CN101320677B - Method for cleaning elements in vacuum chamber and apparatus for processing substrates - Google Patents
Method for cleaning elements in vacuum chamber and apparatus for processing substrates Download PDFInfo
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- CN101320677B CN101320677B CN2008101280502A CN200810128050A CN101320677B CN 101320677 B CN101320677 B CN 101320677B CN 2008101280502 A CN2008101280502 A CN 2008101280502A CN 200810128050 A CN200810128050 A CN 200810128050A CN 101320677 B CN101320677 B CN 101320677B
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Abstract
To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.
Description
The application be that August 25, application number in 2004 are 200410057032.1 the applying date, denomination of invention divides an application for the patent application of " method for cleaning elements that reduced pressure treatment is indoor and substrate board treatment ".
Technical field
The present invention relates to clean the technology of the indoor parts of reduced pressure treatment, for example, relate to the technology that cleaning is placed the workbench be processed substrate etc.
Background technology
At the semiconductor or the FPD (flat-panel monitor: in manufacturing process Flat PanelDisplay), prevent that the microparticle of outside manufacturing installation, sneaking into or in manufacturing installation, produce from being a problem to the pollution that is processed substrate of liquid crystal indicator etc. for example.Particularly, when the workbench in being installed in decompression process chamber was polluted by microparticle, microparticle in next operation, polluted expansion attached to the back side of putting substrate above that, the result, and it is defective to produce resultant articles.
Fig. 1 representes the skeleton diagram of general plasma-etching apparatus.Configuration is placed and is processed the workbench 2 that substrate is used in as the chamber 1 of decompression process chamber.As the high frequency electric source 3 of bias supply, be connected with workbench 2 through capacitor 4, in addition, the Electrostatic Absorption power supply 5 that is used for the clamping substrate is connected with workbench 2 through low pass filter 6.Decompression process chamber ground connection has upper electrode 7 above.The surface of workbench 2 utilizes to add direct voltage from Electrostatic Absorption power supply 5, the sorption semiconductor substrate with coverings such as aluminium oxide or polyimides.Configuration focusing ring 8 surrounds the substrate of placing on the periphery of workbench 2.This focusing ring is and the annular plate of substrate same material, can the plasma that produced be remained on the substrate.Handle of gas entrance hole 10 importings of the gas of usefulness from the shower head 9 of workbench upper space.In addition, do not illustrate among the figure, also have the chamber depressurization of making or become the pump that vacuum is used.Microparticle P is attached on the workbench 2.
When in above-mentioned decompression process chamber, handling; Semiconductor substrate (not illustrating among the figure) is placed on the workbench 2, adds the voltage of Electrostatic Absorption power supply 5, keep this semiconductor substrate through Electrostatic Absorption; Again from the gas entrance hole 10 of shower head 9; The reactant gas of processing usefulness is imported in the chamber 1, utilize from high frequency electric source 3 supply capabilities and produce plasma, carry out predetermined process.At this moment, when microparticle P attached to 2 last times of workbench, it is attached on the back side that is processed substrate, in next operation, pollutes and enlarges, and simultaneously, produces the problems such as finished semiconductor device product rate reduction that make final manufacturing.
This microparticle has plenty of to be brought into outside process chamber, also has in process chamber, is peeled off by workbench and contacting of semiconductor substrate, be in addition the product accumulation that produces because of reactant gas etc.Open for example spy and to have proposed in the 2002-100567 communique to clean with brush scraper plate or Wiper plate, or spray the method that the liquid that cleans or gas clean in order to keep workbench cleaning.
Yet, owing to adopt this clean method will open the lid of chamber usually, and exposed to weather, like this, cleaning itself just becomes the reason of pollution.Under reduced pressure, utilize brush scraper plate or Wiper plate that microparticle (for example particle diameter is several 10nm) is not had effect, and the friction of physics also can increase microparticle.In addition, with liquid cleaning works platform, its complex structure, productivity ratio reduces significantly.In addition, with the method for air blowing body,, be difficult to accomplish sufficient cleaning because the conflict sectional area of microparticle and gas is very little.
Summary of the invention
The present invention considers this problem and proposes; Its objective is the substrate board treatment that a kind of method for cleaning elements that microparticle is dispersed remove from the indoor parts surface of reduced pressure treatment effectively will be provided, have the device of realizing this clean method; Keep watch on the microparticle checkout gear that disperses of cleaning, the cleannes evaluation method is accomplished detection method with cleaning.
In order to address the above problem according to the embodiment of the present invention 1, voltage is added on the parts that are attached with microparticle, poor according to the dielectric constant of the dielectric constant of above-mentioned parts and above-mentioned microparticle makes attached to the microparticle on the above-mentioned parts and disperses.
According to the embodiment of the present invention 2 make attached to the above-mentioned microparticle on the above-mentioned parts charged; Be added on the above-mentioned parts with the voltage that polarity is identical with the charged particles of above-mentioned microparticle, make attached to the above-mentioned microparticle on the above-mentioned parts and disperse.
According to the embodiment of the present invention 3, decompression process chamber is remained on the pressure of regulation, import gas, make the gas percussion ripple arrive the parts that are attached with microparticle, microparticle is dispersed.
According to the embodiment of the present invention 4, control is attached with the temperature of the parts of microparticle, utilizes thermal stress and thermophoresis power, and microparticle is dispersed.
According to the embodiment of the present invention 5, mechanical oscillation are given and the parts that are attached with microparticle, microparticle is dispersed.
According to the embodiment of the present invention 6, maintain 1.3 * 10 at pressure with decompression process chamber
3Under the state more than the Pa (10Torr), microparticle is dispersed, utilize gas stream to remove microparticle.
According to the embodiment of the present invention 7, maintain 1.3 * 10 as pressure with decompression process chamber
3More than the Pa (10Torr), utilize gas stream, remove the last stage of microparticle, make pressure 1.3 * 10
2Below the Pa (1Torr), microparticle is dispersed.
According to the embodiment of the present invention 8, maintain 1.3 * 10 at pressure with decompression process chamber
3More than the Pa (10Torr), utilize gas stream, make under the situation that microparticle disperses, again mechanical oscillation are given and the microparticle that disperses.
According to the embodiment of the present invention 9, heat above-mentioned parts, remain under the state of high temperature, simultaneously or carry out continuously: above-mentioned decompression process chamber is remained on authorized pressure, import gas, make the gas percussion ripple arrive the step of above-mentioned parts; With the step that high voltage is added on the above-mentioned parts.
10 substrate board treatments that provide through from above-mentioned Electrostatic Absorption power supply voltage being given and not placed the workbench that is processed substrate, make attached to the microparticle on the above-mentioned workbench and disperse according to the embodiment of the present invention.
11 a kind of substrate board treatment is provided according to the embodiment of the present invention; Through above-mentioned decompression process chamber is remained under the authorized pressure; From the above-mentioned gas ingress pipe gas is imported and not place on the above-mentioned workbench that is processed substrate; Make the shock wave of this gas arrive above-mentioned workbench, make attached to the microparticle on the above-mentioned workbench and disperse.
12 a kind of substrate board treatment is provided according to the embodiment of the present invention; It is from importing gas the gas introduction tube above the workbench; Flow into the gas that this head of cooling is used; Utilize heater to be heated to set point of temperature with not placing the workbench that is processed substrate, make attached to the microparticle on the above-mentioned workbench and disperse.
According to the embodiment of the present invention 13 a microparticle at random is provided checkout gear, it has: incident light is incident in the above-mentioned decompression process chamber, with the light source through above-mentioned upper parts of components space; Photodetector with the scattered light angle configurations that becomes regulation with above-mentioned incident light, that the above-mentioned microparticle of detection causes.
In addition, according to the embodiment of the present invention 14,15, provide cleannes evaluation method and the decision means cleaning that cleaning is accomplished to accomplish detection method, it can estimate the cleannes of the indoor parts of reduced pressure treatment according to detecting the scattered light that causes because of microparticle.
Description of drawings
Above-mentioned purpose of the present invention and characteristic, will further be understood with reference to the explanation of accompanying drawing to preferred implementation from following.
Fig. 1 is the figure of the applicable existing plasma processing apparatus of the present invention of expression.
Fig. 2 utilizes maxwell (MaxWell) stress, the figure of the experimental result of the microparticle that disperses for being illustrated in the execution mode 1 of the present invention.
Fig. 3 adds square-wave voltage for being illustrated in the execution mode 1 of the present invention, makes the figure of the experimental result that microparticle disperses.
Fig. 4 is for being illustrated in the execution mode 1 of the present invention, the figure of the image of the laser light scattering light that is produced by the microparticle that disperses.
Fig. 5 is for being illustrated in the execution mode 1 of the present invention the key diagram of the laser and the relation of the microparticle that disperses.
Fig. 6 is for being illustrated in the execution mode 1 of the present invention, with respect to the figure of the alive microparticle number that disperses.
Fig. 7 is for being illustrated in the execution mode 6 of the present invention the figure that the microparticle that the gas percussion ripple of certain pressure causes disperses.
Fig. 8 is for being illustrated in the execution mode 6 of the present invention, the figure that the microparticle that is caused by the gas percussion ripple of another pressure disperses.
Fig. 9 is for being illustrated in the execution mode 6 of the present invention, the figure of the microparticle amount of dispersing that is caused by continuous gas percussion ripple.
Figure 10 is for being illustrated in the execution mode 7 of the present invention, the figure of the microparticle amount of dispersing that is caused by heating.
Figure 11 is the skeleton diagram of the microparticle checkout gear that disperses in the expression execution mode 11 of the present invention.
Figure 12 is the figure of the effect of the ultrasonic vibration of expression execution mode 8 of the present invention.
Figure 13 is the skeleton diagram of the plasma processing apparatus of expression execution mode 12 of the present invention.
Figure 14 is the flow chart of the clean method of expression execution mode 12 of the present invention.
Figure 15 is the figure of the relation of the cavity indoor pressure that causes of clean method of expression execution mode 12 of the present invention and microparticle number.
Figure 16 is the flow chart of the clean method of expression execution mode 13 of the present invention.
Figure 17 is the figure of the effect of the pre-treatment of expression execution mode 13 of the present invention.
When the microparticle of band pre-treatment that Figure 18 carries out execution mode 13 of the present invention for expression is removed, the figure of the microparticle number on the wafer and the relation of the number of times of removing microparticle.
Figure 19 is the figure of a step of the clean method of expression execution mode 14 of the present invention.
Figure 20 is the figure of translational speed with the relation of the microparticle that disperses of expression execution mode 14 of the present invention.
Embodiment
Before explanation execution mode of the present invention, principle of the present invention is described.The absorption affinity of inventor's dissection of the present invention between microparticle and workbench; Research overcomes absorption affinity; Make microparticle peel off the method for dispersing and find to use (1) Maxwell's stress from workbench; (2) power that causes of gas percussion ripple, the combination that (3) thermal stress and thermophoresis power or it are given produces effect.That is: when giving these power with workbench or microparticle, obtain microparticle and can peel off the experimental result of dispersing from workbench effectively.In order to confirm the microparticle that disperses, utilize laser scattering method.
(1) utilization of Maxwell's stress
The present inventor obtains the experimental result alone that the microparticle on the workbench surface disperses when voltage being added on the Electrostatic Absorption workbench, and finds that this is caused by Maxwell's stress.
Maxwell's stress does
In the formula: ρ-quantity of electric charge,
The E-electric field,
ε-dielectric constant,
τ-density.
First charged Coulomb force that causes of expression microparticle of following formula.Second is; Because
is the differential based on the dielectric constant position; Therefore its expression produces negative power when there is electric field action in the place in change in dielectric constant.The 3rd expression has rubber etc. because distortion etc. act on dielectric constant with respect to the power on the material of density τ variation in this material; Under the situation of the microparticle in considering semiconductor-fabricating device; Think that the 3rd can be ignored, and therefore, can utilize the power of first and second expression.
(2) utilization of the power that causes of gas percussion ripple.
Carry out gas is blown the result of experiment explanation on workbench, the body of only merely blowing can not make microparticle disperse effectively, can microparticle dispersed under certain condition.For example, 1.3 * 10
-2Pa (1 * 10
-4Torr) under the pressure environment below,, can microparticle be dispersed through import a large amount of gas quickly.The result who resolves finds, imports a large amount of gases through having big pressure differential quickly, can produce the shock wave that is caused by pressure differential like this, when shock wave arrives the workbench surface, can microparticle dispersed.Therefore, can effectively utilize the masterpiece that the gas percussion ripple produces is to disperse to remove the instrument of the microparticle on the workbench.
(3) utilization of thermal stress and thermophoresis power
Use the device of the temperature of Control work platform, the temperature through making workbench fully raises or reduces from common serviceability temperature, can bring out the microparticle that is caused by thermal stress and peel off.In addition, workbench is kept at high temperature, kept the pressure of regulation, also can utilize the thermophoresis power of generation, microparticle is dispersed from workbench.Like this, for the cleaning platform, can utilize thermal stress or thermophoresis power.In these experiments, utilize (in-situ) on the spot microparticle of laser scattering method to measure.This device can use in the cleannes monitor of workbench etc.
Below, according to accompanying drawing execution mode of the present invention is described.Describe as an example with plasma-etching apparatus, but the present invention only limits to this, in all devices, also can use with the workbench that is placed to substrates such as film device.In addition, workbench neither only limit to place the workbench of semiconductor substrate, with the substrate of liquid crystal indicator etc. arbitrarily substrate be that object is also passable.In addition, be an example as the workbench of cleaning object, can the reduced pressure treatment indoor any parts of the present invention are as the cleaning object.
(execution mode 1)
This execution mode is under the big situation of the dielectric constant difference of the dielectric constant on workbench surface and microparticle, utilize the Maxwell's stress formula second, on the workbench surface, produce the electric field of regulation, and utilize the repulsion of generation, microparticle is dispersed.
That is: be placed on workbench and go forward will being processed substrate, as shown in Figure 1, the voltage of plus or minus is added on the workbench from the Electrostatic Absorption power supply.Dielectric medium through the workbench surface manifests electric field from the teeth outwards.The electric field strength on workbench surface has relation with dielectric constant and the thickness of the dielectric medium on workbench surface, yet, according to experiment, demonstrate and the voltage of the roughly the same degree of voltage of giving, there be not the decay of discovery based on the electric field strength of dielectric medium.According to the Maxwell's stress formula, when under the differentiated situation of dielectric constant of the dielectric constant on workbench surface and microparticle, to electric field the time, microparticle should receive the power of dispersing in the power line direction.
The list of having represented experimental result among Fig. 2.Experimental selection different materials shown in Figure 2 is that microparticle is taken as SiO as workbench with particle
2With two kinds in the polymer of CF system, detect its amount of dispersing.Mostly the amount of dispersing significantly is that workbench is naked silicon (DIELECTRIC CONSTANTS=11); Microparticle on it (particle) is the situation of the deposit (DIELECTRIC CONSTANTS=2) of fluorocarbons (CF) based polymer; With workbench be aluminium oxide (DIELECTRIC CONSTANTS=9), the microparticle on it (particle) is the situation of the deposit of fluorocarbons (CF) based polymer.The difference of their dielectric constant all is 9 or 7 so big.Under the situation that other dielectric constants equate or difference is little, the amount of dispersing does not almost have or seldom.
The naked silicon (ベ ア シ リ コ Application) that Fig. 3 representes to pile up with the CF based polymer is as workbench, added+result during the square wave of 2500V by the Electrostatic Absorption power supply.What solid line was represented is the waveform of Electrostatic Absorption voltage, and what bullet was represented is the microparticle number.In alive moment, there is many (more than 60) microparticle to disperse.
Like Fig. 4 and shown in Figure 5, the microparticle that disperses laser light scattering capable of using detects.Fig. 4 on the naked silicon of piling up the CF based polymer, add+during 2500V, take the image of the microparticle that disperses.It representes that a plurality of microparticles disperse from the workbench surface.As shown in Figure 5, photography be with laser as the light beam on the flat board, be radiated at the place about 3～4mm on the workbench, use the image of CCD camera from the side.
Fig. 6 makes the change in voltage that is added on the workbench, makes the figure of the microparticle that disperses.Transverse axis is added high voltage, and the longitudinal axis is the microparticle number.When 1000V, can't see and disperse, when 2000V, have the microparticle about 10 to disperse, when 2500V, have the microparticle more than 60 to disperse.In order to make the microparticle added voltage swing that disperses; With the dielectric constant of the dielectric constant of the dielectric medium on workbench surface and thickness, microparticle with big or small relevant; Under the situation on the Electrostatic Absorption workbench on the aluminium oxide ceramics surface that the microparticle of fluorocarbons system uses in attached to plasma-etching apparatus; If add the voltage that about ± 1 500V is above, microparticle is dispersed remove.
In addition,, can make gas inflows such as nitrogen, and utilize pump to suck gas, make the microparticle that disperses, along with gas flow is discharged at this moment in order to remove the microparticle that disperses effectively.In the bright enforcement of following explanation, can adopt to make gas flow into the method for discharging the microparticle that disperses.
Here, for making alive uses electrode for electrostatic attraction, also can have special-purpose power supply.And for example the above, the institute alive polarity is positive and negative can.Like this, before processing substrate, when substrate is not on workbench, adopt this method, can prevent that microparticle is attached to substrate back.
(execution mode 2)
As implement shown in the mode 1, under the dielectric constant condition of different of utilizing workbench surface and microparticle, in order to improve effect, the abundant big material of dielectric constant with microparticle that permittivity ratio estimates to adhere to capable of using covers the workbench surface.Generally, pollute at the microparticle that adheres to silicon under the situation on workbench surface,,, can obtain bigger effect if cover the workbench surface with following permittivity ratio 11 big a lot of materials because the dielectric constant of silicon is about 11.
For example: Bi
2O
3(dielectric constant is 18.2), CuO (dielectric constant is 18.1), FeO (dielectric constant is 14.2), KH
2PO
4(dielectric constant is 46), KIO
3(dielectric constant is 16.85), PbBr
2(dielectric constant＞30), PbCl
2(dielectric constant is 33.5), PbCO
3(dielectric constant is 1 8.6), PbI
2(dielectric constant is 20.8), Pb (NO
3)
2(dielectric constant is 16.8), PbO (dielectric constant is 25.9), PbSO
4(dielectric constant is 14.3), SrSO
4(dielectric constant is 18.5), TiO
2(dielectric constant is 85.6～170), TlBr (dielectric constant is 30.3), TlCl (dielectric constant is 31.9), TlI (dielectric constant is 21.8), TlNO
3(dielectric constant is 16.5), cyclohexanol (dielectric constant is 16.0), succinonitrile (dielectric constant is 65.9) etc.
(execution mode 3)
In execution mode 1, act on the power on the microparticle, during making alive, all work, and as shown in Figure 3, in the time of change in voltage (particularly alive), microparticle disperses very many.Owing to utilize this point, can make institute's making alive as square wave, continuous is added on the workbench.Like this, when making alive, when stopping, can microparticle be dispersed.In order to promote microparticle to disperse, the variation of voltage is not limited only to square wave, and the shape of ripples such as impulse wave, sine wave can be any.
Reason is, when initial making alive, the microparticle that disperses has easily dispersed, even the microparticle that does not disperse is arranged, through at one end removing added voltage, adds new voltage, the chance that can disperse.In addition, utilize the interchange of AC power also can obtain same effect.The frequency that exchanges is high more, and effect is big more.
(execution mode 4)
This execution mode is to utilize the Coulomb force that microparticle is dispersed., can not utilize second power of Maxwell's stress formula, and will utilize first Coulomb force about equally under the situation of (approaching) at the dielectric constant of workbench and microparticle.That is: make the microparticle on the workbench charged wittingly, will be added on the workbench, utilize the mutual expelling force of static and disperse with the charged identical voltage of polarity of microparticle.In order to make the microparticle on the workbench charged, be not placed at substrate under the state of workbench, in upper space, generate plasma.The charged particle of the plasma that generates arrives on the workbench, makes microparticle charged.In this case, generate the used gas of plasma and can adopt argon, helium, oxygen, nitrogen etc., must be the material of not etching workbench material in essence.In addition, the essential Control Parameter (power, pressure, flow etc.) of selecting, making can be because of physical sputter etching workbench surface.
Because workbench utilizes automatic bias voltage and electronegative, therefore, the microparticle on the workbench is electronegative.Therefore, through negative voltage is added on the workbench, microparticle is dispersed from substrate.
(execution mode 5)
In execution mode 4, utilize plasma, make attached to the microparticle on the workbench electronegatively, but being not only, the charged method of microparticle is limited to this.For example, utilize ultraviolet light, vacuum-ultraviolet light irradiation, emit photoelectron, and the positively charged method; Or utilize the method for ion exposure band plus or minus electricity; Utilize X ray, grenz ray irradiation ejected electron and the method for positively charged etc., these methods can be used arbitrarily.Utilize to make microparticle charged someway, through being added in the voltage of this charged same polarity on the workbench, maybe microparticle dispersed again.
(execution mode 6)
The present inventor tests: at short notice that atmospheric pressure is big or small gas imports in large quantities and remains on 1.3 * 10
-2Pa (1 * 10
-4Torr) in the pressure-reducing chamber with downforce about,, make this shock wave arrive the microparticle on workbench, can microparticle dispersed by the shock wave of the maximum velocity of sound of pressure differential generation., uses gas the exhaust pump exhaust in importing usually.
For example, for the naked silicon that is configured in the decompression process chamber, microparticle is SiO
2, import N with the pressure about atmospheric pressure
2Gas.Utilize the shower head on the workbench to import N
2Gas.Utilize the leakage of chamber that the pressure of workbench decompression process chamber is boosted.Fig. 7 and Fig. 8 represent to import N
2The result's of gas a example.
Fig. 7 representes that the pressure of decompression process chamber is 6.7 * 10
-2Pa (5.0 * 10
-4Torr) time, the dispersing of microparticle.Fig. 8 is illustrated in 1.3 * 10
2Pa (1 * 10
-0Torr) microparticle is at random under.What obtain here is from N
2Conductance is gone into the laser light scattering image in 3 seconds.
For most microparticles are dispersed, essential pressure is 1.3 * 10
-2Pa (1 * 10
-4Torr) below, 1.3 * 10
2Pa (1 * 10
-0Torr) under, the effect that microparticle is dispersed does not almost have.In addition, also test: after importing gas, cause that microparticle disperses, 60～70% of all microparticles disperse.
Fig. 9 is checking N
2The experimental result of the effect of dispersing that gas causes.Same with previous example, it is illustrated in SiO
2As microparticle attached to after on the naked silicon, 1.3 * 10
-2Pa (1 * 10
-4Torr) import N down
2The result of gas.At this moment, obtain the scattered light of microparticle, utilize brightness value to estimate the amount of microparticle.The longitudinal axis representes that total gray-level value is a scattering strength.Import dispersing of causing through experiment and initial gas, make all 60～70% the dispersing of microparticle, when imported the second time, microparticle dispersed on a small quantity, disperses hardly when importing gas for the third time.Therefore, utilize to import gas and disperse and remove microparticle, it is just passable only to carry out secondary.
The gas that imports can use gas arbitrarily such as nitrogen, oxygen, argon.In addition, the shape and the place of essential configuration entrance hole make shock wave can arrive microparticle.Importing under the situation of gas from shower head, thin hole is intensive, and the quantity of opening is many, and the shock wave that therefore sends from shower head can influence whole workbench, and effect is best.Even the use shower head, as stated, 60～70% of all microparticles disperse and have shown significant effect.
(execution mode 7)
This execution mode utilizes thermal stress or thermophoresis power, adopts Control work platform method of temperature, heats up greatly or lowers the temperature from common serviceability temperature through making workbench, brings out the microparticle that is produced by thermal stress and peels off.In addition,, keep the pressure of regulation, can utilize the thermophoresis power of generation, make microparticle away from workbench through workbench is maintained high temperature.
So-called thermophoresis is moving to be the object in having the gas of temperature gradient, accepts to receive and the reciprocal power of temperature gradient than from the big amount of exercise of the molecule of low temperature side from the molecule of high temperature side, surveys the phenomenon that direction moves to low temperature.Thermophoresis power is decided by cavity indoor pressure, and is relevant with the temperature gradient of microparticle near surface.
Figure 10 is expression heating work platform, makes the figure of the experimental result that microparticle disperses.This experiment is to adhere to SiO
2The Si of particle experimentizes as workbench.At pressure is 1.3 * 10
2Under the Pa (1Torr), because the shower head on workbench top is kept low temperature, shower head imports N from top
2Gas.Transverse axis is represented temperature difference, and the longitudinal axis is illustrated in the granule number of inside counting in 1 minute.Can find out that from figure from about the 50 ℃ moment of rising, microparticle begins to disperse, and when surpassing 250 ℃, has a considerable amount of microparticles to disperse.
According to pressure is changed, another experiment of heating under 1.3Pa (0.01Torr), almost cannot see and is dispersed simultaneously, therefore, can find out that thermophoresis power is very big to the microparticle influence of dispersing.In addition, can find out that the microparticle that disperses has initial velocity, peel off that thermophoresis power disperses microparticle by the force action of thermal stress and thermophoresis power according to another experiment.In this execution mode, N
2Conductance is gone in the shower head as upper electrode, increases temperature gradient, utilizes additive method also passable.
(execution mode 8)
Through ultrasonic vibration being given and the workbench surface, impel dispersing of microparticle.That is: utilize ultrasonic vibration can weaken microparticle attached to the power on the substrate.Therefore, except execution mode 1～7,, can microparticle be dispersed through giving and ultrasonic vibration.Give the method with ultrasonic vibration, can piezoelectric element be continued with workbench applies voltage method with the individual part that is connected of hard headed by, can adopt appropriate method.
In addition, only give and mechanical oscillation as ultrasonic vibration, microparticle is dispersed or peel off.Figure 12 makes the experimental example of the effect that microparticle disperses for expression utilizes ultrasonic vibration.It is the result who detects with scanning microparticle detector (scanning particle detector), and transverse axis is the time among the figure, and the longitudinal axis is the signal that calculates with detector.Can find out that from figure when detecting beginning, detect the residual microparticle in the winding displacement pipe, the microparticle that little by little detects reduces.Simultaneously, during illustrated (about 30 seconds～130 seconds with about 150～180 seconds), when giving, there is the microparticle that surpasses the microparticle number that obtains when detecting beginning to peel off or disperse with ultrasonic vibration.Do not needed special decay with hyperacoustic time, can be produced microparticle off and on.Because do not give hyperacoustic time, almost there is not microparticle to produce, therefore can find out to big with hyperacoustic effect.
In addition, do not give and ultrasonic wave, and move, give and mechanical oscillation, the microparticle that adheres to is dispersed or peel off through parts.Particularly the most cases lower table can move up and down in process chamber, when stopping in travelling table or after moving, produces mechanical oscillation, microparticle is dispersed or the effect peeled off big.This point specifies afterwards.
(execution mode 9)
Through the method combination that will explain so far, the effect that the microparticle that can be removed multiplies each other.All possible method combination is also passable, selectively the several method combination also can.The method of combination is arbitrarily, if can implement simultaneously, then implements simultaneously, sequentially implements also can.If do not implement simultaneously, order is implemented also can.In addition, these execution modes carry out the combination of execution mode repeatedly repeatedly, can obtain big effect.
For example, adopt at first to import gas, the power that shock wave causes is given and microparticle (execution mode 6), add high voltage (execution mode 2 and 3) then, the method for heating work platform (execution mode 7) also can be used it repeatedly during this period.It is also passable to carry out these methods simultaneously, carries out repeatedly and also can.Particularly as stated, can the second use shock wave.
(execution mode 10)
In execution mode 1～9, the clean method of workbench has been described, the parts that are attached to workbench for focusing ring etc. also are suitable for, and can obtain same effect.Parts for the indoor essential cleaning of reduced pressure treatment also are suitable for.Also can obtain same effect.
(execution mode 11)
During the embodiment of the present invention method, utilize microparticle checkout gear shown in Figure 11, detect dispersing of microparticle, can carry out the cleannes evaluation of workbench.Through detecting microparticle below defined amount, end that can testing platform cleaning.
Figure 11 representes to utilize the microparticle checkout gear that disperses of laser light scattering light.In decompression process chamber 100, has the workbench 110 of placing substrate.Laser R from lasing light emitter 20 sends through optical systems such as laser 30, is incident on treatment chamber from entrance window 120.Laser R forms the light beam on the flat board through optical system 30 in the upper space of workbench 110.Laser R straight ahead on workbench, the scattered light S after the microparticle scattering of being dispersed by the inventive method through exit window 130, is incident on the CCD camera 40.The light of straight ahead on workbench 110 incides light beam damper 140 and is absorbed.The scattered light S that is incident on the CCD camera 40 is transformed to electric signal, in the signal processing apparatus 50 of input personal computer that kind, on display part 51, shows the image of the particle that disperses.In the present example, obtain the image that changes as animation, also can obtain static picture and resemble.In addition, the control information of sending from processing unit controller 60 is through A/D converter 70, in the input information processing unit 50.Information processor 50, according to this information, through pulse generator 80, control LASER Light Source 20 and CCD camera 40.
Control is incident on the laser R in the process chamber 100, makes it be incident on the position of catching the microparticle that disperses reliably.For near the microparticle that disperses the testing platform, for example be that laser is the light of 3～4mm height on workbench, in order to detect, can incident cover the light of the height of this eminence part above this microparticle that disperses more than height.
In addition, light source is not to be limited to LASER Light Source, can use lamp, and photodetector also can be device arbitrarily such as photomultiplier.As the CCD camera of detector, should be configured to catch the scattered light S with incident light R vertical direction, it is also passable to be configured to have other angles, becomes suitable angle also passable a plurality of detector configurations.
Fig. 4,7 and 8 is the photography example.Can find out that the microparticle that disperses is clearly caught.
(execution mode 12)
Be clipped in the clean of removing in the gas stream through peeling off attached to the microparticle on the chamber wall, studying.For microparticle is entrained in the gas stream, must cavity indoor pressure be remained on certain pressure (1.3 * 10
3Pa (10Torr)) more than.Peeling off the microparticle stage, can use arbitrary method of the present invention, but having in the vacuum chamber of mechanism of Electrostatic Absorption wafer, adopting to utilize to add the Maxwell's stress that high voltage produces, peeling off the method for microparticle in treatment chamber etc.In addition, as vacuum chamber, beyond treatment chamber, also have the load-lock assembly, pass on chamber, box chamber equal vacuum delivery chamber.
Figure 13 representes to implement the example of device of the clean of this execution mode.Figure 13 is for abridged breather line in the appended drawings 1 and gas extraction system and load the figure of the plasma-etching apparatus of the gate that wafer uses.The part that the symbolic representation identical with Fig. 1 is identical.The vent line 13 of this execution mode is for making N
2Stream Deng the mobile usefulness of clean air is made up of pipeline and valve, does not have the such small structure of volume control device.In addition, use, at this moment, import clean air from shower head 9 but vent line 13 double as import the stream of reacting gas.In this case, in stream, small structure is not set as vent line.When small structure, can hinder gas flow, can not produce shock wave.Gas extraction system has the turbomolecular pump (TMP) 14 as main pump, has the dried pump (DP) 15 that extracts with pump as thick behind at it.In addition, be provided with wafer and move into the gate 17 of taking out of usefulness.
Figure 14 representes the clean order of this execution mode.Handle beginning, at first, in step S1, through closing automatic pressure control valve (APC) (not illustrating among the figure), close the primary exhaust conduit of turbine pump 14, the thick extraction of opening dried pump (DP) 15 is with pipeline 16.
Secondly, in step S2, the big flow so that 70000cc/ divides imports N from vent line 13
2Gas.From vent line 13 a large amount of N that import
2Gas sharply rises pressure, and the microparticle in the chamber 1 is peeled off.The microparticle of peeling off is discharged from thick extraction pipeline 16.
In step S3, according to performance and the N of thick extraction with pump 15
2Flow, cavity indoor pressure is stabilized on the value.In step S4, under this state,, add the high voltage of plus or minus repeatedly to workbench by Electrostatic Absorption power supply 15.For example, add repeatedly+3kV and 0V.As discussed previously, according to Mace gram Wei Yingli, peel off attached to the microparticle of chamber inner wall.Microparticle of peeling off and N
2Gas is discharged together.In step S5, when the adding dc high voltage and finish of stipulated number, stop to import N
2Gas.Because thick the extraction with pipeline opened, and then slightly extracts.
In step S6, close the valve of thick extraction pipeline, open APC, in main vacuum-pumping pipeline, utilize turbine pump 15 to be evacuated to authorized pressure (for example 1.3 * 10
-2Pa (0.1mTorr)).As required, can carry out this flow process integral body repeatedly.
In order to confirm the effect of this clean method, cavity indoor pressure is changed, utilize the laser scattering method described in the execution mode 11, detect microparticle number through gas exhaust piping (slightly extracting pipeline).The result is illustrated among Figure 15.
Transverse axis is the pressure in the chamber among Figure 15, is the calculating number of microparticle (being particle) on the longitudinal axis.From this figure, can find out,, in gas exhaust piping, not count to microparticle fully when cavity indoor pressure during less than about 1333.22Pa (10Torr).From surpassing about 1333.2Pa, can count to microparticle, below, along with cavity indoor pressure raises, the microparticle of removing increases.
Less than about 1333.22Pa (10Torr) time, there is not microparticle to pass through gas exhaust piping, explain under the low situation of pressure, give little with the gas viscosity power of microparticle.Therefore, in order to discharge microparticle, cavity indoor pressure is high more, and effect is big more.For example 6.7 * 10
3Implement preferred in Pa (50Torr) or the above press belt.
The method of in step S4, implementing of peeling off microparticle is to utilize the high voltage of Maxwell's stress to apply, but not in this way, uses above-described any microparticle stripping means also passable.That is: utilize the Coulomb force also passable; The shock wave that utilizes rapid importing gas to cause is also passable; Control work platform temperature utilizes thermal stress or thermophoresis power also passable; Also can with mechanical oscillation.
(execution mode 13)
In execution mode 12, for being clipped in the gas stream, microparticle discharges, in the atmosphere of elevated pressures, apply the high voltage of peeling off microparticle.Yet, in order to effectively utilize, peel off or the microparticle that disperses by adding the Maxwell's stress that high voltage produces, it is higher under low-pressure atmosphere, to carry out efficient.In addition, of enforcement mode 6, utilize shock wave that microparticle is dispersed, under lower pressure, carry out the efficient height.
In this execution mode,, after under low pressure importing clean air in advance or adding high voltage, implement the cleaning process of execution mode 12 as pre-treatment.That is: in pretreatment stage, under low pressure atmosphere, microparticle is peeled off from chamber inner wall, then, improved pressure, the microparticle of peeling off is discharged.Like this, peeling off of microparticle is effective, and it is effective to remove the microparticle of peeling off.
Figure 16 representes the flow chart of the pre-treatment of this execution mode.When the beginning pre-treatment, at first in step S11, the pressure that uses when cavity indoor pressure is controlled to be actual treatment (for example 0.2Pa (150mTorr)) imports N
2Gas.Re-use primary exhaust conduit, utilize turbine pump 14 vacuum exhausts, under authorized pressure, keep this state.In this case, the microparticle that is caused by impulsive force is peeled off bigger.
Secondly, in step S12,, utilize the high voltage that adds of Maxwell's stress in order to peel off microparticle attached to chamber inner wall.It is identical with the step S4 of Figure 13 to increase voltage method.Step S4 cavity indoor pressure with respect to Figure 13 is 6.7 * 10
3Pa (50Torr)), be 2.0Pa (0.15Torr) in the current pre-treatment.
In step S13, stop to import N
2Gas is evacuated to 1.3 * 10 with turbine pump
-2About Pa (0.1mTorr).As required, repeat this processing once more.Behind stipulated number repeatedly, when pre-treatment finishes, move to the flow process of Figure 14 (execution mode 12).Owing to carry out this pre-treatment, when getting into this processing of execution mode 12, compare with the situation of not carrying out pre-treatment, the more microparticle of can peeling off or disperse can be removed more microparticle.
Method as peel off microparticle in this pretreatment stage has been explained the high voltage that adds that utilizes Maxwell's stress, can be without this method, and utilize the Coulomb force also passable; Utilize the shock wave that sharply imports the gas generation also can; Control work platform temperature utilizes thermal stress or thermophoresis power also passable, also can with mechanical oscillation.
Figure 17 sees the figure how the microparticle number changes for not carry out and to carry out under the situation of pre-treatment.Transverse axis among the figure is actual etch processes number of times, the granule number that the wafer that the longitudinal axis is represented is remaining (being the microparticle number).The A-stage of number of times 1 expression chamber, microparticle adheres to nearly 3000.To number of times 7, do not have the microparticle of pre-treatment to remove processing later on, carry out actual etch processes again, between number of times 7 to number of times 8, do not remove microparticle, remove processing with the microparticle of pre-treatment from number of times 8 to number of times 11.
According to Figure 17, when the microparticle that does not have pre-treatment was repeatedly removed processing, the microparticle number can be reduced to about 1000, even increase number of processes, reduced also being no more than this number.The experiment that links to each other in same chamber later on after getting back to the A-stage shown in the number of times 8, is removed processing with the microparticle of pre-treatment not carrying out the condition that microparticle is removed processing from number of times 7 to number of times 8.The microparticle number can be reduced to below 500.The example of Figure 17 is under the many states of microparticle, to carry out, and after removing processing with the microparticle of pre-treatment, remaining microparticle number is also many.
Figure 18 removes for the microparticle that expression utilizes common batch process device to carry out band pre-treatment of the present invention, carry out to produce in batches, and the microparticle number on the wafer and microparticle are removed the relevant figure of number of times.(NPPC: number of times non-plasma particle cleaning), the longitudinal axis is the calculating number of microparticle to transverse axis for the microparticle of band pre-treatment is removed.After device is got ready, diameter be the above microparticle (>=200nm φ) of 200nm less than 140, when implementing to handle the microparticle cleaning of carrying out the pre-treatment of three bands, be reduced to 10, generally can reach in 20 of so-called particle specification.Like this, when after device is set up, waiting generation microparticle to pollute,, replace existing trial run or dried or pump to clean, can reduce the microparticle pollution significantly through carry out this execution mode.
(execution mode 14)
As it is said to implement mode 8, through giving and mechanical oscillation, can cause that microparticle disperses.The present inventor is in wafer table moves or move when stopping, and finds to disperse with the microparticle of mechanical oscillation as reason.Microparticle disperses and only is not on wafer table, from other inwalls such as upper electrode relative with wafer table, also to peel off.Wafer table moves the vibration that causes, can be through gas transfer remaining in chamber.In this execution mode, remove the driving sequence that imports wafer table in the operation at execution mode 12 described microparticles, can improve and peel off effect.The flow process of this execution mode is appended step S35 between step S3 in the flow process of execution mode 13 (Figure 13) and the step S4, and other are identical.
Figure 19 representes step S35.In step S3 (Figure 13), import N
2Gas maintains about 6.7 * 10 with pressure
3Behind the Pa (50Torr), in step S4, add high voltage.As step S35, drive wafer table repeatedly, repeated multiple times moves wafer table.Caused vibration, peelable or peel off easily attached to the microparticle on the chamber inner wall, after, add high voltage and peel off microparticle easily.
When with laser scattering method (execution mode 11) mobile observation wafer table, observe the microparticle that disperses in the moment that the wafer table rising stops.This is that the microparticle attached on the upper electrode falls by gravity because the mechanical oscillation of the moment that wafer table stops temporarily reduce the adhesive force of microparticle, and the microparticle attached to wafer table is dispersed to the top by inertia force.At this moment, to add high voltage big for the effect ratio of peeling off of microparticle, and the microparticle of peeling off is 1.3 * 10
3Pa (10Torr)) under the pressure more than, by the N that flows
2Gases such as gas are discharged effectively.
Granule number when Figure 20 representes wafer table is risen and the relation of translational speed.Transverse axis among Figure 20 is the translational speed of wafer table, and the longitudinal axis on the left side is the observation rate of microparticle, and the longitudinal axis on the right is the value of acceleration transducer.Microparticle observation rate is the ratio of microparticle observation frequency with respect to workbench driving number of times, and it is proportional with the granule number of peeling off.Vibration when in addition, the value representation wafer table of acceleration transducer stops.From figure, can find out,, hope that translational speed is fast in order to obtain the effect of this execution mode.This is that the quality of the object of this kinetic energy and motion is proportional because the kinergety of wafer table is to peel off the energy of microparticle.Again because therefore square proportional with speed make the big wafer table high-speed mobile suspension of prescription fruit of quality good.Shown in the value of the acceleration transducer of Figure 20, the translational speed that moves when stopping is high more, vibrates big more.
In this execution mode, the vibration when utilizing wafer table to drive, wafer table still not, if the moving-member that is attached to chamber is arranged, the vibration in the time of also can utilizing it to move.For example, the vibration in the time of can utilizing drive that used magnet slew gear, the wafer transfer in magnetic field that adjustment gives plasma use be located at pin on the wafer table mechanism and being configured in moves into the baffle plate switching mechanism of taking out of on the gate that wafer uses up and down.In addition,, the for example structure of impact driver of vibrative parts is set then, also can produces vibration if do not make chamber that the driver part of vibration takes place.
In addition, the utilization of the mechanical oscillation of driver part is not only for execution mode described here 14, can be suitable for the pre-treatment of execution mode 13 yet.Because when giving with mechanical oscillation, microparticle is dispersed or peel off, therefore also can this microparticle of the present invention be dispersed or stripping means combination use.
Claims (7)
1. a method for cleaning elements makes attached to the microparticle on the parts of decompression process chamber and disperses, and it is characterized by, and has:
In the indoor step that is decompressed to the 1st pressure of said reduced pressure treatment;
In the step that makes under the state that has passed through said decompression attached to the charged one-tenth specified polarity of said microparticle on the said parts;
The voltage that polarity is identical with the charged particles of said microparticle is added on the said parts, makes the step of dispersing attached to the said microparticle on the said parts; With
With the pressure of said decompression process chamber be increased to than said the 1st pressure high 1.3 * 10
3More than the Pa, the said microparticle that disperses is entrained in the gas stream, from the indoor step of removing said microparticle of said reduced pressure treatment.
2. method for cleaning elements as claimed in claim 1 is characterized by,
Said charged step is the step that in the upper parts of components space, produces plasma.
3. method for cleaning elements as claimed in claim 1 is characterized by,
Said charged step is the step with the UV-irradiation parts surface.
4. method for cleaning elements as claimed in claim 3 is characterized by,
Said ultraviolet light is a vacuum-ultraviolet light.
5. method for cleaning elements as claimed in claim 1 is characterized by,
Said charged step is the step with electronics or ion exposure parts surface.
6. method for cleaning elements as claimed in claim 1 is characterized by,
Said charged step is the step with the x-ray bombardment parts surface.
7. method for cleaning elements as claimed in claim 6 is characterized by,
Said X ray is a grenz ray.
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| JP2003-300427 | 2003-08-25 | ||
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| JP2004218939 | 2004-07-27 | ||
| JP2004218939A JP4754196B2 (en) | 2003-08-25 | 2004-07-27 | Member cleaning method and substrate processing apparatus in decompression processing chamber |
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| JP5395405B2 (en) | 2008-10-27 | 2014-01-22 | 東京エレクトロン株式会社 | Substrate cleaning method and apparatus |
| JP5056991B1 (en) * | 2012-02-02 | 2012-10-24 | ウシオ電機株式会社 | Polarized light irradiation device |
| CN103785646A (en) * | 2012-10-30 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Reaction cavity cleaning method |
| CN105021374A (en) * | 2014-04-25 | 2015-11-04 | 三星高新电机（天津）有限公司 | Measurement device and measurement method for foreign matters on surface of assembly product |
| CN105097423B (en) * | 2014-05-12 | 2018-09-18 | 中芯国际集成电路制造(上海)有限公司 | Plasma reactor and the method for removing plasma reaction chamber particle contamination |
| KR20170093366A (en) * | 2016-02-05 | 2017-08-16 | 주식회사 이오테크닉스 | Wafer Cleaning Apparatus |
| CN107626688B (en) * | 2016-07-19 | 2021-10-29 | 富泰华工业（深圳）有限公司 | Electronic device capable of automatically cleaning screen |
| JP6894256B2 (en) * | 2017-02-23 | 2021-06-30 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment method and heat treatment equipment |
| CN106842650B (en) * | 2017-04-10 | 2019-06-07 | 京东方科技集团股份有限公司 | Processing unit, the processing method of display base plate foreign matter of display base plate foreign matter |
| JP6975596B2 (en) * | 2017-09-20 | 2021-12-01 | 株式会社Ｓｃｒｅｅｎホールディングス | Particle removal method and heat treatment equipment |
| JP7080134B2 (en) * | 2018-08-07 | 2022-06-03 | 東京エレクトロン株式会社 | Particle removal method of board processing device and board processing device |
| CN113514968B (en) * | 2021-06-30 | 2023-07-18 | 惠科股份有限公司 | Repairing method and repairing equipment for display panel |
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| JP2011097068A (en) | 2011-05-12 |
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