CN103785646A - Reaction cavity cleaning method - Google Patents
Reaction cavity cleaning method Download PDFInfo
- Publication number
- CN103785646A CN103785646A CN201210422958.0A CN201210422958A CN103785646A CN 103785646 A CN103785646 A CN 103785646A CN 201210422958 A CN201210422958 A CN 201210422958A CN 103785646 A CN103785646 A CN 103785646A
- Authority
- CN
- China
- Prior art keywords
- reaction chamber
- power supply
- plasma
- electrostatic chuck
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B6/00—Cleaning by electrostatic means
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to a reaction cavity cleaning method. The reaction cavity cleaning method is used for cleaning a reaction cavity used for a plasma processing process and polymers accumulated on the surface of a gas spraying head. An electrostatic chuck is arranged below the reaction cavity. The method comprises the steps of leading cleaning gas in the reaction cavity; applying a radio-frequency power supply to the reaction cavity, applying a direct current power supply to the electrostatic chuck, enabling the radio-frequency power supply to act on the cleaning gas to generate plasma, enabling the plasma to react with the polymers to generate charged ions, and enabling the voltage polarity of the direct current power supply to be the same as the electric polarity of the charged ions; and extracting out remaining materials in the reaction cavity. According to the reaction cavity cleaning method, in the cleaning process, repeated deposition of the polymers on the electrostatic chuck or a lower electrode is effectively avoided, cleaning efficiency is obviously improved, and the cost is reduced.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly, relate to a kind of reaction chamber cleaning method.
Background technology
In plasma-treating technology process, along with the etching to wafer, can be in plasma etching equipment reaction chamber wall, gas spray surface deposition forms some polymer.In subsequent technique process, the reacting gas that these polymer can be required with plasma-treating technology reacts and discharges other gas, and consumes reacting gas by reaction, and plasma treatment process has brought interference.
In addition, in the time that the polymer of this deposition reaches certain thickness, may, from the reaction chamber wall of plasma processing and gas spray surfacial spalling, fall on wafer or bottom electrode, cause product to scrap because defect exceeds standard or plasma processing warning.Bring uncontrollable unfavorable factor to technique thus, also increased the expense of making cost and plasma processing maintenance of wafer.
As shown in Figure 1, available technology adopting some reaction chamber cleaning methods, generally in reaction chamber 100, pass into purge gas with gas spray 102, and apply radio-frequency power supply and produce rf electric field to reaction chamber 100, rf electric field acts on purge gas and produces plasma, plasma reacts and generates the material including charged ion with the polymer that is deposited on reaction chamber wall 101 and gas spray 102 surfaces, finally with vavuum pump 104 by reacted surplus materials extraction chamber, thereby the cleaning process of completing.
But in this cleaning process, charged ion also may be below reaction chamber electrostatic chuck 103 or bottom electrode on again deposition become polymer, also cannot effectively remove even if adopt vavuum pump 104 to bleed, often need repeatedly to clean and just may eliminate the adverse effect that these polymer plasma treatment process that again deposit bring.
Therefore, in the process of cleaning reaction chamber, gas spray, effectively avoiding the again deposition of polymer on electrostatic chuck or bottom electrode, is the technical issues that need to address of the present invention.
Summary of the invention
The object of the present invention is to provide a kind of reaction chamber cleaning method, it can effectively avoid the deposition again of polymer.
For achieving the above object, technical scheme of the present invention is as follows:
A kind of reaction chamber cleaning method, for cleaning the reaction chamber of plasma-treating technology use and the polymer of gas spray surface sediment, reaction chamber below is provided with electrostatic chuck, and the method comprises the steps: a), in reaction chamber, passes into purge gas; B), apply radio-frequency power supply to reaction chamber, and apply a dc source to electrostatic chuck; Wherein, radio-frequency power supply acts on purge gas and produces plasma, plasma and polymer reaction and generate charged ion, and the polarity of voltage of dc source is identical with the electric polarity of charged ion; C), the surplus materials in extraction chamber.
Preferably, dc source puts on time of electrostatic chuck and radio-frequency power supply and puts on the time synchronized of reaction chamber.
Preferably, purge gas comprises oxygen.
Preferably, purge gas also comprises fluoro-gas.
Reaction chamber cleaning method provided by the invention, in the process of cleaning reaction chamber, gas spray, effectively avoid the again deposition of polymer on electrostatic chuck or bottom electrode, thereby cleaning efficiency obviously improves, and can save cost, further can improve the product yield of the processing wafer in plasma-treating technology.
Accompanying drawing explanation
Fig. 1 illustrates prior art applying plasma reaction chamber structural representation;
Fig. 2 illustrates the reaction chamber cleaning method schematic flow sheet of one embodiment of the invention.
The specific embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
It should be noted that, in arbitrary embodiment of the present invention, plasma-treating technology carries out in a reaction chamber, gas spray is located at reaction chamber top, the position that is right against gas spray in reaction chamber bottom is provided with electrostatic chuck, be used for carrying wafer, the inside of electrostatic chuck or its upper surface are equipped with a bottom electrode, for adsorbing wafer; Reaction chamber below is also connected with a vavuum pump, for the remaining gas of reaction chamber after extraction and particulate.
In normal plasma-treating technology, import reacting gas by gas spray to reaction chamber, apply radio-frequency power supply to reaction chamber again and produce rf electric field, rf electric field acts on reacting gas and generates plasma, plasma and wafer carry out etching reaction, thereby complete the processing to wafer.Complete the processing of wafer is just shifted out to reaction chamber by wafer afterwards, can greatly increase at the amount of polymers that carries out repeatedly accumulating in all after date reaction chambers of wafer processing, need to clean.
As shown in Figure 2, the reaction chamber cleaning method that one embodiment of the invention provides, for cleaning the reaction chamber of plasma-treating technology use and the polymer of gas spray surface sediment, the method comprises the steps.
Step S1: pass into purge gas in reaction chamber.
Particularly, in reaction chamber, pass into reacting gas with gas spray.
According to this embodiment, purge gas comprises oxygen.
Further, purge gas comprises at least one fluoro-gas, for example, be C
2f
6, C
2f
4deng.
The pressure of the purge gas that this embodiment adopts is 0.2Torr-1Torr.
Step S2: apply a dc source to electrostatic chuck, and apply radio-frequency power supply to reaction chamber; Wherein, radio-frequency power supply acts on purge gas and produces plasma, and the polarity of voltage of dc source is identical with the electric polarity of plasma.
Particularly, in cleaning process, radio-frequency power supply acts on purge gas and produces plasma, the polymer generation etching reaction of plasma and deposition, the product of generation including charged ion, these charged ions can be with certain electric polarity, and this specifically depends on the constituent of polymer.
According to this embodiment, the formation of polymer comprises fluorine element, element silicon, carbon simultaneously.
Further, the formation of polymer also comprises any one or more in oxygen element, aluminium element, iridium, nitrogen element.
For avoiding the again deposition of gaseous reaction products on electrostatic chuck surface, the present invention continues to apply a dc source to electrostatic chuck in above-mentioned cleaning process, the polarity of voltage of this dc source is identical with the electric polarity of the charged ion that plasma reaction produces, and then bring the effect of two like magnetic poles repel each other, repel charged ion and again deposit on electrostatic chuck or bottom electrode, effectively prevent the formation of polymer.
In this embodiment, charged ion electric polarity is for negative, and the voltage of the dc source of employing is-1000 volts.The selection of above-mentioned dc source voltage swing and polarity also will be considered the type of electrostatic chuck, some charged ion that can produce positive polarity at the upper surface of electrostatic chuck is as Coulomb type, some can produce the charged ion of negative polarity as Johnsen-Rahbek (JR) type, so the dc source applying will be considered according to the Type Synthesis of the polarity of charged ion and electrostatic chuck, so that can be according to the principle of two like magnetic poles repel each other, make charged ion can not drop to electrostatic chuck surface and again deposit.
According to this embodiment, the power of the radio-frequency power supply applying to reaction chamber is less than 1500W.
Step S3: extract the gas after plasma and polymer reaction out.
Particularly, with the vavuum pump of being located at reaction chamber below by reacted gas extraction chamber, thereby the cleaning process of completing.
The reaction chamber cleaning method that this embodiment provides, obviously improves the cleaning efficiency of polymer, and saving is cleaned consuming time, and can save cost, further can improve the product yield of the processing wafer in plasma-treating technology.
Further, dc source puts on time of electrostatic chuck and radio-frequency power supply and puts on the time synchronized of reaction chamber.In whole cleaning process, be from first to last continuously electrostatic chuck and connect the polarity dc source identical with charged ion electric polarity, again form polymer effectively to prevent charged ion from depositing on electrostatic chuck.
The reaction chamber cleaning method that another embodiment of the present invention provides, comprises following three steps: in reaction chamber, pass into purge gas equally; Apply a dc source to electrostatic chuck or bottom electrode, and apply radio-frequency power supply to reaction chamber; Extract the gas after plasma and polymer reaction out.
Wherein, the fluoro-gas that purge gas comprises comprises NF
3, the pressure of purge gas is 0.03Torr-0.2Torr.
Radio-frequency power supply acts on purge gas and produces plasma, and the electric polarity of the polymer reaction of plasma and deposition and the charged ion that produces is for just; Therefore, according to the principle of two like magnetic poles repel each other, for effectively preventing that charged ion from forming polymer again in electrostatic chuck or bottom electrode deposition, the polarity of voltage of the dc source applying to electrostatic chuck or bottom electrode is also for just, and size is 800 volts.
The radio-frequency power supply power applying to reaction chamber is less than 1500W.
Further, dc source puts on time of electrostatic chuck and radio-frequency power supply and puts on the time synchronized of reaction chamber.
In other embodiments of the invention, determine the voltage of dc source according to the type of the polarity of charged ion and electrostatic chuck, concrete voltage range is for being greater than 100 volts, not higher than 1000 volts.
The reaction chamber cleaning method that this embodiment provides, cleaning efficiency obviously improves, and saving is cleaned consuming time, saves cost, and improves the product yield of the processing wafer in plasma-treating technology.
Above-described is only the preferred embodiments of the present invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization description of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (9)
1. a reaction chamber cleaning method, for cleaning the reaction chamber of plasma-treating technology use and the polymer of gas spray surface sediment, described reaction chamber below is provided with electrostatic chuck, and the method comprises the steps:
A), in described reaction chamber, pass into purge gas;
B), apply radio-frequency power supply to described reaction chamber, and apply a dc source to described electrostatic chuck; Wherein, described radio-frequency power supply acts on described purge gas and produces plasma, described plasma and described polymer reaction and generate charged ion, and the polarity of voltage of described dc source is identical with the electric polarity of described charged ion;
C), extract the surplus materials in described reaction chamber out.
2. the method for claim 1, is characterized in that, described step b) in, described dc source puts on time of described electrostatic chuck and described radio-frequency power supply and puts on the time synchronized of described reaction chamber.
3. method as claimed in claim 2, is characterized in that, the voltage of described dc source is greater than 100 volts, not higher than 1000 volts.
4. the method for claim 1, is characterized in that, described purge gas comprises oxygen.
5. method as claimed in claim 4, is characterized in that, described purge gas also comprises fluoro-gas.
6. method as claimed in claim 5, is characterized in that, the pressure of described purge gas is 0.03Torr-1Torr.
7. the method for claim 1, is characterized in that, the formation of described polymer comprises fluorine element, element silicon, carbon.
8. method as claimed in claim 7, is characterized in that, the formation of described polymer also comprise in oxygen element, aluminium element, iridium, nitrogen element any or appoint multiple.
9. the method for claim 1, is characterized in that, the power of described radio-frequency power supply is less than 150 0W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210422958.0A CN103785646A (en) | 2012-10-30 | 2012-10-30 | Reaction cavity cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210422958.0A CN103785646A (en) | 2012-10-30 | 2012-10-30 | Reaction cavity cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103785646A true CN103785646A (en) | 2014-05-14 |
Family
ID=50661943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210422958.0A Pending CN103785646A (en) | 2012-10-30 | 2012-10-30 | Reaction cavity cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103785646A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104259160A (en) * | 2014-08-06 | 2015-01-07 | 上海正帆科技有限公司 | Method for cleaning polycrystalline silicon reducing furnace by dry method |
| CN107863304A (en) * | 2017-11-08 | 2018-03-30 | 上海华力微电子有限公司 | A kind of method for detecting electrostatic chuck surface particulate pollutant |
| JP2022095681A (en) * | 2017-08-18 | 2022-06-28 | 東京エレクトロン株式会社 | Cleaning method and plasma processing apparatus |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1568797A2 (en) * | 2004-02-26 | 2005-08-31 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
| CN1691276A (en) * | 2004-04-19 | 2005-11-02 | 兰姆研究有限公司 | Waferless automatic cleaning after barrier removal |
| CN1848383A (en) * | 2005-12-02 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for removing residual polymer in polysilicon etching technology |
| CN101022693A (en) * | 2006-02-13 | 2007-08-22 | 东京毅力科创株式会社 | Cleaning method for substrate processing chamber, storage medium, and substrate processing chamber |
| CN101052742A (en) * | 2004-03-24 | 2007-10-10 | 麻省理工学院 | Remote chamber methods for removing surface deposits |
| CN101320677A (en) * | 2003-08-25 | 2008-12-10 | 东京毅力科创株式会社 | Method for cleaning elements in vacuum chamber and apparatus for processing substrates |
| US20110048453A1 (en) * | 2009-09-03 | 2011-03-03 | Tokyo Electron Limited | Chamber cleaning method |
| WO2011051409A1 (en) * | 2009-10-30 | 2011-05-05 | Solvay Sa | Method of plasma etching and plasma chamber cleaning using f2 and cof2 |
| CN102136410A (en) * | 2010-01-27 | 2011-07-27 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning technological cavities of semiconductor |
| CN102637573A (en) * | 2012-04-28 | 2012-08-15 | 中微半导体设备(上海)有限公司 | Semiconductor processing device and manufacture method thereof |
-
2012
- 2012-10-30 CN CN201210422958.0A patent/CN103785646A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320677A (en) * | 2003-08-25 | 2008-12-10 | 东京毅力科创株式会社 | Method for cleaning elements in vacuum chamber and apparatus for processing substrates |
| EP1568797A2 (en) * | 2004-02-26 | 2005-08-31 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
| CN101052742A (en) * | 2004-03-24 | 2007-10-10 | 麻省理工学院 | Remote chamber methods for removing surface deposits |
| CN1691276A (en) * | 2004-04-19 | 2005-11-02 | 兰姆研究有限公司 | Waferless automatic cleaning after barrier removal |
| CN1848383A (en) * | 2005-12-02 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for removing residual polymer in polysilicon etching technology |
| CN101022693A (en) * | 2006-02-13 | 2007-08-22 | 东京毅力科创株式会社 | Cleaning method for substrate processing chamber, storage medium, and substrate processing chamber |
| US20110048453A1 (en) * | 2009-09-03 | 2011-03-03 | Tokyo Electron Limited | Chamber cleaning method |
| WO2011051409A1 (en) * | 2009-10-30 | 2011-05-05 | Solvay Sa | Method of plasma etching and plasma chamber cleaning using f2 and cof2 |
| CN102136410A (en) * | 2010-01-27 | 2011-07-27 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning technological cavities of semiconductor |
| CN102637573A (en) * | 2012-04-28 | 2012-08-15 | 中微半导体设备(上海)有限公司 | Semiconductor processing device and manufacture method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104259160A (en) * | 2014-08-06 | 2015-01-07 | 上海正帆科技有限公司 | Method for cleaning polycrystalline silicon reducing furnace by dry method |
| JP2022095681A (en) * | 2017-08-18 | 2022-06-28 | 東京エレクトロン株式会社 | Cleaning method and plasma processing apparatus |
| JP7302060B2 (en) | 2017-08-18 | 2023-07-03 | 東京エレクトロン株式会社 | Cleaning method and plasma processing apparatus |
| CN107863304A (en) * | 2017-11-08 | 2018-03-30 | 上海华力微电子有限公司 | A kind of method for detecting electrostatic chuck surface particulate pollutant |
| CN107863304B (en) * | 2017-11-08 | 2020-08-04 | 上海华力微电子有限公司 | Method for detecting particle pollutants on surface of electrostatic chuck |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102024658B (en) | Plasma processing equipment and method | |
| CN102779715B (en) | Plasma generation electrode and plasma processing apparatus | |
| CN103959447A (en) | Plasma processing apparatus and plasma processing method | |
| WO2007038580A3 (en) | Apparatus and methods to remove films on bevel edge and backside of wafer | |
| KR20170048468A (en) | Atomic layer etching device and atomic layer etching method using same | |
| CN100571903C (en) | The method of cleaning chamber with silicon chip erosion | |
| CN104508803B (en) | Method of plasma processing | |
| CN102209426A (en) | Plasma processing method and plasma processing apparatus | |
| CN101214487B (en) | Method for cleaning cavity of semiconductor etching equipment | |
| CN105898977A (en) | Plasma Producing Apparatus | |
| US20130157067A1 (en) | Plasma-resistant member and method for regenerating same | |
| CN103785646A (en) | Reaction cavity cleaning method | |
| CN104205306A (en) | Method for control of adherence of microparticles to base material to be processed, and processing device | |
| CN101880867B (en) | Plasma enhanced chemical vapor deposition device | |
| CN103035466A (en) | Precleaning method and plasma device | |
| MY176134A (en) | Apparatus and method for the plasma coating of a substrate, in particular a press platen | |
| TWI453816B (en) | Dry-cleaning method for plasma processing apparatus | |
| CN102586753A (en) | Method for cleaning metal organic chemical vapor deposition (MOCVD) device | |
| CN102553867A (en) | Dry cleaning method for reaction chamber of plasma etching equipment | |
| CN104282519A (en) | Cleaning method for plasma treatment device | |
| CN112609168B (en) | Method for rapidly cleaning accumulated film in large-area vacuum chamber | |
| CN102560426B (en) | Automatic circulation plasma vapor phase deposition system | |
| JP2012142584A5 (en) | ||
| CN206084609U (en) | When ion polishing machine electrical power generating system | |
| WO2012159710A3 (en) | Methods for the surface treatment of metal, metalloid and semiconductor solids |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140514 |
|
| RJ01 | Rejection of invention patent application after publication |