CN105810775A - CMOS image sensor technology-based NP type single-photon avalanche diode - Google Patents
CMOS image sensor technology-based NP type single-photon avalanche diode Download PDFInfo
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Abstract
The inventioN discloses a CMOS image sensor technology-based NP type single-photon avalanche diode (SPAD). The basic structure of the SPAD comprises a deep N-well arranged above a P-type silicon substrate; a P-well formed above the deep N-well; a lightly-doped guard ring surrounding the P-well; a N+ region formed above the P-well and overlapped with the guard ring; a PN-junction formed between the N+ region and the P-well; a cathode electrode and an anode electrode respectively led out of the N+ and P+; a heavily-doped P-type region formed above the N+ region and the guard ring; a P-well surrounding the guard ring and a substrate electrode led out of the P+. According to the technical scheme of the invention, through forming the heavily-doped P-type region on the surface of the N+ region, the dark counting caused by defects on the interface of an NP-type SPAD device can be reduced. Based on the effective layout technique, the dark counting caused by defects in the STI is reduced. Based on the effective guard ring technique, the edge breakdown of the SPAD device is prevented. Through applying an appropriate bias voltage between the electrodes, the response within the blue band is enhanced.
Description
Technical field
The present invention relates to the structure of a kind of NP type single-photon avalanche diode based on cmos image sensor technique.
Background technology
Single photon detection is the detection method of a kind of atomic low light level, is widely used in the fields such as astronomy, biochemistry and medical diagnosis.Owing to the energy of single photon is extremely low, it is difficult to directly this faint signal extraction out by common detection method.Want change caused after observing the single photon of material absorbing, it is necessary to there is relevant amplification mechanism.Utilize photoelectric effect principle, it is possible to adopt the single-photon detector based on photomultiplier tube (PMT) and avalanche photodide.
The single photon detection of early stage adopts the method for photomultiplier tube.The advantage that PMT has high-gain as single-photon detector, photosurface is big and dark counting is low, it require that work is under high voltages (generally between 800 to 1500V), it is impossible to carry out integrated with signal processing circuit, and be easily subject to the impact in magnetic field.
Avalanche photodide is a kind of photoelectric device being based upon on inner photoeffect basis.Avalanche photodide works under reverse bias, and reverse biased is more high, and the electric field intensity in depletion layer is also more big.In single photon detection, APD is operated under Geiger mode angular position digitizer, and reverse bias voltage is more than its avalanche breakdown voltage, and therefore it is also referred to as geiger mode avalanche photodiodes or single-photon avalanche diode (SPAD).SPAD has single photon detection sensitivity, picosecond magnitude response speed, gain coefficient is high, insensitive to ionizing radiation and magnetic field, running voltage is low, dark current is low, volume is little, low in energy consumption, excess noise is little, compact conformation, integrated advantages of higher, is widely used in fields such as optical field detection, photonic propulsion, laser rangings and pays close attention to.
Saying for CMOSSPAD device, it mainly has two kinds of structures: one is PN type, and another kind is NP type.PN type SPAD is making N trap in P type substrate, then makes heavily doped P-type district in N trap, is made up of PN junction N trap and P+, forms multiplication region.The SPAD of NP type is injection N trap in P type substrate, is made up of PN junction P type substrate and N trap, forms multiplication region.For the SPAD of PN type, the probability of the light triggering avalanche of short wavelength wants big, and the probability of the light triggering avalanche of long wavelength is little, and therefore PN type SPAD is more sensitive to blue light；Meanwhile, SiO2Producing hole with the defect capture electronics at Si interface, even if when additional reverse bias voltage, these holes will not enter multiplication region and triggering avalanche.And NP type SPAD is more sensitive to green glow；NP type SPAD can use heavy doping n-quadrant and substrate P to constitute, and its depletion layer is relatively wide, it is possible to obtain bigger detection efficient；But due to SiO2Electronics can be caught, thus in generation hole, interface, move to territory, p type island region in these holes under the effect of applied reverse bias voltage with the defect at Si interface；When reversed bias voltage is more than breakdown voltage, the hole meeting triggering avalanche of motion, so that the dark counting of device increases.Study single photon photoelectric detector aspect based on standard CMOS process and carry out a lot of work.Traditional CMOS single-photon avalanche diode uses P+/Nwell knot to realize, and the application of NP type single-photon avalanche diode is restricted due to poor noise characteristic.
Summary of the invention
For above deficiency of the prior art, the present invention proposes a kind of NP type single-photon avalanche diode (SPAD) based on cmos image sensor technique, and its basic structure includes: P-type silicon substrate (100) is arranged over deep N-well (200)；P-well (301) is formed at deep N-well (200) top and contacts with deep N-well (200)；P-well (301) be provided around lightly doped protection ring (401,402)；N+ region (601,602) is formed at p-well (301) top, and has certain overlap with lightly doped protection ring (401,402)；N+ region (601,602) and lightly doped protection ring (401,402) be arranged over territory, heavily doped p type island region (801,802,803), cover the surface of whole (601,602) and (401,402) except cathode contacts and positive contact；Lightly doped protection ring (401,402) is provided around p-well (302,303), and p-well region (302,303) draws underlayer electrode by P+ region (502,503)；Territory, heavily doped p type island region (801,802,803) and p-well (302,303) link up, and have identical electromotive force；Shallow junction isolation STI (702,703) it is provided with between P+ region (502,503) Yu territory, heavily doped p type island region (801,802,803)；STI(702,703) it is provided with certain distance with between territory, heavily doped p type island region (801,802,803).Form PN junction (11) between bottom and the top of p-well (301) in N+ region (601,602), and draw cathode electrode and anode electrode by N+ region (601) and P+ region (501).
The method have technical effect that:
1) single-photon avalanche diode of the present invention, simple in construction, under Geiger mode angular position digitizer, there is avalanche breakdown, it is possible to achieve the detection of single photon.
2) single-photon avalanche diode of the present invention has four PN junctions along junction depth direction, by adding suitable bias voltage, makes knot (11) be operated in Geiger mode angular position digitizer, and other three PN junctions are all in reverse-bias state, it is possible to improve the temporal resolution of device；If making knot (12) be operated in Geiger mode angular position digitizer, then can strengthen the device response to blue light.
3) single-photon avalanche diode of the present invention, by making territory, heavily doped p type island region in N+ region surface, it is possible to reduce the dark counting that the boundary defect of NP type SPAD device causes, improve the noise characteristic of device.
4) single-photon avalanche diode of the present invention, by effective layout techniques, it is possible to reduce the dark counting that in STI, defect causes.
5) single-photon avalanche diode of the present invention, by being effectively protected loop technique, it is possible to prevents SPAD device generation edge breakdown.
6) this device realizes in cmos image sensor technique, can process with follow-up cmos signal and reading circuit carry out Single-Chip Integration, has very big using value in the realizing of 3D rendering sensor.
Accompanying drawing explanation
Fig. 1 is the structural representation of the single-photon avalanche diode in the present invention.
Fig. 2 is the quenching circuit of the single-photon avalanche diode in the present invention.
Fig. 3 is the schematic diagram of the embodiment according to Fig. 1.
Fig. 4 is the schematic diagram of the specific embodiment according to Fig. 3.
Fig. 5 is the schematic diagram of the still another embodiment according to Fig. 3.
Detailed description of the invention
Fig. 1 is a kind of NP type single-photon avalanche diode (SPAD) based on cmos image sensor technique provided by the invention, and its basic structure includes: P-type silicon substrate (100) is arranged over deep N-well (200)；P-well (301) is formed at deep N-well (200) top and contacts with deep N-well (200)；P-well (301) be provided around lightly doped protection ring (401,402)；N+ region (601,602) is formed at p-well (301) top, and has certain overlap with lightly doped protection ring (401,402)；N+ region (601,602) and lightly doped protection ring (401,402) be arranged over territory, heavily doped p type island region (801,802,803), cover the surface of whole (601,602) and (401,402) except cathode contacts and positive contact；Lightly doped protection ring (401,402) is provided around p-well (302,303), and p-well region (302,303) draws underlayer electrode by P+ region (502,503)；Territory, heavily doped p type island region (801,802,803) and p-well (302,303) link up, and have identical electromotive force；Shallow junction isolation STI (702,703) it is provided with between P+ region (502,503) Yu territory, heavily doped p type island region (801,802,803)；STI(702,703) it is provided with certain distance with between territory, heavily doped p type island region (801,802,803).Form PN junction (11) between bottom and the top of p-well (301) in N+ region (601,602), and draw cathode electrode and anode electrode by N+ region (601) and P+ region (501).
When the reverse bias voltage of SPAD is higher than breakdown voltage, photo-generated carrier and dark carrier can triggering avalanche, thus producing output pulse.And SPAD is for weak optical signal detection, if the umber of pulse that dark carrier causes is relatively big, signal and noise will produce to obscure, it is impossible to detect faint optical signal.Therefore, noise characteristic becomes the subject matter of SPADs.In the present invention, by arranging territory, heavily doped p type island region in N+ region surface, and suitable bias voltage is set makes N+ region reverse-biased with the PN junction that territory, heavily doped p type island region is constituted, restrained effectively NP type SPAD and catch electronics due to boundary defect and the dark counting that produces；By suitable layout techniques, making to exist between STI and SPAD multiplication region certain distance, thus reducing STI interface deep energy level carrier to produce the dark counting that center causes, reducing the dark noise of device.
Fig. 2 is single-photon avalanche diode quenching circuit in 3D rendering sensor is applied in the present invention.D1It is the diode of PN junction in device shown in Fig. 1 (12,14) equivalence, blue light and HONGGUANG are had good response；D2It is the diode of PN junction in device (11,13) equivalence, green glow is had good response.D1Plus earth, D2Anode connect-V BD, D1With D2Common cathode, by PMOS device M1It is biased toV DD.As Start=0, D2The voltage swing at two ends isV DD+V BD, it is biased in the state of Geiger mode angular position digitizer, the critical electric field strength when electric field intensity in depletion layer is more than generation avalanche breakdown；D1Both end voltage isV DD, it is in reverse-biased.If have photon incidence, device absorbs photon and produces photo-generate electron-hole pair, and photo-generated carrier is triggering avalanche under electric field action, makes the output electric current of incident optical signal be amplified.Now, SPAD negative electrode node voltageV CWill be byV DDSaltus step is 0 level, and this change in voltage will export, by phase inverter, the pulse signal Vp that robustness is very strong, and this change in voltage will trigger or stop timing.
Fig. 3 is the schematic diagram of the embodiment according to Fig. 1.This embodiment adopts low-doped n type region as protection ring; the doping content in low-doped n type region is lower than N+ region; when constituting PN junction with p-well region, make the breakdown voltage of the edge breakdown voltage of the PN junction plane multiplication regions higher than SPAD, it is prevented that SPAD device generation edge breakdown.
Fig. 4 is the schematic diagram of the specific embodiment according to Fig. 3.This embodiment adopt N well region as protection ring.
Fig. 5 is the schematic diagram of the still another embodiment according to Fig. 3.This embodiment adopts without N trap protection ring, and namely deep N-well is as protection ring.
In sum, the present invention, based on cmos image sensor technique, devises a kind of single-photon avalanche diode, it is achieved that the detection to faint light or even single photon, improves the temporal resolution of device, improve the noise characteristic of device.
Claims (10)
1. a kind of NP type single-photon avalanche diode (SPAD) based on cmos image sensor technique of disclosure, including:
P-type silicon substrate (100) is arranged over deep N-well (200)；P-well (301) is formed at deep N-well (200) top and contacts with deep N-well (200)；P-well (301) be provided around lightly doped protection ring (401,402)；N+ region (601,602) is formed at p-well (301) top, and has certain overlap with lightly doped protection ring (401,402)；N+ region (601,602) and lightly doped protection ring (401,402) be arranged over territory, heavily doped p type island region (801,802,803), cover the surface of whole (601,602) and (401,402) except cathode contacts and positive contact；Lightly doped protection ring (401,402) is provided around p-well (302,303), and p-well region (302,303) draws underlayer electrode by P+ region (502,503)；Territory, heavily doped p type island region (801,802,803) and p-well (302,303) link up, and have identical electromotive force；Shallow junction isolation STI (702,703) it is provided with between P+ region (502,503) Yu territory, heavily doped p type island region (801,802,803)；STI(702,703) it is provided with certain distance with between territory, heavily doped p type island region (801,802,803)；Form PN junction (11) between bottom and the top of p-well (301) in N+ region (601,602), and draw cathode electrode and anode electrode by N+ region (601) and P+ region (501).
2. SPAD according to claim 1, the effect of wherein said p-well (301) lightly doped region (401,402) around is in that, makes the breakdown voltage of the edge breakdown voltage of PN junction (11) the plane multiplication regions higher than SPAD, it is prevented that edge breakdown.
3. SPAD according to claim 2, wherein said lightly doped region (401,402) is the N-type region territory that doping content is less than N+ region (601,602), such as N well region or deep N-well region.
4. the effect of SPAD according to claim 1, wherein said lightly doped region (401,402) and deep N-well is in that to isolate p-well (301) and substrate P (100).
5. SPAD according to claim 1, the doping content in wherein said heavily doped P-type region (801,802,803), more than the doping content of N+ region (601,602) Yu P+ region (501,502,503), is the region that in device, doping content is maximum.
6. SPAD according to claim 1, wherein said heavily doped P-type region (801,802,803) the whole N+ region (601 except positive contact and cathode contacts is covered, 602) and the surface of lightly doped region (401,402), its effect is to collect the hole produced after interface trap catches electronics, make hole will not move to the high field region of PN junction (11), thus reducing the dark counting of device.
7. it is provided with shallow-trench isolation STI(702 between SPAD, P+ region (502,503) according to claim 1 Yu heavily doped P-type region (801,803), 703).
8. the SPAD according to claim 1, described in 6,7, wherein said heavily doped P-type region (801,802,803) is through p-well region (302,303) it is connected with P type substrate (100), STI(702,703) and heavily doped P-type region (801,802,803) certain intervals it is provided with between, its role is to, outside the carrier that the defect in shallow trench isolation region produces is isolated from PN junction (11) multiplication regions, reduce the dark counting of SPAD device；Conductive channel between heavily doped P-type region (801,802,803) and p-well region (302,303) is provided simultaneously.
9. SPAD according to claim 1, has three electrodes: anode, negative electrode and underlayer electrode in device；There are four PN junctions: heavily doped P-type region (801 along junction depth direction, 802,803) with N+ region (601,602) PN junction (12) between, N+ region (601,602) PN junction (11) and between p-well region (301), the PN junction (13) between p-well region (301) and deep N-well region (200), and the PN junction (14) between deep N-well region (200) and substrate (100)；Substrate be usually chip remainder share, normally coupled to ground；In this case, in order to make PN junction (11) reverse-biased, heavily doped P-type region (801,802,803) can collect hole simultaneously, and the method for biasing SPAD is by Substrate ground, and cathode bias voltage is VDD, anode bias voltage is-VBD, and VDD, VBDIt is respectively provided with positive polarity.
10. the SPAD according to claim 1 to 9, it is characterized in that, the reverse bias voltage of breakdown voltage it is applied more than between negative electrode and anode, PN junction (11) is made to be operated under Geiger mode angular position digitizer, other PN junctions in device are reverse-biased, to realize incident illumination is detected, reduce the dark counting that boundary defect causes simultaneously, improve the temporal resolution of device；If adding suitable reverse bias voltage between negative electrode and underlayer electrode, making the reversed bias voltage breakdown voltage more than it of PN junction (12), the detection efficient to blue light can be improved.
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| CN106441597A (en) * | 2016-09-26 | 2017-02-22 | 东南大学 | Reversed bias voltage adjusting circuit applied to array avalanche diode |
| CN106847960A (en) * | 2017-01-23 | 2017-06-13 | 重庆邮电大学 | A kind of single-photon avalanche diode and its manufacture craft based on deep N-well structure |
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