動單元400為普通的技術，因此省略具體說明。The wafer driving unit 400 is a driving unit that can rotate the wafer chuck 300 and also move the wafer chuck 300 up and down. The wafer chuck 300 of one embodiment may include a shaft (not shown) in which the wafer chuck 300 is disposed at one end and a vacuum flow path is formed therein, and the wafer driving unit 400 may open the shaft (not shown) Drive and rotary drive. Thereby, the wafer chuck 300 can be moved up and down and rotated, and the wafer driving unit 400 is located below the base frame and connected to the shaft. The wafer driving unit 400 that can move and rotate the wafer chuck 300 up and down is a common technique, and thus detailed description thereof will be omitted.
清洗液噴射裝置500一面隨晶圓的位置沿上下方向及水平方向移動，一面向晶圓噴射多相流體（multi-phase fluid）。多相流體可包括蒸汽（steam）、純水（deionized water）及壓縮乾燥空氣（CDA：Compressed Dry Air），但本發明並不限制於此。作為一例，清洗液噴射裝置500可包括噴射多相流體的噴嘴構件510及驅動單元520。噴嘴構件510以與晶圓的上表面面向的方式配置，可一面沿第一方向X及第二方向Y移動，一面向晶圓的上表面噴射清洗液而執行清洗製程。The cleaning liquid ejecting apparatus 500 moves in the up and down direction and the horizontal direction with the position of the wafer, and a multi-phase fluid is sprayed toward the wafer. The multiphase fluid may include steam, deionized water, and compressed dry air (CDA: Compressed Dry Air), but the invention is not limited thereto. As an example, the cleaning liquid spraying device 500 may include a nozzle member 510 that sprays a multi-phase fluid and a driving unit 520. The nozzle member 510 is disposed so as to face the upper surface of the wafer, and is movable in the first direction X and the second direction Y, and the cleaning process is performed by spraying the cleaning liquid toward the upper surface of the wafer.
第一排出單元600可包括與殼體100連通的第一排氣管610、及連接至第一排氣管610的送風單元（未圖示）。作為一例，第一排氣管610可設置為一端部與殼體100的下端部，更具體而言，設置於本體部110的回收部112連通的直線管部形狀。藉此，結束清洗製程的清洗液可於收回至回收部112後，藉由第一排出單元600而排出至外部。此時，送風單元可產生排氣壓力，以使處於殼體100的內部的清洗液排出至外部。The first discharge unit 600 may include a first exhaust pipe 610 that communicates with the housing 100, and a blower unit (not shown) that is connected to the first exhaust pipe 610. As an example, the first exhaust pipe 610 may be provided in a shape of a straight pipe portion in which one end portion is connected to a lower end portion of the casing 100, and more specifically, to the collecting portion 112 of the body portion 110. Thereby, the cleaning liquid that has finished the cleaning process can be discharged to the outside by the first discharge unit 600 after being recovered to the recovery unit 112. At this time, the blower unit may generate exhaust pressure to discharge the washing liquid inside the casing 100 to the outside.
第一排出單元600可包括與殼體100連通的第一排氣管610、及連接至第一排氣管610的送風單元（未圖示）。作為一例，第一排氣管610能夠以一端部與殼體100的下端部、更具體而言設置於本體部110的回收部112連通的直線管部形狀設置。藉此，結束清洗製程的清洗液可於收回至回收部112後，藉由第一排出單元600而排出至外部。此時，送風單元可產生排氣壓力，以使處於殼體100的內部的清洗液排出至外部。The first discharge unit 600 may include a first exhaust pipe 610 that communicates with the housing 100, and a blower unit (not shown) that is connected to the first exhaust pipe 610. As an example, the first exhaust pipe 610 can be provided in a shape of a straight pipe portion in which one end portion communicates with the lower end portion of the casing 100, more specifically, the collecting portion 112 of the main body portion 110. Thereby, the cleaning liquid that has finished the cleaning process can be discharged to the outside by the first discharge unit 600 after being recovered to the recovery unit 112. At this time, the blower unit may generate exhaust pressure to discharge the washing liquid inside the casing 100 to the outside.
第二排出單元700可包括與殼體100連通的第二排氣管710及連接至第二排氣管710的送風單元（未圖示）。作為一例，第二排氣管710可設置為一端部連通至殼體100的上端部，更具體而言，罩蓋部120的直線管部形狀，此時第二排氣管710可配置至殼體100的上部面101與第一排出單元600的第一排氣管610之間。並且，此時送風單元可連接至第二排氣管710的另一端而產生排氣壓力，以使處於殼體100的內部的清洗液排出至外部。The second discharge unit 700 may include a second exhaust pipe 710 that communicates with the housing 100 and a blower unit (not shown) that is connected to the second exhaust pipe 710. As an example, the second exhaust pipe 710 may be disposed such that one end portion communicates with the upper end portion of the casing 100, and more specifically, the shape of the straight pipe portion of the cover portion 120, and at this time, the second exhaust pipe 710 may be disposed to the casing. The upper surface 101 of the body 100 is between the first exhaust pipe 610 of the first discharge unit 600. Also, at this time, the blower unit may be connected to the other end of the second exhaust pipe 710 to generate exhaust pressure to discharge the washing liquid inside the casing 100 to the outside.
控制部800可為整體地控制晶圓清洗裝置1的作動的控制裝置。作為一例，控制部800可控制晶圓驅動單元400及清洗液噴射裝置500的作動而對晶圓夾盤300的移動及旋轉、以及與之對應的清洗液噴射裝置500的移動等進行控制。並且，控制部800可對自噴射部200、更具體而言，下文將述的噴嘴部250噴出的高壓空氣的噴射角度進行控制。The control unit 800 may be a control device that integrally controls the operation of the wafer cleaning apparatus 1. As an example, the control unit 800 can control the movement of the wafer driving unit 400 and the cleaning liquid ejection device 500 to control the movement and rotation of the wafer chuck 300 and the movement of the cleaning liquid ejection device 500 corresponding thereto. Further, the control unit 800 can control the injection angle of the high-pressure air ejected from the injection unit 200, more specifically, the nozzle unit 250 to be described later.
圖4是本發明的一實施例的噴射部的局部立體圖。圖5是本發明的一實施例的晶圓清洗裝置的剖面圖。Fig. 4 is a partial perspective view of an injection portion according to an embodiment of the present invention. Fig. 5 is a cross-sectional view showing a wafer cleaning apparatus according to an embodiment of the present invention.
參照圖式，噴射部200可包括：支持部210，配置至殼體100的上部面101的開口部102；以及多個噴嘴部250，配置至支持部210。作為一例，於開口部102設置為圓形的情形時，支持部210可呈沿開口部102的圓周方向延伸的環形。此時，多個噴嘴部250能夠以沿支持部210的圓周方向而彼此隔以特定間隔的方式配置。然而，本發明並不限制於此，支持部210的形狀可根據開口部102的形狀而改變，配置多個噴嘴部250的位置亦可根據支持部210的形狀而改變。Referring to the drawings, the injection portion 200 may include a support portion 210, an opening portion 102 disposed to the upper surface 101 of the casing 100, and a plurality of nozzle portions 250 disposed to the support portion 210. As an example, when the opening portion 102 is provided in a circular shape, the support portion 210 may have a ring shape extending in the circumferential direction of the opening portion 102. At this time, the plurality of nozzle portions 250 can be disposed at a predetermined interval from each other in the circumferential direction of the support portion 210. However, the present invention is not limited thereto, and the shape of the support portion 210 may be changed according to the shape of the opening portion 102, and the position at which the plurality of nozzle portions 250 are disposed may be changed according to the shape of the support portion 210.
多個噴嘴部250可自對上述噴嘴部250供給高壓空氣的供氣管道（未圖示）分支而接收高壓空氣。具備於多個噴嘴部250的噴射口251能夠以朝向環形的支持部210的內側、即殼體100的內部的方式配置，且能夠以沿環形的支持部210的內側部構成一行的方式形成。然而，本發明並不限制於此，具備於多個噴嘴部250的噴射口251亦可設置成沿環形的支持部210的內側部排列成兩行以上的構造。The plurality of nozzle portions 250 can receive high-pressure air by branching from an air supply duct (not shown) that supplies high-pressure air to the nozzle unit 250. The injection port 251 provided in the plurality of nozzle portions 250 can be disposed toward the inner side of the annular support portion 210, that is, the inside of the casing 100, and can be formed to form one line along the inner side portion of the annular support portion 210. However, the present invention is not limited thereto, and the injection ports 251 provided in the plurality of nozzle portions 250 may be provided in a structure in which two or more rows are arranged along the inner side portion of the annular support portion 210.
根據一實施例，亦可將自噴嘴部250噴出的高壓空氣的噴射角度α調節成各種角度。作為一例，自噴嘴部250噴射的高壓空氣的噴射角度α可於殼體100的上部面101與自噴射口251噴射的高壓空氣之間為0º以上且45º以下。According to an embodiment, the injection angle α of the high-pressure air ejected from the nozzle portion 250 can also be adjusted to various angles. As an example, the injection angle α of the high-pressure air injected from the nozzle unit 250 may be 0° or more and 45° or less between the upper surface 101 of the casing 100 and the high-pressure air injected from the injection port 251 .
根據一實施例，於自噴嘴部250噴出的高壓空氣的噴射角度α為0º的情形時，可沿殼體100的上部面101噴出高壓空氣A1，藉此於晶圓的清洗過程中飛濺而朝向殼體100上部的清洗液S1因自噴嘴部250噴出的高壓空氣A1而無法飛濺至殼體100的外部，從而停滯於殼體100的內部。此時，第二排出單元700可吸入停滯於殼體100的上部面101的清洗液S1而排出至殼體100的外部S2。藉此，不僅可防止清洗液附著至晶圓清洗裝置1的外部裝置而損傷外部裝置的現象，而且可防止向上部飛濺的清洗液再次附著至晶圓的上部而損傷晶圓的現象。According to an embodiment, when the injection angle α of the high-pressure air ejected from the nozzle unit 250 is 0°, the high-pressure air A1 can be ejected along the upper surface 101 of the casing 100, thereby being splashed toward the cleaning process of the wafer. The cleaning liquid S1 in the upper portion of the casing 100 cannot be splashed outside the casing 100 due to the high-pressure air A1 ejected from the nozzle portion 250, and is stagnated inside the casing 100. At this time, the second discharge unit 700 can suck the cleaning liquid S1 stagnated on the upper surface 101 of the casing 100 and discharge it to the outside S2 of the casing 100. Thereby, it is possible to prevent not only the cleaning liquid from adhering to the external device of the wafer cleaning apparatus 1 but also the external device, and it is possible to prevent the cleaning liquid splashed up to the upper portion from adhering to the upper portion of the wafer and damaging the wafer.
然而，於如上所述般自噴嘴部250噴出的高壓空氣A1的噴射角度α為0º的情形時，雖可阻斷於晶圓的清洗過程中飛濺而朝向殼體100的上部的清洗液，但為了利用第二排出單元700去除停滯至殼體100的上部面101的清洗液、特別是配置於遠離第二排出單元700的位置的清洗液，會過度地要求第二排出單元700的吸入力。However, when the injection angle α of the high-pressure air A1 ejected from the nozzle unit 250 is 0° as described above, it is possible to block the cleaning liquid which is splashed toward the upper portion of the casing 100 during the cleaning of the wafer, but In order to remove the cleaning liquid stagnated to the upper surface 101 of the casing 100 by the second discharge unit 700, particularly the cleaning liquid disposed at a position away from the second discharge unit 700, the suction force of the second discharge unit 700 is excessively required.
圖6是本發明的一實施例的晶圓清洗裝置的剖面圖。圖7是本發明的一實施例的晶圓清洗裝置的俯視圖。Fig. 6 is a cross-sectional view showing a wafer cleaning apparatus according to an embodiment of the present invention. Fig. 7 is a plan view of a wafer cleaning apparatus according to an embodiment of the present invention.
作為另一實施例，於自噴嘴部250噴出的高壓空氣A2的噴射角度α具備特定的角度的情形時，會於殼體100的內部、更具體而言，上部面101的下部形成空氣流動層。例如，於如下情形時，會於上部面101的下部形成以一軸為中心而向一方向按照螺旋形旋轉的空氣流動層A3：自噴嘴部250噴出的高壓空氣A2的噴射角度α為0º以上至45º以下、更具體而言為10º，於直徑為350 mm至550 mm、更具體而言為450 mm的支持部210配置40個至60個、更具體而言為50個噴嘴部250，自上述噴嘴部250分別噴出0.003 CMS至0.006 CMS的流速的高壓空氣、更具體而言為0.005 CMS的流速的高壓空氣。此時，第二排出單元700能夠以特定的吸入壓力吸入隨上述空氣流動層A3旋轉的清洗液S3。作為一例，第二排出單元700能夠以0.08 CMS至0.12 CMS的吸入流速、更具體而言0.10 CMS的吸入流速吸入清洗液，藉此可藉由第二排出單元700將因由噴嘴部250噴出的高壓空氣A2而阻斷向殼體100外部的排出的清洗液S3排出至殼體100的外部S4。根據上述實施例，不僅可阻斷於晶圓的清洗過程中飛濺而朝向殼體100的上部的清洗液，而且於利用具備固定的吸入力的第二排出單元700的情形時，亦可與停滯於殼體100的上部面101的清洗液的位置無關地將清洗液排出至殼體100的外部。In another embodiment, when the injection angle α of the high-pressure air A2 ejected from the nozzle unit 250 has a specific angle, an air flow layer is formed inside the casing 100, more specifically, at the lower portion of the upper surface 101. . For example, in the case where the air flow layer A3 which is spirally rotated in one direction about one axis is formed in the lower portion of the upper surface 101, the injection angle α of the high-pressure air A2 ejected from the nozzle portion 250 is 0 or more. 45o or less, more specifically 10o, 40 to 60, more specifically 50 nozzles 250 are arranged in the support portion 210 having a diameter of 350 mm to 550 mm, more specifically 450 mm, from the above The nozzle portion 250 ejects high-pressure air of a flow rate of 0.003 CMS to a flow rate of 0.006 CMS, more specifically, a flow rate of 0.005 CMS. At this time, the second discharge unit 700 can suck the cleaning liquid S3 that rotates with the air flow layer A3 at a specific suction pressure. As an example, the second discharge unit 700 can suck the cleaning liquid at a suction flow rate of 0.08 CMS to 0.12 CMS, more specifically, a suction flow rate of 0.10 CMS, whereby the high pressure due to the nozzle portion 250 can be discharged by the second discharge unit 700. The air A2 blocks the discharge of the cleaning liquid S3 discharged to the outside of the casing 100 to the outside S4 of the casing 100. According to the above embodiment, not only the cleaning liquid which is splashed toward the upper portion of the casing 100 during the cleaning of the wafer but also the second discharge unit 700 having the fixed suction force can be blocked. The cleaning liquid is discharged to the outside of the casing 100 regardless of the position of the cleaning liquid on the upper surface 101 of the casing 100.
圖8是本發明的另一實施例的噴射部的局部立體圖。Figure 8 is a partial perspective view of an injection portion of another embodiment of the present invention.
根據本發明的另一實施例，可根據殼體100的內部狀況而對自噴嘴部250噴出的高壓空氣的噴射角度α進行調節。參照圖式，本發明的一實施例的晶圓清洗裝置1可更包括噴射方向調節部260，上述噴射方向調節部可對自噴嘴部250噴出的高壓空氣的噴射角度α進行調節。作為一例，噴射方向調節部260可配置至噴嘴部250的一端部，可藉由圖2所示的控制部800而調節上述噴嘴部250朝向殼體100的內部的配置、更具體而言噴射口251的配置。藉此，亦可調節自噴嘴部250噴出的高壓空氣的噴射角度α，能夠以可與各種清洗環境對應地藉由第二排出單元700排出清洗液的方式調節高壓空氣的噴射角度α。According to another embodiment of the present invention, the injection angle α of the high-pressure air ejected from the nozzle portion 250 can be adjusted according to the internal condition of the casing 100. Referring to the drawings, the wafer cleaning apparatus 1 according to an embodiment of the present invention may further include an injection direction adjusting unit 260 that adjusts an injection angle α of high-pressure air discharged from the nozzle unit 250. As an example, the injection direction adjusting unit 260 may be disposed at one end of the nozzle unit 250, and the arrangement of the nozzle unit 250 toward the inside of the casing 100, more specifically, the injection port, may be adjusted by the control unit 800 illustrated in FIG. 2 . 251 configuration. Thereby, the injection angle α of the high-pressure air discharged from the nozzle unit 250 can be adjusted, and the injection angle α of the high-pressure air can be adjusted so that the cleaning liquid can be discharged by the second discharge unit 700 in accordance with various cleaning environments.
利用自噴嘴部250噴出的高壓空氣阻斷清洗液向殼體100的外部排出，且藉由第一排出單元600及第二排出單元700排出殘留的清洗液的內容與上述實施例中所記載的事項實質上相同，因此此處省略說明。The high-pressure air ejected from the nozzle unit 250 blocks the cleaning liquid from being discharged to the outside of the casing 100, and the contents of the remaining cleaning liquid discharged by the first discharge unit 600 and the second discharge unit 700 are the same as those described in the above embodiment. The matters are substantially the same, and thus the description thereof is omitted here.
本發明的上述說明僅為示例，於本發明所屬的技術領域內具有常識者應可理解，可不變更本發明的技術思想或必要特徵而容易地變形成其他具體的形態。因此，以上所記述的實施例應理解為於所有方面均為示例，並不具有限定性。例如，說明為單一形態的各構成要素可分散實施，相同地，說明為分散形態的構成要素亦能夠以結合的形態實施。The above description of the present invention is merely an example, and those skilled in the art to which the present invention pertains can be understood, and other specific forms can be easily changed without changing the technical idea or essential features of the present invention. Therefore, the above described embodiments are to be considered as illustrative and not restrictive. For example, it is explained that each constituent element in a single form can be dispersedly implemented, and the constituent elements in a dispersed form can also be implemented in a combined form.
本發明的範圍相較上述詳細說明而由下文將述的申請專利範圍界定，且應解釋為根據申請專利範圍的含義、範圍及其等同的概念導出的所有變更或變形的形態包括於本發明的範圍內。The scope of the present invention is defined by the scope of the claims of the present invention as defined by the appended claims. Within the scope.
1‧‧‧晶圓清洗裝置
100‧‧‧殼體
101‧‧‧上部面
102‧‧‧開口部
110‧‧‧本體部
112‧‧‧回收部
120‧‧‧罩蓋部
200‧‧‧噴射部
210‧‧‧支持部
250‧‧‧噴嘴部
251‧‧‧噴射口
260‧‧‧噴射方向調節部
300‧‧‧晶圓夾盤
310‧‧‧一面
400‧‧‧晶圓驅動單元
500‧‧‧清洗液噴射裝置
510‧‧‧噴嘴構件
520‧‧‧驅動單元
600‧‧‧第一排出單元
610‧‧‧第一排氣管
700‧‧‧第二排出單元
710‧‧‧第二排氣管
800‧‧‧控制部
A1、A2‧‧‧高壓空氣
A3‧‧‧空氣流動層
S1、S3‧‧‧清洗液
S2、S4‧‧‧殼體的外部
X‧‧‧第一方向
Y‧‧‧第二方向
α‧‧‧噴射角度1‧‧‧ wafer cleaning device
100‧‧‧shell
101‧‧‧ upper surface
102‧‧‧ openings
110‧‧‧ Body Department
112‧‧Recycling Department
120‧‧‧ Cover
200‧‧‧Injection Department
210‧‧‧Support Department
250‧‧‧Nozzle Department
251‧‧‧jet
260‧‧‧Spray direction adjustment
300‧‧‧ wafer chuck
310‧‧‧ side
400‧‧‧Wab drive unit
500‧‧‧cleaning liquid spraying device
510‧‧‧Nozzle components
520‧‧‧ drive unit
600‧‧‧First discharge unit
610‧‧‧First exhaust pipe
700‧‧‧Second discharge unit
710‧‧‧Second exhaust pipe
800‧‧‧Control Department
A1, A2‧‧‧ high-pressure air
A3‧‧‧Air flow layer
S1, S3‧‧‧ cleaning solution
S2, S4‧‧‧ exterior of the casing
X‧‧‧ first direction
Y‧‧‧Second direction α‧‧‧ spray angle
圖1是表示本發明的一實施例的晶圓清洗裝置的立體圖。 圖2是本發明的一實施例的晶圓清洗裝置的立體分解圖。 圖3是表示本發明的一實施例的晶圓清洗裝置的方塊圖。 圖4是本發明的一實施例的噴射部的局部立體圖。 圖5是本發明的一實施例的晶圓清洗裝置的剖面圖。 圖6是本發明的一實施例的晶圓清洗裝置的剖面圖。 圖7是本發明的一實施例的晶圓清洗裝置的俯視圖。 圖8是本發明的另一實施例的噴射部的局部立體圖。Fig. 1 is a perspective view showing a wafer cleaning apparatus according to an embodiment of the present invention. 2 is an exploded perspective view of a wafer cleaning apparatus according to an embodiment of the present invention. Fig. 3 is a block diagram showing a wafer cleaning apparatus according to an embodiment of the present invention. Fig. 4 is a partial perspective view of an injection portion according to an embodiment of the present invention. Fig. 5 is a cross-sectional view showing a wafer cleaning apparatus according to an embodiment of the present invention. Fig. 6 is a cross-sectional view showing a wafer cleaning apparatus according to an embodiment of the present invention. Fig. 7 is a plan view of a wafer cleaning apparatus according to an embodiment of the present invention. Figure 8 is a partial perspective view of an injection portion of another embodiment of the present invention.
100‧‧‧殼體 100‧‧‧shell
112‧‧‧回收部 112‧‧Recycling Department
200‧‧‧噴射部 200‧‧‧Injection Department
210‧‧‧支持部 210‧‧‧Support Department
250‧‧‧噴嘴部 250‧‧‧Nozzle Department
251‧‧‧噴射口 251‧‧‧jet
300‧‧‧晶圓夾盤 300‧‧‧ wafer chuck
600‧‧‧第一排出單元 600‧‧‧First discharge unit
700‧‧‧第二排出單元 700‧‧‧Second discharge unit
A2‧‧‧高壓空氣 A2‧‧‧High-pressure air
α‧‧‧噴射角度 Α‧‧‧ spray angle
Claims (12)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??10-2016-0014656 | 2016-02-05 | ||
| KR1020160014656A KR20170093366A (en) | 2016-02-05 | 2016-02-05 | Wafer Cleaning Apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201728377A true TW201728377A (en) | 2017-08-16 |
| TWI641431B TWI641431B (en) | 2018-11-21 |
Family
ID=59499793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105130266A TWI641431B (en) | 2016-02-05 | 2016-09-20 | Wafer cleaning apparatus |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20170093366A (en) |
| TW (1) | TWI641431B (en) |
| WO (1) | WO2017135542A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113967621A (en) * | 2018-06-28 | 2022-01-25 | 许健航 | Centrifugal force-bearing turning or shifting type steam cleaning equipment for plastic toys |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111681969B (en) * | 2020-05-25 | 2023-09-05 | 百克晶半导体科技(苏州)有限公司 | Wafer drying device |
| TWI793539B (en) * | 2021-03-03 | 2023-02-21 | 奇勗科技股份有限公司 | Wafer Cleaning Equipment for Semiconductor Manufacturing |
| CN114682602B (en) * | 2022-06-01 | 2022-09-16 | 沈阳和研科技有限公司 | Water mist suppression structure of full-automatic scribing machine cleaning system |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000066966A (en) * | 1999-04-22 | 2000-11-15 | 윤종용 | Apparatus for cleaning semiconductor wafer |
| JP2002001240A (en) * | 2000-06-15 | 2002-01-08 | Shibaura Mechatronics Corp | Spin processing device |
| KR100466297B1 (en) * | 2002-10-17 | 2005-01-13 | 한국디엔에스 주식회사 | Apparatus for manufacturing semiconductor devices |
| CN101320677B (en) * | 2003-08-25 | 2012-02-01 | 东京毅力科创株式会社 | Method for cleaning elements in vacuum chamber and apparatus for processing substrates |
| JP5151629B2 (en) * | 2008-04-03 | 2013-02-27 | 東京エレクトロン株式会社 | Substrate cleaning method, substrate cleaning apparatus, developing method, developing apparatus, and storage medium |
| US20130068264A1 (en) * | 2011-09-21 | 2013-03-21 | Nanya Technology Corporation | Wafer scrubber apparatus |
| US9484229B2 (en) * | 2011-11-14 | 2016-11-01 | Lam Research Ag | Device and method for processing wafer-shaped articles |
| JP6351374B2 (en) * | 2014-05-22 | 2018-07-04 | 株式会社ディスコ | Cleaning device and processing device |
-
2016
- 2016-02-05 KR KR1020160014656A patent/KR20170093366A/en active Search and Examination
- 2016-09-06 WO PCT/KR2016/009944 patent/WO2017135542A1/en active Application Filing
- 2016-09-20 TW TW105130266A patent/TWI641431B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113967621A (en) * | 2018-06-28 | 2022-01-25 | 许健航 | Centrifugal force-bearing turning or shifting type steam cleaning equipment for plastic toys |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017135542A1 (en) | 2017-08-10 |
| KR20170093366A (en) | 2017-08-16 |
| TWI641431B (en) | 2018-11-21 |
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